`
`FILE HISTORY
`US 6,538,324
`
`6,538,324
`PATENT:
`INVENTORS: Tagami, Masayoshi
`Hayashi, Yoshihiro
`
`TITLE:
`
`Multi-layered wiring layer and method of
`fabricating the same
`
`APPLICATION
`NO:
`FILED:
`ISSUED:
`
`US2000596415A
`
`19 JUN 2000
`25 MAR 2003
`
`COMPILED:
`
`22 MAY 2015
`
`TSMC Exhibit 1002
`
`Page 1 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
` 5
`
`TETa
`ep
`Cama En Ee Tg
`
`
`
`
`“4 ART UNIT ~
`EXAMINER
`
`[APPLICATION NO.|CONT/PRIOR| CLASS SUBCLASS
`
`[cer|Ad :ae . Vw
`
`
`
`
`
`
`
`097596415 |:
`|
`257
`7S]
`{|
`
`
`
`
`
`
`
`
`
`
`
`APPLICANTS
`
`TITLEi { I
`
`
`
`wo
`a\2
`Shoal
`ayeor
`<
`o1o
`eiw
`O18
`”
`
`
`
`-
`
`:
`-
`hee
`
`coe
`
`
`
`
`
`
`
`
`
`
`
`
`“aoa
`
`-
`
`U.S. UTIL
`oT,
`
`
`
`[patent NUMBER
`
`Ree,
`i
`ye
`
`|| 68
`i
`fi—_—
`ae if
`SS
`
`
`
`
`
`
`6538324
`
`
`
`
`
`
`
`
`
`
`
`
`
` hey
`
`
`
`
`
`
`
`
`PTO-2040
`12/99
`
`_,
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`DISCLAIMER
`
`(date)
`
`
`Co The term ofthis patent
`
`
`
`
`
`
`“subsequentto
`:
`
`
`_has been disclaimed.
`
`
`
`{.] ‘Tne term of this patentshall
`
`
`
`
`
`
`“not extend beyondthe expiration date
`
`
`
`
`
`
`of U.S Patent. No.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Print Fig.
`
`
`
`
`
`
`
`
`
`
`
`
`
`at
`a
`
`
`
`fe
`2
`Date)
`
`
`
`
`
`
`
`
`
`_ NOY
`
`
`
`(Assistant Examiner) .-”
`
`a
`
`Oe
`TOM THOMAS
`
`SUPERVISORY PATENT EXAMINER
`
`
`
`TECHNOLOGY CENTER 2800
`
`
`
`
`
`
`| “TERMINAL
`
`ICATION CROSS REFERENCE(S)
`(Primary Examiner) Theinformation disclosed herein mayberestricted. ‘Unauthorized disclosure may be prohibited by the United States Code Title 35, Sections 122, 181 and 368.
`
`monthsof
`C) Theterminal
`
`
`
`this patent have been disclaimed.
`
`
`
`
`
`
`-
`
`WARNING:
`
`.
`
`
`
`
`
`
`
`
`
`
`
`
`
`=|
`
`
`
`__eISSUE FEE
`
`moan Dus
`Dale Pai
`
`
`
`o-
`119-16-0
`
`
`
`
`
`
`
`axe
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`‘
`‘
`} Possession outside the U.S. Patent & Trademark Office is restricted to authorized employees and contractors only.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`FILEDwith: [_] Disk (CRF)
`[_]FICHE [-] cp-rom
`Form PTO-436A
`(Rev. 6/99)
`
`
`
`
`
`
`(Attached In pocket on right inside flap)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 2 of 333
`
`
`
`
`
`
`
`
`
`Page 2 of 333
`
`

`

`6,538,324
`
`MULTI-LAYERED WIRING LAYER AND METHOD OF FABRICATING THE SAME
`
`
`
`
`
`
`
`
`
`Transaction History
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Transaction Description
`
`
`
`
`
`Information Disclosure Statement(IDS) Filed
`6/19/2000|
`
`
`
`
`
`6/19/2000|Information Disclosure Statement(IDS) Filed
`
`
`
`
`
`
`Request for Foreign Priority (Priority Papers May
`
`
`
`
`
`
`
`6/19/2000| Be Included)
`.
`
`
`
`
`
`6/19/2000| Initial Exam Team nn
`
`
`
`
`
`7/10/2000|IFW Scan & PACR AutoSecurity Review
`
`
`
`
`
`
`
`8/16/2000| Application Dispatched from OIPE
`
`
`
`
`
`8/16/2000|Correspondence Address Change
`
`
`
`9/13/2000|Case Docketed to Examiner in GAU
`
`
`
`
`
`
`Case Docketed to Examiner inGAU _
`
`
`
`
`
`
`6/4/2001| Restriction/Election Requirement
`_
`
`
`6/5/2001|Mail Restriction Requirement
`
`
`
`7/9/2001|Responseto Election / Restriction Filed
`
`
`
`
`
`7/14/2001|Date Forwarded to Examiner
`
`
`
`
`9/24/2001|Non-Final Rejection
`
`
`9/25/2001|Mail Non-Final Rejection
`
`
`
`
`
`1/28/2002|Response after Non-Final Action
`
`
`
`
`
`
`
`
`
`Date Forwarded to Examiner
`
`
`
`
`
`4/3/2002|Final Rejection
`
`
`
`
`4/4/2002|Mail Final Rejection (PTOL - 326)
`
`
`
`
`
`
`
`6/11/2002 Amendmentafter Final Rejection
`
`
`
`
`
`
`6/25/2002
`
`
`
`
`
`7/1/2002
`
`
`
`
`
`
`7/2/2002
`
`
`
`
`
`
`8/9/2002
`
`
`
`8/9/2002
`
`
`
`8/20/2002
`
`
`
`8/20/2002
`
`
`
`8/20/2002
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 3 of 333
`
`Page 3 of 333
`
`

