gi [oF
`
`Journal of
`
`APPLIED PHYSICS
`
`a publication of the American Institute of Physics
`
`
`p =
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`

`CODEN: JAPIAU
`
`Journal of
` SICS
`APPLIED Pi
`
`ISSN: 0021-8979
`
`Steven J. Rothman,Editor
`
`Lester Guttman, Consulting Editor
`Robert C.Birtcher, Gian P. Felcher, Robert E. Holland, and John N. Mundy,Associate Editors
`Catherine M.Dial, Assistant to the Editor
`
`Term ending 31 December 1992
`
`David K. Biegelsen
`Robert L. Byer
`Frans Spaepen
`
`Editorial Board
`
`Term ending 31 December1993
`
`Term ending 31 December 1994
`
`L. Eric Cross
`D. K. Finnemore
`J. Murray Gibson
`Frans W.Saris
`
`William R. Frensley
`Julia M. Phillips
`Paul M. Solomon
`
`AIP EDITORIAL STAFF: Deborah McHone, Editorial Supervisor; Julia Macklin, Chief Production Editor; Cindy Klingensmith and Marilyn
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`The Journal ofApplied Physics is published semimonthly
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`and to industry. (Prior to 1937, the Journal carried the name
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`Copyright 1992, AmericanInstitute of Physics. Individual
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`12/18/91
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`

`

`Vol. 71, No. 11, 1 June 1992
`Journal of APPLIED PHYSICS
`TT
`APPLIED PHYSICS REVIEWS
`
`R23 Quantitative emission microscopy
`
`J. Kélzer, C. Boit, A. Dallmann, G.
`Deboy, J. Otto, D. Weinmann
`
`GENERALPHYSICS: Nuclear, Atomic, and Molecular (PACS 01—36)
`5303 Representation oftails of periodic and infinite-range signals: Towards a
`treatment for truncation
`
`A. C. Vermeulen, R. Delhez, Th. H.
`de Keijser, E. J. Mittemeijer
`CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41 —52)
`5310 Instabilities in annealed proton exchange waveguidesin lithium tantalate
`Paul J. Matthews, Alan R.
`Mickelson
`
`5318 Propagation of several wavesin a nonlinear medium displaying an optical
`activity: Application to four-wave mixing in Bi;(Ge;Si)Oz5 crystals
`5323 AlGaAs diodelaserblue shift resulting from fast neutronirradiation
`
`5332 Effect of optical activity on higher-orderself-diffraction in absorptive
`photorefractive medium: Transmission geometry for two-wave mixing
`5338 Magnetic field enhanced performanceof a copperhollow anode cathode
`laser
`5344 Longitudinal modestability difference in Se- and Si-doped AlGaAslasers
`
`M. Sylla, P. X. Nguyen, D. Rouede,
`G. Rivoire
`J. C. Camparo, S. B. Delcamp,R.
`P. Frueholz
`
`Amitava Roy, Kehar Singh
`
`Z. Zhang, N. D. Perry, R. C. Tobin
`
`H. Sugiura, A. Noma, M. Yuri, M.
`Hirose, M. Kume,|. Ohta, M.
`Kazumura
`
`Katsuhiko Komatsu, Fumihiko
`Kannari, Minoru Obara
`Graebner, S. Jin, G. W.
`ott, B. Bacon, L. Seibles, W.
`Banholz
`
`5347 Gain measurements of high-pressure ultraviolet-preionized self-sustained
`discharge pumped atomic xenon laser
`
`5353 Anisotropic thermal conductivity in chemical vapor deposition diamond
`
`
`
`-
`(Continued)
` Subscription Prices* (1992)
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`Microfilm Subscriptions of complete volumesof the Journal of
`Applied Physics are available on 16 mm and 35 mm. The Journalof
`Applied Physics also appears on a monthly basis in Current Physics
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`by the American Institute of Physics and its member societies. A
`Microfilm Catalog is available on request. The Journal of Applied
`Physics is indexed quarterly in Current Physics Index, a subject and
`authorindex (with abstracts) to all journals published by AIP andits
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`cial Supplements; $55.00. Volumes 1-23 (1931-1952) are available
`onlyon microfilm.
`The Journal of Applied Physics (ISSN: 0021-8979) is published
`semimonthly by the AmericanInstitute of Physics, 500 Sunnyside
`Blvd., Woodbury, NY 11797. Second-class postage paid at Wood-
`bury, NY, and additional mailing offices. POSTMASTER:Sendad-
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`Page 3 of 19
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`Page 3 of 19
`
`

