Miltiadis K. Hatalis, Ph.D.
`
`Professional Summary
`
`Miltiadis (Miltos) Hatalis is a Professor in the Department of Electrical and Computer
`Engineering at Lehigh University. He received his B.S. degree in Physics from Aristotle
`University, Greece in 1982, the M.S. degree in Electrical Engineering from SUNY Buffalo in
`1984, and the Ph.D. degree in Electrical Engineering from Carnegie Mellon University in 1987.
`He is teaching courses on semiconductor devices, electronic circuits, VLSI, computer
`engineering and photovoltaic energy systems. His research interests are on electronic materials,
`devices and circuits for VLSI, flat panel displays, sensors, and integrated microsystems on a
`variety of rigid or flexible substrates including silicon, glass, metal foils, plastic, and paper. At
`Lehigh University, Prof Hatalis established a clean room facility for 150 mm substrates
`dedicated to the fabrication of ICs, sensors and flat panel displays and served as its Director for
`25 years. Prof. Hatalis has received $13.6 million of research funding and has been the Principal
`or Co-Principal Investigator of 41 research programs. Some of his group notable system
`demonstrations include flexible integrated circuits on metal foils, a 3” flexible VGA AMOLED
`display, and large area sensor arrays for biometric and gas sensing applications. Prof. Hatalis has
`served as a consultant to several companies in the flat panel display and semiconductor field and
`as an expert on 15 patent litigation cases including a testifying witness in an ITC case. As an
`expert prepared 28 expert reports (15 of them in support of IPRs) and was deposed for 20 of
`these reports. He is the author or co-author of 180 technical publications including three issued
`patents, and two book chapters one on AMOLED pixel electronic circuits and one on polysilicon
`TFT technology. Prof. Hatalis has served as the PhD advisor of 20 completed PhD dissertations.
`
`Expertise
`
`▪ Electronic Materials & Micro/Nano
`Electronic Fabrication Processes
`
`▪
`
`▪
`
`Flat Panel Displays (TFT-LCDs,
`AMOLEDs)
`
`Flexible Displays & Flexible Electronics
`
`▪ Micro/Nano Electronic Devices &
`Integrated Circuits
`
`▪
`
`Sensor and Transducer Arrays
`
`▪ Thin Film Transistor Technologies
`▪ VLSI
`
`Education
`
`Doctor of Philosophy (Ph.D.)
`
`Master of Science (M.S.)
`
`Bachelor of Science (B.S.)
`
`1987
`Electrical and Computer Engineering,
`Carnegie Mellon University, Pittsburgh, PA USA
`
`1984
`Electrical and Computer Engineering,
`State University of New York at Buffalo, NY, USA
`
`Physics
`Aristotle University of Thessaloniki, Greece
`
`1982
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 001
`
`

`

`M. K. Hatalis, Ph.D.
`
`Professional Experience
`
`Academia
`
`1995-today
`
`Professor
`
`2003-2008
`
`Professor
`
`1991-1995 Associate Professor
`
`1987-1991 Assistant Professor
`
`Lehigh University, Bethlehem, PA
`Department Electrical & Computer Engineering
`
`Aristotle University, Greece
`Department of Computer Science
`
`Lehigh University, Bethlehem, PA
`Department Electrical & Computer Engineering
`
`Lehigh University, Bethlehem, PA
`Department Electrical & Computer Engineering
`
`1993-today
`
`Director
`
`Display Research Laboratory
`Lehigh University
`
`2010-2013
`
`Interim Director
`
`Sherman Fairchild Center for Solid State Studies
`Lehigh University
`
`1988-1993 Associate Director
`
`Microelectronics Research Laboratory
`Lehigh University
`
`Industry
`1987-2015
`
`Independent Consultant
`
`▪
`
`▪
`
`▪
`
`▪
`
`▪
`
`▪
`
`Air Products
`
`Alcoa
`
`Corning
`
`Diamonex
`
`Dow Corning
`
`eMagin
`
`▪
`
`▪
`
`▪
`
`▪
`
`▪
`
`IBM
`
`Intevac
`
`Kodak
`
`Litton Systems Canada
`
`Motorola Solutions
`
`▪ Next Biometrics
`
`▪
`
`▪
`
`▪
`
`Sharp Labs of America
`
`Spire
`
`Sterling Diagnostics
`
`▪ Versatilis
`
`1992
`
` Visiting Scientist
`
`XEROX Palo Alto Research Laboratory
`
`Courses Taught
`
`Principles of Electrical Engineering
`
`Physics of Semiconductor Devices
`
`Microelectronics Technology
`
`Photovoltaic Energy Systems
`
`▪
`
`▪
`
`▪
`
`▪
`
`Electronic Circuits
`
`Introduction to VLSI Circuits
`
`VLSI Design
`
`Introduction to Computer Engineering
`
`Page 2 of 23 Pages
`
` ▪
`
`▪
`
`▪
`
`▪
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 002
`
`

