`Case 6:20-cv-00636—ADA Document 77-2 Filed 03/10/21 Page 1 of 42
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`EXHIBIT 13
`
`EXHIBIT 13
`
`
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`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 2 of 42
`
`lompwana064906r4'
`tigrOrvi,s`.4.effr' '
`
`Dr. Ernest Dennaray,
`Co-founder and CTO - Synnnnorphix March 2004
`Founder and President -Antropy Inc. 2007
`Founder - Dennaray LLC 2012
`Updated and combined presentations 2013
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003208
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 3 of 42
`
`cknowledgement - 2013
`
`The information in this presentation represents a small portion of the work carried out by myself
`and colleagues at Symmorphix Inc. in Sunnyvale CA from 1998 to 2007. Over the course of that time
`more than $100M in venture funding, earned income and private funds was
`i nvested and re-invested in the development of the dense, amorphous dielectric films
`described in this and other presentations that can be found at www.edemaray.com
`
`Symmorphix carried out many funded, purchased and grant supported work that lead to
`more than 50 allowed patents in the areas of equipment, process, materials and devices
`employing RF biased reactive deposition of dielectric films using pulsed DC processes.
`More than 50 patents were granted world wide and are now owned by Demaray LLC.
`Since 2007, I have worked to extend applications of the basic patents to new areas such
`as high index films and devices for application to solar energy and efficient coupling of light
`i nto ands out of LEDs, LDs, OLED devices and optical fiber. The Symmorphix patents as well as
`more recent applications are owned by Demaray LLC and are available for license.
`
`This presentation represents some of the information that was developed in the areas of
`encapsulation and barrier films as well as planar optical and electronic devices. My thanks to all
`the great folks, employees, customers, investors and associates for the great results
`evidenced in this and more particularly, work that is in progress.
`
`Ernest
`R.Ernest Demaray
`ed©edemaray.com
`Portola Valley, Calif.
`
`OMPANY
`
`_...6"-SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003209
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 4 of 42
`
`tivooziOtgoiforryi,- •
`74•4-• ziwvrisor . •
`
`Early Symmorphix Overview
`
`Wide-area
`
`13*
`
`le`
`
`• Erbium-doped planar
`„v9me,90;kzaroplifiers
`„:„,,,
`• High index planar passive
`
`Glass a
`Semicañid
`Photonics an
`Barrier Coatings
`
`• 'a-Si/glass era '
`•Adv. refractory metal film§ display —
`• Amorphous silicon TFTs • ELA for
`• 600x720 mm substrates Polysilicon TFTs
`• —30 production
`„ „ , ,
`paper
`wide area TFT-LCD
`.
`5y4ern5 shipped
`
`-
`
`"..,
`
`• 4 Planar optical triode size
`converter
`•Efficient fiber coupling
`•,Integrated el,ectro-opti
`.
`0Con, bench
`
`"Advanced barner-layers
`OLEDS, other electro-optics
`•Polymer electronics
`r r
`/
`
`on,
`
`r
`
`íd I
`
`AldlAlipiied Materials
`
`1994-91A
`
`
`
`01.420011.
`
`! ri
`
`= physical vapor deposition (sputtering)
`O MPANY
`
`h
`
`olilf:c.7,r
`
`.....,•!?!!!!!!!!!!/..,0„,V,;(!!15'A!!!!.0!!! !! !;:,
`
`SYMMORPHIX '
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003210
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 5 of 42
`
`at Reamwood Sunnyvale CA
`
`Fully operational since Oct '01
`
`Chai acterization
`
`Etch
`
`Inspection
`
`Film Metrology
`
`Optical Metrology
`
`Photolithography
`
`O MPANY
`
`_...e5—SYMMORPH IX
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`<Presentation Name>
`
`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003211
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 6 of 42
`
`h
`4 =,,,`
`444,,Vocr W,;;,
`/fa .A.14,4Pw'
`". 1"
`
`s.
