1, ® MOTOROLA
`
`DL135
`REV 2
`
`
`
`‘3w.v
`
`POWER MOSFET
`TRANSISTOR DATA
`
`IPR2018-00039
`
`Dynacraft V Mattel
`
`Dynacraft BSC Inc
`
`Exhibit 1009
`
`

`

`® MOTOROLA
`
`POWER MOSFET TRANSISTOR DATA
`
`Prepared by
`Technical Information Center
`
`Preface
`
`After several years of development, Motorola introduced its first power MOSFETs in 1980. Several technologies
`were evaluated and the final choice was the double diffused (DMOS) process which Motorola has acronymed
`TMOS. This process is highly manufacturable and is capable of producing devices with the best characteristics
`for product needed for power control. Most suppliers of power MOSFETs use the basic DMOS process.
`The key to success of power MOSFETs is the control of vertical current flow, which enables suppliers to
`reduce chip sizes comparable to bipolar transistors. This development opens a new dimension for designers
`of power control systems.
`This manual is intended to give the users of power MOSFETs the basic information on the product, application
`ideas of power MOSFETs and data sheets of the broadest line of power MOSFETs with a variety of package
`configurations. The product offering is far from complete. New products will be introduced and old products will
`be improved, offering designers an even better selection of products for their designs.
`Motorola has a long history of supplying high quality power transistors in large volume to the military, auto(cid:173)
`motive, consumer, industrial and computer markets. Being the leading supplier of power transistors in the world,
`we strive to serve our customers' needs to maintain our leadership position.
`
`Printed in U.S.A.
`
`Third Edrtion
`First Printing
`©MOTOROLA INC. , 1988
`"All Rights Reserved"
`
`

`

`rises higher than 16 V; the transient suppressor protects
`the MOSFETs from supply spikes greater than 28 V.
`In this design, the MOSFETs require heat sinking to
`keep their junction temperatures less than 150°C in worst(cid:173)
`case conditions (that could occur, for example, with a
`16 V supply, 100°C ambient temperature and a stalled
`motor). As an option, a current-sensing circuit can be
`added to gate-off the power FETs after detecting a stall
`condition.
`
`PWM Motor Speed Control
`
`FETs can be used to considerable advantage for sim(cid:173)
`plifying permanent-magnet motor speed control. The cir(cid:173)
`cuit shown in Figure 8-31 provides efficient pulse-width
`
`modulated control with a minimum number of compo(cid:173)
`nents. The key feature is direct drive of the power FET
`from a CMOS control IC. The result is a control system
`with minimized parts count.
`The control system is based upon the MC14528B dual
`monostable multivibrator. One-half of the monostable is
`connected in an astable mode, producing a pulse oscil(cid:173)
`lator. The remaining half is then used as a one-shot, with
`its adjustable pulse-width determining the duty cycle and,
`therefore, motor speed.
`In addition to its simplicity, the circui) of Figure 8-31 is
`notable for its low standby power drain. The combination
`CMOS control and TMOS power gives a very low quies(cid:173)
`cent current drain that is desirable in battery operated
`applications.
`
`BACK EMF SENSE
`CIRCUIT DISABLED
`
`PEAK CURRENTS > 50 A
`
`POWER DIS. - 140 W
`
`10 A/DIV
`
`Hori
`Pow
`in high
`advant
`output:
`reliabil
`Drivi
`nifican
`examp
`inated,
`The
`to diffe
`practic
`ingsdL
`if the I
`retrace
`during
`can be
`age is
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`failure.
`of sire:
`tends t
`reliabili
`related
`circuitr!
`Spee
`rate, 1.
`of the t
`in a fie
`is not a
`and wit
`
`(a)
`
`1.0 SEC/DIV
`
`I
`
`' I
`I
`I
`
`' ' •
`
`. -
`POWER DIS. - 14 W l_LLLLLLLL~ 10 A/DIV
`
`BACK EMF SENSE
`CKT ENABLED
`
`PEAK CURRENT :,;;: 30 A
`
`. ~ -
`
`'
`I
`
`•
`
`•
`II
`
`'
`
`I
`I
`
`.
`.
`
`;
`
`(b)
`
`1.0SEOOIV
`
`VERTICAL
`
`HORIZONTAL
`
`10 A/DIV
`
`1.0 SEC/DIV
`
`AGURE 8-30 - COMPARISON OF " H" SWITCH PEAK CURRENTS
`DURING MAXIMUM FORWARD TO REVERSE SWITCHING WITH
`MANUAL TOGGLE SWITCH
`
`MOTOROLA TMOS POWER MOSFET DATA
`
`1-8-22
`
`

