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`DRAM DATA BOOK |
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`WetTanTECHNOLOGY,INC.
`
`XILINX EXHIBIT 1017
`ele(oa
`
`XILINX EXHIBIT 1017
`Page 1
`
`

`

`DYNAMIC RAMS .............................................. . .
`
`WIDE DRAMS ................................................... . .
`
`DRAM MODULES ............................................. __
`
`IC DRAM CARDS ............................................. __
`
`MULTIPORT DRAMS ........................................ . .
`
`APPLICATION/TECHNICAL NOTES ................ . .
`
`PRODUCT RELIABILITy.................................. . .
`
`PACKAGE INFORMATION ............................... __
`
`SALES INFORMATION ..................................... . .
`
`XILINX EXHIBIT 1017
`Page 2
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`

`

`
`
`
`
`XILINX EXHIBIT 1017
`Page 3
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`XILINX EXHIBIT 1017
`Page 3
`
`

`

`DRAM DATA BOOK
`
`2805 East Columbia Road
`Boise, Idaho 83706
`Telephone: (208) 368-3900
`FAX: (208) 368-4431
`Customer Comment Line:
`800-932-4992 (USA)
`01-208-368-3410 (IntI.)
`
`©1992, Micron Technology, Inc.
`Printed in the U.S.A.
`
`Micron Technology, Inc., reserves the right to change products or specifications without notice.
`
`XILINX EXHIBIT 1017
`Page 4
`
`

`

`I'IIIC:~ON
`
`ABOUT THE COVER:
`
`Front - Clockwise from left, 1) Micron's 16 Meg DRAM
`wafer; 2) More than 4,000 Micron team members give
`painstaking attention to every step of the production pro(cid:173)
`cess; 3) Scanning electron microscope (SEM) photograph
`of Micron's DRAM mini-stack process; and 4) Micron's.
`Triple Port, Dual Port and 4 Meg DRAMs inSOJ, ZIP and .
`TSOP packages.
`
`Back - Micron's Boise, Idaho, corporate headquarters
`including three fabrication facilities.
`
`XILINX EXHIBIT 1017
`Page 5
`
`

`

`ftJIlC:~CN
`1-·
`r""'I '"
`,
`
`PREFACE
`GENERAL INFORMATION
`
`IMPORTANT NOTICE
`
`Micron Technology, Inc., reserves the
`right to change products or specifica(cid:173)
`tions without notice. Customers are
`advised to obtain the latest versions of
`product specifications, which should
`be considered in evaluating a product's
`appropriateness for a particular use.
`There is no assurance that Micron's
`semiconductors are appropriate for any
`application by a customer.
`
`MICRON TECHNOLOGY, INC.,
`MAKES NO WARRANTIES EX(cid:173)
`PRESSED OR IMPLIED OTHER THAN
`COMPLIANCE WITH MICRON'S
`SPECIFICATION SHEET FOR THE
`COMPONENT AT THE TIME OF
`DELIVERY. ANY CLAIM AGAINST
`MICRON MUST BE MADE· WITHIN
`NINETY (90) DAYS FROM THE DATE
`OFSHIPMENTFROMMICRON,AND
`MICRON HAS NO LIABILITY
`THEREAFTER. ANY MICRON LIA(cid:173)
`BILITY IS LIMITED TO REPLACE(cid:173)
`MENT OF DEFECTIVE ITEMS OR
`RETURN OF AMOUNTS PAID FOR
`DEFECTIVE ITEMS (AT THE BUYER'S
`ELECTION).
`
`MICRON'S PRODUCTS ARE NOT
`AUTHO~DFORUSEASCRITICAL
`COMPONENTS IN LIFE SUPPORT
`DEVICES OR SYSTEMS WITHOUT
`THE EXPRESS WRITTEN APPROVAL
`OF THE PRESIDENT OF MICRON
`TECHNOLOGY, INC. AS USED
`HEREIN:
`
`A. LIFE SUPPORT DEVICES OR
`SYSTEMS AR~ DEVICES OR SYS(cid:173)
`TEMS WHICH (1) ARE INTENDED
`FOR SURGICAL IMPLANT INTO THE
`BODY, OR (2) SUPPORT OR SUSTAIN
`LIFE AND WHOSE FAILURE TO
`PERFORM WHEN PROPERLY USED
`IN ACCORDANCE WITH INSTRUC(cid:173)
`TIONS FOR USE PROVIDED IN THE
`LABELING CAN BE REASONABLY
`EXPECTED TO RESULT IN A
`. SIGNIFICANT INJURY TO THE USER.
`
`B. CRITICAL COMPONENT IS ANY
`COMPONENT OF A LIFE SUPPORT
`DEVICE OR SYSTEM WHOSE
`FAILURE TO PERFORM CAN BE
`REASONABLY EXPECTED TO CAUSE
`THE FAILUREOF THE LIFE SUPPORT
`DEVICE OR SYSTEM OR TO AFFECT
`ITS SAFETY OR EFFECTIVENESS.
`
`PREFACE
`REV.A/9.2
`
`'
`
`MicI'onTed,'101ogy, m., J8$8f\IM the right In change products or speeificationfl wilhouH'Iotlce.
`@1992, Micron Technology, Inc.
`
`XILINX EXHIBIT 1017
`Page 6
`
`