`
`- •
`
`Core Symni 'ipbix technology - Dense and Amorphous dielectric
`films via patented RF biased (ion assisted) pulsed DC reactive
`sputtering (BPDC)
`U UIUItIt
`
`Symmorphix Dense Amorphous Oxide
`
`Symmorphix films are dense, transparent and defect free
`Comparison of two Aluminosilicate films deposited by different PVD
`Techniques
`Dense, Amorphous films achieve theoretical barrier properties,
`electrical strength, optical transparency and surface smoothness.
`
`DEFTS-PA_000321 2
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 7 of 42
`
`iPligif,L0.0).0.49/1"
`• •
`
`.
`
`morphix Core Competence
`ect free amorphous dielectric films
`
`' Defect free conformal
`..
`• . ' Ceramic electrolytiLfor„,,,,ask,„ • ,
`.
`. • . .
`- 11+ ion batteries
`i - •
`•
`- Capacitor Dielectric • • ' .
`Gate Dielectric
`,
`. •
`.,
`For Memory.
`For Transistors
`
`. .
`
` •
` ,
`
`Low-Temperature
`Back plane Embedded Gate for Plastic
`Passive
`
`• , ,
`
`a-Solar Cell
`Band gap layers
`OLED
`Encapsulation
`Barrier
`
`•
`
`•
`
`a
`
`High-Index
`Pesci and couplersr%
`Ptical
`
`Dense
`Uniform
`Conformal
`Defer,: Free
`M ulti Laver
`Large Area
`Low Temperature
`Low Contamination
`Wide Compositional Range
`
`Deposition o
` .
`High-Quality amorphous dielectric'
`
`J MPANY
`
`IAL
`
`SYMMORPHIX'
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003213
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 8 of 42
`
`rocess Tool: Phoenix Deposition System
`
`'PVD,
`
`M ulti-chamber deposition
`system
`
`— Stacked multi-film structures
`
`— Material versatility
`
`• Different targets per PM
`
`• Large selection of target materials
`Available Source Types
`
`— DC Sputtering
`
`— Pulse DC Sputtering
`
`— RF Sputtering
`
`— Substrate Bias
`
`— Active substrate cooling
`
`SLIDE 7
`
`c:)----SYMMORPHIX'
`
`DEFTS-PA_000321 4
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 9 of 42
`
`XVI010":4' •
`
`erature and Large Area Chamber
`
`Temperature range
`— Low end: room temperature ru5°C
`— High temp: 450°C
`— In process, non-contact
`thermocouple for process
`assurance
`Many innovations including
`Wide area canning magnetron
`And electrostatic clamping
`For backside gas cooling.
`
`Substrate size range
`— Smallest: no limit
`— Largest: 600 x 720 mm
`
`O MPANY CONFIDENT
`
`)SYMMORPHIX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
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`DEFTS-PA_000321 5
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 10 of 42
`
`atented Bias Pulsed DC process is Conformal and
`Planarizing and provides "gap fill"
`
`90k0 0 IR
`
`Mikkt4
`SePakkatc-x
`
`Tr(
`
`IIIagIIgI !U!!
