United States Patent [191
`Oh et al.
`
`[54] ROW REDUNDANCY CIRCUIT OF A
`SEMICONDUCI'OR MEMORY DEVICE
`
`[75]
`
`Inventors: Seung-Cheol Oh; Moon-Gone Kim,
`both of Suwon, Rep. of Korea
`
`[73] Assignee: Samsung Electronics Co., Suwon,
`Rep. of Korea
`
`[21] Appl. No.: 91,839
`Jul. 13, 1993
`[22] Filed:
`[30]
`Foreign Application Priority Data
`Ju1. 13, 1992 [KR] Rep. of Korea ......................... 12437
`Int. Q,5 .......................•....................•... G11C 7/00
`[51]
`[52] u.s. a ..................................... 365/200; 371!10.2
`[58] Field of Search ................ 365/200, 225.7, 230.03;
`371/10.1, 10.2
`
`[56]
`
`References Cited
`U.S. PATENT DOCUMENTS
`4,471,472 9/1984 Young ................................. 365/200
`4,885,720 12/1989 Miller et al ......................... 365/200
`5,025,418 6/1991 Asoh ................................... 365/200
`5,060,197 10/1991 Park et al. ........................... 365/200
`5,124,948 6/1992 Takizawa et al ................... 365/200
`
`lllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllllll
`US005355339A
`5,355,339
`[11] Patent Number:
`[45] Date of Patent: Oct. 11, 1994
`
`FOREIGN PATENT DOCUMENTS
`0124299 5/1988 Japan .................................. 371/10.2
`
`OTHER PUBLICATIONS
`B. F. Fitzgerald et al., "Memory System with High-P(cid:173)
`erformance Word Redundancy," IBM Technical Dis(cid:173)
`closure Bulletin, vol. 19, No. 5, Oct. 1976, pp.
`1638-1639.
`Primary Examiner-Eugene R. LaRoche
`Assistant Examiner-Soh Dinh
`Attorney, Agent, or Firm-Cushman, Darby & Cushman
`[57]
`ABSTRACf
`Disclosed is a semiconductor device with redundancy
`for replacing a memory cell with a predetermined de(cid:173)
`fect with additional spare cells. In a semiconductor
`memory device having a plurality of normal submem(cid:173)
`ory arrays, the present invention discloses a redundancy
`technique that allows any redundant address decoder to
`be used with any of the submemory arrays. This maxi(cid:173)
`mizes efficiency in redundant repairs as well as maxi(cid:173)
`mizes the use of the chip area.
`
`11 Oaims, 10 Drawing Sheets
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`

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`U.S. Patent
`
`Oct. 11, 1994
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`Sheet 1 of 10 ·
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`U.S. Patent
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`Oct. 11, 1994
`
`Sheet 2 of 10
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`U.S. Patent
`
`Oct. 11, 1994
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`Sheet 3 of 10
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`5,355,339
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`10
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`
`U.S. Patent
`
`Oct. 11, 1994
`
`Sheet 5 of 10
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`5,355,339
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`MICRON-1010.0006
`
`

`
`U.S. Patent
`
`Oct. 11, 1994
`
`Sheet 6 of 10
`
`5,355,339
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`MICRON-1010.0007
`
`

`
`U.S. Patent
`
`Oct. 11, 1994
`
`Sheet 7 of 10
`
`5,355,339
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`MICRON-1010.0011
`
`

`
`1
`
`5,355,339
`
`2
`are also substituted in each of the submemory arrays).
`Because the probability of a defect in the spare word
`lines increases. Moreover, the number spare word lines
`provided for each submemory cell array is predeter-
`5 mined .and not alterable, which leads to an increase in
`BACKGROUND OF THE INVENTION
`I. Field of the Invention
`the required chip area.
`FIG. 2 shows another example illustrating memory
`The present invention relates to a redundancy circuit
`device using another conventional redundancy tech-
`of a semiconductor memory device and more particu-
`nique. In the FIG. 2 device, the spare word lines pro-
`lady to substituting memory cells having defective
`rows with redundant or spare memory cells.
