`
`Sony Corp. v. Raytheon Co.
`IPR2015-01201
`
`
`
`Serial No. 006,120
`
`Art Unit
`
`1107
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`Claims 1-7, 10-18 and Ziffiejected under 35 U.S.C. § 103 as
`being unpatentable over Riseman in combination with Yasumoto.
`
`Riseman teaches a device made by the method comprising the
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`steps of providing a silicon substrate 21, a silicon dioxide
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`etch-stop layer 20 overlying the silicon layer and a single
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`crystal silicon wafer 10 overlying the S102 layer; forming a
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`microelectronic circuit element 13 in the single crystal wafer;
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`etching the silicon substrate 21 with a liquid etchant down to
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`the silicon dioxide layer, and forming an electrical connection
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`27 to the circuit element through the patterned 25 silicon
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`dioxide layer and through the wafer.
`
`see column 4,
`
`line 52 to
`
`column 7,
`
`line 16.
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`However, Riseman does not teach a device made by the method
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`of attaching the front surface of the single crystal wafer to a
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`second substrate containing a second microelectronic circuit
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`element and electrically contacting the first and second circuit
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`elements.
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`Nonetheless, Yasumoto teaches such an embodiment.
`
`See
`
`column 4,
`
`line 56 to column 7,
`
`line 41.
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`It would have been obvious to combine the methods of Riseman
`
`and Yasumoto because the method of Yasumotc would increase
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`circuit density.
`
`Claims 8 and 20 are rejected under 35 U.S.C. § 103 as being
`
`unpatentable over Riseman in combination with Yasumoto as applied
`
`V
`
`RAYOOOOOOS
`
`Raytheon2043-0002
`
`
`
`Serial No. 006,120
`
`Art Unit
`
`1107
`
`to claims 1-7, 10-18 and 21 above, and further in View of
`
`Raschke.
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`Riseman in combination with Yasumoto teaches all the
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`essential elements of claims 8 and 20 except for the steps of
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`placing a layer of epoxy between the single crystal wafer and the
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`second substrate and degassing and curing the epoxy.
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`Nevertheless, Yasumcto teaches that the two circuits are
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`adhered by an adhesive resin.
`
`See column 7,
`
`lines 21-24.
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`In addition, Raschke teaches a method of adhering circuit
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`elements using epoxy resin and degassing the resin.
`
`See column
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`3,
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`lines 38-47.
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`Because the method of Raschke enables the adhesion of
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`circuit elements, it would have been obvious to combine the
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`methods of the applied prior art.
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`claim 9 is rejected under 35 U.S.c.
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`5 103 as being
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`unpatentable over Riseman in combination with Yasumoto as applied
`
`to claims 1-7, 10-18 and 21 above, and further in View of
`
`Stoller.
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`Riseman in combination with Yasumoto teaches all the
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`essential elements of claim 9, except for the step of fixing the
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`second element to an etching support that is resistant to an
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`attack by an etchant.
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`Still, Stoller teaches that such a support 22, 24 enables
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`wafer support during etching.
`
`see column 2,
`
`line 43 to column 3,
`
`§
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`RAYOOOOOOSQ
`
`Raytheon2043-0003
`
`
`
`Serial NO. 006,120
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`Art Unit
`
`1107
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`line 10. Hence it would have been obvious to combine the applied
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`prior art methods.
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`Claim 19 is rejected under 35 U.S.C. S 103 as being
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`unpatentable over Riseman in combination with Yasumoto as applied
`
`to claims 1-7, 10-18 and 21 above, and further in View of
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`applicant's admitted prior art and admissions of non-criticality.
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`Riseman in combination with Yasumoto does not explicitly
`
`teach the specific claimed substrate dimensions.
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`Notwithstanding, applicant teaches that these dimensions are
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`both conventional and non-critical, and that they are simply
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`dictated by design constraints.
`
`See page 7,
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`lines 1-19.
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`Hence, such dimensions would have been obvious;
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`Any inquiry concerning this communication or earlier
`communications from the examiner should be directed to David E.
`Grayhill whose telephone number is (703) 308-2947.
`
`Any inquiry of a general nature or relating to the status of
`this application should be directed to the Group receptionist
`whose telephone number is (703) 308-0661.
`
`PI
`
`DGraybil1:vr
`December 06, 1993
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`%%34.-.
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`(3:53 Ci1:1Jc,‘€'*1._:r;
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`-5
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`RAY000000d0
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`Raytheon2043-0004