`

`
`
`
`9/9/2002|Notice of Allowance Data Verification Completed
`
`
`
`
`
`9/9/2002|Case Docketed to Examiner in GAU
`
`
`
`
`
`
`9/10/2002|Mail Notice of Allowance .
`
`
`
`
`
`9/13/2002|Information Disclosure Statement (IDS) Filed
`
`
`
`
`9/13/2002|Information Disclosure Statement (IDS) Filed
`
`
`
`
`
`
`Workflow - Informational Disclosure Statement-
`
`
`
`
`9/13/2002
`Finish
`
`
`
`Workflow - Informational Disclosure Statement-
`
`
`
`
`
`
`
`Begin —
`9/13/2002
`
`
`
`
`9/15/2002|Dispatch to Publications
`
`
`
`9/17/2002|Receipt into Pubs
`
`
`9/18/2002|Workflow - File Sent to Contractor
`
`
`
`
`10/11/2002
`”
`Receipt into Pubs
`
`
`11/20/2002|Mail Miscellaneous Communication to Applicant
`
`
`
`
`Miscellaneous Communication to Applicant - No
`
`
`
`
`11/20/2002|Action Count
`
`11/21/2002|Receipt into Pubs
`
`
`12/16/2002|Issue Fee PaymentVerified
`
`
`
`12/16/2002|Workflow - Drawings Finished
`
`
`Workflow - Drawings Matched withFile at
`
`
`
`
`
`
`12/16/2002|Contractor |
`12/16/2002|Workflow - Drawings Received at Contractor
`
`
`
`
`12/16/2002|Workflow - Drawings Sent to Contractor
`
`
`
`
`Issue Fee Payment Received
`12/16/2002|
`.
`
`
`
`
`
`
`
`
`1/2/2003|Receipt into Pubs
`
`
`1/14/2003|Request for Refund
`
`
`Workflow - Drawings Finished
`
`
`| Workflow - Drawings MatchedwithFile at
`
`
`
`
`
`1/21/2003|Contractor
`1/27/2003|Receipt into Pubs
`
`
`3/6/2003|Issue Notification Mailed
`
`
`3/25/2003|Recordation of Patent Grant Mailed
`
`
`
`
`3/25/2003| Patent Issue Date Used in PTA Calculation
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 4 of 333
`
`Page 4 of 333
`
`

`

`
`
`
`
`
`
`
`
`iHt
`
`
`
`
`
` .
`INITIALS.
`7- anal
`TENT APPLICATION.cheyesa) 4
`
`
`
`
`.Date“contents
`i
`. DateReceived oy
`09596415 TUN @ 8SONOea 2Pei ee
`
`
`
`
`
`
`
`(Incl. C. of M.)
`
`
`
`or.
`Date Mailed .
`
`
`;
`
`CO
`
`-
`
`42..
`G-ATR 43.
`
`
`G-l1G-%
`44.
`
`ola/x7aGt
`45.46.
`THER525Ohwi
`
`
`
`Ay
`
`“Y-GR5 |
`
`“54
`|
`
`3
`
`'
`
`
`(Incl. C. of M.)
`
`
`
`or.
`' Date Mailed
`
`
`,
`
`-
`
`ny
`a
`
`7
`
`;
`
`.
`
`plication [8shects papers.
`
`
`
`
`cL.
`Ziokt
`
`
`
`
`
`
`
`
`
`
`
`alan6.
`
`GrY-O7 |
`
`53,
`
`
`
`
`
`
`
`56.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`|
`
`22
`
`23
`24
`
`25
`26
`27
`28.
`
`
`29.
`
`30.
`31
`
`32
`
`33.
`
`34. _
`
`35.
`36.
`37
`
`38
`
`. 57.
`
`58.
`
`59.
`
`60.
`
`_.
`
`61.
`62.
`63.
`
`64.
`65.
`
`66.
`67.
`68
`69
`
`70
`
`71
`72.
`
`73.
`
`74.
`
`75.
`
`76.
`77.
`78.
`
`79.
`
`80
`| 39.
`81
`40.
`aa ‘9p.
`|
`(LEFT OUTSIDE).
`
`
`Page 5 of 333
`
`
`
`‘
`
`-
`
`a
`oo
`
`a
`ee
`
`:
`
`_
`_
`
`|
`
`;
`
`
`
`
`
`Page 5 of 333
`
`

`

`ISSUE SLIP STAPLE AREA(for additional cross references) ~
`
`
`
`
`
`
`
`
`
`
`POSITION INITIALS|—IDNO.|
`
`
`
`
`“FEE DETERMINATION 7
`
`
`eeee,ae
`
`
`
`
`
`O.1.P.E. CLASSIFIER
`
`
`FORMALITY REVIEW
`
`RESPONSE FORMALITYREVIEW|_—.—Ssd|SS
`
`
`
`
`;
`
`.
`
`INDEX OF CLAIMS
`
`
`A rcccccereeceeeeeeeeentereaeacas Rejected
`NO ee cecccceeseeeeeeeeeneneees Non-elected
`
`
`FS
`easeensesesestnestertetsnetsees Allowed
`Do
`cceceeeueseseseseeseseeeeeees interference
`
`
`— (Through numeral)... Canceled
`A eccceeteee Leese Appeal
`
`
`eccecceseeseteeseseenenseetsees Restricted
`Mo
`Occseneaseseetseiaeeeees Objected
`
`
`
`
`
`Date’
`
`Claim
`
`g
`a| Sal S8
`
`[cam]ate
`
`o
`al
`
`List
`1 G@vivieli TTPT
`
`
`NY
`PTtT fe!
`ae
`PETE)
`Cysttt
`alatitivielTTTTT| Lisaft
`
`ckesttiveltTTttL Iss
`“METt |[56]|
`
`7fviet|ttt 87
`
`rie tttitetfytT|[se]
`
`
`
`
`sess||
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
` so] |PPTTTTTi |fof|PTi
`
`
`
`
`
`
`
`
`
`g pee |_|la|10) Ptttt
`
`
`i, ittt | a|mci[||Pttt
`HH LTTttto
`PUTTTEPTtT
`RITTPLes)
`|_|
`PBTTTtt es]||[|
`
`CptTtyytt
`BETTETTTTtty ea]||
`
`HE eo]||tt
`
`Sin ol|TTtt
`
`an|[| zit|
`|[2b]|PtTET Lie
`|TT|||| SH}ft
`YetTT tttetty741[|
`~ Lf istPTtTTTPty.
`
`
`
`EBTTTT|tt
`
`eTTf a—
`EBTTT
`‘ a BH |
`ACOTTTTTTTtyte
`80]
`ReEEETP)LCfe
`eTTy
`[ea]|
`eS|fa |_[83]
`at PPTTT] LiePttfTTtT
`
`
`
`eTPETttt es)|Tt
`
`PefolaeTETTT) feet
`
`
`‘la [57]|[of=|||tt [leitTTTt
`
`
`
`
`reset|tole]|Tt| stTt
`
`39HH etttt
`aol |TtTt
`||90]|
`aTPtttTyer) Litett
`2;|tttTtttt lz}|tTPt
`atTTTETTtery {festtt
`Littt
`Pttt ofTTTTT
`sy|TdTdTrEET]hLpt t
`
`“fastTTT (fest|TTtt
`CytETET etttt
`48
`Litttttt js}|TT
`Tt
`ar|TETrTEET6 feytt
`tt
`
`
`
`
`
`
`
`
`Page 6 of 333
`
`_
`
`If more than 150 claims or 10 actions
`
`
`
`
`
`
`
`staple additional sheet here
`
`
`
`
`(LEFT INSIDE)
`
`
`-
`
`Page 6 of 333
`
`