`
`5.0kV ic 1m x5.00k SE(U) 6115/01 1354
`
`10.0um
`
`54700 5.0kV 10.9mm x4.50k SEOJ)1/11102 14.35
`
`' 10.0um"
`
`• Conformal coating top and sides, no 'bird's beak at lower step
`
`no 'bread loaf' at upper corner
`
`Gap (trench) fill at low temperature
`
`e Self-planarizing for films ru 3X thicker than step height
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
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`DEFTS-PA_000321 6
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`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 11 of 42
`
`•aq %,101..0,,ie
`Vils449V4,0*,,o,
`af•iz
`•
`lased Pulsed DC is a Planarization Process
`ression of film states for the 1Symmorphous' deposition process
`
`= width of waveguide
`
`H = height of waveguide
`
`aflat = accumulation rate on the
`flat surface
`
`amin= accumulation rate on the
`minimum accumulation
`surface
`
`= surface angle of the
`minimum accumulation
`slope
`
`'.too,Amecoma40:0,,,,
`
`'447/1/00-4,RIMi
`
`h = coating thickness on top
`of the waveguide
`
`,
`kggektgagbfaVelOsgt'
`
`40&124,010%0Alth,,,0%
`
`E. Demaray, Temescal, 1982
`
`O MPANY
`
`SYMMORPHIX"
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
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`DEFTS-PA_000321 7
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 12 of 42
`
`s-Deposited
`
`Cladding/Barrier, partial planarized
`
`493E#0.2t4. ri,
`
`--
`
`S47005 :?1r irrn:3,Tk SE U 7/10/01 14:08
`
`10.0181
`
`Conformal coverage or fill of electronic device topology
`Fracture cross facet demonstrates high strength cleavage
`Low temperature process, no high-temperature re-flow
`Can C.T.E. match with heat treat for low stress and low
`birefringence
`Electrical gate/optical- quality dielectric morphology
`
`O MPANY
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_000321 8
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 13 of 42
`
`04,44.00NagaggiV" -
`*45,5,t,44,pre4~,/4.,, - •
`0. 0.44,4yoyirg,y,"•:,• • iff• ', •••
`
`Metrology Capability see Appendix A
`
`/,"
`
`?„ • '
`pf .
`
`Thickness
`
`Index
`
`Birefringence
`
`Stress
`
`SEM
`
`TEM
`
`DSC
`
`EDX
`
`SIMS
`
`_EP
`
`E
`
`PL Spectra
`
`PL Intensity Map
`
`Lifetime & Cup
`
`Mode Image
`
`c ompANycoNFIDENT
`
`SYMMORPHIX'
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`<Presentation Name>
`
`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_000321 9
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 14 of 42
`
`Gate Dielectric
`For Transistors
`
`Low-Temperature
`Backplane Embedded Gate for Plastic
`Passive
`
`Solar Cell
`Barrier
`
`High-Index
`Passive
`
`_.,..
`
`• C.,
`4S"
`4i
`
`Sensor
`
`Dense
`. uniform
`Optirai
`CrmformaR
`Defert Fg oc-
`Er-doped
`t4 u fiu Layer
`d' 'att'
`Active
`Large Area
`Low Temperature
`Low Contamination
`Wide Compositional Range
`
`,eposition of
`High-Quality amorphous dielectric films
`
`C OMPANY CONFIDENT
`
`f..5—SYMMORPHIX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003220
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 15 of 42
`
`World record optical film uniformity
`and birefringence enables Telco quality films and
`waveguides
`
`APDX
`Reference
`1.445540
`
`0.000093
`0.006%
`n/a
`
`200-1 *
`"92-8"
`Cladding
`1.459371
`
`0.000072
`0.005%
`n/a
`
`200-2
`"92-8"
`Cladding
`1.459667
`
`0.000266
`0.018%
`n/a
`
`-1.18792E-5
`
`-1.22148E-5
`
`-1.22819E-5
`
`Index (TE)
`Average
`Index (TE)
`Uniformity
`Index Delta
`Relative to *
`dn/d2...
