UNITED STATES PATENT AND TRADEMARK OFFICE
`__________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`__________
`
`LAM RESEARCH CORP.,
`
`Petitioner
`
`v.
`
`DANIEL L. FLAMM,
`
`Patent Owner
`___________
`
`U.S. Patent No. RE40,264 E
`
`Issued: April 29, 2008
`
`Named Inventor: Daniel L. Flamm
`
`Title: MULTI-TEMPERATURE PROCESSING
`___________
`
`PETITION FOR INTER PARTES REVIEW
`OF U.S. PATENT NO. RE40,264 E
`
`SEVENTH PETITION
`
`Mail Stop: PATENT BOARD
`Patent Trial and Appeal Board
`U.S. Patent & Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`6287588.11 03
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`

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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`
`TABLE OF CONTENTS
`
`Page
`
`I.
`
`INTRODUCTION ........................................................................................ 1
`
`II. MANDATORY NOTICES PURSUANT TO 37 C.F.R. § 42.8.................. 1
`
`A.
`
`B.
`
`C.
`
`D.
`
`E.
`
`F.
`
`Notice of Real Party-In-Interest (37 C.F.R. § 42.8(b)(1)) ................. 1
`
`Notice of Related Matters (37 C.F.R. § 42.8(b)(2))........................... 2
`
`Designation of Lead and Back-up Counsel (37 C.F.R.
`§ 42.8(b)(3)) ....................................................................................... 2
`
`Service Information (37 C.F.R. § 42.8(b)(4)) .................................... 2
`
`Payment of Fees (37 C.F.R. § 42.103)............................................... 2
`
`Certification of Grounds for Standing (37 C.F.R.
`§ 42.104(a)) ........................................................................................ 2
`
`III.
`
`PRIORITY DATE OF THE '264 PATENT................................................. 3
`
`A.
`
`B.
`
`C.
`
`D.
`
`Independent Claim 51 ........................................................................ 5
`
`Independent Claim 56 ........................................................................ 5
`
`Independent Claim 60 ........................................................................ 6
`
`The Continuation-In-Part Provisional Application No.
`60/058,650 Disclosure Filed September 11, 1997 ............................. 7
`
`1.
`
`2.
`
`On the Substrate Holder, Etching at the First Substrate
`Temperature, Changing to a Selected Second
`Temperature, and Etching at the Selected Second
`Temperature. ............................................................................ 7
`
`Using a Control Circuit to Change from the First
`Substrate Temperature to the Second Substrate
`Temperature within a Preselected Time Period....................... 7
`
`E.
`
`Disclosure of Parent Application No. 09/151,163 Filed Dec.
`4, 1995 ................................................................................................ 8
`
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`Page
`
`F.
`
`Claims 51-63 and 68-71 Are Only Entitled to a Priority Date
`of September 11, 1997 ..................................................................... 13
`
`IV. CHALLENGE AND RELIEF REQUESTED............................................ 13
`
`A.
`
`Specific Art and Statutory Ground(s) on Which the
`Challenges Are Based ...................................................................... 13
`
`V.
`
`VI.
`
`PERSON HAVING ORDINARY SKILL IN THE ART .......................... 15
`
`THERE IS A REASONABLE LIKELIHOOD THAT AT LEAST
`ONE CLAIM OF THE '264 PATENT IS UNPATENTABLE.................. 16
`
`A.
`
`Ground 1: Claims 51-58 and 68-69 Are Rendered Obvious
`by Kadomura, '485 Wang, and Kawamura Under 35 U.S.C.
`§ 103(a)............................................................................................. 16
`
`1.
`
`2.
`
`3.
`
`4.
`
`5.
`
`6.
`
`7.
`
`8.
`
`9.
