`FOR THE DISTRICT OF DELAWARE
`
`Civil Action No. 19-2090 (NIQA)
`
`MONTEREY RESEARCH, LLC,
`Plaintiff,
`
`vs.
`
`NANYA TECHNOLOGY CORPORATION,
`NANYA TECHNOLOGY CORPORATION,
`U.S.A., and NANYA TECHNOLOGY
`CORPORATION DELAWARE,
`
`Defendants.
`
`NANYA DEFENDANTS’ INITIAL PROPOSED CONSTRUCTIONS
`
`1
`
`IPR2021-00167
`Nanya Technology Corp. v. Monterey Research, LLC
`Monterey Research LLC Exhibit 2001
`Ex. 2001, Page 1
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`
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`Pursuant to the Court’s Scheduling Order Governing (Dkt. 38 at 7), Defendants Nanya
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`Technology Corporation, Nanya Technology Corporation, U.S.A., and Nanya Technology
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`Corporation Delaware (collectively “Nanya”) hereby identify preliminary claim constructions for
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`terms identified by the parties.
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`Nanya reserves the right to modify or supplement these disclosures to facilitate
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`agreement with Monterey, to avoid duplication of terms or phrases, or to reflect newly received
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`information. Furthermore, Nanya reserves the right to modify or supplement its preliminary
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`proposed constructions once it has had an opportunity to review Monterey’s preliminary
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`proposed constructions.
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`Nanya’s list of preliminary proposed constructinos has been compiled in response to
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`Monterey’s November 20, 2020 Preliminary Disclosure of Asserted Claims and Infringement
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`Contentions. To the extent that Monterey may amend its contentions, Nanya reserves the right to
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`modify the preliminary proposed constructions below. Nanya reserves the right to offer evidence
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`and argument regarding the construction of any terms or elements that are identified by
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`Monterey, or to argue for a plain meaning where it is evident that Monterey’s apparent
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`interpretation deviates from that plain meaning.
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`2
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`Ex. 2001, Page 2
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`
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`U.S. Patent Number 6,363,031
`“sleep signal” (cl. 1)
`
`“a Jedec-standard ‘ZZ’
`signal” (cl. 3, 11, 15)
`
`Signal that disables input
`buffers and other current
`sinking elements
`A control input received on
`an input pin configured
`according to a Jedec standard
`to place a Jedec-compliant
`device in a sleep mode.
`“chip select signals” (cl. 11) A chip enable signal
`presented to an input of a
`circuit
`Generating a Jedec-standard
`‘ZZ’ signal after a
`predetermined length of time
`
`“automatically generating a
`Jedec-standard ‘ZZ’ signal”
`(cl. 3, 11, 15)
`
`“predetermined number of
`said internal address signals”
`(cl. 1, 2, 3, 4, 17, 18)
`
`U.S. Patent Number 6,651,134
`“non-interruptible” (cl. 1, 17) once initiated, cannot be
`stopped or terminated until
`the fixed number of internal
`addresses has been generated
`number of said internal
`address signals determined
`prior to receipt of the external
`address signal, clock signal,
`and one or more control
`signals
`burst of a length determined
`prior to receipt of the external
`address signal, clock signal,
`and one or more control
`signals
`Function: reading data from
`and writing data to a plurality
`of storage elements in
`response to a plurality of
`internal address signals
`
`“fixed burst length” (cl. 2, 5)
`
`“means for reading data from
`and writing data to a plurality
`of storage elements in
`response to a plurality of
`internal address signals” (cl.
`16)
`
`Structure: the memory array
`104 depicted in Figure 1
`described as “a static random
`access memory (SRAM) or a
`dynamic random access
`memory (DRAM), or other
`appropriate memory to meet
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`3
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`Ex. 2001, Page 3
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`
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`“means for generating a
`predetermined number of said
`internal address signals in
`response to (i) an external
`address signal, (ii) a clock
`signal and (iii) one or more
`control signals, wherein said
`generation of said
`predetermined number of
`internal address signals is
`non-interruptible” (cl. 16)
`
`U.S. Patent Number 6,680,516
`“semiconductor substrate”
`(cl. 5)
`
`“metallic layer” (cl. 5)
`
`“etch stop layer” (cl. 5)
`
`“via, through the insulating
`layer, on the substrate” (cl. 5)
`
`the design criteria of a
`particular implementation” or
`their equivalent
`Function: generating a
`predetermined number of said
`internal address signals in
`response to (i) an external
`address signal, (ii) a clock
`signal, and (iii) one or more
`control signals, wherein said
`generation of said
`predetermined number of
`internal address signals is
`non-interruptible.
`
`Structure: the “circuit 102”
`depicted in Figure 2 and
`described at 3:62-4:14, the
`“circuit 102’” depicted in
`Figure 3 and described at
`4:16-40, or their equivalents.
`
`supporting semiconductor
`material upon which or
`within which elements of the
`semiconductor structure are
`formed
`conductive layer comprised
`of metal, metal alloy, or metal
`compound.
`a first layer used to
`significantly slow further
`progress of an etch of a
`second layer when the etch
`reaches the first layer
`hole, through the insulating
`layer and exposing the
`substrate
`
`U.S. Patent Number 6,825,526
`“tunnel oxide layer” (cl. 1, 8,
`15)
`
`oxide layer with a very high
`probability of electron direct
`tunneling across it
`“channel region” (cl. 1, 8, 15) high conductivity region
`connecting source and drain
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`4
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`Ex. 2001, Page 4
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`
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`Effective channel width
`increases with an increase in
`height of a trench sidewall
`
`“said effective channel width
`corresponds to a height of
`said trench sidewalls” (cl. 1,
`8, 15)
`“drive current” (cl. 3, 10, 17) Current that flows between
`drain and source regions in a
`flash memory array
`
`Dated: March 1, 2021
`
`/s/ Peter J. Wied
`
`OF COUNSEL:
`
`Peter J. Wied (pro hac vice)
`Vincent K. Yip (pro hac vice)
`NIXON PEABODY LLP
`300 S. Grand Avenue, Suite 4100
`Los Angeles, CA 90071-3151
`Tel.: 213-629-6000
`pwied@nixonpeabody.com
`vyip@nixonpeabody.com
`
`Karen L. Pascale (#2903) [kpascale@ycst.com]
`Robert M. Vrana (#5666) [rvrana@ycst.com]
`Rodney Square
`1000 North King Street
`Wilmington, DE 19801
`Telephone: (302) 571-6600
`
`Attorneys for Defendants
`Nanya Technology Corporation, Nanya
`Technology Corporation, U.S.A., and Nanya
`Technology Corporation Delaware
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`5
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`Ex. 2001, Page 5
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