APPENDIX A
`APPENDIX A
` (1 of 2)
`(1 of 2)
`
`

`

`507235889
`
`04/15/2022
`
`PATENT ASSIGNMENT COVER SHEET
`
`Electronic Version v1.1
`Stylesheet Version v1.2
`
`EPAS ID: PAT7282808
`
`SUBMISSION TYPE:
`
`NEW ASSIGNMENT
`
`NATURE OF CONVEYANCE:
`
`RELEASE OF SECURITY INTEREST
`
`CONVEYING PARTY DATA
`
`Execution Date
`Name
`
`CORTLAND CAPITAL MARKET SERVICES LLC
`04/01/2022
`
`RECEIVING PARTY DATA
`
`Name:
`
`HILCO PATENT ACQUISITION 56, LLC
`
`
`
`
`
`401 N. MICHIGAN AVE., SUITE 1630
`Street Address:
`
`City:
`CHICAGO
`
`ILLINOIS
`State/Country:
`
`Postal Code:
`60611
`
`Name:
`
`BELL SEMICONDUCTOR, LLC
`
`Street Address:
`
`401 N. MICHIGAN AVE., SUITE 1630
`
`City:
`
`State/Country:
`
`Postal Code:
`
`CHICAGO
`
`ILLINOIS
`
`60611
`
`anes BELL NORTHERN RESEARCH,LLC
`401 N. MICHIGAN AVE., SUITE 1630
`
`CHICAGO
`City:
`
`State/Country:
`ILLINOIS
`
`Postal Code:
`
`60611
`
`PROPERTY NUMBERS Total: 131
`
`Number
`Property Type
`
`Patent Number:
`7996047
`
`7702363
`Patent Number:
`
`
`7945285
`Patent Number:
`
`Patent Number:
`8200280
`
`Patent Number:
`7162212
`
`Patent Number:
`
`Patent Number:
`
`Patent Number:
`
`8204554
`
`7319889
`
`7113811
`
`

`

`
`Patent Number:
`8483780
`
`
`Patent Number:
`8140128
`
`
`Patent Number:
`7039435
`
`Patent Number:
`
`8532594
`
`
`Patent Number:
`8078197
`
`
`Patent Number:
`6925489
`
`
`Patent Number:
`
`Patent Number:
`
`Patent Number:
`
`
`Patent Number:
`6549792
`
`
`Patent Number:
`7751541
`
`[PropertyTypeCNmber
`
`
`
`
`Patent Number:
`6941156
`
`
`Patent Number:
`6118881
`
`
`Patent Number:
`7738583
`
`Patent Number:
`
`7502408
`
`
`Patent Number:
`8184679
`
`
`Patent Number:
`8416862
`
`
`Patent Number:
`
`Patent Number:
`
`Patent Number:
`
`
`Patent Number:
`7693551
`
`Patent Number:
`
`8553666
`
`Patent Number:
`
`8243701
`
`

`

`
`Patent Number:
`7317735
`
`
`Patent Number:
`7680205
`
`
`Patent Number:
`8233557
`
`Patent Number:
`
`7664200
`
`
`Patent Number:
`7957450
`
`
`Patent Number:
`8588283
`
`
`Patent Number:
`7646703
`
`
`Patent Number:
`7990842
`
`Patent Number:
`
`8477594
`
`
`Patent Number:
`7586887
`
`
`Patent Number:
`8599755
`
`[PropertyType[CNmber
`
`
`
`
`Patent Number:
`8792432
`
`
`Patent Number:
`8050237
`
`
`Patent Number:
`7751466
`
`Patent Number:
`
`9236901
`
`
`Patent Number:
`9143364
`
`
`Patent Number:
`7421250
`
`
`Patent Number:
`9277499
`
`
`Patent Number:
`8493900
`
`Patent Number:
`
`8218517
`
`
`Patent Number:
`8767700
`
`Patent Number:
`
`8693559
`
`Patent Number:
`
`7680027
`
`