`

`of compo(cid:173)
`power FET
`1trol system
`
`45286 dual
`,nostable is
`pulse oscil(cid:173)
`e-shot, with
`, cycle and,
`
`1ure 8-31 is
`·om bi nation
`· low quies(cid:173)
`y operated
`
`Horizontal Deflection Circuits
`Power MOSFETs can be a good alternative to bipolars
`in high resolution CRT sweep circuits. The most obvious
`advantage is simplicity. However, MOSFET horizontal
`outputs also offer significant benefits in terms of increased
`reliability and faster switching times.
`Drive simplification with the MOSFET is even more sig(cid:173)
`nificant than in the preceeding switching power supply
`examples. In most cases, a base-drive transformer is elim(cid:173)
`inated, as well as diidt wave shaping networks.
`The reliability issue is a little more complex, and relates
`to differences in SOA characteristics. It is normal design
`practice to exceed bipolar collector-emitter breakdown rat(cid:173)
`ings during the retrace pulse transition. This is permissible
`if the base-emitter voltage is held negative during the
`retrace period. If, however, a positive noise pulse occurs
`during the retrace period, the bipolar base-emitter junction
`can become forward biased when collector-emitter volt(cid:173)
`age is greater than VcEO(sus)· The bipolar's safe oper(cid:173)
`ating area is then violated, creating a substantial risk of
`lailure. MOSFETs, on the other hand, will handle this type
`of stress quite readily, since their FBSOA capability ex(cid:173)
`tends beyond peak retrace voltage. Therefore, increased
`reliability with the MOSFET horizontal output _is directly
`related to the probability of noise occurring in the drive
`circuitry.
`Speed is also an important issue. At a 30 kHz scan
`rate, 1 .0 µ,s of bipolar storage-time delay represents 3%
`of the horizontal line period, or a loss of 30 lines of data
`in a field of 1024 lines. In addition, bipolar storage time
`is not a fixed constant, but changes from device to device
`and with temperature. A horizontal phase locked loop can
`
`be added to compensate for the storage-time delays in
`the horizontal output stage. The active video data time
`may also be cut back, accordingly, to allow for internal
`horizontal timing delay.
`Based upon these considerations, effective use of the
`bipolar transistor at high scan frequencies requires a com(cid:173)
`plex base drive circuit, custom selection of the bipolar
`device for minimum storage-time variation, and an ac(cid:173)
`curate phase locked loop to compensate for saturation
`time delays. Power MOSFETs, on the other hand, can be
`driven from a CMOS IC, do not require critical parameter
`screening, exhibit minimal turn-off delay, and do not re(cid:173)
`quire a phase locked loop for correcting device-induced
`timing errors.
`
`Design Example
`The power MOSFET, until recently, could not handle
`much current at voltages above 500 V. Recent technology
`developments have pushed this limit up to the 1000 V
`range with increased current ratings. Therefore, a power
`MOSFET can now be selected for computer CRT display
`systems with power supply requirements ranging from
`12 V to 75 V.
`The standard horizontal raster scan system is used in
`this design. That is, the horizontal yoke and flyback trans(cid:173)
`former are both switched by one output device. It should
`be pointed out that the power MOSFET has been switched
`up to 120 kHz scan rates, but due to other device con(cid:173)
`straints, the CRT anode high voltage network's perfor(cid:173)
`mance is very marginal at this high frequency rate. Even
`a scan frequency of 30 kHz is pushing the limits of the
`high-voltage rectifier and associated components.
`
`On/Off
`
`+ 14V
`
`1N5246 16V
`
`1.0 k
`
`-=
`
`2.0 k
`
`I adj
`
`50 k I spd
`
`0.1 µ.F
`
`10 k
`1.0 M
`
`1N918
`
`T1 T2
`
`co Vee Tl
`
`T2
`
`Co
`
`MC14528B
`
`A
`
`B Q Q Vss A B Q Q
`
`G
`
`15 k
`
`s
`
`Power MOSFET
`MTP5N05
`2.0 A MTR
`MTP15N05E
`6.0 A MTR
`15 A MTR
`MTP25N05E
`
`FIGURE 8-31 - POWER
`MOSFET MOTOR SPEED CONTROL CIRCUIT
`
`MOTOROLA TMOS POWER MOSFET DATA
`
`1-8-23
`
`