`10 vided one submemory cell array number less than those
`of FIG. 1, (two rather than four) and a spare decoder
`2. Description of the Related Art
`for driving each spare word line is provided as shown in
`One common technique used to improved the yield of
`the construction of FIG. 2. If one normal word line is
`a particular semiconductor memory fabrication process
`defective in a given submemory array, this defective
`is to "repair" defective memories which result from the
`fabrication process. Repairing cells increases the per- 15 word line is repaired by only one spare word line in that
`centage of usable memories resulting from the repairs
`submemory array. Also, each defective normal word
`and the original fabrication process. Semiconductor
`line causes substitution of only a single word line. This
`memories are commonly fabricated with redundant
`one-to-one repair method is performed by enabling only
`memory cells (generally called spare memory cells) to
`the one spare decoder.
`replace defective memory cells within the same mem- 20
`The system shown in FIG. 2 thus solves the above-
`described problems of all the redundant word lines in
`ory.
`It is known to the public that the redundancy has
`each submemory array being substituted, but it also has
`been proposed to improve the yield of a semiconductor
`problems. Since the number of the spare word lines
`memory device. Here, the term "redundancy" refers to
`provided to one submemory cell array decreases, defect
`a process for replacing a predetermined memory cell 25 cannot be repaired when the number of the defective
`normal word lines in a submemory cell array is greater
`when a defect occurs, therein with redundant memory
`than the number of the spare word lines provided to the
`cells (i.e., commonly designated as spare memory cells).
`For example, in case of a row redundancy, a row ad-
`submemory cell array. Furthermore, one spare decoder
`dress corresponding to the memory cell with the defect
`is decoded and used to remedy the defect in the normal 30 must be provided for each spare word line which in-
`creases the required number of the spare decoders. Thus
`memory cell by means of the additional redundant cells.
`Substituting the redundant row of memory cells for the
`the area occupied by the spare decoders is increased
`row with the defect thus "repairs" the memory device.
`which is not suitable for high packing density.
`Generally, as packing density increases the number of
`FIG. 3 shows a memory device using yet another
`the memory cells increase. Recently, memory cells are 35 conventional technique to solve the above-described
`arranged in a plurality of submemory cell arrays. Usu-
`problems. The redundancy shown in FIG. 3 is referred
`ally, a redundant memory cell array is provided within
`to in Korean Patent Application No. 90-21502 entitled:
`"Redundancy circuit and Method of a Semiconductor
`each such submemory cell array, so that when a defec-
`rive memory cell occurs in one of the submemory cell
`Memo~ Device" filed _by this applicant. The circuit
`arrays, the defective memory cell row in the array is 40 sho_wn _m FIG. ~ contams a redundant cell array 14,
`repaired by means of the redundant row of memory
`which ts used Wlth two normal memory cell arrays 10
`cells.
`and 13, and an isolation gate 12 is installed between the
`In connection with this operation, a block diagram
`two normal memory cell arrays 10 and 13. In the redun-
`illustrating a memory device using such a conventional
`dant operation mode, a redundant sense amplifier 15,
`repair method is shown in FIG. 1. Here, the memory 45 connected redundant memory cell array 14, is operated.
`cell array is formed of four submemory cell arrays
`Thus, regardless of whether the defect occurs in either
`MAO, MAl, MA2 and MA3. The submemory cell ar-
`of the normal memory cell arrays 10 or 13, the defect
`rays respectively have row decoders XO, Xl, X2 and
`can be repaired using only by means of one redundant
`X3, and spare word lines, which are generally referred
`memory cell array 14. Thus, this device desirably de-
`as redundant word lines. Also, spare decoders SDO, 50 creases the required size and/or increases the packing
`SDl, SD2 and SD3 are provided for driving the spare
`density. However, in the device shown in FIG. 3, since
`word lines during the redundancy operation. The num-
`the spare word line and a redundancy decoder circuit
`ber of the spare decoders SDO, SDl, SD2 and SD3 is
`are dependent upon the normal memory cell arrays 10
`the same as the number of the spare word lines within
`and 13, word-line failures can only be repaired by the
`each submemory cell array MAO, MAl, MA2 and 55 associated redundant memory cell array. Because de-
`MA3. The spare decoders SDO, SDl, SD2 and SD3
`fects in the memory cells normally do not uniformly
`receive internal submemory cell array address signal
`appear, but tend to be concentrated in, for instance, a
`ao-an-3and drive the spare word lines by means of their
`single memory array, the fact that the number of repair-
`combination rather than the normal word line. There-
`able cells is restricted by the number of associated re-
`fore, if the defect occurs in the normal word line of the 60 dundant memory cells restricts the improvement of
`submemory cell array MAO, for example, the defective
`redundancy efficiency. Also, while the layout of the
`word line address is programmed in one of the spare
`FIG. 3 design obtains a higher packing density than the
`decoders SDO, SDl, SD2 and SD3. Substituting this
`FIGS. 1 and 2 embodiments, a still higher packing den-
`spare word line for the normal work line thus repairs
`sity is needed for current memory device designs.