`
`Kadomura in View of '485 Wang, and Kawamura
`Teaches All the Limitations of Independent Claim 51.......... 16
`
`Chart for Claim 51 ................................................................. 22
`
`Kadomura, '485 Wang, and Kawamura Teach All the
`Limitations of Claims 52-55 and 68-69................................. 26
`
`Charts for Claims 52-55 and 68-69........................................ 30
`
`Kadomura in View of '485 Wang, and Kawamura
`Teaches All the Limitations of Independent Claim 56.......... 32
`
`Chart for Claim 56 ................................................................. 33
`
`Kadomura, '485 Wang, and Kawamura Teach All the
`Limitations of Claims 57-58 .................................................. 34
`
`Chart for Claims 57 and 58.................................................... 35
`
`Reasons for Combinability for Claims 56-58........................ 35
`
`10. Reasons for Combinability for Claims 51-55 and 68-
`69............................................................................................ 37
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`Page
`
`B.
`
`Ground 2: Claim 59 Is Rendered Obvious by Kadomura, '485
`Wang, Kawamura, '391 Wang, and Thomas Under 35 U.S.C.
`§ 103(a)............................................................................................. 38
`
`1.
`
`2.
`
`3.
`
`4.
`
`5.
`
`Kadomura in view of '485 Wang, Kawamura, '391
`Wang, and Thomas Teaches All the Limitations of
`Independent Claim 56............................................................ 39
`
`Chart for Claim 56 ................................................................. 41
`
`Kadomura in view of '485 Wang, Kawamura, '391
`Wang, and Thomas Teaches All the Limitations of
`Claim 59................................................................................. 42
`
`Chart for Claim 59 ................................................................. 44
`
`Reasons for Combinability for Claim 59............................... 44
`
`C.
`
`Ground 3: Claims 60-61 and 71 Are Rendered Obvious by
`Kadomura, Kawamura, '485 Wang, and Fischl Under 35
`U.S.C. § 103(a)................................................................................. 45
`
`1.
`
`2.
`
`3.
`
`4.
`
`5.
`
`Kadomura in view of '485 Wang, Kawamura, and
`Fischl Teaches All the Limitations of Claim 60.................... 46
`
`Chart for Claim 60 ................................................................. 51
`
`Kadomura, Kawamura, '485 Wang, and Fischl Teach
`All the Limitations of Claims 61, 71 ..................................... 52
`
`Chart for Claims 61 and 71.................................................... 53
`
`Reasons for Combinability for Claims 60-61, 70.................. 53
`
`D.
`
`Ground 4: Claim 62 Is Rendered Obvious by Kadomura,
`Kawamura, '485 Wang, Fischl, and Tegal Under 35 U.S.C.
`§ 103(a)............................................................................................. 55
`
`1.
`
`2.
`
`Chart for Claim 62 ................................................................. 55
`
`Reasons for Combinability for Claim 62............................... 56
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`IPR Case No. Unassigned
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`Page
`
`E.
`
`F.
`
`Ground 5: Claim 63 Is Rendered Obvious by Kadomura,
`Kawamura, '485 Wang, Fischl, and Narita Under 35 U.S.C.
`§ 103(a)............................................................................................. 56
`
`1.
`
`2.
`
`Chart for Claim 63 ................................................................. 57
`
`Reasons for Combinability for Claim 63............................... 57
`
`Ground 6: Claim 70 Is Rendered Obvious by Kadomura, '485
`Wang, Kawamura, Fischl, and Hwang Under 35 U.S.C.
`§ 103(a)............................................................................................. 58
`
`1.
`
`2.