`

`|4
`
`
`
`
`
`- SEARCHNOTES —|
`
`(INCLUDING SEARCH STRATEGY)
`
`
`
`
`
`I
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`2st
`
`o4/0e/02 in
`
`oy
`
`'.
`
`(RIGHT OUTSIDE)
`
`
`
`
`
`
`
`
`
`
`Page 7 of 333
`
`ror
`
`
`
`aeIe
`
`Page 7 of 333
`
`

`

`a
`
`Search Text
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`|(amorphous and crystals).“with‘nitride
`
`
`
`
`‘( (amorphous and crystal$5) with
`nitride) and (barrier or barriers)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`(257/751, 752,753,753, 762,773)
`
`(438/626, 627, 628, 643, 644, 645)).
`
`
`
`
`
`
`|
`(amorphous and crystal$5) and
`
`
`
`( (257/751, 752, 753,753, 762,773) or
`
`
`
`438/626, 627, 628, 643, 644, 645)).CCLS.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`09/03/2002, EAST Version: 1.03.0002
`
`
`
`
`Page 8 of 333
`
`Page 8 of 333
`
`

`

`
`
`
`Error
`. Time Stamp
`,
`
`
`Definition }
`2002/08/31 13:15.
`ok
`
`USPAT 2002/08/31
`
`[2002/08/31
`|}
`2002/08/31
`
` MTDR(2002/08/31
`
`
`
`
`jpas
`[2002/09/03 07:36
`
`
`Comments
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`. |
`
`
`
`
`
`
`USPAT
`
`
`
`
`a
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`co _
`
`|
`
`
`13:
`
`13:
`
`
`
`
`
`
`
`
`
`
`
`Page 9 of 333
`
`09/03/2002, EAST Version: 1.03.0002
`
`
`
`
`Page 9 of 333
`
`

`

`.
`
`\ FILE ‘INPADOC, HCAPLUS, WPIX,Jnr’ ENTERED AT 13:00:21 ON 06 SEP 2002.
`
`
`
`
`
`
`
`
`
`
`
`JP99-0214110/PRN,AP
`“L141
`4 S$
`
`
`
`SET SMARTSELECT ON
`
`
`L2
`SEL PLU=ON L11-ICMCRN:
`
`
`
`
`
`
`
`
`492715 S L2
`L3
`
`
`
`L4
`4S LI ANDL3
`
`
`
`
`
`12 TERMS
`
`~ 09/596,415 9/6/02
`
`
`FILE 'REGISTRY’ ENTEREDAT 13:11:56 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`LS
`4730 S NTWVELF ORN TA/ELF OR N WIELF ORN NB/ELF OR MO N/ELF OR N ZR/ELF OR HF N/ELF OR ALN/ELF ORN
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`VIELF OR CR N/ELF
`
`
`
`945 S N.TIMF OR N.TA/MF OR N.W/MF OR N.NB/MF OR MO.N/MF OR N.ZR/MF OR HF.N/MF OR AL.N/MF ORN:VIMF.
`L6
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`OR CR.N/MEF
`
`FILE 'CAPLUS' ENTERED AT 13:16:22 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`1265 S
`(L5ORL6)(L)CRYSTHHHHHHHHHHH
`L7
`L8 274 S
`(LS ORL6)(LMNONCRYSTH#H##HHHH OR NON CRYSTHHMHHHHH OR AMORPHOUS)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`51227 S
`(L5ORL6)
`L9
`L10
`17596 S$ METAL##HHHHHH(41,4)(NITROGEN OR NITRIDAHH## OR “N")
`
`
`
`
`
`
`
`
`
`
`(CONC OR CONCNOR CONCENTRATION OR PPM OR WT OR PERCENT OR RATIO OR
`82137 S
`L411.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`ATOMIC)(2A)(NITROGENOR NITRIDI#¥4##° OR "N")
`
`
`
`(L9ORL10)
`L12
`65189 S
`
`
`
`2417 S L12ANDL11
`L13.
`
`
`
`
`
`
`
`429 S L12 ANDL14
`L15
`
`
`
`
`
`L146
`18153 S
`(AMOUNT)(2A)(NITROGEN OR NITRID#HHHHY OR “N")
`
`
`
`
`
`
`
`L17
`20847 S L13ORL15ORL16
`
`
`
`
`
`
`
`L18
`32 S L7ANDL8
`
`
`
`S$ 7440-50-8/REGH
`
`
`(SMALLER ORLARGER OR MORE OR LESSOR¢ RELATIVEHH2AYNITROGEN OR NITRIDAHHHH OR "N")
`
`
`
`
`
`
`
`
`
`
`
`L14
`
`26597 S_
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`FILE 'REGISTRY’ ENTERED AT 13:23:51 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`7440-50-8/RN
`L19
`1. S
`
`
`
`FILE ‘CAPLUS' ENTERED AT 13:23:51 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`364227 S§ L19
`L20
`
`
`
`601448 S DIFFUSION OR BARRIER
`21
`
`
`
`
`
`2910 S L17 AND (FILM OR LAYER### OR MULTILAYER###
`(£22
`
`
`
`
`
`
`
`
`
`#t)
`689 S L17ANDL21
`L23.
`
`
`
`.
`343 S L22ANDL23
`124
`
`
`
`L25 86 S L24 AND (SECOND OR TOP OR BOTTOM OR UNDER
`
`
`
`
`
`
`
`
`
`
`
`OR OVER)
`
`93 S (L7ORL8)ANDL17
`
`
`
`
`
`3 S L20ANDL26
`
`
`
`8 S L21ANDL26
`
`
`
`
`49 § L22ANDL26
`
`
`
`
`9 S
`(L270RL28)
`
`
`S (NITROGENICN OR N/MF)(I.)CONCENTRATION
`
`
`
`FILE ‘REGISTRY’ ENTEREDAT 13:31:01 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`40 S N/IMF
`L31
`
`
`
`FILE ‘CAPLUS' ENTERED AT 13:31:02 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`28692 S L31
`L32
`
`
`
`
`L126
`
`27°
`
`L28
`
`29
`
`L30
`
`
`FILE "REGISTRY ENTERED AT 13:31:03 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`1 S NITROGEN/CN
`L33
`
`
`
`FILE ‘CAPLUS' ENTERED AT 13:31:03 ON 06 SEP 2002
`
`
`
`
`
`
`
`
`199098 S L33
`L34
`
`
`2397 S
`(L34ORL32 )(LYCONCENTRATION
`L356
`
`
`
`
`
`0 S
`(L7ORL8)ANDL35—
`L36
`
`
`
`
`45 S L12 ANDL35 .
`L37
`
`
`
`
`L38
`8 S L37 AND (SECOND OR TOP OR BOTTOM OR UNDER OR OVER)
`
`
`
`
`
`
`
`
`
`
`
`
`
`L39
`9.S L37 AND (FILM OR LAYER### OR MULTILAYER###HHH),
`
`
`
`
`
`
`
`
`
`L40
`3 S L37 AND (L20 OR L21)
`
`
`
`L41
`17 S$
`(L38ORL39 OR L40) NOT L30
`
`
`
`
`
`
`
`
`
`L42
`17231 S L20ANDL21
`
`
`
`
`
`L43
`1108 S LI ANDL42
`
`
`
`
`:
`
`Page 10 of 333
`
`Page 10 of 333
`
`