`

`Vol. 71, No. 11, 1 June 1992
`Journal of APPLIED PHYSICS
`aaaciseldeeacedetergeedae
`
`APPLIED PHYSICS REVIEWS
`
`R23 Quantitative emission microscopy
`
`J. Kélzer, C. Boit, A. Dallmann, G.
`Deboy, J. Otto, D. Weinmann
`
`GENERALPHYSICS:Nuclear, Atomic, and Molecular (PACS 01 — 36)
`5303 Representation oftails of periodic and infinite-range signals: Towards a
`treatment for truncation
`
`A. C. Vermeulen, R. Delhez, Th. H.
`de Keijser, E. J. Mittemeijer
`CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41 —52)
`5310
`Instabilities in annealed proton exchange waveguidesin lithium tantalate
`Paul J. Matthews, Alan R.
`Mickelson
`
`5318 Propagation of several wavesin a nonlinear medium displaying an optical
`activity: Application to four-wave mixing in Bi,2(Ge;Si)Ox9 crystals
`5323 AlGaAsdiodelaser blue shift resulting from fast neutronirradiation
`
`5332 Effect of optical activity on higher-orderself-diffraction in absorptive
`photorefractive medium: Transmission geometry for two-wave mixing
`5338 Magnetic field enhanced performance of a copper hollow anode cathode
`laser
`5344 Longitudinal modestability difference in Se- and Si-doped AlGaAslasers
`
`M. Sylla, P. X. Nguyen, D. Rouede,
`G. Rivoire
`J. C. Camparo, S. B. Delcamp,R.
`P. Frueholz
`
`Amitava Roy, Kehar Singh
`
`Z. Zhang, N. D. Perry, R. C. Tobin
`
`H. Sugiura, A. Noma, M. Yuri, M.
`Hirose, M. Kume,|. Ohta, M.
`Kazumura
`
`Katsuhiko Komatsu, Fumihiko
`Kannari, Minoru Obara
`
`5347 Gain measurements of high-pressure ultraviolet-preionized self-sustained
`discharge pumped atomic xenonlaser
`
`Anisotropic thermal conductivity in chemical vapor deposition diamond Subscription Prices* (1992)
`
`
`berssfor missing journal issues
`Optional
`only if received within six months of
`without-eharge
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`Can., Mex.,
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`Reprints of individual articles in this journal may be ordered
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`
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`20 pages. Beyond 20 pagesthere is a surcharge of $0.20 perpage.
`Air mail delivery is available. Orders are filled within one week of
`receipt or of the date of publication, whicheveris later. Send orders
`to the AIP Member and Subscriber ServicesDivision, 500 Sunnyside
`Blvd., Woodbury, NY 11797.
`Copying Fees: The code that appears on thefirst page ofarti-
`clesin this journal gives the fee for each copy of the article made
`beyond the free copying permitted by AIP. (See statement under
`“Copyright” elsewherein this journal.) If no code appears, no fee
`applies. The fee for pre-1978 articles is $0.25 per copy. With the
`exception of copying for advertising and promotional purposes, the
`express permission of AIP is not required provided the fee is paid
`through the Copyright Clearance Center, Inc. (CCC), 21 Congress
`St, Salem, MA 01970. Contact the CCCfor information on how to
`report copying and remit payment.
`Microfilm Subscriptions of complete volumesof the Journal of
`Applied Physics are available on 16 mm and 35 mm. The Journalof
`Applied Physics also appears on a monthly basis in Current Physics
`Microform (CPM) Section 1 along with 32 other journals published
`by the American Institute of Physics and its member societies. A
`Microfilm Catalog is available on request. The Journal of Applied
`Physics is indexed quarterly in Current Physics Index, a subject and
`author index (with abstracts) to all journals published by AIP andits
`membersocieties.
`
`*The Journal is available on microfiche at $160 per year to members and
`$1240 peryearat the regularrate.
`‘AIP Memberandaffiliated Societies.
`‘Regular rate subscriptions to Europe, Asia, Africa, and Oceania include air
`freight service.
`
`Back-NumberPrices. Single copies from Vol. 24 (1953) through
`Vol. 55 (1984): $55.00; Vol. 56 (1984) and thereafter; $55.00. Spe-
`cial Supplements; $55.00. Volumes 1-23 (1931-1952) are available
`onlyon microfilm.
`The Journal of Applied Physics (ISSN: 0021-8979) is published
`semimonthly by the American Institute of Physics, 500 Sunnyside
`Blvd., Woodbury, NY 11797. Second-class postage paid at Wood-
`bury, NY, and additional mailing offices. POSTMASTER: Send ad-
`dress changes to Journal of Applied Physics, 500 Sunnyside Bivd.,
`Woodbury, NY 11797.
`Subscription, renewals, address changes, and single-copy
`Orders should be addressed to AIP Member and Subscriber Ser-
`vices Division, 500 Sunnyside Blvd., Woodbury, NY 11797. Allow at
`least six weeks advance notice. For address changes please send
`both old and new addressesand,if possible, include a mailing label
`from the wrapperof a recent issue. For your convenience a change
`of address form is included in every issue of Physics Today;
`
`Page 4 of 19
`
`
`
`Page 4 of 19
`
`

