(19) Japan Patent Office (JP)
`(12) Patent Publication (A)
`(11) Publication number: P2000-98909A
`(43) Publication Date: 07. 04. 2000
`(51)
`Int.Cl.7
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`Identification
`Code
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`FI
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`G09F
`G02F
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`G09F
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`9/00
`1/13
`1/1343
`9/30
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`303A
`101
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`330A
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`Theme
`Code
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`9/00
`1/13
`1/1343
`9/30
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`303
`101
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`330
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`G09F
`G02F
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`G09F
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`Request for Substantive Examination: None
`Number of Claims: 8 OL (9 pages in total)
`(21) Application number: 10-268326
`(22) Date of filing:
`22.09.1998
`(71) Applicant: 000001889
`SANYO Electric Co., Ltd.
`5-5, Keihanhondori 2-chome, Moriguchi-shi, Osaka
`(72) Inventor: NODA TOMOYUKI
`5-5, Keihanhondori 2-chome, Moriguchi-shi, Osaka
`inside SANYO Electric Co., Ltd.
`(74)Agent: 100068755
`Patent attorney Hironori ONDA
`
`
`ChinaStar Ex.1005
`
`Page 1 of 15
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`

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`(54) Title: Solid device with pattern-formed film material and pattern-forming
`method
`(57) Abstract
`The problem to be solved is, for example, to prevent the damage to thin-film
`electrodes associated with the substrate cleaning with a brush scrubber or the like in a
`liquid crystal display in which a thin-film electrode is pattern-formed on the substrate
`surface. The solution is as follows. Pixel electrodes 22 formed by ITO are provided in a
`matrix shape on a transparent insulating substrate of a TFT array side substrate 11 which
`constitutes a polysilicon-typed TFT active-matrix liquid crystal display. Further, on the
`transparent insulating substrate of the array side substrate 11, in order to prevent the
`damage to the pixel electrodes 22 during the substrate cleaning with a brush scrubber or
`the like, a dummy film 5 with a film thickness thinner than that of the pixel electrode 22
`is provided so as to surround the periphery of the pixel electrodes 22 group.
`
`What is claimed is,
`1. A solid device with a pattern-formed film material, wherein,
`the solid device brush-cleaned in a state where an appropriate film material has been
`pattern-formed on a surface, comprises a dummy film which is pattern-formed so as to
`surround a periphery of the film material on the same surface of the device.
`2. The solid device with a pattern-formed film material according to claim 1, wherein,
`the dummy film is pattern-formed with a film thickness thinner than a film thickness of
`the film material.
`3. The solid device with a pattern-formed film material according to claim 1 or 2,
`wherein,
`the dummy film has a gradient that the film thickness thereof is reduced gradually
`toward the peripheral of the device, or is pattern-formed stepwise.
`4. The solid device with a pattern-formed film material according to any one of
`claims 1 to 3, wherein,
`the dummy film is pattern-formed of the same material as the film material.
`5. The solid device with a pattern-formed film material according to any one of
`claims 1 to 3, wherein,
`the dummy film is pattern-formed of a different material from the film material.
`6. The solid device with a pattern-formed film material according to any one of
`claims 1 to 5, wherein,
`the solid device is a transparent insulating substrate provided with a semiconductor
`element for liquid crystal driving of a liquid crystal display, the film material is a pixel
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`transparent electrode pattern-formed on a surface of the transparent insulating substrate.
`7. A method for pattern-forming a film material on a surface of a solid device,
`wherein,
`at least a film thickness of the film material pattern-formed in an outermost periphery of
`the solid device is made thinner than a film thickness of the film material
`pattern-formed in other portions.
`8. A pattern-forming method, comprising:
`a process of depositing a film material on a surface of a solid device; and
`a process of etching the film material by plasma dry etching with increased plasma
`reaction pressure so that a film thickness of the deposited film material becomes thinner
`towards an end portion thereof.
`
`DETAILED DESCRIPTION OF THE INVENTION
`[0001]
`Field of the Invention
`The present invention relates to a solid device with a pattern-formed film material
`such as a liquid crystal display with a pattern-formed transparent electrode as well as to
`a pattern-forming method.
