Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 1 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 1 of 108
`
`EXHIBIT 18
`EXHIBIT 18
`
`

`

`Electronic Version v1.1
`Stylesheet Version v1.2
`
`EPAS ID: PAT4738219
`
`SUBMISSION TYPE:
`
`NEW ASSIGNMENT
`
`NATURE OF CONVEYANCE:
`
`ASSIGNMENT
`
`CONVEYING PARTY DATA
`
`nsocaa
`804891498. 12/17/2047,
`4.
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 2 of 108
`PATENT ASSIGNMENT COVER SHEET
`
`[PropertyTypeCNmber
`
`AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
`
`BROADCOM CORPORATION
`
`12/08/2017
`
`12/08/2017
`
`RECEIVING PARTY DATA
`
`
`
`Name:«(BELLSEWIGONDUGTORUGSSS
`
`PROPERTY NUMBERS Total: 1204
`
`504691498
`
`PATENT
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`

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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 3 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 4 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 5 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 7 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 8 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 9 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 10 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 11 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 12 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 13 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 14 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 15 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 16 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 17 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 18 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 19 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 20 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 21 of 108
`[PropertyType](Number
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 22 of 108
`[PropertyType](Number
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 23 of 108
`[PropertyType](Number
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 24 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 25 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 26 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 27 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 28 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 29 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 30 of 108
`[PropertyType]Number
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 31 of 108
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 32 of 108
`[ProperType|(Number
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`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 33 of 108
`[PropertyType|(Number
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`

`) ) ) ) ) ) ) ) ) ) P
`
`Total Attachments: 72
`source=Exhibit B(1) to Patent Assignment Agreement - Executed#page'1 .tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page2.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page3.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page4.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page5.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page6.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page7.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page8g.tif
`source=Exhibit B(1)
`to Patent Assignment Agreement - Executed#page9.tif
`source=Schedule B(1)(a) Semic Processing A#page 1.tif
`source=Schedule B(1)(a) Semic Processing A#pagez.tif
`source=Schedule B(1)(a) Semic Processing A#page3.tif
`source=Schedule B(1)(a) Semic Processing A#page4.tif
`source=Schedule B(1)(a) Semic Processing A#page5.tif
`source=Schedule B(1)(a) Semic Processing A#pageé.tif
`source=Schedule B(1)(a) Semic Processing A#page’7.tif
`source=Schedule B(1)(a) Semic Processing A#pages.tif
`source=Schedule B(1)(a) Semic Processing A#page9.tif
`source=Schedule B(1)(a) Semic Processing A#page10.tif
`source=Schedule B(1)(a) Semic Processing A#page’1 1.tif
`
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 34 of 108
`[ProperyType|(Number
`Application Number:
`
`Application Number:
`
`Application Number:
`
`Application Number:
`
`Application Number:
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`Application Number:
`
`Application Number:
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`Application Number:
`
`CORRESPONDENCE DATA
`
`Fax Number:
`Correspondencewill be sent to the e-mail addressfirst; if that is unsuccessful, it will be sent
`using a fax number,if provided; if that is unsuccessful, it will be sent via US Mail.
`Phone:
`(312) 690-3701
`Email:
`chilyard@hilcoglobal.com
`Correspondent Name:
`CHAD S. HILYARD
`AddressLine1:
`401 N. MICHIGAN AVE.
`
`ATENT
`REEL: 044886 FRAME: 0033
`
`AddressLine 2:
`
`AddressLine 4:
`
`SUITE 1600
`
`CHICAGO, ILLINOIS 60611
`
`NAME OF SUBMITTER:
`
`JOSHUA GAMMON
`
`SIGNATURE:
`
`DATE SIGNED:
`
`//Joshua Gammon//
`
`12/17/2017
`
`, , , , , , , , , , ,
`
`

`

`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 35 of 108
`source=Schedule
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`source=Schedule B
`
`PATENT
`REEL: 044886 FRAME: 0034
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 36 of 108
`source=Schedule
`) Semnic Processing A#page6o.tif
`source=Schedule B
`Semic Processing A#page61 .tif
`source=Schedule B
`Semic Processing A#page62.tif
`
`source=Schedule B
`
`PATENT
`REEL: 044886 FRAME: 0035
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 37 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 37 of 108
`
`EXHIBIT BO)
`
`ASSIGNMENT
`
`is made by and between Avago
`THIS ASSIGNMENT (“Assignment”)
`Technologies General IP (Singapore) Pte. Ltd. (Company Registration No. 200512430D),
`a Singapore company having an office at No.
