`Mail Stop Patent Board
`Patent Trial and Appeal Board
`U.S. Patent and Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`
`Declaration of Jacob Robert Munford
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`
`Yasuharu Hosaka et al.
`In re Patent of:
`9,298,057 Attorney Docket No.: 12732-1925IP1
`U.S. Patent No.:
`March 29, 2016
`
`Issue Date:
`Appl. Serial No.: 13/939,323
`
`Filing Date:
`July 11, 2013
`
`Title:
`DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING
`THE DISPLAY DEVICE
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`1
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`SEL 2012
`Bluehouse v. SEL
`IPR2018-01405
`
`

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`1. My name is Jacob Robert Munford. I am over the age of 18, have personal
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`knowledge of the facts set forth herein, and am competent to testify to the
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`same.
`
`2. I earned a Master of Library and Information Science (MLIS) from the
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`University of Wisconsin-Milwaukee in 2009. I have over ten years of
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`experience in the library/information science field. Beginning in 2004, I
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`have served in various positions in the public library sector including
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`Assistant Librarian, Youth Services Librarian and Library Director. I have
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`attached my Curriculum Vitae as Appendix A.
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`
`
`
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`3. During my career in the library profession, I have been responsible for
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`materials acquisition for multiple libraries. In that position, I have cataloged,
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`purchased and processed incoming library works. That includes purchasing
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`materials directly from vendors, recording publishing data from the material
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`in question, creating detailed material records for library catalogs and
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`physically preparing that material for circulation. In addition to my
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`experience in acquisitions, I was also responsible for analyzing large
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`collections of library materials, tailoring library records for optimal catalog
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`2
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`

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`search performance and creating lending agreements between libraries
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`during my time as a Library Director.
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`
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`4. I am fully familiar with the catalog record creation process in the library
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`sector. In preparing a material for public availability, a library catalog record
`
`describing that material would be created. These records are typically
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`written in Machine Readable Catalog (herein referred to as MARC) code
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`and contain information such as a physical description of the material,
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`metadata from the material’s publisher and date of library acquisition. In
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`particular, the 008 field of the MARC record is reserved for denoting the
`
`creation of the library record itself. As this typically occurs during the
`
`process of preparing materials for public access, it is my experience that an
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`item’s MARC record accurately indicates the date of an item’s public
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`availability.
`
`
`5. I have reviewed Exhibit SEL2004, a book by John F. Wager entitled
`
`Transparent Electronics published by Springer in 2008.
`
`
`
`6. Attached hereto as Appendix WA01 is a true and correct copy of scans of
`
`the cover, publishing data, title page and table of contents for Transparent
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`3
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`

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`Electronics from the University of Pittsburgh. I secured these scans from the
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`library’s onsite holdings.
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`
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`7. In comparing Appendix WA01 to Exhibit SEL2004, it is my determination
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`that Exhibit SEL2004 is a true and correct copy of Transparent Electronics
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`by John F. Wager.
`
`
`
`8. Attached hereto as Appendix WA02 is a true and correct copy of the MARC
`
`record for Transparent Electronics from the University of Pittsburgh’s
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`library. I secured this record from the library’s online catalog.
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`
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`9. The 008 field of Transparent Electronics MARC record included in
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`Appendix WA02 indicates that Transparent Electronics was first recorded
`
`by University of Pittsburgh as of June 19, 2008. Based on this information, it
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`is my determination that Transparent Electronics would have been made
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`accessible and publicly available soon after it was received on June 19,
`
`2008.
`
`
`10. I have reviewed Exhibit SEL2008, a book by S.M. Sze entitled Physics of
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`Semiconductor Devices published by Wiley in 1981.
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`
`
`4
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`

