`
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`
`UNITED STATES PATENT AND TRADEMARK OFFICE
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`
`
`Taiwan Semiconductor Manufacturing Company, Ltd.
`
`Petitioner
`
`v.
`
`Godo Kaisha IP Bridge 1
`
`
`
`
`
`Patent Owner
`
`
`
`Patent No. 6,197,696
`Filing Date: March 23, 1999
`Issue Date: March 6, 2001
`
`Title: METHOD FOR FORMING INTERCONNECTION STRUCTURE
`
`
`
`Inter Partes Review No. IPR2016-01377
`
`
`
`PETITION FOR INTER PARTES REVIEW
`UNDER 35 U.S.C. §§ 311-319 AND 37 C.F.R. § 42.100 ET SEQ.
`
`
`
`

`

`Table of Contents
`
`I.
`
`Preliminary Statement ............................................................................... 1
`
`II.
`
`Technological Background ........................................................................ 1
`
`A.
`
`B.
`
`Integrated Circuits and Interconnections ............................................ 1
`
`Semiconductor Etching and Photolithography ................................... 4
`
`III. The ’696 Patent .......................................................................................... 7
`
`A. Description of the Challenged Claims ................................................ 7
`
`B.
`
`C.
`
`Examination of the ’696 Patent .........................................................21
`
`The Challenged Claims Are Not Entitled to the Benefit of
`Foreign Priority .................................................................................22
`
`1.
`
`2.
`
`3.
`
`4.
`
`The first, second, and fourth embodiments of the ’371
`application do not disclose step h) of claim 10 ........................23
`
`The third, variant of the third, and fourth embodiments
`do not disclose step i) of claim 10 ...........................................25
`
`The third, variant of the third, and fourth embodiments
`do not disclose step j) of claim 10 ...........................................27
`
`No embodiments of the ’371 application disclose step l)
`of claim 10 ..............................................................................29
`
`IV. Statement of Precise Relief Requested for Each Claim Challenged ......30
`
`A.
`
`Claims for Which Review is Requested ............................................30
`
`Statutory Grounds of Challenge ........................................................30
`
`Level of Ordinary Skill .....................................................................30
`
`Claim Construction ...........................................................................30
`
`B.
`
`C.
`
`D.
`
`
`
`

`

`V. Claims 10–12 of the ’696 Patent Are Unpatentable Over the Prior
`Art ..............................................................................................................31
`
`A. Disclosures of the Prior Art...............................................................31
`
`1.
`
`2.
`
`3.
`
`Grill (U.S. Patent No. 6,140,226) ............................................31
`
`Aoyama (U.S. Patent No. 5,592,024) ......................................37
`
`A POSITA would have combined teachings of Grill and
`Aoyama ...................................................................................39
`
`B.
`
`Grill Renders Claims 10 and 11 Obvious ..........................................42
`
`1.
`
`2.
`
`Claim 10 is obvious in view of Grill .......................................43
`
`Claim 11 is obvious in view of Grill .......................................59
`
`C.
`
`The Grill-Aoyama Combination Renders Claims 10–12
`Obvious ............................................................................................59
`
`1.
`
`2.
`
`3.
`
`Claim 10 is obvious in view of the Grill-Aoyama
`combination ............................................................................60
`
`Claim 11 is obvious in view of the Grill-Aoyama
`combination ............................................................................73
`
`Claim 12 is obvious in view of the Grill-Aoyama
`combination ............................................................................74
`
`D. Alternative Combinations for Claim 11 ............................................78
`
`1.
`
`2.
`
`3.
`
`4.
`
`Disclosure of Wetzel (U.S. Patent No. 5,920,790) ...................78
`
`A POSITA would have combined teachings of Wetzel
`with teachings of Grill ............................................................79
`
`A POSITA would have combined teachings of Wetzel
`with teachings of Grill and Aoyama ........................................80
`
`Claim 11 is obvious in view of the Grill-Wetzel
`combination ............................................................................81
`
`
`
`ii
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`

`

`5.
`
`Claim 11 is obvious in view of the Grill-Aoyama-Wetzel
`combination ............................................................................82
`
`VI. Mandatory Notices Under 37 C.F.R. §42.8 ..............................................82
`
`A.
`
`Real Parties-In-Interest .....................................................................82
`
`B.
`
`C.
`
`Related Matters .................................................................................82
`
`Lead and Back-Up Counsel ..............................................................84
`
`D.
`
`Service Information ..........................................................................84
`
`VII. Certification Under 37 C.F.R. §42.24(d) ..................................................85
`
`VIII. Payment of Fees ........................................................................................85
`
`IX. Time for Filing Petition ............................................................................85
`
`X. Grounds for Standing ...............................................................................85
`
`XI. Conclusion .................................................................................................86
`
`
`
`
`
`iii
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`

