`Document Description: Power of Attorney
`
`
`PTO
`
`lA /82B (07-13)
`
`
`Approved for use through 01/3112015. O MB '0651-00 35
`U.S. Patent and Trademark Office: U.S. DEPARTMENT OF COMMERCE
`Under the Paperwork Reduction Act of 1.965, no persons are required to respond to a collection of infoirnation unless it displays a valid OMEi control number
`
`POWER OF ATTORNEY BY APPLICANT
`
`WWWW.
`
`
`
`
`
`wuuwwwwww.WWWWW
`
`. ,
`
`WNW,
`
`I hereby revoke all previous powers of attorney given in the application identified in erthei: tne attached transmittal letter or .
`the boxes below.
`
`......WWWWWWWWCW,........WWWWWWWWWVWWWN.WWWWWYWWW.WW
`
`Application Number
`
`Filing Date
`
`(Note: The boxes above may be left blank if information is provided on form PTO/AIA/82A.)
`
`I hereby appoint the Patent Practitioner(s) associated with the following Customer Number as my/our attorney(s) or agent(s), and
`to transact all business in the United States Patent and Trademark Of€ice connected therewith for the application referenced in
`the attached transmittal letter (form PTOIAIA/82A) or identified above:
`
`15114
`
`O R
`
`I hereby appoint Practitioner(s) named in the attached list (form PTO/A AIEJ2C) as mylour attorney(s) or agent(s), and to transact
`all business in the United States Patent and Trademark Office connected therewith for the patent application referenced in the
`attached transmittal letter (form PTO/AIA/82A) or identified above. (Note: Complete form PTO/AIA/82C.)
`
`WWWW WWWWW,
`
`Please recognize or change the correspondence address for the application identified in the attached transmittal
`letter or the boxes above to:
`The address associated with the above-mentioned Customer Number
`OR
`The address associated with Customer Number: 1
`
`OR
`Firm or
`Individual Narne
`
`Address
`City
`Country
`Telephone
`
`State
`
`
`
`
`
`I Zip
`
`T Email
`
`I am the Applicant (if the Applicant is a juristic entity, list the Applicant name in the box).
`
`Netlist, Inc.
`
`Inventor or Joint Inventor (title not required below)
`
`I I
`
`Legal Representative of a Deceased or Legally Incapacitated Inventor (title not required below)
`Assignee or Person to Whom the Inventor is Under an Obligation to Assign (provide signer's title if app€icant is a juristic entity)
`Person Who Otherwise Shows Sufficient Proprietary €nterest (e.g., a petition under 37 CFR 1.46(b)(2) was granted in the
`application or is concurrent€y being fi€ed with this documentLaovide signer's title if applicant is a juristic entity)
`SIGNATURE of Applicant for Patent
`hose title is suppl€ed belmais authorized to act on behalf of the applicant e.g.. where the applicant is 3 juristic entity).
`:',s7
`Date (Optional)
`;.>
`
`The undersigned
`Signature
`Name
`Tit€e
`t ez:v.t .fN
`NOTE: Signature This form must be signed by the applicanniaccorthance with 37 CFR 1.33. See 37 CFR 1.4€ for signature requirements
`and certifications. It more than one app€icant, use multiple forms.
`
`Vitsi
`
`:rt
`
`TTotal of
`
`forms are submitted.
`This collection of information is required by 37 CFR 1.131, 1.32, and 1.33. The infortnaffon is required to obtain or retain a benefit by the public which is to file (and by the
`USPTO to process) an application. Confidentiality is governed by 35 U.S.C. 122 and 37 CFR 1.11 and 1.14. This collection is estimated to take 3 minutes to complete,
`including gathering, preparing, and submitting the completed application form to the USPTO. Time will vary depending upon the individual case. Any comments on the amount
`of time you require to complete this tom and/or suggestions. for reducing this burden, should he sent to the Chief Information Officer, U.S. Patent and Trademark Office, U.S.
`Department of Commerce, P.O. Box 1450, Alexandria, VA 22313-1450. DO NOT SEND PEES OR COMPLETED FOR S. TO THIS. ADDRESS. SEND TO: Commissioner
`for Patents, P.D. Box 1450, Alexandria, VA 223134450.
`If you need assistance in completing the form, call 1-800-PTO-9199 and select option .2.
`
`xxxvco.x.....WMONCOODOnixo..N.
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 1
`
`
`
`PTO/AIA/01 (06-12)
`Approved for use through 01/31/2014. OMB 0651-0032
`U.S. Patent and Trademark Office; U.S. DEPARTMENT OF COMMERCE
`Under the Paperwork Reduction Act of 1995, no persons are required to respond to a collection of information unless it displays a valid OMB control number.
