Prof. Yue Kuo (http://yuekuo.tamu.edu)
`
`Dr. Yue Kuo is Dow Professor Chemical Engineering with a joint appointment in Electrical
`Engineering and Materials Science and Engineering, Texas A&M University where he
`established the renowned Thin Film Nano & Microelectronics Research Laboratory. He
`received B.S. (1974) from National Taiwan University and M.S. (1978) and Dr. Eng. Sci.
`(1979) from Columbia University.
`
`Prof. Kuo is one of the few semiconductor experts who have extensive hands-on production
`and R&D experience in thin film transistors (TFTs) for LCDs and ICs industries with a
`distinguished track record. He spent about 20 years at IBM T. J. Watson Research Center,
`Yorktown Heights, NY, Semiconductor Division of Data General in Silicon Valley, etc., as
`well as 17 years at Texas A&M University.
`
`Due to distinguished contributions to science, technology, and leadership, Prof. Kuo was
`honored with Gordon E. Moore Medal of Solid State Science and Technology (an ECS
`biannual award), Fellow of IEEE, Fellow of Electrochemical Society, Fellow of Texas
`Engineering Experiment Station, ECS Electronics and Photonics award, Distinguished
`Research Achievement Award of Texas A&M University, Innovation Award of Texas A&M
`University System, 10 IBM awards, honorary professorships, 160 plenary, keynote, and invited
`speeches in international conferences, universities, and R&D centers, numerous best/most
`downloaded/highlighted/awarded papers, etc. He served on advisory and review boards, and
`panels for US National Academies, industry, universities, and governments. He was consulted
`by the late Prime Minister of Taiwan Mr. Sun, Yuen-Hsien in establishing the $100M national
`R&D project on TFT LCDs, which set up the foundation of today’s multibillion dollar industry.
`
`Prof. Kuo is a recognized expert in the interdisciplinary nano and microelectronics area with
`emphasis on understanding the complicated relationship among device performance, material
`properties, and fabrication processes. His research has resulted in many world records and
`posed great impacts to both academia and industry. For example,
`
`- His 2-photomask TFT fabrication process is the simplest method and has been widely
`used in university and industry laboratories for device, circuit, and material studies.
`- His discovery of the plasma etch induced radiation damages to the a-Si:H TFT and
`repair method have been critical to the worldwide panel production.
`- His theory on the generalized material-process-device relationship is the most widely-
`used guideline in starting new TFT LCD production lines.
`- He was the first to report a practical n+ a-Si:H to intrinsic a-Si:H RIE process that is
`critical to the bilayer TFT production.
`- His novel plasma-based, room-temperature copper etch process has solved a 50-year
`old semiconductor production problem and has been used LCD and IC chips.
`- His work on TFT-driven microchannel biochips for DNA and protein identification has
`been selected to the prestigious APS Virt. J. (3 times) and other honors.
`- He invented many new TFT structures to improve the transistor performance and to
`solve the light sensitivity and yield problems.
`- He is the first to report the a-Si:H embedded floating-gate a-Si:H TFT nonvolatile
`memory device, which is critical to future multifunctional LCDs.
`- His novel idea of comparing and possible merging ULSIC and TFT technologies has
`created enormous interests and caused vigorous discussions in communities.
`
`Prof. Kuo has made major contributions on many ICs and high-k topics. For example
`
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`- He was the first to present the concept of using the doping method to break the
`thermodynamic limit on preparing nm-thin amorphous high-k dielectrics.
`- He first demonstrated the possibility of storing holes and electrons separately by
`embedding selected nanocrystals in the high-k film with physical interpretation.
`- He invented the novel solid state incandescent LED (SSI-LED) that is a solid state
`Edison-style light bulb analogous to the transformation of the vacuum tube triode to the
`solid state transistor. This single-chip, white-light device has a long lifetime of >
`20,000 hours and was fabricated with IC compatible materials and process. The first
`paper in APL was downloaded 1,000 times within 2 weeks of publication and
`highlighted in IEEE IEDM, IEEE Spectrum, J. Vac. Sci. Tech., and other publications.