`

`Patent Number:
`7684522
`
`
`
`Patent Number:
`8917704
`
`Patent Number:
`9118442
`
`
`Patent Number:
`
`8284819
`
`
`Patent Number:
`8503506
`
`
`Application Number:
`11567086
`
`Application Number:
`60306271
`
`
`Application Number:
`60525231
`
`
`Application Number:
`
`60673451
`
`Application Number:
`60674822
`
`
`Application Number:
`60742963
`
`
`[PropertyType[Nbr
`
`
`
`Application Number:
`60695155
`
`
`
`Application Number:
`60392573
`
`Application Number:
`61096405
`
`
`Application Number:
`
`61023732
`
`
`Application Number:
`60776523
`
`Application Number:
`60701478
`
`
`Application Number:
`60591104
`
`
`Application Number:
`60634102
`
`
`Application Number:
`
`60591097
`
`
`Application Number:
`60624197
`
`Application Number:
`
`13418967
`
`Application Number:
`
`60963010
`
`

`

`Property Type|Number
`
` Application Number: 60772320
`
`Application Number:
`
`61494848
`
`60350660
`Application Number:
`
`61155482
`Application Number:
`
`Application Number:
`
`61611718
`
`
`
` Application Number: 60927685
`
`61321402
`Application Number:
`
`
`CORRESPONDENCE DATA
`
`Fax Number:
`Correspondence will be sent to the e-mail addressfirst; if that is unsuccessful, it will be sent
`using a fax number, if provided;if that is unsuccesstul, it will be sent via US Mail.
`Phone:
`5749031499
`jgammon@hilcoglobal.com
`JOSHUA GAMMON
`
`Email:
`
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`source=Release of Security Interest-
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`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`source=Release of Security Interest-
`
`Correspondent Name:
`Address Line 1:
`
`AddressLine 2:
`
`Address Line 4:
`
`401 N. MICHIGAN AVE.
`
`SUITE 1630
`
`CHICAGO,ILLINOIS 60611
`
`
`
` NAME OF SUBMITTER: JOSHUA GAMMON
`
`SIGNATURE:
`
`//Joshua Gammon//
`
`04/15/2022
`DATE SIGNED:
`
`This document servesas an Oath/Declaration (37 CFR 1.63).
`
`Total Attachments: 215
`
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`

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`RELEASE OF PATENT SECURITY INTEREST
`
`This RELEASE OF PATENT SECURITY IN'TEREST(“Release”) is made and effective as of
`April 1, 2022 and granted by CORTLAND CAPITAL MARKET SERVICESLLC(the “Collateral
`Agent”), as collateral agent (in such capacity, together with its successors and permitted assigns) for the
`secured parties under the Loan Agreementreferred to below (the “Secured Parties”), in favor of HILCO
`PATENT ACQUISITION 56, LLC, a Delaware limited liability company, BELL SEMICONDUCTOR,
`LLC, a Delaware limited liability company and BELL NORTHER RESEARCH, LLC, a Delaware
`limited liability company (each a “Grantor” and collectively the “Grantors”) and their successors.
`assigns and legal representatives,
`
`Background
`
`Pursuant to the Term Loan Agreement dated as of January 24, 2018 as amended on November17,
`2020(the “Loan Agreement”) among Hilco Patent Acquisition 56, LLC, as borrower, Bell
`Semiconductor, LLC and Bell Northern Research, LLC, as guarantors, the Collateral Agent and the
`lenders party thereto, the Grantors executed and delivered to the Collateral Agent(i) that certain Security
`Agreement by and among the Grantors and the Collateral Agent dated as of January 24, 2018 (the
`“Master Security Agreement’) and (11) that certain Patent Security Agreement by and among the
`Grantors and the Collateral Agent dated as of January 24, 2018 (the “Patent Security Agreement” and,
`together with the Master Security Agreement, the “Security Agreements”);
`
`Pursuant to the Security Agreements, each Grantor pledged and granted to the Collateral Agent
`for the ratable benefit of the Secured Parties a security interest in andto all of the right, title and interest
`of such Grantor in, to and under the Patent Collateral (as defined below);
`
`The Patent Security Agreement was recorded with the United States Patent and Trademark Office
`at Reel 045216, Frame 0020 on February |, 2018: and
`
`The Grantors have requested that the Collateral Agent enter into this Release in orderto
`effectuate, evidence and record the release and reassignment to the Grantors of anyandall right, title and
`interest the Collateral Agent and the Secured Parties may have in the Patent Collateral pursuantto the
`Security Agreements,
`
`Collateral Agent therefore agrees as follows:
`
`Release of Security Interest. Collateral Agent, on behalfofitself and the Secured Parties.
`1.
`their successors, legal representatives and assigns, hereby terminates the Patent Security Agreement and
`terminates, releases and discharges any and all security interests that it has pursuant to the Security
`Agreements in any andall right, title and interest of the Grantors, and reassigns to the Grantors any and
`all right, title and interest that it may have, in, to and underthe following (collectively, the “Patent
`Collateral”):
`
`any and all patents, patent applications and other patent rights and any other
`(a)
`governmental authority-issued indicta of invention ownership, including the patents and patent
`applicationslisted in Schedule | hereto, andall reissues, divisions, continuations, continuations-
`in-part, renewals, extensions and reexaminations thereof and amendmentsthereto (the
`“Patents”);
`
`

