`
`Application
`Number:
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`12/497,653
`
`iFiling or 371 (c) I 07_04_2009
`3Date:
`
`.
`A 1.
`pp1°a“°“
`
`hammer
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`iGroup Art Unit: 2896
`
`Confirmation
`§Nurnbcr:
`
`4
`69 5
`
`Customer
`Number:
`
`Status:
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`30232
`
`Notice ofAppeal
`Filed
`
`Status Date:
`
`08-17-2013
`
`ELECTRONIC
`
`Location Date:
`
`Earliest
`.
`.
`Publication No: Us
`
`2 l
`—
`1 122 Al
`0 0 0 7
`5
`
`A
`D k
`A
`— mmey 0“ ct 0907043DSCMP.US:
`Number:
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`E 1'
`M 1.65‘.
`Publication Date:
`
`07-08-2010
`
`iClass / Subclass: 257/773
`
`Patent Number:
`
`—
`
`iFirst Named
`Inventor:
`
`Glenn J. Leedy , Parkland, FL
`(US)
`
`Issue Date of
`Patent:
`
`iEntity Status:
`
`Small
`
`AIA (First
`Inventor to File): NO
`
`Title of Invention:
`
`Three dimensional structure memory
`
`RESPONSE
`
`The following Remarks are responsive to the prior Office Action.
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`SAMSUNG ET AL. EXHIBIT 1022
`Page 1 of 3
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`REMARKS
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`The prior Office Action has been carefully considered. Reconsideration in view of the
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`present Remarks is respectfully requested.
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`The undersigned thanks Examincr Joy for courtcsics extended in related application
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`12/497,652 during the interview of 8/29/2013. Identical issues are presented in the present
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`application, with certain relevant features of the claims and the art applied against the claims
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`being the same. In the related application, agreement was reached that the combination of Bcrtin
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`and Kato does not teach a substantially flexible circuit layer as claimed in the independent
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`claims and that the rejection of claims based on the combination of Bertin and Kato would be
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`withdrawn.
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`A explained during the interview, a substantially tlexible semiconductor substrate is at
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`?ic’3(f6.')‘.3?(LZifi7l3°l.1l.Il,(')l'. a .§z{;""ic'.ierzz condition fer a substantially tlexiblte circuit layer: A substanti ally
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`flexible semiconductor sul3st:'ate inay be achieved by grinding until censiderably tliin, fer
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`example to a thickness of less than 59 microns, and polishing the resulting surface. As noted in
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`the rej ectlon, the primary reference Bertin tails to teach polishing.
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`liato teaches grindin the backside of a circuit layer and polishing the resulting, stirface.
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`The seniiconductor substrate itself (part of the circuit layer) niay be argued to be substantially
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`flexible. Hmvever, there is no teacliing or suggestion that the eireariz {rm/»:z' as a whole is
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`SAMSUNG ET AL. EXHIBIT 1022
`Page 2 of 3
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`substantially flexible. Tlie circuit layer may be fabricated in a manner that undoes or defeats
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`flexibility oftlie S€31’I1lCG1‘u'.‘llI.CE01” sti‘cstrate.
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`More particularly, a circuit layer requires one or more dielectric layers. Dielectric
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`niaterial has an asseciatecl level of stress. F01‘ a circuit layer to be substantially flexible,
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`Appli<:a.r1t lias found that the dielectric inattzrial must have low tensile stress, fm‘ exaniple, 5 X 108
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`tlynes/cn't2 ten Ee. l<.a.te times not contain any teaching er suggestien ttfthe circuit layer being
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`0
`.
`E»
`be
`fl exible. Similarly, Bertin does not contain £iT1’y’S'U.Cl1 teachin? or stwvestitin.
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`For these reasons, withdrawal of the rejections is respectfully requested.
`
`Respectfully submitted,
`
`/MichaelJUre/
`
`Michael J. Ure, Reg. 33,089
`
`Dated: 10/24/2013
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`SAMSUNG ET AL. EXHIBIT 1022
`Page 3 of 3