`

`
`
`2
`
`L44
`
`‘145
`
`‘L46
`
`L47
`
`L48
`
`L49
`
`L50
`
`L541
`
`L52
`
`L53
`
`L54
`
`L55
`
`L56
`
`L57
`
`L58
`
`L59
`
`. L60
`
`L641
`
`L62:
`
`L63
`
`L64
`
`L65
`
`L66
`
`-L67
`
`L68
`
`L69
`
`L70
`
`L714
`
`L72
`
`L73
`
`L74
`
`L75
`
`_L76
`
`L77
`
`L78
`
`L79
`
`L80
`
`84
`
`L82
`
`L83
`
`L84
`
`L85
`
`L86
`
`L87
`
`L88
`
`L89
`
`L90
`
`L91
`
`L92
`
`L93
`
`L94 ©
`
`L95
`
`“L96
`
`L97
`
`L98
`
`L99
`
`
`18 S (L7ORL8) ANDL43
`46 S L44NOT((L38 OR Lay'OR L40) OR 30)
`
`
`
`
`
`
`
`
`
`
`
`
`
`125 S
`(L18ORL29 ORL37)
`99 S L46 NOT (L44 OR (L38 ORL39 OR L40) OR 30)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`90744 S (SECOND ORTOP OR BOTTOM OR UNDER OR OVER)(3AXFILM OR LAYER###H#)
`
`
`
`
`
`
`
`
`
`
`
`
`5 S L47ANDL48 ©
`“4.
`421888 S
`(L18ORL35ORL16 OR Li4 OR Ln
`
`
`
`
`
`
`
`99 S L47ANDLS50
`
`
`
`
`L514 AND(L7 ORL8)
`71
`S$
`
`
`
`
`
`30 S L51 ANDL7 ANDL8
`
`
`
`
`
`
`0 S (L541 AND (HO1L021-28 OR H01L021-3205 OR H04 L021-768)/1C) NOT L53
`
`
`
`
`
`
`
`
`
`
`124 S
`(L7ORL8) ANDLS50
`OR130)
`L563 ORL49 OR(L44 OR(L38 OR L39 ORL40)
`75 S
`
`
`
`
`
`
`
`
`
`
`
`
`
`80 S L55 NOTLS56
`0 S L57 AND (SECOND ORTOP OR BOTTOM)(2A)(FILM_ OR LAYER).
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`38 S_L57 AND (FILM OR LAYERM#HH)
`
`
`
`
`
`
`0 S_ L35 AND(L7 ORL8)
`
`
`31.S L35 AND (L5 OR L6)
`0 S$
`L614 AND (NONCRYST?.OR NON CRYST#HH#HHHHH OR AMORPHOUS)
`
`
`
`
`
`
`
`
`
`
`
`
`
`5 S L61 AND CRYSTHHHHINEHHHHH
`
`
`
`
`31764 S|
`(NITROGEN OR "N")(2A)(FILM OR LAYERM#HHH
`
`
`
`
`
`
`79 S (L7ORL8) AND L64
`
`
`
`
`
`
`6 S L48 ANDL65
`
`
`
`
`
`
`
`2315 S L50 ANDL67
`
`
`
`43 S (L5ORL6) ANDL68
`
`
`49 S L59ORL66ORL63
`
`
`
`
`
`
`124 S L70 OR L53 OR L49 OR(L44 OR (L38ORL39 OR L40) ORL30)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`41 S L6QNOTL71°
`-
`
`
`
`
`S L48 ANDL72
`1
`
`
`
`
`40S L72NOTL73
`
`
`30750 S DOUBLE(2W)LAYERA#
`
`
`291
`S$ L12 ANDL75
`
`
`40 S L76 AND AMORPHOUS(1 A)(FILM OR LAYER###)
`
`
`
`
`
`
`
`
`6 S_ L76 AND CRYST##HHHYHY(1A)(FILM OR LAYER###)
`
`
`
`
`
`
`0 S_L76 AND NONCRYSTi######H#(1A)(FILMOR LAYER###)
`
`
`
`
`
`
`16 S (L77ORL78)
`
`
`9 S NITRIDE NITRIDE(W)(MULTILAYER OR LAYER OR’ FILMORMULTIPLE)
`
`
`
`
`
`
`
`
`
`SEL PLU=ON L811-RN:
`69 TERMS
`
`
`
`
`
`
`2457130 S L82
`
`
`9 S L81 ANDL83
`,
`
`
`
`
`0 S CRYSTAL#HHHH AMORPHOUS DOUBLE LAYER
`
`
`
`
`
`OS CRYSTAL#HH##HHHH(3A)AMORPHOUS DOUBLE(2W)LAYER
`
`
`
`72 S CRYSTAL##H##HHHE(3A)AMORPHOUS ANDDOUBLE(2W)LAYER
`
`
`
`
`4 S Li2ANDL87
`—"
`
`
`
`266 S (TAGAMIMASAYOSHI OR HAYASHI YOSHIHIRO)IIN,AU
`
`
`
`
`
`
`81642 S
`(TWOOR DUAL OR DOUBLE ¢OR BIXW)LAYEROR. BILAYER?
`
`
`
`
`
`
`
`
`
`1 S L89 ANDL9O
`:
`
`
`
`
`686 S L12 ANDL90°
`43 S (AMORPHOUS OR NONCRYST? OR NON CRYST?)
`AAND L92
`
`
`
`
`
`
`
`
`19 S L93 AND CRYST?
`
`
`SEL PLU=ON L941-RN:
`
`
`
`
`
`1859308 S L95,
`-
`
`19 S L94 ANDL96
`
`
`
`1S DOUBLE NITRIDE LAYER
`
`
`
`
`4 8 TWONITRIDE LAYERS
`
`
`
`
`
`
`
`12725 S
`
`(NITROGEN OR *N")(2A)DIFFERENT oO
`
`
`
`,
`
`,
`
`
`
`
`
`
`
`
`
`
`67 TERMS ©
`
`
`Page 11 of 333
`
`Page 11 of 333
`
`