`
`Chart for Claim 70 ................................................................. 59
`
`Reasons for Combinability for Claim 70............................... 59
`
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`IPR Case No. Unassigned
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`
`TABLE OF AUTHORITIES
`
`Page(s)
`
`Cases
`Ariosa Diagnostics v. Isis Innovation Ltd. Patent Owner,
`IPR2012-00022 (MPT), 2013 WL 2181162
`(P.T.A.B. Feb. 12, 2013) .......................................................................... 3
`
`Augustine Med., Inc. v. Gaymar Indus., Inc.,
`181 F.3d 1291 (Fed. Cir. 1999) ................................................................ 3
`
`Daniel L. Flamm v. Samsung Electronics Co., Ltd., et al.,
`Case 1:15-cv-00613-LY (W.D. Tex.)....................................................... 2
`
`Gardner v. TEC Sys., Inc.,
`725 F.2d 1338 (Fed. Cir. 1984) ............................................ 27, 29, 50, 59
`
`Hollmer v. Harari,
`681 F.3d 1351 (Fed. Cir. 2012) ................................................................ 3
`
`In re Woodruff,
`919 F. 2d 1575 (Fed. Cir. 1990) ........................................... 27, 29, 50, 59
`
`KSR Int'l. Co. v. Teleflex Inc.,
`550 U.S. 398 (2007).................................................................................. 1
`
`Lam Research Corp. v. Daniel L. Flamm,
`Case 5:15-cv-01277-BLF (N.D. Cal.) .................................................. 2, 3
`
`Perfect Web Tech., Inc. v. InfoUSA, Inc.,
`587 F.3d 1324 (Fed. Cir. 2009) .............................................................. 57
`
`Statutes
`
`35 U.S.C. § 102........................................................................................... 13, 14
`
`35 U.S.C. § 103.......................................................................................... passim
`
`35 U.S.C. § 112............................................................................................... 3, 4
`
`35 U.S.C. § 120................................................................................................... 3
`
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`Page(s)
`
`35 U.S.C. § 314................................................................................................. 15
`
`35 U.S.C. §§ 311-319.......................................................................................... 1
`
`Rules
`
`37 C.F.R. § 42.100 .............................................................................................. 1
`
`37 C.F.R. § 42.103 .............................................................................................. 2
`
`37 C.F.R. § 42.104 .................................................................................. 2, 13, 16
`
`37 C.F.R. § 42.15 ................................................................................................ 2
`
`37 C.F.R. § 42.22 .............................................................................................. 13
`
`37 C.F.R. § 42.8 .............................................................................................. 1, 2
`
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`
`Exhibit
`1001
`
`Description
`U.S. Patent No. RE40,264 (the '264 patent)
`
`1002
`
`1003
`
`1004
`
`1005
`
`1006
`
`1007
`
`1008
`
`1009
`
`1010
`
`1011
`
`1012
`
`1013
`
`1014
`
`1015
`
`U.S. Patent No. 6,063,710 (Kadomura)
`
`U.S. Patent No. 5,219,485 ('485 Wang)
`
`U.S. Patent No. 5,892,207 (Kawamura)
`
`D. S. Fischl, G. W. Rodrigues, and D. W. Hess, Etching of
`Tungsten and Tungsten Silicide Films by Chlorine Atoms
`
`European Patent Application No. 90304724.9 to Lachenbruch
`et al.
`
`U.S. Pat. No. 4,913,790 (Narita)
`
`U.S. Pat. No. 4,992,391 ('391 Wang)
`
`U.S. Pat. No. 4,680,086 (Thomas)
`
`U.S. Pat. No. 5,174,856 (Hwang)
`
`Continuation-in-Part Provisional Application No. 0/058,650 filed
`Sept. 11, 1997
`
`Parent Application No. 08/567,224 filed Dec. 4, 1995
`
`Declaration of Joseph L. Cecchi, Ph.D.
`
`Curriculum Vitae of Joseph L. Cecchi, Ph.D.
`
`Daniel L. Flamm and G. Kenneth Herb, "Plasma Etching
`Technology – An Overview" in Plasma Etching, An Introduction,
`Dennis M. Manos and Daniel L. Flamm, eds. (Academic Press,
`San Diego, 1988)
`
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`In accordance with 35 U.S.C. §§ 311-319 and 37 C.F.R. § 42.100 et seq.,
`
`
`
`Petitioner Lam Research Corporation ("Lam" or "Petitioner") respectfully requests
`
`that the Board institute inter partes review of claims 51-63 and 68-71 ("challenged
`
`claims") of U.S. Patent No. RE40,264 E ("the '264 patent"), which is owned by
`
`Daniel L. Flamm ("Flamm" or "Patent Owner"), and cancel those claims because
`
`they are unpatentable in view of prior art patents and printed publications.