`
`C DECLARATION (37 CFR 1.63) FOR UTILITY OR DESIGN APPLICATION USING AN
`APPLICATION DATA SHEET (37 CFR 1.76)
`
`Title of
`Invention
`
`FLASH-DRAM HYBRID MEMORY MODULE
`
`
`
`As the below named inventor, I hereby declare that:
`
`This declaration
`is directed to:
`
`The attached application, or
`United States application or PCT international application number 14/489269
`filed on September 17, 2014
`
`The above-identified
`
`application was made or authorized to be made by me.
`
`I believe that
`I am the original inventor or an original joint inventor of a claimed invention in the application.
`
`I hereby acknowledge
`that any willful false statement made in this declaration is punishable under 18 U.S.C. 1001
`by fine or imprisonment
`of not more than five (5) years, or both.
`
`WARNING:
`Petitioner/applicant is cautioned to avoid submitting personal information in documents filed in a patent application that may
`
`contribute to
`identity theft. Personal information such as social security numbers, bank account numbers, or credit card numbers
`(other than a
`check or credit card authorization form PTO-2038 submitted for payment purposes) is never required by the USPTO
`to support a
`petition or an application. If this type of personal information is included in documents submitted to the USPTO,
`petitioners/applicants
`should consider redacting such personal information from the documents before submitting them to the
`USPTO. Petitioner/applicant
`is advised that the record of a patent application is available to the public after publication of the
`application (unless
`a non-publication request in compliance with 37 CFR 1.213(a) is made in the application) or issuance of a
`patent. Furthermore,
`the record from an abandoned application may also be available to the public if the application is
`
`referenced in a published application or an issued patent (see 37 CFR 1.14). Checks and credit card authorization forms
`PTO-2038 submitted
`for payment purposes are not retained in the application file and therefore are not publicly available.
`
`LEGAL NAME OF INVENTOR
`
`Jeffrey C. Sdl
`7 t
`
`Inventor:
`
`Signature:
`
`n
`
`-
`
`, i
`
`Date (Optional)
`
`Note: An application data sheet (PTO/SB/14 i? equivalent), including naming the entire inventive entity, must accompany this form or must have
`been previously filed. Use an additional PTO AIA/01 form for each additional inventor.
`
`This collection of information is required by 35 U.S.C. 115 and 37 CFR 1.63. The information is required to obtain or retain a benefit by the public which is to file (and
`by the USPTO to process) an application, Confidentiality is governed by 35 U.S.C. 122 and 37 CFR 1.11 and 1.14. This collection is estimated to take 1 minute to
`complete, including gathering, preparing, and submitting the completed application form to the USPTO. Time will vary depending upon the individual case. Any
`comments on the amount of time you require to complete this form and/or suggestions for reducing this burden, should be sent to the Chief Information Officer, U.S.
`Patent and Trademark Office, U.S. Department of Commerce, P.O. Box 1450, Alexandria, VA 22313-1450. DO NOT SEND FEES OR COMPLETED FORMS TO
`THIS ADDRESS. SEND TO: Commissioner for Patents, P.O. Box 1450, Alexandria, VA 22313-1450.
`If you need assistance in completing the form, call 1-800-PTO-9199 and select option 2.
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 2
`
`
`
`RTO/AlAI91 (06-12)
`Approved for use through 01131!2014. OME 0051-0032
`U S. Patent and Trademark Office; U.S. DEPARTMENT OF COMMERCE
`Linder the Paperwork Reduction Act of 1995, no persons are required to respond to a collection of information unless it displays a valid OMB control number.
`
`DECLARATION (37 CFR 1.63) FOR UTILITY OR DESIGN APPLICATION USING AN
`APPLICATION DATA SHEET (37 CFR 1.76)
`
`Title of
`Invention
`
`FLASH DRAM HYBRID MEMORY MODULE
`
`As the below named inventor, hereby dec€are that:
`
`This declaration
`is directed to:
`
`I
`
`I
`
`The attached application, or
`United States application or PCT international application number 14/489269
`filed on September 17, 2014
`
`The above-identified application was made or authorized to be made by me.
`
`€ believe that I am the original inventor or an original joint inventor of a claimed invention in the application.
`
`I hereby acknowledge that any willful false statement made in this declaration is punishable under 18 U.S.C. 1001
`by fine or imprisonment of not more than five (5) years, or both.
`
`WARNING:
`Petitioner/applicant is cautioned to avoid submitting personal information in documents filed in a patent application that may
`contribute to identity theft. Persona€
`information such as social security numbers, bank account numbers, or credit card numbers
`(other than a check or credit card authorization form PTO-2038 submitted for payment purposes) is never required by the USPTO
`to support a petition or an application. If this type of personal information is included in documents submitted to the USPTO,
`petitioners/applicants should consider redacting such personal information from the documents before submitting them to the.