`[0002]
`Related Art
`Conventionally, in a display, for example, in a polysilicon-typed TFT (Thin Film
`Transistor: TFT) mode active matrix liquid crystal display, etc., a transparent thin-film
`electrode such as ITO (Indium Tin Oxide) is used as the pixel electrode thereof. This
`transparent
`thin-film electrode
`is
`formed by patterning after
`forming
`the
`polysilicon-type TFT on a glass substrate or the like. Then, especially for improving the
`yield, a substrate cleaning with a brush scrubber or the like is carried out before moving
`on to the subsequent manufacturing process.
`[0003]
`Here, the substrate cleaning using the brush scrubber will be described briefly with
`reference to FIG. 10 to FIG. 12. A partial planar structure of the TFT array side substrate
`1 of the liquid crystal display described above is shown in FIG. 10, and a cross-sectional
`structure taken along the line X-X of FIG. 10 is shown in FIG. 11. Incidentally, in the
`cross-sectional structure shown in FIG. 11, illustrations of TFT or the like, portions in
`the liquid crystal driving other than the pixel electrode are omitted.
`[0004]
`In the TFT array side substrate 1 shown in FIG. 10, the pixel electrode 2 of each of
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`the display pixels constituting the liquid crystal display is pattern-formed in the vicinity
`of the intersection points of the drain wires DL connected to the drain driver and the
`gate lines GL connected to the gate driver. These pixel electrodes 2 are formed on
`approximately the entire surface of the TFT array side substrate 1 with a predetermined
`number of pixels in a matrix shape, but only a part of them is shown in FIG. 10.
`[0005]
`Further, the pixel electrodes 2 are made of the ITO, and are connected to the source
`electrodes (not shown) of the TFT via the contact holes 3. Further, the pixel electrodes 2
`are, as shown in FIG. 11, formed on a transparent insulating substrate (glass substrate or
`the like) 1a constituting the TFT array side substrate 1.
`[0006]
`Next, based on the plan view shown in FIG. 12, a cleaning mode of the TFT array
`side substrate 1 using a brush scrubber will be described. During substrate cleaning, as
`shown in FIG. 12, the TFT array side substrate 1 is placed on a predetermined rotating
`table (not shown), and when rotating the rotating table, the brush portion 4 of the brush
`scrubber rotated similarly is made to abut against the surface of the substrate 1. Then,
`the entire surface of the substrate 1 is cleaned while moving the brush portion 4 in
`arrow Y direction in FIG. 12. It should be noted that at this time, a chemical cleaning
`using a chemical solution is often used in combination.
`[0007]
`Problems to be solved by the Invention
`Incidentally, in the case where the TFT array side substrate 1 having the pixel
`electrodes 2 of ITO or the like as described above which are pattern-formed on the
`topmost portion thereof is cleaned by using a brush scrubber, as shown in FIG. 13, the
`electrode first abutting against the rotating brush 4a of the brush scrubber among the
`pixel electrodes 2, may be damaged by the mechanical force thereof. In this way, when
`the pixel electrode 2 is damaged in the cleaning process of the substrate 1, it becomes a
`pixel defect, and is thus to be a cause of lowering the product yield of liquid crystal
`display.
`[0008]
`Incidentally, in the solid device where a film material is pattern-formed on the surface
`and then surface-cleaned by the brush scrubber or the like, the device not being limited
`to such liquid crystal display but also including semiconductor device and the like, ,
`such circumstances have also become generally common.
`[0009]
`The present invention has been made in view of the above circumstances, and the
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`object thereof is to provide a solid device with a pattern-formed film material and a
`pattern-forming method capable of well protecting the film material pattern-formed on
`the surface with respect to the cleaning with a brush scrubber or the like, and
`consequently improving the product yield.
`[0010]
`Means for Solving the Problems
`To achieve the above object, in the invention according to claim 1, a solid device
`brush-cleaned in a state where an appropriate film material has been pattern-formed on
`a surface, comprises a dummy film which is pattern-formed so as to surround a
`periphery of the film material on the same surface of the device.
`[0011]
`In this configuration, a dummy film which is pattern-formed so as to surround the
`periphery of the film material in the same surface of the solid device is provided.
`Accordingly, when the solid device is brush-cleaned by using a brush scrubber or the
`like, the brush of the brush scrubber first abuts against the dummy film before abutting
`against the pattern-formed film material. Therefore, the damage to the film material by
`the mechanical force of the brush of the rotating brush scrubber is prevented.
