Multi'fing MULTILING CORPORATION
`
`180 NORTH UNIVERSITY AVE.
`Suite 600
`PROVO, UT 84601 -4474
`
`VOICE (801) 377-2000
`FAX (801) 377-7085
`
`TRANSLATOR’S CERTIFICATE OF TRANSLATION
`
`Translation from Japanese to English
`MultiLing Project Number: GBPLC1710001HQ-S
`Client: Greenblum & Bernstein, P.L.C.
`
`MultiLing Corporation, a Delaware corporation, which has its principal office at 180 North
`University Avenue, Suite 600, Provo, UT 84601-4474, USA, certifies that
`
`(a) it is a professional translation company of multiple languages including Japanese and
`English;
`(b) it has translated from the original document to the translated document identified below,
`and t0 the best of its knowledge, information, and belief the translation of that document is
`accurate as a publication quality translation; and further,
`(0) these statements were made with the knowledge that willful false statements and the like
`so made are punishable by fine or imprisonment, or both, under Section 1001 of Title 18
`of the United States Code.
`
`Original Document Identifier: Awaya (1998) (03005811); JPH08250596A (03005939);
`JPH09293690A (03002312); JPH10125627A (03005938); JPH10256256A (03002313).
`Translated Document
`Identifier: Awaya (1998)
`(O3005811)_en-US; JPH08250596A
`(03 00593 9)_en—US; JPH09293 690A (03002312)_en-US; JPHI 0 1 25 627A (0300593 8)_en-
`US; JPH10256256A (03002313)_en-US.
`
`Signed this 10th day of February 2017.
`
`kg;
`
`Michael Degn, VP at es
`
`eting
`
`ACKNOWLEDGMENT BEFORE NOTARY
`
`State of Utah
`
`County of Utah
`
`}ss.
`
`On this 10th day of February, 2017 before me, the undersigned Notary Public, personally appeared Michael Degn, who
`proved on the basis of satisfactory evidence to be the person whose name is subscribed to this Translator’s Certificate
`of Translation and who acknowledged that he or she executed the same for the purposes stated therein.
`IN WITNESS WHEREOF, I hereunto set my hand and official seal.
`f
`
`‘I‘1.J._
`
`
`otary b ic, resiing at
`DIXIE CALKINS
`-. Notary Public. State of Utah
`
`Commission #671163
`My Commission Expires
`October 09, 2017
`
`
`
`
`
`
`e l, UT
`
`Page 1 of 13
`
`IP Bridge Exhibit 2027
`TSMC v. IP Bridge
`|PR2016-01249
`
`Page 1 of 13
`
`IP Bridge Exhibit 2027
`TSMC v. IP Bridge
`IPR2016-01249
`
`

`

`(11) Patent Application Publication
`Number.
`H10-256256
`
`(19) Japan Patent Office
`(J P )
`
`(51) Int. Cl.6
`H01L
`21/3205
`
`21/265
`
`21/28
`
`
`
`
`
`(12) Japanese Unexamined
`Patent Application
`Publication (A)
`(43) Publication Date:
`FI
`
`
`H01L
`21/88
`
`21/28
`
`21/265
`
`21/88
`
`
`
`ID No.
`
`
`301
`
`
`
`
`
`
`
`
`
`
`September 25, 1998
`
`R
`301R
`Q
`M
`
`
`(total 6 pages)
`
`No. of Claims: 18 OL
`390019839
`(71) Applicant:
`Samsung Electronics Co.,
`Ltd.
`Uehondado-dong 416,
`Hachijo-gu, Suwon City,
`Gyeonggi-do, Korea
`Gwon ▲Tetsu ▼Sun
`1028-1 3-dong, Seocho-si,
`Seoul, Korea
`Kyongnam Apartment 7-707
`Patent attorney Mikoto Hata
`
`
`
`(72) Inventor:
`
`(74) Agent:
`
`
`
`
`
`
`
`Examination request: Not requested
`Application
`(21) Application No.
`H10-8037
`
`(22) Publication date:
`
`January 19, 1998
`
`(31) Priority Claim Number 97P7271
`March 5, 1997
`(32) Priority date:
`Korea (KR)
`Priority Claim Country
`
`
`
`(54) [Title of Invention] COPPER METAL WIRE
`FORMING
`METHOD
`FOR
`SEMICONDUCTOR DEVICE
`
`(57) Abstract
`[Purpose] To provide a copper metal wire forming
`method for a semiconductor device having a
`noncrystalline diffusion preventing film that can
`prevent diffusion between
`the
`semiconductor
`substrate and the copper metal film.
`[Resolution means] A copper metal wire forming
`method for a semiconductor device has an
`interlayer insulating film 15a and a diffusion
`preventing
`film
`formed
`in order on
`a
`semiconductor substrate. The diffusion preventing
`film is formed by a chemical vapor deposition
`method using any one of Mo, W, Ti, Ta, WN TiW,
`TiN, or combinations thereof. Furthermore, a
`noncrystalline diffusion preventing film 17a is
`formed by ion injection of impurities into the
`diffusion preventing film, and then a copper film
`19a is formed on the noncrystalline diffusion
`preventing film. The impurities can be one type
`selected from boron (B), nitrogen (N), and silicon
`(Si). Therefore, the diffusion of copper through
`the noncrystalline diffusion preventing film can
`be prevented.
`
`
`Page 2 of 13
`
`