`
`I.
`
`INTRODUCTION
`
`The seventeen claims challenged in this Petition are all directed to a method
`
`for processing a substrate in the manufacture of a semiconductor device.1 As set
`
`forth below, the claims of the '264 patent are obvious because they are nothing
`
`more than the result of Flamm combining "familiar elements according to known
`
`methods" to "yield predictable results." KSR Int'l. Co. v. Teleflex Inc., 550 U.S.
`
`398, 416 (2007).
`
`II. MANDATORY NOTICES PURSUANT TO 37 C.F.R. § 42.8
`
`A.
`
`Notice of Real Party-In-Interest (37 C.F.R. § 42.8(b)(1))
`
`
`1 Claims 13-26, 64, and 65 are challenged in a separate IPR, "Petition 5" or
`
`the "Fifth Petition," filed concurrently with this IPR. Claims 27-50, 66, and 67 are
`
`challenged in a separate IPR, "Petition 6" or the "Sixth Petition," filed concurrently
`
`with this IPR.
`
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`The real-party in interest for this Petition is Lam Research Corporation.
`
`Notice of Related Matters (37 C.F.R. § 42.8(b)(2))
`B.
`The '264 patent is presently at issue in the declaratory judgment action Lam
`
`Research Corp. v. Daniel L. Flamm, Case 5:15-cv-01277-BLF (N.D. Cal.) and in
`
`the infringement action Daniel L. Flamm v. Samsung Electronics Co., Ltd., et al.,
`
`Case 1:15-cv-00613-LY (W.D. Tex.), and in the following IPRs: IPR2015-01759;
`
`IPR2015-01764; IPR2015-01766; and IPR2015-01768.
`
`C.
`
`Designation of Lead and Back-up Counsel (37 C.F.R. § 42.8(b)(3))
`
`Lead Counsel: Michael R. Fleming (Reg. No. 67,933)
`
`Backup Counsel: Samuel K. Lu (Reg. No. 40,707)
`
`Address: Irell & Manella LLP, 1800 Avenue of the Stars, Suite 900,
`
`Los Angeles, CA 90067 | Tel: (310) 277-1010 | Fax: (310) 203-7199
`
`D.
`
`Service Information (37 C.F.R. § 42.8(b)(4))
`
`Please address all correspondence to the lead and backup counsel above.
`
`Petitioner also consents to email service at LamFlammIPR@irell.com.
`
`E.
`
`Payment of Fees (37 C.F.R. § 42.103)
`
`The Office is authorized to charge Deposit Account No. 09-0946 for any
`
`fees required for this Petition, including the fee set forth in 37 C.F.R. § 42.15(a),
`
`referencing Docket No. 153405-0053(264IPR), and for any other required fees.
`
`Certification of Grounds for Standing (37 C.F.R. § 42.104(a))
`F.
`Petitioner certifies that the '264 patent is eligible for inter partes review and
`
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` U.S. Patent No. RE40,264
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`that Petitioner is not barred or estopped from requesting an inter partes review of
`
`the challenged claims of the '264 patent on the grounds identified herein.
`
`Petitioner has filed a declaratory judgment action for non-infringement of the
`
`claims of the '264 patent, Lam Research Corp. v. Daniel L. Flamm, Case 5:15-cv-
`
`01277-BLF (N.D. Cal.). Petitioner has not filed a declaratory judgment action for
`
`invalidity of the claims of the '264 patent. See, e.g., Ariosa Diagnostics v. Isis
`
`Innovation Ltd. Patent Owner, IPR2012-00022 (MPT), 2013 WL 2181162, at *5
`
`(P.T.A.B. Feb. 12, 2013). On Oct. 2, 2015, Daniel L. Flamm answered Lam's
`
`Complaint but did not file any counterclaims against Lam for infringement of the
`
`'264 patent. On Oct. 2, 2015, Flamm filed a Third-Party Complaint asserting
`
`claims of infringement of the '264 patent against unknown Lam customers.