`[0012]
`Further, in the invention according to claim 2, in the solid device with a
`pattern-formed film material of claim 1, the dummy film is pattern-formed with a film
`thickness thinner than the film thickness of the film material.
`[0013]
`In this configuration, when the solid device is brush-cleaned by using for example a
`brush scrubber or the like, the brush of the brush scrubber first reduces the riding step
`difference of the pattern-formed dummy film which is thinner than the film thickness of
`the film material, so as to ride on the film material. Therefore, the damage to the film
`material by the mechanical force of the brush of the rotating brush scrubber is well
`prevented.
`[0014]
`Further, in the invention according to claim 3, in the solid device with a
`pattern-formed film material of claim 1 or 2, the dummy film has a gradient that the
`film thickness thereof is reduced gradually toward the peripheral of the device, or is
`pattern-formed stepwise.
`[0015]
`In this configuration, when the solid device is brush-cleaned by using for example a
`brush scrubber or the like, the brush of the brush scrubber rides on the film material
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`suitably along the gradient or the step of the dummy film. Therefore, the damage to the
`film material by the mechanical force of the brush of the rotating brush scrubber is well
`prevented.
`[0016]
`Further, in the invention according to claim 4, in the solid device with a
`pattern-formed film material of any of claims 1 to 3, the dummy film is pattern-formed
`of the same material as the film material.
`[0017]
`According to this configuration, a separate mask or the like for forming the dummy
`film is not required, and the manufacturing process is simplified. Further, in the
`invention according to claim 5, in the solid device with a pattern-formed film material
`of any of claims 1 to 3, the dummy film is pattern-formed of a different material from
`the film material.
`[0018]
`According to this configuration, the degree of freedom in design of the dummy film
`is enhanced. Further in the invention according to claim 6, in the solid device with a
`pattern-formed film material of any of claims 1 to 5, the solid device is a transparent
`insulating substrate provided with a semiconductor element for liquid crystal driving of
`a liquid crystal display, the film material is a pixel transparent electrode pattern-formed
`on the surface of the transparent insulating substrate.
`[0019]
`According to this configuration, in the liquid crystal display, the damage to the pixel
`transparent electrode associated with the brush-cleaning of the transparent insulating
`substrate surface is well prevented. Further, in the invention according to claim 7, in the
`method for pattern-forming a film material on the surface of a solid device, at least the
`film thickness of the film material pattern-formed in an outermost periphery of the solid
`device is made thinner than the film thickness of the film material pattern-formed in
`other portions.
`[0020]
`In the same forming method, since the step difference of the film material is relieved,
`the damage to the film material associated with the brush-cleaning is also well
`prevented. Further, in the invention according to claim 8, the pattern-forming method
`comprises: a process of depositing a film material on a surface of a solid device; and a
`process of etching the film material by plasma dry etching with increased plasma
`reaction pressure so that a film thickness of the deposited film material becomes thinner
`towards an end portion thereof.
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`[0021]
`In the same forming method, since the step difference of the film material is relieved,
`the damage to the film material associated with the brush-cleaning is also well
`prevented, and at the same time, a film material having a gradient without increasing the
`manufacturing man-hours can be obtained.
`[0022]
`Embodiments of the Invenion
`[The first embodiment]
`Hereafter, the first embodiment in which the solid device with a pattern-formed film
`material according to the present invention is applied to the polysilicon-typed TFT
`active-matrix liquid crystal display will be described in detail based on FIG. 1 to FIG. 4.
`[0023]
`FIG. 1 shows a partial planar structure of the TFT array side substrate 11 of the solid
`device (liquid crystal display) in the present embodiment. Further, FIG. 2 (a) shows the
`cross-sectional structure taken along the line A-A of FIG. 1, and FIG. 2 (b) shows the
`cross-sectional structure similarly taken along the line B-B of FIG. 1, respectively.
`[0024]
`In the TFT array side substrate 11 shown in FIG. 1, the pixel electrode 12 of each of
`the display pixels constituting the liquid crystal display is pattern-formed in the vicinity
`of the intersection points of the drain wires DL connected to the drain driver and the
`gate lines GL connected to the gate driver. These pixel electrodes 12 are formed on
`approximately the entire surface of the TFT array side substrate 11 with a predetermined
`number of pixels in a matrix shape, but only a part of them is shown in FIG. 1.