`

`
`
`(2)
`
`Specification
`Title of the Invention: COPPER METAL WIRE FORMING METHOD FOR
`SEMICONDUCTOR DEVICE
`
`[DETAILED DESCRIPTION OF THE INVENTION]
`[0001]
`
`[Technical Field of the Invention] The present invention relates to a method of
`manufacturing the semiconductor device, particularly a method of forming a copper metal
`wire of a semiconductor device.
`[0002]
`
`[Background Technology] Generally, a metal wire forming method of a
`semiconductor device occupies a very important position in the semiconductor
`manufacturing process because this is a factor for determining the operation speed, yield,
`and reliability of the semiconductor device. In a conventional semiconductor device with
`low integration density, a metal wire layer was formed using pure aluminum, but an
`aluminum layer experiences contact spiking due to absorption of silicon atoms from the
`silicon substrate due to the increased temperature during a sintering step, and therefore
`Al-1% Si where aluminum is saturated with silicon is widely used as a material for the
`metal wire layer.
`[0003]
`
`However, if a wire layer of a semiconductor device is formed by using this Al-1% Si,
`silicon residue is formed by depositing silicon from the wire layer during heat treatment at
`a temperature of approximately 450°C or higher, silicon nodules are formed by phase
`epitaxial growth of silicon atoms at contact holes, and there is increased resistance of the
`metal wire layer and increased contact resistance. Forming a diffusion preventing film such
`as a TiN thin film between the metal wire layer and the silicon substrate or the insulating
`layer is commonly known in order to prevent the formation of aluminum spiking, silicon
`residue, and silicon nodules caused by the aforementioned reactions between the metal
`wire layer and the silicon substrate.
`[0004]
`
`On the other hand, copper with a lower relative resistance than conventional
`alumina metal because of a continuous reduction of the area of the semiconductor element
`is focused on as a next-generation metal wire material.
`[0005]
`
`However, the diffusion rate of copper in the diffusion preventing film is much larger
`than aluminum, and the diffusion preventing ability is lost in existing TiN films at
`temperatures of 600°C or higher. The cause is that a TiN thin film has a crystalline particle
`structure with a columnar structure, and therefore copper that primarily diffuses along the
`grain boundary cannot be effectively blocked. Furthermore, the TiN thin film is formed by
`a sputtering method, so there are disadvantages that not only is the occurrence of defects in
`the thin film due to radiation loss higher, but the step coverage is poor.
`[0006]
`
`[Problem to Be Resolved by the Invention] A technical problem of the present
`invention is to provide a copper metal wire forming method for a semiconductor device
`having a noncrystalline diffusion preventing film with excellent step coverage and that can
`block diffusion of copper through a grain boundary.
`
`Page 3 of 13
`
`