`
`III. PRIORITY DATE OF THE '264 PATENT
`
`Under 35 U.S.C. § 120, a claim in a patent is entitled to the benefit of the
`
`filing date of an earlier filed application only if the subject matter of the claim as a
`
`whole is disclosed in the earlier-filed application as required by 35 U.S.C.
`
`§ 112(a). As stated by the Federal Circuit, "if any application in the priority chain
`
`fails to make the requisite disclosure of subject matter [under § 112], the later-filed
`
`application is not entitled to the benefit of the filing date of applications preceding
`
`the break in the priority chain." Hollmer v. Harari, 681 F.3d 1351, 1355 (Fed. Cir.
`
`2012); see also Augustine Med., Inc. v. Gaymar Indus., Inc., 181 F.3d 1291, 1302-
`
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`03 (Fed. Cir. 1999) ("Subject matter that arises for the first time in [a] CIP
`
`application does not receive the benefit of the filing date of the parent
`
`application.").
`
`The '264 patent is a reissue of U.S. Patent No. 6,231,776 ("the '776 patent"),
`
`which issued from Application No. 09/151,163 filed on Sept. 10, 1998 and
`
`Provisional Application No. 60/058,650 filed on Sept. 11, 1997 ("the continuation-
`
`in-part provisional application"), which is a continuation-in-part of Application No.
`
`08/567,224 ("the parent application") filed on Dec. 4, 1995. Ex. 1001. Flamm
`
`may, at the earliest, rely on a priority date of Sept. 11, 1997, the date when certain
`
`features of claims 51-63 and 68-71 were disclosed and adequately supported by a
`
`proper disclosure under 35 U.S.C. § 112 in the continuation-in-part provisional
`
`application filed on Sept. 11, 1997. Because claims 51-63 and 68-71 were not
`
`disclosed and adequately supported by the parent application, they are not entitled
`
`to priority of the parent application date. See Ex. 1013 ¶¶ 37-49. Priority is
`
`determined on a claim-by-claim not on a limitation-by-limitation basis. See
`
`M.P.E.P. § 201.11 I.B ("[I]f a claim in a continuation-in-part application recites a
`
`feature which was not disclosed or adequately supported by a proper disclosure
`
`under 35 U.S.C. [§] 112 in the parent non-provisional application, but which was
`
`first introduced or adequately supported in the continuation-in-part application,
`
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`such a claim is entitled only to the filing date of the continuation-in-part
`
`application.") (emphasis added).
`
`A.
`
`Independent Claim 51
`
`Claim 51 recites a method comprising the steps of (a) "placing a substrate
`
`having a film thereon on a substrate holder in a processing chamber; the processing
`
`chamber comprising the substrate holder, a substrate control circuit operable to
`
`adjust the substrate temperature, a substrate holder temperature sensor, and a
`
`substrate holder control circuit operable to maintain the substrate holder
`
`temperature;" (b) "performing a first etching of a first portion of the film at a
`
`selected first substrate temperature;" (c) "performing a second etching of a second
`
`portion of the film at a selected second substrate temperature, the second
`
`temperature being different from the first temperature." Ex. 1001, 24:4-19. The
`
`claim recites "the substrate temperature control circuit effectuates the change from
`
`the first substrate temperature to the second substrate temperature within a
`
`preselected time period." Id. at 24:23-26; Ex. 1013 ¶ 38.
`
`B.
`
`Independent Claim 56
`
`Claim 56 recites a method comprising the steps of (a) "placing the substrate
`
`on a substrate holder;" (b) "sensing a substrate holder temperature," (c) "etching at
`
`least a portion of a first silicon-containing layer in a chamber while the substrate is
`
`maintained at a selected first substrate temperature;" (d) "etching at least a portion
`
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`of a second silicon-containing layer in the chamber while the substrate is
`
`maintained at a selected second substrate temperature." Ex. 1001, 24:40-51. The
`
`claim recites "the substrate temperature is changed from the first substrate
`
`temperature to the second substrate temperature with a control circuit operable to
`
`effectuate the changing within a preselected time period that is less than the overall
`
`process time associated with the etching the first silicon-containing layer and the
`
`second silicon-containing layer." Id. at 24:55-61; Ex. 1013 ¶ 39.