`[0025]
`Further, the pixel electrodes 12 are made of the above-mentioned ITO, and are
`connected to the source electrodes (not shown) of the TFT via the contact holes 13.
`Further, the pixel electrodes 12 are, as shown in FIG. 2, formed on a transparent
`insulating substrate (glass substrate or the like) 11a constituting the TFT array side
`substrate 11.
`[0026]
`Here, in the liquid crystal display according to the present embodiment, as shown in
`FIG. 1, a dummy film 5 is provided (only a portion thereof is shown in FIG. 1), so as to
`surround continuously the periphery of the pixel electrodes 12 arranged in a matrix
`shape. Further, as shown in FIGs. 2 (a) and (b), the film thickness of this dummy film 5
`is formed to be thinner than the film thickness of the pixel electrodes 12. This dummy
`film 5 is provided to prevent the damage to the pixel electrode 12 by the brush
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`4a of the brush scrubber during cleaning the array side substrate 11 by using the brush
`scrubber (FIG. 12, FIG. 13).
`[0027]
`That is, in the present first embodiment, as shown in FIG. 3, when the brush 4a abuts
`against the pixel electrodes 12, this brush 4a first rides on the dummy film 5, and then
`rides on the pixel electrodes 12 when the step difference with the pixel electrodes 12 is
`reduced. Therefore, the damage to the pixel electrode 12 by the mechanical force of the
`rotating brush 4a is prevented.
`[0028]
`Incidentally, this dummy film 5 may be formed of ITO in the same manner as the
`pixel electrode 12, and may also be formed of other materials such as Al (aluminum), Cr
`(chromium) and the like.
`[0029]
`Next, the forming method of the dummy film 5 and the pixel electrode 12 will be
`described with reference to FIG. 4. When pattern-forming these film materials, first as
`shown in FIG. 4 (a), a thin film 5A serving as the dummy film 5 is formed on the
`transparent insulating substrate 11a. Next, a predetermined resist pattern 6 is formed as
`shown in FIG. 4 (b), followed by etching the thin film 5A as shown in FIG. 4 (c).
`Thereafter, by removing the resist pattern 6, a thin film dummy wiring 5 is formed on
`the transparent insulating substrate 11a.
`[0030]
`Then, as shown in FIG. 4 (d), an ITO film 12A serving as the pixel electrodes 12 is
`formed on the transparent insulating substrate 11a, and predetermined resist patterns 6a
`are formed thereon. Subsequently, when this formed ITO film 2A is etched, and the
`resist patterns 6a are removed, as shown in FIG. 4 (e), pixel electrodes 12 and a dummy
`film 5 are formed on the transparent insulating substrate 11a.
`[0031]
`As described above, according to the present first embodiment, the following effects
`can be obtained.
` (1) In the present first embodiment, a dummy film 5 is provided on the transparent
`insulating substrate 11a of the TFT array side substrate 11 of the liquid crystal display.
`Here, the dummy film 5 surrounds the periphery of the pixel electrodes 12 continuously,
`and is formed to have a film thickness thinner than the film thickness of the pixel
`electrodes 12. Therefore, even in the state of cleaning the substrate 11 by using a brush
`scrubber, when the brush 4a of the brush scrubber abuts against the pixel electrode 12,
`the brush 4a will not collide abruptly to the side face of the pixel electrode 12, but first
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`rides on the dummy film 5, and then rides on the pixel electrode 12 when the step
`difference of the pixel electrodes 12 is reduced. Therefore, the damage to the pixel
`electrode 12 by the mechanical force of the brush 4a is prevented, and consequently, the
`production yield of liquid crystal display is improved.
`[0032]
`Incidentally, the shape of the dummy film 5 described above is not limited to the
`shape continuously surrounding the periphery of the pixel electrode 12 as shown in FIG.
`1. In addition, for example, as shown in FIG. 5, it may be a shape that surrounds the
`periphery of the pixel electrode 12 as a set of the dummy films 5a having a shape cut
`corresponding to the shape of the pixel electrodes 12. The dummy films are provided to
`the same substrate end side with the pixel electrodes 12 on the transparent insulating
`substrate 11a so as to surround the periphery of the pixel electrodes 12, and may be
`formed to have a film thickness thinner than the film thickness of the pixel electrode 12.