`

`i
`
`
`
`
`
`
`+
`j
`jand barrier$1
`
`
`
`
`
`
`
`
`
`i
`
`
`
`.
`
`
`
`‘
`
`
`
`
`
`
`
`
`
`Search Text
`
`|
`( (amorphous: -and crystal$5)
`|
`
`
`with nitride) and barrier$1li~
`
`
`
`
`
`
`
`
`( (amorphous and crystal$5) Spo, 2002/03/26
`|
`with nitride) and barrier$1pegwen17: 03
`
`
`
`
`
`
`
`
`
`
`
`‘EPO;
`
`
`
`
`
`
`
`
`;
`( (amorphous and crystal$5) |
`|
`
`20021037126
`jp
`with (TiN or WN or TaN) )
`
`and barrier$l
`‘DERWEN
`
`
`i
`IBM
`iT;
`
`'TDB |
`lwith (TiN or WN or TaN))
`(USPAT 2002/03/36
`:
`|( (amorphous and crystal$5) j
`|
`
`03/26/2002, EAST Version: 1.02.0008
`
`
`
`Page 12 of 333
`
`Page 12 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`. Search Text
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`09/14/2001, EAST Version: 1.02.0008.
`
`
`
`
`Page 13 of 333
`
`Page 13 of 333
`
`

`

`1
`
`|: Error
`
`Definition
`
`|
`
`
`;
`(2001/09/11
`
` 2001/09/11 08:
`
` ‘Time Stamp ot
`
`
`
`.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`2001/09/11
`
`
`09:01)
`
`2001/09/11
`|
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`09/14/2001, BAST Version: 1.02.0008
`
`
`
`
`Page 14 of 333
`
`Page 14 of 333
`
`

`

`
`
`
`
`
`
`
`
`US006538324B1
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`«2) United States Patent
`
`
`
`Tagamietal.
`
`(10) Patent No:
`
`
`
`
`(45) Date of Patent:
`
`
`US 6,538,324 B1
`
`
`
`
`Mar.25, 2003
`
`°
`
`OTHER PUBLICATIONS
`
`.
`.
`
`
`
`
`
`
`Semiconductor World Nobuyoshi Awaya, Feb. 1998, pp.
`91-96.
`
`
`
`
`
`
`
`
`
`Kee—Won Kwonetal., “Characteristics of Ta As An Under-
`
`
`
`
`
`
`layer for Cu Interconnects”, Advanced Metallization and
`
`
`
`
`
`
`Interconnect Systems for ULSIApplications in 1997, 1998,
`
`pp. 711-716.
`:
`M. T- Wang,et al., “Barrier Properties of Very Thin Ta and
`
`
`
`
`
`
`
`
`
`
`TaN Layers Against Copper Diffusion”, Journal Electro-
`
`
`
`
`
`
`chemical Society, Jul. 1998, pp. 2538-2545.
`
`
`
`
`
`
`
`
`
`
`
`
`
`D. Denning,et al., An Inlaid CVD Cu Based Integration for
`
`
`
`
`
`
`
`
`
`
`Sub 0.25um Technology, 1998 Symposium on VLSI Tech-
`nology Digest of Technical Papers, 1998, pp. 22-23.
`
`
`
`
`
`
`
`.
`
`
`
`* cited by examiner
`
`_
`
`Primary Examiner—Tom Thomas
`
`
`
`Assistant Examiner—Hung Kim Vu
`
`
`(74) Attorney, Agent, or Firm—Scully, Scott, Murphy &
`
`
`
`
`
`
`
`Presser
`©7)
`ABSTRACT
`There is provided a barrier film preventing diffusion of
`
`
`
`
`
`
`
`
`
`
`copper from a copper wiring layer formed on a semicon-
`
`
`
`
`
`
`
`ductor substrate. The barrier film has a multi-layered struc-
`
`
`
`
`
`
`
`
`
`
`
`
`ture of first and second films wherein the first
`film is
`
`
`
`
`
`
`
`
`
`composed of crystalline metal containing nitrogen therein,
`
`
`
`and the secondfilm is composed of amorphous metalnitride.
`
`
`
`
`
`
`
`
`
`The barrier film is constituted of common metal atomic
`
`
`
`
`
`
`
`
`
`
`
`
`
`species. The barrier film prevents copper diffusion from a
`
`
`
`
`
`
`copper wiring layer into a semiconductor device, and has
`
`
`
`
`
`sufficient adhesion characteristic to both a copper film and
`
`
`
`
`
`
`
`
`an interlayer insulating film.
`
`
`
`
`
`
`
`
`10 Claims, 20 Drawing Sheets
`
`A
`
`N
`
`aW
`
`Z,ZZ
`
`(54) MULTI-LAYERED WIRING LAYER AND
`
`
`
`
`METHOD OF FABRICATING THE SAME
`
`
`
`
`
`(75)
`
`Inventors: Masayoshi Tagami, Tokyo (JP);
`
`
`
`
`Yoshihiro Hayashi, Tokyo (JP)
`
`
`
`
`(73) Assignee: NEC Corporation, Tokyo GP)
`
`
`
`
`
`
`(*) Notice:
`
`
`
`Subjectto any disclaimer, the term of this
`
`
`
`
`
`
`
`patent is extended or adjusted under 35.
`
`
`
`
`
`
`
`
`U.S.C. 154(b) by 0 days.
`
`
`
`.
`
`.
`
`(21) Appl. No.: 09/596,415
`
`
`
`(22)
`Filed:
`Jun.
`19, 2000
`:
`-19,
`
`
`
`
`
`
`
`(30)
`_ Foreign Application Priority Data
`(IP)
`esseseesscssesvecssesstssssassessasneecs 11-214110
`Jun. 24,1999
`
`
`
`
`
`4
`
`
`
`Int. C1? ee cseee HOLL 23/48; HO1L 23/52
`(51)
`
`
`
`
`
`
`
`(52) U.S. Ch. cic cecersnseeereeeeseens 257/751; 257/762
`
`
`
`
`
`
`
`
`(58) Field: of Search .........ceece eetecene 257/751, 752,
`257/153, 758, 762, 773; 438/626, 627,
`
`
`
`
`
`628, 643, 644, 645
`
`
`
`
`(56)
`
`i
`3p
`JP
`JP
`
`:
`:
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`
`5,668,411 A :
`9/1997 yore et al. nereeeaniee 257/751
`
`
`
`
`
`
`
`
`
`
`Vitkavage et al. s+... 438/626
`1/1999
`5,858,873 A
`
`
`
`FOREIGN PATENT DOCUMENTS
`
`
`Soaped
`1ey1996
`9.64044
`3/1997
`9-293690
`* 11/1997
`10-256256
`9/1998
`
`Page 15 of 333
`
`Page 15 of 333
`
`