`- He first reported a new type of antifuse-diode device that can be used in memory and
`switching applications in IC and other electronic products.
`- He was the first to present the perception of combining ULSIC and TFT fields into one
`area based on the common solid state physics, thin film materials, and processes.
`
`Prof. Kuo has authored more than 400 papers, holds 11 patents and more than 40 inventions on
`TFTs, solid state devices, structures and fabrication processes. Many of his papers have been
`mostly cited, downloaded, highlighted, key selection, cover page, etc. articles with honors,
`such as the #1 and #4 most cited papers (as of March 2013) in ECS Trans., Jpn. J. Appl. Phys.,
`J. Vac. Sci. Technol. B, J. Appl. Phys., Appl. Phys. Lett., Microelectronics Reliability, AIP/APS
`Virtual J. Nanoscale Sci. and Technol., Virtual J. Biological Phys. (7 times), IIE Trans., IEEE
`Spectrum, and IEEE EDS News Letters. In addition, he edited 30 journals and conference
`proceedings, two TFT textbooks, and 3 short course books. His Amorphous and Polycrystalline
`Silicon TFT books (Kluwer, 2004) have been the classic textbooks widely used in universities
`and industry. His research results and inventions have been used in worldwide productions.
`They are often quoted in semiconductor magazines and news media.
`
`Prof. Kuo has served in various positions in professional societies, such as Vice President of
`ECS, board of directors, award committees, editorial boards, symposium organizers, chairs, etc.
`He has also organized, chaired, and co-chaired over 90 international conferences on TFTs, ICs,
`thin films, and plasma technology sponsored by IEEE, ECS, MRS, AVS, Jpn. Soc. Appl. Phys.,
`ECI, SID, etc. He has been the founder and key organizer of the world longest, continuously
`held TFT symposium series for 26 years. His ULSIC vs. TFT international conference is
`celebrating the 10th year anniversary in 2015. He has consulted for semiconductor companies
`and advised PhD students in American, European, and Asian universities.
`
`Prof. Kuo’s Thin Film Nano & Microelectronics Research Laboratory is dedicated to
`interdisciplinary research and education. This laboratory is not only an incubator for training
`young talents but also a powerhouse for hosting well-attended seminars delivered by leading
`researchers. Over 47 PhD/MS students and postdoctoral/visiting researchers have graduated
`from this laboratory. Over 3,000 audiences have attended seminars sponsored by this
`laboratory. He has been active in science extension programs in educating engineers, K12, and
`minority students. He has delivered review speeches and short courses in professional societies.
`
`In summary, Prof. Kuo is an outstanding researcher, a distinguished technology leader, and a
`highly established educator on nano science and technology whose work has greatly
`contributed to the success of industry.
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`Curriculum Vitae
`
`Yue Kuo
`January 2016
`
`
`Address
`
`Personal
`
`Research
`
`Experience
`
`Education
`
`Publications and Patents
`
`Invited Talks
`
`4
`
`4
`
`4
`
`4
`
`8
`
`8
`
`9
`
`Awards, Honors, and Professional Activities
`
`
`
` 5-6
`
`6
`
`1.
`
`2.
`
`3.
`
`4.
`
`5.
`
`6.
`
`7.
`
`8.
`
`A. Awards and Honors
`B. Advisory Committees
`C. Chairman or Organizer of International Conferences
`
`9.
`
`Postdoctoral Fellows, Visiting Scholars, and Students Supervised
`
`
`
`10. Research Grants and Contracts
`
`11. Campus Committee Activities
`
`12.