`

`all rights of any kind whatsoever ofsuch Grantoraccruing underany ofthe
`(b)
`foregoing provided by applicable law of any jurisdiction, by mternationaltreaties and
`conventions and otherwise throughout the world:
`
`any and all license and other agreements in which such Grantorhas granted oris
`(c)
`granted a license or other right under any Patent;
`
`any andall royalties, fees, income, payments and other proceeds now orhereafter
`(d)
`due or payable with respect to any and all of the foregoing; and
`
`any and all claims and causes ofaction, with respect to any of the foregoing,
`(e)
`whether occurring before, on or after the date hereof, includingall rights to and claims for
`damages, restitution and injunctive and other legal and equitable relief for past, present and future
`infringement, misappropriation, violation, misuse, breach or default, with the right but no
`obligation to sue for such legal and equitable relief and to collect, or otherwise recover, any such
`damages.
`
`Further Assurances. Collateral Agent agrees to take all further actions, and provide to the
`2.
`Grantors and their successors, assigns and legal representativesall such cooperation and assistance,
`including, without limitation, the execution and delivery of any and all further documents or other
`instruments, as the Grantors and their successors, assigns and legal representatives may reasonably
`request in order to confirm, effectuate or record this Release.
`
`Governing Law. This Release and any claim, controversy, dispute or cause ofaction
`3,
`(whetherin contract or tort or otherwise) based upon, arising out of orrelating to this Release and the
`transactions contemplated hereby shall be governed by, and construed in accordance with, the laws of the
`United States and the State of New York, without giving effect to any choice or conflict of law provision
`or rule (whether of the State of New York or any other jurisdiction).
`
`[SIGNATURE PAGE FOLLOWS]
`
`bo
`
`

`

`Collateral Agent has caused this Release to be duly executed and delivered by its officer duly
`authorized as of the date stated in the first paragraph above,
`
`CORTLAND CAPITAL MARKET SERVICES
`LLC,
`
`as Collateral Agent
`
`Orb
`Name: Emily Eirga g Pappas
`Title: Head of tepal, North America
`
`4
`
`By:
`
`ACKNOWLEDGED AND
`AGREEDasofthe date stated in
`the first paragraph above:
`
`HILCO PATENT ACQUISITION
`56, LLC, as Grantor
`
`By: Mua. FLae
`Name: Michael Friedman
`Title: CEO
`
`BELL SEMICONDUCTOR,LLC,
`as Grantor
`
`
`
`fe} John Veschi
`f CEO
`
`BELL NORTHERN RESEARCH,
`LLC, as Grantor
`
`
`
`
`
`By: & 2 i
`Name: Afzal Dean
`Title: CEO
`
`

