(19) Japan Patent Office (JP)
`(12) Patent Publication (A)
`(11) Publication number: SHO 63-181355
`(43) Publication Date: 26. 07.1988
`(51)
`IPC
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`
`
`Identification
`Code
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`H01L
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`21/88
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`JPO file
`number
` A-6708-5F
`D-6780-5F
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`Request for Substantive Examination: No
`Number of Claims: 1 (2 pages in total)
`(21) Application number: SHO 62-13591
`(22) Date of filing:
`22.01.1987
`(71) Applicant: YAMAGATA NEC CORPORATION
`12-12, Kita-machi 4 chome, Yamagata-shi, Yamagata
`(72) Inventor: ATSUSHI ONO
`12-12, Kita-machi 4 chome, Yamagata-shi, Yamagata
`YAMAGATA NEC CORPORATION
`
`
` (74)Agent: Patent attorney Susumu UCHIHARA
`
`
`
`Specification
`
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`1. Title of the Invention
`Semiconductor Device
`
`2. Claims
`A semiconductor device, comprising: an inner wiring; a dummy wiring; and a pallet,
`wherein the inner wiring has a role as a wiring between elements in the pellet,
`wherein the dummy wiring does not have a role as a wiring, and
`wherein the dummy wiring is disposed on the same layer in the pellet so that the sum of
`the area of the inner wiring and the area of the dummy wiring is equal or more than
`50% of the area of the pellet.
`
`3. Detailed Description of the Invention
`
`ChinaStar Ex.1010
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`Page 1 of 4
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`<Field of Industrial Application>
`
`The present invention relates to a semiconductor device, specifically relates to
`a pattern construction for preventing of side-etching of an aluminum metal wiring in
`the case of formation of the aluminum metal wiring by using a reactive ion etching
`process.
`<Prior Art>
`
`Conventionally, when an aluminum metal wiring is formed, as shown in Fig.2,
`a method where aluminum layer 13 is isotopically wet-etched by etchant 15 using mask
`layer 14 as a mask has been used. These days, owing to enhancement of integration
`degree of the semiconductor, the miniaturization thereof has progressed, and an
`anisotropic reactive ion etching method has become used as shown in Fig.3. In
`this
`reactive ion etching method, product 26, which is obtained by the reaction of plasma 25
`and the product released from resist 24 formed on the upper layer of aluminum metal
`23, is adhered to the side wall of the aluminum metal wiring, suppresses the
`side-etching and further sustains anisotropic etching.
`<Problem to be solved by the invention>
`
`The above conventional reactive ion etching method is an anisotropic etching
`method. In the case where the lower layer of the aluminum metal wiring is formed of
`nitride film, etching of the aluminum metal progresses, and when the lower layer
`appears, nitrogen atoms released from this nitride film and the product formed on the
`side wall of the aluminum metal wiring react, thereby the product is removed. In this
`case, the more the nitrogen atoms are, the faster the reaction advances.
`
`There is a drawback that, once this product is removed, the etching cannot
`maintain anisotropic nature and side-etching advances.
`<Means for Solving the Problems>
`
`In the present invention, a pellet includes a dummy wiring which does not have
`a role as a wiring so that an amount of exposure of the nitride film under the aluminum
`metal lower layer can be taken small.
`<Examples>
`
`Next, the present invention will be explained below with reference to the
`drawings.
`
`Fig.1 is a diagram of one example of the present invention.
`
`1 is a pellet. In the case where the total area within the pellet of aluminum
`metal wiring 2 which is patterned on the pellet drops to below 50% of the pellet area,
`dummy wiring 3, which does not have a role as a wiring, is disposed on the pellet, and
`the area of the dummy wiring 3 is adjusted so that the total area of the inner wiring 2
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`Page 2 of 4
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`and the dummy wiring 3 is equal or more than 50% of the pellet area.
`<Effect of the Invention>
`
`As explained above, according to the present invention, in the process of
`forming an aluminum metal wiring by the reactive ion etching method, side-etching
`generated in the aluminum metal wiring can be prevented by disposing a dummy
`wiring in a pallet, the dummy wiring not having a role as a wiring between elements in
`the pellet.
`
`Meanwhile, the present invention can be applied to an aluminum alloy such as
`aluminum-silicon, aluminum-silicon-copper, in addition to a pure aluminum metal.
`
`4. Brief Description of the Drawings
`
`Fig.1 is a plan view showing one example of the present invention.
`1…pellet, 2…aluminum metal wiring, 3…dummy wiring
`
`Fig.2 is a cross-section diagram formed by a conventional wet-etching method.
`11…wafer, nitride film, 13…aluminum metal layer, 14…resist, 15…etchant
`
`Fig.3 is a cross-section diagram formed by a reactive ion etching method.
`21…wafer, 22…nitride film, 23…aluminum metal, 24…resist, 25…ion, 26…product
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`Page 3 of 4
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`NAME OF TRANSLATING COMPANY: TRY International IP LAW FIRM
`ADDRESS OF TRANSLATING COMPANY: Akasaka TK Building 101, 2-16-6, Akasaka,
`Minato-ku, Tokyo
`
`DECLARATION AND CERTIFICATE OF TRANSLATION
`
`TO WHOM IT MAY CONCERN:
`
`I/we, Try international IP law firm, hereby certify that I/we translated the documents below from
`Japanese
`into English. The translations are accurate and complete translations of the original
`documents.
`
`Translated materials: JP2000098909. JPH02189922. and JPS63181355
`
`Declarant hereby acknowledges that any willful false statements made in this Declaration are
`punishable by fine or imprisonment, or both. Furthermore, all statements made of Declarant's
`own knowledge are true, and all statements made on information and belief are believed to be
`true.
`
`Executed this
`
`^ day of 1^-
`
`,2015,
`
`.N\
`
`LI YONGHU/President&CEO
`
`Page 4 of 4