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`Table of Authorities
`
`Cases
`
`Dynamic Drinkware, LLC v. Nat’l Graphics, Inc., 800 F.3d 1375 (Fed. Cir.
`2015) ...............................................................................................................31
`
`Fiers v. Revel, 984 F.2d 1164 (Fed. Cir. 1993) .....................................................22
`
`In re Ziegler, 992 F.2d 1197 (Fed. Cir. 1993) .......................................................23
`
`Phillips v. AWH Corp., 415 F.3d 1303 (Fed. Cir. 2005) (en banc) ........................30
`
`Upsher-Smith Labs., Inc. v. PamLab L.L.C., 412 F.3d 1319 (Fed. Cir. 2005) .......43
`
`Statutes
`
`35 U.S.C. §102(e) ........................................................................................... 31, 78
`
`35 U.S.C. §103 ............................................................................................... 30, 43
`
`35 U.S.C. §321 .....................................................................................................30
`
`Other Authorities
`
`Ariosa Diagnostics, Inc. v. Illumina, Inc., IPR2014-01093, Paper 69 (Jan. 7,
`2016) ......................................................................................................... 31, 32
`
`Core Survival, Inc. v. S&S Precision, LLC, PGR2015-00022, Paper 8 (Feb.
`19, 2016) ..........................................................................................................22
`
`Rules
`
`37 C.F.R. §42.100(b) ............................................................................................31
`
`37 C.F.R. §42.101(b) ............................................................................................85
`
`37 C.F.R. §42.103(a) ............................................................................................85
`
`37 C.F.R. §42.104(a) ............................................................................................85
`
`37 C.F.R. §42.108 .................................................................................................22
`
`37 C.F.R. §42.15(a) ..............................................................................................85
`
`
`
`iv
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`

`

`37 C.F.R. §42.24 ...................................................................................................85
`
`
`37 C.F.R. §42.24 ................................................................................................. ..8537 C.F.R. §42.24 ................................................................................................. ..8537 C.F.R. §42.24 ................................................................................................. ..85
`
`37 C.F.R. §42.8 ............................................................................................... 82, 85
`
`
`37 C.F.R. §42.8 ............................................................................................. ..82, 8537 C.F.R. §42.8 ............................................................................................. ..82, 8537 C.F.R. §42.8 ............................................................................................. ..82, 85
`
`
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`
`
`
`
`v
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`

`

`LIST OF EXHIBITS
`
`Petition Exhibit 1001: U.S. Patent No. 6,197,696 to Aoi et al.
`
`Petition Exhibit 1002: Expert Declaration of Dr. Bruce W. Smith, Ph.D.
`
`Petition Exhibit 1003: U.S. Patent No. 3,617,824 to Shinoda et al.
`
`Petition Exhibit 1004: U.S. Patent No. 3,838,442 to Humphreys.
`
`Petition Exhibit 1005: U.S. Patent No. 6,140,226 to Grill et al.
`
`Petition Exhibit 1006: U.S. Patent No. 5,635,423 to Huang et al.
`
`Petition Exhibit 1007: U.S. Patent No. 5,741,626 to Jain et al.
`
`Petition Exhibit 1008: C. Akrout et al., “A 480-MHz Microprocessor in a
`0.12µm Leff CMOS Technology with Copper
`Interconnects,” IEEE J. of Solid-State Circuits, Vol. 33,
`no. 11 (November 1998).
`
`
`Petition Exhibit 1009:
`
`J.N. Burghartz et al., “Monolithic Spiral Inductors
`Fabricated Using a VLSI Cu-Damascene Interconnect
`Technology and Low-Loss Substrates,” International
`Electron Devices Meeting (December 1996).
`
`
`Petition Exhibit 1010: U.S. Patent No. 6,100,184 to Zhao et al.
`
`Petition Exhibit 1011: U.S. Patent No. 6,103,616 to Yu et al.
`
`Petition Exhibit 1012: File History of U.S. Patent No. 6,197,696 to Aoi et al.
`
`Petition Exhibit 1013:
`
`Japanese Patent Application No. 10-079371 to Aoi.
`
`Petition Exhibit 1014: Certified Translation of Japanese Patent Application No.
`10-079371 to Aoi.
`
`Petition Exhibit 1015:
`
`Japanese Patent Application No. 11-075519 to Aoi.
`
`Petition Exhibit 1016: Certified Translation of Japanese Patent Application No.
`11-075519 to Aoi.
`
`Petition Exhibit 1017: U.S. Provisional Patent Application No. 60/071,628.
`
`
`
`vi
`
`

