507235864
`
`04/15/2022
`
`PATENT ASSIGNMENT COVER SHEET
`
`Electronic Version v1.1
`Stylesheet Version v1.2
`
`EPAS ID: PAT/7282783
`
`SUBMISSION TYPE:
`
`NEW ASSIGNMENT
`
`NATURE OF CONVEYANCE:
`
`RELEASE OF SECURITY INTEREST
`
`CONVEYING PARTY DATA
`
`CORTLAND CAPITAL MARKET SERVICES LLC
`
`RECEIVING PARTY DATA
`
`Execution Date
`
`04/01/2022
`
`[Name:____[HILCOPATENTACQUISITIONS.WO
`401 N. MICHIGAN AVE., SUITE 1630
`
`[PropertyType|SNmber
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`
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`Name:BELLSEMIGONDUGTOR.OSS
`
`
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`Name:BELLNORTHERNRESEARORUG
`
`PROPERTY NUMBERS Total: 978
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`

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`CORRESPONDENCE DATA
`
`AddressLine 2:
`
`AddressLine 4:
`
`SUITE 1630
`
`CHICAGO, ILLINOIS 60611
`
`source=Releaseof Security Interest - FULLY EXECUTED#page6.tif
`
`Fax Number:
`Correspondencewill be sent to the e-mail addressfirst; if that is unsuccessful, it will be sent
`using a fax number,if provided; if that is unsuccessful, it will be sent via US Mail.
`Phone:
`5749031499
`Email:
`jigammon@hilcoglobal.com
`Correspondent Name:
`JOSHUA GAMMON
`AddressLine 1:
`401 N. MICHIGAN AVE.
`
`|___~SS_*FisosuservesasanOatiDeclaralon@7OFR1.63),
`
`Total Attachments: 215
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`

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`
`

`

`RELEASE OF PATENT SECURITY INTEREST
`
`This RELEASE OF PATENT SECURITY INTEREST (“Release”) is made and effective as of
`April 1, 2022 and granted by CORTLAND CAPITAL MARKET SERVICES LLC(the “Collateral
`Agent”), as collateral agent (in such capacity, together with its successors and permitted assigns) for the
`secured parties under the Loan Agreement referred to below (the “Secured Parties”), in favor of HILCO
`PATENT ACQUISITION 56, LLC, a Delaware limited liability company, BELL SEMICONDUCTOR,
`LLC, a Delaware limited liability company and BELL NORTHER RESEARCH,LLC, a Delaware
`limited liability company (each a “Grantor”and collectively the “Grantors”) and their successors,
`assigns and legal representatives.
`
`Background
`
`Pursuant to the Term Loan Agreement dated as of January 24, 2018 as amended on November 17,
`2020 (the “Loan Agreement”) among Hilco Patent Acquisition 56, LLC, as borrower, Bell
`Semiconductor, LLC and Bell Northern Research, LLC, as guarantors, the Collateral Agent and the
`lenders party thereto, the Grantors executed and delivered to the Collateral Agent (i) that certain Security
`Agreement by and among the Grantors and the Collateral Agent dated as of January 24, 2018 (the
`“Master Security Agreement’) and (ii) that certain Patent Security Agreement by and among the
`Grantors and the Collateral Agent dated as of January 24, 2018 (the “Patent Security Agreement”and,
`together with the Master Security Agreement, the “Security Agreements”);
`
`Pursuantto the Security Agreements, each Grantor pledged and granted to the Collateral Agent
`for the ratable benefit of the Secured Parties a security interest in andto all of the right, title and interest
`of such Grantorin, to and under the Patent Collateral (as defined below);
`
`The Patent Security Agreement was recorded with the United States Patent and Trademark Office
`at Reel 045216, Frame 0020 on February |, 2018; and
`
`The Grantors have requested that the Collateral Agent enter into this Release in order to
`effectuate, evidence and record the release and reassignment to the Grantors of any and all right, title and
`interest the Collateral Agent and the Secured Parties may have in the Patent Collateral pursuantto the
`Security Agreements.
`
`Collateral Agent therefore agrees as follows:
`
`Release of Security Interest. Collateral Agent, on behalf of itself and the Secured Parties,
`1,
`their successors, legal representatives and assigns, hereby terminates the Patent Security Agreement and
`terminates, releases and discharges any andall security interests that it has pursuant to the Security
`Agreements in any and all right, title and interest of the Grantors, and reassigns to the Grantors any and
`all right, title and interest that it may have, in, to and under the following (collectively, the “Patent
`Collateral”):
`
`any andall patents, patent applications and other patent rights and any other
`(a)
`governmental authority-issued indicia of invention ownership, including the patents and patent
`applications listed in Schedule 1 hereto, and all reissues, divisions, continuations, continuations-
`in-part, renewals, extensions and reexaminations thereof and amendments thereto (the
`“Patents”);
`
`