`

`Two-dimensional inverse heat conduction problem of estimating the
`time-varying strength of a line heat source
`Longitudinal electron diffusion coefficients in gases: Noble gases
`Mass spectroscopic study of CH, radicals produced in a hollow cathode
`dischargecell
`Frequency up-conversion of a high-power microwave pulse propagating in
`5376
`a self-generated plasma
`Gregory Benford, A. Ben-Amar
`Resonator amplification of microwave emission fromarelativistic
`5381
`Baranga
`beam-plasma system
`mal Properties (PACS 61 —68)
`CONDENSED MATTER:Structure, Mechanical, and Ther
`R. G. Vardiman
`The formation and annealing of dislocation damage from high-dose
`5386
`self-ion implantation of aluminum
`Calorimetric measurements of the thermal relaxation in nanocrystalline
`platinum
`Bonding properties of glow-discharge polycrystalline and amorphousSi-C
`films studied by x-ray diffraction and x-ray photoelectron spectroscopy
`Scanning tunneling microscope-promoted growth of nanometer-scale,
`uniform gold stripes on reconstructed Au(111) surfaces
`Molecular-dynamics simulations of bulk and surface damage production
`in low-energy Cu-Cu bombardment
`Thermally stimulated current of Si-ion-implanted GaAs
`Recrystallization behaviorofsilicon implanted with iron
`
`5357
`
`5363
`
`5372
`
`5391
`
`5395
`5401
`
`5410
`
`5419
`
`5423
`
`5427
`
`5433
`
`Structure and crystallization of low-pressure chemical vapor deposited
`silicon films using SigHg gas
`Tantalum as a diffusion barrier between copper and silicon: Failure
`mechanism andeffect of nitrogen additions
`
`5445
`
`5450
`
`A real time study of the growth of microcrystalline silicon on transparent
`conducting oxide substrates
`Study of theinitial formation of silicon carbide by reaction of tetraethyl
`silane with silicon
`Effects of amorphoustitanium silicide on subsequently formed crystalline
`compound prepared by two-step thermal process
`CONDENSED MATTER:Electrical and Magnetic Properties (PACS 71—76)
`Investigation of the photorefractive effectin BisTeOs
`5465
`
`5460
`
`5474
`
`5479
`
`5484
`
`5489
`
`5500
`
`5504
`
`5517
`
`Phosphorusdiffusion into silicon from a spin-on source using rapid
`thermal processing
`Investigations of the electrical properties of electrodeposited CulnSe, thin
`ilms
`Saturation of the surfacefield with external bias for metalorganic
`chemical vapor deposition epilayer GaAs/GaAs as determined by
`electroreflection spectroscopy
`Progress towardsspin-polarized scanning tunneling microscopy
`
`Hysteresis of the work function of Co(0001) surface resulting from an
`allotropic transformation
`A simplified and improved modelof ideal and almost ideal silicon p-n
`junctions: The role of oxygen
`Miniband Bloch conduction in semiconductor superlattices
`
`Page 5 of 19
`
`(Continued)
`
`A. J. Silva Neto, M. N. Ozisik
`
`J. L. Pack, R. E. Voshall, A. V.
`Phelps, L. E. Kline
`M. M. Sanz, L. Abad, V. J. Herrero,
`\. Tanarro
`
`S. P. Kuo, A. Ren
`
`A. Tschépe,R.Birringer, H. Gleiter
`
`T. Takeshita, Y. Kurata, S.
`Hasegawa
`Zhouhang Wang, Martin Moskovits
`
`Frank Karetta, Herbert M.
`Urbassek
`Y. H. Lee, T. W. Kang, T. W. Kim
`
`J. P. de Souza, L. Amaral, P. F. P.
`Fichtner
`C. H. Hong, C. Y. Park, H.-J. Kim
`
`Karen Holloway, Peter M. Fryer,
`Cyril Cabral, Jr., J. M. E. Harper, P.
`J. Bailey, K. H. Kelleher
`M. Fang, B. Drevillon
`
`V. M. Bermudez
`
`H. G. Nam, |. Chung, R. W. Bene
`
`|. Foldvari, Huimin Liu, Richard C.
`Powell, A. Peter
`B. Hartiti, A. Slaoui, J. C. Muller, R.
`Stuck, P. Siffert
`C. Guillén, J. Herrero
`
`Henry Poras, George J. Goldsmith,
`Noren Pan
`
`|. V. Shvets, R. Wiesendanger, D.
`Birgler, G. Tarrach, H.-J.
`Gintherodt, J. M. D. Coey
`S. Saito, K. Takeda, T. Soumura,
`M. Ohki, T. Tani, T. Maeda
`Bruno Pellegrini
`
`X. L. Lei,
`
`|. C. da Cunha Lima
`
`Page 5 of 19
`
`