`

`I"IICI=ION
`
`PREFACE
`GENERAL INFORMATION
`
`PREFACE
`REV.41Q2
`
`ii
`
`XILINX EXHIBIT 1017
`Page 7
`
`

`

`MIC:RON
`1-·
`
`no"""o,,,,,
`
`PREFACE
`GENERAL INFORMATION
`
`Dear Customer:
`
`Micron Technology, Inc., is dedicated to the design,
`manufacture and marketing of high quality, highly reliable
`memory components. Our corporate mission is
`
`"To be a world class team
`developing advantages for our customers"
`
`At Micron, we are investing time, talent and resources
`to bring you the finest DRAMs, SRAMs, VRAMs and other
`specialty memory products. We have developed a unique
`intelligent burn-in system, AMBYXM
`, which evaluates and
`reports the quality level of each and every component we
`prodl;lce.
`
`We are dedicated to continuous improvement of all our
`products and services. This means continual reduction of
`electrical and mechanical defect levels. It also means the
`addition of new services such as "just-in-time" delivery
`and electronic data interchange programs. And, when you
`have a design or application question, you can get the
`answers you need from the source through one of Micron's
`applications engineers.
`
`We're proud of our products, our progress and our
`performance. And we're pleased that you're choosing
`Micron as your memory supplier.
`
`The Micron Team
`
`PREFACE
`REV. 4192
`
`iii
`
`Micron Technology, Inc., reserves the right to change products or specifications wilhout notice.
`©1992, Micron Technology, Inc.
`AMByX .... is a trademark of Micron Technology, Inc.
`
`XILINX EXHIBIT 1017
`Page 8
`
`

