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`SAMSUNG ET AL. EXHIBIT 1053
`
`Page 1 of 3
`
`

`
`
`
`‘
`
`l aperspective from Dataquest
`
`oi
`;1:t°'l;'I’o,na:yIr‘ad$lrr<l(otp(!Ilnl|
`
`Japan’s Push into
`
`Creative Semiconductor Research:
`3-Dimensional lCs
`
`- Since the early 1980s, Japanese semiconductor companies have made
`a concerted push into creative research programs under the auspices
`of the Japanese government. Dataquest has identified 30 of these iolnt
`R&D projects-—projects that will have a major
`impact on the global semiconductor industry by
`the early 19903 (Table I). They are patterned
`after
`the highly successful VLSI Project of
`1976- 1 980. which was organized by the Japan-
`ese Ministry of international Trade and Industry
`(MITI) to develop the 64K DRAM and photon-
`thography equipment. This month we will exam-
`ine one oi these etiorts——MlT|'s Future Elec-
`tron Devices Project—-which may be consid-
`ered to be Japan's ’ VLSI Project at the 19805"
`
`Agency‘
`MITI
`MITI
`STA
`STA
`MlTl
`MITI
`MITI
`STA
`STA
`STA
`MITI
`N‘I'l'
`STA
`MtTl
`MITI
`MITI
`Tokyo U.
`Kyoto U.
`MtTl
`MtTt
`MPT/MITI
`JIRA
`M PT
`MPTIMiTl
`Tohoku U.
`MlTt
`9 firms
`STA
`
`
`
`ii
`
`Future Electron Devices Project
`In October 1981 , MlTI's Agency for Industrial
`Science and Technology (AIST) organized the
`Future Electron Devices Project
`to develop
`three types oi next-generation devices and in-
`tegrated circults: 3-D lCs,superlat1ice devices,
`and hardened lCs. Budgeted at $114 million,
`the &year project has assigned to it (on a
`rotating basis) 300 corporate researchers from
`14 company members of the Future Electron
`Devices R&D Association, A committee of
`
`university professors advises AlSI on basic
`research goals in 1984, the companies were
`assigned the following research areas
`0 3-D lCs; Matsush ta. Mitsubishi, NEC. Okl,
`Sanyo. Sharp, Toshiba
`0 Superiattices: Fujitsu, Hitachi, Sony.
`Sumitomo Electric
`° Hardened lCs: Hitachi, Toshiba. Mitsubishi
`0 Fab 8i Testing Equipment; Canon, Mitsubishi,
`Seiko Instrument and Electronics
`
`The project is divided into 3 phases:
`Phase 1 (1981—1984)—multitayar structure
`and basic process technology,
`Phase 2 (1985—1987)~—test element and de-
`vice design,
`Phase 3 (198B—1 990)'—functional 3-D ICS
`and system design.
`Currently, hall of the researchers are assigned
`to the 3-D lCs area where MITI believes Japan
`has a twoyear lead. By March 1985. the project
`had generated 373 technical papers (60% in
`3-D lCs) and 282 patents (78% in 3-D iCs).
`
`3-Dimensional lCs
`Three-dimensional lCs are a major attraction
`to Japanese companies because of their poten-
`
`._
`
`tial use in megabit memories, "smart" MPUS
`iMPUs with lasers), high-speed logic. and com-
`plex image sensors with higher densities. faster
`speeds. arid multiple iunctions. MiTI‘s ultimate
`goal is to Create devices having 8 to 9 layers,
`but 4 to 5 layers iriay be more realistic, given in-
`terconnect and neat build-up problems For ex-
`ample, tour 1Mb DR/‘Ms could be stacked to
`develop a lasler 4Mb device than couid be
`realized in a oneievel -win structure.