`
`External Committee Activities
`
`13. K12 and extension education
`
`Attachment I – List of Recent Publications and Patents
`
`
`
`A. Journals and Proceedings
`B. Books
`
`C. National Panel Reports
`D. Refereed Papers
`E. Non-refereed Papers
`F. Patents
`
`
`
`Attachment II – List of Recent Invited Talks
`
`
`
`9
`11
`11
`
`15
`
`16
`
`16
`
`16
`
`18
`
`
`
`
`19
`20
`21
`21
`34
`46
`
`48
`
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`CURRICULUM VITAE
`
`YUE KUO
`January 2016
`
`
`1. ADDRESS 235 J. E. Brown Engineering Building, MS 3122
`Thin Film Nano & Microelectronics Research Laboratory
`Texas A&M University, College Station, TX 77843-3122
`Tel. (979) 845-9807
`Fax (979) 458-8836
`
`e-mail: yuekuo@tamu.edu
`http://yuekuo.tamu.edu
`
`2. PERSONAL Married, U.S. Citizen
`
`3. RESEARCH Nano and microelectronics devices, TFTs, ICs, thin film materials,
`
`fabrication processes, plasma technology, and applications.
`
`4. EXPERIENCE
`
`5/15- 5/18
`
`Vice President, Electrochemical Society, Pennington, NJ
`
`12/09
`
`
`Honorary Professor, Shanghai Jiaotong University, China
`Honorary Professor, Nankai University, Tianjin, China
`Honorary Professor, Xian Jiaotong University, China
`
`4/98 - Present Dow Professor, Thin Film Nano & Microelectronics Research Lab
`Chemical Engineering, Electrical Eng., Materials Science & Eng.
`Texas A&M University, College Station, TX
`
`Recipient of Gordon E. Moore Medal for outstanding achievement in
`solid state science and technology, ECS 2015.
`
`1. Thin-film transistors (TFTs).
`This research is focused on thin film materials, fabrication processes,
`for novel TFT applications, such as the floating-gate a-Si:H TFT
`nonvolatile memories, space radiation damage to the a-Si:H TFT,
`bipolar a-Si:H TFTs, CMOS-type a-Si:H TFTs with complete copper
`electrodes, reliability of TFTs on flexible substrates, and TFT-based
`biosensors. We further explored the broad picture of the semiconductor
`technology from fundamental material, process, and device point-of-
`view. We invented the floating-gate a-Si:H TFT nonvolatile memories
`for the low temperature substrate applications. Also, we first presented
`the concept of merging of TFT and ULSIC technologies. The paper on
`this topic was selected a Top 10 most downloaded paper in Jpn. J. Appl.
`Phys. in 2008 as well as in the prestigious AIP/APS Virtual J.
`Nanoscale Sci. and Technol. Five international conferences have been
`held on this subject.
`The first comprehensive 2-volume TFT textbook was published. It has
`been widely used as the textbook in universities and a reference in
`industry. It was translated into a foreign copy was within one year.
`
`2. ULSIC technology and nonvolatile memory devices.
`This research has been focused on exploring new materials, device
`
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`structures, and reliability physics to advance the ULSIC technology. For
`example, the ultra-low EOT high-k gate dielectrics, nanocrystals
`embedded nonvolatile memories, antifuse, ultra low k dielectrics, life
`extension of polymeric pellicles, etc. have been investigated. The
`concept of using the doping method to break the thermodynamic limits
`on the high-k dielectric’s interface and bulk properties was presented and
`studied. The sub 1 nm EOT thick Zr-doped HfO2 high-k film with
`excellent electrical characteristics was achieved. One of his papers has
`been selected as a top 20 most downloaded paper in J. Vac. Sci. Technol.
`B in May 2013. Separately, the nanocrystals embedded high-k
`nonvolatile memory papers were 3 times selected to appear in the
`prestigious AIP/APS Virtual J. Nanoscale Sci. and Technol. The high-k
`reliability paper was selected as a Top 25 Hottest paper in
`Microelectronics and Reliability J. and a Key Article in IIE Trans.
`Special Issue on Quality and Design Issues in Nanomafacturing Systems.
`In addition, the 2-step breakdown process of the ultra thin high-k stack
`and the mechanism were studied using the novel ramp-relax method.
`Also, the hole-trapping memory devices based on nanocrystalline ITO or
`MoOx embedded high-k thin films were discovered, which greatly
`expanded the memory functions of the ULSICs. His papers have been
`ranked #1 and #4 most cited papers in the ECS Transactions history as
`to March 2013.
