。2)United States Patent
`
`Toda et al.
`
`US 6,809,390 B2
`(10) Patent No.:
`Oct. 26, 2004
`(45) Date of Patent:
`
`JP
`JP
`JP
`JP
`JP
`JP
`
`08 095075 A
`09叩304787
`11悶052405
`2000悶275666
`2000-284261 A
`2000“284261
`
`4/1996
`11/1997
`2/1999
`10/2000
`10/2削 0
`10/2000
`
`OTHER PUBLICATIONS
`
`Communication from Japanese Patent Office re counte叩art
`application.
`
`Communication from Korean Patent Office re counterpart
`application.
`
`Primary Ex仰 1iner Amir Zarabian
`Assistant Examiner-Kiesha Rose
`(74) Attorn叩 Ag叫 orFirm」 Iarness,Dickey & Pierce,
`P.L.C
`
`ABSTRACT
`(57)
`。おclosedis a semiconductor chip mounting substrate 4a
`bearing semiconductor chips 19a and 19b thereof. The first
`substrate 4a includes a power source line 22 for supplying
`a supply voltage potential to the semiconductor chips 19a
`and 19b, a ground line 23 for supplying a ground voltage
`potential to the semiconductor chips 19a and 19b, output
`lines 21a and 2lb to which an output signal is supplied from
`the semiconductor chips 19αand 19b, and an in弓ulatorlayer
`11 for covering the output lines 2la and 2lb. The inβulator
`layer 11 is formed so that no insulator layer is arranged in the
`area between the power source line 22 and the ground line
`23
`
`(54)
`
`SEMICONDUCTOR CHIP MOUNTING
`SUBSTRATE, ELECTI主OOPTICALDEVICE,
`LIQUID剛 CRYSTALDEVICE,
`ELECTROLUMINESCENT DEVICE, AND
`ELECTRONIC EQUIPMENT
`
`(75)
`
`Inventors: Takatomo Toda, Toyoshina-machi (J町；
`N削 kiMakino, Matsumato (JP)
`
`(73)
`
`Assignee: Seiko Epson Corporation (JP)
`
`Notice:
`
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 160 days.
`
`〆，目、
`
`、h
`
`Ff
`＊
`
`(21)
`
`Appl. No.: 09/999,207
`
`(22)
`
`Filed:
`
`Nov. 30, 2001
`
`(65)
`
`Prior Publication Data
`
`US 2002/0088984 Al Jul. 11タ 2002
`
`(30)
`
`Foreign Application Priority Data
`
`Nov. 30, 2000
`Oct. 15, 2001
`
`(JP) ......................・ M ・−・・ 2000-365715
`(JP) ・....・ H ・...・ H ・....・ H ・−−…・・…… 2001-317142
`
`Int. Cl.7…....・ H ・....・ H ・..HOlL 31/0203; 0090 3/36;
`003H 1/04
`U.S. CJ・…...・ H ・−…....・ H ・.....257/434; 345/98; 359/58
`Field of Search ....・ H ・−…....・ H ・−…....・ H ・.257/432, 434,
`257/446; 349/122, 151, 152; 354/98; 359/58
`
`References Cited
`
`(51)
`
`(52)
`(58)
`
`(56)
`
`JP
`
`FOREION PバTENTDOCUMENTS
`
`。4-93826
`
`8/1992
`
`10 Claims, 21 Drawing Sheets
`
`4a
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`7
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`SEL 2005
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`US 6,809,390 B2
`
`28b
`
`U.S. Patent
`
`Oct. 26,2004
`
`Sheet 2 of 21
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`U.S. Patent
`
`Oct. 26, 2004
`
`Sheet 3 of 21
`
`US 6,809,390 B2
`
`FIG. 3
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`U.S. Patent
`U.S. Patent
`
`Oct. 26, 2004
`Oct. 26, 2004
`
`Sheet 4 of 21
`Sheet 4 of 21
`
`US 6,809,390 B2
`US 6,809,390 B2
`
`FIG. 4
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`

`U.S. Patent
`U.S. Patent
`
`Oct. 26, 2004
`Oct. 26, 2004
`
`Sheet 5 of 21
`Sheet 5 of 21
`
`US 6,809,390 B2
`US 6,809,390 B2
`
`FIG. 5
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`Oct. 26, 2004
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`U.S. Patent
`
`Oct. 26, 2004
`
`Sheet 9 of 21
`
`US 6,809,390 B2
`
`FIG.9
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`Oct. 26,2004
`
`Sheet 10 of 21