`

`Petition Exhibit 1018: U.S. Patent No. 5,592,024 to Aoyama et al.
`
`Petition Exhibit 1019: U.S. Patent No. 5,920,790 to Wetzel et al.
`
`
`
`vii
`
`

`

`I.
`
`Preliminary Statement
`
`U.S. Patent No. 6,197,696 (Ex. 1001) is directed to methods for forming
`
`integrated circuit “interconnects,” which link components in a microchip. In
`
`particular, the ’696 patent is directed to common “dual damascene” processes for
`
`forming interconnects.
`
`Supported by the Expert Declaration of Bruce Smith, Ph.D., (Ex. 1002), this
`
`Petition establishes that challenged claims 10–12 are unpatentable. Rather than
`
`defining novel or nonobvious subject matter, the challenged claims recite well-
`
`known processes for making well-known structures. TSMC respectfully requests
`
`inter partes review under 35 U.S.C. §§311–319 and 37 C.F.R. §42.100 et seq., and
`
`cancellation of the challenged claims.
`
`II. Technological Background
`
`A.
`
`Integrated Circuits and Interconnections
`
`Integrated circuits contain millions of discrete semiconductor devices
`
`electrically connected by “interconnections,” or “interconnects,” to form circuits.
`
`Shinoda (Ex. 1003), which dates to 1965, provides an early example. (Ex. 1003,
`
`4:30–73, Figs. 6, 7 (below with highlights and annotations).)
`
`

`

`
`
`
`
`Interconnects typically have “via” portions extending between the planes of
`
`adjacent layers to provide electrical connections between those layers. (Ex. 1002,
`
`¶33.) Interconnects also typically have “trench” patterns, which act as wires to
`
`define circuits by linking the vias appropriately. These interconnect schemes were
`
`common years before the application for the ’696 patent was filed. (See, e.g., Ex.
`
`1004, Abstract, 1:54–2:6, 8:19–54, Figs. 6, 6A (below with highlights), 7, 7A.)
`
`
`
`2
`
`

`

`
`
`Multiple levels of interconnects are typical. (Ex. 1002, ¶34.) Examples of
`
`this type of wiring scheme, which was also common years before the time the
`
`application for the ’696 patent was filed, appear below. (Ex. 1008, 1–4, Fig. 2; Ex.
`
`1009, 1–2, Fig. 2; Ex. 1002, ¶34.)
`
`
`
`
`
`In a dual damascene process, via and trench structures are formed during the
`
`same process. (See Ex. 1009, 1; Ex. 1002, ¶35.) Via and trench patterns are
`
`etched into insulating material, then filled with metal and polished flat. (Ex. 1002,
`
`¶35.) Dual damascene processes result in the typical via- trench interconnect
`
`structure described above. (Ex. 1005, 1:45–48, 3:33–36; Ex. 1006, Abstract, 2:61–
`
`
`
`3
`
`

`

`3:2, 3:54–57; Ex. 1007, 2:15–20.) Examples appear below with annotations. (Ex.
`
`1005, Fig. 1L; Ex. 1006, Figs. 6(c), 9; Ex. 1007, Fig. 5.)
`
` Ex. 1005
`
` Ex. 1006
`
`
`
`
`
` Ex. 1007
`
` Ex. 1006
`
`
`
`
`
`B.
`
`Semiconductor Etching and Photolithography
`
`Two processing technologies that can create patterns in a semiconductor
`
`wafer are photolithography and etching. In photolithography, a chemical called
`
`photoresist coats the surface of the semiconductor wafer. (Ex. 1002, ¶37.)
`
`Photoresist changes its molecular structure when illuminated under certain
`
`conditions. (Id.) A photomask, which is transparent in some regions and opaque
`
`
`
`4
`
`