`

`all rights of any kind whatsoever of such Grantor accruing under any of the
`(b)
`foregoing provided by applicable law of any jurisdiction, by internationaltreaties and
`conventions and otherwise throughout the world;
`
`any and all license and other agreements in which such Grantor has granted oris
`(c)
`granted a license or other right under any Patent;
`
`any and all royalties, fees, income, payments and other proceeds now orhereafter
`(d)
`due or payable with respect to any andall of the foregoing; and
`
`any andall claims and causesof action, with respect to any of the foregoing,
`(e)
`whether occurring before, on or after the date hereof, includingall rights to and claimsfor
`damages, restitution and injunctive and other legal and equitable relief for past, present and future
`infringement, misappropriation, violation, misuse, breach or default, with the right but no
`obligation to sue for such legal and equitable relief and to collect, or otherwise recover, any such
`damages.
`
`Further Assurances. Collateral Agent agrees to take all further actions, and provide to the
`2,
`Grantors and their successors, assigns and legal representatives all such cooperation andassistance,
`including, without limitation, the execution and delivery of any andall further documents or other
`instruments, as the Grantors and their successors, assigns and legal representatives may reasonably
`request in order to confirm, effectuate or record this Release.
`
`Governing Law. This Release and any claim, controversy, dispute or cause of action
`3,
`(whetherin contract or tort or otherwise) based upon,arising out of or relating to this Release and the
`transactions contemplated hereby shall be governed by, and construed in accordance with, the laws of the
`United States and the State of New York, without giving effect to any choice or conflict of law provision
`or rule (whether of the State of New York or any other jurisdiction).
`
`[SIGNATURE PAGE FOLLOWS]
`
`

`

`Collateral Agent has caused this Release to be duly executed and delivered by its officer duly
`authorized as of the date stated in the first paragraph above.
`
`CORTLAND CAPITAL MARKET SERVICES
`LLC,
`
`as Collateral Agent Title: Head of? baal, Noah America
`
`ACKNOWLEDGED AND
`AGREEDasofthe date stated in
`the first paragraph above:
`
`HILCO PATENT ACQUISITION
`56, LLC, as Grantor
`
`By: sea
`
`Name: Michael Friedman
`Title: CEO
`
`BELL SEMICONDUCTOR, LLC,
`as Grantor
`
`By:
`
`
`
`ue etn.
`Narie Jobn Veschi
`Titles CEO
`
`BELL NORTHERN RESEARCH,
`LLC, as Grantor
`
` Narmie:" Afzal Dean
`
`Title: CEO
`
`