`1 Yishun Avenue 7, Singapore 768923
`("Avago") on behalf of itself and as
`representative and agent
`for
`its affiliates
`(collectively, "Affiliates") and Broadcom Corporation (and together with Avago and
`Affiliates, “Assignors” and each an “Assignor") and Bell Semiconductor, LLC, a
`Delaware limited liability company, having its principal place of business at 401 North
`Michigan Avenue, Chicago,Illinois 60611 (“Assignee”).
`
`WHEREAS,each of the Assignors owns, right, title and interest in, to and under
`one or more of the Patents listed in the Attachments hereto (the “PATENTS”;
`
`WHEREAS,each of the Assignors has agreedto assign all ofits rights, title, and
`interest in, to and underall of Patents it owns from the PATENTSlisted in Schedules
`BC \(a)-(e) to Assignee.
`
`NOW, THEREFORE,for other good and valuable consideration, the receipt of
`whichis hereby acknowledged:
`
`Effective on November 30, 2017, each of the Assignors agrees to sell, assign,
`transfer and set over, and hereby sells, assigns, transfers, and sets over to Assignee,
`Assignor’s entire right, title, and interest in, to, and under the PATENTS, andall patents,
`patent
`applications,
`foreign patents,
`foreign patent
`applications,
`continuations,
`continuations~in-part, divisionals, extensions,
`renewals,
`reissues and re-examination
`certificates that may issue thereon and claim priority to the PATENTS,including without
`limitation, all rights to claim priority on the basis thereof, all rights to sue for past,
`present and future infringement, including the right to collect and receive any damages,
`royalties, or settlements for the infringements, all rights to sue for injunctive or other
`equitable relief, and any and all causes of action relating to any of the inventions or
`discoveries thereof.
`
`PATENT
`REEL: 044886 FRAME: 0036
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 38 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 38 of 108
`
`be executed byits duty authorized officer, representative, or agent ss¢ af die 8° day©ar
`
`EN WITNESS WHEREOF, cack of the Assignors hus caused this Asgaigmnentt
`
`
`
`Derember, 201.
`
`iF
`
`iyeneral
`
`Technologies
`Avage
`{Singapore} Pte, Lid.
`
`
`Signature:
`
`Name:_feyhs
`Fes
`
`inaneAY
`idste:
`
`Te.Tesh
`ex
`re Sine
`
`
`Date:~December R201" seawennneeeennn
`
`Browdcont Corpuration mgnans: .
`
`ACCEPTED AND AGREEDby:
`
`Bell Semiconductor, LLC
`
`SaQanaTeS
`Nig:
`Prd:
`
`Daig:
`
`PATENT
`REEL: 044886 FRAME: 0037
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 39 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 39 of 108
`
`Stateof_
`
`Countyof
`
`Cn
`)
`, 2017, before me appeared
`Onthis _—_—s_ dayof
`, tome personallyknown who, being duly sworn, did
`depose and saythat he is the
`ofthe Assignor and the
`agent of cach of the Affiliates narmed in and which executed the foregoing
`instrument; and that said instrument was signed on behalf of said Assignor and
`each of the Affiliates; and_said person acknowledged said instrument to be the
`free and authorized act-<ind deed of said Assignor and each of the Affiliates.
`
`
`
`Notary Public
`My Commission Expires:
`
`< Otabed
`
`PATENT
`REEL: 044886 FRAME: 0038
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 40 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 40 of 108
`
`CALIFORNIA ALL-PURPOSE ACKNOWLEDGMENT
`
`CIVIL CODE § 1189
`
`A notary public or other officer completing this certificate verifies only the identity of the individual who signed the
`
`State of California
`
`
`)
`
`;
`
`document to which this certificate is attached, and not the truthfulness, accuracy, or validity of that decument.