`

`11. Attached hereto as Appendix SZ01 is a true and correct copy of scans of the
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`cover, publishing data, title page and table of contents for Physics of
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`Semiconductor Devices from the University of Pittsburgh. I secured these
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`scans from the library’s onsite holdings.
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`
`
`12. In comparing Appendix SZ01 to Exhibit SEL2008, it is my determination
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`that Exhibit SEL2008 is a true and correct copy of Physics of Semiconductor
`
`Devices by S.M. Sze.
`
`
`
`13. Attached hereto as Appendix SZ02 is a true and correct copy of the MARC
`
`record for Physics of Semiconductor Devices from the University of
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`Pittsburgh’s library. I secured this record from the library’s online catalog.
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`
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`14. The 008 field of Physics of Semiconductor Devices MARC record included
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`in Appendix SZ02 indicates that Physics of Semiconductor Devices was first
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`recorded by University of Pittsburgh as of January 26, 1981. Based on this
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`information, it is my determination that Physics of Semiconductor Devices
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`would have been made accessible and publicly available soon after it was
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`received on January 26, 1981.
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`
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`5
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`15. I have reviewed Exhibit SEL2009, a book by Jean-Pierre Colinge entitled
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`Physics of Semiconductor Devices published by Springer in 2006.
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`
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`16. Attached hereto as Appendix CO01 is a true and correct copy of scans of the
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`cover, publishing data, title page and table of contents for Physics of
`
`Semiconductor Devices from Carnegie-Mellon University. I secured these
`
`scans from the library’s onsite holdings.
`
`
`
`17. In comparing Appendix CO01 to Exhibit SEL2009, it is my determination
`
`that Exhibit SEL2009 is a true and correct copy of Physics of Semiconductor
`
`Devices by Jean-Pierre Colinge.
`
`
`
`18. Attached hereto as Appendix CO02 is a true and correct copy of the MARC
`
`record for Physics of Semiconductor Devices from Carnegie-Mellon
`
`University’s library. I secured this record from the library’s online catalog.
`
`
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`19. The 008 field of Physics of Semiconductor Devices MARC record included
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`in Appendix CO02 indicates that Physics of Semiconductor Devices was first
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`recorded by Carnegie-Mellon University as of January 19, 2006. Based on
`
`this information, it is my determination that Physics of Semiconductor
`
`6
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`

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`Devices would have been made accessible and publicly available soon after
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`it was received on January 19, 2006.
`
`
`20. I have reviewed Exhibit SEL2010, a book edited by John Daintith entitled A
`
`Dictionary of Chemistry published by Oxford University Press in 2008.
`
`
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`21. Attached hereto as Appendix DA01 is a true and correct copy of scans of the
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`cover, publishing data, title page and table of contents for A Dictionary of
`
`Chemistry from the Carnegie Library of Pittsburgh. I secured these scans
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`from the library’s onsite holdings.
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`
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`22. In comparing Appendix DA01 to Exhibit SEL2010, it is my determination
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`that Exhibit SEL2010 is a true and correct copy of A Dictionary of
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`Chemistry by John Daintith.
`
`
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`23. Attached hereto as Appendix DA02 is a true and correct copy of the MARC
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`record for A Dictionary of Chemistry from the Carnegie Library of
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`Pittsburgh’s library. I secured this record from the library’s online catalog.
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`
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`24. The 008 field of A Dictionary of Chemistry MARC record included in
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`Appendix DA02 indicates that A Dictionary of Chemistry was first recorded
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`7
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`by the Carnegie Library of Pittsburgh as of June 26, 2008. Based on this
`
`information, it is my determination that A Dictionary of Chemistry would
`
`have been made accessible and publicly available soon after it was received
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`on June 26, 2008.
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`
`
`
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`25. I have reviewed Exhibit SEL2011, a book entitled McGraw-Hill Dictionary
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`of Scientific and Technical Terms published by McGraw-Hill in 2002.
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`26. Attached hereto as Appendix MC01 is a true and correct copy of the MARC
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`record for McGraw-Hill Dictionary of Scientific and Technical Terms from
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`George Mason University’s library. I secured this record from the library’s
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`online catalog.
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`
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`27. In comparing the description included within the MARC record of Appendix
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`MC01 to Exhibit SEL2011, it is my determination that Exhibit SEL2011 is a
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`true and correct copy of McGraw-Hill Dictionary of Scientific and Technical
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`Terms.
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`
`
`28. The 008 field of McGraw-Hill Dictionary of Scientific and Technical Terms
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`MARC record included in Appendix MC01 indicates that McGraw-Hill
`
`8
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`

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`Dictionary of Scientific and Technical Terms was first recorded by George
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`Mason University as of June 19, 2002. Based on this information, it is my
`
`determination that McGraw-Hill Dictionary of Scientific and Technical
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`Terms would have been made accessible and publicly available soon after it
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`was received on June 19, 2002.
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`
`29. I have been retained on behalf of the Patent Owner to provide assistance in
`
`the above-illustrated matter in establishing the authenticity and public
`
`availability of the documents discussed in this declaration. I am being
`
`compensated for my services in this matter at the rate of $100.00 per hour
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`plus reasonable expenses. My statements are objective, and my
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`compensation does not depend on the outcome of this matter.
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`30. I declare under penalty of perjury that the foregoing is true and correct. I
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`hereby declare that all statements made herein of my own knowledge are
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`true and that all statements made on information and belief are believed to
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`be true; and further that these statements were made the knowledge that
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`willful false statements and the like so made are punishable by fine or
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`imprisonment, or both, under Section 1001 of Title 18 of the United States
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`Code.
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`
`
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`
`9
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`

