`
`Introduction
`With the addition of the clock, synchronous SRAMs are able
`to provide several features that are not possible with asyn-
`chronous SRAMs. These include:
`(cid:127) Controlled timings on outputs
`(cid:127) Different write modes (ADSP /ADSC)
`(cid:127) Reading multiple locations using a single address using
`Burst modes
`One of the more useful features of synchronous SRAMs is the
`burst mode. This application note discusses the different
`burst modes on synchronous SRAMs.
`What is a Burst Mode?
`Synchronous SRAMs are able to provide data from multiple
`address locations with the association of a single address.
`The advantage of this operation is that, by providing a single
`address, data from four locations can be obtained, thereby
`reducing the activity on the address bus.
`Figure 1 shows the signals associated with the burst feature.
`
`Table 1. Definition of Signals
`
`Pin
`Address
`
`CLK
`
`ADV
`
`Mode
`
`Definition
`Address Inputs used to select one of the ad-
`dress locations in the SRAM. Sampled at the
`rising edge of the CLK if ADSP or ADSC is
`active LOW, and CE is sampled active. A[1:0]
`feed the 2-bit counter.
`Clock Input. Used to capture all synchronous
`inputs to the device. Also used to increment
`the burst counter when ADV is asserted
`LOW, during a burst operation.
`Advance Input signal, sampled on the rising
`edge of CLK. When asserted, it automatical-
`ly increments the address in a burst cycle.
`Selects burst order. When tied to GND se-
`lects linear burst sequence.When tied HIGH
`or left floating selects interleaved burst se-
`quence. This is a strap pin and should remain
`static during device operation.
`
`Address
`
`Clk
`
`ADV
`
`Mode
`
`Address Latch
`
`2
`
`2
`
`A0
`
`A1
`
`2-Bit Counter
`
`Upper
`Address
`bits
`
`Lower
`2 Address
`bits
`
`the advance pin is HIGH, or a new cycle is started. If the ADV
`is asserted sufficiently, the SRAM will wrap around to the orig-
`inally accessed address location. This is a result of a 2-bit
`burst counter that can access four address locations.
`The Mode pin controls the order or sequence of the burst.
`Currently, two popular different burst sequences are avail-
`able. Both of them are described below.
`
`CLK =
`
`First
`Address
`
`Second
`Address
`
`Third
`Address
`
`Fourth
`Address
`
`Figure 1. Key Signals for Burst Feature on Typical
`SRAMs
`
`ADV=0
`CLK =
`
`
`ADV=0
`CLK =
`
`ADV=0
`
`CLK =
`
`Table 1 provides the definitions for the signals shown in Figure
`1.
`Function
`On the rising edge of the clock, the address and control pins
`are latched into the SRAM. All accesses for standard syn-
`chronous SRAMs are initiated the same way. Depending on
`the control signals, a read or write transaction is initiated. On
`the next rising edge of the clock, the ADV pin is sampled. If
`ADV is sampled active LOW, a burst access is initiated and
`the SRAM continues the present operation with an address
`obtained from the internal counter. The burst continues until
`
`Figure 2. Burst Mode Address Update
`
`Linear Burst
`If the Mode pin is tied LOW, the device operates in the linear
`method of operation. In the Linear Burst mode of operation,
`the internal counter counts in a linear fashion up from the
`present value with A1 and A0 being the LSBs. This is shown
`in the table below.
`
`Cypress Semiconductor Corporation
`
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`
`3901 North First Street
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`
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`
`408-943-2600
`June 30, 1999
`
`[+] Feedback
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1018, IPR2021-00702
`Page 1 of 2
`
`(cid:127)
`(cid:127)
`(cid:127)
`
`
`Understanding Burst Modes in Synchronous SRAMs
`
`Case 1
`A1 A0
`0
` 0
`
`Case 2
`A1 A0
`0
` 1
`
`Case 3
`A1 A0
`1
` 0
`
`Case 4
`A1
` A0
`1
` 1
`
`0
`
` 1
`
`1
`
` 0
`
`1
`
` 1
`
`1
`
` 0
`
`1
`
` 1
`
`0
`
` 0
`
`1
`
` 1
`
`0
`
` 0
`
`0
`
` 1
`
`0
`
`0
`
`1
`
` 0
`
` 1
`
` 0
`
`First
`Address
`Second
`Address
`Third
`Address
`Fourth
`Address
`
`From an implementation standpoint, this is a simple 2-bit
`counter.
`Interleaved Burst
`If the Mode pin is tied HIGH, the device operates in the inter-
`leaved method of operation.
`In the Interleaved Burst mode of operation, the internal
`counter behaves a bit differently. The sequence in the inter-
`leaved burst is determined by the first address. The sequence
`is shown below.
`
`Case 1
`
`Case 2
`
`Case 3
`
`Case 4
`
`A1 A0
`
`A1 A0
`
`A1 A0
`
`A1
`
` A0
`
`0
`
` 0
`
`0
`
` 1
`
`0
`
`0
`
` 1
`
` 0
`
`1
`
` 0
`
`1
`
` 1
`
`1
`
` 0
`
`1
`
` 1
`
`0
`
` 0
`
`1
`
` 1
`
`1
`
` 0
`
`0
`
` 1
`
`1
`
`1
`
`0
`
`0
`
` 1
`
` 0
`
` 1
`
` 0
`
`First
`Address
`
`Second
`Address
`
`Third
`Address
`
`Fourth
`Address
`
`From an implementation stand point, this is a 2-bit counter
`with some added logic as shown in Figure 3. The 2-bit counter
`is reset on every new address cycle and A0/A1 are the bits
`latched from the start of the cycle. The Interleaved Burst order
`is especially popular with Intel-based systems.
`
`Next A0
`
`Next A1
`
`2 Bit
`Counter
`
`CLK
`
`A0
`
`A1
`
`Figure 3. Implementation to Generate the Interleaved Burst
`Sequence.
`
`Conclusion
`In terms of general operation, one method of burst does not
`have any significant advantages over the other. Different pro-
`cessors support different kinds of bursts. Intel processors
`support the interleaved burst scheme, while the Power PC
`microprocessors support the linear burst mode of operation.
`Burst Modes in Synchronous SRAMs can be very useful. The
`advantages are:
`(cid:127) Reduced activity on the address bus (four memory loca-
`tions accessed with a single address)
`(cid:127) Address generation to the SRAM allowing the controller to
`perform other functions
`(cid:127) More reliable since the address location is generated inside
`the SRAM.
`
`© Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
`of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
`its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
`Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
`
`[+] Feedback
`
`Petitioner STMICROELECTRONICS, INC.,
`Ex. 1018, IPR2021-00702
`Page 2 of 2
`
`