`

`MIC:RON
`1-·
`
`'"''''''0,"'''
`
`PREFACE
`GENERAL INFORMATION
`
`ADVANTAGES
`Micron Technology brings quality, productivity and
`innovation together to provide advantages for our cus(cid:173)
`tomers. Our products feature some of the industry's
`fastest speeds and smallest die sizes. And we establish
`delivery standards based on your expectations, including
`JIT programs, made possible by ever-increasing product
`reliability.
`
`COMPONENT INTEGRATED CIRCUITS
`Micron Technology entered the memory market 14
`years ago first designing, then manufacturing dynamic
`random access memory (DRAM). From there, we devel(cid:173)
`oped high-performance fast static RAM (SRAM), multiport
`DRAM (VRAM and Triple Port DRAM), and a variety
`other memory products.
`As we bring progressive memory solutions to our
`customers, we enjoy recognition for our achievements.
`Micron's Triple Port DRAM was the first IC ever to
`incorporate a second, independent serial access port,
`allowing unparalleled flexibility in data manipulation. In
`1990, Micron's Triple Port received the 1990 "Product of
`the Year" award from Electronic Products magazine.
`
`SPECIALTY MEMORY PRODUCTS
`Beyond our standard component memory, Micron is
`introducing many revolutionary products that we expect
`will follow the Triple Port's tradition. From FIFOs to
`processors, Micron continues to forge ahead into new
`and exciting frontiers.
`We are pleased to be first to market with our compact,
`easy-to-install 88-pin IC DRAM Card. Ideal for laptop,
`notebook and other portable systems, Micron's IC DRAM
`Card offers both high density and low power within
`JEDEC and JEIDA specifications.*
`
`MILITARY CERTIFIED PRODUCTS
`As one of the few manufacturers of military-grade
`memory in North America, Micron is proud to provide a
`documented source inspection from wafer start to fin(cid:173)
`ished product. We've earned recognition from U.S. and
`European space agencies as well as Joint Army/Navy
`
`certification for both our NMOS and CMOS process
`technologies.
`
`DIE SALES
`In addition to our durable packaging, Micron also
`provides memory devices in bare die form. These
`are increasingly in demand for commercial and military
`use in highly specialized applications. Micron's bare die
`products are available both in 6" wafers and wafflepacks.
`
`CUSTOM MANUFACTURING SERVICES
`For total project management, Micron offers added(cid:173)
`value services. These include both standard contract
`manufacturing services for system-level products includ(cid:173)
`ing .design, assembly, customer kitted assembly, compre(cid:173)
`hensive quality testing or shipping as well as complete
`turnkey services covering all phases of production. Our
`component and system-level manufacturing facilities
`are centrally located in Boise, Idaho, so the component
`products you need are readily available.
`
`QUALITY
`Without a doubt, quality is the most important thing
`we provide to every Micron customer with every Micron
`shipment. That's because we believe that quality must
`be internalized consistently at every level of our com(cid:173)
`pany. We provide every Micron team member with the
`training and motivation needed to make Micron's quality
`philosophy a reality.
`One way we have measurably improved both produc(cid:173)
`tivity and product quality is through our own quality
`improvement program formed by individuals through(cid:173)
`out the company. Micron quality teams get together to
`address a wide range of issues within their areas. We
`consistently and regularly perform a company-wide self(cid:173)
`assessment based on the Malcolm Baldrige National
`Quality Award criteria. We've also implemented statisti(cid:173)
`cal process controls to evaluate every facet of the memory
`design, fabrication, assembly and shipping process. And
`our AMBYX" intelligent burn-in and test system" gives
`Micron a unique edge in product reliability.
`
`*See NOTE, page v.
`**For more information on Micron's AMBYXm , see Section 7.
`
`PREFACE
`REV. 4/92
`
`iv
`
`Micron Technology, tnc., reserv9slhe right to change products or specifications without notice.
`©1992, Micron Technology, Inc.
`AMBY)(1'M IS a trademark of Micron TechnolCIQY. Inc.
`
`XILINX EXHIBIT 1017
`Page 9
`
`

`

`UIC:I=ION
`1-·
`
`","cccem""
`
`ABOUT THIS BOOK
`
`CONTENT
`The 1992 DRAM Data Book from Micron Technology
`provides complete specifications on all standard DRAMs
`and DRAM modules as well as specialty and derivative
`products based on our DRAM production process.
`The DRAM Data Book is one of three product data books
`Micron currently publishes. Its two companion volumes
`include our SRAM Data Book and Military Data Book.
`
`SECTION ORGANIZATION
`Micron's 1992 DRAM Data Book contains a detailed
`Table of Contents with sequential and numerical indexes of
`products as well as a complete product selection guide. The
`Data Book is organized into nine sections:
`
`• Sections 1-5: Individual product families. Each
`contains a product selection guide followed by
`data sheets.
`• Section 6: Application/technical notes.
`• Section 7: Summary of Micron's unique
`quality and reliability programs and testing
`operation, including our AMBYX=intelligent
`burn-in and test system.'
`• Section 8: Packaging information.
`• Section 9: Product ordering information,
`including a list of sales representatives and
`distributors worldwide.
`
`DATA SHEET DESIGNATIONS
`
`PREFACE
`GENERAL INFORMATION
`
`DATA SHEET SEQUENCE
`Data sheets in this book are ordered first by width and
`second by depth. For example, the DRAM section begins
`with the 1 Meg x 1 followed by 4 Meg x 1 and all other xl
`configurations in order of ascending depth. Next come the
`x4 products, followed by x8, etc., as applicable to the
`specific product family.
`
`DATA SHEET DESIGNATIONS
`As detailed in the table below, each Micron product
`data sheet is classified as either Advance, Preliminary or
`Final. In addition, new product data sheets that are new
`additions are designated with a "New" indicator in the tab
`area of the front page.
`
`SURVEY
`We have included a removable, postage-paid survey
`form in the front of this book. Your time in completing and
`returning this survey will enhance our efforts to continually
`improve our product literature.
`For more information on Micron product Iitcraturl', or to
`order additional copies of this publication, contact
`
`Micron Technology, Inc.
`2805 East Columbia Road
`Boise, ID 83706
`Phone: (208) 368-3900
`FAX: (208) 368-4431
`Customer Comment Line:
`800-932-4992 (USA)
`01-208-368-3410 (Intl.)
`
`DATA SHEET MARKING
`"Advance"
`"Preliminary"
`
`No Marking (Final)
`
`"New"
`
`DEFINITION
`This data sheet contains initial descriptions of products still under development.
`This data sheet contains initial characterization limits that are subject to change upon full
`characterization of production devices.
`This data sheet contains minimum and maximum limits specified over the complete power
`supply and temperature range for production devices. Although considered final, these
`specifications are subject to change, as further product development and data character-
`ization sometimes occur.
`This data sheet (which may be either Advance, Preliminary or Final) is a new addition to
`the Data Book.
`
`NOTE: Micron's DRAM Data Book uses acronyms to refer to certain industry-standard-setting bodies. These are defined
`below for your reference:
`EIAIJEDEC-Electronics Industry Association/Joint Electron Device Enllineering Council.
`JEIDA-Japanese Electronics Industry Development Association.
`PCMCIA-Personal Computer Memory Card International Association.
`'Micron's Quality/Reliability Handbook is available by calling (208) 368-3900.
`
`'"REFACE
`~EV.419.2
`
`v
`
`Micron Technology, Inc .. reserves the right to change products or specifications without notice.
`©1992, Micron Technology, Inc.
`AMBY)(TM is a trademark of Micron Techl'lOlogy, Inc.
`
`XILINX EXHIBIT 1017
`Page 10
`
`