`

`SCHEDULE1
`TO
`RELEASE OF PATENT SECURITY INTEREST
`[SEE ATTACHED.]|
`
`

`

`lines
`osnssasi__[s1s0a26[1996-06-02[2000-200|cranted[UnitedStatesofAmeric
`
`
`
`
`
`
`
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`
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`
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`
`
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`
`
`
`
`
`0893968958881201997-09-29|1999-03-30[Expired
`
`
`
`
`092163951998-12-18Abandoned
`
`
`PatentNo——s[FifedDate[GrantDate[Status
`
`
`
`
`
`
`64560562001-02-22|2002-11-26|Granted
`
`
`
`62394911998-05-18|2001-05-29|Granted
`
`
`
`
`
`
`betweenatleastlocalinterconnectlevelandfirstmetalinterconnectlevel
`
`
`
`
`Useofcorrosioninhibitingcompoundsinpost-etchcleaningprocessesof
`
`
`
`
`ConsistentalignmentmarkprofilesonsemiconductorwafersusingPVD
`
`
`
`
`ConsistentalignmentmarkprofilesonsemiconductorwafersusingPVD
`
`
`
`
`
`Off-AxisIlluminatorLensMaskForPhotolithographicProjectionSystem
`
`
`
`
`
`
`Polymericdielectriclayershavinglowdielectricconstantsandimproved
`
`
`
`
`UseOfCorrosionInhibitingCompoundsInPost-EtchCleaningProcesses
`
`
`Off-axisilluminatorlensmaskforphotolithographicprojectionsystem
`
`
`
`
`
`
`NitrogenImplantedPolysiliconGateForMosfetGateOxideHardening
`
`
`
`
`
`
`Processforselectivedepositionofpolysiliconoversinglecrystalsilicon
`
`
`
`
`
`ProductResultingFromSelectiveDepositionOfPolysiliconOverSingle
`
`
`
`
`
`NitrogenimplantedpolysilicongateforMOSFETgateoxidehardening
`
`
`
`
`Integratedcircuitstructurewiththindielectricbetweenatleastlocal
`
`
`
`
`
`
`interconnectlevelandfirstmetalinterconnectlevel,andprocessfor
`
`
`
`
`
`Productresultingfromselectivedepositionofpolysiliconoversingle
`
`
`
`
`
`Methodandapparatusforchemicalmechanicalpolishing
`
`
`
`
`
`Rapidthermalprocessingusinganarrowbandinfraredsourceand
`
`
`
`
`Processformakingintegratedcircuitstructurewiththindielectric
`
`
`MethodandApparatusforChemicalMechanicalPolishing
`
`Methodofformingalayerandsemiconductorsubstrate
`
`AppNo
`
`GrantDate
`
`
`
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`
`
`
`
`Laserfaultcorrectionofsemiconductordevices
`
`Laserfaultcorrectionofsemiconductordevices
`
`
`
`
`
`
`
`
`
`
`
`
`
`08924902
`
`
`
`UnitedStatesofAmerica
`
`shadowing
`
`shadowing
`
`feedback
`
`08957692
`
`
`
`UnitedStatesofAmerica
`
`
`
`makingsame
`
`
`
`anintegratedcircuit
`
`
`
`OfAnIntegratedCircuit
`
`08374193
`
`UnitedStatesofAmerica
`
`
`
`
`substrateandresultingproduct
`
`
`
`adhesiontometal
`
`
`
`
`
`CrystalSiliconSubstrate
`
`
`
`
`
`crystalsiliconsubstrate
`
`
`
`Apparatusforrapidthermalprocessingofawafer
`
`