`USPTO. Petitioner/applicant is advised that the record of a patent app€ication
`is available to the public after publication of the
`application (unless a non-publication request in compliance with 37 CFR 1.213(a) is made in the app€ication) or issuance of a
`patent. Furthermore, the record from an abandoned application may also be available to the public if the application is
`referenced in a published application or an issued patent (see 37 CFR 1.14). Checks and credit card authorization forms
`P1O-2038 submitted for payment purposes are not retained in the application file and therefore are not publicly available.
`
`LEGAL NAME OF INVENTOR
`
`inventor: Scott H. Milton
`$
`.
`
`Signature:
`
`•
`-4-
`
`
`
` Date (0ptiona€)
`
`Note'. An app€ication data sheet ;PTO/SS/14 or equivalent), including naming the entire inventive entity, must accompany this form or must have
`been previously f€ed. Use an additional PTO/ALA/O1 form for each additional inventor.
`
`This collection of information is required by 35 U.S.C. 115 and 37 CFR 1.53. The information is required to obtain or retain a benefit by the public which is to file {and
`by the USPTO to processt an application. Confidentiality is governed by 35 U.S.0 122 and 37 CFR 1.11 and 1 14. This collection is estimated to take 1 minute to
`complete, Including gathering, preparing, and submitting the completed application form to the USPTO. lime will vary depending upon the individual case. Any
`comments on the amount of time you require to complete this form and/or suggestions for reducing this burden, should be sent to the Chief information Officer, U.S.
`Patent and Trademark Office, U S. Department of Commerce. P.O. Sox 1450, Alexandria, VA 22313-1450. DO NOT SEND FEES OR COMPLETED FORMS TO
`THIS ADDRESS. SEND TO: Commissioner for Patents, P.O. Box 1450, Alexandria, VA 223134450,
`If you need assistance in completing the form, cart 1-000,PTO-9199 and select option 2.
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 3
`
`
`
`PTO/AIA/01 (06-12)
`Approved for use through 01/31/2014. OMB 0651-0032
`U.S. Patent and Trademark Office; U.S. DEPARTMENT OF COMMERCE
`Under the Paperwork Reduction Act of 1995, no persons are required to respond to a collection of information unless it displays a valid OMB control number.
`
`C DECLARATION (37 CFR 1.63) FOR UTILITY OR DESIGN APPLICATION USING AN
`APPLICATION DATA SHEET (37 CFR 1.76)
`
`Title of
`Invention
`
`FLASH-DRAM HYBRID MEMORY MODULE
`
`
`
`As the below named inventor, I hereby declare that:
`
`This declaration
`is directed to:
`
` i I
`
`
`I The attached application, or
`Ill United States application or PCT international application number 14/489269
`filed on September 17, 2014
`
`
`
`The above-identified application was made or authorized to be made by me.
`
`
`
`I believe that I am the original inventor or an original joint inventor of a claimed invention in the application.
`
`I hereby acknowledge
`that any willful false statement made in this declaration is punishable under 18 U.S.C. 1001
`by fine or imprisonment
`of not more than five (5) years, or both.
`
`WARNING:
`Petitioner/applicant is cautioned to avoid submitting personal information in documents filed in a patent application that may
`
`
`contribute to identity theft. Personal information such as social security numbers, bank account numbers, or credit card numbers
`(other than a
`check or credit card authorization form PTO-2038 submitted for payment purposes) is never required by the USPTO
`to support a
`petition or an application. If this type of personal information is included in documents submitted to the USPTO,
`petitioners/applicants
`should consider redacting such personal information from the documents before submitting them to the
`
`USPTO. Petitioner/applicant is advised that the record of a patent application is available to the public after publication of the
`application (unless
`a non-publication request in compliance with 37 CFR 1.213(a) is made in the application) or issuance of a
`patent. Furthermore,
`the record from an abandoned application may also be available to the public if the application is
`
`referenced in a published application or an issued patent (see 37 CFR 1.14). Checks and credit card authorization forms
`PTO-2038 submitted
`for payment purposes are not retained in the application file and therefore are not publicly available.
`
`LEGAL NAME OF INVENTOR
`
`Inventor: Hyun Lee
`
`Signature:
`
`Date (Optional) :
`
`--._____
`
`Note: An application data sheet (PTO/SB/14 or equivalent), including naming the entire inventive entity, must accompany this form or must have
`been previously filed. Use an additional PTO/AIA/01 form for each additional inventor.
`
`This collection of information is required by 35 U.S.C. 115 and 37 CFR 1.63. The information is required to obtain or retain a benefit by the public which is to file (and
`by the USPTO to process) an application. Confidentiality is governed by 35 U.S.C. 122 and 37 CFR 1.11 and 1.14. This collection is estimated to take 1 minute to
`complete, including gathering, preparing, and submitting the completed application form to the USPTO. Time will vary depending upon the individual case. Any
`comments on the amount of time you require to complete this form and/or suggestions for reducing this burden, should be sent to the Chief Information Officer, U.S.