`[0033]
`Further, the dummy film 5 may be formed of ITO in the same manner as the pixel
`electrodes 12 as described above, and may be formed of other materials such as Al
`(aluminum), Cr (chromium) and the like. When formed of ITO, the dummy film 5 can
`be pattern-formed collectively in the process of pattern-forming the pixel electrodes 12.
`In other words, a separate mask or the like for forming the dummy film 5 is not
`required, and it is possible to suppress the manufacturing man-hours and manufacturing
`cost. On the other hand, when forming the dummy film 5 of a material other than ITO,
`the degree of freedom in design of the dummy film 5 is enhanced.
`[The second embodiment]
`Next, the second embodiment in which the solid device with a pattern-formed film
`material according to the present invention is similarly applied to the polysilicon-typed
`TFT active-matrix liquid crystal display will be described in detail based on FIG. 6 to
`FIG. 9.
`[0034]
`FIG. 6 shows a partial planar structure of the TFT array side substrate 21 of the solid
`device (liquid crystal display) according to the present embodiment. FIG. 7 (a) shows
`the cross-sectional structure taken along the line C-C of FIG. 6, and FIG. 7 (b) shows
`the cross-sectional structure similarly taken along the line D-D of FIG. 6, respectively.
`[0035]
`Here, the difference with the first embodiment will be mainly described. The
`difference between the present second embodiment and the first embodiment is that, as
`shown in FIG. 6, dummy electrodes 22a, 22b double-surrounding the pixel electrodes
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`22 are provided as the dummy film surrounding the periphery of the pixel electrodes 22
`arranged in a matrix shape (only a portion thereof is shown in FIG. 6). Further, the
`planner shape of these dummy electrodes 22a, 22b are formed to be the same as the
`pixel electrodes 22, at the same time, the film thicknesses thereof are formed to be
`thinner than the film thickness of pixel electrodes 22. Furthermore, as shown in FIGs. 7
`(a), (b), the surfaces of the dummy electrodes 22a, 22b are formed to have a gradient
`that their film thickness becomes thinner from the pixel electrodes 22 toward the array
`side substrate 21 end portion, in other words, from the right side toward the left side in
`FIGs. 7 (a) and (b). Incidentally, the dummy electrodes 22a, 22b are formed of ITO in
`the same manner as the pixel electrodes 22.
`[0036]
`Therefore, in the present second embodiment, during the cleaning of the substrate 21
`using the brush scrubber as described above, as shown in FIG. 8, this brush 4a rides on
`the pixel electrode 22 along the inclinations of the surfaces of the dummy electrode 22b
`from the dummy electrode 22a. Therefore, by the present second embodiment, the
`damage to the pixel electrodes 22 by the mechanical force of the rotating brush 4a is
`well prevented.
`[0037]
`Next, the forming method of the dummy wirings 22a, 22b and the pixel electrodes 22
`will be described with reference to FIG. 9. When pattern-forming these film materials,
`first as shown in FIG. 4 (a), an ITO film 22A serving as the dummy electrodes 22a, 22b
`and pixel electrodes 22 is formed on the transparent insulating substrate 21a. Next, as
`shown in FIG. 9 (b), the surface of the ITO film 22A is etched, so that the film thickness
`of the ITO film 22A formed at the end portion of the transparent insulating substrate 21a
`becomes thinner gradually with respect to the ITO film 22A formed in the center
`thereof.
`[0038]
`As the etching method, for example, in dry etching method using plasma, a method in
`which the reaction pressure is higher than normal pressure (about 18 mTorr) and is for
`example 20 mTorr, is effective. That is, here, when the plasma reaction pressure
`pertaining to the etching described above is increased, an etching in which the substrate
`end is deeper, so to speak, an unbalanced etching is positively used.
`[0039]
`Subsequently, as shown in FIG. 9 (c), a predetermined resist pattern 6b is formed on
`the etched ITO film 22A. Then, when the ITO film 22A is etched and the resist patterns
`6a are removed, as shown in FIG. 9 (d), pixel electrodes 22 and dummy electrodes 22a,
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`22b are formed on the transparent insulating substrate 21a.