`

`U.S. Patent —
`
`
`
`Mar. 25, 2003
`
`
`
`
`
`‘Sheet 1 of 20
`
`
`
`
`US 6,538,324 B1
`
`
`
`FIG. 1
`
`
`
`
`
`
`
`
`
`
`
`
`
`FIG. 2
`
`(Prior Art)
`
`_
`
`
`
`
`
`9
`Us SE3 |
`wee ae ae ot
`
`
`
`
`
`FIG.3
`
`(Prior Art)
`
`Page 16 of 333
`
`
`
`Page 16 of 333
`
`

`

` U.S. Patent
`
`Mar. 25,2003
`
`
`
`Sheet 20f20
`
`
`
`
` —«-US 6,538,324 B1
`
`
`
`a
`
`
`
`44
`
`is
`h
`
`)<|
`
`\Z
`
`5
`
`FIG. 4B
`
`
`Page 17 of 333
`
`;
`
`J)
`
` Y
`
`
`UDB
`
`
` 4
`
`
`Page 17 of 333
`
`

`

`U.S. Patent
`
`
`
`Mar. 25,2003
`
`
`
`
`
`Sheet 30f20
`
`
`
`
`
`
`
`=:
`
`US. 6,538,324 BL
`
`
`
`
`
`
`FIG. 4C
`
`
`FIG.4D
`
`
`
`
`Page 18 of 333
`
`Page 18 of 333
`
`

`

`
`
`
`U.S. Patent
`
`Mar. 25,2003
`
`
`
`Sheet 4 of 20
`
`
`
`
`US 6,538,324 B1
`
`
`
`(%)
`
`
`
`BOTTOMCOVERAGE
`
`
`
`Page 19 of 333
`
`1
`
`
`
`15
`
`
`2
`
`
`
`85
`25
`3
`
`
`_ ASPECT RATIO
`
`FIG. 6—
`
`
`4
`
`
`
`45
`
`
`5.
`
`Page 19 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 20 of 333
`
`

`

`
`U.S. Patent=Mar.25,2003 Sheet 6of 20 US 6,538,324 B1
`
`
`
`
`
`
`
`
`
`
`1000 _ 800
`
`£
`" ®
`Ga
`
`= 600
`q
`
`F
`
`13Pa, 2kW
`
`> 400
`_
`”)
`7)
`Ww
`m 200
`
`0.
`
`-
`
`,
` 13Pa, 8kW
`oo
`78
`
`
`
`
`
`
`
`10
`
`No/(Ar+N2) FLOWRATE. RATIO (%)
`
`
`FIG.9 -
`
`
`Page 21 of 333
`
`Page 21 of 333
`
`

`

`
`U.S. Patent — Mar. 25,2003—Sheet 7 of 20.
`US 6,538,324 B1
`
`
`
`
`
`
`
`
`
`15000
`
`|
`
`|) B-Ta(ooe)
`
`> 10000
`‘o
`Ce
`
`DB
`
`2&
`
`o.
`.
`£
`
`2&
`
` 20000 7
`
`
`
`5000
`
`0
`
`25
`
`|
`
`
`
`
`
`
`
`
`
`30
`
`35
`20 (deg.)
`
`
`
`
`40
`
`45
`
`
`
`i—
`
`~B-Ta(002)
`
`TaNo; (011)
`|
`
`5000
`
`4000
`
`3000
`
`2000 L
`
`4000
`
`0
`
`25
`
`30
`
`
`45
`
`40
`
`35
`
`20 (deg.)
`
`FIG. 4100
`
`
`Page 22 of 333
`
`Page 22 of 333
`
`

`

`U.S. Patent
`
`
`Mar. 25,2003
`
`
`
`Sheet 8 of 20
`
`
`
`
`US 6,538,324 B1
`
`
`
`
`
`1500
`
`1000
`
`500
`
`aa
`
`. 2 =
`
`wC
`
`c &E
`
`o
`
`*
`25
`
`pane J
`30
`35
`40
`
`45
`
`20 (deg.)
`
`
`
`
`:
`
`oo
`
`2000
`
`
`5000
`
`4000
`
`2 3000
`
`2000
`
`1000
`
`0
`
`2 > 2
`
`L=
`
`Page 23 of 333
`
`TayNe(113) or (041)
`-
`
`|
`
`|
`
`Ta3N.(132)
`».. or (042)
`
`25
`
`
`30
`
`45
`
`40
`
`
`35
`26 (deg.)
`
`
`FIG. 13
`
`Page 23 of 333
`
`

`

`250
`
`200
`
`150
`
`100
`
`50
`
`0
`
`0
`
`2000
`
`1500
`
`1000
`
`U.S. Patent
`
`
`5
`
`CG
`
`32
`
`2 %
`
`@
`o
`
`Oo
`c.
`
`2 a=
`
`c®=
`
`Page 24 of 333
`
` 300
`500.
`
`Mar. 25,2003
`
`
`
`Sheet 9of 20
`
`
`
`
`US 6,538,324 Bl
`
`
`
`|
`
`
`
`
`
`
`
`|
`
`CRYSTALLINE
`.. b- Ta.& TaNo4
`
`
`
`me oer oO
`
`
`
`,
`
`_
`2
`6.
`4
`
`
`
`RF Power(kW)
`
`
`
`
`8
`
`
`
`10
`
`
`
`
`
`20(deg.)_
`
`FIG. 15
`
`
`Page 24 of 333
`
`

`

`
`U.S. Patent
`
`Mar.25,2003
`
`
`
`Sheet 100f20 ° ~—- US 6,538,324 B1
`
`
`
`
`
`
`a&
`
`6000
`
`2zS2
`
`4000
`
`2000
`
`0
`
`25
`
`30
`
`
`35.
`
`
`
`40 45
`
`
`. 20 (deg.).
`
`
`
`- T
`
`aN,,(110)
`-
`
`- 20000
`
`15000
`
`10000 8000
`6-Ta(002) |
`
`@a Q
`
`S.
`= 10000|
`c.
`o.
`=
`
`”C
`
`5000
`
`
`
`
`
`
`20 (deg.)
`
`
`FIG. 17 |
`
`Page 25 of 333
`
`Page 25 of 333
`
`