`
`C.
`
`Independent Claim 60
`
`Claim 60 recites a method comprising the steps of (a) "transferring a
`
`substrate comprising a stack of layers including a silicide layer into a chamber, the
`
`chamber comprising a substrate holder;" (b) "sensing the substrate holder
`
`temperature;" (c) "heating the substrate holder with a substrate holder control
`
`circuit and a heating device to maintain the substrate holder at a temperature that is
`
`operable to effectuate a substrate temperature above room temperature while
`
`processing the substrate;" (d) "processing the substrate on the substrate holder at a
`
`first substrate temperature;" and (e) "processing the substrate on the substrate
`
`holder at a second substrate temperature to etch at least a portion of the silicide
`
`layer." Ex. 1001, 25:9-26. The claim recites "wherein the first substrate
`
`temperature is different from the second substrate temperature and the first
`
`substrate temperature is changed to the second substrate temperature with a
`
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`IPR Case No. Unassigned
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` Petition 7
`substrate temperature control circuit within a preselected time to etch the silicide
`
`layer." Id. at 25:27-31; Ex. 1013 ¶ 40.
`
`D.
`
`The Continuation-In-Part Provisional Application No. 60/058,650
`Disclosure Filed September 11, 1997
`
`1.
`
`On the Substrate Holder, Etching at the First Substrate
`Temperature, Changing to a Selected Second Temperature,
`and Etching at the Selected Second Temperature.
`
`In the Summary of the continuation-in-part provisional application, the
`
`following is disclosed: "In another aspect of the invention provides an apparatus
`
`for etching a substrate in the manufacture of a device using different temperatures
`
`during etching." Ex. 1011-11, lines 28-29. Claim 1 of the continuation-in-part
`
`provisional application recites "performing a first etching of a first portion of said
`
`film at a first temperature and performing a second etching of a second portion of
`
`said film at a second temperature, said first temperature being different from said
`
`second temperature." Ex. 1011-32, lines 5-7. The specification and Figure 3
`
`further discloses the programmed temperature process. Ex. 1011-49 – Ex. 1011-50
`
`("Programmed Temperature Process (Fig. 3)"); Ex. 1013 ¶ 41.
`
`2.
`
`Using a Control Circuit to Change from the First Substrate
`Temperature to the Second Substrate Temperature within a
`Preselected Time Period
`
`In the description of Figure 6 of the continuation-in-part provisional
`
`application, the following is disclosed: "Each zone has a sensor too and power
`
`input is computer controlled." Ex. 1011-46, first para. Regarding Figure 1, the
`
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` U.S. Patent No. RE40,264
` Petition 7
`continuation-in-part provisional application teaches that "[t]he desired fluid
`
`temperature is determined by comparing the desired wafer or wafer chuck setpoint
`
`temperature to a measured wafer or wafer chuck temperature." Ex. 1011-48, first
`
`para. In the description of Figure 2, the continuation-in-part provisional
`
`application teaches: "Figure 2 shows a portion of an automatic system for agile
`
`temperature control of the wafer chuck using only two reservoirs. As shown, the
`
`wafer chuck can be rapidly brought to temperature T1 by directing flow through
`
`proportional control valve V1 to the wafer chuck Similarly, the chuck can be
`
`brought substantially to a temperature T2 by directing only a flow from the
`
`reservoir T2 to the wafer chuck. Temperature sensor TC1 measures the
`
`temperature of the heat transfer fluid entering the wafer chuck and sensor TC2
`
`monitors temperature of fluid exiting the wafer chuck. Valves V1 and V2 are
`
`controlled by a control system which adjusts the total volumetric flow rate of fluid
`
`f1owing into the wafer chuck as well as the ratio of fluid flowing through V1 and
`
`V2." Ex. 1011-48 – Ex. 1011-49. The continuation-in-part provisional application
`
`Figure 3 and the description for Figure 3 disclose the etching of the native oxide at
`
`room temperature, the etching of tungsten silicide at the higher temperature, and
`
`the etching of the polysilicon at a reduced temperature, all done in the same
`
`chamber. Ex. 1011-49 – Ex. 1011-50; Ex. 1013 ¶ 42.