`

`
`Dated: 12/5/18
`
`
`
`
`
`Jacob Robert Munford
`
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`10
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`

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`APPENDIX A
`APPENDIX A
`IPR2018-01405
`IPR2018-01405
`
`11
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`

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`Appendix A - Curriculum Vitae
`
`Education
`
`University of Wisconsin-Milwaukee - MS, Library & Information Science, 2009
`Milwaukee, WI
`● Coursework included cataloging, metadata, data analysis, library systems,
`management strategies and collection development.
`● Specialized in library advocacy and management.
`
`Grand Valley State University - BA, English Language & Literature, 2008
`Allendale, MI
`● Coursework included linguistics, documentation and literary analysis.
`● Minor in political science with a focus in local-level economics and
`government.
`
`Professional Experience
`
`Library Director, February 2013 - March 2015
`Dowagiac District Library
`Dowagiac, Michigan
`● Executive administrator of the Dowagiac District Library. Located in
`Southwest Michigan, this library has a service area of 13,000, an annual
`operating budget of over $400,000 and total assets of approximately
`$1,300,000.
`● Developed careful budgeting guidelines to produce a 15% surplus during the
`2013-2014 & 2014-2015 fiscal years.
`● Using this budget surplus, oversaw significant library investments including
`the purchase of property for a future building site, demolition of existing
`buildings and building renovation projects on the current facility.
`● Led the organization and digitization of the library's archival records.
`● Served as the public representative for the library, developing business
`relationships with local school, museum and tribal government entities.
`
`12
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`

`

`● Developed an objective-based analysis system for measuring library services
`- including a full collection analysis of the library's 50,000+ circulating
`items and their records.
`
`
`November 2010 - January 2013
`Librarian & Branch Manager, Anchorage Public Library
`Anchorage, Alaska
`● Headed the 2013 Anchorage Reads community reading campaign including
`event planning, staging public performances and creating marketing
`materials for mass distribution.
`● Co-led the social media department of the library's marketing team, drafting
`social media guidelines, creating original content and instituting long-term
`planning via content calendars.
`● Developed business relationships with The Boys & Girls Club, Anchorage
`School District and the US Army to establish summer reading programs for
`children.
`
`June 2004 - September 2005, September 2006 - October 2013
`Library Assistant, Hart Area Public Library
`Hart, MI
`● Responsible for verifying imported MARC records and original MARC
`cataloging for the local-level collection as well as the Michigan Electronic
`Library.
`● Handled OCLC Worldcat interlibrary loan requests & fulfillment via
`ongoing communication with lending libraries.
`
`Professional Involvement
`
`Alaska Library Association - Anchorage Chapter
`● Treasurer, 2012
`
`Library Of Michigan
`● Level VII Certification, 2008
`● Level II Certification, 2013
`
`13
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`

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`Michigan Library Association Annual Conference 2014
`● New Directors Conference Panel Member
`
`Southwest Michigan Library Cooperative
`● Represented the Dowagiac District Library, 2013-2015
`
`Professional Development
`
`Library Of Michigan Beginning Workshop, May 2008
`Petoskey, MI
`● Received training in cataloging, local history, collection management,
`children’s literacy and reference service.
`
`Public Library Association Intensive Library Management Training, October 2011
`Nashville, TN
`● Attended a five-day workshop focused on strategic planning, staff
`management, statistical analysis, collections and cataloging theory.
`
`Alaska Library Association Annual Conference 2012 - Fairbanks, February 2012
`Fairbanks, AK
`● Attended seminars on EBSCO advanced search methods, budgeting,
`cataloging, database usage and marketing.
`
`14
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`

`

`APPENDIX WA01
`APPENDIX WAOI1
`IPR2018-01405
`IPR2018-01405
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`15
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`Us
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`|
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`3 1735 055 691
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`
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`60
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`608
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`BiGleleiioes A
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`aa=
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`wale fi
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`Transparent
`
`Electronics
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`16
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`

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`
`Wager:Keszler-
`
`Miss
`
`Electronics
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`Transparent
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`17
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`17
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`