`A novel super low k, i.e., < 2, polyimide film was achieved by the
`hydrogenation plasma modification method due to change of chemical
`bonds and physical structures. This is an important backend process.
`An ultra thin film, i.e., 5 nm thick, passivation layer was sputter
`deposited on the polymeric 157 nm and 193 nm pellicles to extend their
`lifetimes. The early failure of the pellicle was prevented due to the
`drastic improvement of the heat dissipation rate across the surface. The
`environmental resistance was also improved with this method.
`
`3. Plasma thin film technology.
`A novel plasma-based room-temperature copper etch process was
`invented and extensively investigated, which is a breakthrough of the
`semiconductor fabrication history. According to an industry executive,
`this is a disruptive technology. The result has been cited in news media,
`e.g., Semiconductor International (02/02), Electronic News (04/01/02),
`etc. It has been a case study subject of several MBA programs. The
`reliability of the etched fine line was further investigated for ICs,
`displays, and flexible electronics applications. This process has been
`used in LG’s 15-inch flat panel displays and TI’s BiCMOS chips. One
`of his recent papers on electromigration of the etched copper lines on
`steps was selected in the J. Appl. Phys. Research Highlights and News
`(April 2012) and a Top 20 Most Read Articles in this issue.
`Additionally, fundamental studies on material, electrical, and optical
`properties of sub 100ºC PECVD a-Si:H, n+, p+, and SiNx thin films
`were carried out. These films were fabricated into transistors, sensors,
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`and biochips, which opened the door to low-temperature fabrication of
`nano devices.
`
`4. Optoelectronics and biochips.
`We invented a novel type of solid state incandescent LED (SSI-LED).
`This result closed a major missing function of the amorphous oxide thin
`films, i.e., as conductors, superconductors, dielectrics, and semiconductors
`but not light emission materials. Different from principles of the
`conventional p-n junction, QW, QD, and organic LEDs, light emission of
`the new device is due to thermal excitation of nano resistors embedded in
`the high-k film. This is the first single-chip white LED reported in the
`open literature. Since it is prepared by room-temperature sputtering, the
`fabrication process is much simpler and cheaper than those of the
`conventional LEDs. The first paper in APL was downloaded more than
`1,000 times within 2 weeks of publication. It has been selected as a
`Research Highlighted paper by APL editors (02/05/ 2013), a cover page
`issue in J. Vac. Sci. Technol. B (01-02/2014), an invited paper in IEDM
`(12/2014), an IEEE Spectrum Tech News, (12/2014), an invited paper in
`IEEE News Letters (04/2015), an AMFPD plenary paper (07/2015), an
`ISSP invited paper (07/2015), an innovation award (TAMUS, 04/2014),
`and other honors. The result also stimulated interest from researchers and
`industry through the world. It is expected that this new LED will have
`tremendous impacts in lighting, optical communication, flat panel
`displays, and many other areas.
`Separately, a new TFT-driven microchannel biochip that simultaneously
`separates and identifies proteins or DNA in a microliter of sample mixture
`has been demonstrated and studied. The chip combined functions of
`molecular screening and the solid-state device. The new chip showed great
`advantages over the conventional electrophoresis equipment in shortening
`the detection time, reducing device size, lowering the power consumption,
`and decreasing the device cost by several orders of magnitude.
`Fundamental issues on biomolecule adsorption and migration on the
`plasma-modified surface as well as the TFT contact resistance change
`under the electric stress condition were delineated. Papers on this subject
`were selected to appear in AIP/APS Virt. J. Bio. Phys. Res. and Virt. J.
`Nanoscale Sci. and Technol. (3 times).
`
`5. Leadership.
`Prof. Kuo is a technology leader who has served as an ECS VP as well as
`a board member, conference organizer, committee member, advisor, etc.
`for US National Academies, international profession societies,
`universities, industry, and governments, globally. He has a leading figure
`in promoting TFTs as a general-purpose technology beyond the LCD pixel
`driving. He also first presented the novel concept of generalizing the TFT
`and ULSIC technologies through scientific comparison and discussions.