`

`in others, contains a pattern that can be transferred to the photoresist. (Id., ¶38.)
`
`After the photomask is aligned to the coated wafer, the photoresist is illuminated
`
`through the photomask. (Id.) The exposed photoresist is altered by the light, and
`
`any photoresist not part of the pattern can be removed with a chemical
`
`“developer.” (Id., ¶39.)
`
`The processed wafer retains the patterned photoresist layer, which can
`
`pattern material underneath. (Id.) Schematic representations of photolithography
`
`appear below. (Id., ¶40.)
`
`
`
`A patterned photoresist layer can serve as a mask during an “etch” process.
`
`In etching, the surface of the processed wafer (semiconductor substrate and/or
`
`overlying layers) is exposed to corrosive chemicals to remove certain portions.
`
`(Id., ¶42.) After etching, the photoresist may be “stripped” (removed) by another
`
`chemical treatment. (Id., ¶43.) In some cases, the etching process itself may even
`
`remove the photoresist. A representation of photolithography and etching appears
`
`below.
`
`
`
`5
`
`

`

`(Id.)
`
`
`
`An etch that attacks all exposed materials is called a non-selective etch,
`
`whereas an etch that attacks certain material compositions more than others is
`
`called a selective etch. (Id., ¶44.) An etch that attacks a material in all directions
`
`is called isotropic, whereas an etch that attacks in a preferred direction (often
`
`perpendicular to the surface of the wafer) is called anisotropic. (Id., ¶45.) An etch
`
`that uses a liquid etching agent is a “wet” etch, whereas an etch that does not use a
`
`liquid etching agent (typically using an ionized gas, called a “plasma”) is a “dry”
`
`etch. (Id., ¶46.) Dual damascene processes typically use selective, anisotropic, dry
`
`etching. (Id., ¶47; see also, e.g., Ex. 1006, 2:61–63; Ex. 1010, 2:44–48; Ex. 1011,
`
`4:9–12.)
`
`
`
`6
`
`

`

`III. The ’696 Patent
`
`A. Description of the Challenged Claims
`
`This Petition challenges the patentability of claims 10–12 of the ’696 patent.
`
`Independent claim 10 recites “[a] method for forming an interconnection
`
`structure,” and claims 11 and 12 depend from claim 10. (Ex. 1001, 34:1–57.) As
`
`illustrated below, claim 10 reads on several embodiments of the ’696 patent. (Ex.
`
`1002, ¶¶48–127; see also Ex. 1001, 22:47–29:60, Figs. 21(a)–37(b).) The
`
`declaration of Dr. Smith also describes the challenged claims and the embodiments
`
`of the ’696 patent. (See Ex. 1002, ¶¶48–139.)
`
`1.
`
`step a) of Claim 10
`
`Step a) of claim 10 recites “forming a first insulating film [503, 602] over
`
`lower-level metal interconnects [501, 601].”
`
`In the fifth embodiment the claimed first insulating film is “first organic film
`
`503[/553],” located over first metal interconnects 501 [or 551]. (Ex. 1001, 22:52–
`
`60, 24:60–25:1, Figs. 21(a), 24(a); Ex. 1002, ¶¶51–52.) In the sixth embodiment
`
`the claimed first insulating film is “silicon nitride film 602[/652],” located over
`
`first metal interconnects 601 [or 651]. (Ex. 1001, 28:1–9, 30:1–11, Figs. 30(a),
`
`33(a); Ex. 1002, ¶¶53–54.) Examples of step a) from the fifth and sixth
`
`embodiments of the ’696 patent are shown below with highlights. (Ex. 1001,
`
`22:52–23:24, 28:1–36, Figs. 21(a), 30(a); Ex. 1002, ¶¶50–55.)
`
`
`
`7
`
`

`

`
`
`
`
` Fifth Embodiment
`
`
`
`
`
`Sixth Embodiment
`
`
`
`
`
`2.
`
`step b) of Claim 10
`
`Step b) of claim 10 recites “forming a second insulating film [504, 603],
`
`having a different composition than that of the first insulating film, over the first
`
`insulating film [503, 602].”
`
`In the fifth embodiment the claimed second insulating film is “first silicon
`
`dioxide film 504[/554],” with a composition that differs from the first insulating
`
`film (first organic film 503 [or 553]). (Ex. 1001, 22:57–62, 24:65–25:3, Figs.
`
`21(a), 24(a); Ex. 1002, ¶¶57–58.) In the sixth embodiment the claimed second
`
`insulating film is “first organic film 603[/653],” with a composition that differs
`
`from the first insulating film (silicon nitride film 602 [or 652]). (Ex. 1001, 28: 1–
`
`9, 30:1–9, Figs. 30(a), 33(a); Ex. 1002, ¶¶59–60.) Examples of step b) from the
`
`’696 patent are shown below with highlights. (Ex. 1001, 22:57–62, 28:1–36, Figs.
`
`21(a), 30(a); Ex. 1002, ¶¶56–61.)
`
`
`
`8
`
`