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`18
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`UNIVERSITY OF PITTSBURGH LIBRARIES
`
`19
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`

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`Transparent Electronics
`
`20
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`

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`
`Transparent Electronics
`
`John F. Wager
`School ofElectrical Engineering and Computer Science
`Oregon State University
`1148 Kelley Engineering Center
`Corvallis, Oregon 97331-5501
`
`Douglas A. Keszler
`Department of Chemistry
`Oregon State University
`010/153A Gilbert Hall
`Corvallis, Oregon 97331-4003
`
`Rick E. Presley
`SchoolofElectrical Engineering and Computer Science
`Oregon State University
`1148 Kelley Engineering Center
`Corvallis, Oregon 97331-5501
`
`g) Springer
`
`
`
`21
`
`21
`
`

`

`John F. Wager
`Oregon State University
`School of Electrical Engineering & Computer Science
`1148 Kelley Engineering Center
`Corvallis, OR 97331-5501
`
`Douglas A. Keszler
`Oregon State University
`Department of Chemistry
`010/153A Gilbert Hall
`Corvallis, OR 97331-4003
`
`Rick E. Presley
`OregonState University
`Schoolof Electrical Engineering & Computer Science
`1148 Kelley Engineering Center
`Corvallis, OR 97331-5501
`
`ISBN 978-0-387-72341-9
`
`c-ISBN 978-0-387-72342-6
`
`Library of Congress Control Number: 2007932718
`
`© 2008 Springer Science+Business Media, LLC
`All rights reserved. This work may not be translated or copied in whole or in part without the written
`permission ofthe publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York,
`NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in
`connection with any form of information storage and retrieval, electronic adaptation, computer
`software, or by similar or dissimilar methodology now know or hereafter developed is forbidden. The
`use in this publication oftrade names, trademarks, service marks and similar terms, even if they are not
`identified as such,is not to be taken as an expression of opinion as to whether or not they are subject to
`proprietary rights.
`
`Printed on acid-free paper.
`
`987654321
`
`springer.com
`
`22
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`22
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`
`
`
`
`Table of Contents
`
`Prela Ce :siscsisicecisccasvicssanvadcianvesasanssssvassisscvsavensanensciicesseitesscssteeenecsseisesenacsssabesy Vii
`
`1 Introd uctioni...........c.cccscsssscssssssesssessssseenscsscsssrnscrssseeessesssssserseseenseeusesees 1
`1.1 A technology in a Hurry ..0... eee eee eeeeceeeeseeceebeseesceaceeeeeeeseentes ]
`1.2 Pre-history sisesscesivavscsnasscsussaservacsnscvsnnssnaccaeansrsascnunvsvavenstazeanvdcenantiaeess 2
`1.2.1 Transparent conducting oxides (TCOS).......cccsesseseseeereereeeeens 2
`1.2.2 Thin-film transistors (TFTS)..........cccccccssssccsessseceeessseeeeesesesanees 5
`1.3 The stage is now Setascasssasincensgevsvansearcnnnasantonsasincapevssavastesyuasussineiysibens 8
`
`2 A Review Of Prior WOrk...........ssssssssoreccerescsssceccsstscesscenssssersnsencusseesssronss 9
`2.1 Origins sisuesspssesscascssncnnnpnsesnnedsusceverseelaaunauesisetesvasiiundvedemiysseesuuieadlsinacs 9
`2.1.1 Transparent electronics - 2003 .......cceeececceeteeseeeeseeteeeseeeseee 13
`2.1.2 Transparent electronics - 2004.00... ccccceseseesecesseeseeeneeeneeneeee 17
`2.1.3 Transparent electronics - 2005 .........:cccessceeeneeesteceeteeeeeeeeteretanes 25
`2.1.4 Transparent electromics - 2006 ooo... eeeteetseeeetenaeettaneeee 30
`2.2 Perspective & Outlook wisssciscsincessvavcnnsannioascosannsiveniesvanunaimavanvacnnaea 37