`Patent and Trademark Office, U.S. Department of Commerce, P.O. Box 1450, Alexandria, VA 22313-1450. DO NOT SEND FEES OR COMPLETED FORMS TO
`THIS ADDRESS. SEND TO: Commissioner for Patents, P.O. Box 1450, Alexandria, VA 22313-1450.
`If you need assistance in completing the form, call 1-800-PTO-9199 and select option 2.
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 4
`
`
`
`PTOIAIA/01 (06-121
`Approved for use through 01/3112014. °NIB 0851-0032
`U.S. Patent and Tractemark. Office: U.S. DEPARTMENT OF COMMERCE
`Under the Paperwork Reduction Act of 1965, no persons are required to respond to a collection of information unless it rdisplays a valid OMB control number.
`
`DECLARATION (37 CFR 1.63) FOR UTILITY OR DESIGN APPLICATION USING AN
`APPLICATION DATA SHEET (37 CFR 1.76)
`
`Tit€e of
`Invention
`
`FLASH-DRAM HYBRID MEMORY MODULE
`
`As the below named inventor, I hereby dec€are
`
`that:
`
`This dec€aration
`is directed to:
`
`I€
`
`The attached application,. or
`
`489269
`United States app€€cation or PCT international application number 14/
`fi€ed on September 17, 2014
`
`The .above-identified app€ication was made or authorized to be made by me.
`
`€ believe that am the original inventor or an original joint inventor of a claimed invention in the application.
`
`hereby acknow€edge that any willful fa€se statement made in this declaration is punishab€e under 18 U.S.C. 1001
`by fine or imprisonment of not more than five (5) years, or both.
`
`WARNING:
`Petitioner/applicant is cautioned to avoid submitt€ng personal information in documents filed in a patent application that may
`contribute to identity theft. Persona€
`information such as social security numbers, bank account numbers, or credit card numbers
`(other than a check or credit card authorization form PTO-2038 submitted for payment purposes) is never required by the USPTO
`to support a petition or an application. €f this type of persona€
`information is included in documents submitted to the USPTO,
`petitioners/applicants should consider redacting such personal information from the documents before submitting them to the
`USPTO. Petitioner/applicant is advised that the record of a patent app€ication
`is available to the public after publication of the
`app€ication (unless a non-publication request in compliance with 37 CFR 1.213(a) is made in the application) or issuance of a
`patent. Furthermore, the record from an abandoned application may also be available to the public if the application is
`referenced in a published application or an issued patent (see 37 CFR 1.14). Checks and credit card authorization forms
`PTO-2038 submitted for payment purposes are not retained in the application file and therefore are not publicly available.
`
`LEGAL NAME OF INVENTOR
`
`Inventor: Jayesh Bhakta
`
`Signature:
`
`............
`
`........
`
`
`
` Date (Optiera€)
`
`*-77
`
`Note: An application data sheet (PTO/SB/14 or equivalent), including naming the entire inventive entity, must accompany this form or must have
`been previously filed. Use an additional PrO/A1A/01 form for each additional inventor.
`
`This (toile:lion of information is required by 35 U.S.C. 115 and 37 CFR 1.63. The information is required to obtain or retain a benefit by the public which is to file land
`by the USPTO to process) an application. Confidentiality is governed by 35 U.S.C. 122 and 37 CFR 1.11 and 1.14. This collection is estimated to lake 1 minute to
`complete, including gathering, preparing, and submitting the completed application form to the USPTO Time will vary depending upon the individual case. Any
`comments on the amount of time you require to complete this form andlor suggestions for reducing this burden, should be sent to the Chief Information Officer, U.S.
`Patent and Trademark Office, U.S. Department of Commerce, P.O. Box 1450, Alexandria, VA 22313-1450. DO NOT SEND FEES OR COMPLETED FORMS TO
`TI-PS ADDRESS. SEND TO:. Commissioner for Patents, P.O. Box 1450, Alexandria, VA 22313-1450.
`If you need assistance in completing the form, calf 1-4300-PTO-9199 and select option 2..
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 5
`
`
`
`PTO/AIA/01 (06-12)
`Approved for use through 01/31/2014. OMB 0651-0032
`U.S. Patent and Trademark Office; U.S. DEPARTMENT OF COMMERCE
`Under the Paperwork Reduction Act of 1995, no persons are required to respond to a collection of information unless it displays a valid OMB control number.
`
`C DECLARATION (37 CFR 1.63) FOR UTILITY OR DESIGN APPLICATION USING AN
`APPLICATION DATA SHEET (37 CFR 1.76)
`
`Title of
`Invention
`
`FLASH-DRAM HYBRID MEMORY MODULE
`
`
`
`As the below named inventor, I hereby declare that:
`
`This declaration
`is directed to:
`
`The attached application, or
`United States application or PCT international application number 14/489269
`filed on September 17, 2014
`
`The above-identified
`
`application was made or authorized to be made by me.