`
`201-1
`"83-17"
`Core
`1.474036
`
`201-2
`"83-17"
`Core
`1.473790
`
`202-1
`"35-65"
`Core
`1.560464
`
`202-2
`"35-65"
`Core
`1.562811
`
`0.000226
`0.015%
`0.014665
`0.995%
`-1.34899E-5
`
`0.000150
`0.01%
`0.014419
`0.978%
`-1.34228E-5
`
`0.000525
`0.03%
`0.101093
`6.478%
`-1.56376E-5
`
`0.000910
`0.06%
`0.103440
`6.619%
`-1.56376E-5
`
`-0.000814
`
`-0.001012
`
`0.000028
`
`0.000026
`
`9187.65
`
`16188.55
`
`-0.001027
`
`-0.000894
`
`-0.000884
`
`-0.000508
`
`-0.000415
`
`0.000021
`
`0.000032
`
`0.000033
`
`0.000072
`
`0.000124
`
`15693.57
`
`6251.37
`
`6387.49
`
`3042.96
`
`2929.48
`
`Birefringence
`Average
`Birefringence
`Uniformity
`Thickness
`Average
`Thickness
`Uniformity
`RMSE
`Average
`Uniformity is 1 standard deviation
`
`90.58
`1.0%
`2.450
`
`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`257.37
`1.6%
`4.787
`
`339.75
`2.2%
`4.943
`
`84.08
`1.3%
`1.815
`
`69.03
`1.1%
`1.816
`
`20.71
`0.7%
`1.057
`
`49.12
`1.7%
`1.029
`
`OMPANY
`
`__4(5SYMMORPHIX'
`
`DEFTS-PA_0003221
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 16 of 42
`
`evolutionary "Adiabatiet or loss-less Mode Size Converter
`ted and patented using biased-pulsed DC reactive
`sputtering and refractory dielectric films
`
`NV:cA 'VAAVietv, ,,),0 4
`Adiabatic vertical S-taper pe0$0:
`)000,0 jvISC loss ,-.0.15dvey IrepilAyrtr kir .k,ir
`
`Efficient mode size coupling of pump light from the 1060 fiber
`More size conversion & vertical coupling to high intensity amplifier
`
`O MPANY
`
`SYMMORPH IX
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`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003222
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 17 of 42
`
`e Mode Size Converter is between the passive
`fiber coupled mode and the smaller Erbium doped
`(green) gain region of the amplifier
`
`Pump light from fiber to die
`
`Pump light appears in active core
`
`Demonstrated mode size conversion:
`• Efficient mode matching and coupling from fiber
`to the passive waveguide
`• MSC provides loss less mode size compression
`• to small mode waveguide for higher pump intensity
`higher inversion and higher signal gain.
`iv V A
`
`SYMMORPHIX
`
`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003223
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 18 of 42
`
`Vertically-Tapered Waveguide Structure
`
`o Passive core to fiber (signal)
`- 8.5 gm mode field diameter
`(matches fiber)
`- <0.3 dB/facet coupling loss
`(minimizes OSNR degradation)
`
`e Passive core to pump die
`- Match pump's mode field
`- Match pump's NA
`- Improve pump
`coupling efficiency
`
`Upper Clad
`
`High-Index Core
`Passive Core
`Lower Clad
`Silicon Wafer
`
`to High-Index core
`- 3 gm mode field diameter
`- High optical confinement
`
`SYMMORPH IX
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`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003224
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`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 19 of 42
`
`rT n Gap Fill patented and proven
`
`Signal
`92%
`(0.35dB)
`
`Pump
`96%
`(0.15dB)
`
`S4700 5.0kV 10.9mm x45 0k SE(U) 1/11/02 14:35
`
`1
`
`1
`
`1
`1
`1
`10.0um
`
`1
`
`1
`
`Demonstrated narrow gap nnux region deep fill
`and low-loss signal/pump nnux
`
`LI iviV ik
`
`SYMMORPH IX
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`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003225
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`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 20 of 42
`
`Performance fits "Ideal" Optiwave
`model with 90%+ performance
`
`Measured
`
`0
`
`-0.5
`
`-1
`
`-1.5
`
`-2
`
`-2.5
`
`-3
`
`-3.5
`
`-4
`
`-4.5
`
`-5
`
`Coupling efficiency
`Signal: 92%
`Pump: 96%
`
`1.5
`
`-0.5