`

`“Sheet 11 of 20.~—-«US 6,538,324 BI
`
`U.S. Patent.
`
`
`
`
`
`
`
`Mar.25, 2003
`
`~ 20000
`
`
`
`Intensity(cps)
`
`15000
`
`10000
`
`5000
`
`f-Ta
`
`TaNg
`
`25
`
`30 35 40 45
`
`
`26 (deg.) oe
`
`FIG. 18
`
`
`Page 26 of 333
`
`Page 26 of 333
`
`

`

`
`
`
`
`
`
`US. Patent
`
`
`Mar.25, 2003
`
`
`
`
`
`
`
`
`
`
`
`US 6,538,324 B1
`
`Sheet 12 of20.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 27 of 333
`
`Page 27 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
` U.S. Patent
`
`
`
`
`
`
`
`
`
`Page 28 of 333
`
`Page 28 of 333
`
`

`

`%
`
`a
`:
`7 0 aye
`
`.
`
`‘
`ay
`
`U.S. Patent
`
`
`
`
`
`Mar.25, 2003 Sheet 14of20 ees US 6,538,324 B1
`
`
`
`
`
`
`
`
`
`
`
`
`
`eR
`
`ae,
`
`is
`
`FIG. 21
`
`
`
`
`Page 29 of 333
`
`Page 29 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`
`
`
`
`U.S. Patent=Mar. 25,2003 = Sheet 15 of 20 ©——s«USS: 6,538,324 BI
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 30 of 333
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 30 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
` yt
`
`Son
`
`
`
`
`
`
`
`
`
`Page 31 of 333
`
`Page 31 of 333
`
`

`

`
`
`
`
`
`
`
`
`U.S. Patent
`
`
`Mar.25,2003
`
`
`
`Sheet17 of 20 ‘
`
`
`
`~
`
`_-US 6,538,324 B1
`
`
`
`fa7
`
`ys
`
` N
`
`A
`
`jy
`
`
`
`Ss
`
`
`
`
`
`
`
`
`
` GRRyp GLig
`
`WNYd “
`
`
`ZZ
`
`
`«Yn Wed.
` Z
`
`
`N
`
`AWA
`
`Y WN
`
`QO
`DLLLE?
`
`
`
`
`
`NS
`
`
`
`Page 32 of 333
`
`Page 32 of 333
`
`

`

`
`
`
`
`U.S. Patent
`
`
`~ Mar. 25,2003 Sheet 18 of 20
`
`
`
`
`
`
`US 6,538,324 B1
`
`
`
`48 |
`
`49
`
`
`
`45 -
`
`
`45
`
`FIG.27
`
`
`Page 33 of 333
`
`Page 33 of 333
`
`

`

`
`
`
`
`U.S. Patent
`
`
`Mar. 25,2003
`
`
`
`Sheet 19of 20
`
`
`
`
`US 6,538,324 B1
`
`
`
`(atoms/cm4)
`
`
`;
`‘ Barrier Film
`After Annealing ©
`6-Ta
`
`‘A
`
`t1’''I!tt''1! t4 ''tt
`
`
`
`FLUORINECONCENTRATION
`
`
`
`COPPERCONCENTRATION
`
`Page 34 of 333
`
`
`
`(atoms/cm3)
`
`Deposition |
`
`0
`
`4000
`
`500
`- DEPTH(A)
`
`FIG.28
`
`
`
`‘ Barrier Film> .
`
`aw yi
`After Annealing
`
`+
`
`
`
`
`Deposition
`TagN
`
`
`0
`
`500
`
`:
`
`1000
`
`DEPTH(A)
`
`
`FIG.29
`
`Page 34 of 333
`
`

`

` U.S. Patent
`
`
`
`Mar. 25,2003
`
`
`
`
`
`
`
`Sheet 20 of 20»
`
`
`
`
`
`US 6,538,324 B1
`
`
`
`
`
`
`
`
`\S
`
`S
`NN
`
`
`
`
`TAs
`
`RAY a
`a
`
`
`SSVI
`PS
`
`\aa
`
`FIG.30
`
`
`
`
`
`
`
`
`Page 35 of 333
`
`Page 35 of 333
`
`