`

`SCHEDULE1
`TO
`RELEASE OF PATENT SECURITY INTEREST
`[SEE ATTACHED.]
`
`

`

`
`
`lines
`
`
`
`
`
`
`
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`
`08879100ExpiredUnitedStatesofAmerica08566161Abandoned|UnitedStatesofAmericaExpiredUnited08823829StatesofAmerica 09790821GrantedUnitedStatesofAmerica09081403UnitedStatesofAmerica09583297Abandoned|UnitedStatesofAmerica09022588GrantedUnitedStatesofAmerica08957692UnitedStatesofAmerica09363084Abandoned|UnitedStatesofAmerica091982082001-05-29|ExpiredUnitedStatesofAmerica089249021999-07-20UnitedStatesofAmerica08678718ExpiredUnitedStatesofAmerica 0910554659737671998-06-26StatesofAmerica 092163951998-12-18Abandoned|UnitedStatesofAmerica0893968958881201997-09-29|1999-03-30Expired=|UnedStatesofAmerica|1999-10-26ewored|United
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`08374193Expired
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`64860562001-02-22|2002-11-26
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`betweenatleastlocalinterconnectlevelandfirstmetalinterconnectlevel
`
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`Useofcorrosioninhibitingcompoundsinpost-etchcleaningprocessesof
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`ConsistentalignmentmarkprofilesonsemiconductorwafersusingPVD
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`ConsistentalignmentmarkprofilesonsemiconductorwafersusingPVD
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`Off-AxisIlluminatorLensMaskForPhotolithographicProjectionSystem
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`Polymericlayershavingimproveddielectriclowdielectricconstantsand
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`UseOfCorrosionInhibitingCompoundsInPost-EtchCleaningProcesses
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`NitrogenImplantedPolysiliconGateForMosfetGateOxideHardening
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`Processforselectivedepositionofpolysiliconoversinglecrystalsilicon
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`Off-axisilluminatorlensmaskforphotolithographicprojectionsystem
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`ProductResultingFromSelectiveDepositionOfPolysiliconOverSingle
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`NitrogenimplantedpolysilicongateforMOSFETgateoxidehardening
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`interconnectlevelandfirstmetalinterconnectlevel,andprocessfor
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`Integratedcircuitstructurewiththindielectricbetweenatleastlocal
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`Productresultingfromselectivedepositionofpolysiliconoversingle
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`Rapidthermalprocessingusinganarrowbandinfraredsourceand
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`Processformakingintegratedcircuitstructurewiththindielectric
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`MethodandApparatusforChemicalMechanicalPolishing
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`Methodandapparatusforchemicalmechanicalpolishing
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`Methodofformingalayerandsemiconductorsubstrate
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`ScheduleB(1)(a)—SemicProcessingA
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`Laserfaultcorrectionofsemiconductordevices
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`62394911998-05-18|2001-05-29
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`oases1998-11-23
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`59267201997-09-08
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`Expired
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`Expired
`
`UnitedStatesofAmerica
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`substrateandresultingproduct
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`makingsame
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`anintegratedcircuit
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`OfAnIntegratedCircuit
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`shadowing
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`shadowing
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`feedback
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`Apparatusforrapidthermalprocessingofawafer
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`adhesiontometal
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`CrystalSiliconSubstrate
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`crystalsiliconsubstrate
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`Laserfaultcorrectionofsemiconductordevices
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`trench