`
`3 Applications. ............cssccccsscccssccsersssstesnscssecstnssecesencesenscessseesensessesensensees 39
`3.1 Looking into a crystalball...........cssssosvasssssssossssusccavsusvsensunsuesnaevsus 39
`3.2 A technology appraisal ....... navinssncnanemrneucnaoreanncnnnncesniminaiecenes esis 39
`3.3 An application smorgasbord ...........::cesseeceeessensessecenscesseeneneeaeeceeenes 44
`3.4 Applications in retrospectiVe .......cccscsceesessessseeeeeesenseseesteeesseseeneees 56
`
`4 Materrials..........cccccsscssscsssssoscsscressrssescccssceesssenseneessavernensesecessonseonssoussences 57
`4.1 Device COMPONENTS........ eee eeeeceeesneecoresaceecssstesesesecesscaeeerssssereneess 57
`4.2 n-type semiconductor channel materials............0...:c:cccceseneseeeeeees 58
`4.3 Amorphous oxide SeMICONGUCEOSS.........:ccceeescesteceseesscessereneeeneeneeee 67
`4.4 p-type SCEMICONGUCTOIS..... cece ec ceeeeeeesseeteseneeseeeceeneeneesseeeaeage 71
`4.4.1 Copper oxides and chalcogenides......cccsccseeesseseeseseverenesenee 71
`4.4.2 Rhodium oxides...........0.....cssaisecsessnninesnseaasonensrsiavcenenivere 76
`4.4.3 Nanomaterials ........0.. cee cseeeseesersessseseeeeseaetseeseeseresseseesanseseasease 77
`4.4.4 Prospects for p-type semiconductors
`in transparent ClECtFOMICS............ccesesseesseessecessseeeeerenseceeneenatees 77
`
`23
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`Table of Contents
`vi
`eeeeeeeeeeESSSSSSSSSSSSSSSSSSSssseseSeee
`
`4.5 Dielectrics sssxsosssissnsvevus sieasecsetteai conan pneneennneavaeuenanrunsaremasosenccoesdextunis 78
`4.5.1 Gate dielectrics ....... ssssspesescussussscees cp ibteecarneeeenenarnenernucersmnn eeenos 78
`a2 Wtenevel HSCCS:crecscucueecursecosssaiitrieieesese=. 82
`
`S Devices .......:eccsssssssssessssccessvosersssesssansessessssssssscessassessecsossscecatevseasssseneesss83
`5.1 Transparent electronics devices .........cceceecccssescecccesssserseeseeseseeceeees 83
`5.2 Passive, linear devices .....c.ccccceecccccecececssssssesecacssevecsarvereecseeeceececccees 84
`5.2.1] RESIStOTS .......cseesssceessseseecseeessesssvseesssvssssseasesseessvasesuecacesseccesces 84
`5.2.2 Capacitors......ccsccccseescseeseesesceccecescosssvsenevevavsevavavsssevascvevavevessaves 87
`5.2.3 INGUCtrs occ cee ceeeceseeeseseeesessesscnsscsecssvaressesevseveserscvecevevsueses 89
`5.3 Two-terminal devices ssssisccccsieesssessisscscrauesiatiiiea.-conearcavecoreeeeamareses 91
`5.3.1 PM JUNCTIONS oo... eecceecectesssscesceecssescsssscsssesecavsevavsvssecessasuevevecsess 91
`5.3.2 Schottky barriers..........:cccccccesssscescceeseessessecsscsecssessveceecessescecesee, 94
`5.3.3 Heterojunctions........c.ccccccescssesescesesseecsecssescseveseesecseveveevecsees 102
`5.3.4 Metal-insulator-semiconductor (MIS) capacitors.................. 105
`5.4 Transparent thin-film transistors (TTFTS) ....0...ccccccecccccessseecceeceeee 110
`5.4.1 Ideal behavior .........ecccccccsesessesceesccasecscessesecesscsceeueescesceseesceces 111
`5.4.2 Non-ideal behavior ............cccccessesessssscceececeseseceseseveevecseeececcene 115
`5.4.3 Device stability 2... ccccccesesscesceseerecesessescceceesscessescecceeserees 138
`5.4.4 Alternative TTFT device types .......ccccccccsccsscecscescecececcccecessees 144
`5.5 Alternative transistOrs.............cceccccsecesssesssceereessssesesecssscesecsececeece. 148
`
`6 Transparent Circuits.......ccccssssccseccssceccssscsscccsecsececcecesecesecesesseccceseneces 153
`6.1 Introduction......... asscsswmsussusntsenpictseersssieesercesereocceoererrnenenesessns 153
`6.2 Exemplary transparent circuit process flOW .......ccccccccescceceeecceceeee 153