`

`M. K. Hatalis, Ph.D.
`
`
`Expert Engagements for Patent Litigation Cases
`
`Total Court Appearances:
`
` 1 (testified at an International Trade Commission (ITC) trial)
`
`Total Expert Reports:
`
`
`
`IPR related Reports:
`
`Total Reports Deposed:
`
`28
`
`15
`
`20
`
`16)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`15)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`14)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`13)
`Law Firm:
`Case Name:
`
`Services Provided:
`
`Disposition:
`Date:
`
`12)
`Law Firm:
`Case Name:
`
`Services Provided:
`
`Disposition:
`
`Date:
`
`Latham & Watkins, LLP
`Solas OLED Ltd. v. LG Display Co. Ltd., CASE NO. 6:19-cv-236-ADA
`Engaged as Expert for LG Display.
`Case on-going
`2019 - present
`
`Bragalone Conroy, PC
`Vista Peak Ventures v. AU Optronics Corp., C.A. No. 2:18-cv-00276 (E.D. Tex.)
`Engaged as Expert for Vista Peak. Prepared an expert report for claim construction.
`Case settled
`2019
`
`O’Melveny & Meyers, LLP
`MediaTek Inc. v. Advanced Micro Devices, Inc., C.A. No. 19-368-CFC (D. Del.)
`Engaged as Expert for AMD. Search and analysis of relevant prior-art.
`Case settled
`2019
`
`O’Melveny & Meyers, LLP
`Tessera v. Samsung Electronics, et al. ITC No. 337-3262
`Invensas v. Samsung Electronics, et al. Civil Action No. 2:17-cv-670
`Engaged as Expert for Samsung. Prepared six expert reports and deposed for one
`report, in support of requests to USPTO for Inter Parties Review of five patents.
`Case settled prior to USPTO making a decision
`2017 – 2018
`
`Covington & Burling, LLP
`MiiCs & Partners America, et al. v. Toshiba, et al. Samsung Electronics Co., (Civil
`Action No. 1:14-cv-00803-RGA),
`MiiCs & Partners America, et al. v. Funai, et al. Samsung Electronics Co., (Civil
`Action No. 1:14-cv-00804-RGA)
`Engaged as Expert for Samsung on three patents. Prepared three Invalidity, three
`Rebuttal (Non-infringement) and three Reply Expert Reports. Also developed non-
`infringing alternatives that resulted in low damages. I was deposed for all reports.
`Judge ruled in favor of defendant’s MSJ on non-infringement for two of the patents.
`Plaintiffs agreed to dismiss the case for the third patent.
`2016 - 2017
`
`Page 3 of 23 Pages
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 003
`
`

`

`11)
`Law Firm:
`Case Name:
`
`Services Provided:
`
`Disposition:
`Date:
`
`10)
`Law Firm:
`Case Name:
`
`Services Provided:
`Disposition:
`Date:
`
`9)
`Law Firm:
`Case Name:
`
`Services Provided:
`
`Disposition:
`Date:
`
`8)
`Law Firm:
`Case Name:
`Services Provided:
`
`Disposition:
`Date:
`
`7)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`6)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`M. K. Hatalis, Ph.D.
`
`Hogan Lovells, LLP
`Round Rock Research LLC v. Ricoh Corporation, (Civil Action No. 1:15-CV-
`00157-SLR)
`Engaged as Expert for Ricoh. Prepared two expert reports in support of requests to
`USPTO for Inter Parties Review of two patents.
`Case settled prior to USPTO making a decision.
`2016
`
`O’Melveny & Meyers, LLP
`Samsung Electronics Co. LTD., et. al. v. NVIDIA Corporation, (Civil Action
`No. 3:14-CV-00757)
`Engaged as Expert for Samsung
`Undisclosed
`2014 – 2015
`
`Covington & Burling, LLP
`The Penn State Research Foundation v. Samsung, (Civil Action No. 4:14-CV-
`00124-MWB (M.D.Pa)
`Engaged as Expert for Samsung on one patent. Performed invalidity analysis and
`provided non-infringement contentions.
`Complainant withdrew the complaint.
`2014
`
`Jeffer Mangels Butler & Mitchell, LLP
`SEL v. Innolux
`Engaged as Expert for Innolux on five patents. Prepared seven expert reports in
`support of requests to USPTO for Inter Partes Review of five different patents;
`all IPRs were instituted. I was deposed separately for each of these seven reports.
`Case settled prior to USPTO making a final decision.
`2012 – 2013
`
`Cozen O’ Connor, LLP
`EIDOS v. AUO, et. al., Civil Action No. 6:11-CV-201-LED-JDL
`Engaged as Expert for Innolux
`Undisclosed
`2013
`
`O’Melveny & Meyers, LLP
`AUO v. Samsung, (Civil Action No. 3:09-CV-00001-BBC)
`Engaged as Expert for Samsung
`Undisclosed
`2011
`
`Page 4 of 23 Pages
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 004
`
`