`He has led large-scale research proposals, organized international
`conferences, delivered keynote and invited speeches, advised and
`reviewed national and international research programs, and consulted for
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`IC and display companies throughout the world.
`
`6. Global education programs.
`Prof. Kuo has advised 47 PhD, MS, and visiting scholars and more than
`120 undergraduate students in Texas A&M University and served as an
`examiner/advisor of 10 PhDs in other US and foreign universities. He
`taught short courses in international conferences. He has also held K12
`education programs for local high school students and teachers.
`
`8/87 – 4/98 Research Staff Member
`IBM, T. J. Watson Research Center, Yorktown Heights, NY
`
`1. TFT devices, processes, and materials.
`This research was aimed at advancing the large-area TFT fabrication
`process and improving device performance through engineering the
`bulk and interface thin film properties. For example, the critical power
`concept, which was based on the simultaneous deposition and etching
`mechanisms, was introduced to define limiting factors on deposition
`rate and uniformities (on thickness, stress, composition, etc.) of the
`large-area PECVD film. In another case, for the first time in the open
`literature, thin film material properties, e.g., the SiNx refractive index,
`could be successfully correlated to TFT characteristics, e.g., the
`minimum threshold voltage. In addition, a dual gate dielectric structure
`was presented to improve TFT characteristics, which was quoted in the
`“Tech Highlights” section of the ECS Interface (June 1994). Also, the
`world’s simplest 2-mask fabrication process for the complete inverted,
`staggered tri-layer TFT structure was invented, which was reported in
`Semiconductor International (June 1992) and other news media. The
`complete TFT could be fabricated in one day. This process has been
`routinely used in university and industry laboratories. The basic
`structure has also been used in commercial products. Thirty new TFT
`structures and fabrication processes, e.g., multichannel, vertically
`redundant, horizontally redundant, or graded gate dielectric transistors,
`selective n+ etch, and pulsed RTA poly-Si process, were invented.
`Many of them have been used in products.
`
`2. Plasma thin film technology.
`Plasma-surface reactions, which were critical to deposition and etching
`of thin films, have been investigated. One example is the development
`of a generalized etching-deposition model that successfully correlated
`the plasma characteristics to the film’s material properties. The
`combination of the plasma phase chemistry and the ion bombardment
`energy effectively explained the film formation mechanism and
`eventually the device characteristics. Additionally, the RIE study
`cohesively integrated process parameters with film’s surface properties
`and eventually the TFT behavior. Also, new plasma process results on
`radiation damages to bulk film and interfaces, polymer swelling, and
`the dopant effect on etch selectivity were obtained, which are critical
`to the nano device structure and the large-area TFT array production.
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`His research results have been used in mass production of TFT arrays
`since the beginning of the industry in late 1980s.
`
`3. Consulted for production facilities and R&D institutions.
`In addition to supporting IBM production lines in Japan, the research
`results have been recognized internationally, such as invitation to join
`numerous industry, university, and government advisory boards, to
`review research proposals and programs, and to deliver invited
`speeches at universities, laboratories, and conferences. Prof. Kuo has
`been interviewed by major news media (e.g., C&E News, Reuters,
`Industry Week, and Semiconductor International) for research results
`and comments on new technologies. He has been recognized as a key
`figure in TFT field due to his outstanding technical achievement and
`eminent professional activities.
`
`8/84 - 8/87
`
`Principal Process Engineer and Manager of Diffusion and Thin Films
`Semiconductor Division, Data General Corp., Sunnyvale, CA
`Dr. Kuo has developed new plasma etching and PECVD processes for
`NMOS, CMOS, and Bipolar production lines. He invented a new
`PECVD oxide process based on the CO2 chemistry, researched on
`multilevel interconnection and planarization methods (computer
`modeling, etchback, and polyimide), demonstrated a novel selective
`epitaxy growth (SEG) process, and developed a new LOCOS
`isolation process. Due to restrictions on publication, these results
`were not available to the general public. However, many of them are
`ahead of industry by several years.