`[0040]
`As described above, according to the present second embodiment, the following
`effects can be obtained.
` (1) In the present second embodiment, the film thicknesses of the dummy electrodes
`22a, 22b are formed to become thinner toward the outer side of the transparent
`insulating substrate 21a. Therefore, in the state where the substrate 21a is cleaned by
`using a brush scrubber or the like, when the brush 4a of the brush scrubber abuts against
`the pixel electrode 22, the brush 4a rides on the pixel electrode 22 suitably. Therefore,
`the damage to the pixel electrodes 22 by the mechanical force of the rotating brush 4a of
`the brush scrubber is well prevented.
`[0041]
` (2) In the present second embodiment, the dummy electrodes 22a, 22b are
`pattern-formed of ITO of the same quality as the pixel electrodes 22. Therefore, in the
`process of pattern-forming the pixel electrodes 22, the dummy electrodes 22a, 22b can
`be pattern-formed collectively. In other words, a separate mask or the like for forming
`the dummy electrodes 22a, 22b is not required, and it is possible to suppress the
`manufacturing man-hours and manufacturing cost.
`[0042]
` (3) In the present second embodiment, the inclinations of the surfaces of the dummy
`electrodes 22a, 22b were formed by increasing the plasma reaction pressure positively
`in the etching process of ITO which also includes the formation of the pixel electrodes
`22. That is, the inclinations of the surfaces of these dummy electrodes 22a, 22b can be
`formed without adding any separate process.
`[0043]
`It should be noted that the second embodiment described above can be implemented
`by changing the configuration thereof as described below.
`･ In the second embodiment described above, an example of forming the dummy
`electrodes 22a, 22b having a gradient in their thickness so as to double-surround the
`periphery of the pixel electrodes 22 as the dummy film of the pixel electrode 22 has
`been shown, however, it is not limited thereto. The dummy electrodes having gradient in
`the film thickness may be formed to single-surround the periphery of the pixel
`electrodes 22.
`[0044]
`･ In the second embodiment described above, an example of forming the dummy
`electrodes 22a, 22b having the same planar shape with the pixel electrodes 22 as the
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`dummy film of the pixel electrodes 22 has been shown, however, it is not limited
`thereto. In addition, for example, the planar shapes of the thin film dummy wirings 22a,
`22b may be planar shapes having an area of two pixels, or may be planar shapes having
`an area of three pixels, four pixels. Conversely, it may be a shape where the area is
`smaller than the area of one pixel. In short, the size is not necessary to be the same as
`the pixel electrode 22. Further, the materials of the dummy electrodes 22a, 22b
`including the pixel electrodes 22 are not necessary to be ITO, and structurally, these
`pixel electrodes 22 and dummy electrodes 22a, 22b are not necessary to be the same
`material.
`[0045]
`In addition, in each of the above embodiments including the first embodiment, all the
`film materials (dummy film 5 or dummy electrodes 22a, 22b) formed as the dummy
`films are illustrated for the case where the film thickness is thinner than the pixel
`electrodes (12, 22), but they are not limited thereto. That is, if it is possible to protect
`the pixel electrode from the damage associated with cleaning by the brush thereof, the
`dummy film itself may be damaged. For example, the dummy film may have the same
`film thickness as the pixel electrode. The film thickness is not necessary to be thinner
`than the pixel electrode. Also, particularly when the dummy film is formed of a metal
`film (such as Al) and has good adhesion with the base, the film thickness is not
`necessary to be thinner than the pixel electrode.
`[0046]
`Moreover, a gradient as the dummy electrodes 22a, 22b shown in the second
`embodiment may also be provided in the dummy film 5 of the first embodiment.
`Further, instead of providing a gradient in these dummy film 5 and dummy electrodes
`22a, 22b, the film thickness thereof may be formed to become successively thinner
`stepwise toward the device periphery. Incidentally, the mode in which the film thickness
`becomes successively thinner stepwise may be one made to have a step shape by a
`plurality of dummy films, and also may be one made to have a step shape even on a
`single dummy film.
`[0047]
`Although an example of forming a film material which is pattern-formed on the
`outermost periphery of the solid device as a dummy film (the dummy film 5 or the
`dummy electrode 22a) has been shown in each of the embodiments described above, it
`is not limited thereto. The film material may be one that is formed not as the dummy
`film, but as others for example electrode and the like.