`

`MIC:RON
`1-·
`
`"'""<OG""
`
`PREFACE
`GENERAL INFORMATION
`
`EXPANDED COMPONENT NUMBERING SYSTEM
`
`ZZ ZZ
`FFF -GG
`AA BB CC DODD
`-.L..L-L
`--Ll.~ I
`MT4C42560J-8 VL
`
`g~~~ I TT~
`
`Low Voltage, Low Power (Extended Refresh)
`80ns Access Time
`SOJ Package
`
`256K x 4
`
`.
`
`AA - PRODUCT LINE IDENTIFIER
`Component Product .......................................................... MT
`
`BB - PRODUCT FAMILY
`DRAM .................................................................................. 4
`DPDRAM ............................................................................ 42
`TPDRAM ............................................................................ 43
`SRAM ................................................................................... 5
`FIFO ................................................................................... 52
`Cache Data SRAM .............................................................. 56
`Synchronous SRAM ........................................................... 58
`
`CC - PROCESS TECHNOLOGY
`CMOS .................................................................................. C
`Low Voltage CMOS ............................................................ LC
`
`DODD - DEVICE NUMBER
`(Can be modified to indicate variations)
`DRAM ............................................................. Width, Density
`DPDRAM ......................................................... Width, Density
`TPDRAM ......................................................... Width, Density
`SRAM .......................................................... Total Bits, Width
`CACHE ............................................................ Density, Width
`Latched SRAM ............................................. Total Bits, Width
`FIFO ............................................................. Width, Total Bits
`Synchronous SRAM ........................................ Density, Width
`E - DEVICE VERSIONS
`(Alphabetic characters only; located between 0 and F when
`required)
`JEDECTest Mode (4 Meg DRAM) ........................................ J
`Errata on Base Part .............................................................. Q
`
`FFF - PACKAGE CODES
`PLASTIC
`DIP ............................................................................. Blank
`DIP (Wide Body) .............................................................. W
`ZIP .................................................................................... Z
`LCC ................................................................................. EJ
`SOP/SOIC ....................................................................... SG
`
`FFF - PACKAGE CODES (continued)
`QFP ................................................................................. LG
`TSOP (Type II) ................................................................ TG
`TSOP (Reversed) ........................................................... RG
`TSOP (Longer) ................................................................ TL
`SOJ ................................................................................. DJ
`SOJ (Reversed) .............................................................. DR
`SOJ (Longer) .................................................................. DL
`DIE
`Die ................................................................................ XDC
`Wafer .......................................................................... XWC
`Military Die ..................................................................... XD
`Military Wafer ................................................................ XW
`Ceramic
`DIP ................................................................................... C
`DIP (Narrow Body) ......................................................... CN
`DIP (Wide Body) ............................................................ CW
`LCC ................................................................................. EC
`LCC (Narrow Body) ...................................................... ECN
`LCC (Wide Body) ......................................................... ECW
`SOP/SOIC ....................................................................... CG
`SOJ ............................................................................... DCJ
`PGA ................................................................................ CA
`FLAT PACK ........................................................................ F
`
`GG - ACCESS TIME
`-5 ...................................................................... 5ns or 50ns
`-6 ...................................................................... 6ns or 60ns
`-7 ...................................................................... 7ns or 70ns
`-8 ................................ ~ ..................................... 8ns or 80ns
`-10 .................................................................. 10ns or 100ns
`-12 .................................................................. 12ns or 120ns
`-15 .................................................................. 15ns or 150ns
`-17 ................................................................................. 17nsl
`-20 ................................................................................. 20ns
`-25 ................................................................................. 25ns
`-35 ................................................................................. 35ns
`-45 ................................................................................. 45ns
`-50 (SRAM only) ............................................................ 50ns
`-53 ................................................................................. 53ns
`
`PREFACE
`REV 4192
`
`vi
`
`Micron T acilnology, Inc., reserves the right to change products or specifications without notice.
`©1992, Micron Technology, Inc.
`
`XILINX EXHIBIT 1017
`Page 11
`
`