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`U.S. Patent
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`Oct. 26, 2004
`
`Sheet 12 of 21
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`US 6,809,390 B2
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`U.S. Patent
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`Oct. 26, 2004
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`Sheet 14 of 21
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`US 6,809,390 B2
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`FIG. 14
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`U.S. Patent
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`Oct. 26,2004
`Oct. 26, 2004
`
`Sheet 15 of 21
`Sheet 15 of 21
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`US 6,809,390 B2
`US 6,809,390 B2
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`U.S. Patent
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`Oct. 26,2004
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`Sheet 16 of 21
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`US 6,809,390 B2
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`FIG. 16
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`U.S. Patent
`
`Oct. 26, 2004
`
`Sheet 17 of 21
`
`US 6,809,390 B2
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`FIG.17
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`U.S. Patent
`
`Oct. 26, 2004
`
`Sheet 18 of 21
`
`US 6,809,390 B2
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`FIG.18
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`U.S. Patent
`U.S. Patent
`
`Oct. 26,2004
`Sheet 20 of 21
`Oct. 26, 2004 Sheet 20 of 21
`
`US 6,809,390 B2
`US 6,809,390 B2
`
`FIG. 20
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`U.S. Patent
`U.S. Patent
`
`Oct. 26, 2004
`Oct. 26, 2004
`
`Sheet 21 of 21
`Sheet 21 of 21
`
`US 6,809,390 B2
`US 6,809,390 B2
`
`FIG. 21
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`

`

`US 6,809,390 B2
`
`BACKGROUND OF THE INVEN1ION
`1. Technical Field of the Invention
`
`SUMMARY OF THE INVENTION
`
`1
`SEMICONDUCTOR CHII’MOUNTING
`SUBST民ATE,ELECT!主OOPTICALDEVICE,
`LIQUID幽 CRYSTALDEVICE,
`ELECTROLUMINESCENT DEVICE, AND
`ELECTRONIC EQUIPMENT
`
`2
`(Indium Tin Oxide) as a 酬 にrialfor ιlιじt
`sutヲstrate,and a metal such as APC or Cr as a material for
`a metal line formed on the飢1bstrate.The APC is an alloy
`manufactt川 dof Ag (silver), Pd (palladium), and Cu
`s (copper).
`The ITO has been widely used as a material for electrodes,
`etc. The ITO has a high electrical resistivity. If an ITO line
`is routed for a long path on a substrate, a resulting resistance
`becomes high, and a driving circuit cannot work normally.
`10 Contemplated as a promising material are low electrical
`The present invention relates to a semiconductor chip resistivity metal such as APC or Cr. For example, resistance
`mounting substrate bearing a semiconductor chip there~n. 。fITO per unit a削 is15 ohms, wl曲 川istanceof Cr per
`The pre印 刷 inventionalso relates to an electrooptical device unit area is 1.5 ohms and resistance of APC per unit area is
`that presents images using an electrooptical material such as O.l ohm. If a wiring pattιrn is manufacturιd of such a low
`a liquid叩 t山 ran山 ctrolum
`crystal d己vic己 thatpr己8ιntsimag己sby controlling the ori- having a long length has advantageously a low resistance.