`
`8/82 - 8/84 Visiting Research Engineer, University of California, Berkeley, CA
`
`Researched on surface modification of solid materials by CVD,
`oxidation, and nitridation methods for improved chemical affinities.
`
`1/80 - 8/82
`
`
`Pilot Lab Manager, R&D Department, Bayer Corp. Charleston, SC
`Dr. Kuo was in charge of setting up a new pilot plant for the
`production of special organic chemicals and high temperature
`polymers. He also supervised engineers and technicians on daily
`operation.
`
`9/76 - 12/79 Graduate Research Assistant, Columbia University, New York, NY
`He conducted research on facilitated mass transfer through polymer-
`
`based solvent membranes for chemicals separation. The study included
`polymer synthesis, thin film preparation, physical chemistry, and
`computer modeling.
`
`5. EDUCATION
`
`9/76 - 12/79 Doctor of Engineering Science (79) and MS (78), Columbia University,
`New York, NY.
`
`9/70 - 6/74
`
`BS (74), National Taiwan University, Taipei, Taiwan.
`
`6. PUBLICATIONS AND PATENTS
`
`Major author of more than 400 publications. See list of recent publications in Attachment I.
`
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` Editor/Guest Editor: 33 journals and proceedings/transactions volumes.
` Books: 2 textbooks and 4 short course books.
` Patents: total 11. Invention disclosures: > 40.
`
`
`
`7. INVITED TALKS
`
`> 160 plenary, keynote, and invited talks. See Attachment II for recent list.
`
`8. AWARDS, HONORS, AND PROFESSIONAL ACTIVITIES
`
`
`
`A. Awards and Honors
` Gordon E. Moore Medal of Outstanding Achievement in Solid Science and
`Technology, ECS, 2015.
` Vice President, Electrochemical Society, Pennington, NJ (05/15-05/18).
` Plenary speech, 22nd International Workshop Active Matrix Flat Panel Displays
`and Devices, Kyoto, Japan (07/01/2015).
` Texas Experimental Engineering Station Fellow (05/2015).
`
`Invited paper in IEDM San Francisco, CA (12/15/2014) which was cited as an
`IEEE Spectrum Tech News (12/23/2014). http://spectrum.ieee.org/tech-
`talk/semiconductors/devices/meet-the-microscopic-light-bulb
` Paper ranked #1 most-cited solid state article in ECS Transactions as of July 1,
`2014. ECS Trans. 2006 1(5): 447-454; doi:10.1149/1.2209294
`Innovation Award, Texas A&M University System, College Station, TX
`(04/25/2014).
` Cover page article in J. Vac. Sci. Technol. B, January/February 2014.
` Keynote speech, Symposium of Semiconductor Science and Technology, 7th
`Sino-US Chemical Engineering Conference, Beijing, China, Oct. 15, 2013.
` Memorial (plenary) speech, 20th anniversary of International Workshop on
`Active-Matrix Flatpanel Displays and Devices, Kyoto, Japan, July 3, 2013.
` A top 20 Most Downloaded Paper in J. Vac. Sci. Technol. B on a new metal-
`doped High-k film, May 2013.
` A Research Highlight paper in Appl. Phys. Letts., February, 2013 on the new
`type of LED based on thin film metal oxides.
` Distinguished Research Achievement Award (the highest level university award
`to faculty), Association of Former Students and Texas A&M University, 2012.
` Ranked #1, #4, and #29 Most-Cited Articles in ECS Trans. as of December 2012.
` A News Announcement paper in J. Applied Physics selected by editors, April,
`2012 on paper of Cu electromigration.
` A Key Article by editor of IIE Trans. Special Issue on Quality and Design Issues
`in Nanomafacturing Systems, 44 496 2012.
` Paper selected to AIP/APS Virtual J. Nano. Science & Technology 24(5) 2011.
` Paper selected to AIP/APS Virtual J. Nano. Science & Technology 22(22) 2011.
` Keynote Speaker, China Semiconductor Technology International Conference,
`Shanghai, China, 03/2010.