`

`MICRON
`1-·
`
`""'.owe",,,
`
`PREFACE
`GENERAL INFORMATION
`
`EXPANDED COMPONENT NUMBERING SYSTEM (continued)
`
`ZZ ZZ
`FFF -GG
`AA BB CC DODD
`--L..l....--'(cid:173)
`-L.L.J.
`I
`MT4C42560J-8 VL
`
`~ITT~
`
`Low Voltage, Low Power (Extended Refresh)
`BOns Access Time
`SOJ Package
`
`Micron
`DRAM
`CMOS
`256Kx 4
`
`GG - ACCESS TIME (continued)
`-55 ................................................................................. 55ns
`-70 (SRAM only) ............................................................ 70ns
`
`ZZ ZZ - PROCESSING CODES
`(Multiple processing codes are separated by a space and are
`listed in hierarchical order).
`Example:
`A DRAM supporting low power, extended refresh (L); low voltage
`(V) and the Industrial temperature range (IT) would be Indicated as:
`V L
`IT
`Interim .................................................................................. 1
`Low Voltage ......................................................................... V
`DRAMS
`Low Power (Extended Refresh) ......................................... L
`Low Voltage, Low Power (Extended Refresh) ................. VL
`Low Power (Self Refresh) ................................................. S
`Low Voltage, Low Power (Self Refresh) ......................... VS
`SRAMS
`Low Volt Data Retention ................................................... L
`Low Power ........................................................................ P
`Low Power, Low Volt Data Retention .............................. LP
`Low Voltage, Low Power ................................................ VP
`
`zz ZZ - PROCESSING CODES (continued)
`Low Voltage, Low Volt Data Retention ............................ VL
`Low Voltage, Low Volt Data Retention,
`Low Power ..................................................................... VB
`EPI Wafer ............................................................................. E
`Commercial Testing
`O°C to + 70°C .............................................................. Blank
`-40°C to +85°C ................................................................ IT
`-40°C to + 125°C ............................................................. AT
`-55°C to + 125°C ............................................................. XT
`MIL-STD-883C Testing
`-55°C to + 125°C ......................................................... 883C
`-55°C to + 110°C (DRAMs) .......................................... 883C
`O°C to +70°C .............................................................. M070
`Special Processing
`Engineering Sample ........................................................ ES
`Mechanical Sample ........................................................ MS
`Sample Kit* .................................................................... SK
`Tape and Reel* ............................................................... TR
`Bar Code* ....................................................................... BC
`
`• Used in device order codes; this code is not marked on device.
`
`PREFACE
`REV. 4192
`
`vii
`
`Micron Technology, Inc., reserves the right to change products or specifications loVithout notloe.
`@1992,MicronTechnology,lnc.
`
`XILINX EXHIBIT 1017
`Page 12
`
`