`entation of the liquid crystal to modulate light, an electrolu-
`Fabricating a wiring pattern on a substrate of a metal such
`minescent device that presents images using an organic
`as APC or Cr advantageously lowers electrical resistance
`electrolumin凶 centelement, and electronic叫uipmentincor幽 thereof. On the other hand, the use of metals判resenta new
`20 p州 em.The metal line is subJect to corrt~ion. Due to
`po rating恥 elect削 pticaldevice.
`2. Description of the Related Art
`migration, namely, the transfer of atoms damages the metal
`Electrooptical devices such a liquid欄 crystaldevice or an line, and the quality of wiring cannot be maintained.
`出 ctr仙1minesc削 device(hereinafter referred to as叩 E.L
`The inv叩 torsof the pres叩 tinv叩 tionhave conducted a
`evice) are widely used as a display unit in electromc variety of experiments in an attempt to resolve the problem
`equipment such as a mobile computer, a mobile telephone, 25 of metallic corrosion or migration, and have reached the
`and a video camera.
`follov,ing conclusion. When a plurality of metal wirings is
`The liquid-crystal device with a liquid crystal as an a町angedside by side on a substrate, a potential difference
`electrooptical material sandwiched between a pair of elec- may take place between adjacent wirings. In other words, a
`trodes controls the orientation of the liquid crystal by relationship of an anode and a cathode is established
`controlling a voltage applied to the electrodes, modulating a 30 between the adjacent wirings, and a metallic component of
`light beam transmitted through the liquid crystal, and the anode, for example, Ag is considered to dissolve.
`In vi己w一 oftl比己 above probl己II
`t~e帥y displaying an ir叫 CSl凶 as char削 ω ar山 umeト
`a1白・
`wiring substrate, the prιsent invention has been dιveloped.
`The EL device with an EL light emission layer as an 35 It is an object of the present invention to prevent corrosion
`electrooptical material sandwiched between a pair of elec”。rmigration from taking place in a metal wiring even when
`trodes controls a voltage applied to these electrodes, thereby a wiring pattern is formed of a low electrical resi日tivity
`controlling a current fed to the EL light emission layer. The metallic material.
`light emitted by the light emission layer is thus controlled,
`displaying an image such as characters and numerals・ 40
`In the liquid心rystaldevice or the EL device, electrodes
`(1) To achieve the above object, a semiconductor chip
`for sandwiching the liquid crystal or the EL light emission mounting substrate of the present invention having a semi-
`layer are formed on one or a plurality of substrates. For conductor chip mounted thereon, includes a power source
`example, the liquid幽 crystaldevice includes a pair of sub幽 linefor supplying a supply voltage potential to the semi”
`strates facing each other having respective electrodes. On 45 conductor chip, a ground line for supplying a ground voltage
`the other hand, the EL device includes, on the surface of one potential to the semiconductor chip, an output line to which
`sutヲstrate,a pair of electrodes having an EL emission layer an output signal from the semiconductor chip is supplied,
`sandv,iched therebetween. These electrooptical devices have and an insulator layer for covering the output line, wherein
`a plurality of electrodes v,ithin an effective display area of the insulator layer is formed clear of an area between the
`the substrate, and extension lines extending from the plu幽 50power source line and the ground line.
`rality of electrodes, and metal lines, different from the
`The lines formed on the substrate are typically divided
`extension lines, are arranged outside the effective display into lines routed between an electrode and a driving element
`area. The electrodes formed within the effective display area and lines routed between an external circuit board and the
`are manufactured of oxides such as ITO, or a metal such as driving element. Migration mainly takes place in the line
`an APC alloy or Cr. When the electrodes are manufactured 55 routed between the external circuit board and the driving
`of a metal, the extension lines exten出ngtherefrom are also element. The lines routed between the external circuit board
`a metal wire.
`and the driving element include power source supply voltage
`For example, the metal lines, different from the extension lines such as a power source line and a ground line, a data
`
`lines, extending. bιyond thむむff,ιcti、fむ displayar℃a, may bじ linιfor transferring a data signal, and a control signal for
`
`山 edin a circu
`The inventors have studied the problems, and have found
`board, on which a semiconductor chip is directly mounted.