`

`5523
`
`5531
`
`5539
`
`5543
`
`5550
`
`5554
`
`5560
`
`5565
`
`~ 5569
`
`5572
`
`5579
`
`5585
`
`Analysis of dark current-voltage characteristics of Al/chlorophyll a/Ag
`sandwichcells
`Investigation of (111) strained layers: Growth, photoluminescence, and
`internal electric fields
`Properties of NiFe-Nfilms prepared byrf sputtering in nitrogen-argon gas
`mixtures
`in situ monitoring and Hall measurements of GaN grown with GaN buffer
`ayers
`Calculations of the microwave conductivity of high-T, superconducting
`thin films from powertransmission measurements
`Probingof high 7, sample texturing with a potentiometric ring
`
`Epitaxial growth of YBazCu307_, thin films on Si(100) with zirconia
`buffers of varying crystalline quality and structure
`
`A theoretical analysis of the thickness dependenceof the localization
`effect on the normal-stateresistivities in high-T, Y;BazCuz07_ thin films
`Abnormal J, changes against temperature of the Bi; gPDp4SrzCa,Cu30,
`
`Low-resistivity epitaxial YBazCu,0, thin films with improved
`microstructure and reduced microwave losses
`
`Energy barriers for thermal reversal of interacting single domain particles
`
`Magnetic properties of ternary Co-B-C melt spunalloys amorphized over
`an extended concentration range
`
`CONDENSED MATTER:Dielectric and Optical Properties (PACS 77—79)
`5591
`Glassy polarization in the ferroelectric tungsten bronze (Ba,Sr)Nb2O,
`
`5596
`
`5601
`
`5606
`
`5610
`
`5614
`
`5619
`
`5623
`
`5629
`
`Densification induced dielectric properties change in amorphous BaTiO,
`thin films
`
`Optical properties of epitaxial CoSi./Si and CoSi, particles in Si from
`0.062 to 2.76 eV
`Positron annihilation studies in the field induced depletion regions of
`metal-oxide-semiconductor structures
`
`Comparison of band structure calculations and photoluminescence
`experiments on HgTe/CdTe superlattices grown by molecular beam
`epitaxy
`.
`Luminescence characteristics of the (GaP),(GaAs),/GaAs atomiclayer
`short-period superlattices
`Nonequilibrium luminescence at the Ey+ Ao gap in GaAswith Si-5 doping
`
`Low energy carbon ion bombardment on indium phosphide andits
`implications for alkane-based reactive ion etching
`Investigation by laser-induced fluorescence of surface vaporization during
`the pulsed CO,laserirradiation of a titanium sample in an ambient gas
`
`CROSS-DISCIPLINARY PHYSICS (PACS81 —98)
`5635 Films and junctions of cadmium zinc telluride
`
`A. Oueriagli, H. Kassi, S.
`Hotchandani, R. M. Leblanc
`P, J. Harshman, S. Wang
`
`K. K. Shih, M. E. Re, T. Takamori,
`D. B. Dove
`
`S. Nakamura, T. Mukai, M. Senoh
`
`P. H. Wu, Qian Min
`
`Thomas W. Krause, R. K. Nkum,
`W.R. Datars, Viadimir V. Gridin
`A. Lubig, Ch. Buchal, J. Schubert,
`C. Copetti, D. Guggi, C. L. Jia, B.
`Stritzker
`
`J. H. Tyan, J. T. Lue
`
`Yoshitake Nishi, Kazuo Nozaki,
`Shinichi Ichimura
`
`U. Poppe, N. Klein, U. Dahne, H.
`Soltner, C. L. Jia, B. Kabius, K.
`Urban, A. Lubig, K. Schmidt, S.
`Hensen, S. Orbach, G. Miller, H.
`Piel
`Wenjie Chen, Shufeng Zhang,H.
`Neal Bertram
`M. Pont, R. Puzniak, K. V. Rao, A.
`Inoue
`
`A. S. Bhalla, R. Guo, L. E. Cross,
`G. Burns, F. H. Dacol, R. R.
`Neurgaonkar
`P. Li, J. F. McDonald, T.-M. Lu
`
`Z.-C. Wu, E. T. Arakawa, J. R.
`Jimenez, L. J. Schowalter
`P. Asoka-Kumar, T. C. Leung, K.
`G. Lynn, B. Nielsen, M. P. Forcier,
`Z. A. Weinberg, G. W. Rubloff
`M. M. Kraus, M. M. Regnet, C. R.
`Becker, R. N. Bicknell-Tassius, G.
`Landwehr
`
`Tsugunori Takanohashi, Masashi
`Ozeki
`
`N. Mestres, F. Cerdeira, F.
`Meseguer, A. Ruiz, J. P. Silveira,
`F. Briones, K. Ploog
`P. F. A. Meharg, E. A. Ogryzlo,|.
`Bello, W. M. Lau
`J. Hermann, C. Boulmer-Leborgne,
`B. Dubreuil, !. N. Mihailescu
`
`T. L. Chu, S. S. Chu, C. Ferekides,
`J. Britt
`
`(Continued)
`
`Page 6 of 19
`
`Page 6 of 19
`
`