`

`5)
`Law Firm:
`Case Name:
`
`Services Provided:
`
`Disposition:
`Date:
`
`4)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`3)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`2)
`Law Firm:
`Case Name:
`Services Provided:
`
`Disposition:
`Date:
`
`1)
`Law Firm:
`Case Name:
`Services Provided:
`Disposition:
`Date:
`
`M. K. Hatalis, Ph.D.
`
`White & Case, LLP
`Thomson v. CMI, (Investigation No. 337-TA-741 and Investigation No.
`337-TA-749)
`Engaged as Expert for CMI. Prepared one invalidity and one non- infringement
`expert reports. I was deposed for these reports. I testified in the ITC trial.
`ITC ruling was favorable to CMI and it was affirmed by US Court of Appeals.
`2011
`
`O’Melveny & Meyers, LLP
`SEL v. Samsung, (Civil Action No. 3:09-CV-00001-BBC)
`Engaged as Expert for Samsung
`Undisclosed
`2009
`
`Irell & Manella, LLP
`LG v. CMO, (Civil Actions No.06-726 (JJF) & 07-357 (JJF)
`Engaged as Expert for CMO
`Undisclosed
`2008
`
`Howrey, LLP
`SEL v. CMO, (Case No. C 04-04675 MH)
`Engaged as Expert for CMO. I prepared a non-infringement expert report. I was
`deposed for that report
`Judge ruled in favor of defendant’s MSJ on non-infringement.
`2007
`
`Morrison & Foerster
`SEL v. Sanyo
`Engaged as Expert for Sanyo
`Undisclosed
`2001
`
`Page 5 of 23 Pages
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 005
`
`

`

`M. K. Hatalis, Ph.D.
`
`Professional Affiliations and Involvement in Professional Societies
`
`Affiliations:
`
`IEEE Electron Device Society, Society for Information Display (SID)
`
`Editorships:
`
`▪
`
`▪
`
`“Flat Panel Display Materials II,” Materials Research Society Symposium Proceedings vol. 424,
`Published by the Materials Research Society, 1997.
`
`“Proceedings of the Second International Workshop on Active Matrix Liquid Crystal Displays,”
`Published by the IEEE Society, 1996
`
`Chairman of the organization committee for the following workshops/conferences:
`
`▪
`
`▪
`
`International Workshop on Active Matrix Displays
`o It was sponsored by the Society of Information Display in co-operation with IEEE Electron
`Devices Society. It was held during the International Display Research Conference in Toronto,
`Canada, on September 20-23, 1997. There were 9 invited papers and 120 attendees.
`Flat Panel Display Materials II
`o Meeting held during Spring1996 Meeting of the Materials Research Society. During the three day
`Symposium a total of 118 papers were presented. Prof. Hatalis was responsible for selecting the
`co-organizers, raising financial support, prepare the technical program and edit Symposium
`Proceedings.
`Second International Workshop on Active Matrix Liquid Crystal Displays
`o It was organized in co-operation with Society for Information Displays and the IEEE Electron
`Devices Society. It was held at Lehigh University on September 25-26, 1995. There were 11
`invited and 25 contributed papers and 130 attendees.
`First International Workshop on Active Matrix Liquid Crystal Displays
`o Workshop sponsored by the Society of Information Display in co-operation with IEEE Electron
`Devices Society. It was held during the International Display Research Conference in Monterey
`CA, on October 10-13, 1994. There were 10 invited and 22 contributed papers and 170 attendees.
`▪ Active Matrix Liquid Crystal Displays Symposium
`o It was organized in co-operation with Society for Information Display and IEEE Electron Devices
`Society. It was held at Lehigh University, on October 21-22, 1993. Seven invited and 35
`contributed papers were presented. Attendance was 160.
`
`▪
`
`▪
`
`Member of the organization committee for the following workshops/conferences:
`
`▪
`
`▪
`
`▪ Active Matrix Liquid Crystal Displays Technology and Applications
`o Sponsored by the International Society for Optical Engineering (SPIE). USA, 1997
`Sixth International Conference on Polycrystalline Semiconductors
`o Conference was held in FRANCE, 2000
`Flat Panel Display Technology II
`o Sponsored by the International Society for Optical Engineering (SPIE). USA, 2001
`▪ EURO-CVD Conference
`o Sponsored by the European Materials Research Society GREECE, 2001
`International Workshop on Active Matrix Liquid Crystal Displays
`o Sponsored by the Japan Society of Applied Physics, JAPAN: 1999, 2000, 2001, 2002, 2003,
`2004, 2005, 2006
`IEEE Photonics Conference 2013
`o Member of the committee for Displays and Lighting Sessions
`
`▪
`
`▪
`
`Page 6 of 23 Pages
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 006
`
`