`the submemory array.
`However, in the device shown in FIG. 1, four spare
`word lines are substituted for one defective normal
`word lines (i.e., the normal word lines without defects
`
`SUMMARY OF THE INVENTION
`Accordingly, it is an object of the present invention
`to provide a semiconductor memory device having a
`
`ROW REDUNDANCY CIRCUIT OF A
`SEMICONDUCIOR MEMORY DEVICE
`
`65
`
`MICRON-1010.0012
`
`

`
`5,355,339
`
`4
`3
`decoders do not need to be proximate to any particular
`redundant cell array which further enhances high pack-
`memory array, for example. The number of such redun-
`ing density.
`It is yet another object of the present invention to
`dancy decoder circuits can be less than, equal to or
`greater than the number of the normal memory cell
`provide a semiconductor memory device having a re-
`dundancy circuit optimized for the layout of a chip.
`5 arrays. A normal and redundant memory cell array
`It is still another object of the present invention to
`sense amplifier control circuit 201 controls a sense am-
`plifier array 203 provided to the normal and redundant
`provide a semiconductor memory device capable of
`repairing word line failures occurring in different nor-
`memory cell array 200, and allows normal operation
`wherein data access is carried out in the normal mem-
`mal memory cell arrays using spare word lines within
`10 ory cell array during normal operation and the redun-
`one redundant memory cell array.
`It is still another object of the present invention to
`dant data access is used upon enabling (or activation) of
`the redundancy operation. The normal and redundant
`provide a semiconductor memory device capable of
`memory cell array sense amplifier control circuit 201
`repairing many word line failures occurring in a single
`serves as a normal/redundancy selecting circuit, and
`normal memory cell array.
`Spare word lines are provided to a normal and redun- 15 receives a row address and a selection signal REDBLK
`dant memory cell array disposed among a plurality of
`indicative of the particular memory cell array to be
`addressed. If addressed, it outputs a predetermined con-
`normal memory cell arrays. Accordingly, the other
`normal memory cell arrays have no spare word lines.
`trol signal REDBLSi to a sense amplifier array 203. The
`Additionally, the greatest number of redundancy de-
`spare word line driver and redundant block signal gen-
`coder circuits are provided as the chip layout permits. 20 erator 202 contains the spare word line diver circuits
`As a result, when a word line defects occur in any por-
`that drive the spare word lines SWO, SWl, SW2 and
`tion of any of the normal memory cell arrays, the single
`SW3 in accordance with the output signals from the
`normal and redundant memory cell array is used to
`redundancy decoder circuits 211, 212, 213 and 214. The
`repair the defect.
`redundant block signal generator thus generates a
`25 REDBLK signal which indicates whether redundancy
`BRIEF DESCRIPTION OF THE DRAWINGS
`is activated.
`The spare word line driver and redundant block sig-
`The above objects and other advantages of the pres-
`nal generator receive output signals from the redundant
`ent invention will become more apparent by describing
`address decoder circuits (or fuse boxes) 211, 212, 213
`in detail a preferred embodiment thereof with reference
`30 and 214, and then, generate the REDBLK signal a re-
`to the attached drawings in which:
`dundant address is detected on any of the redundant
`FIG. 1 is one example showing a memory device
`address decoders 211-214. It should be noted that out-
`having redundancy according to a conventional tech-
`put signals REDO, ... , RED3 the fuse boxes 211, 212,
`nique;
`213 and 214 are output, when they occur and after
`FIG. 2 is another example showing a memory device
`having redundancy according to a conventional tech- 35 signal conditioning by spare word line driver and re-
`dundant block signal generator 202 along spare work
`nique;
`FIG. 3 is still another example showing a memory
`lines SWO-SW3. Block 202 thus functions as one con-
`device having redundancy according to a conventional
`trol circuit for enabling the redundancy operation. Nor-
`technique;
`mal memory cell array sense amplifier control circuits
`FIG. 4 is a block diagram showing the construction 40 101, 301 and 401 are provided to disable a selected
`of a memory device having redundancy according to
`normal memory cell array when an operation using
`redundancy takes place. Disabling is achieved by the
`the present invention;
`FIG. 5 shows an embodiment of the redundancy
`generation of redundant block selection
`signal
`decoder circuit shown in FIG. 4;
`REDBLK. The spare word lines shown in FIG. 4 as a
`FIG. 6 shows an embodiment of the redundant block 45 representation four (SWO, SWl, SW2 and SW3), may
`be a different number depending on the layout of the
`signal generator shown in FIG. 4;
`FIG. 7 shows an embodiment of the spare word line
`chip.