`[0048]
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`Although an example of applying the solid device with a pattern-formed film material
`of the present invention to the polysilicon-typed TFT active-matrix liquid crystal display
`has been shown in each of the embodiments described above, it is not limited thereto. In
`addition, for example, the solid device may be applied to an amorphous silicon-typed
`TFT active-matrix liquid crystal display, and may be applied to a passive matrix liquid
`crystal display. Furthermore, without limitation to the liquid crystal display, the present
`invention can be applied similarly to those having thin-film electrodes pattern-formed
`on the substrate such as solar cell or the like. And furthermore, without limitation to
`those having the pattern-formed thin-film electrodes, even in a semiconductor device
`such as LSI, the present invention can also be applied similarly as long as it is a solid
`device which is subjected to cleaning with the brush scrubber or the like described
`above in a state where an electrode and other film material are pattern-formed on the
`substrate surface.
`[0049]
`Effects of the Invention
`According to the invention of claim 1, when the solid device is brush-cleaned by
`using a brush scrubber or the like, the brush of the brush scrubber first abuts against the
`dummy film before abutting against the pattern-formed film material. Therefore, the
`damage to the film material by the mechanical force of the rotating brush of the brush
`scrubber is prevented.
`[0050]
`According to the invention of claim 2, similarly to the case of brush-cleaning, the
`brush of the brush scrubber first reduces the riding step difference of the pattern-formed
`dummy film which is thinner than the film thickness of the film material, so as to ride
`on the film material. Therefore, the damage to the film material by the mechanical force
`of the rotating brush of the brush scrubber is well prevented. According to the invention
`of claim 3, similarly to the case of brush-cleaning, the brush of the brush scrubber rides
`on the film material suitably along the gradient or the step of the dummy film.
`Therefore, the damage to the film material by the mechanical force of the brush of the
`rotating brush scrubber is well prevented.
`[0051]
`According to the invention of claim 4, the manufacturing process of the dummy film
`is simplified. According to the invention of claim 5, the degree of freedom in design of
`the dummy film is enhanced. According to the invention of claim 6, in the liquid crystal
`display, the damage to the pixel transparent electrode associated with the brush-cleaning
`of the transparent insulating substrate surface is well prevented.
`
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`[0052]
`According to the invention of claim 7, since the step difference of the film material is
`relieved, the damage to the film material associated with the brush-cleaning is also well
`prevented. According to the invention of claim 8, since the step difference of the film
`material is relieved, the damage to the film material associated with the brush-cleaning
`is also well prevented, and at the same time, a film material having a gradient without
`increasing the manufacturing man-hours can be obtained.
`BRIEF DESCRIPTION OF THE DRAWINGS
`FIG. 1 is a partial plan view showing the first embodiment of the solid device
`according to the present invention.
`FIG. 2 shows partial cross-sectional views taken along line A-A and line B-B of FIG.
`1.
`
`FIG. 3 is a partial cross-sectional view showing a cleaning mode with respect to the
`solid device of the first embodiment.
`FIG. 4 is a cross-sectional view showing the manufacturing procedure of the solid
`device of the first embodiment.
`FIG. 5 is a partial plan view showing another mode of implementation of the first
`embodiment.
`FIG. 6 is a partial plan view showing the second embodiment of the solid device
`according to the present invention.
`FIG. 7 is a partial cross-sectional view taken along line C-C and line D-D of FIG. 6.
`FIG. 8 is a partial cross-sectional view showing a cleaning mode with respect to a
`solid device of the second embodiment.
`FIG. 9 is a cross-sectional view showing the manufacturing procedure of the solid
`device of the second embodiment.
`FIG. 10 is a partial plan view showing a planar structure of a conventional solid
`device (liquid crystal display).
`FIG. 11 is a partial cross-sectional view taken along line X-X of FIG. 10.
`FIG. 12 is a plan view showing a substrate cleaning mode by a brush scrubber.
`FIG. 13 is a partial cross-sectional view showing a cleaning mode with respect to a
`conventional solid device.
`EXPLANATION OF REFERENCE SYMBOLS
`4a…brush of the brush scrubber, 5…dummy film, 6, 6a, 6b…resist film, 11,
`21…TFT array side substrate