`

`M. K. Hatalis, Ph.D.
`
`o
`
`Patents & Publications
`
`Total Citations
`
`4,061 as of 11/21/2019 according to Google Scholar, H-index of 27
`
`Patent
`
`Date
`
`Description
`
`US Patent 8,390,536
`
`March 5, 2013
`
`Active Matrix Display and Method
`
`Korean Patent
`No. 10-2009-7014517
`
`November 2014
`
`Active Matrix Display and Method
`
`Japanese Patent 6043044
`
`November 18, 2016
`
` Active Matrix Display and Method
`
`Book Chapters
`
`1. “Technology of Polysilicon Thin Film Transistors.” A. T. Voutsas and M. K. Hatalis. Chapter 4 in
`the book “Thin Film Transistors” edited by C. Kagan and P. Andy. Published by Marcel Dekker,
`Inc. 2003.
`
`2. “AMOLED Display Pixel Electronics.” M. Troccoli, M. K. Hatalis, A. T. Voutsas, Chapter 10, in
`the book “Organic Electroluminescence” edited by Z. Kafafi and H. Murata. Published by CRC
`Press & SPIE Press, 2005, p. 355.
`
`Journal Papers
`
`1. “High Performance Thin Film Transistors in Low Temperature Crystallized Amorphous Silicon
`Films” IEEE Electron Device Letters, vol. EDL-8, pp. 361-364, 1987. M. K. Hatalis and D. W.
`Greve.
`
`2. “Solid Phase Epitaxy of LPCVD Amorphous Silicon Films.” Journal of the Electrochemical Society,
`vol. 134, pp. 2536-2540, 1987. M.K. Hatalis and D.W. Greve.
`
`3. “Large Grain Polycrystalline Silicon by Low Temperature Annealing of LPCVD Amorphous Silicon
`Films.” Journal of Applied Physics, vol. 63, pp. 2260-2266, 1988. M.K. Hatalis and D.W. Greve.
`
`4. “Interfacial Oxide, Grain Size and Hydrogen Passivation Effects on Polysilicon Emitter Transistors,”
`IEEE Transactions on Electron Devices, vol. ED-35, pp. 1334-1343, 1988. P.A. Potyraj, D.L. Chen,
`M.K. Hatalis, and D.W. Greve.
`
`5. “Minimum Detectable Solute Concentration by Atomic - Resolution TEM.” Acta Crystallographica
`A, vol. A44, pp. 449-461, 1988. J.M. Howe, D.P. Basile, N. Prabhu, and M.K. Hatalis.
`
`6. “Low Temperature Polycrystalline Silicon Thin Film Transistors for Displays” IEEE Transactions on
`Electron Devices, vol. ED-35, pp. 1842-1845, 1988. B.C. Hseih, M.K. Hatalis and D.W. Greve.
`
`7. “Alternate Surface Cleaning Approaches for UHV/CVD Epitaxy of Si and GexSi1- x.” Journal of the
`Electrochemical Society, vol. 138, pp. 3783-3789, 1991. M. Racanelli, D.W. Greve, M. K. Hatalis
`and L. J. van IJzendroorn.
`
`8. “Investigations on Quality of Polysilicon Film-Gate Dielectric Interface in Polysilicon Thin Film
`Transistors.” Thin Solid Films, vol. 216, pp. 137-141, 1992. J.-H. Kung, M. K. Hatalis and J. Kanicki.
`
`9. “Flourine-Enhanced Oxidation of Polycrystalline Silicon and Application to Thin Film Transistor
`Fabrication” Applied Physics Letters, vol. 61, pp. 937-939, 1992. D. N. Kouvatsos, M. K. Hatalis and
`R. J. Jaccodine.
`
`Page 7 of 23 Pages
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 007
`
`