`

`MIC::RON
`1-·
`"c,",,,,,n,,
`
`PREFACE
`GENERAL INFORMATION
`
`"
`NEW COMPONENT NUMBERING SYSTEM
`
`ZZ zz
`AA BB CC DDDDDD
`FFF -GG
`EE
`--L-L...L-L
`-L..L..L
`I
`MT4C1M16A1DJ~ VL
`
`I II I 11T ~ Low Voltage, L?w Power (Extended Refresh)
`
`Micron,
`DRAM
`CMOS
`1 Meg x 16
`
`-
`
`-
`
`BOns Access TIme
`SOJ Package
`Data Sheet Defined
`
`AA - PRODUCT LINE IDENTIFIER
`Component Product .......................................................... MT
`
`BB - PRODUCT FAMILY
`DRAM .................................................................................. 4
`DPDRAM ............................................................................ 42
`TPDRAM ............................................................................ 43
`Synchronous DRAM .......................................................... 48
`SRAM ................................................................................... 5
`FIFO ................................................................................... 52
`Latched SRAM ................................................................... 56
`Synchronous SRAM ... ; ....................................................... 58
`
`CC - PROCESS TECHNOLOGY
`CMOS .................................................................................. C
`Low Voltage CMOS ............................................................ LC
`
`DDDDDD - DEVICE NUMBER
`Depth, Width
`Example:
`IM16 = 1 Megabit deep by 16 bits wide = 16 Megabits of total
`memory
`No Letter .......................................................................... Bits
`K ................................................................................. Kilobits
`M ............................................................................. Megabits
`G ............................................................................... Gigabits
`EE - DEVICE VERSIONS
`(The first character is an alphabetic character only; the
`second character i,s a numeric character only.)
`Specified by individual data sheet
`
`FFF - PACKAGE CODES
`Plastic
`DIP ............................................................................. Blank
`DIP (Wide Body) .............................................................. W
`ZIP .................................................................................... Z
`LCC ................................................................................. EJ
`SOP/SOIC ....................................................................... SG
`
`FFF - PACKAGE CODES (continued)
`QFP ................................................................................. LG
`TSOP (Type II) ................................................................ TG
`TSOP (Reversed) ........................................................... RG
`TSOP (Longer) ................................................................ TL
`SOJ ................................................................................. DJ
`SOJ (Reversed) .............................................................. DR
`SOJ (Longer) .................................................................. DL
`DIE
`Die ................................................................................ XDC
`Wafer .......................................................................... XWC
`Military Die ..................................................................... XD
`Military Wafer ................................................................ XW
`CERAMIC
`DIP ................................................................................... C
`DIP (Narrow Body) ......................................................... CN
`DIP (Wide Body) ............................................................ CW
`LCC (Narrow Body) ...................................................... ECN
`LCC ................................................................................. EC
`LCC (Wide Body) ......................................................... ECW
`SOP/SOIC ....................................................................... CG
`SOJ ............................................................................... DCJ
`PGA ................................................................................ CA
`FLAT PACK ........................................................................ F
`
`GG - ACCESS TIME
`-5 ...................................................................... 5ns or 50ns
`-6 ............. '" ...................................................... 6ns or 60ns
`-7 ...................................................................... 7ns or 70ns
`-8 ...................................................................... 8ns or 80ns
`-10 .................................................................. 10ns or 100ns
`-12 .,', .. , .... ,""', ... ,"', ..... ,', ......... , ....... " ...... "", .. 12ns or 120ns
`-15 .................................................................. 15ns or 150ns
`-17 ................................................................................. 17ns
`-20 ........... , ......... ,', ............ " ....... " ...... ""' .... ' ........ , ......... 20ns
`-25 " ......... " ........ " ......... , .... , ..... ,'" ......... " ...................... , 25ns
`-35 .. ,'," ................................... ,', ..... ,', ..... " ..................... 35ns
`-45 ... " .................................... ,"' ...... , ....... , .................... ' 45ns
`-50 (SRAM only) ............................................................ 50ns
`
`PREFACE
`REV. 4192
`
`viii
`
`Micron TechnolGQY, Inc., reserves the right to change products or specifications without notice.
`©1992,MicronTechnology, Inc.
`
`XILINX EXHIBIT 1017
`Page 13
`
`