`
`0 I
`
`2000
`
`4000
`
`6000
`
`8000
`
`10000
`
`Simulated
`
`Mux Length ( urn )
`
`O MPANY CONFIDENT
`
`SYMMORPHIX'
`
`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003226
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`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 21 of 42
`
`Performance also near perfect and fits
`Optiwave waveguide model
`
`L-3400
`
`L=3100
`
`L=2800
`
`Signal
`
`1530
`
`1535
`
`1540
`
`1545
`
`1550
`
`1555
`
`1560
`
`1565
`
`Signal Wavelength (nm)
`
`• 1.5fv2% integrated tap demonstrated
`• Flat transmission profile across C band
`• Low PDL (0.1dB)
`• Performance independent of signal power
`
`U iV rAiv T
`
`SYMMORPHIX'
`
`25
`
`22.5 --
`
`20
`
`17.5 -
`
`Total IL of Tap (dB)
`
`15
`1525
`
`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003227
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 22 of 42
`
`/ Bow Optimization with single wafer
`al — allows engineered birefringence
`
`Quartz Substrates
`
`300
`
`200
`
`E , 00
`
`1•Stress It
`
`•Bow (um
`
`Temperature
`
`Low residual stress 4 low birefringence
`Low slope 4 low temperature dependence
`
`O M PAN Y
`
`SYMMORPH IX
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`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003228
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 23 of 42
`
`mplifying Photonic Integrated Components
`1% Er+3 doped aluminosilicate PVD wave-guides
`
`1) Array of amplets
`
`>15 dB
`Gain
`100 nnW
`Pump / port
`<6dB
`Noise Figure
`1529-1562nnn
`Full C-Bandwidth
`8 dBnn
`Output power
`4 channel 20 cm long single mode array
`
`Monolithic Integration'
`
`2) Embed amplet arrays with mux/demux, switches, etc.
`
`O M PAN Y
`
`SYMMORPHIX
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`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003229
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 24 of 42
`
`ix Aluminosilicate -Water Barrier Performance
`cordia test of Er+3 doped planar waveguide amplifier
`
`10 cm long, 1% index contrast single
`mode wave guide passive
`Active aligned and Pigtailed with Hi
`1060 Fiber using thermal cured
`epoxy
`
`'----5O-ir-e),m4p.....94x 1500
`aciikuhln141111R101—'
`
`25
`
`Out of package with continuous
`optical transmission monitoring
`Geological impermeable to water vapor
`"amorphous river rock" Ian Jenks
`
`V ik
`
`SYMMORPH IX '
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`<Presentation Name>
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`1/15/2021
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`C OMPANY CONFIDENTIAL
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`DEFTS-PA_0003230
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 25 of 42
`
`nology Status Passive Performance
`
`Waveguide-to-fiber coupling loss
`
`<0.05dB/facet
`
`Waveguide propagation loss
`• Planarizing gap fill
`
`• Mux & tap coupling efficiency
`
`, Mode size conversion
`demonstrated
`
`<0.07dB/cm
`Single step; No reflow
`
`92,u96% mux
`
`ru3:1 reduction
`
`Note; the dielectric test data by STMicro was the basis for high k
`capacitor applications of rare earth doped amorphous coatings by the
`bias PDC process.
`Damp heat testing of the optical waveguide amplifier with the same
`dense refractory oxides, showing geological resistance to moisture,
`was the basis for the development of the widely allowed dielectric
`barrier film patents and applications.
`
`O M PAN Y
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003231
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 26 of 42
`
`44444414, 444: 4444 a
`VP44,404`tt
`40404 4
`
`„Alll:44tt"
`
`Water/Moisture Barrier Applications
`
`• .
`
`• . • •
`
`•••
`
`• • .
`
`• .. • . .. •
`
`•
`
`• •. • • . • •.. • .