`

`5641
`
`5646
`
`5650
`
`5654
`
`Differences in physical properties of hydrogenated and fluorinated
`amorphoussilicon carbide prepared by reactive sputtering
`Morphology of hydrofluoric acid and ammoniumfluoride-treated silicon
`surfaces studied by surface infrared spectroscopy
`Atomic disorder induced by mechanical milling in the Nb,Au intermetallic
`compound
`Effects of plasma and/or 193 nm excimer-laserirradiation in
`chemical-vapor deposition of boron films from BoHg+He
`
`5665
`
`5675
`
`Influences of a high excitation frequency (70 MHz) in the glow discharge
`technique on the process plasma and the properties of hydrogenated
`amorphoussilicon
`Pulsed laser deposition of diamond-like carbonfilms
`
`5685
`
`5689
`
`5694
`
`5699
`
`Analysis of the guidance of electromagnetic waves by a deformed planar
`waveguide with parabolic cylindrical boundaries
`A vectorial finite element formulation for electromagnetic wave
`propagation in helical systems
`Interactions between implanted Mg and base p-type dopant (Be,Zn,C)in
`heterojunction bipolar transistor devices
`A simple technique for simultaneous fabrication of p*/n diodes and
`ohmic contacts on n-type InP
`
`COMMUNICATIONS
`A modelfor the Fe-related emission at 3057 cm~'
`
`5703
`
`in GaAs
`
`5706
`
`5709
`
`5712
`
`5715
`
`5718
`
`5721
`
`5724
`
`5727
`
`5728
`
`5729
`
`Auger generation suppression in narrow-gap semiconductors using the
`magnetoconcentration effect
`Méssbauer-Fresnel zone plate
`
`Efficient pulsed microwave excitation of a high-pressure excimer
`discharge
`
`Disordering of AlGaAs/GaAs quantum well structures using low dose
`oxygen implantation
`Pulsed laser deposition of stoichiometric LiNbOgthin films by using O2
`and Ar gas mixtures as ambients
`
`The effects of pressure on the nucleation rate of an undercooled liquid
`
`Substrate bias effects on diamond synthesis in a magnetoactive
`microwave plasma
`Comments on the steady state photocarrier grating technique to measure
`diffusion lengths
`Reply to “Comments on the steady state photocarrier grating technique
`to measure diffusion lengths”
`Commenton “Rectification in heavily doped p-type GaAs/AIAs
`heterojunctions” [J. Appl. Phys. 70, 1081 (1991)]
`
`ERRATA.
`5730
`
`Erratum: “Magnetic properties of high-density Mn-Znferrites” [J. Appl.
`Phys. 69, 5349 (1991)]
`Erratum: Subdomain zincferrite particles: Synthesis and characterization
`[J. Appl. Phys. 67, 5509 (1990)]
`CUMULATIVE AUTHOR INDEX
`
`5731
`
`5732
`
`F. Demichelis, C. F. Pirri, E.
`Tresso, T. Stapinski
`M. Niwano, Y. Takeda, Y.
`Ishibashi, K. Kurita, N. Miyamoto
`L. M. Di, H. Bakker
`
`Shojiro Komatsu, Mitsuo
`Kasamatsu, Kawakatsu Yamada,
`Yusuke Moriyoshi
`F, Finger, U. Kroll, V. Viret, A.
`Shah, W. Beyer, X. -M. Tang, J.
`Weber, A. Howling, Ch. Hollenstein
`David L. Pappas, Katherine L.
`Saenger, John Bruley, William
`Krakow, Jerome J. Cuomo, Tieer
`Gu, Robert W. Collins
`P. K. Choudhury, P. Khastgir, S. P.
`Ojha, L. K. Singh
`H. Igarashi, T. Honma
`
`V. Amarger, C. Dubon-Chevallier,
`Y. Gao, B. Descouts
`N. Baber, H. Scheffler, H. Ullrich,
`T. Wolf, D. Bimberg
`
`K. Pressel, G. Bohnert, G. Rickert,
`A. Dérnen, K. Thonke
`Zoran Djurié, Zoran Jak&ié,
`Aleksandar Vujanié, J. Piotrowski
`T. M. Mooney, E. E. Alp, W. B. Yun
`
`V. Rousseau, S. Pasquiers, C.
`Boisse-Laporte, G. Calléde, P.
`Leprince, J. Marec, V. Puech
`B. L. Weiss,I. V. Bradley, N. J.
`Whitehead, J: S. Roberts
`S. B. Ogale, Rashmi Nawathey-
`Dikshit, S. J. Dikshit, S. M.
`Kanetkar
`
`Chun P. Lee, Taylor G. Wang
`
`J. J. Chang, T. D. Mantei
`
`S. Prabhu, K. L. Narasimhan,D.K.
`Sharma
`
`K. Weiser
`
`E. Zeeb, K. J. Ebeling
`
`T. Pannaparayil, R. Marande, S.
`Komarneni
`T. Pannaparayil, S. Komarneni,R.
`Marande, M. Zadarko
`
`iv
`
`Page 7 of 19
`
`Page 7 of 19
`
`

