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`An Inlaid c\rD cu Based Integiation for sub 0'25pm Technology
`' D. Derrning, G. Bracckelurann, IZnmg'B' Fiordelice' R' Venkan-arncat
`i",r.m'^rry,'tor.t*:sor dJnro..*in Brvd., Austin' riexas 78721
`Advanced hoducs d;;ffb""a"n
`undet lay6' Thc CVD deposition of Cu on' borh Ti and Ta
`Abstract
`based'sGtraes usrea m-ttistr vis resis.noe aod inadequac
`Tbir rvport describes *," i.u"topment and-inregration of "
`.ort*i"q.-mrt is at least pattially drrc to florrine
`'nrr" r*i adranced *f,*p*..rro,
`btankct cvD copperr
`cbvicer- Thcinsitrl deposition of spuccrcdTantolumbascdor in'"-t-tit'ot"t-thc Currecrrsor ild FfracMy bqri€r
`qr,r[ fit-iiun bgs€d benier layars and P1rD g11 wdcf and i;y;;;
`;;;-1" Uc fbtr,'f in Figuro 5' Thc oLccictt
`of t*"1gcs tsiug cr/D cu as both the
`overrayers has bccn a.."*,*,J to improve nrm aohoion ^o
`tr#;;
`d'"#crcctricaro*T"ff;ducrion ftrffiru;*t*#frff:1"T'ffi#
`Coppr has proven ,oG ,rt" material of choicc for s1l- iri?'*,"*n dre banier and cvD cu improves via
`intprcontr€crion because of its :"ptlT ffi;; md adhcsiorr drarrotically' Figuf" ? is e
`qu'rer micron
`higher "l"Tt1 gr#auifirl plot of a via grus$re of 0'4 pm sizo showiog
`rcsisranc. sgarosr clecromigation, -
`^
`conductivity and towcr intc*6nn..t dctay. conry.-:: il;;urc6,i wrdcrlsyctr sttuc$res.htt:.-"- :r'csiltNoc
`er
`alrrminium tl - 31. With copper metallization' .{l. i*9_ fr^, *
`lowcr than structures without the
`'.iuJ'io
`rtduce. p::i$ j3^11 :";* undcrlaycr' -tur
`optimuri thickness sf the PvD
`"rO*iim"gttituOo
`tr*hniquc is u"ing
`conosiol and p,rocessing cost aS coqPfd wllnconvenuonat cop; *icff"ier hds been desrnined which protecs the
`the c1/D Prccrnsor arrd is thin eoough
`merallizadon intcgratioi schemes- This panerning achnique tr#;;;;fr-,
`pincboif $ thc to'p of the neocb
`requires gd srep.""*g. oi ,rt" ggnno b"T.T-.*0.*1- T fffiffi';.*.il
`hish asDcsr ruios in orol ,o provife extendibility ttuough ;;;;:
`Frgurc 8. is-a probability plot of via rcsistance
`-i?i*"ion
`for'varylng thlcknessss of PvD cu
`sevcral gvocrarion suntcs orrccr'nologv
`;;:;ili
`*a"rr"io. F\nthcr considcrafions for degosition of the
`Resultg cud Discuesion
`ln rhis worK cu(I)hfacGws) btended with.2.5% cr,cess l*n€!."r* on thetanier oslsdal includc thc nec-ersity of
`.,'Ms a,od o.4vo exccss hydmred hfac was chgcn as the ;|fr pfirr,rs of rhe banier 6d coppd films' Evidcnca
`of naintaining a clean ioufsce bcsreat
`i;;d.
`cspper pr€cursor f". ;; ctb a"po.irions.
`il;
`^ Tl.prf5
`and subsequent.t-oPry laycr,on device
`,rr.;;;;ri"l
`utitizes hydrogcn * th; *i*ins ias with : ::::jT
`ioccasod via re'tistances of via chain
`tc'npefa*tr 1*_^1y_ :..T; pril;;i;
`rqiect d sourcc tinc. A vrsf€r
`chambcrpr€sslreorr.itonresutteoinadcposittonrareofit*"oE--ouli".atlit[stlcxPogdbcric'dcoppct
`il;;;;;;g.-- S""rof inegrarion -4ry hgw baetr
`2000fumin. TheCVDctramber*rrmoonaion aclss€I:
`roca$scrpstaged u".I*-ry-* *d-f-uilv irrtcgnrcdwirh il;Jg# for the cop9T Frning of rhe vias md madl
`tilioJ*il nru frll wirh cvD coppcr, c\rD
`iffi.