`Countyof OYReap:
`}
`on DAame
`201 before me, anessa E fend f NPray WN Ie
`personally appeared
`\ eu Ou YalaNALAZ.
`.
`
`
`
`Date Here insert Name andTitleofthe Officer
`
`Namp(6 of Signerey
`
`
`
`personis)" whose namo{Gare
`scribed to the within instrument and ackno geged to me that 4 seesey executed thé
`samein
`who proved to me on the basis of satisfactory evidence to be the
`
`
`
`is/her/their authorized capacity(ies), and that
`her/their signature 8) on the instrument the person(s},
`the person(s) xcted, executed the instrument.
`or the entity upon behalf of which
`| certify under PENALTY OF PERJURY under the laws
`of the State of California that the foregoing paragraph
`is true and correct.
`
`
`
`VANESSA LYNN ELFEND
`
`
`Commission # 2078868
`
`
`Notary Public - California
`
`Orange County
`
`My Comm. Expires Aug 21, 2018 E
`
`
`
`;
`
`
`
` Signature of Notary Public
`}
`
`
`Place Notary Seal Above
`
`OPTIONAL
`Though this section is optional, completing this information can deter alteration of the document or
`fraudulent reattachment of this form to an unintended document.
`
`Description of Attached Document
`
`Alt
`Document Date: 2° $- 2017
`
`{
`Title or Type of Document:
`Signer(s) Othe Than Named Above:
`
`Number of Pages:
`Capacity(ies) Claimed by Signer(s)
`Signer’s Name:
`Signer’s Name:
`{_] Corporate Officer — Title(s):
`(3 Corporate Officer — Title(s):
`i] Partner — [J] Limited
`©) General
`Cl Partner — [Limited
`[7] General
`__] Individual
`[4 Attorney in Fact
`[) Individual
`| Attorney in Fact
`(| Trustee
`("] Guardian or Conservator
`{"] Trustee
`i] Guardian or Conservator
`i] Other:
`i] Other:
`
`Signer Is Representing: Signer Is Representing:
`
`©2014 National Notary Association « www.NationalNotary.org * 1-800-US NOTARY (1-"800-8876.6.6827) tem:45907
`
`BECERRACENCECOCR PRGA RERRERGN
`
`2
`
`3
`
`z
`
`a
`
`ROH
`
`PATENT
`REEL: 044886 FRAME: 0039
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 41 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 41 of 108
`
`SCHEDULE B(1\(a)
`
`See attached listing of patents and patent applications for Schedule B(1)(a) on the pages
`that follow.
`
`PATENT
`REEL: 044886 FRAME: 0040
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 42 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 42 of 108
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`SCHEDULE B(1)(b)
`
`See attached listing of patents and patent applications for Schedule B(1)(b) on the pages
`that follow.
`
`PATENT
`REEL: 044886 FRAME: 0041
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 43 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 43 of 108
`
`SCHEDULE BQ )(c
`
`See attached listing of patents and patent applications for Schedule B(1)(c) on the pages
`that follow.
`
`PATENT
`REEL: 044886 FRAME: 0042
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 44 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 44 of 108
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`SCHEDULE BO)(d
`
`See attached listing of patents and patent applications for Schedule B(1)(d) on the pages
`that follow.
`
`PATENT
`REEL: 044886 FRAME: 0043
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 45 of 108
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 45 of 108
`
`SCHEDULE Bie
`
`See attached listing of patents and patent applications for Schedule B(1)(e) on the pages
`that follow.