`The metal lines in this case are connected to input terminals that corrosion and migration take place at almost the same
`of the semiconductor chip, such as input bumps of the locations, particularly in the power source supply voltage
`semiconductor chip, and connected to an FPC (Flexible lines. In co山 ast,the signal li出 sare almost free from
`Pri臨 dCircl刈 leadingto an external ci川 it・
`65migration. In other words, migration occurs in the power
`It is known that the liquid剛 crystaldevice and the EL source supply voltage lines which pres叩 ta large potential
`device employ an electrically conductive oxide such as ITO difference between adjacent lines.
`
`23
`
`

`

`US 6,809,390 B2
`
`4
`3
`According the observation of the inventors, the generation number of semiconductor chips mounted on the substrate
`of migration is largely dep叩 denton an insulator layer increasing, the possibility that lines having a large potential
`covering the lines. Specifically, the line is produced by difference are adjacent to each other becomes high, and the
`forming a metal layer and th叩 bypatterning the metal layer. generation of migration is more likely. If the present inven-
`To pattern the metal layer, a photoresist is deposited on the s tion is implemιnted in that semiじonduじtorchip mounting
`metal 1叩 r,and e 由1gis釦rtl泌erpe巾 rmed.Inιti
`( 4) An electrooptical device of the present inv削 ion
`th己surfacιofth己lin己isin己vitablycontaminated. Although
`the substrate is cleaned after the formation of the line. having an electrooptical layer, includes a sutラstratefor
`contamination may occasionally not be fully removed. ノ supportingthe electrooptical layer, an electrode for driving
`the electrooptical layer, a driving element mounted on the
`If an insulator layer is deposited on the line with ~he 10 s伽 t附 ， anoutput line, co剛 山1to山 driving山 ment,
`surface thereof contaminated, the insulator layer conta1~s for supplying an output signal output from the driving
`the contamination with no escape path left. When the line 1s element to the electrode, an insulator layer for covering the
`now supplied with a voltage potential, migration tends to output line, a power source line, formed on the substrate, for
`occur more easily between adjacent lines in the power supplying a supply voltage potential to the driving element,
`supply voltage system than in other areas because the l5 and a ground line, formed on the substrate, for supplying a
`potential difference between the adjacent lines, na閉じly,the ground voltage potential to the driving elemcnt, wherein the
`magnitude of electric field is large there. When the line is insulator layer is formed clear of an area between the power
`contaminated, contamination is encapsulated by the insula- source line and the ground line.
`tor layer. The application of voltage fully establishes a The insulator layer is formed clear of the area between the
`condition under which migration easily occurs.
`20 power source line and the ground line in the electrooptical
`In accordance with the present invention, the insulator device. In this arrangement, contamination is not encapslト
`layer is formed clear of the area between the power source lated by the insulator layer even if the lines in the supply
`line and the ground line. In other words, no insulator layer voltage system are contaminated. Migration is thus pre幽
`is arranged between the power source line and the ground 川 r vented from being generated even when a high-voltage is
`line. In this arrangement, contamination is not encapsulated "'・' applied during driving.
`(5) In the electrooptical device of the prcsent invention,
`by the insulator layer even if the lines in the supply voltage
`日ystemare contaminated. Migration is thus prevented from the power source line may include a layer containing a metal
`as a m付orcomposition thι民 of.Since thιιlect巾 al附 is幽
`b己ingg己r at己dwlおιna I刊igh oltagιis appliιd 山 rir
`driving.
`30 tance of the line is set to be low, the electrical circuit is kept
`Any of a variety of metals may be used for a metal to a stabilized state, and the line may be extended even
`forming the power source supply voltage system. The APC longer.