`

`
`
`
`
` Fifth Embodiment
`
`
`
`
`
`
`
`Sixth Embodiment
`
`3.
`
`step c) of Claim 10
`
`Step c) of claim 10 recites “forming a third insulating film [505, 604],
`
`having a different composition than that of the second insulating film, over the
`
`second insulating film [504, 603].”
`
`In the fifth embodiment the claimed third insulating film is “second organic
`
`film 505[/555],” with a composition that differs from the second insulating film
`
`(first silicon dioxide film 504 [or 554]). (Ex. 1001, 22:60–64, 25:1–6, Figs. 21(a),
`
`24(a); Ex. 1002, ¶¶63–64.) In the sixth embodiment the claimed third insulating
`
`film is “silicon dioxide film 604[/654],” with a composition that differs from the
`
`second insulating film (first organic film 603 [or 653]). (Ex. 1001, 28: 6–11, 30:6–
`
`11, Figs. 30(a), 33(a); Ex. 1002, ¶¶65–66.) Examples of step c) from the ’696
`
`patent are shown below with highlights. (Ex. 1001, 22:60–64, 28:1–36, Figs.
`
`21(a), 30(a); Ex. 1002, ¶¶62–67.)
`
`
`
`9
`
`

`

`
`
` Fifth Embodiment
`
`
`
`
`
`
`
`Sixth Embodiment
`
`4.
`
`step d) of Claim 10
`
`Step d) of claim 10 recites “forming a fourth insulating film [506, 605],
`
`having a different composition than that of the third insulating film, over the third
`
`insulating film [505, 604].”
`
`In the fifth embodiment the claimed fourth insulating film is “second silicon
`
`dioxide film 506[/556],” with a composition that differs from the composition of
`
`the third insulating film (second organic film 505 [or 555]). (Ex. 1001, 22:62–67,
`
`25:3–9, Figs. 21(a), 24(a); Ex. 1002, ¶¶69–70.) In the sixth embodiment the
`
`claimed fourth insulating film is “second organic film 605[/655],” with a
`
`composition that differs from the composition of the claimed third insulating film
`
`(silicon dioxide film 604 [or 654]). (Ex. 1001, 28: 9–14, 30:9–14, Figs. 30(a),
`
`33(a); Ex. 1002, ¶¶71–72.) Examples of step d) from the ’696 patent are shown
`
`below with highlights. (Ex. 1001, 22:62–67, 28:1–36, Figs. 21(a), 30(a); Ex. 1002,
`
`¶¶68–73.)
`
`
`
`10
`
`

`

`
`
` Fifth Embodiment
`
`
`
`
`
`
`
`Sixth Embodiment
`
`5.
`
`step e) of Claim 10
`
`Step e) of claim 10 recites “forming a thin film [507, 606] over the fourth
`
`insulating film [506, 605].”
`
`In the fifth embodiment, “a titanium nitride film 507[/557] (thin film) is
`
`deposited to be 50 nm thick.” (Ex. 1001, 23:1–3, 25:9–11, Figs. 21(a), 24(a); Ex.
`
`1002, ¶¶75–76.) In the sixth embodiment, “a titanium nitride film 606[/656] (thin
`
`film) is deposited to be 50 nm thick.” (Ex. 1001, 28:14–16, 30:14–16, Figs. 30(a),
`
`33(a); Ex. 1002, ¶¶77–78.) Examples of step e) from the ’696 patent are shown
`
`below with highlights. (Ex. 1001, 23:1–3, 28:1–36, Figs. 21(a), 30(a); Ex. 1002,
`
`¶¶74–79.)
`
`
`
`
`
` Fifth Embodiment
`
`
`
`
`
`
`
`Sixth Embodiment
`
`
`
`11
`
`