`
`PATENT
`REEL: 044886 FRAME: 0044
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 46 of 108
`22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 46 of 108
`Case 1
`
`
`
`
`
`62394911998-05-18|2001-05-29
`
`
`
`oases1998-11-23
`
`
`
`59267201997-09-08
`
`Expired
`
`Expired
`
`UnitedStatesofAmerica
`
`
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`substrateandresultingproduct
`
`
`
`makingsame
`
`
`
`anintegratedcircuit
`
`
`
`OfAnIntegratedCircuit
`
`shadowing
`
`shadowing
`
`feedback
`
`
`
`
`
`Apparatusforrapidthermalprocessingofawafer
`
`adhesiontometal
`
`
`
`
`
`CrystalSiliconSubstrate
`
`
`
`
`
`crystalsiliconsubstrate
`
`
`
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`Laserfaultcorrectionofsemiconductordevices
`
`
`
`
`
`lines
`
`
`
`
`
`
`
`
`
`08879100ExpiredUnitedStatesofAmerica08566161Abandoned|UnitedStatesofAmericaExpiredUnited08823829StatesofAmerica 09790821GrantedUnitedStatesofAmerica09081403UnitedStatesofAmerica09583297Abandoned|UnitedStatesofAmerica09022588GrantedUnitedStatesofAmerica08957692UnitedStatesofAmerica09363084Abandoned|UnitedStatesofAmerica091982082001-05-29|ExpiredUnitedStatesofAmerica089249021999-07-20UnitedStatesofAmerica08678718ExpiredUnitedStatesofAmerica 0910554659737671998-06-26StatesofAmerica 092163951998-12-18Abandoned|UnitedStatesofAmerica0893968958881201997-09-29|1999-03-30Expired=|UnedStatesofAmerica|1999-10-26ewored|United
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`
`08374193Expired
`
`
`64860562001-02-22|2002-11-26
`
`
`
`
`
`betweenatleastlocalinterconnectlevelandfirstmetalinterconnectlevel
`
`
`
`
`Useofcorrosioninhibitingcompoundsinpost-etchcleaningprocessesof
`
`
`
`
`ConsistentalignmentmarkprofilesonsemiconductorwafersusingPVD
`
`
`
`
`ConsistentalignmentmarkprofilesonsemiconductorwafersusingPVD
`
`
`
`
`
`Off-AxisIlluminatorLensMaskForPhotolithographicProjectionSystem
`
`
`
`Polymericlayershavingimproveddielectriclowdielectricconstantsand
`
`
`
`
`
`
`
`UseOfCorrosionInhibitingCompoundsInPost-EtchCleaningProcesses
`
`
`
`NitrogenImplantedPolysiliconGateForMosfetGateOxideHardening
`
`
`
`
`
`
`Processforselectivedepositionofpolysiliconoversinglecrystalsilicon
`
`
`Off-axisilluminatorlensmaskforphotolithographicprojectionsystem
`
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`
`
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`
`
`ProductResultingFromSelectiveDepositionOfPolysiliconOverSingle
`
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`
`NitrogenimplantedpolysilicongateforMOSFETgateoxidehardening
`
`
`
`
`
`interconnectlevelandfirstmetalinterconnectlevel,andprocessfor
`
`
`
`
`Integratedcircuitstructurewiththindielectricbetweenatleastlocal
`
`
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`
`
`Productresultingfromselectivedepositionofpolysiliconoversingle
`
`
`
`
`
`Rapidthermalprocessingusinganarrowbandinfraredsourceand
`
`
`
`Processformakingintegratedcircuitstructurewiththindielectric
`
`
`
`MethodandApparatusforChemicalMechanicalPolishing
`
`Methodandapparatusforchemicalmechanicalpolishing
`
`
`
`
`Methodofformingalayerandsemiconductorsubstrate
`
`
`
`
`
`
`
`Laserfaultcorrectionofsemiconductordevices
`
`PATENT
`044886 FRAME 0045
`
`REEL
`
`

`

`trench