`

`MIC:RON
`1-·
`
`"""0<,,",,,
`
`PREFACE
`GENERAL INFORMATION
`
`NEW COMPONENT NUMBERING SYSTEM (continued)
`
`FFF -GG ZZ ZZ
`AA BB CC 000000 EE
`-L..L-L
`-L-L-L-L
`I
`MT4C1M16A1DJ-8 VL
`
`I II I 1 1T ~ Low Voltage, L~w Power (Extended Refresh)
`
`Micron
`DRAM
`CMOS
`1 Meg x 16
`
`-
`
`-
`
`80ns Access Time
`SOJ Package
`Data Sheet Defined
`
`GG - ACCESS TIME (continued)
`-53 ................................................................................. 53ns
`-55 ................................................................................. 55ns
`-70 (SRAM only) ............................................................ 70ns
`
`ZZ ZZ - PROCESSING CODES
`(Multiple processing codes are separated by a space and are
`listed in hierarchical order.)
`Example:
`A DRAM supportIng low power, extended refresh (L); low voltage
`(V) and the Industrial temperature range (IT) would be indicated as:
`V L IT
`'Interim .................................................................................. 1
`Low Voltage ..... , ................................................................... V
`DRAMs
`Low Power (Extended Refresh) ......................................... L
`Low Voltage, Low Power (Extended Refresh) ................. VL
`Low Power (Self Refresh) ................................................. S
`Low Voltl!ge, Low Power (Self Refresh) ......................... VS
`SRAMs
`Low Volt Data Retention ................................................... L
`Low Power ........................................................................ P
`Low Power, Low Volt Data Retention .............................. LP
`Low Voltage, Low Power ................................................ VP
`
`ZZ ZZ - PROCESSING CODES (continued)
`Low Voltage, Low Volt Data Retention ............................ VL
`Low Voltage, Low Volt Data Retention,
`Low Power ..................................................................... VB
`EPI Wafer ..................................................... , ....................... E
`Commercial Testing
`O°C to + 70°C .............................................................. Blank
`-40°C to +85°C ................................................................ IT
`-40°C to + 125°C ............................................................. AT
`-55°C to + 125°C ............................................................. XT
`MIL -STD-883C Testing
`-55°C to + 125°C ......................................................... 883C
`-55°C to + 110°C (DRAMs) .......................................... 883C
`O°C to + 70°C .............................................................. M070
`Special Processing
`Engineering Sample ........................................................ ES
`Mechanical Sample ........................................................ MS
`Sample Kit' .................................................................... SK
`Tape and Reel' ............................................................... TR
`Bar Code' ....................................................................... BC
`• Used in device order codes; this code is not marked on device.
`
`PREFACE
`REV. 4192
`
`ix
`
`Micron Technology, Inc., reserves the rlght to change products or specifications withoLrl notice.
`©1992,Micron Technology, Inc.
`
`XILINX EXHIBIT 1017
`Page 14
`
`

`

`MICRON
`1-·
`
`;U"'W'A<C,
`
`PREFACE
`GENERAL INFORMATION
`
`MODULE NUMBERING SYSTEM
`
`BB C DDDEE F GG HH
`AA
`-L -LJ...-1....L J.....L-L
`MT12D136GL-7
`Micron ~TTJTTTT
`
`12 Components
`DRAM Module
`1 Meg
`
`1-_ _ _ _ _
`' - - - - - - - -
`
`70ns Access Time
`Low Power (Extended Refresh)
`Gold Plating
`x36
`
`AA - PRODUCT LINE IDENTIFIER
`Micron Technology Component Product ................ MT
`
`GG - SPECIAL DESIGNATOR
`Low Power ................................................................. L
`
`BB - NUMBER OF MEMORY COMPONENTS
`
`C-RAM FAMILY
`SRAM ........................................................................ 8
`DRAM ........................................................................ D
`
`DDD-DEPTH
`
`EE-WIDTH
`
`F - PACKAGE CODE
`DIP ............................................................................ D
`Gold Plate ................................................................. G
`ZIP ............................................................................. Z
`SiP ............................................................................. N
`SIMM ......................................................................... M
`
`HH - ACCESS TIME
`-10 ......................................................... 10ns or 100ns
`-15 ........................................................................ 15ns
`-20 ........................................................................ 20ns
`-25 ...................................