`
`E.
`
`Disclosure of Parent Application No. 09/151,163 Filed Dec. 4, 1995
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`The parent application, filed on Dec. 4, 1995, does not provide written
`
`description support for any of claims 51-63 and 68-71 of the '264 patent, and thus
`
`the challenged claims are entitled to priority of no earlier than Sept. 11, 1997. Ex.
`
`1013 ¶ 43. Missing from the parent application is all the above referenced
`
`provisional application disclosure, as well as the above-referenced provisional
`
`application Figures 1, 2, 3 and 6. Id.
`
`As discussed above, claims 51, 56, and 60 of the '264 patent recite a method
`
`of performing film treatment or etching on a substrate upon a substrate holder,
`
`where the film treatment or etching takes place at both a first temperature and a
`
`second temperature of the substrate and the temperature is changed within a
`
`specific time interval. The claims require using a substrate temperature control
`
`circuit and a substrate holder temperature sensor. The concepts of etching the film
`
`at the selected first temperature and etching at a second portion of the film at the
`
`selected second temperature while on the same substrate holder and using a
`
`substrate temperature control circuit and a substrate holder temperature sensor are
`
`entirely lacking from the disclosure of the parent application, and thus, the '264
`
`patent cannot claim priority to the parent application. See Ex. 1013 ¶ 44. Indeed,
`
`there is no mention of using a substrate temperature control circuit with a substrate
`
`holder temperature sensor in the parent application. See id. Moreover, there is no
`
`mention of changing the substrate holder temperature within a specific time
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`IPR Case No. Unassigned
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`interval. See id.
`
` U.S. Patent No. RE40,264
` Petition 7
`
`Only approximately one page out of 36 pages of the text of the parent
`
`application's specification touch on processing a substrate at different
`
`temperatures. Ex. 1012-45; Ex. 1013 ¶ 45. Instead of disclosing changing the
`
`temperature of a single substrate holder with a selected thermal mass to two
`
`different temperatures for processing as recited in the challenged claims, the parent
`
`application discloses multiple different substrate holders (or "pedestals") within
`
`different chambers, each of which is kept at a different temperature. Id.
`
`The parent application teaches that the temperature of the substrate is
`
`changed by moving the substrate to different a different chamber having a different
`
`pedestal between each processing step. Ex. 1013 ¶ 46. The photoresist stripping is
`
`taught as comprising two steps, followed by a cooling step. See id. First, stripping
`
`occurs in a first chamber having a pedestal set to "a temperature of about 40 °C to
`
`maintain a low wafer temperature." Ex. 1011-45, lines 16-23. In the second step,
`
`the "wafer was transferred into a [second] chamber," where "overashing was
`
`performed to substantially remove all photoresist material from the wafer." Id. at
`
`lines 24-31. The "pedestal of this chamber was at 150 to 200 °C." Id. Then, after
`
`the stripping process is completed, "the wafer is removed" from the previous
`
`chamber "and placed on the cooling station," which "reduces the temperature of the
`
`wafer." Ex. 1011-46, lines 34:2-5.
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`Thus, the stripping process described in the parent application requires at
`
`least three separate substrate temperature-adjusting devices—at least two substrate
`
`holders (one for each stripping chamber), and a separate "cooling station" to cool
`
`the wafer after the photoresist has been removed. See Ex. 1013 ¶ 47. This is in
`
`contrast to claims 51-63 and 68-71, which recite changing the temperature of a
`
`single substrate holder having a selected thermal mass to influence the etching
`
`process. See id.