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`09188929—1998-11-09|Abandoned|UnitedStatesofAmericaExpired0872314059557621996-10-01|1999-09-21[UnitedStatesofAmerica0859502158698691996-01-31|1999-02-09|ExpiredUnitedStatesofAmerica08936829ExpiredUnitedStatesofAmericaExpiredUnited08748372StatesofAmerica 0953465262582052000-03-24|2001-07-10|GrantedUnitedStatesofAmerica0910933160718181998-06-30StatesofAmerica0924432761540391999-02-03|2000-11-28Expired[UnitedStatesofAmericaExpired0870147659053811996-08-22|1999-05-18[UnitedStatesofAmerica0959447863006632000-06-15|2001-10-09expreslunesStatesofAmerica0879124461177361997-01-30{2000-09-12cipceaUnitedStatesofAmerica|Expired0884194759900101997-04-08|1999-11-23[UnitedStatesofAmerica0936264862737981999-07-27|2001-08-14Expired[UnitedStatesofAmerica0961821164559342000-07-10|2002-09-24ewes|UnitedStatesofAmerica|2000-06-06cranes|United
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`0887380958952611997-06-12|1999-04-20|Expired
`
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`
`0855246156704251995-11-09|1997-09-23|Expired
`
`
`
`
`0869059258775301996-07-31|1999-03-02|Expired
`
`08684022Expired
`57286121996-07-19|1998-03-17
`
`
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`UnitedStatesofAmerica
`
`
`
`
`
`
`circuitstructureusingare-entrantgateelectrodeandahigherdosedrain
`
`
`
`
`
`protectioninintegratedcircuitstructureswithoutextraimplantandmask
`
`
`
`
`
`\/OdriverdesignforsimultaneousswitchingnoiseminimizationandESD
`
`
`
`
`
`
`Methodforformingminimumareastructuresforsub-micronCMOSESD
`
`
`
`
`
`
`Formationofgradientdopedprofileregionbetweenchannelregionand
`
`
`
`
`
`
`Insulated-gatefield-effecttransistorshavingdifferentgatecapacitances
`
`
`
`
`
`
`Polymericdielectriclayershavinglowdielectricconstantsandimproved
`
`
`
`Microelectronicdevicewiththinfilmelectrostaticdischargeprotection
`
`
`
`
`
`heavilydopedsource/draincontactregionofMOSdeviceinintegrated
`
`
`FormationOfGradientDopedProfileRegionBetweenChannelRegion
`
`
`
`
`
`
`
`MethodoffabricatingamicroelectronicpackagehavingpolymerESD
`
`
`
`IntegratedCircuitStructureUsingARe-EntrantGateElectrodeAndA
`
`
`
`
`Endpointdetectionmethodandapparatuswhichutilizeanendpoint
`
`
`
`
`Endpointdetectionmethodandapparatuswhichutilizeanendpoint
`
`
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`Processformakingintegratedcircuitstructurecomprisinglocalarea
`
`
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`
`Processformakingintegratedcircuitstructurecomprisinglocalarea
`
`
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`
`
`AndHeavilyDopedSource/DrainContactRegionOfMOSDeviceIn
`
`
`
`
`Methodoffabricatinginsulated-gatefield-effecttransistorshaving
`
`
`
`
`Pre-conditioningpolishingpadsforchemical-mechanicalpolishing
`
`
`
`
`Pre-conditioningpolishingpadsforchemical-mechanicalpolishing
`interconnectsformedoversemiconductorsubstratebyselective
`
`
`
`
`interconnectsformedoversemiconductorsubstratebyselective
`
`
`
`
`
`
`depositiononseedlayerinpatternedtrench
`
`depositiononseedlayerinpatterned
`
`
`steps,andarticlesformedthereby
`
`
`
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 47 of 108
`22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 47 of 108
`Case 1
`
`
`
`
`
`59703211997-09-25|1999-10-19
`
`
`
`
`
`58438131996-11-13|1998-12-01
`
`UnitedStatesofAmerica
`
`implantation
`
`
`
`HigherDoseDrainImplantation
`
`structure
`
`protection
`