`driver shown in FIG. 4;
`The operational characteristics of the above-
`described device will now be described. If a memory
`FIG. 8 shows an embodiment of the sense amplifier
`control circuit shown in FIG. 4;
`50 cell failure appears in a specific normal memory cell
`FIG. 9 shows an embodiment of the normal cell array
`array, the redundant cell and spare word lines are uti-
`selecting circuit shown in FIG. 4;
`Iized to repair the failed memory cell. For this opera-
`FIGS. lOA and lOB are timing diagrams illustrating
`tion, the redundancy address decoder circuit is then
`control signals related to the present invention; and
`programmed with an address corresponding to the
`FIGS. 11A to 11C are simplified block diagrams of 55 failed row address (such a process is disclosed in detail
`the present invention illustrating the operation thereof.
`in Korean Patent Application Nos. 91-12919 and
`90-21502 filed by this applicant and expressly incorpo(cid:173)
`DETAILED DESCRIPTION OF THE
`rated by reference). At a subsequent time, in use, when
`PRESENTLY PREFERRED EXEMPLARY
`this address is detected by that redundant address de-
`EMBODIMENTS
`60 coder circuit, the programmed signal thus obtained is
`the output signal REDi (where i=0,1,2,3 ... ) of the
`FIG. 4 is a block diagram illustrating a semiconduc-
`redundancy decoder circuits such as represented by
`tor memory device having redundancy according to the
`211, 212, 213 and 214. The signal REDi is input to the
`present invention. Redundancy decoder circuits (or
`spare word line driver 202. The signal REDi generates
`fuse boxes) 211, 212, 213 and 214 are requisite elements
`for the redundancy. Unlike the conventional tech- 65 a signal REDBLK to disable the normal memory cell
`niques, the redundancy decoder circuits represented by
`array sense amplifier control circuits 101, 301 and 401,
`211, 212, 213 and 214 may be arranged at any location,
`and the dependent row decoders and normal word
`considering the layout of the chip. The redundant row
`lines, thereby inhibiting the normal memory cell arrays
`
`MICRON-1010.0013
`
`

`
`5,355,339
`
`5
`6
`and 214 of FIG. 4, which makes the output signal
`100, 300 and 400 from operating. The signal REDBLK
`REDBLK of the redundant block signal generator
`also enables the normal and redundant memory cell
`shown in FIG. 6 change to logic "high" level. Then, the
`array sense amplifier control circuit 201 to thus operate
`output signal REDBLSi of the normal and redundant
`the redundant memory cell array 200.
`The signal REDi (where i=0,1,2,3) previously input 5 array sense amplifier control circuit shown in FIG. 8 is
`to the spare word line driver 202, drives the spare word
`in logic "high" level, and the output signal <I>BLSi of
`lines upon enabling of word line driver by <I>XO and
`the normal memory cell array sense amplifier control
`input of the word line boosting signals <I>XO and <I>Xl,
`circuit shown in FIG. 9 is changed to logic "low" level.
`Finally, the spare word line is selected. It should be
`which are input to the spare word line driver 202 and
`connected to the word lines as is well known in the art. 10 noted that if the detective address is located within the
`The schematic diagram of the specific circuits consti-
`normal memory array associated with normal and re-
`tuting each block of FIG. 4 will now be described.
`dundant memory cell array 200, that the FIG. lOB oper-
`The embodiment of the redundant address decoder
`ation will occur, whereas if the normal memory array
`circuits (or fuse boxes) 211, 212, 213 and 214 shown in
`associated with normal and redundant memory cell
`FIG. 4 can be formed as shown in FIG. 5. Here, row 15 array 200 is used normally that the FIG. lOA operation
`will occur. In both instances, a sense amplifier array 203
`addresses are input along the address lines illustrated in
`normal use. Earlier in time, the redundant address cir-
`is used.