` Honorary Professor, Shanghai Jiaotong University, 12/2009.
` Honorary Professor, Nankai University, 07/2009.
` Honorary Professor, Xi’an Jiaotong University, 07/2009.
` Plenary Speaker, Flexible Electronics, Tarragona, Spain, 04/2008.
`
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` Paper selected a Top 20 most downloaded paper in Jpn. J. Appl. Phys. for 3
`months in 2008.
` Paper selected to AIP/APS Virtual J. Nano. Science & Technology 17(21) 2008.
` Paper selected to AIP/APS Virtual J. Nano. Science & Technology 17(17) 2008.
` Paper selected to AIP/APS Virtual J. Biological Physics Research 15(10) 2008.
`
`IEEE Electron Device Society Distinguished Lecturer, 2007-present.
` Electrochemical Society Electronics and Photonics Division Award, 2007.
` Keynote Speaker, AM-FPD ’07, Hyogo, Japan, 07/11-13/2007.
` 3rd award poster paper in ECI Intl. Conf. Semiconductor Technology of ULSIC
`and TFT, Barga, Italy, 07/29-08/03/2007.
` Advisor of Applied Materials Semiconductor Fellowship awardee, 2007-2009.
` Paper selected a Top 25 Hottest article in 2006 Microelectronics and Reliability.
`Science Direct.
` Paper selected to AIP/APS Virtual J. Nano. Science & Technology 13(15) 2006.
` Paper selected to AIP/APS Virtual J. Nano. Science & Technology 13(5) 2006.
` Paper selected to AIP/APS Virtual J. Biological Physics Research 11(8) 2006.
` Distinguished Seminar, National Science Council and TSMC, Taiwan,
`12/14/2005.
` Keynote Speaker, US/China/Japan Joint Chemical Engineering Conference,
`Beijing, 10/2005.
` Fellow, Texas Engineering Experiment Station, 09/2005.
` Keynote Speaker, Nano Device Technology (SNDT) Symposium, Hsin-Chu,
`Taiwan, 05/04/2005. One famous researcher was invited by a committee of
`established researchers to deliver the seminar in this conference of 200 papers.
` National Science Council Distinguished Seminar, Taiwan, 12/2003. One famous
`researcher was invited to deliver the seminar sponsored by the NSF equivalent
`organization.
` Keynote Speaker, Renowned Scientists and Engineers, CACS Conference,
`Houston, TX, 2001. One famous researcher was invited to deliver the seminar in
`the Chinese American Chemical Society during the AIChE annual meeting.
` Fellow, Electrochemical Society, 1999.
` Fellow, IEEE Electron Devices Society, 1998.
`
`IBM External Honor Awards, consecutively 7 years, 1987 – 1997.
`
`IBM Invention Plateau Awards, 2, 1995 and 1997.
`
`IBM Research Division Technology Award, 1995.
` Phi Lambda Upsilon.
` Best paper final list in 2002 IEEE Sensor Conference Award.
` Advisor to graduate student (Chi-Chou Lin) who was awarded Phillips 66
`Fellowship Award 2013.
` Advisor to graduate student (Chi-Chou Lin) who was awarded 3rd Place of The
`Graduate Student Poster Session, Texas A&M University, 2011.
` Advisor to graduate student award final list in 2001 AVS J. Colburn and H.
`Winters Award (S. H. Lee). This award was determined by a committee
`composed of outstanding plasma researchers.
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` Advisor to undergraduate student award of 2002 Texas A&M University Student
`Research First Place Award (D. Kraptchetov).
`
`B. Advisory Committees
` Collaborative Research Fund Committee, University Grant Committee, Hong
`Kong, 2015-2016.
` Hong Kong Research Grants Council (NSF equivalent), Engineering Joint
`Research Scheme Panel, 2013-2016.
` Task Force of Electrochem. Soc. Publication Committee, 2014.
` Hong Kong Research Grants Council (NSF equivalent), Engineering Panel,
`2008-2012.
` US National Academies’ Chemical Science and Technology Panel, 2009.