`

`6.
`
`step f) of Claim 10
`
`Step f) of claim 10 recites “forming a first resist pattern [508, 607] on the
`
`thin film [507, 606], the first resist pattern having openings for forming wiring
`
`grooves.”
`
`In the fifth embodiment “a first resist pattern 508[/558], having openings for
`
`forming wiring grooves, is formed by lithography on the titanium nitride film
`
`507[/557].” (Ex. 1001, 23:25–27, 25:19–21, Figs. 21(b), 24(b); Ex. 1002, ¶¶81–
`
`82.) In the sixth embodiment “a first resist pattern 607[/657], having openings for
`
`forming wiring grooves, is formed by lithography on the titanium nitride film
`
`606[/656].” (Ex. 1001, 28:37–39, 30:37–39, Figs. 30(b), 33(b); Ex. 1002, ¶¶82–
`
`83.) Examples of step f) from the ’696 patent are shown below with highlights.
`
`(Id., 23:25–27, 28:37–43, Figs. 21(b), 30(b); Ex. 1002, ¶¶80–85.)
`
`
`
` Fifth Embodiment
`
`
`
`
`
`Sixth Embodiment
`
`7.
`
`step g) of Claim 10
`
`Step g) of claim 10 recites “etching the thin film [507, 606] using the first
`
`resist pattern [508, 607] as a mask, thereby forming a mask pattern [509, 608] out
`
`of the thin film to have the openings for forming wiring grooves.”
`
`
`
`12
`
`

`

`In the fifth embodiment “the titanium nitride film 507[/557] is dry-etched
`
`using the first resist pattern 508[/558] as a mask, thereby forming a mask pattern
`
`509[/559], having openings for forming wiring grooves, out of the titanium nitride
`
`film 507[/557].” (Ex. 1001, 23:27–32, 25:21–25, Figs. 21(c), 24(c); ex. 1002,
`
`¶¶87–88.) In the sixth embodiment “the titanium nitride film 606[/656] is dry-
`
`etched using the first resist pattern 607[/657] as a mask, thereby forming a mask
`
`pattern 608[/658], having openings for forming wiring grooves, out of the titanium
`
`nitride film 606[/656].” (Ex. 1001, 28:39–43, 30:39–43, Figs. 30(c), 33(c); Ex.
`
`1002, ¶¶89–90.) Examples of step g) from the ’696 patent are shown below with
`
`highlights. (Ex. 1001, 23:27–32, 28:37–43, Figs. 21(c), 30(c); Ex. 1002, ¶¶86–91.)
`
` Fifth Embodiment
`
`
`
`
`
`
`
`Sixth Embodiment
`
`
`
`
`
`8.
`
`step h) of Claim 10
`
`Step h) of claim 10 recites “removing the first resist pattern [508, 607] and
`
`then forming a second resist pattern [510, 609] on the fourth insulating film [506,
`
`605] and the mask pattern [509, 608], the second resist pattern having openings for
`
`forming contact holes.”
`
`
`
`13
`
`