`•
`•
`
`Back • lane Integrated
`Passives
`
`Optical Mode
`Management
`
`EO
`Barrier
`OLED encapsulation
`ciz.As,
`Barrier
`
`and
`
`High-Index
` Passive
`
`Er-doped
`Active
`
`Plastic
`substrate
`Barrier
`
`;i:4.41
`
`Dense .A.4
`<ova
`Uniform
`ConformalECal P
`
`
`Defect Free
`Multi Layer
`Large Area
`, Low Temperature
`Low Contamination 4,
`- Wide Compositional Range
`tt 44:
`
`pQst11
`lat'g
`
`1:::1147
`
`C OMPANY CONFIDEN
`
`SYMMORPHIX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003232
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 27 of 42
`
`Barrier Coating Applications
`
`Encapsulating Moisture & Oxygen Barrier for:
`— Organic Light Emitting Diode (OLED) Displays
`— Inorganic Electro-Luminescent (EL) Displays
`— Photovoltaic (PV) Cells
`— Optical storage media
`Wear-Resistant Dielectric Barrier Coating for:
`— Touch (Fingerprint) Sensors
`— Displays / touch sensitive and pen based display and electonics
`— Other Bio-contact sensors
`— Optical polymers and devices, eyeglasses, optics
`Contamination & Thermal Barrier for:
`— OLED Displays and electronics on glass and Plastic Substrates
`— Flexible Electronics on Plastic Substrates
`Protective Anti-Reflective Optical Coating for:
`— Display glass — out coupling for OLEDs
`— Polymer sheet substrate stock
`— CD-DVD-R disks
`— VCSELs and III/IV devices and modules
`— SAW devices
`
`OMPANY
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003233
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 28 of 42
`
`arliest moisture barrier feasibility -
`Process and Test Conditions
`
`• Substrate: glass or silicon wafer
`• Aluminum: 100A sputtered aluminum (porous)
`— Blanket or
`— Shadow mask patterned
`Barrier: 1000A or 2000A "35-65" aluminosilicate
`— 35% silica & 65% alumina
`— Two process recipes "A" and "B"
`Process Temperature: at ambient
`Test Conditions
`— Symmorphix 85°C /-95% RH
`— Philips
`85°C /50% RH
`— Battelle
`60°C /90% RH
`• Testing in both boiling water and in a pressure cooker (suggested by
`Dr. Kam Law, CEO of AKT) showed the latter to be much more effective
`in corrosion developments of barrier defects.
`
`O MPANY
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003234
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 29 of 42
`
`Initial Symmorphix Barrier Performance on Aluminum
`coated wafers and glass with 100nm 92/8
`
`Barrier tests conducted on Al coated Si wafers covered with 10
`nm Alumino-Silicate show no degradation of Al after 500 hrs.
`under 85/95 condition, Q3 2002
`
`For comPar,Son.
`Poor ba rier
`after 232 hours
`
`ori wafer
`Olorion III
`sauttPred aluminum (poratis)
`I alunlinosilirate
`5 prior
`I( Toro
`aabler
`RH
`
`157 Hours
`•
`
`For comparison:
`Poor barrier
`after 157 hours
`
`Mbstrate: sodalime glass
`ivunii(pinii 10010 simPlered aluminum (porous)
`narrier 1000A aluminosilicate
`Process Temperature( at xnbient
`c ic
`
`Whole coated wafer
`Pre Symmorphix/USDC program
`Work began August 2003 with polymern and OLED
`manufacturers
`Key challenge: Process integration
`
`Al dots coated wafer
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003235
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 30 of 42
`
`ss B (100A Al + 1000A Barrier)
`Pulsed DC with bias
`
`er4V4MaiMov,,v-44,
`
`10,4040,4,
`vtielya
`•,11, 47, 14
`
`157 Hours
`
`• "4--
`
``',:r4,"
`
`01 101404, 44:14,,,V
`4 /40,4
`
`No Visible Attack
`
`C LI fri r A iv
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003236
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 31 of 42
`
`fyil/
`
`hysical Barrier Properties FTIR
`measurement of incursion of water
`As Deposited After 6 hours of 250 C
`superheated steam
`
`Blank Si WV-
`P-1-112 Spectrum
`
`Silicon wafer
`
`Thermal oxide
`5 tm film
`
`Arizona process
`10 pm A1203:5i02
`
`T hermal Oxide
`PTIM Spectrum
`
`1-1-iermal Oxide Pressure Cooked
`P-1-112 Spectrum
`
`AZ Process Annealed
`P-1-11, Spectrum
`
`AZ Process Annealed Pressure
`Cooked PTIR Spectrum
`
`411110
`
`Water undetectable in Symmorphix 'Arizona ' PVD film
`
`Standard PVD
`10 pm A1203:5i02
`
`AZ Process Unannealed
`
`FTIR Spectrum
`
`AZ Process Unannealed Pressure
`
`Cooked FTIR Spectrum
`
`2 C,C,
`
`1 1"
`
`yvazylono.mezoz ,, '5-
`
`OMPANY CONFIDENT
`
`_;(51-SYMMORPH
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003237
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 32 of 42
`
`rnPrele.*
`
`Touch Sensors STMicro Fingerprint
`detector barrier Results
`
`BIC
`
`• Goal is to provide higher electrical
`performance and greater environmental
`protection simultaneously
`• Deposited barrier and etched bond pad
`openings using existing process technology
`• Devices tested by customer and exceeded
`their control device performance
`Impervious to all organic solvents, acetone,
`MEK, halogenated toluene, Carbon
`tetrachloride...oxidizing acids.