`
`
`
`I believe that I am the original inventor or an original joint inventor of a claimed invention in the application.
`
`I hereby acknowledge
`that any willful false statement made in this declaration is punishable under 18 U.S.C. 1001
`
`by fine or imprisonment of not more than five (5) years, or both.
`
`WARNING:
`Petitioner/applicant is cautioned to avoid submitting personal information in documents filed in a patent application that may
`
`contribute to
`identity theft. Personal information such as social security numbers, bank account numbers, or credit card numbers
`(other than a
`check or credit card authorization form PTO-2038 submitted for payment purposes) is never required by the USPTO
`to support a
`petition or an application. If this type of personal information is included in documents submitted to the USPTO,
`
`petitioners/applicants should consider redacting such personal information from the documents before submitting them to the
`USPTO. Petitioner/applicant
`is advised that the record of a patent application is available to the public after publication of the
`application (unless
`a non-publication request in compliance with 37 CFR 1.213(a) is made in the application) or issuance of a
`patent. Furthermore,
`the record from an abandoned application may also be available to the public if the application is
`referenced in
`a published application or an issued patent (see 37 CFR 1.14). Checks and credit card authorization forms
`PTO-2038 submitted
`for payment purposes are not retained in the application file and therefore are not publicly available.
`
`LEGAL NAME OF INVENTOR
`
`Inventor:
`
`Chi-She Chen
`
`Signature:
`
`i.;C-- I
`
`,/-•,-
`
`Date (Optional) : Oc,t-
`
`/ 7 -Z0/4f
`
`Note: An application data sheet (PTO/SB/14 or equivalent), including naming the entire inventive entity, must accompany this form or must have
`been previously filed. Use an additional PTO/AIA/01 form for each additional inventor.
`
`This collection of information is required by 35 U.S.C. 115 and 37 CFR 1.63. The information is required to obtain or retain a benefit by the public which is to file (and
`by the USPTO to process) an application. Confidentiality is governed by 35 U.S.C. 122 and 37 CFR 1.11 and 1.14. This collection is estimated to take 1 minute to
`complete, including gathering, preparing, and submitting the completed application form to the USPTO. Time will vary depending upon the individual case. Any
`comments on the amount of time you require to complete this form and/or suggestions for reducing this burden, should be sent to the Chief Information Officer, U.S.
`Patent and Trademark Office, U.S. Department of Commerce, P.O. Box 1450, Alexandria, VA 22313-1450. DO NOT SEND FEES OR COMPLETED FORMS TO
`THIS ADDRESS. SEND TO: Commissioner for Patents, P.O. Box 1450, Alexandria, VA 22313-1450.
`If you need assistance in completing the form, call 1-800-PTO-9199 and select option 2.
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 6
`
`
`
`data
`
`CP
`
`DRAM DAN
`
`SSD/HD
`
`Data flow path
`
`FIG. 1
`(PRIOR ART)
`
`Non— Volatile DIMM
`
`300
`
`data
`MCH <==>
`
`Control
`
`DRAM Memory
`
`data Rash Memory
`
`304
`
`302
`
`/
`1Controller _-306
`
`FIG. 3A
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 7
`
`
`
`Spansion EcoRAM configurations
`256GB Sponsion EcoRAM Solution — Single Accelerator
`
`Server Motherboard
`Socket F
`Socket F
`ponsion
`Spansion
`DR
`a tor AI
`EcoRAM
`Up to 256 GB DIMMs
`256GB Single Accelerator Spansion EcoRAM Solution
`
`Ec
`
`Accele
`
`ro
`
`DOR2
`
`DRAM
`DIMMs
`
`256GB Spansion EcoRAM Solution — Dual Accelerator
`
`Server Motherboard
`Socket F
`
`Up to 256 GB
`
`Socket F
`oa
`ponsf
`EcoRfril
`Acceiercor TR2
`
`DRAM
`DIMMs
`
`LIDR2
`
`D052
`
`Socket
`
`
`
`panstori
`HyAccefigific,f 00R2
`Socket F
`Up to 256 GB
`
`Sponsion
`EcoRAM
`DIMMs
`
`256GB Single Accelerator Spansion EcoRAM Solution
`FIG. 2
`(PRIOR ART)
`
`408
`
`Control
`
`V
`
`MCH
`