`

`M. K. Hatalis, Ph.D.
`
`10. “Structure of as-Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures.”
`Journal of the Electrochemical Society, vol. 139, pp. 2659-2665, 1992. A. T. Voutsas and M. K.
`Hatalis.
`
`11. “Surface Treatment Effect on the Grain Size and Surface Roughness of as Deposited LPCVD Silicon
`Films.” Journal of the Electrochemical Society, vol.140, pp. 282-288, 1993. A. T. Voutsas and M. K.
`Hatalis.
`
`12. “Deposition and Crystallization of a-Si Low Pressure Chemically Vapor Deposited Films Obtained
`by Low-Temperature Pyrolysis of Disilane.” Journal of the Electrochemical Society, vol. 140, pp.
`871-877, 1993. A. T. Voutsas and M. K. Hatalis.
`
`13. “Crystallized Mixed-Phase Silicon Films for Thin Film Transistors on Glass Substrates.” Applied
`Physics Letters, vol. 63, pp. 1546-1548, 1993. A.T. Voutsas and M.K. Hatalis.
`
`14. “Properties of the Cadmium Selenide Thin Films as a Function of Lateral Distance from Chromium
`Contacts,” Journal of the Electrochemical Society, vol. 140, pp. 2994-2998, 1993. D. Waechter, M. R.
`Westcott, F. Lin, and M. K. Hatalis.
`
`15. “Structural Characteristics of as-Deposited and Crystallized Mixed-Phase Silicon Films.” Journal of
`Electronic Materials, vol. 23, pp. 319-330, 1994. A. T. Voutsas and M. K. Hatalis.
`
`16. “Experimental and Theoretical Study on the Crystallization of Chemically Vapor Deposited Mixed-
`Phase Silicon Films,” Journal of Applied Physics, vol. 76, pp. 777-790, 1994. A. T. Voutsas and M.
`K. Hatalis.
`
`17. “Characterization of Cobalt Annealed on Silicon-Germanium Epilayers.” Thin Solid Films, vol. 250,
`pp. 20-25, 1994. F. Lin, G. Sarcona, M. K. Hatalis, A. Cherhati, E. Austin and D. W. Greve.
`
`18. “Raman Spectroscopy of Amorphous and Microcrystalline Silicon Films Deposited by Low Pressure
`Chemical Vapor Deposition” Journal of Applied Physics, vol. 78, pp. 6999 - 7005, 1995. A. T.
`Voutsas, M. K. Hatalis, J. Boyce and A. Chiang.
`
`19. “High performance thin film transistors in large grain size polysilicon deposited by thermal
`decomposition of disilane,”IEEE Transactions on Electron Devices, vol. 43, pp. 1399 - 1406, 1996.
`D. N. Kouvatsos, A. T. Voutsas, and M. K. Hatalis.
`
`20. “Leakage current mechanism in submicron polysilicon thin film transistors”IEEE Transactions on
`Electron Devices, vol. 43, pp. 1218 - 1223, 1996. K. Olasupo and M. K. Hatalis.
`
`21. “The effect of drain offset on current-voltage characteristics in sub-micron polysilicon thin film
`transistors,” IEEE Transactions Electron Devices, vol. 43, pp. 1306-1308, 1996. K. Olasupo, W.
`Yarbrough and M. K. Hatalis.
`
`22. “Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates”
`Electronics Letters, vol. 32, pp. 775 - 777, 1996. N. Kouvatsos, D. Tsoukalas, G. T. Sarcona, M. K.
`Hatalis and J. Stoemenos.
`
`23. “Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing
`fluorinated gate oxidation.” IEEE Transactions on Electron Devices, vol. 43, pp. 1448 - 1453, 1996.
`D. N. Kouvatsos and M. K. Hatalis.
`
`24. “Nickel Silicides Grown on Amorphous Silicon and Silicon-Germanium Thin Films.”
`Electrochemical and Solid State Letters, vol. 1, p. 233-234, 1998. G. Sarcona, S. K. Saha, and M. K.
`Hatalis.
`
`25. “Non-Erratic Behavior of Overerased Bits in Flash EEPROM” Journal of Vacuum Science and
`Technology B, vol. 16, p 3065-3068, 1998. F. Nkansah, E. Prinz, and M. K. Hatalis.
`
`26. “Thin Film Transistors in Low Temperature As-deposited and Reduced Crystallization-Time
`Polysilicon on 665 C Strain Point Glass Substrates.” Thin Solid Films, vol. 338, pp. 281-285, 1999.
`M. K. Hatalis, D. N. Kouvatsos, J. H. Kung, A. T. Voutsas, and J. Kanicki.
`
`Page 8 of 23 Pages
`
`LG Display Co., Ltd.
`Exhibit 1004
`Page 008
`
`