`
`Project
`
`Optical Measurement and Control Systems
`Fifth Generation Computer
`Perfect GaAs Crystals
`Nanomechanisms
`Scientific Supercomputer
`Future Electron Devices
`Fine Ceramics
`Bioholonics Systems
`Biointormation Transfer
`Speech Synthesis and Recognition
`Advanced Robotics (Jupiter)
`information Network System (INS) Computer
`Solid State Surfaces
`Sigma Automated Software Development
`Biochips/Biocomputer
`i
`Next-Generation iC Equipment
`TRON Project (32-bit MPU)
`Supercomputer (with Matsushita)
`Synchrotron Orbital Radiation (SOR)
`Optoelectronic tCs (OEiCs) for Optocomputars
`Automated Translation Telephone
`Robot Sensors
`High Resolution TV System
`Electronic Dictionary
`Automotive Electronics and Materials
`New Diamond Substrates
`Mirai iC Card Project (1200 users in Tokyo)
`Optical Measurements Technology Development
`Next-Generation Telecommunication Systems
`(solid state power amplifiers & transceivers)
`
`1
`Tabie i—Japan-rise Governirneiit Serniconciucior-Related Joint R8-Ll Frojects‘.
`Budget
`
`(SM)
`Duration
`1979-86
`112.5
`197991
`375.0
`1981-86
`11.0
`198186
`11.0
`1981-90
`143.7
`1981-90
`114.0
`1981-90
`50.0
`1982-87
`10.0
`1983-88
`10.0
`1983-88
`NIA
`1983-90
`125.0
`1984-90
`730.0
`198590
`NIA
`1985-91
`156.3
`1985-90
`40.0
`1985-93
`NIA
`1985-88
`N/A
`1985NIA
`23.5
`1986-96
`93.6
`1986-96
`62.5
`1986-96
`625.0
`1986-88
`N/A
`1986-88
`NIA
`1986-N/A
`1.9
`1986-NIA
`NIA
`1987-NIA
`NiA
`1987-89
`N/A
`1987-92
`26.8
`1987-96
`62.5
`
`1987-98
`
`94.0
`
`MITI/MPT}
`
`NTTIKDDI
`NHKl
`MITI
`
`Optical Materials for High-Output Lasers and
`Optical Fibers
`
`‘MITI = Ministry of international Trade and industry
`MPT = Ministry 01 Posts and Telecommunications
`STA : Science and Technology Agency
`NTI’ = Nippon Telegraph Si Telephone (privatized in 1985)
`JIRA = Japan Industrial Robot Association
`NHK. = Japan Broadcasting Company
`KDD = Kokusai Denshin Dertwa
`
`Source: Dataquest
`
`Solid State Te:hriology.'Marcli1987
`
`SAMSUNG ET AL. EXHIBIT 1053
`
`Page 2 of 3
`
`

`
`What’s
`new in
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`The
`
`Seals square, rectangular, circular and irregular packages to 6.5 inches.
`Higher thruput because of increased sealing speeds.
`99+‘/i yields using SSEC UNILIDS.
`All sealing parameters are programmable by keyboard, sell teaching or
`optional Data Collection/Program Storage Computer.
`Storage of up to 400 sealing programs within the system, unlimited
`storage when used with the optional computer.
`User friendly human interface via keyboard and 40 character alphal
`numeric display.
`Keyboard inside drybox with tactile feedback and spacing optimized
`for use with drybox gloves.
`All drybox system parameters such as moisture level, oxygen level,
`vacuum oven temperature and pressure, etc. are continuously
`monitored by microprocessor with audio and display alarm when
`preset limits are exceeded.
`RS-232-C with all handshaking signals is standard.
`Optional Data Collection/Program Storage Computer for vacuum
`bake/sealing documentation and SECS ll interface.
`Direct digital operation increases reliability due to reduced number of
`electronic and mechanical components required.
`Onboard diagnostics facilitate troubleshooting through keyboard and
`display.
`
`Let .$5EC’s unequaled sealing application experience guide
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`The Model 1000.