`

`In the fifth embodiment, “the first resist pattern 508[/558] is removed.” (Ex.
`
`1001, 23:33–34, 25:26–27, Figs. 22(a), 25(a).) “Then, as shown in FIG.
`
`22(b)[/FIG. 25(b)], a second resist pattern 510[/560], having openings for forming
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`contact holes, is formed by lithography on the mask pattern 509[/559].” (Id.,
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`23:40–42, 25:27–35, Figs. 22(b), 25(b); Ex. 1002, ¶¶93–94.) In the sixth
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`embodiment, “the first resist pattern 607[/657] is removed.” (Ex. 1001, 28:44–46,
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`30:44–46, Figs. 31(a), 34(a).) “Then, as shown in FIG. 31(b)[/FIG. 34(b)], a
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`second resist pattern 609[/659], having openings for forming contact holes, is
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`formed by lithography on the mask pattern 608[/658].” (Id., 28:49–51, 30:49–57,
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`Figs. 31(b), 34(b); Ex. 1002, ¶¶95–96.) Examples of step h) from the ’696 patent
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`are shown below with highlights. (Ex. 1001, 23:33–42, 28:44–51, Figs. 22(a),
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`22(b), 31(a), 31(b); Ex. 1002, ¶¶92–97.)
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`14
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` Fifth Embodiment
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`Sixth Embodiment
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`9.
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`step i) of Claim 10
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`Step i) of claim 10 recites “dry-etching the fourth insulating film [506, 605]
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`using the second resist pattern [510, 609] and the mask pattern [509, 608] as a
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`mask, thereby patterning the fourth insulating film [506, 605] to have the openings
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`for forming contact holes.”
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`In the fifth embodiment, “the second silicon dioxide film 506[/556] is dry-
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`etched using the second resist pattern 510[/560] and the mask pattern 509[/559] as
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`a mask, thereby forming a patterned second silicon dioxide film 506A[/556A]
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`having openings for forming contact holes.” (Ex. 1001, 23:42–46, 25:36–41, Figs.
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`22(c), 25(c); Ex. 1002, ¶¶99–100.) In the sixth embodiment, “the second organic
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`film 605[/655] is dry-etched using the second resist pattern 609[/659] and the mask
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`pattern 608[/658] as a mask, thereby forming a patterned second organic film
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`605A[/655A] having openings for forming contact holes.” (Ex. 1001, 28:51–55,
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`30:58–62, Figs. 31(c), 34(c); Ex. 1002, ¶¶101–02.) Examples of step i) from the
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`’696 patent are shown below with highlights. (Ex. 1001, 23:42–46, 28:51–55,
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`Figs. 22(c), 31(c); Ex. 1002, ¶¶98–103.)
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`15
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` Fifth Embodiment
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`Sixth Embodiment
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`10.
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`step j) of Claim 10
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`Step j) of claim 10 recites “dry-etching the third insulating film [505, 604]
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`using the patterned fourth insulating film [506A, 605A] as a mask, thereby
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`patterning the third insulating film [505A, 604A] to have the openings for forming
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`contact holes.”
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`In the fifth embodiment, “the second organic film 505[/555] is dry-etched
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`using the patterned second silicon dioxide film 506A[/556A] as a mask, thereby
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`forming a patterned second organic film 505A[/555A] having openings for
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`forming contact holes.” (Ex. 1001, 23:47–51, 25:66–26:3, Figs. 23(a), 26(a); Ex.
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`1002, ¶¶105–06.) In the sixth embodiment, “the silicon dioxide film 604[/654] is
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`dry-etched using the patterned second organic film 605A[/655A] as a mask,
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`thereby forming a patterned silicon dioxide film 604A[/654A] having openings for
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`forming contact holes.” (Ex. 1001, 29:1–5, 31:7–11, Figs. 32(a), 35(a); Ex. 1002,
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`¶¶107–08.) Examples of step j) from the ’696 patent are shown below with
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`highlights. (Ex. 1001, 23:47–51, 29:1–5, Figs. 23(a), 32(a); Ex. 1002, ¶¶104–09.)
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`16
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` Fifth Embodiment
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`Sixth Embodiment
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`11.
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`step k) of Claim 10
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`Step k) of claim 10 recites “dry-etching the patterned fourth insulating film
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`[506A, 605A] and the second insulating film [504, 603] using the mask pattern
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`[608] and the patterned third insulating film [505A, 604A] as respective masks,
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`thereby forming wiring grooves [511, 610] in the patterned fourth insulating film
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`and patterning the second insulating film to have the openings for forming contact
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`holes [512, 611].”
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`In the fifth embodiment, “the patterned second silicon dioxide film
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`506A[/556A] and the first silicon dioxide film 504[/554] are dry-etched using the
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`mask pattern 509[/559] and the patterned second organic film 505A[/555A] as
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`respective masks, thereby forming a patterned second silicon dioxide film
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`506B[/556B] having [openings for forming] wiring grooves and a patterned first
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`silicon dioxide film 504A[/554A] having openings for forming contact holes as
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`shown in FIG. 23(b)[/FIGS. 26(b) and 28(b)].” (Ex. 1001, 23:66–24:6, 26:15–22,
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`Figs. 23(b), 26(b), 28(b); Ex. 1002, ¶¶111–12.) In the sixth embodiment, “the
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`patterned second organic film 605A[/655A] and the first organic film 603[/653] are
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`17
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`dry-etched using the mask pattern 608[/658] and the patterned silicon dioxide film
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`604A[/654A] as respective masks, thereby forming a patterned second organic film
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`605B[/655B] having wiring grooves 610[/660] and a patterned first organic film
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`603A[/653A] having contact holes 611[/661].” (Ex. 1001, 29:6–12, 31:12–18,
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`Figs. 32(b), 35(b); Ex. 1002, ¶¶113–14.) Examples of step k) from the ’696 patent
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`are shown below with highlights. (Ex. 1001, 23:66–24:6, 29:6–12, Figs. 23(b),
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`32(b); Ex. 1002, ¶¶110–15.)
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` Fifth Embodiment
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`Sixth Embodiment
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`12.
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`step l) of Claim 10
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`Step l) of claim 10 recites “dry-etching the patterned third insulating film
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`[505A, 604A] and the first insulating film [503, 602] using the mask pattern [509,
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`608] and the patterned second insulating film [504A, 603A] as respective masks,
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`thereby forming wiring grooves and contact holes in the patterned third insulating
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`film and the first insulating film, respectively.”
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`In the fifth embodiment, “the patterned second organic film 505A[/555A]
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`and the first organic film 503[/553] are dry-etched using the mask pattern
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`509[/559] and the patterned first silicon dioxide film 504A[/554A] as respective
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`
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`18
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`