`c~it, fuses we~e cut prefe~~bly by a laser to cause gener-
`In order to assist in understanding the present in ven-
`atiOn of the stgnal REDt m ~ormal use when the pro-
`tion, the block diagrams of the present invention are
`grammed redundant address ts detected.
`20 marked to illust
`t
`t'
`f th
`t ·
`·
`ra e opera ton o
`e presen mventton
`·
`f h
`ill
`t. e re~undant
`FIG .. 6 ustrates an embodtment 0
`in FIGS. 11A, 11B and 11C. In FIG. 11A, even if four
`word r WLl WL2 WL3
`block stgnal generator of the spare word lme dnver and
`d WL4 ·
`ltan
`1
`s~u eous Y
`redundant block signal generating circuit 202. NOR
`. . mes
`'
`'
`an
`f~ ~one normal memory cell array, the failure correc-
`gate 250 receives each output signal REDO, REDl,
`RED2 and RED3 of the redundancy decoder circuits 25 tlOn 1~ progr~ed by the fuse box~s 1, · · · ' 3 so that
`t~e failed word lmes are replaced wtth the spare word
`211, 212, 213 and 214, which, once inverted by inverter
`~~es f:syvo, ~Wl, SW2 and SW3. In FIG. 11B, one word
`252, produces the redundant block signal REDBLK.
`me . ailure m e~ery normal memory cell arr~y ca~ be
`An embodiment of the spare word line driver shown
`~eparred. Referrmg to FIG. 11C, one.word hne fadure
`in FIG. 4 can be simply formed as shown in FIG. 7. In
`this embodiment, the word line boosting signals <I>XO 30 m a normal memory 7e~l array 1, one m a normal mem-
`ory cell ~rray 2, no fail m a normal memory cell array 3,
`and <I>Xl are instantly connected to the spare word
`lines.
`and two m a no~al memory cell array 4 are all repaired
`by the programmmg of the redundant address decoders.
`The normal and redundant memory cell array sense
`As described above, all of the redundant address decod(cid:173)
`amplifier control circuit 201 of FIG. 4 is illustrated in
`ers can be utilized independently of any particular mem(cid:173)
`further detail in FIG. 8. The normal and redundant 35
`ory cell array, resulting in improved efficiency and
`memory cell array sense amplifier control circuit 201
`yield of the semiconductor memory.
`receives the row addresses and the output signal
`While the present invention has been particularly
`REDBLK from the redundant block signal generator
`shown and described with reference to particular em(cid:173)
`202, thereby controlling the sense amplifier array 203
`bodiments thereof, it will be understood by those skilled
`shown in FIG. 4.
`in the art that various changes in form and details may
`Referring to FIG. 9, an embodiment of the normal
`be effected therein without departing from the spirit
`memory cell array sense amplifier control circuits 101,
`and scope of the invention as defmed by the appended
`301 and 401 are illustrated. The normal memory cell
`claims.
`array sense amplifiers control circuits 101, 301 and 401
`What is claimed is:
`the output signal 45
`the row address and
`receive
`1. A semiconductor memory device disposed on a
`REDBLK from the redundant block signal generator
`semiconductor chip comprising:
`202, thereby controlling the sense amplifiers dependent
`a plurality of memory cell arrays arranged in rows
`upon each normal memory cell array of FIG. 4.
`and columns, each memory cell array containing a
`The timing of each of the signals used to operate the
`plurality of memory cells for storing data and nor(cid:173)
`circuits illustrated in FIGS. 4 to 9 are illustrated in 50
`mally addressable using a normal row address and
`FIGS. lOA and lOB. As shown in FIG. lOA, during the
`a normal column address;
`normal operation of a normal memory array, the output
`a normal row decoder associated with each of said
`signal REDi of the fuse boxes 211, 212, 213 and 214 of
`plurality of memory cell arrays for decoding said
`FIG. 4, previously programmed, is in logic "low" level,
`normal row address to obtain a decoded normal
`and then the output signal REDBLK of the redundant 55
`row address signal corresponding to one of said
`block signal generator 202 of FIG. 6 becomes logic
`rows;
`"low" level. Thus, the output signal REDBLSi of the
`means for selecting one of said rows in said memory
`normal and redundant array sense amplifier control
`array using said decoded normal row address sig(cid:173)
`circuit of FIG. 8 is in logic "low" level, and the output
`signal <I> BLSi of the normal memory cell array sense 60
`nal, said means for selecting including a plurality of
`word lines;
`amplifier control circuit of FIG. 9 is changed to logic
`"high" level. Thereafter, the word line boosting signal
`a plurality of sense amplifier arrays, each sense ampli(cid:173)
`<I> Xi is in logic "high" level to thereby select the normal
`fier array connected to one of said plurality of
`word line.