`
`50 drops
`Aluminosilicate
`51.1m
`101.1m
`
`30 drops
`Control
`
`SYMMORPHIX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003238
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 33 of 42
`
`nsors Industry Challenges
`
`High-performance wear-resistant dielectric coating on
`fingerprint sensors
`
`::000100'0.40.0ifit 0 :
`
`fi4O.4CM*I***.046
`:Agcrrfrr.t
`7A.!Zr,7"
`
`TOUCH AND GO:
`swapping
`PINS for
`fingerprints
`
`itiktte°A4
`rat iitem atitfia.
`doom ii0
`
`atolC
`
`;7R:7;A
`
`O MPANY CONFIDENT
`
`SYMMORPHIX"
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003239
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 34 of 42
`
`r OLED Industry Challenges
`
`OLE D advantages:
`— Thinness
`— Weight
`— Wide viewing angle
`— Color quality
`
`Impediments to near term market growth on glass substrates;
`"Biggest technical challenge is lifetime" (Kim Allen, analyst, SR, Optics.org article 3/25/02)
`
`Eteetzon
`runisnori
`. La ke§ I.ETLI
`
`LIyI (Hu.)
`
`athode
`
`2 to 10 VIX
`
`•=r
`
`Lifetime
`determined by moisture/oxygen reacting with
`organic layer and metal cathode (e.g., MgAg or
`Li) 4 Requires barrier coating
`
`no
`node
`
`Outcoupling
`determined by current/voltage conditions
`For brightness 4 Requires optical out-
`coupling coating and active
`addressing
`
`O MPANY
`
`SYMMORPHIX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003240
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 35 of 42
`
`ents: Organic Semiconductor
`
`Low temperature processing
`— Substrates and materials
`— 150 °C maximum temperature limit
`Substrate versatility
`— Glass — display
`— Plastic — electronics, display
`— Foils — display
`— No standard substrate size or format
`Barrier and Encapsulation Applications
`— Good Barrier to contaminates, moisture and oxygen
`• Protection from substrate: organics and conduction paths
`• Protection from atmosphere: water & oxygen
`— Low film stress
`— Good adhesion of the films
`
`DEFTS-PA_0003241
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 36 of 42
`
`erature, < 150 °C
`
`Symmorphix has developed an active cooling system
`using electrostatic clamping
`— Substrate surface temperatures of < 50°C have been achieved for
`high power deposition processes on plastic films
`Productivity Enhancement
`— Process time reduction
`• Low duty cycle 250 nnn film in 120 minutes w/o ESC, max temp > 50 °C
`• High duty cycle 250 nnn film in 12 minutes with ESC, max temp < 50 °C
`Lower Cost-of-Ownership
`— Higher Throughput of the deposition system
`— Higher yield due to lower temperature processing.