`ionizedplasmapvD*l^r"i-c"idc,ivDri-uni-umniridc,
`and coppcrreflow rp"**g.tr**".J1, cvD cu films ffi; J**rtir-il**pr"rra fill' dd cl/D copper with
`deposired re r"tati*,"f,'p"*-* *ta-*a f::* ft: ngJ-lll il;* pa- coppcr reflow. Figurc 9 shows SEM crss
`resistiviv of 1.9 t$;;. trowever. slMs arratyslrj:j ;;;"; for rhe tnrcc fill rcchniques. 1x" 6unsot intcgntion
`lowlevctsof nourin'c-ii'riliiii"krr:Al1o,"^ryP":1 i--;;;;; includes spumred' L'oPPcf, at <80"c f€c
`on Taht or TiN rJt*"; strong signals of flourio",4 lirrorrro** guin -qod at voi*tec reflow ino fre
`orrygEnweredaecJa rfr" Ua"f"., by TOFSMI T*rjI Ol* sBll.t;. Elcctromigration.p-fry* has bcln
`witb oa optirnized
`i;;nd on 0'25 Fm loglc tJst 'etti"tos
`(Figtne 1)' The CYD Cu films show a srong :i: TT
`io 6" .r I l> directiorr. The grain size was.invcsti8"t 4 *tI
`suck and will he discuscd.
`the usc of focused i;;;d;hnique urd significanr grain "lcl,,o",lcdg"wrrs: Thsnks to rt"m" Hcgdc' 1; 6c' vidye
`growth was seen ,n", a 400 oc, 3min anneil. This gral ti;r,r*, s,iun sa"k"r,-.0 crir,i*o caposso' for analytical
`growthledtoao"*ie""t"nofthcfilrngndasubsequcntil;;il._"u.nooal6o-acl$owtcdg"R".Blungnthdaod
`"
`in rcsistiviry on both To1.1 and Coppcr $:yF
`Fabio Pintchovski'
`(Fignre2). Thol*gtgtd; also lead to filns wirh higher
`Relcrenccs
`"
`at- ^t ., rr pn
`reflcctiviry and reduccd roughness. (FrqT* 3 &4). Bcc't'e t. Hq C.K, ct' d" Proc' vLSI Mu,ilevel Intertonncctbn
`i"i""rya.s*? clat4 C8' p lEl' reE6'
`*ttt tt
`rhe C\fD film is to be used as a via fill ;;J"
`thc intccconnccL rhe step covaagp ot tnc nfm is crirical. i. iA, i'U and Tlng' Cff"fgi Etec' Dav' Lott" 10(9)'
`Bxccltent..n *n-ol*-i! ""it.ninorn ltotf. 5. 1ry
`B:lT:,Jlti:end tuira,y,, proc.Tech. Paoersvmp. on vLsl
`ii*,:"'h'"'f-'f.*";|ff:'X':h$ffi'"T:;i{g*:t'"ll,lUtu'ryti!:l1ae,lses
`caviry and thcrc is no cvidemce of g seam- A key aspcct fvr i. ii""iri",'u.n., 6t.
`inin soild ril^s,262, P4e5l ' 1995'
`rUe integration of CVD Cu is in rhe selection of a suiablc
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`"i.;
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`22
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`o_7so3-47oo.o/966tO,Oo o 10e8 IEEE
`
`t998 SymPosium on VLSI Tectrnology Digest o{ Technlcal Papers
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`Page 1 of 2
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`IP Bridge Exhibit 2032
`TSMC v. IP Bridge
`IPR2016-01249
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`

`

`1999+ 6F238 (il) 19; 32/*"'t9:31./\E*83803299543 P 3
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`Figuro 1. TOFSIMSo| CvD
`Cr-r/TaN inlertrac6
`
`Figure 2. Resistivlty of CVD O.t Figure 3. Fleflectivity of CvD copper
`on TaN &Cu - Al reference
`
`0,35uM
`
`Figure 5, TEM of CVD
`copper seed/ref low fill
`of dual inlaid structure-
`Low€r rnetd line i8 conv.
`seed/EP fill.
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`Contact Besistancs (Ohm)
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`Figure 7. Resigance of 0.4uM via
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`After Smln-400"C anneal
`3K[ CVD CU ON PVD CU
`Zrange 158nm RMS 16.0nm Zange 03.1 nm hMS12'o nm
`Figure 4. AFM micrographs of CVD Copper
`
`Figure 6. High mag TEM showing
`TaIUCVD copper iintefface laYer
`suspectd of causing high resislanoe
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`contact R*istance (Ohm)
`Figure 8- Resistancc of 0-4uM
`via chain which is 4350 vias in length
`
`Figure 9, FIB/SEM of integrated
`CVD coPper in dualinlaid leatures
`
`r99s Symposium on VLSI Tec*rnologv Digen of Technicat Pspers
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`23
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`Page 2 of 2
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