`
`Solid State
`Equipxnent Corporation
`1015 Virginia Drive, Fort Washington Industrial Park
`Fort Washington, PA 19034
`(215) 643~7900 TWX: 510-G61-0197
`Fabrication Equipment and Suppliea for the Integrated Circuit Industry
`
`WESTERN OFFICE:
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`Sunnyvale, California
`Telephone: (408) 7325288 TWX: 910-339-9504
`EUROPEAN OFFICE: Konstanz, West Germany
`Telephone: 7531/220-ll Telex: I3 34 ID
`INDIA: SMS Associates, New Delhi - Telephone: 670346
`
`ClfC|e30
`
`Durlng Phase 1, the project explored three;
`basic 3-D process technologies:
`
`(SOI) pre. "
`0 Multilayered silicorron-insulator
`pared using either beam annealed recrystam
`zation (electron and laser beam), or low tem_
`perature epitaxial growth (CVD, MOCVD,
`MBE. and ionized beam deposition)
`0Multilayered processing using
`intralayer
`processes (lithography, etching, doping_ de.
`position. and intraconneclion) as well as out.
`layer processes (planarization, through-hole
`shield layers)
`I Two and three-layer basic device feasibility
`To date, the Future Electron Devices Project
`has achieved moderate success. In 1985, Mit-
`subishi announceda 2-layer 256 X 1-bit SRAM
`and a itoogate array using laser-activated
`polysilicon. Concurrently. NEC fabricated is
`twolayer 53-stage ring oscillator and a 32-bit
`dynamic shilt register using SOI. Sharp, a lead-
`ing optoclectronics vendor, has introduced a
`prototype slevel video signal processor by
`planarizing a poIyimide4ike resin. Matsushila
`has developed a 3—Iayer device leaturing a
`CMOS SRAM, a level detector, and an Brbit
`photosensor Perhaps the most significant de-
`velopment. because ol its potential for dramati-
`Cally increasing density levels to 64Mb and
`beyond. was Toshipa‘s 3«D lC technology for
`luture 4Mb and l6Mb DRAMS.
`At MlTI's annual project symposium in 1985,
`researchers presented a wide variety of
`papers. Some of these addressed Ga.As<)n-lC
`processes, electron beam recrystallized stack-
`ed SOI CMOS devices. etch back planarization_
`and dual
`laser beam irradiation techniques.
`Japanese companies are being encouraged to
`pursue dillerent processes and to develop a
`variety ol 3-D devices.
`Mitsubishi Electric became in industry leader
`in midi 986 when it announced prototype, large
`surface. 30 devices tor 16Mb and larger
`DFlAMs. The devices are processed in laser-
`recrystallized SOI material, Both a three-layer.
`256K SRAM and an image processor were test-
`manutactured using SOI The recrystallization
`process on tour-inch diameter waters was ac-
`complished within 20 minutes. MiiSUb|Si'ii plans
`to use recrystallized SOI on six-inch waters in
`order to develop l6Mb DRAMs and 10,000-gate
`arrays on 10 mm x 9 mm chips.
`
`where are the Japanese Headed?
`Pressured by competition lrom South Korea.
`Taiwan, and other emerging Asian countries.
`Japanese companies are rapidly shilling to cre
`ative research. Mll'l's Future Electron Devices
`Protect shows promise in terms ol making
`signilicant breakthroughs but, as only one proj-
`ect, it represents lust the tip of the iceberg. By
`the late 1980s, we will seea delugeot Japanese
`semiconductor patents and technical papers
`llcywing from the 30 joint Ft&D projects. and this
`will be lollowed, in the 19905, by a variety ol rn~
`novative ICs such as Vld8O RAMs, Al process-
`ors, and speech chips, etc. For US. and Euro-
`pean comparies seeking to be major players in
`the future, the challenge is obvious!
`—Snendan raisuno
`Senior lnduslly Analyst
`
`JspI-.__..
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`SAMSUNG ET AL. EXHIBIT 1053
`
`Page 3 of 3