`
`DEFTS-PA_0003242
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 37 of 42
`
`ic Chuck (ESC) Results
`
`Coated Plastic
`Substrate
`
`Maximum Temperature 43 °C
`
`Temperature
`Sensors
`
`Dr. Hongmei Zhang and team (right) circa 2004
`Prototype Electro-Static Chuck for plastic substrates
`Performed extended time deposition test
`— Barrier process parameters, <50 °C maximum temperature
`
`SYMMORPH IX '
`
`DEFTS-PA_0003243
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 38 of 42
`
`r OLED Customers
`
`AM
`AM
`
`400,00
`400.100
`
`44m,
`
`Global OLED market is expected to be
`worth US $3051.2 million by 2015. The
`global market is expected to record a
`CAGR of 27.8% from 2010 to 2015,
`(www.nnarketsandnnarkets.conn)
`
`370.170
`
` ,
`
`tI HI=
`
`AM
`AM
`
`680x880
`680x880
`
`
`
` 3,70g"'
`
`-A
`
`M
`AM
`
`550x670
`550x670
`
`370,470
`
`t 33=
`PM
`370.170
`PM
`370.170
`
`iP4" Essii
`',g00-00
`3377rx.g
`
`O MPANY
`
`SYMMORPH IX
`
`DEFTS-PA_0003244
`
`0,11CTechnahe
`odic Tachnahe
`
`samsolirlEc
`samsolirlEc
`
`,r,..7b Elect.
`
`'72g
`
`Zgg
`IECO
`
`UM/Wm Technolela
`UnA/Blat Techna.
`LIMO
`
`4.4,0
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 39 of 42
`
`r OLED Symmorphix Results
`
`Coated at < 75°C (suitable for plastic substrates)
`— Other coatings done at 29°C
`Coatings typical thickness of 500-2000A aluminosilicate
`— Amorphous thin film is flexible, scratch resistant and transparent
`Deposited over wide area under production COO
`— On panels or sheets up to 600x720nnnn sheets
`— Typical cost estimated at — 20$/M2 direct plus indirect cost
`Continuous operation showed NO ingress through barrier on
`top or ingress from edge, 2000 hr. damp heat
`Other films can be deposited using the Symmorphix system
`— Lower temp. flexible barrier for plastic substrates
`— Transparent TCO eg. Al-ZnOxide, ITO, Cd Stannate etc.
`— Low-hydrogen amorphous si or ge (crystallization into polycrystalline TFTs)
`— Electronic quality, low to high k gate electrode dielectric films
`— Interconnect metals (e.g., A, Mo, ITO, etc.)
`
`O MPANY
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003245
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 40 of 42
`
`4W042000Welftow4ow.wp-
`PPOWSWParigv4v
`
`r OLED Alternatives
`
`• Can Encapsulation
`
`Glass Substrate 2
`
`Organic
`Stack
`ITO Electrode
`3 4. /
`
`10
`
`Symmorphix Barrier
`
`Single-Layer Barrier
`
`Active OLED
`
`6—{
`OLED
`
`9 Epoxy
`
`\ 8
`
` Dessicant
`
`4 \-,\••
`Case 7
`
`-/
`
`Two Glass Sheets
`
`Vitex Barix Multi-Layer Stack
`
`.,/,/////,,,,,,,/////.,////////////////,,/ ,///,'//////////// •
`
`Glass Substrate
`
`Epoxy
`
`Glass Substrate
`
`Organic
`Stack
`
`Electrode
`
`Source: Vitex Systems
`
`M PANYCONFIDENT
`
`_..6. SYMMORPHIX"
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003246
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 41 of 42
`
`Glovebox attached to the GEN3 Cluster
`tool
`Evap inside Glove Box
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003247
`
`
`
`Case 6:20-cv-00636-ADA Document 77-2 Filed 03/10/21 Page 42 of 42
`
`IV Metrology Setup Complete
`
`Off I-V set-up
`
`flig4MVP
`
`On
`
`Device Close up
`
`L-I-V set-up
`
`SYMMORPH IX
`
`<Presentation Name>
`
`1/15/2021
`
`C OMPANY CONFIDENTIAL
`
`DEFTS-PA_0003248
`
`