`

`08690592
`
`UnitedStatesofAmerica
`
`implantation
`
`09188929
`
`08723140
`
`08595021
`
`08684022
`
`09534652
`
`UnitedStatesofAmerica
`
`
`
`steps,andarticlesformedthereby
`
`
`
`adhesiontometallines
`
`structure
`
`protection
`
`
`
`performanceenhancement
`
`trench
`
`
`
`
`
`
`
`08701476.=—s«{5905381=——Ss«|1999-05-18Expired1996-08-22[UnitedStatesofAmerica
`fossai947|Expired«(59900101997-04-08[1999-11-23[UnitedStatesofAmeri
`
`
`
`
`
`
`
`
`
`
`
`0936264862737981999-07-27|2001-08-14|ExpiredUnitedStatesofAmerica
`
`08873809UnitedStatesofAmerica
`
`08552461UnitedStatesofAmerica
`
`
`08936829UnitedStatesofAmerica
`
`08748372UnitedStatesofAmerica
`0879124461177361997-01-30|2000-09-12eeUnitedStatesofAmeri
`
`
`
`
`0959447863006632000-06-15|2001-10-09LaelUnitedStatesofAmeri
`
`
`
`
`
`
`
`
`
`
`
`0924432761540391999-02-03|2000-11-28|Expired[UnitedStatesofAmeri
`AnpNo[PatentNo[FiedDate_[GrantOate[Status[Country
`
`
`
`
`
`
`
`
`
`
`59557621996-10-01|1999-09-21expired[UnitedStatesofAmerica
`
`
`
`
`58698691996-01-31|1999-02-09|ExpiredUnitedStatesofAmerica
`1998-11-09ailAbandoned|UnitedStatesofAmericamn[ancml
`
`
`
`
`
`
`56704251995-11-09|1997-09-23|Expired
`
`5843813ee1998-12-01|Expired
`
`58952611997-06-12pow{I
`
`
`
`59703211997-09-25|1999-10-19|Expired
`SedLe
`62582052000-03-24|2001-07-10
`
`
`
` GrantedUnitedStatesofAmerica
`
`
`
`
`
`circuitstructureusingare-entrantgateelectrodeandahigherdosedrain
`
`
`
`
`
`
`protectioninintegratedcircuitstructureswithoutextraimplantandmask
`
`
`
`
`
`
`Methodforformingminimumareastructuresforsub-micronCMOSESD
`
`
`
`
`
`
`Implantation Formationofgradientdopedprofileregionbetweenchannelregionand
`
`
`
`
`
`
`Insulated-gatefield-effecttransistorshavingdifferentgatecapacitances
`
`
`
`Polymericlayershavingimproveddielectriclowdielectricconstantsand
`
`
`
`
`
`
`
`
`heavilydopedsource/draincontactregionofMOSdeviceinintegrated
`
`
`
`Microelectronicdevicewiththinfilmelectrostaticdischargeprotection
`
`FormationOfGradientDopedProfileRegionBetweenChannelRegion
`
`
`
`
`
`
`
`
`
`Endpointdetectionmethodandapparatuswhichutilizeanendpoint
`
`
`
`MethodoffabricatingamicroelectronicpackagehavingpolymerESD
`
`
`
`
`
`/OdriverdesignforsimultaneousswitchingnoiseminimizationandESD
`
`
`
`
`Endpointdetectionmethodandapparatuswhichutilizeanendpoint
`
`
`
`
`
`
`Processformakingintegratedcircuitstructurecomprisinglocalarea
`
`
`
`
`
`
`
`Processformakingintegratedcircuitstructurecomprisinglocalarea
`
`
`
`
`
`AndHeavilyDopedSource/DrainContactRegionOfMOSDeviceIn
`
`
`
`
`Methodoffabricatinginsulated-gatefield-effecttransistorshaving
`
`
`
`
`Pre-conditioningpolishingpadsforchemical-mechanicalpolishing
`
`
`
`
`Pre-conditioningpolishingpadsforchemical-mechanicalpolishing
`interconnectsformedoversemiconductorsubstratebyselective
`
`
`
`
`interconnectsformedoversemiconductorsubstratebyselective
`
`
`
`
`ntegratedCircuitStructureUsingARe-EntrantGateElectrodeAndAHigherDoseDrain
`
`
`
`
`
`MicroelectronicpackagewithpolymerESDprotection
`
`
`depositiononseedlayerinpatternedtrench
`
`depositiononseedlayerinpatterned
`
`
`polishinglayerofcatalystmaterial
`
`
`polishinglayerofcatalystmaterial
`
`differentgatecapacitances
`
`
`
`FunctionalOBICanalysis
`
`
`FunctionalOBICanalysis
`
`
`
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`