`

`Tantalum asa diffusion barrier between copperandsilicon: Failure
`mechanism andeffect of nitrogen additions
`Karen Holloway, Peter M. Fryer, Cyril Cabral, Jr., J. M. E. Harper, P. J. Bailey,
`and K. H. Kelleher
`IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598
`(Received 30 September 1991; accepted for publication 12 February 1992)
`The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta,N, and a
`nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these
`materials as diffusion barriers to copper. Intermixing in these films was followed as a function of
`annealing temperature by in situ resistance measurements, Rutherford backscattering spectra,
`scanning electron microscopy, and cross-section transmission electron microscopy. Ta prevents
`Cu-silicon interaction up to 550°C for 30 min in flowing purified He. At higher temperatures,
`copper penetration results in the formation of 7”-Cu,Si precipitates at the Ta-Si interface. Local
`defect sites appear on the surface of the sample in the early stages of this reaction. The Ta
`subsequently reacts with the substrate at 650°C to form a planar hexagonal-TaSi, layer. Ta
`silicide formation, which does not occur until 700°C in a Ta-Si binary reaction couple,
`is
`accelerated by the presence of Cu. Nitrogen-alloyed Ta is a very similar diffusion barrier to Ta.
`It was found that Ta,N is a more effective barrier to copper penetration, preventing Cu reaction
`with the substrate for temperatures up to at least 650°C for 30 min. In this case, local Cu-Si
`reaction occurs along with the formation of a uniform Ta;Si,; layer at the Ta,N-Siinterface.
`
`-
`
`I. INTRODUCTION
`
`Interest in copper for conduction lines and contact
`structures in very large-scale integrated (VLSI) circuits is
`widening since it is one of the most conductive metals
`available. Unfortunately, Cu is quite mobile in Si at ele-
`vated temperatures,! and its presence in Si creates trap
`levels that are deleterious to device operation.” For this
`reason, it is necessary to determine which materials may
`act as an effective diffusion barrier for Cu migration. A
`consideration for the choice of a diffusion barrieris thatit
`be metallurgically stable with respect to the metal that
`carriers the current.** This is an easy condition to meet for
`copper, since many refractory metals do not form Cu com-
`pounds. However, copper may penetrate through a metal
`layer without reacting with it. Therefore, the design of a
`diffusion barrier to copper poses different problems than
`those presented with aluminum, which is the most com-
`monly used conductor material. Aluminum is highly reac-
`tive and usually induces failure by consuming the barrier
`layer, forming aluminides.>~’ The presence of oxygen as an
`impurity in the barrier can retard this reaction since a thin