`alloy is one of these metals. The APC may also be used for
`(6) In the electrooptical device of the present invention,
`a material of a reflective layer. The reflective layer of the the layer containing the metal as the major composition
`APC alloy provides a high reflecta附 inco山parison穴ith35 thereof may contain a metal s出 ctedfrom the group con-
`that of aluminum, while resulting in a low resistance '-' mng sisting of silver, palladium, and copper. An alloy containing
`all of silver, palladium, and copper is a so欄 calledAPC alloy.
`at the same time.
`(2) A semiconductor山中 mountingsubstrate of the The APC alloy has an excellent light 印 刷an叫 andif the
`present invention having a semiconductor chip mounted APC alloy is used for an reflective element in the electroop-
`thereon, includes an output line to which an output signal is 40 tical device, the display presents an image brighter than that
`飢1ppliedfrom the semiconductor chip mounted on the presented by a device that employs人1(aluminum) for a light
`semiconductor chip mounting substrate, a first region reflective element.
`(7) I削 heelectrooptical device of the present invention, at
`formed in a first side of the s山 strate,a second時 ionformed
`in another side intersecting the first side of the substrate, a least one of the power source line and the ground line may
`power source line, extending across the first region and the 45 include a laminate structure formed of a metal and a metal
`second region, for supplying a su~ply voltage potential to oxide. If the power sourじG linιand thιground lin己 are
`the s己rr
`fir呂tregiοn and the呂ιじondrιgiοn, for白.upplyinga grοund peeling. If the metal is cove re正iwith a metal oxide, corro日ion
`voltage potential to the semiconductor chip, an external and peeling are controlled. Further, if the power source line
`circuit board connected, in the second region, to the ground 50 and the ground line are fabricated of a metal alone, an
`line and the power削 urceline, and an insulator layer for impurity dissolves from the metal, possibly contaminating
`covering the output line, wherein the semiconductor chip is the electrooptical material such as the liquid crystal or the
`mounted in the first region, and the insulator layer is formed electroluminescent material. With the metal covered with
`clear of ( e.g., outside ol) an area between the power回 urce the metal oxide, however, such contaminationおじ0山 olled.
`line and the ground line.
`55 (8) In the electrooptical device of the present invention,
`Since the power source line and the ground line extend the electrooptical layer may be selected from an organic
`across the first region and the second region in the semi- electroluminescent layer and a liquid-crystal layer. When the
`cond1川 orcl叩 mountingst伽 trate,the lines are le附 hen吋． liquid-crystal layer is select叫 thelight tra削 削 除dti即 時h
`Migration occurs easily when the lines are lengthened, the liquid crystal is controlled by controlling the orientation
`compared to when the length of the lines is short. If the 60 of the liquid crystal, wherein polarized light transmitted
`present invention is implemented in the semiconductor chip through a polarizer and polarized light blocked by the
`mounting substrate having the above欄 referencedstructure, polarizer are used to present a display. When the electrolu剛
`the generation of migration is reliably controlled.
`minescent layer is selected, a display is presented by allow-
`(3) The semicon山 ctorcl卯 mou凶 時 Sl伽 trateof the ing organic elect叫 uminescentele町I削
`prι8ιnt inv己ntionmay forthιr inじlud己asιじondsιmiじonduc欄 65pιr pixel basis.
`(9) In the electrooptical 批判ceof the present invention,
`tor chip mounted in the second region, in addition to the first
`semiconductor chip mounted in the first region. With the the electrooptical layer may be sandwiched between the
`
`24
`
`

`

`US 6,809,390 B2
`
`6
`5
`electrode and a second electrode, and one of the electrode output line, a power source line, formed on one of the first
`and the second electrode may be connected to a switching sutヲstrateand the second substrate, for supplying a supply
`element. With this arrangement, a plurality of pixels forming voltage potential to the liquid幽αystaldriving IC, and a
`the display area is turned on and off under the control of the ground line, formed on one of the first substrate and the
`5 second sutヲstrate,for supplying a ground voltage potential to
`switching element in the switching function thereof.