`

`11000772
`
`11011896
`
`13253554
`
`13722648
`
`60578890
`
`10327283
`
`9887131
`
`10039508
`
`10972898
`
`11381409
`
`11158450
`
`11063384
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`Lapsed
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`
`
`11016468GrantednitedStatesofAmerica
`
`11098250nitedStatesofAmerica
`
`
`12912791GrantedUnitedStatesofAmerica
`
`
`11286558GrantedUnitedStatesofAmerica
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`603844991900-01-01Abandoned|UnitedStatesofAmeri|2004-01-06elUnited1019577566732002002-07-12StatesofAmeri1002530467133862001-12-19StatesofAmeri1075034869696832003-12-31|2005-11-29iaetoiUnitedStatesofAmeri|2004-03-30Vata|United
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`
`
`
`104183752006-01-03|Lapsed
`
`
`
`
`
`
`
`
`
` P—«*izs997-07-28|__—_—|Abandonedinp—al2002-12-19StatesofAmericafF«L2004-06-109188848[2015-11-172012-12-20|LapsedUnitedStatesofAmericaGrantednited [UnitedStatesofAmerica
`
`
`
`
`
`
`
`[2005-02-15|Granted[UnitedStatesafAmerig377633[poarto-05[2013-02-19Jlapsea[UntedStatesofamen16856029|2001-06-22
`
`
`
`
`
`
`Abandoned|UnitedStatesofAmen
`
`
`
`56001821995-01-24|1997-02-04|Expired[UnitedStatesofAmerica58277771996-09-24|1998-10-27NeeelUnitedStatesofAmerica
`
`
`
`
`
`
`
`
`
`5939181994-04-22|1997-01-14UnitedStatesofAmerica5
`
`
`
`Suandebate1997-07-01|Expired
`
`
`panes(=|2010-12-07anSes2011-09-13 eames
`
`
`
`69987162004-12-16|2006-02-14
`
`
`68413082001-11-09|2005-01-11
`
`
`7067223004-10-25|2006-06-27
`
`
` remo>Nageomasieee|Fema[______fro06-05-08
`[Statuto|‘
`GrantDate
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`LapsednitedStatesofAmerica
`
`
`bandoned|UnitedStatesofAmerica
`
`
`bandoned|UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`
`
`
`
`
`Methodofreducingprocessplasmadamageusingopticalspectroscopy
`
`
`Methodforprotectingasemiconductordevicewithasuperconductive
`
`
`
`
`
`lonrecoilimplantationandenhancedcarriermobilityinCMOSdevice
`
`
`
`
`lonrecoilimplantationandenhancedcarriermobilityinCMOSdevice
`
`
`
`
`EFFICIENTPOWERMANAGEMENTMETHODININTEGRATEDCIRCUIT
`
`
`
`
`Methodofpreventingresistpoisoningindualdamascenestructures
`
`
`
`
`Methodofpreventingresistpoisoningindualdamascenestructures
`
`
`Methodofmakingabarriermetaltechnologytungstenplugfor
`
`
`
`
`CONFIGURABLEPOWERSEGMENTATIONUSINGANANOTUBE
`
`
`
`Diamondmetal-filledpatternsachievinglowparasiticcoupling
`
`
`
`
`
`
`
`Diamondmetal-filledpatternsachievinglowparasiticcoupling
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
`
`
`
`
`
`
`
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
`
`
`
`
`MasklessVortexPhaseShiftOpticalDirectWriteLithography
`
`
`
`Barriermetaltechnologyfortungstenpluginterconnection
`
`
`ImpactofFSpeciesonPlasmaChargeDamage
`
`
`
`
`VortexPhaseShiftMaskAppliedtoOpticalDirectWrite
`
`
`
`UseOfReticleStitchingToProvideDesignFlexibility
`
`
`
`Useofreticlestitchingtoprovidedesignflexibility
`
`
`
`Techniquesforformingsuperconductivelines
`
`SystemsandMethodsForWaferPolishing
`
`
`
`AdjustableTransmissionPhaseShiftMask
`
`
`
`Adjustablephasetransmissionshiftmask
`
`
`
`
`
`
`
`Processindependentalignmentmarks
`
`Capacitance
`
`capacitance
`
`
`
`
`
`Processindependentalignmentmarks
`
`
`nitedStatesofAmerica
`
`
`
`Adjustabletransmissionphaseshiftmask
`
`
`nitedStatesofAmerica
`
`
`Systemsandmethodsforwaferpolishing
`
`line
`
`STRUCTURE
`
`interconnection
`
`
`
`THROUGHANANOTUBESTRUCTURE
`
`

`

`08620964
`
`08347527
`
`09339306
`
`09085913
`
`10614307
`
`
`
`UnitedStatesofAmerica
`
`
`
`UnitedStatesofAmerica
`
`
`
`Emitter-BaseJunction
`
`
`
`StructureFormedThereby
`
`Circuit
`
`
`
`
`
`fiogasea7[2005-07-19StatesofAmericalosss7oiz[2008-05-25Granted_|UnitedStatesofAmericafrovez7es——|7isi05s____—_—(z004-01-222006-12-19[Granted[UnitedStatesofAmerica[6740912__—_—_—_|2000-06-20———(esiez63_—=*(2003-08.19