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SAMSUNG ELECTRONICS CO., LTD.

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Jongwon Lee Boun Yoon Sang Yeob Han Chae Lyoung Kim

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METHODS OF FORMING CMOS TRANSISTORS WITH HIGH CONDUCTIVITY GATE ELECTRODES

12/942,763 | U.S. Patent Application

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Location ELECTRONIC

Filed Nov. 9, 2010

Examiner VALERIE N NEWTON

Class 438

Art Group 2897

Patent No. 8,252,675

Case Type Utility - 438/592000

Status Patented Case

Child 10-2009-0121108

Last Updated: 6 months ago

Date	#	Transaction
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METHODS OF FORMING CMOS TRANSISTORS WITH HIGH CONDUCTIVITY GATE ELECTRODES

12/942,763 | U.S. Patent Application

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