`

`M. K. Hatalis, Ph.D.
`
`27. “Silicidation Reactions with Co – Ni Bilayers for Low Thermal Budget Microelectronic
`Applications.” Thin Solid Films, vol. 347, pp. 278-283, 1999. S. K. Saha, R. S. Howell, and M. K.
`Hatalis.
`
`28. “Effect of Flash EEPROM Floating Gate Morphology on Electrical Behavior of Fast Programming
`Bits.” IEEE Transaction on Electron Devices, vol. 46, pp. 1355- 1362, 1999. F. Nkansah and M. K.
`Hatalis.
`
`29. “Polysilicon Thin Film Transistors using Self-Aligned Cobalt and Nickel Silicide Source and Drain
`contacts”IEEE Electron Device Letters, vol. 20, pp. 332-334, 1999. G. Sarcona, M. Stewart, and M.
`K. Hatalis.
`
`30. “Elimination of Hillock Formation in Al Interconnects Using Ni or Co” Journal of Applied Physics,
`vol. 86, pp. 625-633, 1999. S. K. Saha, R. S. Howell, and M. K. Hatalis.
`
`31. “Reaction Mechanisms in Al-ITO Ohmic Contact Metallization with Co and Ni Barrier Layers for
`Active Matrix Display Applications.” Journal of Electrochemical Society, vol. 146, pp. 3134-3138,
`1999. S. K. Saha, R. S. Howell, and M. K. Hatalis.
`
`32. “Polycrystalline Silicon Thin Film Transistors in Various Solid Phase Crystallized Films Deposited
`on Glass Substrates”Journal of Electronic Materials, vol. 28, pp. 19-25, 1999. D. N. Kouvatsos, A. T.
`Voutsas, and M. K. Hatalis.
`
`33. “Preparation and Stability of Low Temperature Cobalt and Nickel Silicides on Thin Polysilicon
`Films.” Journal of Vacuum Science and Technology A, vol. 18, pp. 97- 93, 2000. R. S. Howell, G.
`Sarcona, and M. K. Hatalis.
`
`34. “Poly-Si Thin Film Transistors on Steel Substrates” IEEE Electron Device Letters, vol. 21, pp. 70-72,
`2000. R. S. Howell, M. Stewart, S. V. Karnik, S. K. Saha, and M. K. Hatalis.
`
`35. “High Performance Gated Lateral Polysilicon PIN Diodes,” Solid State Electronics, vol. 44, pp.1613-
`1619, 2000. M. Stewart and M. K. Hatalis.
`
`36. “Characterization and Modeling of Fast Programming Bits in Flash EEPROM” Solid State
`Electronics, vol. 44, pp. 1887-1897, 2000. F. Nkansah, M. K. Hatalis and K. Olasupo.
`
`37. “Polysilicon TFT Technology for Active Matrix OLED Display,” IEEE Transaction on Electron
`Devices, vol. 48, pp. 845-851, 2001. M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis.
`
`38. “Novel Cleaning Methodology for Steel Substrates in Microelectronic Fabrication.” Journal of
`Electrochemical Society, vol. 149, pp. G143-G146, 2002. R. S. Howell and M. K. Hatalis.
`
`39. “Trade Off Between Polysilicon Film Quality and Thin Film Transistor Operational Amplifier DC
`Gain.” Solid State Electronics, vol. 46/9, pp. 1421-1425, 2002. T. Afentakis and M. K. Hatalis.
`
`40. “A Simple Analytical Model for the Dependence of the Propagation Delay of the Polycrystalline
`Silicon CMOS Inverter on Temperature” Solid State Electronics, vol. 46/12, pp. 2301-2306, 2002 T.
`Afentakis and M. K. Hatalis.
`
`41. “Palladium based Micro-Membrane for Water Gas Shift Reaction and Hydrogen Gas Separation.” J.
`of Microelectromechanical Systems, vol. 12, pp.: 93- 100, 2003. S. V. Karnik, M. K. Hatalis, M. V.
`Kothare.
`
`42. “Implementations of Rapid Thermal Processes in Polysilicon TFT Fabrication.” Accepted for
`Publication by Elsevier for a Special Volume on Rapid Thermal Processing for Future Semiconductor
`Devices M. K. Hatalis and A. T. Voutsas.
`
`43. “Lateral Polysilicon p+-p-n+ and p+-n-n+ Diodes.” Solid State Electronics, Vol. 47, pp. 653-659,
`2003 S. V. Karnik and M. K. Hatalis.
`
`44. “Multiple Lateral Polysilicon Diodes as Temperature Sensors for Chemical Microreaction Systems,”
`Japanese Journal of Applied Physics (JJAP), vol. 42, pp.1200-1205, 2003. S.V. Karnik and M. K.
`Hatalis.
`
`Page 9 of 23 Pages
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`