`6.2.1 Transparentring oscillator process flOW.......ccccccscesssseseecseseees 153
`6.2.2 Other considerations ..............cccccceecsesecescsecssscsecsaceacessesevsececees 156
`6.3 Exemplary transparent Circuits .......0ccccccccccceceseeeceseecesseceseceseeececeeee 160
`6.3.1 Transparent inverters and ring oscillators........0..ccccescccesceceeces 160
`6.3.2 Full-wave rectifler .........cccccccccccccsesscsecesesscsacesecssereseseeseeaecerees 163
`6.3.3 Level-shifting Circuits...........0ccccccccccscssscesserssecsevscseseveacieesees 164
`6.3.4 AMLCD transparent SWitCh........0 cee ceeeceececccecssscesevsseeceveeeees 165
`6.3.5 AMOLED backplane...........0.cccecesccsscesssseseececesccaceesscrsceseeee: 168
`6.3.6 Transparent charge-coupled devices (CCDs).........e.ccecsseccee- 178
`6.4 Barely scratching the surface.........c.cccccsscessscessceesseseceessecessseeees 182
`
`7 The Path Forward.................csccscsccssccseverecsccacsoveressncssscsenssensceesancesseeoes 183
`7.1 Where do we go from here? ..........ccccccccssceeesesceeesscceessceceessecencecees 183
`
`References.......scccccssssccsseecnseesssssnccessssssssnssesersstsesrevsnssesecencseaserscenrersececsces 189
`
`INEX ........scessssscenscsessseconecssccsessensccnacesssesesecasssecscossessscansccsecsasesaresstenceasecs 209
`
`24
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`
`
`2 1 Introduction
`
`ent electronics ‘killer apps’ are admittedly either not yet well-defined or
`are presently unrealizable due to current limitations in transparent electron-
`ics or in a requisite auxiliary technology. However, this topical ordering
`inversion is meant to be intentionally provocative. Since transparentelec-
`tronics is a nascent technology, we believe that its development will be
`most rapidly and efficiently accomplished if it
`is strongly application-
`driven, and if it is undertaken in a parallel fashion in which materials, de-
`vices, circuits, and system development are pursued concurrently. Hope-
`fully, such a product-driven concurrent developmentstrategy will lead to
`rapid technology assessment, the identification of new and most-likely un-
`expected applications, and an expeditious commercial deploymentof this
`technology.
`
`1.2 Pre-history
`
`Two primary technologies which preceded and underlie transparent elec-
`tronics are briefly overviewed. These topics are transparent conductive
`oxides (TCOs)and thin-film transistors (TFTs).
`
`1.2.1 Transparent conducting oxides (TCOs)
`
`TCOsconstitute an unusual class of materials possessing two physical
`properties - high optical transparency and high electrical conductivity -
`that are generally considered to be mutually exclusive (Hartnagel etal.
`1995). This peculiar combination of physical properties is only achievable
`if a material has a sufficiently large energy band gap so that it is non-
`absorbing ortransparent to visible light, i.e., > ~3.1 eV, and also possesses
`a high enough concentration of electrical carriers, i.e., an electron or hole
`concentration > ~10'? cm”, with a sufficiently large mobility, > ~1 cm? V"
`'s' that the material can be considered to be a ‘good’ conductorof elec-
`tricity.
`
`The three most common TCOsare indium oxide In2O3;, tin oxide SnO;,
`and zinc oxide ZnO, the basic electrical properties of which are summa-
`rized in Table 1.1. All three of these materials have band gaps abovethat
`required for transparencyacross the full visible spectrum.
`
`Note that although the TCOs listed in Table 1.1 are considered to be
`‘good’ conductors from the perspective of a semiconductor, they are actu-
`ally very poor conductors compared to metals. For example, the conduc-
`
`25
`
`25
`
`