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`09188929—1998-11-09|Abandoned|UnitedStatesofAmericaExpired0872314059557621996-10-01|1999-09-21[UnitedStatesofAmerica0859502158698691996-01-31StatesofAmerica0893682959703211997-09-251999-10-19|ExpiredUnitedStatesofAmerica 0953465262582052000-03-24|2001-07-10|GrantedUnitedStatesofAmerica0910933160718181998-06-30StatesofAmerica0924432761540391999-02-03|2000-11-28Expired[UnitedStatesofAmericaExpired0870147659053811996-08-22|1999-05-18[UnitedStatesofAmerica0959447863006632000-06-15|2001-10-09expreslunesStatesofAmerica0879124461177361997-01-30{2000-09-12cipceaUnitedStatesofAmerica|Expired0884194759900101997-04-08|1999-11-23[UnitedStatesofAmerica0936264862737981999-07-27|2001-08-14Expired[UnitedStatesofAmerica0961821164559342000-07-10|2002-09-24ewes|UnitedStatesofAmerica|2000-06-06cranes|United|1999-02-09ciprea|United
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`0887380958952611997-06-12|1999-04-20|Expired
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`0855246156704251995-11-09|1997-09-23|Expired
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`0869059258775301996-07-31|1999-03-02|Expired
`0874837258438131996-11-13|1998-12-01|Expired
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`0868402257286121996-07-19|1998-03-17|Expired
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`UnitedStatesofAmerica
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`UnitedStatesofAmerica
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`circuitstructureusingare-entrantgateelectrodeandahigherdosedrain
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`protectioninintegratedcircuitstructureswithoutextraimplantandmask
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`\/OdriverdesignforsimultaneousswitchingnoiseminimizationandESD
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`Methodforformingminimumareastructuresforsub-micronCMOSESD
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`Formationofgradientdopedprofileregionbetweenchannelregionand
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`Insulated-gatefield-effecttransistorshavingdifferentgatecapacitances
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`Polymericdielectriclayershavinglowdielectricconstantsandimproved
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`Microelectronicdevicewiththinfilmelectrostaticdischargeprotection
`
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`heavilydopedsource/draincontactregionofMOSdeviceinintegrated
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`FormationOfGradientDopedProfileRegionBetweenChannelRegion
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`MethodoffabricatingamicroelectronicpackagehavingpolymerESD
`
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`IntegratedCircuitStructureUsingARe-EntrantGateElectrodeAndA
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`Endpointdetectionmethodandapparatuswhichutilizeanendpoint
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`Endpointdetectionmethodandapparatuswhichutilizeanendpoint
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`Processformakingintegratedcircuitstructurecomprisinglocalarea
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`Processformakingintegratedcircuitstructurecomprisinglocalarea
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`AndHeavilyDopedSource/DrainContactRegionOfMOSDeviceIn
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`Methodoffabricatinginsulated-gatefield-effecttransistorshaving
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`Pre-conditioningpolishingpadsforchemical-mechanicalpolishing
`
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`Pre-conditioningpolishingpadsforchemical-mechanicalpolishing
`interconnectsformedoversemiconductorsubstratebyselective
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`interconnectsformedoversemiconductorsubstratebyselective
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`depositiononseedlayerinpatternedtrench
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`depositiononseedlayerinpatterned
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`ScheduleB(1)(a)—SemicProcessingA
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`adhesiontometallines
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`differentgatecapacitances
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`FunctionalOBICanalysis
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`UnitedStatesofAmerica
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`implantation
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`HigherDoseDrainImplantation
`
`UnitedStatesofAmerica
`
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`performanceenhancement
`
`UnitedStatesofAmerica
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`steps,andarticlesformedthereby
`
`structure
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`protection
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`MicroelectronicpackagewithpolymerESDprotection
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`polishinglayerofcatalystmaterial
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`polishinglayerofcatalystmaterial
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`FunctionalOBICanalysis
`
`