`M. K. Hatalis, Ph.D.
`
`45. “Macroelectronics: Perspectives on Technology and Applications,” Proceedings of IEEE, vol. 93,
`pp.1239-1256, 2005. R. H. Reuss, et.al. (M. Hatalis).
`
`46. “Polysilicon TFT Circuits on Flexible Stainless Steel Foils,” Solid State Electronics, vol. 50, pp 1080-
`1087, 2006. M. Troccoli, A. J. Roudbari, T. Chuang, M. Hatalis.
`
`47. “Exciton dissociation by a static electric field followed by nanoscale charge transport in PPV polymer
`films,” Phys. Rev. B (Condensed Matter and Materials Physics), vol. 73, p. 125202, 2006. H.
`Najafov, I. Biaggio, Ta-Ko. Chuang, M. K. Hatalis.
`
`48. “Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on
`flexible steel foils” IEEE Transactions on Electron Devices, v 53, p 815-22, 2006. T. Afentakis, M.
`Hatalis, A. Voutsas and J. Hartzell.
`
`49. “Water Gas Shift Reaction in a Glass Microreactor,” Catalysis Today, vol. 120, p.107–120, 2007. S.
`Mukherjee, M. K. Hatalis, and M. V. Kothare.
`
`50. “Top-emitting 230 dots/in. Active-Matrix Polymer Light-Emitting Diode Displays on Flexible Metal
`Foil Substrates,” Applied Physics Letters 90, 151114 (2007). T.-K. Chuang, M. Troccoli, P.-C Kuo,
`A. Jamshidi, M. K. Hatalis; I. Biaggio; A. T. Voutsas.
`
`51. “Polysilicon TFT technology on Flexible Metal Foils for AM-PLED displays,” Invited paper: Journal
`of Society for Information Displays, 15, 455 (2007). T.-K. Chuang, M. Troccoli, M. K. Hatalis, and
`A. T. Voutsas.
`
`52. “Process Technology for High-Resolution AM-PLED Displays on Flexible Metal Foil Substrates,”
`Electrochemical and Solid-State Letters, 10, J92 (2007). T.-K. Chuang, M. Troccoli, P.-C Kuo, A.
`Jamshidi, M. K. Hatalis, A. T. Voutsas, and T. Afentakis.
`
`53. “Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on
`stainless steel foil.” Applied Physics Letters, 91, 243507 (2007). Po-Chin Kuo, Abbas Jamshidi-
`Roudbari and Miltiadis Hatalis.
`
`54. “High Voltage, Moderate Current Thin Film Transistor for Actuator Applications,” ECS Trans., vol.
`11, pp: 31-39, 2008. A. Jamshidi-Roudbari, P.C. Kuo, and M. Hatalis.
`
`55. “Luminescence of Intraporous Cerium(III) Complexes in Alkyl Sulfonic Mesoporous.” Chemistry of
`Materials, vol. 20, pp. 1359-1366, 2008. Klier, K., Miller, A., Zhang, L., Hatalis, M.
`
`56. “Tactile displays: Overview and recent advances.” Displays, Vol. 29, pg. 185-194, 2008. V. G.
`Chouvardas, A. N. Miliou, M. K. Hatalis.
`
`57. “Crystallization of amorphous silicon thin films: comparison between experimental and computer
`simulation results.” Journal of Materials Science, Vol. 43, pg. 3976- 3981, 2008 J. Kioseoglou, P.
`Komninou, G. P. Dimitrakopulos, I. P. Antoniades, M. K. Hatalis and T. Karakostas.
`
`58. “Effect of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators
`fabricated on stainless steel foil.” Solid-State Electronics vol. 52, pg.1594-1601, 2008. Abbas
`Jamshidi-Roudbari, Po-Chin Kuo, Miltiadis Hatalis.
`
`59. “Electronic Structure of CeF3 and TbF3 by valence-band XPS and theory.” Journal of Physics
`and Chemistry of Solids, vol. 70, pg. 1302-1311, 2009. K. Klier, P. Novak, A.C. Miller, J.A. Spirko
`and M.K. Hatalis.
`
`60. “Effects of Mechanical Strain on Characteristics of Polycrystalline Silicon Thin Film Transistors
`Fabricated on Stainless Steel Foil.” IEEE Journal of Display. Technology, vol. 5, pg. 202-205, 2009.
`Po-Chin Kuo, Abbas Jamshidi-Roudbari, and Miltiadis Hatalis.
`
`61. “Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on
`steel foil under strain” Journal of Applied Physics, vol. 106, 114502 (2009). Po-Chin Kuo, Abbas
`Jamshidi-Roudbari and Miltiadis Hatalis.
`
`62. “A Flash Analog to Digital Converter on Stainless Steel Foil” Solid-State Electronics, vol. 54,
`pg. 410-416, 2010. A. Jamshidi-Roudbari, P.C. Kuo, and M. Hatalis.
`Page 10 of 23 Pages
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`M. K. Hatalis, Ph.D.
`
`63. “High Frequency Half-Bit Shift Register with Amorphous Oxide TFT.” IEEE Electron Device
`Letters, vol. 31, pg. 320-322, 2010. A. Jamshidi-Roudbari, S. A. Khan, and M. K. Hatalis.
`
`64. “Integrated Full-Bit Shift Register by Low-Temperature Amorphous Indium Gallium Zinc Oxide
`Thin-Film Transistors.” Electrochemical and Solid State Letters, vol. 14, pg. J19-J21, 2011. Abbas
`Jamshidi-Roudbari, Shahrukh Akbar Khan, and Miltiadis K. Hatalis.
`
`65. “Voltage Noise Characteristics of Polysilicon P-I-N Diodes.” IEEE Transactions on Electron Devices,
`vol. 58, pg. 1054-1062, 2011. A. Jamshidi-Roudbari and M. K. Hatalis.
`
`66. “Amorphous oxide Thin Film Transistors with Methyl Siloxane Based Gate Dielectric on Paper
`Substrate.” Electrochemical and Solid State Letters, vol. 14, pg. H247-H249, 2011. Nackbong Choi,
`Shahrukh Khan, and Miltiadis K. Hatalis.
`
`67. “Origin of low-frequency noise in the low drain current range of bottom-gate amorphous IGZO
`thin-film transistors.” IEEE Electron Device Letters, vol. 32, pg. 898-900, 2011. C. G. Theodorou, A.
`Tsormpatzoglou, C. Dimitriadis, S. Khan, M. K. Hatalis, J. Jomaah, G. Ghibaudo.
`
`68. “A modified offset roll printing for thin film transistor applications.” Microelectronics
`Engineering, vol. 91, pp. 93-97, 2012. N. Choi, H. Wee, S. Nam, J. Lavelle, and M. K. Hatalis.
`
`69. “Interface diffusion characteristics of Al–2 at.%Nd/n + a-Si:H and Al–2 at.%Nd/n + poly-Si
`bilayers.” Thin Solid Films, vol. 520, pp. 1982-1987, 2012. Nackbong Choi, Soo-Young Yoon,
`Chang-Dong Kim, and Miltiadis Hatalis.
`
`70. “Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film
`Transistors with Low Frequency Noise Measurements.” IEEE Electron Device Letters, vol. 33, pp.
`555-557, 2012. Andreas Tsormpatzoglou, Nikolaos A. Hastas, Shahrukh Khan, Charalabos A.
`Dimitriadis, Miltiadis Hatalis.
`
`71. “Design and simulation of a tactile display based on a CMUT array.” International Journal of
`Electronics, vol. 99, pp. 1351-1363, 2012. V. Chouvardas, M. Hatalis and A. N. Miliou.
`
`72. “Optimizing the design of a tactile display based on a capacitive micromachined ultrasonic transducer
`array.” International Journal of Numerical Modelling: Electronic Networks, Devices and Field, vol.
`26, pp. 448-456, 2013. V. G. Chouvardas, M. K. Hatalis and A. N. Miliou.
`
`73. “Characterization of High Current Stress Induced Instability in Amorphous InGaZnO Thin Film
`Transistors by Low Frequency Noise Measurements” IEEE Electron Device Letters, vol. 34, pp.
`1403-1405, 2013. A. Tsormpatzoglou, N. Hastas, F. Mahmoudabadi, N. Choi, M. K. Hatalis and C.
`A. Dimitriadis.
`
`74. “Analytical surface-potential-based drain current model for amorphous InGaZnO thin film
`transistors.” Journal of Applied Physics, vol. 114, 184502, 2013. A. Tsormpatzoglou, N. Hastas, N.
`Choi, F. Mahmoudabadi, M. K. Hatalis and C. A. Dimitriadis.
`
`75. “Amorphous IGZO TFTs and circuits on conformable aluminum substrates.” Solid State Electronics,
`vol. 101, p 57-62, 2014. F. Mahmoudabadi, X. Ma, M. K. Hatalis, K. Shah and T. L. Levendusky.
`
`76. “Novel analog feedback current programming architecture compatible with 2- transistor 1-capacitor
`pixel for active matrix organic light-emitting diode displays.” Journal of the Society for Information
`Display, vol. 22, p 204-215, 2014. Thomas Charisoulis, Matias N. Troccoli, Douglas R. Frey,
`Miltiadis K. Hatalis.
`77. “Current feedback compensation circuit for 2T1C LED displays: Method.” IEEE Transactions on
`Circuits and Systems I: Regular Papers, vol. 62, p 2423-2433, 2015. Thomas Charisoulis, Douglas R.
`Frey, Miltiadis K. Hatalis.
`78. “Current Feedback Compensation circuit for 2T1C LED displays: Analysis and Evaluation." IEEE
`Transactions on Circuits and Systems I: Regular Papers, vol. 66, p. 175-188, 2019. Thomas
`Charisoulis, Collin Reiman, Douglas R. Frey, Miltiadis K. Hatalis.
`
`Page 11 of 23 Pages
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`LG Display Co., Ltd.
`Exhibit 1004
`Page 011
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`