`

`1.2 Pre-history
`
`3
`
`tivities of tungsten W, aluminum Al, and copper Cu, are approximately
`100,000, 350,000, and 600,000 S cm", indicating that the best In.O; con-
`ductivity (for indium tin oxide or ITO) is about a factor of 10 to 60 lower
`than that of a typical integrated circuit contact metal. The low conduc-
`tance of TCOs compared to metals has important consequences for both
`TCO andtransparent electronics applications, some of which are explored
`in this book. The theoretical absolute limit of the conductivity for a TCO
`has been estimated to be 25,000 S cm" (Bellingham 1992).
`
`Table 1.1. Electrical properties of common transparent conducting oxides
`(TCOs) Conductivities reported are for best-case polycrystalline films.
`
`Material
`
`Conductivity
`Bandgap
`Electron
`Mobility
`(S cm’)
`(eV)
`concentration
`(cm? V"!
`
`
`eeIn,0; 3.75 10,000 se 35
`
`
`
`3.35
`8,000
`>107!
`20
`3.6
`5,000
`>107°
`15
`
`ZnO
`SnO,
`
`Returning to Table 1.1, notice thatall three of the TCOs includedin this
`table are n-type, i.e., conductivity is a consequence of electron transport,
`and that the electron carrier concentration is strongly degenerate,1.e., the
`electron density exceeds that of the conduction effective band density of
`states by an appreciable amount (Pierret 1996; Sze and Ng 2007). All of
`the well-known and commercially relevant TCOsare n-type. p-type TCOs
`are a relatively new phenomenon andtheir conductivity performance is
`quite poor comparedto that of n-type TCOs. To a large extent, the poor
`conductivity of p-type TCOsis due to the very low mobility of these mate-
`rials, typically less than ~1 cm? V"'s', compared to mobilities in the range
`of ~10-40 cm? V's"! for n-type TCOs.
`
`The n-type mobilities indicated in Table 1.1 are quite small compared to
`those representative single crystal silicon materials and devices, which
`range from ~250-1,500 cm? V's! However,this mobility comparison be-
`tween TCOsandsingle crystal silicon is a bit misleading since single crys-
`tal silicon mobility is not usually specified at doping concentrations as
`large as those typical of TCOs.
`In fact,
`it is reported that single mn
`silicon mobility is independent of doping concentration above ~10'? cm*
`ii an electron mobility of~90 cm? V's"! and a hole mobility of~50 cm?
`“'s' (Baliga 1995). A low mobility at high carrier concentrationsis, to a
`faeee extent, a consequence of intense ionized impurity scattering associ-
`
`ated with high doping concentrations (Hartnagel et al.1995).
`
`26
`
`26
`
`