`
`
`performanceenhancement
`
`
`
`
`
`MicroelectronicpackagewithpolymerESDprotection
`
`
`
`
`
`polishinglayerofcatalystmaterial
`
`
`
`
`
`polishinglayerofcatalystmaterial
`
`
`
`
`
`FunctionalOBICanalysis
`
`
`
`
`
`FunctionalOBICanalysis
`
`
`
`
`
`differentgatecapacitances
`
`
`
`adhesiontometallines
`
`PATENT
`044886 FRAME 0046
`
`REEL
`
`

`

`10418375
`
`capacitance
`
`capacitance
`
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 48 of 108
`22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 48 of 108
`Case 1
`
`DamageinaRFAher
`
`
`160578890}2004-06-10|Abandoned|UnitedStatesofAmerica
`
`
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`
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`
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`
`
`|LapsedUnited|2006-01-03StatesofAmerica 08454542UnitedStatesofAmerica 0871885258277771996-09-24|1998-10-27ewes|UnitedStatesofAmericascans|2003-04-18
`
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`603844991900-01-01Abandoned|UnitedStatesofAmerica
`
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`
`1019577566732002002-07-12StatesofAmerica1002530467133862001-12-19StatesofAmerica1075034869696832003-12-31StatesofAmerica 1032728368671272002-12-19StatesofAmerica1101646869987162004-12-16StatesofAmerica1003950868413082001-11-09|2005-01-11StatesofAmerica1097289870672232004-10-25[2006-06-27|Lapsed[UnitedStatesofAmerica[UnitedStatesofAmerica[UnitedStatesofAmerica1106338472016332005-02-22|2007-04-10StatesofAmerica11098290hizasie__froos.oaoe|aoosso-lapses|UnitedGranted|United11158450|d2005-06-21|[Abandoned11381409|«2006-05-03|==[AbandonedLapsed=|United|2006-02-14cranee|United|2005-03-15cranee|United|2005-11-29cranee|United|2004-03-30cramee|United|2004-01-06cramee|United StatesofAmerica 12912791UnitedStatesofAmerica11286558UnitedStatesofAmerica
`
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`
`eames|2005-11-23rors|2010-10-27|2011-09-13|Granted|2010-12-07|Granted
`
`
`
`
`
`56441431995-05-30[1997-07-01|Expired
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`
`
`
`Methodofreducingprocessplasmadamageusingopticalspectroscopy
`
`
`Methodforprotectingasemiconductordevicewithasuperconductive
`
`
`
`
`lonrecoilimplantationandenhancedcarriermobilityinCMOSdevice
`
`
`
`
`lonrecoilimplantationandenhancedcarriermobilityinCMOSdevice
`
`
`
`
`EFFICIENTPOWERMANAGEMENTMETHODININTEGRATEDCIRCUIT
`
`
`
`
`Methodofpreventingresistpoisoningindualdamascenestructures
`
`
`
`
`Methodofpreventingresistpoisoningindualdamascenestructures
`
`
`
`Methodofmakingabarriermetaltechnologyfortungstenplug
`
`
`
`CONFIGURABLEPOWERSEGMENTATIONUSINGANANOTUBE
`
`
`
`Diamondmetal-filledpatternsachievinglowparasiticcoupling
`
`
`
`
`
`
`
`Diamondmetal-filledpatternsachievinglowparasiticcoupling
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
`
`
`
`
`
`
`
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
`
`
`
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
`
`
`Barriermetaltechnologyfortungstenpluginterconnection
`
`ImpactofFSpeciesonPlasmaCharge
`
`
`
`VortexPhaseShiftMaskAppliedtoOpticalDirectWrite
`
`
`
`UseOfReticleStitchingToProvideDesignFlexibility
`
`
`
`Useofreticlestitchingtoprovidedesignflexibility
`
`
`
`
`Techniquesformingsuperconductiveforlines
`
`SystemsandMethodsForWaferPolishing
`
`
