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`United States Patent
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`[19]
`6,077,384
`[11] Patent Number:
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`[45] Date of Patent: *Jun. 20, 2000
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`Collins et al.
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`USOO6077384A
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`European Patent Office Communication pursuant to Article
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`
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`and Rule
`51(2) EPC for Application No.
`96(2)
`94307307.2—2208, mailed Jan. 17, 1996.
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`Primary Examiner—Thi Dang
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`Attorney, Agent, or Firm—Michaelson and Wallace
`ABSTRACT
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`[57]
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`The invention is embodied by a plasma reactor for process-
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`ing a workpiece, including a reactor enclosure defining a
`processing chamber, a semiconductor window, a base within
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`the chamber for supporting the workpiece during processing
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`thereof, a gas inlet system for admitting a plasma precursor
`gas into the chamber, and an inductive antenna adjacent a
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`side of the semiconductor window opposite the base for
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`coupling power into the interior of the chamber through the
`semiconductor window electrode.
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`[54]
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`[75]
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`[73]
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`[21]
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`[22]
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`PLASMA REACTOR HAVING AN
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`INDUCTIVE ANTENNA COUPLING POWER
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`THROUGH A PARALLEL PLATE
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`ELECTRODE
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`Inventors: Kenneth S. Collins, San Jose; Michael
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`Rice, Pleasanton; John Trow, San Jose;
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`Douglas Buchberger, Tracy; Eric
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`Askarinam, Sunnyvale; Joshua
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`Chiu-Wing Tsui, Santa Clara; David
`W. Groechel, Los Altos Hills;
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`Raymond Hung, San Jose, all of Calif.
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`Assignee: Applied Materials, Inc., Santa Clara,
`Calif.
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`Notice:
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`This patent issued on a continued pros-
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`ecution application filed under 37 CFR
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`1.53(d), and is subject to the twenty year
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`term provisions of 35 U.S.C.
`patent
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`154(a)(2).
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`Appl. No.:
`Filed:
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`08/597,577
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`Feb. 2, 1996
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`Related US. Application Data
`Continuation—in—part of application No. 08/521,668, Aug.
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`31, 1995, abandoned, which is a continuation—in—part of
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`application No. 08/289,336, Aug. 11, 1994, abandoned.
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`Int. Cl.7 ....................................................... H05H 1/00
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`US. Cl.
`.......................................... 156/345; 118/723 I
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`Field of Search .......................... 156/345; 118/723 I,
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`118/723 IR; 216/68
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`(List continued on next page.)
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`67 Claims, 55 Drawing Sheets
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` -I|.\I
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`galley/[111111];
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`,110.
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` m“\\nu—.'
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`W\\\\\\\\\\V\\\\\\\\\\\<
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`U.S. PATENT DOCUMENTS
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`Sheet 4 0f 55
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`Sheet 5 0f 55
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`Sheet 6 0f 55
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`US. Patent
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`Jun. 20, 2000
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`US. Patent
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`Jun. 20,2000
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`Jun. 20, 2000
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`US. Patent
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`Jun. 20,2000
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`US. Patent
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`Jun. 20, 2000
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`US. Patent
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`Jun. 20,2000
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`Sheet 21 0f 55
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`US. Patent
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`Jun. 20, 2000
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`Jun. 20, 2000
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`US. Patent
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`Jun. 20, 2000
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`Jun. 20, 2000
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`US. Patent
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`Page 29 of 80
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`Page 29 of 80
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`US. Patent
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`Jun. 20, 2000
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`Jun. 20, 2000
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`Jun. 20, 2000
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`6,077,384
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`6,077,384
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`Page 42 0f 80
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`Jun. 20, 2000
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`6,077,384
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`Jun. 20, 2000
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`Sheet 42 0f 55
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`6,077,384
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`Page 44 0f 80
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`US. Patent
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`Jun. 20, 2000
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`Sheet 43 0f 55
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`Page 45 of 80
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`Jun. 20, 2000
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`Sheet 44 0f 55
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`6,077,384
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`US. Patent
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`Jun. 20, 2000
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`Sheet 45 0f 55
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`6,077,384
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`Jun. 20, 2000
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`Jun. 20, 2000
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`Sheet 47 0f 55
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`6,077,384
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`Jun. 20, 2000
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`6,077,384
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`Jun. 20, 2000
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`1
`PLASMA REACTOR HAVING AN
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`INDUCTIVE ANTENNA COUPLING POWER
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`THROUGH A PARALLEL PLATE
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`ELECTRODE
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`This is a continuation-in-part of application Ser. No.