`data
`
`DRAM Memory
`402'
`
`data
`<= 7›
`
`Flash Memory
`404'
`
`410
`
`FDHOIMM
`
`400'
`
`FIG. 4B
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 8
`
`
`
`306'
`INVDIMM
`
`ctrl
`
`300'
`
`Flash
`
`NVDIMM
`
`DRAM
`304'
`
`MCH
`FIG. 3B
`
`404
`
`FDHDIMM
`ctrl
`
`DRAM
`406
`
`MCH
`
`I
`
`. 4A
`
`400
`
`FDHDIMM
`Flash
`402
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 9
`
`
`
`Data 55°
`
`FDHDIMM 556
`
`555
`
`MCH/CPU
`510
`
`C
`
`560
`
`508
`
`-3
`504
`4
` CDC
`
`Flash
`
`506
`
`-/- 502
`
`.5.0S
`
`FIG. 5A
`
`DRAM—A
`508(1)
`
`DRAM—B
`508(2)
`
`Flash
`
`506
`
`CDC
`502
`
`611
`
`/621\ 7622
`A
`a
`A
`
`Data Format
`Buffed 604
`602
`
`504 DMgr
`
`1
`690
`
`610-1'
`
`ARCH
`
`_7-510
`
`FIG. 6
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 10
`
`
`
`Example embodiment
`
`DRAM—B
`508O
`
`Flash
`
`506
`
`DRAM--A
`508—(1)
`
`Mgr
`
`500
`
`CDC
`502
`
`MCH
`
`510
`FIG. 5B
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 11
`
`
`
`502
`
`CDC
`
`Scheduler
`708
`
`CMDInt
`1.26
`
`MCH
`
`Flash
`
`DRAM
`
`DMgr
`
`Flash Ctrl
`704
`
`DRAMCtrl
`202
`
`DMgrCtrl
`710
`
`FIG. 7
`
`592
`
`Ctrl
`
`DRAM
`508
`
`Flash
`506
`
`— controls
`data interface
`
`MCH — controls DRAM
`Commend and address
`
`MCH — controls Flash
`Commend and address
`
`FIG. 8A
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 12
`
`
`
`502
`
`CDC
`
`FDHDIMM
`
`DRAM
`508
`
`Ae"
`
`<1;=>
`
`C:ZJ
`
`IsQ
`
`Flash
`506
`
`504
`
`UCH — command
`control
`
`MCH — Data
`interface
`
`DRAM address CDC — address
`space
`mopping DRAM
`to Flash
`
`Bash Address Address
`
`space
`
`FIG. 8B
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 13
`
`
`
`922
`
`Start (power up
`
`ization
`
`y-902
`
`—904
`
`Load DRAM w/RC
`bpy data from .Fifish
`rge-
`
`.1.5P,44/,-*: y-908
`
`MCH Opens Block (pages)
`and DRAM Access
`
`910
`
`//./t,
`i'/And
`"2
`
`rf
`
`Na
`
`Yes
`//Copy/write data;,•/
`/ back to Flash 4/1/
`
`,
`
`914/
`
`Any page
`e— page
`
`Yes
`
`CDC control
`
`inish data write
`
`-92o
`back to Rash /2/.::--1
`
`•
`
`FIG. 9
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 14
`
`
`
`A17
`
`A6 Al7
`
`A6
`
`RC (x)
`
`1004
`
`24 bit extended memory page address
`Mapping MCH DDR DIMM page
`address to Flash memory
`
`1041
`1031
`A2 AMO
`Ax+1 Ax 419 A8
`Ati-1 Ay
`A23
`Page Address
`LUN Address Block Address
`
`1061
`
`1051
`
`Plane
`address
`
`Flash
`Transfer
`size
`
`FIG. 10
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 15
`
`
`
`# of
`DRAM
`blocks
`density
`per
`(GB)
`bank
`
`Flash
`wr- time to
`rd- time
`ratio
`
`
`
`1
`
`1
`
`1
`
`2
`
`2
`
`2
`
`2
`
`4
`
`4
`
`4
`
`4
`
`250
`
`250
`
`250
`
`250
`
`500
`
`500
`
`500
`
`500
`
`1000
`
`1000
`
`1000
`
`1000
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`55
`
`nosh
`write
`time
`(sec)
`
`btgk
`use
`time
`(sec)
`1.00E-
`03 2,00E-02
`1.00E
`02 200E-02
`2.00E-
`02 200E 02
`5.00E-
`02 280E 02
`1.00E
`03 206T-02
`1.00E-
`02 200E-02
`2.00E-
`02 200E-02
`5 00E-
`02 200E 02
`1,00E-
`03 200E-02
`1.00E-
`02 200E 02
`2.00E-
`02 2 00E 02
`5.00E-
`02 2.00E-02
`
`FIG. 11
`
`Aiax allowed Closed, 8Ik
`in queue to be written
`back to Flash
`
`0
`
`2
`
`5
`
`11
`
`0
`
`5
`
`9
`
`23
`
`1
`
`9
`
`18
`
`45
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 16
`
`
`
`1010
`
`r .1020
`
`1030
`
`1032
`
`DDR2 DDR2 DDR2 DDR2
`64Mx8 64Mx8 54Mx8 64Mx8
`
`DDR2
`64Mx8
`
`DDR2
`64Mx8
`
`DDR2 DDR2
`64Mx8 64Mx8
`
`r
`
`1-
`
`DATA
`
`ADDR/CONT
`
`_J
`
`SWITCH
`
`-1052
`
`1042
`
`,--1040
`
`NAND
`128x
`8
`
`NAND
`128Mx
`8
`
`NAND
`128Mx
`8
`
`NAND
`128Mx
`8
`
`r
`
`FP GA
`
`1O62
`
`10701
`L
`1060-,
`
`POWER
`OUTPUT I
`
`_4090
`
`SWITCH
`
`L
`
`MCU
`
`DATA
`
`ADDR/CONT
`
`DATA
`
`ADDR/CONT
`
`r 1050
`
`STEP
`DOWN
`VOLTAGE
`
`CAPACITOR
`BANK
`
`STEP UP
`VOLTAGE
`
`VOLTAGE
`MONITOR
`
`\ 1084 \ -- 1080 \ 1086
`
`1082
`
`r1022
`
`Standard DIMM interface
`
`FIG. 12
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 17
`
`
`
`1042
`
`r
`
`-1040
`
`r
`
`L
`
`L
`
`4-
`
`J
`
`1062
`
`- -
`1070!