`AdjustableTransmissionPhaseShiftMask
`
`
`Systemsandmethodsforwaferpolishing
`
`
`
`Adjustabletransmissionphaseshiftmask
`
`
`
`Adjustabletransmissionphaseshiftmask
`
`THROUGHANANOTUBESTRUCTURE
`
`
`Processindependentalignmentmarks
`
`
`Processindependentalignmentmarks
`
`line
`
`STRUCTURE
`
`interconnection
`
`PATENT
`044886 FRAME 0047
`
`REEL
`
`

`

`Circuit
`
`
`
`
`
`
`
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`
`090935571999-10-05|ExpiredUnitedStatesofAmerica09156719UnitedStatesofAmerica 0933814362557141999-06-22StatesofAmerica0988678066494222001-06-21StatesofAmerica 0916406966140971998-09-30StatesofAmerica 0995117865253582001-09-13|2003-02-25cranee|UnitedStatesofAmerica|2003-09-02apse|United|2003-11-18cranee|United|2001-07-03cranee|United
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`
`57633141996-03-22|1998-06-09|Expired[UnitedStatesofAmerica64450431994-11-30StatesofAmerica59491281998-03-30StatesofAmerica57733381995-11-21StatesofAmerica60543421999-06-23|2000-04-25|Granted[UnitedStatesofAmerica59491121998-05-28|1999-09-07|Granted[UnitedStatesofAmerica72534972003-07-02|2007-08-07|GrantedUnitedStatesofAmerica118115192008-06-10|GrantedUnitedStatesofAmerica 1154286473327752006-10-04|2008-02-19Granted[UnitedStatesofAmerica1023435471261982002-09-03|2006-10-24Lapsed[UnitedStatesofAmerica 1169402174560612007-03-30|2008-11-25StatesofAmerica[UnitedStatesofAmerica1045907268061622003-06-11StatesofAmerica 1068050369728402003-10-06|2005-12-06lapsed|UnitedStatesofAmerica|2004-10-19apse|United12256677|«2008-10-23|ss[AbandonedGranted|United|1998-06-30ciprea|United|1999-09-07ciprea|United|2002-09-03cranee|United
`
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`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`ArticleComprisingAnOxideLayerOnAGaAs-BasedSemiconductorBody,
`
`
`
`
`
`Methodforcomposingadielectriclayerwithinaninterconnectstructure
`
`
`
`Methodforcomposingadielectriclayerwithinaninterconnectstructure
`
`
`
`
`
`CapacitorHavingTheLowerElectrodeForPreventingUndesiredDefects
`
`
`
`
`
`
`Methodofreducingprocessplasmadamageusingopticalspectroscopy
`
`
`
`AnIntegratedCircuitHavingAMicromagneticDeviceAndMethodOf
`
`
`
`
`BipolarTransistorWithMOS-ControlledProtectionForReverse-Biased
`
`
`MethodOfMakingAnArticleComprisingAnOxideLayerOnAGaAs-
`
`
`
`
`
`
`Integratedhavingmagneticcircuitwithinductorhorizontalfluxlines
`
`
`
`
`
`
`Integratedcircuitwithinductorhavinghorizontalmagneticfluxlines
`
`
`
`IntegratedCircuitHavingAMicromagneticDeviceAndMethodOf
`
`
`
`ProcessforFormingIsolationRegionsinAnIntegratedCircuitand
`
`
`
`
`IntegratedCircuitCapacitorAndAssociatedFabricationMethods
`
`
`
`ProcessForFormingIsolationRegionsInAnIntegrated
`
`
`
`
`MethodToReduceBoronPenetrationInSiGeBipolarDevice
`
`
`
`
`MethodToReduceBoronPenetrationInSiGeBipolarDevice
`
`
`
`BipolarMOS\(miControlledTransistorWithProtectionFor
`
`
`
`MethodOfMakingIntegratedCircuitsWithTub-Ties
`
`
`High-KDielectricGateMaterialUniquelyFormed
`
`
`
`High-Kdielectricgatematerialuniquelyformed
`
`MOSTransistorAndMethodOfManufacture
`
`
`
`
`
`
`
`ProtrudingSpacersForSelf-AlignedContacts
`
`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 49 of 108
`22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 49 of 108
`Case 1
`
`08620964
`
`08347527
`
`09050711
`
`08562235
`
`09339306
`
`09085913
`