`memory cell arrays, for sensing said data stored in
`However, during a redundancy operation, as shown 65
`said memory cells;
`in FIG. lOB, the output signal REDi becomes logic
`a redundant memory cell array disposed within one
`"high" level by due to the detected defective address
`of said plurality of memory cell arrays for storing
`among the redundancy decoder circuits 211, 212, 213
`data in a plurality of redundant memory cells, said
`
`40
`
`MICRON-1010.0014
`
`

`
`7
`redundant memory array connected to one of said
`sense amplifier arrays;
`a plurality of redundant row address decoders, each
`redundant row address decoder programmed to
`decode a redundant row address corresponding to 5
`a defective normal memory cell address and which
`outputs a redundant decoded row address signal
`when said redundant row address is decoded;
`redundant means for selecting at least one of said
`rows in said redundant memory array using at least 10
`one of said decoded redundant row address signals,
`said redundant means for selecting including a
`plurality of redundant word lines; and
`a control circuit for inputting each of said redundant
`decoded row address signals and outputting are- 15
`dundancy control signal to each of said normal row
`decoders and each of said sense amplifier arrays.
`2. A semiconductor memory device according to
`claim 1, wherein each of said redundant row decoders
`are arranged on said semiconductor chip in locations 20
`not dependent upon a placement of each of said plural(cid:173)
`ity of memory cell arrays.
`3. A semiconductor memory device according to
`claim 1, wherein said redundant means for selecting
`includes a word line driver for receiving each of said 25
`redundant decoded row address signals and enabling
`respective redundant word lines; and
`wherein said redundancy control signal is generated
`by said control circuit when a redundancy opera(cid:173)
`tion required and disables said normal row decod- 30
`ers during said redundancy operation.
`4. A semiconductor memory device according to
`claim 3 wherein said redundancy control signal is input
`to each of said plurality of sense amplifier arrays so that
`only one of said sense amplifier arrays operates at any 35
`given time.
`5. A semiconductor memory device according to
`claim 4 wherein said one sense amplifier array to which
`said redundant memory array is connected is operated
`during a redundancy operation.
`6. A semiconductor memory device disposed on a
`semiconductor chip comprising:
`a plurality of memory cell arrays;
`a normal row decoder associated with each of said
`plurality of memory cell arrays;
`a plurality of sense amplifier arrays, each sense ampli(cid:173)
`fier array connected to one of said plurality of
`memory cell arrays;
`a redundant memory cell array disposed within one
`of said plurality of memory cell arrays;
`a plurality of redundant row address decoders, each
`redundant row address decoder programmed to
`decode a redundant row address corresponding to
`a defective normal memory cell address and which
`outputs a redundant decoded row address signal 55
`when said redundant row address is decoded;
`redundant means for selecting at least one of said
`rows in said redundant memory array using at least
`one of said redundant decoded row address signals,
`
`40
`
`45
`
`50
`
`60
`
`65
`
`5,355,339
`
`8
`said redundant means for selecting including a
`plurality of redundant word lines; and
`a control circuit for inputting each of said redundant
`decoded row address signals and outputting a re(cid:173)
`dundancy control signal to said one sense amplifier
`array connected to said redundant memory array
`to enable said one sense amplifier array and to each
`of said normal row decoders to disable said normal
`row decoders during a redundancy operation.
`7. A semiconductor memory device according to
`claim 6, wherein each of said redundant row decoders
`are arranged on said semiconductor chip in locations
`not dependent upon a placement of each of said plural(cid:173)
`ity of memory cell arrays.
`8. A semiconductor memory device according to
`claim 6 wherein said redundant means for selecting
`includes a word line driver for receiving each of said
`redundant decoded row address signals and enabling
`respective redundant word lines.
`9. A semiconductor memory device disposed on a
`semiconductor chip comprising:
`a plurality of memory cell arrays;
`a plurality of sense amplifier arrays, each sense ampli(cid:173)
`fier array connected to one of said plurality of
`memory cell arrays;
`a redundant memory cell array;
`a redundant sense amplifier connected to said redun(cid:173)
`dant memory cell array;
`a plurality of redundant row address decoders, each
`redundant row