`

`DamageinaRFAher
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`160578890}2004-06-10|Abandoned|UnitedStatesofAmerica
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`|LapsedUnited|2006-01-03StatesofAmerica 08454542UnitedStatesofAmerica 0871885258277771996-09-24|1998-10-27ewes|UnitedStatesofAmericascans|2003-04-18
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`603844991900-01-01Abandoned|UnitedStatesofAmerica
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`1019577566732002002-07-12StatesofAmerica1002530467133862001-12-19StatesofAmerica1075034869696832003-12-31StatesofAmerica 1032728368671272002-12-19StatesofAmerica1101646869987162004-12-16StatesofAmerica1003950868413082001-11-09|2005-01-11StatesofAmerica1097289870672232004-10-25[2006-06-27|Lapsed[UnitedStatesofAmerica[UnitedStatesofAmerica[UnitedStatesofAmerica1106338472016332005-02-22|2007-04-10StatesofAmerica11098290hizasie__froos.oaoe|aoosso-lapses|UnitedGranted|United11158450|d2005-06-21|[Abandoned11381409|«2006-05-03|==[AbandonedLapsed=|United|2006-02-14cranee|United|2005-03-15cranee|United|2005-11-29cranee|United|2004-03-30cramee|United|2004-01-06cramee|United StatesofAmerica 129127912011-09-13|GrantedUnitedStatesofAmerica112865582010-12-07|GrantedUnitedStatesofAmerica
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` eames|2005-11-23rors|2010-10-27
`
`56441431995-05-30
`
`1997-07-01|Expired
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
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`
`Methodofreducingprocessplasmadamageusingopticalspectroscopy
`
`
`Methodforprotectingasemiconductordevicewithasuperconductive
`
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`lonrecoilimplantationandenhancedcarriermobilityinCMOSdevice
`
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`lonrecoilimplantationandenhancedcarriermobilityinCMOSdevice
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`EFFICIENTPOWERMANAGEMENTMETHODININTEGRATEDCIRCUIT
`
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`Methodofpreventingresistpoisoningindualdamascenestructures
`
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`Methodofpreventingresistpoisoningindualdamascenestructures
`
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`Methodofmakingabarriermetaltechnologyfortungstenplug
`
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`CONFIGURABLEPOWERSEGMENTATIONUSINGANANOTUBE
`
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`Diamondmetal-filledpatternsachievinglowparasiticcoupling
`
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`Diamondmetal-filledpatternsachievinglowparasiticcoupling
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
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`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
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`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
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`Barriermetaltechnologyfortungstenpluginterconnection
`
`ImpactofFSpeciesonPlasmaCharge
`
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`VortexPhaseShiftMaskAppliedtoOpticalDirectWrite
`
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`UseOfReticleStitchingToProvideDesignFlexibility
`
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`Useofreticlestitchingtoprovidedesignflexibility
`
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`Techniquesformingsuperconductiveforlines
`
`
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`10418375
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`THROUGHANANOTUBESTRUCTURE
`
`line
`
`STRUCTURE
`
`interconnection
`
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`AdjustableTransmissionPhaseShiftMask
`
`SystemsandMethodsForWaferPolishing
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`Systemsandmethodsforwaferpolishing
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`Adjustabletransmissionphaseshiftmask
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`Adjustabletransmissionphaseshiftmask
`
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`Processindependentalignmentmarks
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`capacitance
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`capacitance
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`Processindependentalignmentmarks
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`

`

`08620964
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`08347527
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`09050711
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`08562235
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`09339306
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`09085913
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`10614307
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`64954071998-09-18
`
`
`2002-12-17|Granted
`
`
`
`
`
`BasedSemiconductorBody
`
`
`
`73848012007-06-11
`
`
`
`59628831998-06-08
`
`AndMethodOfMakingTheArticle
`
`
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`
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`IntegratedCircuitswithTub-Ties
`
`
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`Emitter-BaseJunction
`
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`
`
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`Reverse\(miBiasedEmitter\(miBaseJunction
`
`
`
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`StructureFormedThereby
`
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`ProtrudingSpacersForSelf-AlignedContacts
`
`Circuit
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`090935571999-10-05|ExpiredUnitedStatesofAmerica09156719UnitedStatesofAmerica 0933814362557141999-06-22StatesofAmerica0988678066494222001-06-21StatesofAmerica 0916406966140971998-09-30StatesofAmerica 0995117865253582001-09-13|2003-02-25cranee|UnitedStatesofAmerica|2003-09-02apse|United|2003-11-18cranee|United|2001-07-03cranee|United
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`57633141996-03-22|1998-06-09|Expired[UnitedStatesofAmerica64450431994-11-30StatesofAmerica59491281998-03-30StatesofAmerica57733381995-11-21StatesofAmerica60543421999-06-23|2000-04-25|Granted[UnitedStatesofAmerica59491121998-05-28|1999-09-07|Granted[UnitedStatesofAmerica72534972003-07-02|2007-08-07|GrantedUnitedStatesofAmerica118115192008-06-10|GrantedUnitedStatesofAmerica 1154286473327752006-10-04|2008-02-19Granted[UnitedStatesofAmerica1023435471261982002-09-03|2006-10-24Lapsed[UnitedStatesofAmerica 1169402174560612007-03-30|2008-11-25StatesofAmerica[UnitedStatesofAmerica1045907268061622003-06-11StatesofAmerica 1068050369728402003-10-06|2005-12-06lapsed|UnitedStatesofAmerica|2004-10-19apse|United12256677|«2008-10-23|ss[AbandonedGranted|United|1998-06-30ciprea|United|1999-09-07ciprea|United|2002-09-03cranee|United
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