` Research Program, Department of Physics, National Sun Yet-Shen University,
`Kaohsiung, Taiwan, 2008-2011.
` Ministry of Economic Affairs sponsored Large-scale research project on
`Components and Enabling Technologies for High Image Quality Smart Panels,
`National Chiao-Tung University, Hsin-Chu, Taiwan, 07/06 - 07/08.
` National Academies’ Chemical Science and Technology Panel, 2007.
` Review Committee, Ministry of Education National Chair Award, Taiwan,
`06/05.
` Aerospace Vehicle Systems Institute, Radiation Effects on Current & Future
`Avionics Systems, Texas A&M University, 02/02-present.
` Technical Advisor, SemiconBay.com, Etching and Thin Film Sections,
`Sunnyvale, CA, 12/99-12/02.
` External Advisory Board, Electrical and Computer Engineering Department,
`Iowa State University, Ames, IA, 10/97.
` Advisory Committee on Technology Roadmap,
`MKS Instruments, Inc., Andover, MA, 07/25/96.
` Review Board, Microelectronics Research Center,
`Iowa State University, Ames, IA, 04/96.
` Advisory Board on TFT/LCD Development, $100M project,
`Department of Economic Affairs, Taiwan, ROC, 10/92.
` NSF Proposals Review Panels, 1999-2012.
`
`C. Chairman and Organizer of International Conferences
`1. Advisory Committee, 7th International Conference on Computer Aided Design
`for Thin-Film Transistors (CAD-TFT2016), Beijing, China, October 26-28,
`2016.
`2. Organizer and Chairman, 13th International Thin Film Transistor Technologies
`(TFT 13) Symposium, Electrochem. Soc., Honolulu, October 2-7, 2016.
`3. Program committee, 12th International Thin-Film Transistor Conference,
`Hsinchu, Taiwan, February 25-26, 2016.
`4. Symposium co-organizer, ECS International Symposium on Nanocrystal
`Embedded Dielectrics for Electronic and Photonic Devices, Phoenix, AZ, Oct.
`11-16, 2015.
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`5. Manuscript Review Committee, SBMicro 2015, 30th Symposium on
`Microelectronics Technology and Devices, Salvador - Bahia - Brazil - August 31
`to September 4, 2015.
`6. International Advisory Board and session chair, 2015 International Symposium
`on Sputtering and Plasma (ISSP), Kyoto, Japan, July 8-10, 2015.
`7. Program Committee and session chair, AM-FPD ’15, Japan Society of Applied
`Physics, Kyoto, Japan, July 2015.
`8. Organizer and Chair, Engineering Conferences International 5th International
`Conference on Semiconductor Technology for Ultra Large Scale Integrated
`Circuits and Thin Film Transistors, Tahoe City, CA, June 14-18, 2015.
`9. Program Committee, 11th International Thin-Film Transistor Conference,
`Rennes, France, February 26-27, 2015.
`10. Advisory Committee, 1st China TFT Conference, Shanghai, China, Oct. 15-17,
`2014.
`11. Organizer and Chairman, 12th International Thin Film Transistor Technologies
`(TFT 12) Symposium, Electrochem. Soc., Cancun, October 5-10, 2014.
`12. Program Committee, AM-FPD ’14, Japan Society of Applied Physics, Kyoto,
`Japan, July 2014.
`13. Conference co-chair and Chair of Awards Committee, SEMI and ECS China
`Semiconductor Technology International Conference (CSTIC), Shanghai, March
`18-20, 2014.
`14. Organizer and Symposium Chair, Semiconductor Science and Technology in
`Chemical Engineering Symposium, 7th Sino-USA Joint Chemical Engineering
`Conference, Beijing, China, October 14-19, 2013.
`15. Organizer and Chair, Engineering Conferences International 4th International
`Conference on Semiconductor Technology for Ultra Large Scale Integrated
`Circuits and Thin Film Transistors, Grenoble, France, July 8-11, 2013.
`16. Program Committee, AM-FPD ’13, Japan Society of Applied Physics, Kyoto,
`Japan, July 2-5, 2013.
`17. Executiv