`L
`1060
`
`1-4BUFFER i----+
`
`OUTPUT' r
`POWER I
`
`1090
`
`L
`
`\- -108 -- 1080 \- 1086\-- 1082
`
`FIG. 13
`
`17,-- 1010
`
`( 1020
`
`- 1030
`
`1032
`
`T-
`
`DATA
`
`ADDRICONT
`
`SWITCH
`
`1052
`
`DATA
`
`ADDR/CONT
`
`DATA
`
`ADDINCONT
`
`1050
`
`(1022
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 18
`
`
`
`7 -1042
`
`1040
`
`1010
`
`--- 1030
`
`r
`
` 1020
`
`(1032
`
`1
`
`TT`
`
`T
`
`TT
`
`T -
`
`"1--
`
`L
`
`1060, 1070
`
`BUFFER
`
`POWER
`OUTPUT
`
`1090
`
`1062
`
`DATA
`
`ADDR!CONT
`
`SWITCH
`
`3
`
`-1052
`
`DATA
`ADDR/CONT
`
`DATA
`
`ADDRICONT
`
`1050
`
`\ 10841080
`
`1086 -1082
`
`( 11022
`
`FIG. 14
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 19
`
`
`
`1150
`
`1160
`
`system
`
`address/control
`
`clock
`
`1162
`
`address/control
`
`1170
`
`1180
`
`DRAM
`
`1070
`
`FPGA
`
`1150
`
`1070
`
`system
`
`FPGA
`
`11721.1
`
`FIG. 15A
`
`Vdd
`
`1174
`
`1162
`
`1160
`address/control
`
`dock
`
`addresskontrol
`
`1180
`
`DRAM
`
`1172
`
`FIG. 158
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 20
`
`
`
`Vdd
`
`1160
`
`SYSTEM
`
`address/control
`
`clock
`
`address/control
`
`1170
`
`1150
`
`1070
`
`1180
`
`DRAM
`
`FPGA
`
`1176
`
`FIG. 15C
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 21
`
`
`
`1100
`
`1148
`
`to NVDIMM
`
`Grams
`Rash
`FPGA
`1102
`
`Drams
`Flash
`FPGA
`
`Buck
`Converter
`
`1122''—
`
`1104
`
`Dual Buck
`Reg/Conv
`
`Dev
`Isol
`
`( 1105
`
`1112
`
`1126
`---,BUCK-BOOST
`; CONVERTER
`
`1107
`
`L
`
`FPGA
`
`FPGA
`Isol Dev
`
`P1NM
`Contrir
`
`1130
`
`1140
`
`1110
`
`1120
`
`
`
`from FPGA
`
`1144
`
`1146
`
`r
`
`1142
`
`Voltagel
`Current Limtter
`
`Budd
`Boost
`Cony.
`
`Capacitor
`Array
`
`1108
`
`from
`system
`
`1106
`
`
`
`/
`
`•
`
`Vdd
`
`gnd
`
`L
`
`gnd
`
`Power Module
`FIG. 16
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 22
`
`
`
`1200
`
`1210
`
`Provide first voltage from input power supply
`and second voltage from first power subsystem
`
`1220
`
`No
`
`Second condition detected?
`
`Yes
`
`( 1230
`
`Provide firstvoltage and second voltage from
`first power subsystem
`
`I.. _
`
`-1240
`
`Charge second power subsystem
`
`No
`
`1250
`
`Third condition detected?