`

`
`
`(3)
`
`[0007]
`
`[Means for Resolving the Problem] In order to resolve the aforementioned technical
`problems, the copper metal wire forming method for a semiconductor device according to
`one aspect of the present invention successively forms an interlayer insulating film
`(interlevel dielectric layer) and a diffusion preventing film (diffusion barrier film). The
`diffusion preventing film is formed using any one of Mo, W, Ti, Ta, WN TiW, TiN, or
`combinations thereof. Furthermore, a noncrystalline diffusion preventing film is formed by
`ion injection of impurities into the diffusion preventing film, and then a copper film is
`formed on the noncrystalline diffusion preventing film. The impurities can be one type
`selected from boron (B), nitrogen (N), and silicon (Si). Therefore, the copper of the copper
`film will not diffuse into the interlayer insulating film because of the noncrystalline
`diffusion preventing film.
`[0008]
`
`Furthermore, the copper metal wire forming method for a semiconductor device
`according to another aspect of the present invention forms an interlayer insulating film on
`the semiconductor substrate, and then forms contact holes that expose the semiconductor
`substrate by etching. Next, a diffusion preventing film is formed on the interlayer
`insulating film and the exposed semiconductor substrate. The diffusion preventing film is
`formed using any one of Mo, W, Ti, Ta, WN TiW, TiN, or combinations thereof. Next, a
`noncrystalline diffusion preventing film is formed by ion injection of impurities into the
`diffusion preventing film. The impurities can be one type selected from boron (B), nitrogen
`(N), and silicon (Si). Next, a copper film is formed on the noncrystalline diffusion
`preventing film. Therefore, the copper of the copper film will not diffuse into the
`semiconductor substrate because of the noncrystalline diffusion preventing film.
`[0009]
`
`Furthermore, the copper metal wire forming method for a semiconductor device
`according to another aspect of the present invention has an interlayer insulating film and a
`first copper film formed in order on a semiconductor substrate. Next, a via hole that
`exposes the first copper film is formed by etching the interlayer insulating film, and then a
`diffusion preventing film is formed on the exposed first copper film and the interlayer
`insulating film. The diffusion preventing film is formed using any one of Mo, W, Ti, Ta,
`WN TiW, TiN, or combinations thereof. Next, a noncrystalline diffusion preventing film is
`formed by ion injection of impurities into the diffusion preventing film, and then a second
`copper film is formed on the noncrystalline diffusion preventing film. The impurities can
`be one type selected from boron (B), nitrogen (N), and silicon (Si).
`[0010]
`
`Furthermore, the copper metal wire forming method for a semiconductor device
`according to yet another aspect of the present invention forms a first interlayer insulating
`film on the semiconductor substrate, and then forms contact holes that expose the
`semiconductor substrate by etching. Next, a first diffusion preventing film is formed on the
`exposed semiconductor substrate and the first interlayer insulating film, and then the first
`noncrystalline diffusion preventing film is formed by ion injection of impurities into the
`first diffusion preventing film.
`[0011]
`
`Next, a first copper film and a second diffusion preventing film are formed in order
`on the first noncrystalline diffusion preventing film. Next, a second noncrystalline
`
`Page 4 of 13
`
`

`

`
`
`(4)
`
`diffusion preventing film is formed by ion injection of impurities into the second diffusion
`preventing film. Next, a second interlayer insulating film is formed on the entire surface of
`the second noncrystalline diffusion preventing film, and then a via hole that exposes the
`first copper film is formed by etching the second interlayer insulating film and the second
`noncrystalline diffusion preventing film. A third diffusion preventing layer is formed on
`the entire surface of the substrate in which the via holes are formed, and then a third
`noncrystalline diffusion preventing film is formed by ion injection of impurities into the
`third diffusion preventing film. Next, a second copper film is formed such that the via holes
`can be embedded on the third noncrystalline diffusion preventing film.
`[0012]
`
`With the copper metal wire forming method for a semiconductor device of the
`present invention, a diffusion preventing film is formed and then impurities are ion injected
`into the diffusion preventing film, so the diffusion of copper through the grain boundary
`can be prevented by making the crystal structure to be noncrystalline.
`[0013]
`
`[Description of the Preferred Embodiments] An embodiment of the present
`invention is described below in detail by referring to the attached drawings. As illustrated
`in Fig. 1, a transistor is formed with a gate oxide film 5, a gate electrode 7, a spacer 9, a
`source/drain region 11, and a capping insulating film 13 on an active region of a
`semiconductor substrate 1 limited by a field oxide film 3. At this time, the gate electrode 7
`and the capping insulating film 13 are also formed on the field insulating film 3. Next, a
`first interlayer insulating film 15 is formed on the entire surface of the resulting product
`where the transistor was formed.
`[0014]
`
`As illustrated in Fig. 2, a first interlayer insulating film pattern 15a with a contact
`hole 16 that exposes the surface of the source/drain region 11 of the semiconductor
`substrate is formed by etching the first interlayer insulating film 15 using a photoetching
`process. At this time, the capping insulating film 13 formed on the field insulating film 3 is
`also etched, and a contact hole 16 is formed to expose the gate electrode 7.
`[0015]
`
`As illustrated in Fig. 3, the first diffusion preventing film is formed on the entire
`surface of the semiconductor substrate 1 that is exposed by the contact hole 16, using any
`one of Mo, W, Ti, Ta, WN TiW, TiN, or combinations thereof, at a thickness of 100 to
`1000 Å. The diffusion preventing film is formed by a chemical vapor deposition method
`with excellent step coverage and minimal occurrence of defects, such as low-pressure
`chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition
`(PECVD) at a temperature of 300 to 600°C. Next, the first noncrystalline diffusion
`preventing film 17 is formed by ion injection of impurities such as boron (B), nitrogen (N)
`or silicon into the first diffusion preventing film at an acceleration voltage of 20 to 140
`KeV and a dose of 1016 - 1017 ions/cm2. This time, the ion injected impurity is positioned at
`the interface between the semiconductor substrate 1 and the first noncrystalline diffusion
`preventing film 17. Therefore, the first noncrystalline diffusion preventing film 17 has a
`crystalline structure that is noncrystalline because of ion injection, and therefore diffusion
`of copper through the grain boundary and into the source/drain region 11 and the gate
`electrode 7 is prevented up to 800°C. Furthermore, the first noncrystalline diffusion
`preventing film 17 prevents reaction between the first interlayer insulating film pattern 15a
`
`Page 5 of 13
`
`