`

`SY ECHO
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`
`27
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`APPENDIX WA02
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`11/28/2018
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`Briefinfo Detailedinfo Staff Info|
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`Transparent electronics John F. Wager, Douglas A. Keszler, Rick E. Presley.
`
`000 04337cam a22003617a 450
`
`001 6586590
`
`005 20170413163643.0
`
`006 md
`
`007 crn
`
`008 080619s2008 nyua sb 001 0 engd
`
`015 __ Ja GBA774913 |2 bnb
`
`015 __ Ja 07,N30,1209 |2 dnb
`
`016 7_ Ja 013950172 |2 Uk
`
`016 7_ |a 984808140 |2 DE-101
`
`020 __ Ja 9780387723419 (hbk.
`
`: acid-free paper)
`
`020 __ |a 0387723412 (hbk.
`
`: acid-free paper)
`
`035 __ Ja (WaSeSS)ssj0000261722
`
`040 __ Ja UKM Jc UKM |d YDXCP |d BTCTA |d BAKER |d ORE |d OHX |d CUS |d VLB |d DEBSZ |d HDC Jd OCLCO |d
`DLC Jd WaSeSS
`042 __ |a Iccopycat
`
`050 00 |a TK7835 |b .W284 2008
`
`082 04 Ja 621.38152 |2 22
`
`100 1_ |a Wager, John F.
`
`|q (John Fisher)
`
`245 10 |a Transparent electronics |h [electronic resource] / |c John F. Wager, Douglas A. Keszler, Rick E. Presley.
`
`260 __ |a NewYork :
`
`|b Springer,
`
`|¢ c2008.
`
`300 __ Ja viii, 212 p.
`
`; [bill. ; Jc 24 cm.
`
`504 ___ |a Includes bibliographical references (p. [189]-208) and index.
`
`505 00 |g 1.1 [t A technology in a hurry |g 1 -- |g 1.2 |t Pre-history |g 2 -- |g 1.2.1 |t Transparent conducting oxides
`(TCOs) |g 2 -- |g 1.2.2 |t Thin-film transistors (TFTs) |g 5 -- |g 1.3 |t The stage is now set |g 8 -- |g2 [tA
`Review of Prior Work |g 9 -- |g 2.1 |t Origins |g 9 -- |g 2.1.1 |t Transparent electronics -- 2003 |g 13 -- |g 2.1.2
`|t Transparent electronics -- 2004 |g 17 -- |g 2.1.3 |t Transparent electronics -- 2005 |g 25 -- |g 2.1.4 |t
`Transparent electronics -- 2006 |g 30 -- |g 2.2 |t Perspective & Outlook |g 37 -- |g 3 |t Applications |g 39 -- |g
`3.1 |t Looking into a crystal ball
`|g 39 -- |g 3.2 |t A technology appraisal |g 39 -- |g 3.3 |t An application
`smorgasbord |g 44 -- |g 3.4 |t Applications in retrospective |g 56 -- |g 4 |t Materials |g 57 -- |g 4.1 |t Device
`components |g 57 -- |g 4.2 |t n-type semiconductor channel materials |g 58 -- |g 4.3 |t Amorphous oxide
`semiconductors |g 67 -- |g 4.4 |t p-type semiconductors |g 71 -- |g 4.4.1 |t Copper oxides and chalcogenides |g
`
`https://pittcat. pitt.edu/cgi-bin/Pwebrecon.cgi?v3=1 &ti=1,1&SEQ=20181128171734&Search%5FArg=transparent%20electronics&Search%5FCode=TA...
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`11/28/2018
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`Staff Info
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`71 -- |g 4.4.2 |[t Rhodium oxides |g 76 -- |g 4.4.3 |t Nanomaterials |g 77 -- |g 4.4.4 |t Prospects for p-type
`semiconductors in transparent electronics |g 77 -- |g 4.5 |t Dielectrics |g 78 -- |g 4.5.1 |t Gate dielectrics |g 78 --
`|g 4.5.2 |t Interlevel dielectrics |g 82 -- |g 5 |t Devices |g 83 -- |g 5.1 |t Transparent electronics devices |g 83 --
`|g 5.2 |t Passive, linear devices |g 84 -- |g 5.2.1 |t Resistors |g 84 -- |g 5.2.2 |t Capacitors |g 87 -- |g 5.2.3 |t
`Inductors |g 89 -- |g 5.3 |[t Two-terminal devices |g 91 -- |g 5.3.1 |t pn junctions |g 91 -- |g 5.3.2 |t Schottky
`barriers |g 94 -- |g 5.3.3 |[t Heterojunctions |g 102 -- |g 5.3.4 |t Metal-insulator-semiconductor (MIS) capacitors
`Ig 105 -- |g 5.4 |t Transparent thin-film transistors (TTFTs) |g 110 -- |g 5.4.1 |t Ideal behavior |g 111 -- Jg 5.4.2
`|t Non-ideal behavior |g 115 -- |g 5.4.3 |t Device stability |g 138 -- |g 5.4.4 |t Alternative TTFT device types |g
`144 -- |g 5.5 |t Alternative transistors |g 148 -- |g 6 |t Transparent Circuits |g 153 -- |g 6.2 |t Exemplary
`transparentcircuit process flow |g 153 -- |g 6.2.1 |t Transparent ring oscillator process flow |g 153 -- |g 6.3 |t
`Exemplary transparentcircuits |g 160 -- |g 6.3.1 |t Transparent inverters and ring oscillators |g 160 -- |g 6.3.2 |t
`Full-waverectifier |g 163 -- |g 6.3.3 |t Level-shifting circuits |g 164 -- |g 6.3.4 |t AMLCD transparent switch |g
`165 -- |g 6.3.5 |t AMOLED backplane |g 168 -- |g 6.3.6 |t Transparent charge-coupled devices (CCDs) |g 178 --
`|g 6.4 |t Barely scratching the surface |g 182 -- |g 7 |t The Path Forward |g 183.
`520 __ Ja "Transparent electronics is an emerging technology that employs wide band-gap semiconductors for the
`realization of invisible circuits. This monograph providesthe first roadmap for transparent electronics, identifying
`wherethe field is, where it is going, and what needs to happen to moveit forward. Although the central focus of
`this monograph involves transparent electronics, many of the materials, devices, circuits, and process-integration
`strategies discussed herein will be of great interest to researchers working in other emerging fields of
`optoelectronics and electronics involving printing, large areas, low cost, flexibility, wearability, and fashion and
`design." - Back cover.
`650 _0 |a Transparent electronics.
`
`700 1_ |a Keszler, Douglas A.,
`
`|d 1957-
`
`700 1_ Ja Presley, Rick E.
`
`856 40 |z Pitt users please click through to access via SpringerLink ebooks - Chemistry and Materials Science (2008) |u
`http://pitt.idm.oclc.org/login?url=https://link.springer.com/openurl?genre=book&isbn=978-0-387-72341-9
`920 __ |a Serials Solutions Ebook
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