`

`M. K. Hatalis, Ph.D.
`
`Refereed Conference Papers
`
`1. “Solid Phase Epitaxy of LPCVD Silicon Films and Their Use as Diffusion Sources.” The
`Electrochemical Society Extended Abstracts, Vol. 86-1, Spring 1986. M. K. Hatalis and D. W. Greve.
`
`2. “TEM Studies of the Amorphous / Crystalline Transition in Silicon and Applications to Electronic
`Devices.” Institute Physics Conference Series, vol. 87, pp. 479-484, 1987 D.W. Greve and M. K.
`Hatalis.
`
`3. “Crystallization of Amorphous LPCVD Silicon Films and Application to Bipolar and Thin Film
`Transistors.” Materials Research Society Symposium Proceedings, vol. 106, pp. 335-340, 1987 M. K.
`Hatalis and D. W. Greve.
`
`4. “Thin Film Transistors in Low Temperature Crystallized Amorphous Silicon Films.” The
`Electrochemical Society Extended Abstracts, Vol. 87-1, Spring 1987. M. K. Hatalis and D. W. Greve.
`
`5. “Minimum Detectable Solute Concentration and Accuracy of Compositional Analysis in Atomic-
`Resolution Microscopy.” Proceedings Microbeam Analysis Society, 22nd Annual Mtg., Hawaii,
`Summer 1987 J. M. Howe, D. P. Basile, N. Prabhu and M. K. Hatalis.
`
`6. “Electrical Characteristics of Polysilicon Thin Film Transistors at Low Temperatures.” Proceedings
`International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology1988
`M. K. Hatalis and N. Stylianou.
`
`7. “Effect of Annealing on Grain Size of Undoped and Indium Doped CdSe Thin Films.” The
`Electrochemical Society Extended Abstracts, Vol. 89-1, Spring 1989 M. K. Hatalis and M. R.
`Westcott.
`
`8. “Structural and Electrical Characterization of CdSe Thin Films.” Materials Research Society
`Symposium Proceedings, vol. 164, pp. 87-92, 1990 M. K. Hatalis, F. Lin and M. Westcott.
`
`9. “Effect of Gate Dielectric on Performance of Polysilicon Thin Film