`

`
`
`
`
`
`
`
`
`US 6,538,324 B1
`
`
`
`
`
`10°
`
`
`
`
`20
`
`
`30
`
`
`
`
`
`4s
`
`
`
`50
`
`
`55
`
`
`60
`
`
`
`
`
`
`
`
`1
`MULTI-LAYERED WIRING LAYER AND
`
`
`
`METHOD OF FABRICATING THE SAME
`
`
`
`
`
`2
`recess and a through-hole reaching the underlying copper
`
`
`
`
`
`
`
`wiring layer. Then,a thin diffusion-barrier film is formed on
`
`
`
`
`
`
`
`
`surfaces of the recess ‘and the through-hole therewith such
`
`
`
`
`
`
`
`
`that. the recess andthe through-hole is completely covered at
`
`
`
`
`
`
`
`
`
`BACKGROUND OF THE INVENTION
`surfaces thereof with the diffusion-barrier film in order to
`
`
`
`
`
`
`
`
`
`
`
`prevent copper diffusion from uncovered region.
`1. Field of the Invention
`
`
`
`
`
`
`
`
`
`Thereafter, a copperfilm is depositedfilling the recess and
`
`
`
`
`
`
`
`
`Theinventionrelates to a semiconductorintegrated circuit
`
`
`
`
`
`
`the through-hole therewith by CVD orsputtering. Then,the
`
`
`
`
`
`
`
`
`including a copper wiring layer, and more particularly to a
`
`
`
`
`
`
`
`
`
`copper film and the diffusion-barrier film are removed in
`
`
`
`
`
`
`
`
`barrier film which prevents copper diffusion from such a
`
`
`
`
`
`
`
`
`selected regions by CMP. Thus, a copper wiring layer is
`
`
`
`
`
`
`
`
`
`copper wiring layer.
`
`
`completed.
`2. Description of the Related Art
`As will be obviousto those skilled in the art, the diffusion-
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`As a semiconductor device has been designed io be
`barrier film is required to have high coverage as well as
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`smaller and smaller in size, wiring delay exerts greater
`capability of preventing copper diffusion and adhesion to
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`influence on a silicon ULSI device. As a result, though a
`copper.
`
`
`
`
`
`
`
`
`
`
`wiring layer has been composed of aluminum, itis necessary
`The diffusion-barrier film is composed, for instance, of
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`10 compose a wiring layer of copper in place of aluminum.
`refractive metal such as tungsten (W),
`tantalum (Ta) or
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Resistivity of copper is equal to about 70% of resistivity
`titanium (Ti), or nitride of such refractive metal such as
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`of aluminum. However, since copper does not form passive
`tungstennitride (WN), titanium nitride (TiN) or tantalum
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`state composedof an oxide film, at a surface thereof, unlike
`nitride (TaN).
`
`
`
`
`
`
`
`
`
`
`
`aluminum, copper is more corrosive than aluminum.
`As.explained in Prior Art 2, for instance, a tantalum (Ta)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`In addition, since copper has a high diffusion rate in both
`barrier film bas high adhesion with a copperfilm formed on
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`the tantalum barrier film by sputtering, ensuring improve-
`silicon (Si) and silicon dioxide (SiO,), if copper enters
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`ment:in crystallinity of the copper film. However, since
`MOSFETformed onasilicon substrate, copper would
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`25.
`induce reduction in carrier lifetime.
`copper is diffused into the tantalum film,
`it would be
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`necessary for the tantalum barrier film formed below the
`Hence,
`it is absolutely necessary for a semiconductor
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`copperfilm, to have a thickness of 50 nm or greater.
`device having a. copper wiring layer to have a diffusion-
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Prior Art 4 reports that if a copper film is. formed on a
`barrier
`film for preventing diffusion of copper into an
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`tantalum film by CVD, fluorine(F)se‘gregates at aninterface
`interlayer insulating film formed between copper wiring
`
`
`
`
`
`
`
`
`
`between the copper film and TaN,resulting in degradation in
`
`
`
`
`
`
`layers. In addition, since such a diffusion-barrier film has to
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`adhesion therebetween.
`have high adhesion characteristic to both an interlayer
`
`Prior Art 3 reportsthat a crystalline TaNbarrier film
`
`
`
`
`
`
`
`insulating film and a copper wiring layer in order to keep
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`oriented in directions of (200) and (111) can prevent copper
`reliability in wiring.
`
`
`
`
`
`
`
`
`
`
`
`diffusion mere highly than acrystalline Ta barrier Alm.
`Thus, there have been made many’ suggestions ‘about a
`
`
`
`
`
`
`
`
`35
`
`
`
`
`
`
`
`
`As an solution to enhance a characteristic of preventing
`structure of a barrier metal layer and a method offabricating
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`copper diffusion and adhesion to copper, a multi-layered
`
`
`
`the same, in order to prevent copper diffusion form a copper
`
`
`
`
`
`
`
`
`
`
`
`
`
`structure of a metal film and a metal nitride film has been
`
`
`
`
`
`
`
`
`
`
`
`wiring layer.
`
`suggested.
`For instance, a structure of a barrier metal
`layer 1S
`
`
`
`
`
`For instance, the above-mentioned Japanese Patent Appli-
`
`
`
`
`
`
`
`suggested iin the following articles: »
`40
`
`
`
`
`cation No. 10-330938 has suggested a method offabricating
`
`
`
`
`
`
`
`
`(a) Semiconductor World, Nobuyoshi Awaya, February |
`a multi-layered barrier film including. a titanium film and .
`
`
`
`
`
`
`
`
`
`
`
`
`
`1998, pp. 91-96 (hereinafter,referred to as PriorArt 1);
`
`formed by sputtering.
`
`
`
`
`
`
`
`
`
`
`Asillustratediin FIG. 1, in accordance with the suggested
`(b) Advanced Metallization and Interconnect Systemsfor
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`ULSI Applicaticns in 1997, Kee-Won Kwonet al.,
`into a sputter
`method, only an argon gas is. introduced:
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1998, pp. 711-716 (hereinafter, referred to Prior Art 2);
`chamber to thereby forma titanium film 1. Then, a nitrogen
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`thin
`gas is introduced into ‘the | sputter, chamber, and a
` (c) Journal Electrochemical Society, M.T. Wangetal.,
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`titanium nitride film 2 is formed on the titanium film 1
`July 1998, pp. 2538-2545 (hereinafter, referred to as
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`auxiliarily making use of reaction between titanium and
`Prior Art 3); and
`:
`
`
`
`
`
`
`
`
`
`
`nitrogen... Thus,
`there is formed-a multi-layered barrier
`(d) 1998: Symposium on ‘VLSI ‘Technology. Digest of
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`‘structure 3 comprised ofthe titanium film 1 and the thin
`. Technical Papers, D. Denning et al., 1998, pp. 22-23.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`titanium nitride film 2.
`In addition, a ‘structure of a barrier metal layer and a
`
`
`
`
`
`
`
`
`
`
`
`
`In the method, a metal oxide film formed on an underlying
`method of fabricating the same both for preventing copper
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`wiringfilmis removed by argon plasmaprior to-carrying out
`‘diffusion is suggested also in Japanese Unexamined Patent
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Publications 8-139092, 8-274098, 9-64044 and 10-256256,
`sputtering.
`
`
`However,
`the conventional barrier film for preventing
`
`
`
`and Japanese Patent Application No. 10-330938. Herein,
`
`
`
`
`
`
`
`
`
`
`
`
`copper diffusion is accormpanied with the following prob-
`Japanese Patent ApplicationNo. 10-330938 is not published
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`lems.
`yet, and hence does not constitute prior art to the present
`
`
`
`
`
`
`
`
`
`Thefirst problem is that it is quite difficult to make a
`invention. However,it is explained in the specification only
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`diffusion-barrier film Kave both a characteristic of prevent-
`for better understanding of the present invention. The appli-
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`ing copper diffusion and a sufficient adhesive force with
`cant does not’ admit that Japanese Patent Application No.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`copper..
`:
`10-330938 constitutes prior art to the present invedtion.
`|
`
`
`
`
`
`
`
`- As illustrated in FIG. 2,it is now assumedto form a metal
`It is quite difficult todry-etch copper, and hence, a copper
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`wiring layer is formed generally by chemical mechanical
`film 5 having a crystallized pillar structure, on a semicon-
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`ductor substrate 4. In the metal film 5, a lot of grains each
`polishing (CMP).
`
`
`
`
`
`
`
`
`
`
`
`
`65
`Specifically, a copper wiring layer is formed as follows,
`comprised of individual crystals, and grain boundaries 7
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`’ each defining an interface between the grains 6 exist
`An insulating film is formed on’an underlying copper
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`throughout the metalfilm 5, that is, from an upper surface to
`wiring layer. Then,
`the insulating film is formed with a
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`_
`
`Page 36 of 333
`
`Page 36 of 333
`
`

`

`
`
`
`
`
`
`
`
`
`
`US 6,538,324 B1
`
`
`
`
`
`
`
`
`
`
`
`4
`3
`The third problem relates to coverage ofa film formed by
`
`
`
`
`
`
`
`
`
`a bottom of the metal film 5. The grain boundaries 7