`10614307
`
`64954071998-09-18
`
`
`2002-12-17|Granted
`
`
`
`
`
`BasedSemiconductorBody
`
`
`
`73848012007-06-11
`
`
`
`59628831998-06-08
`
`AndMethodOfMakingTheArticle
`
`
`
`
`
`IntegratedCircuitswithTub-Ties
`
`
`
`Emitter-BaseJunction
`
`
`
`
`
`Reverse\(miBiasedEmitter\(miBaseJunction
`
`
`
`
`
`StructureFormedThereby
`
`
`
`
`
`
`
`ProtrudingSpacersForSelf-AlignedContacts
`
`
`
`ManufactureTherefor
`
`
`
`ManufactureTherefor
`
`
`
`
`
`ofamultilayersemiconductordevice
`
`
`
`
`
`ofamultilayersemiconductordevice
`
`AtTheSurfaceOfTheMetalPlug
`
`
`
`SemiconductorDeviceFreeOfLDDRegions
`
`PATENT
`044886 FRAME 0048
`
`REEL
`
`

`

`Case 1:22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 50 of 108
`22-cv-10632-AK Document 58-19 Filed 11/20/22 Page 50 of 108
`Case 1
`
`11809686
`
`10819253
`
`09469579
`
`09960765
`
`10140536
`
`10607353
`
`09750639
`
`10164909
`
`
`
`VerticalReplacementGate
`
`
`
`
`
`VerticalReplacementGateTransistors
`
`devices
`
`wafer
`
`wafer
`
`
`
`protectioninsemiconductordevices
`
`
`
`
`
`
`
`Transistors
`
`
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`
`caneStatesofAmericaStatesofAmerica soarsscacasStatesofAmerica|2004-12-14StatesofAmerica sssars|GrantedUnitedStatesofAmerica 0965468966136512000-09-05|2003-09-02Lapsed[UnitedStatesofAmerica|2003-02-04cranes0959110865148242000-06-09lunesStatesofAmerica0916240762115551998-09-29{2001-04-03rantedUnitedStatesofAmerica0994340365215202001-08-30StatesofAmerica 0807931061596651993-06-17StatesofAmerica0877700858306191997-01-07|1998-11-03Expired=|UnedStatesofAmerica|2000-12-12cramee|United|2003-02-18cranee|United__frooa-0607|2003-04-29scam|2003-06-26lapsed|United_—_froon.osar|2003-10-07cranes|United——_faoox-ona|2003-01-07cranes|UnitedStatesofAmericacaaras——_aoooanan|2002-01-29cranes|UnitedStatesofAmericaroan0se——_froos.oaas|2007-07-10cranes|Unitedfroor-osan|2009-12-15lapsed|United
`
`
`
`
`
`
`64399812000-12-28StatesofAmerica 1019457866740922002-07-12[2004-01-06|Lapsed[UnitedStatesofAmerica1070216568309432003-11-04|2004-12-14Lapsed[UnitedStatesofAmerica1026585668669702002-10-07|2005-03-15aUnitedStatesofAmerica1094244473815022004-09-16|2008-06-03aUnitedStatesofAmerica1038303168313482003-03-06|2004-12-14Lapsed[UnitedStatesofAmerica 1032125067071142002-12-16|2004-03-16Granted[UnitedStatesofAmerica1093160571896282004-08-31|2007-03-13Granted[UnitedStatesofAmerica1044253368641522003-05-20|2005-03-08Granted[UnitedStatesofAmerica|2002-08-27cranes|United
`
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`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`Semiconductordevicewithapairoftransistorshavingdualworkfunction
`
`
`
`Semiconductordevicewithapairoftransistorshavingdualworkfunction
`
`
`
`
`
`
`ProcessesUsingPhotosensitiveMaterialsIncludingANitroBenzylEster
`
`Apparatusandmethodtoimprovetheresolutionofphotolithography
`
`Apparatusandmethodtoimprovetheresolutionofphotolithography
`
`Arrangementandmethodforpolishingasurfaceofasemiconductor
`
`Arrangementandmethodforpolishingasurfaceofasemiconductor
`
`StructureAndFabricationMethodForCapacitorsIntegratibleWith
`
`
`
`
`
`
`
`StructureAndFabricationMethodForCapacitorsIntegratibleWith
`
`
`
`
`
`Indiumfieldimplantforpunchthroughprotectioninsemiconductor
`
`
`
`
`
`
`
`ThinfilmCMOScalibrationstandardhavingprotectivecoverlayer
`
`
`
`
`
`
`
`Thinf