`(<10 nm) layer of Al,O; formsin contact with Al,° which
`prevents further interdiffusion. No such mechanism would
`be expected for copper, whichis relatively unreactive.
`Tantalum is a refractory metal that does not react with
`copper, so a Cu-Ta contact should be stable to high tem-
`peratures. An investigation by Hu et al. detected no diffu-
`sion of Cu through Ta deposited onto oxidized Si sub-
`strates up to 750°C.® The diffusion constant of Cu in Ta
`has been measured by a recent radiotracer study.” Cu mo-
`tion is quite slow in the temperature range thatis of use in
`microelectronic processing applications—Dp = 9X 10~*
`cm?/s; E, = 2.3 eV at 400-700°C. A recent report of the
`thermal stability of an evaporated Cu/Ta/TiSi,/Si thin-
`
`film structure, however, suggests failure by Cu penetration
`at about 300 °C.!° However, the presence of oxygen during
`the thermal treatments may haveaffected this result.!!
`Wehavepreviously reported that a 50 nm sputtered Ta
`film prevented the interaction of Cu and Si during 30 min
`anneals at temperatures up to 600 °C.!” At higher temper-
`atures, a complex reaction occurs that involves the motion
`of all three elements. Cu permeated the Ta film to form
`7” -Cu3Si precipitates at the Ta-Si interface, and the Ta
`reacted with the Si substrate to form a planar layer of
`hexagonal-TaSi,. Upon exposure to room air after the an-
`neal, amorphoussilicon oxide formed around the copper
`silicide precipitates. The latter reaction is probably cata-
`lyzed by the presence of Cu,Si at the SiO,-Si interface.
`The present investigation extends this work to determine
`the sequence and morphology of this interaction.
`The barrier properties of Ta might be further improved
`by the addition of impurities to the film. If the solubility
`limit is exceeded, solute atoms in a Ta grain would be
`expected to segregate to the grain boundaries, obstructing
`these fast pathways for copper diffusion. For this reason,
`we have incorporated nitrogen into the tantalum film by
`adding N, to the Ar gas during sputter deposition. If the
`N, concentration is sufficiently high, a tantalum nitride
`compound, Ta,N is deposited. The nitrides of tantalum
`have high melting points and belong to the class of rela-
`tively dense interstitial compounds,'* thus they may pro-
`vide even greater stability and lower reactivity than ele-
`mental Ta. Ta,N as a barrier between Al, and Pd and Co
`silicides has been previously investigated.'> There is also a
`report of TaN as a diffusion barrier between Al,Ta and
`silicon.!© However, the resistance of tantalum nitrides to
`Cu penetration has yet to be demonstrated.
`In order to investigate the structure and effectiveness
`of these materials as barriers against Cu diffusion, thin
`
`5433
`
`J. Appl. Phys. 71 (11), 1 June 1992
`
`0021