`08/521,668, filed Aug. 31, 1995, now abandoned, which is
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`a continuation-in-part of application Ser. No. 08/289,336
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`filed Aug. 11, 1994, now abandoned.
`BACKGROUND OF THE INVENTION
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`1. Technical Field
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`The invention relates to a plasma reactor having parallel
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`plates for interposition therebetween of a workpiece to be
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`processed, such as a semiconductor wafer, and an inductive
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`coil antenna coupling RF power through one of the parallel
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`plates into the interior of the reactor.
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`2. Background Art
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`Inductively coupled plasma reactors for processing
`microelectronic semiconductor wafers, such as the type of
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`reactor disclosed in US. Pat. No. 4,948,458 to Ogle, enjoy
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`important advantages over parallel-plate capacitively
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`coupled plasma reactors. For example, inductively coupled
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`plasma reactors achieve higher plasma ion densities (e.g., on
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`the order of 1011 ions/cm3). Moreover, plasma ion density
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`and plasma ion energy can be independently controlled in an
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`inductively coupled plasma reactor by applying bias power
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`to the workpiece or wafer. In contrast, capacitively coupled
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`reactors typically provide relatively lower plasma ion den-
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`sities (e.g., on the order of only 1010 ions/cm3) and generally
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`cannot provide independent control of ion density and ion
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`energy. The superior ion-to-neutral density ratio provided by
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`an inductively coupled plasma etch reactor used to etch
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`silicon dioxide, for example, provides superior performance
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`at small etch geometries (e.g., below 0.5 micron feature size)
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`including better etch anisotropy, etch profile and etch selec-
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`tivity. In contrast, parallel plate capacitively coupled plasma
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`reactors typically stop etching at feature sizes on the order
`of about 0.25 microns, or at
`least exhibit
`inferior etch
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`selectivity and etch profile due to an inferior ion-to-neutral
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`density ratio.
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`The inductively coupled plasma reactor disclosed in US.
`Pat. No. 4,948,458 referred to above has a planar coil
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`overlying the chamber ceiling and facing the semiconductor
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`wafer being processed, thereby providing an optimally uni-
`form RF induction field over the surface of the wafer. For
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`this purpose, the ceiling, which seals the reactor chamber so
`that it can be evacuated, must be fairly transmissive to the
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`RF induction field from the coil and is therefore a dielectric,
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`such as quartz. It should be noted here that such a ceiling
`could be made from dielectric materials other than quartz,
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`such as aluminum oxide. However other materials such as
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`aluminum oxide tend produce greater contamination than
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`quartz due to sputtering.
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`An advantage of capacitively coupled plasma reactors is
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`that the chamber volume can be greatly reduced by reducing
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`thereby
`the space between the parallel plate electrodes,
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`better confining or concentrating the plasma over
`the
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`workpiece, while the reactor can be operated at relatively
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`high chamber pressure (e.g., 200 mTorr). In contrast, induc-
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`tively coupled plasma reactors require a larger volume due
`to the large skin depth of the RF induction field, and must be
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`operated at a lower chamber pressure (e.g., 10 mTorr) to
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`avoid loss of plasma ions due to recombination and higher
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`pumping speed. In commercial embodiments of the induc-
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`tively coupled reactor of US. Pat. No. 4,948,458 referred to
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`above, the requirement of a large chamber volume is met by
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`a fairly large area side wall. The lack of any other RF ground
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`return (due to the requirement of a dielectric window to
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`admit the RF induction field from the overhead coil) means
`that the chamber side wall should be conductive and act as
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`the principal ground or RF return plane. However, the side
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`wall is a poor ground plane, as it has many discontinuities,
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