`

`
`
`(5)
`
`and the first copper film of a subsequent step.
`[0016]
`
`As illustrated in Fig. 4, the first copper film 19 is formed on the entire surface of the
`substrate 1 on which the noncrystalline diffusion preventing film 17 is formed. The first
`copper film 19 is formed by metal-organic chemical vapor deposition (MOCVD). The
`second noncrystalline diffusion preventing film 21 is formed on the first copper film 19.
`The second noncrystalline diffusion preventing film 21 is formed by the same method as
`the first noncrystalline diffusion preventing film 17. The second noncrystalline diffusion
`preventing film 21 prevents reaction between the second interlayer insulating film pattern
`23 formed in a subsequent step and the first copper film 19.
`[0017]
`
`As illustrated in Fig. 5, the second noncrystalline diffusion preventing film pattern
`21a, the first copper film pattern 19a, and the first diffusion preventing film pattern 17a are
`formed by etching the second noncrystalline diffusion preventing film 21, the first copper
`film 19, and the first noncrystalline diffusion preventing film 17.
`[0018]
`
`As illustrated in Fig. 6, the second interlayer insulating film is formed on the entire
`surface of the substrate on which is formed the second noncrystalline diffusion preventing
`film pattern 21a, the first copper film pattern 19a, and the first diffusion preventing film
`pattern 17a. Next, the second interlayer insulating film pattern 23 with a via hole 24 that
`exposes the first copper film pattern 21a formed on the semiconductor substrate 1 is formed
`by etching the second interlayer insulating film and the second noncrystalline diffusion
`preventing film pattern 21a.
`[0019]
`
`As illustrated in Fig. 7, the third noncrystalline diffusion preventing film 25 is
`formed on the entire surface of the substrate such that the via hole 24 is embedded. The
`third noncrystalline diffusion preventing film 25 is formed by the same method as the first
`noncrystalline diffusion preventing film 17. The third noncrystalline diffusion preventing
`film 25 prevents reaction between the first copper film pattern 21a and the second copper
`film 27 formed in a subsequent step. Next, the second copper film 27 is formed on the third
`noncrystalline diffusion preventing film 25. The second copper film 27 is formed by the
`same method as the first copper film 19. Next, the fourth noncrystalline diffusion
`preventing film 29 is formed on the second copper film 27. The fourth noncrystalline
`diffusion preventing film 29 is formed by the same method as the first noncrystalline
`diffusion preventing film 17. The fourth noncrystalline diffusion preventing film 29
`prevents reaction between the second copper film 21 and a protective film 31 formed in a
`subsequent step.
`[0020]
`
`As illustrated in Fig. 8, the fourth noncrystalline diffusion preventing film pattern
`29a, the second copper film pattern 27a, and the third noncrystalline diffusion preventing
`film pattern 25a are formed by etching the fourth noncrystalline diffusion preventing film
`29, the second copper film 27, and the third noncrystalline diffusion preventing film 25.
`Next, the semiconductor device of the present invention is completed by forming a
`protective film 31 on the entire surface of the resulting product.
`[0021]
`
`Next, the diffusion preventing properties of the noncrystalline diffusion preventing
`
`Page 6 of 13
`
`