`(10) In the electrooptical device of the present invention, the liquid-c巾 taldriving IC, wl則 einthe ins山 torlayer is
`the switching element may be selected from a thin-film formed clear of an area between the power source line and
`transistor and a thin-film diode. The thin-film transistor is a the ground line.
`three-terminal sv,itching element. The thin-film diodιis a In thιliquid-crystal device thus constructed, the insulator
`two”terminal sv,itching element.
`10 layer is formed clear of the area between the power source
`(ll)An elιctroοptiじaldeviじcofthιprιsenιtinιVιn
`fur thιr includιa SιCゆndιlectrodefor driving thιelιctroop剛 isarranged bιtwιen the power source line and the ground
`tical layer.百1eelectrooptical layer is sandwiched between line. In this arrangement, contamination is not encapsulated
`the electrode and the second electrode. and includes a by the insulator layer even江thelines in the supply voltage
`se印 刷 drivingelement mounted on the s1伽 trate， 叩 insu幽 15system are contaminated in the manufacturing process of the
`lator layer for covering the output line, a second power liquid-crystal device. Migration is thus prev叩 tee!from
`source line, formed on the substrate, for supplying a supply being generated even when a high-voltage is applied during
`voltage potential to the second driving element, and a second driving.
`ground lin , formed o叩n
`voltagιpotential to thιsιcond driving elem己nt,and wherιin 20 the power sourじ己 line may includ己 a laminate structure
`the insulator layer is formed clear of an area between the containing a plurality of layers, and one of the first electrode
`second power source line and the second ground line.
`and the second electrode, formed on the same substrate as
`The electrooptical device thus constructed includes two that bearing the power source line, may also include a
`driving elements mounted on one substrate, and the insulator laminate structure of a plurality of layers. In other words, the
`layer is formed clear of the area between the second power 25 electrode and the power source line formed on the same
`source line and the second ground line.
`substrate are fabricated of the same layer structur℃. In this
`(12) An electrooptical device of the prese凶 i町 6凶 on arrangement, the power source line and the electrode are
`having an electrooptical layer, includes a sutヲstratefor concurrently fabricated in the same process. The manufac-
`
`supp。rtingthe出 ctroopticall叩 r,an出 ctrodefor driving 30 turing proce悩isthus simplifi~d.
`(1分Theliquid-crystal device of the present invention
`the electrooptical layer, a driving element mounted on the
`substrate, an output line, connected to the driving element, may further include a reflective layer, wherein the laminate
`for supplying an output signal output from the driving structure contains a metal layer and a metal oxide layer
`element to the electrode, an insulator layer for covering the formed on the metal layer, and wherein the metal layer is
`output line, a power source line, formed on the substrate, for 35 formιd of the same layer as that forming the reflective layer.
`supplying a supply voltage potential to the driving element, In this arrangement, the manufacturing process of the liquid”
`a ground line, formed on the sutラstrate,for supplying a crystal device is simplified
`(16) A liquid-crystal device of the present inve凶。n
`ground voltage potential to the drivingιlement, a control
`line, formed on the sutフstrate,for supplying a control signal includes a first substrate having a first electrode, a second
`to control the driving element, and a data line, formed on the 40 substrate having a second electrode and arranged to face the
`飢1bstrate,for supplying a data signal to the driving element. first substrate, a liquid心rystallayer interposed between the
`The insulator layer is formed clear of one of an area (1) first electrode and the second electrode, a first liquid幽 crystal
`between the power source line and the control line, an area driving IC mounted on a first side of the first substrate
`(2) between the power source line and the data li肌 叩 area extending beyond the area thereof coextending with the
`(3) between the ground line and the co附 olli肌 andan area 45 secc d substrate, a seco凶 liquid-crystaldriv
`(4) b己tw己enthe gro叩 dli即 a凶 th己 datali肌
`onan extending portion of a second side of the first
`In the electrooptical device in this arrangement, the ins1ト substratι，intersectingthe first side of the first substrate, a
`lator layer is patterned in relation to the power source line plurality of lines connected to one