`
`Yes
`
`_1260
`
`(
`
`Provide first voltage and second voltage from
`second power subsystem
`
`FIG. 17
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 23
`
`
`
`1300
`
`I
`
`Communicate data between volatile
`memory and host system in a first mode
`
`1310
`
`jE
`
`
`
`Store a first copy of data from the volatile
`memory to the non-volatile memory when
`in a second mode
`
`-1320
`
`t
`
`Restore the first copy of data front the non-
`volatile memory to the volatile memory
`
`1330
`
`1340
`
`1350
`
`Erase the first copy of data from
`the non-volatile memory
`
`Copy second copy of data from
`volatile memory to non-volatile
`memory in a second mode
`
`Restore the second copy of data from the
`non-volatile memory to the volatile memory
`
`1360
`
`FIG. 18
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 24
`
`
`
`1420
`
`200 MHz System Clock
`
`- 1400
`
`1422
`
`1423
`
`1424
`
`Differential dock mux
`
`DRAM PLL
`
`1426
`
`Dram_Cik
`
`
`
`
`
`
`PCLK0 +/-
`Differential dock pairs to
`paxt +/-
`DRAM
` PCLK2 +/-
`PCLK3 +/- (to Register)-x"-1428
`PCLK4 +1- (to FPGA)- 1430
`
`BUCK_125 +/-
`
`1408
`
`DRAM cik Feedback Loop
`CCK
`
`1442
`
`1446
`
`1432'
`
`1440-
`
`1430
`
`PCI.K4 +1-
`
`feedback
`
`PLL
`125
`MHz
`
`DDR2
`CNTLR
`
`1406
`
`Clk125
`
`1434,_
`
`reference
`
`PLL
`200
`MHz
`1436
`
`to FPGA
`command
`logic
`
`1
`
`O4
`
`f4
`
`Clock Generator
`(125MHz)
`
`1402
`
`25 MHz
`Oscillator
`
` to FPGA
`
`,..7-• 1062
`fig V
`1408
`{adjustable)../ -1444
`/
`(backup clock to DRAM PLL)
` BUCK_125+/-
`
`1414
`(
`
`(62.5 MHz to Flash Memory)
`•
`FCLK62P5 1
`FCLK62P5_2
`FCLK62P5 3
`
`
`
`
`
`
`
`
`
` D,
`to FPGA
`master state
`control logic
`1412
`
`1410
`
`1418
`
`FIG. 19
`
`1416-'
`
`x2 cik 1411
`divider
`
`reTerence
`
`PLL
`52.5MHz
`
`feedback
`to FPGA Nand Flash
` Controller Logic
`
`FCK 6P25
`
`F PGA
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 25
`
`
`
`1500
`
`1510
`
`Operate volatile memory at first frequency
`in first mode
`
`1520
`
`1530
`
`Operate non-volatile memory at
`second frequency in second
`mode
`
`Operate volatile memory at
`third frequency in second
`mode
`
`FIG. 20
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 26
`
`
`
`1644
`
`1634
`
`C S # 1
`C S # 2
`
`1632 1630
`/
`
`1062
`
`FPGA
`
`1650
`
`SW1
`
`SW2
`
`DRAM Segment I
`
`DRAM Segment 2
`
`CKe1
`CKe2
`
`1642 1640
`
`1652
`
`1636 1646
`
`FIG. 21
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 27
`
`
`
`1600
`
`Communicate data words between volatile
`memory and host system in first mode
`
`1610
`
`Transfer data words from volatile memory
`system to non-volatile memory system
`
`1620
`
`1622—N_
`
`Store first slice of data word in
`buffer
`
`1624--Ns_
`
`Store second slice of data word in
`buffer
`
`1626—N
`
`Write entire data word from buffer
`to non-volatile memory
`
`FIG. 22
`
`Samsung Electronics Co., Ltd.
`Ex. 1002, p. 28
`
`
`
`Atty Docket No.: 0016.001000H
`
`FLASH-DRAM HYBRID MEMORY MODULE
`
`PRIORITY CLAIM
`
`[0001]
`
`This application is a continuation of U.S. Patent Application No. 15/934,416, filed
`
`March 23, 2018, titled "Flash-Dram Hybrid Memory Module," which is a continuation of U.S.
`
`Patent Application No. 14/840,865, filed August 31, 2015, titled "Flash-Dram Hybrid Memory
`
`Module," now U.S. Patent No. 9,928,186, which is a continuation of U.S. Patent Application No.
`
`14/489,269, filed September 17, 2014, titled "Flash-Dram Hybrid Memory Module," now U.S.
`
`Patent No. 9,158,684, which is a continuation of U.S. Patent Application No. 13/559,476, filed
`
`July 26, 2012, titled "Flash-Dram Hybrid Memory Module," now U.S. Patent No. 8,874,831,
`
`which claims the benefit of U. S. Provisional Patent Application No. 61/512,871, filed July 28,
`
`2011, and is a continuation-in-part of U.S. Patent Application No. 12/240,916, filed September
`
`29, 2008, titled "