Petitioner Bluehouse Global Ltd.
`Petitioner Bluehouse Global Ltd.
`
`Ex. 1001
`EX. 1001
`
`

`

`(12) United States Patent
`US 9,281,405 B2
`(10) Patent No.:
`(45) Date of Patent:
`Mar. 8, 2016
`Sasagawa et al.
`
`US009281405B2
`
`(54) SEMICONDUCTOR DEVICE AND METHOD
`FOR MANUFACTURING THE SAME
`
`(71) Applicant: Semiconductor Energy Laboratory
`Co., Ltd., Atsugi-shi, Kanagawa-ken
`(JP)
`
`(72)
`
`Inventors: Shinya Sasagawa, Chigasaki (JP);
`Hideomi Suzawa, Atsugi (JP)
`
`(73) Assignee: Semiconductor Energy Laboratory
`Co., Ltd., Kanagawa-ken (JP)
`
`( * ) Notice:
`
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 0 days.
`
`CN
`EP
`
`USPC ............................................................ 257/43
`
`See application file for complete search history.
`
`(56)
`
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`
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`
`Filed:
`
`Jul. 22, 2014
`
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`
`Prior Publication Data
`
`US 2014/0332801A1
`
`NOV. 13,2014
`
`Related US. Application Data
`
`(62) Division of application No. 13/716,891, filed on Dec.
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`
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`Kanek0.K et a1., “Highly Reliable BEOL-Transistor with Oxygen-
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`
`(Continued)
`
`Primary Examiner 7 David S Blum
`(74) Attorney, Agent, or Firm 7 Robinson Intellectual
`Property Law Office; Eric J. Robinson
`
`Dec. 23, 2011
`Dec. 23, 2011
`
`(JP) ................................. 2011-282438
`
`(JP)
`..... 2011-282511
`
`(57)
`
`ABSTRACT
`
`(51)
`
`Int. Cl.
`H01L 29/80
`H01L 31/0288
`
`(2006.01)
`(2006.01)
`(Continued)
`
`(52) US. Cl.
`CPC ........ H01L 29/7869 (2013.01); H01L 29/1033
`(2013.01); H01L 29/24 (2013.01);
`(Continued)
`
`(58) Field of Classification Search
`CPC ............ H01L 29/78; H01L 29/166477; H01L
`29/7869
`
`A bottom-gate transistor with a short channel length and a
`method for manufacturing the transistor are provided. A hot-
`tom-gate transistor with a short channel length in which por-
`tions of a source electrode and a drain electrode which are
`
`proximate to a channel formation region are thinner than
`other portions thereof was devised. In addition, the portions
`of the source electrode and the drain electrode which are
`
`proximate to the channel formation region are formed in a
`later step than the other portions thereof, whereby a bottom-
`gate transistor with a short channel length can be manufac-
`tured.
`
`22 Claims, 17 Drawing Sheets
`
`407
`
`
`
`
`\i \
`
`
`
`
`\ \‘
`“ \\\\\\\\\\\\\\\\\\\\\\\\\‘
`k\\‘$\\§.“‘“n“““““““‘\&\VL\\V
`WRWK\K\
`
`——a r r w
`
`a- -
`--
`-
`_
`- A“,
`6'6"“???3’2‘n-
`Ivarfaar’fa’a
`
`
`
`403
`454b402405b
`
`
`405a
`400
`
`432 436
`454a 401
`
`
`
`
`
`BLUEHOUSE EXHIBIT 1001
`Page 2 of 37
`
`BLUEHOUSE EXHIBIT 1001
`Page 2 of 37
`
`

`

`US 9,281,405 B2
`
`Page 2
`
`(51)
`
`Int. Cl.
`H01L 31/112
`H01L 29/786
`H01L 29/66
`H01L 29/78
`H01L 29/417
`H01L 29/10
`H01L 29/24
`H01L29/423
`HOILZ 7” 15
`(52) U.S.Cl.
`CPC
`
`(200601)
`(200601)
`(2006.01)
`(2006.01)
`(200601)
`(200601)
`(2006.01)
`(200601)
`(200601)
`
`H01L29/41733(2013.01);H01L 29/423515
`(2013.01);H01L 29/66477(2013.01);H01L
`29/66969 (2013.01); H01L 29/78 (2013.01);
`H01L 29/781506 (201301); H01L 29/786315
`(2013.01); H01L 29/78696 (2013.01); H01L
`27/1156 (2013.01)
`
`(56)
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`US 9,281,405 B2
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