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`Samsung Exhibit 1020
`Samsung Electronics Co., Ltd. v. Daniel L. Flamm
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`Cu lines formed by other fabrication methods,
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`References
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`(1) D.S.Gardner,J.Onuki.l(.Kudo and Y.Misawa: Proc. VLSI Multilcvcl
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`Inmycanneclion Conf. (1991) 13.99,
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`(2)
`N.Misawa.S.K1'sh'ti,T.0hba.Y.Arimot0,Y.Furumura and H.Tsutikawa:
`VLSI Multilevel lnierconnccljon Conf. (1993) p.353
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`H.»K.Kang.l.Asano,C.Ryu,S.S.Wong and J.A.T.N0nna.n: Proc. VLSI
`(3)
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`Multilevel Interconnection Conf. 0993) 9.223.
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`(4) Y.Igarashi.T.Yamanobe,T.Yamaji,S.Nishikawa and T.lto: SSDM
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`Ext.Abst. (1993) p.549
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`S.Vaidya,'I'.T.Sheng and A.K.Sinha: App1.Phys.Lett. 36 (1930) p.464.
`(5)
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`_
`-
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`[Si]/[Cl] = 0.2
`[N]/[CI] = 2.4.
`1
`l
`i
`1
`1
`
`
`
`
`
`
`
`/N
`/Cl
`(a) SiC|
`
`:20/210/2120 (sccm)
`)YWv*l1r-’l»M’v‘v’llll“1
`Si
`
`
`
`
`
`
`
`I
`
`
`
`140
`
`120
`
`100
`
`WO
`
`C)O
`
`V
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`
`
`Thicknessofsidewallfilmnm)
`
`40
`0.10 0.12 0.14 0.16 0.18 0.20 0.22
`
`
`[Si]/[Cl]
`Fig.1 . Thickness of the sidewall film as a function of the [Si]/|C1l ratio on
`
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`the NH; flow ratio of 0, 7. I0 and 15%.
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`103
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`{sitQ‘}t3i;7l<l;';éBi1'671'6§i1'é6'§bc
`[N]/[C'l=2-4 [Si]/lC|]=0.2?
`
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`;Pressure = 30mTorr
`lTemperature = 300°C
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`
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`lfgyxgr
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`A EE\Ec
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`\—/
`cu..
`ni._
`on
`E4:
`o..
`UJ
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`‘
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`Signals from under-
`laycr (Cu) pile up on
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`these Cu signals.
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`0
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`(b) SiC|4/CI2 /N2 /NH3
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`=20/10/1 14/12 sccm)
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`s1
`
`O
`
`1 0 _
`500
`
`.
`
`1
`1
`t_ ._l_..
`2000
`1500
`1000
`
`
`
`Kinetic Energy (ev)
`_
`_
`‘
`_
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`Fig.3. AES spectra of the sidewall films: (a) without and (b) with NH, How.
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`[CI] = 0.12): (a) 02pm wide line; (b) 0.3um line and space.
`Fig.4. Cross-sectional view of Lhl: interconnects after etclting(NI-I, = 7% : [Si]/
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`LO L0
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`Cumulativefailurerate(%)
`
`°c i
`12:“
`M?
`
`2
`
`.
`
`.
`
`_
`
`I
`
`.
`
`..
`
`100
`
`
`Time (hours)
`Fig.6. Cumulative failure of interconnects.
`
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`1000
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`1994 Symposium on VLSI Technology Digest of Technical Papers
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`58
`
`O
`1 5
`1 O
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`N H3 flow rafio (0/O)
`Fig.2. Etching rate of Cu and SiO1 as a function of the NH; flow ratio.
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`4500
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`W/L = 0.5|.tm/22mm
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`
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`Temperature = 200°C
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`Lineresistance((2)
`
`
`
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`2500
`100
`
`
`
`1
`*
`
`1000
`10000
`
`
`Time (sec)
`._
`_
`,
`_
`Fig.5. Resistance change of the 0.6u.m intcrcnnncct under EM test condition.
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`100000
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`Page 2 of 2
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