`

`
`
`(6)
`
`film of the present invention and a conventional diffusion preventing film are evaluated.
`Specifically, a comparison observation was made of the silicon surface according to the
`present invention where a noncrystalline diffusion preventing film and a copper film were
`successively formed on a silicon substrate, heat treated for 30 to 120 minutes at a
`temperature of 300 to 600°C and then the copper film was removed, and the silicon surface
`according to a conventional technology where a diffusion preventing film and a copper
`film or successively formed on a silicon substrate, heat treated for 30 to 120 minutes at a
`temperature of 300 to 600°C and then the copper film was removed. The results showed
`that the test pieces of the conventional method had square defects in the silicon substrate
`where the copper opened the diffusion preventing film. In contrast, the test pieces of the
`method of the present invention were found to not have the occurrence of square defects,
`and the copper did not open the noncrystalline diffusion preventing film.
`[0022]
`
`[Effect of the Invention] As described above, with the copper metal wire forming
`method for a semiconductor device of the present invention, the diffusion preventing film
`was formed by a chemical vapor deposition method with minimal defects and excellent
`step coverage, and then impurities such as nitrogen, silicon, or boron were ion injected into
`the diffusion preventing film and thereby diffusion of copper through the grain boundary
`can be prevented by making the crystalline structure noncrystalline.
`[0023]
`
`The present invention was described above in detail, but the present invention is not
`restricted to these examples, and various alternatives and improvements are possible within the
`scope of the normal knowledge of a person with ordinary skill in the art.
`
`[BRIEF DESCRIPTION OF THE DRAWINGS]
`
`Fig. 1 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 2 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 3 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 4 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 5 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 6 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 7 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`Fig. 8 is a cross-section view illustrating the copper metal wire forming method for a
`semiconductor device according to one aspect of the present invention.
`
`[DESCRIPTION OF CODES]
`1
`semiconductor substrate
`15
`first interlayer insulating film
`17
`first noncrystalline diffusion preventing film
`
`Page 7 of 13
`
`

`

`
`
`(7)
`
`19
`19
`
`first copper film
`first copper film
`
`Page 8 of 13
`
`Page 8 of 13
`
`

`

`
`
`(8)
`
`What Is Claimed Is:
`
`A copper metal wire forming method for a semiconductor device, comprising:
`1.
`a step of forming an interlayer insulating film on a semiconductor substrate;
`
`a step of forming a diffusion preventing film on the interlayer insulating film;
`
`a step of forming a noncrystalline diffusion preventing film by ion injection of
`
`impurities into the diffusion preventing film; and
`
`a step of forming a copper film on the noncrystalline diffusion preventing film.
`
`The copper metal wire forming method for a semiconductor device according to
`2.
`claim 1, wherein the diffusion preventing film is formed using any one of Mo, W, Ti, Ta,
`WN, TiW, TiN, or combinations thereof.
`
`The copper metal wire forming method for a semiconductor device according to
`3.
`claim 1, wherein the diffusion preventing film is formed by a chemical vapor deposition
`method.
`
`The copper metal wire forming method for a semiconductor device according to
`4.
`claim 1, wherein the diffusion preventing film is formed by at a thickness of 100 to 1000 Å.
`
`The copper metal wire forming method for a semiconductor device according to
`5.
`claim 1, wherein the impurity is selected from any one of boron (B), nitrogen (N), and
`silicon (Si).
`
`The copper metal wire forming method for a semiconductor device according to
`6.
`claim 1, wherein the ion injection of the impurity is performed at a dose of 1016 - 1017
`ions/cm2 and an acceleration voltage of 20 - 140 keV.
`
`A copper metal wire forming method for a semiconductor device, comprising:
`7.
`a step of forming an interlayer insulating film on a semiconductor substrate;
`
`a step of forming a contact hole that exposes the semiconductor substrate by etching
`
`the interlayer insulating film;
`
`a step of forming a diffusion preventing film on the interlayer insulating film and the
`exposed semiconductor substrate;
`
`a step of forming a noncrystalline diffusion preventing film by ion injection of
`impurities into the diffusion preventing film; and
`
`a step of forming a copper film on the noncrystalline diffusion preventing film.
`
`The copper metal wire forming method for a semiconductor device according to
`8.
`claim 7, wherein the diffusion preventing film is formed using any one of Mo, W, Ti, Ta,
`WN, TiW, TiN, or combinations thereof.
`
`The copper metal wire forming method for a semiconductor device according to
`9.
`claim 7, wherein the diffusion preventing film is formed by a chemical vapor deposition
`method.
`
`
`Page 9 of 13
`
`