`
`Accordingly, the parent application does not disclose at least the following
`
`limitations for claims 51-55, 68 and 69:
`
` "placing a substrate having a film thereon on a substrate holder in a processing
`
`chamber; the processing chamber comprising the substrate holder, a substrate
`
`control circuit operable to adjust the substrate temperature, a substrate holder
`
`temperature sensor, and a substrate holder control circuit operable to maintain
`
`the substrate holder temperature;" (Ex. 1001, 24:6-12)
`
` "performing a first etching of a first portion the film at a selected first substrate
`
`temperature; performing a second etching of a second portion the film at a
`
`selected second substrate temperature, the second temperature being different
`
`from the first temperature;" (id. at 24:13-19) and
`
`
`
`"the substrate temperature control circuit effectuates the change from the first
`
`substrate temperature to the second substrate temperature within a preselected
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`
`time period." (id. at 24:23-26; Ex. 1013 ¶ 48.)
`
`Furthermore, the parent application does not disclose at least the following
`
`limitations for claims 56-59:
`
` "placing the substrate on a substrate holder";
`
` "etching at least a portion of a first silicon-containing layer in a chamber while
`
`the substrate is maintained at a selected first substrate temperature; and etching
`
`at least a portion of a second silicon-containing layer in the chamber while the
`
`substrate is maintained at a selected second substrate temperature;" and
`
` "the substrate temperature is changed from the first substrate temperature to the
`
`second substrate temperature with a control circuit operable to effectuate the
`
`changing within a preselected time period that is less than the overall process
`
`time." Ex. 1013 ¶ 49.
`
`Likewise, the parent application does not disclose at least the following
`
`limitations for claims 60-63, 70 and 71:
`
` "transferring a substrate comprising a stack of layers including a silicide layer
`
`into a chamber,"
`
` "processing the substrate on the substrate holder at a first substrate temperature;
`
`and processing the substrate on the substrate holder at a second substrate
`
`temperature to etch at least a portion of the silicide layer;"
`
` "wherein the first substrate temperature is different from the second substrate
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`IPR Case No. Unassigned
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` U.S. Patent No. RE40,264
` Petition 7
`temperature and the first substrate temperature is changed to the second
`
`substrate temperature with a substrate temperature control circuit within a
`
`preselected time to etch the silicide layer." Ex. 1013 ¶ 50.
`
`F.
`
`Claims 51-63 and 68-71 Are Only Entitled to a Priority Date of
`September 11, 1997
`
`As shown above, the Parent Application No. 09/151,163 does not provide
`
`written description support for any of claims 51, 56 and 60 of the '264 patent, and
`
`thus these claims and dependent claims 52-55, 68 and 69 are entitled to priority of
`
`no earlier than Sept. 11, 1997.
`
`IV. CHALLENGE AND RELIEF REQUESTED
`
`Pursuant to 37 C.F.R. § 42.22(a)(1) and §§ 42.104(b) and (b)(1), Petitioner
`
`challenges claims 51-63 and 68-71 of the '264 patent. Petitioner respectfully
`
`requests inter partes review and cancellation of claims 51-63 and 68-71 of the '264
`
`patent based on the grounds detailed below.
`
`A.
`
`Specific Art and Statutory Ground(s) on Which the Challenges
`Are Based
`Pursuant to 37 C.F.R. § 42.104(b)(2), inter partes review of the '264 patent
`
`is requested in view of the following references, each of which is prior art to the
`
`'264 patent under 35 U.S.C. § 102(b): U.S. Patent No. 6,063,710 to Kadomura et
`
`al. ("Kadomura," Ex. 1002) filed Feb. 21, 1997 and issued May 16, 2000; U.S. Pat.
`
`No. 5,219,485 to Wang et al. ("'485 Wang," Ex. 1003) filed Oct. 17, 1991 and
`
`issued Jun. 15, 1993; U.S. Patent No. 5,892,207 to Kawam