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`masks, thereby forming a patterned second organic film 505B[/555B] having
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`wiring grooves 511[/561] and a patterned first organic film 503A[/553A] having
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`contact holes 512[/562].” (Ex. 1001, 24:7–13, 26:22–29, Figs. 23(c), 26(c), 29(a);
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`Ex. 1002, ¶¶117–18.) In the sixth embodiment, “patterned silicon dioxide film
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`604A[/654A] and the silicon nitride film 602[/652] are dry-etched using the mask
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`pattern 608[/658] and the patterned first organic film 603A[/653A] as respective
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`masks, thereby forming a patterned silicon dioxide film 604B[/654B] having
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`wiring grooves (see FIG. 32(c)[/FIG. 35(c)]) and a patterned silicon nitride film
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`602A[/652A] having the contact holes (see FIG. 32(c)[/FIG. 35(c)]), and exposing
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`the first metal interconnects 601[/651] within the contact holes 611[/661].” (Ex.
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`1001, 29:13–20, 31:19–26, Figs. 32(c), 35(c); Ex. 1002, ¶¶119–20.) Examples of
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`step l) from the ’696 patent are shown below with highlights. (Ex. 1001, 24:7–13,
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`29:13–20, Figs. 23(c), 32(c); Ex. 1002, ¶¶116–21.)
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` Fifth Embodiment
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`Sixth Embodiment
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`13.
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`step m) of Claim 10
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`Step m) of claim 10 recites “filling in the wiring grooves and the contact
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`holes with a metal film, thereby forming upper-level metal interconnects [513,
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`
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`19
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`

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`612] and contacts [514, 613] connecting the lower- and upper-level metal
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`interconnects together.”
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`In the fifth embodiment, “a metal film is deposited over the entire surface of
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`the substrate to completely fill in the contact holes 512[/562] and the wiring
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`grooves 511[/561].” (Ex. 1001, 24:22–24, 26:38–41, Figs. 23(c), 26(c).) “As a
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`result, second metal interconnects 513[/563] and contacts 514[/564], connecting
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`the first and second metal interconnects 501[/551] and 513[/563] together, are
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`formed.” (Id., 24:33–35, 26:44–47, Figs. 23(d), 26(d); Ex. 1002, ¶¶123–24.) In
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`the sixth embodiment, “a metal film is deposited over the entire surface of the
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`substrate to completely fill in the contact holes 611[/661] and the wiring grooves
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`610[/660].” (Ex. 1001, 29:24–26, 31:30–32, Figs. 32(c), 35(c).) “As a result,
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`second metal interconnects 612[/662] and contacts 613[/663], connecting the first
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`and second metal interconnects 601[/651] and 612[/662] together, are formed.”
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`(Id., 29:35–39, 31:41–44; Ex. 1002, ¶¶125–26.) Examples of step m) from the
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`’696 patent are shown below with highlights. (Ex. 1001, 24:22–35, 29:24–39, Fig.
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`32(c); Ex. 1002, ¶¶122–27.)
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` Fifth Embodiment
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`Sixth Embodiment
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`20
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`14. Dependent Claims 11 and 12
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`Claims 11 depends from claim 10 and further recites that “at least one of the
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`first and third insulating films is mainly composed of an organic component.” (See
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`Ex. 1001, 22:52–23:24, 24:60–25:11, 28:1–36, 30:1–16, Figs. 21(a), 24(a), 30(a),
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`33(a); Ex. 1002, ¶¶128–33.)
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`Claim 12 depends from claim 10 and further recites “wherein a size of the
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`openings of the second resist pattern for forming contact holes is larger than a
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`designed size of the contact holes in a direction vertical to a direction in which the
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`upper-level metal interconnects extend.” (See Ex. 1001, 23:40–42, 25:26–65,
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`26:12–60, 28:49–51, 30:52–56, 31:49–32:6, Figs. 22(b), 25(b), 31(b), 34(b), 27(b),
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`36, 37(a); Ex. 1002, ¶¶134–39.)
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`B.
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`Examination of the ’696 Patent
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`The application for the ’696 patent was filed March 23, 1999, and claims
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`foreign priority to Japanese Patent Application No. 10-079371, filed March 26,
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`1998.
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`The original application for the ’696 patent included 15 claims. (Ex. 1012,
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`150–58.) The Exami