`

`
`
`(9)
`
`The copper metal wire forming method for a semiconductor device according to
`10.
`claim 7, wherein the impurity is selected from any one of boron (B), nitrogen (N), and
`silicon (Si).
`
`11. A copper metal wire forming method for a semiconductor device, comprising:
`
`a step of forming a first copper film on a semiconductor substrate;
`
`a step of forming and interlayer insulating film on the first copper film;
`
`a step of forming a via hole that exposes the first copper film by etching the
`interlayer insulating film;
`
`a step of forming a diffusion preventing film on the exposed first copper film and the
`interlayer insulating film;
`
`a step of forming a noncrystalline diffusion preventing film by ion injecting
`impurities in the diffusion preventing film; and
`
`a step of forming the second copper film on the noncrystalline diffusion preventing
`film.
`
`The copper metal wire forming method for a semiconductor device according to
`12.
`claim 11, wherein the diffusion preventing film is formed using any one of Mo, W, Ti, Ta,
`WN, TiW, TiN, or combinations thereof.
`
`The copper metal wire forming method for a semiconductor device according to
`13.
`claim 11, wherein the diffusion preventing film is formed by a chemical vapor deposition
`method.
`
`The copper metal wire forming method for a semiconductor device according to
`14.
`claim 11, wherein the impurity is selected from any one of boron (B), nitrogen (N), and
`silicon (Si).
`
`15. A copper metal wire forming method for a semiconductor device, comprising:
`
`a step of forming a first interlayer insulating film on a semiconductor substrate;
`
`a step of forming a contact hole that exposes the semiconductor substrate by etching
`the first interlayer insulating film;
`
`a step of forming a first diffusion preventing film on the first interlayer insulating
`film and the exposed semiconductor substrate;
`
`a step of forming a first noncrystalline diffusion preventing film by ion injection of
`impurities into the first diffusion preventing film; and
`
`a step of forming a first copper film on the first noncrystalline diffusion preventing
`film;
`a step of forming a second diffusion preventing film on the first copper film;
`
`a step of forming a second noncrystalline diffusion preventing film by ion injection
`
`of impurities into the second diffusion preventing film; and
`
`a step of forming a second interlayer insulating film on the second noncrystalline
`diffusion preventing film;
`
`a step of forming a via hole that exposes the first copper film by etching the second
`interlayer insulating film and the second noncrystalline diffusion preventing film;
`
`a step of forming a third diffusion preventing film on the entire surface of the
`
`Page 10 of 13
`
`

`

`
`
`(10)
`
`substrate where the via holes were formed;
`
`a step of forming a third noncrystalline diffusion preventing film by ion injection of
`impurities into the third diffusion preventing film; and
`
`a step of forming a second copper film such that the via holes can be embedded on
`the third noncrystalline diffusion preventing film.
`
`The copper metal wire forming method for a semiconductor device according to
`16.
`claim 15, wherein the first through third diffusion preventing film is formed using any one
`of Mo, W, Ti, Ta, WN, TiW, TiN, or combinations thereof.
`
`The copper metal wire forming method for a semiconductor device according to
`17.
`claim 1, wherein the first through third diffusion preventing film is formed by a chemical
`vapor deposition method.
`
`The copper metal wire forming method for a semiconductor device according to
`18.
`claim 15, wherein the impurity that is ion injected into the first through third diffusion
`preventing film is selected from any one of boron (B), nitrogen (N), and silicon (Si).
`
`Page 11 of 13
`
`

`

`
`
`(ll)
`(11)
`
`
`
`
`
`Page12of13
`
`Page 12 of 13
`
`

`

`
`
`(12)
`
`
`
`
`
`FIG. 7
`
`FIG. 8
`
`51
`250
`23
`
`290
`27°
`21a I
`190
`17 P
`Rafa-2‘
`1 M '-
`
`,,
`
`A
`
`
`
`,
`
`l‘
`
`
`
`
`
` -Jlfl
`-21?“ m—
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page130f13
`
`Page 13 of 13
`
`