EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`References cited herein:
`
`0 U.S. Patent No. 7,147,759 (“‘759 Patent”)
`
`Dischar e in a
`-Current Low-Pressure uasi-Station
`0 D.V. Mozgrin, et al, Hi
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`- A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`[1 pre.] A magnetically
`enhanced sputtering
`Source comprising:
`
`Mozgrin in view of Kudryavtsev
`
`The combination of Mozgrin with Kudryavtsev discloses a
`magnetically enhanced sputtering source.
`Mozgrin 403, right col, 114 (“Regime 2 was characterized by
`intense cathode sputtering. . .”)
`
`Mozgrin at Fig. 1
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`[la.] an anode;
`
`The combination of Mozgrin with Kudryavtsev discloses an
`anode.
`
`ActiVeUS l22249422V.l
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`1
`
`INTEL 1417
`
`INTEL 1417
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`Mozgrin in view of Kudryavtsev
`
`‘759 Patent at Fig. 1
`
`PUL SED
`POWER
`SUPPLY
`
`PRIOR ART
`FIG. 1
`
`‘759 Patent at Fig. 1 (‘‘FIG. 1 illustrates a cross-sectional View of a
`known magnetron sputtering apparatus having a pulsed power
`source.”
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the Vacuum
`chamber 104 proximate to the cathode assembly.”)
`
`Mozgrin at Fig. l
`
`VIIIIIIIIIIIIIIIIIIIIIIIIIIZ
`
`ActiVeUS l22249422V.l
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`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`Mozgrin in view of Kudryavtsev
`
`[1b.] a cathode assembly
`that is positioned
`adjacent to the anode, the
`cathode assembly
`including a sputtering
`target;
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`The combination of Mozgrin with Kudryavtsev discloses a
`cathode assembly that is positioned adjacent to the anode, the
`cathode assembly including a sputtering target.
`.759 Patent at Fig 1
`
`mn
`‘
`
`.
`-
`PULSED
`POWER
`SUPPLY
`
`PRIOR ART
`FIG. 1
`
`‘759 Patent at 3: 10-12 (“FIG. 1 illustrates a cross-sectional View
`of a known magnetron sputtering apparatus having a pulsed power
`source.”
`
`ActiVeUS 122249422V.l
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`‘759 Patent at 3:23-24 (“magnetron sputtering apparatus 100 also
`includes a cathode assembly 114 having a target material 116.”)
`
`Mozgrin at 403, right col, 1] 4 (“Regime 2 was characterized by
`intense cathode sputtering. . .”).
`
`Mozgrin at 403, right col, 1] 4 (“. . .The pulsed deposition rate of
`the cathode material. . .”).
`
`Mozgrin at Fig. 1
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`[lc.] an ionization source
`that generates a weakly-
`ionized plasma proximate
`to the anode and the
`
`cathode assembly;
`
`The combination of Mozgrin with Kudryavtsev discloses an
`ionization source that generates a weakly-ionized plasma
`proximate to the anode and the cathode assembly.
`
`‘759 Patent at 6:30-32 (“The weakly-ionized plasma is also
`referred to as a pre-ionized plasma.”)
`
`‘759 Patent at claim 32 (“wherein the peak plasma density of the
`weakly-ionized plasma is less than about 1012 cm‘3”).
`
`Mozgrin at 401, right col, 112 (“For pre-ionization, we used a
`stationary magnetron discharge; the discharge current ranged up to
`300 mA. . .. We found out that onl
`the re '
`'
`'
`
`ActiVeUS l22249422V.l
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`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`Mozgrin in view of Kudryavtsev
`
`field strength not lower than 400 G provided the initial plasma
`density in the 109 — 10” cm'3 range.”). (emphasis added).
`
`(“The [plasma] discharge had an
`Mozgrin at 401, left col, 1] l
`armular shape and was adjacent to the cathode.”). (emphasis
`added)
`
`Mozgrin at 402, right col, 112 (“Figure 3 shows typical Voltage and
`current oscillograms.. .. Part I in the voltage oscillogram
`represents the Voltage of the stationary discharge (pre-ionization
`stage).”).
`
`Mozgrin at Fig. 6
`
`Fig. 6. High-current quasi-stationary discharge regimes. (a) planar magnetron: (I) high-current magnetron regime (p = S X [0 3'
`Ar. Id = 70 A. U4 = 900 V); (2) high-current diffuse regime (p = 10'' torr. Ar. I4 = 700 A. Ud = 80 V); (3) are regime (p = 10"
`Ar, Id = l00O A, U‘, = 45 V). (b) Shaped-electrode system: (I) high-current diffuse regime (p = 104 torr, Ar. Id = 1000 A. U‘, = 90
`(2) contracted arc regime (p = I0 ' torr. Ar. Id = I500 A. Ud= 50 V).
`
`
`
`The combination of Mozgrin with Kudryavtsev discloses a magnet
`[ld.] a magnet that is
`that is positioned to generate a magnetic field proximate to the
`positioned to generate a
`magnetic field proximate weakly-ionized plasma, the magnetic field substantially trapping
`to the weakly-ionized
`electrons in the weakly-ionized plasma proximate to the sputtering
`plasma, the magnetic
`target.
`field substantially
`
`‘759 Patent at 3: 10-12 “FIG. 1 shows a cross-sectional View of a
`
`ActiVeUS l22249422V.l
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`

`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`trapping electrons in the
`weakly-ionized plasma
`proximate to the
`Sputtering target; and
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`known magnetron sputtering apparatus 100. . .” that has a magnet
`126.”)
`
`‘759 Patent at 4:4-l0 [describing theprior art Fig. I] (“The
`electrons, which cause ionization, are generally confined by the
`magnetic fields produced by the magnet 126. The magnetic
`confinement is strongest in a confinement region 142. . _.”)
`
`Mozgrin at 401, left col, 1] l (“The electrodes were immersed in a
`magnetic field of armular permanent magnets.”).
`
`Mozgrin at 401, right col, 112 (“We found out that only the regimes
`with magnetic field strength not lower than 400 G provided the
`initial plasma density in the 109-10“ cm'3 range.”).
`
`Mozgrin at 407, left col, 1] 3 (“The action of the magnetic field
`serves only to limit the electron thermal conductivity and to
`provide collisions sufficient for efficient energy transfer fiom
`electrons to heavy particles.”).
`
`Mozgrin at Fig. 1
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`[le.] a ower su l
`
`The combination of Mozrin with Ku avtsev discloses a ower
`
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`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`supply generating a Voltage pulse that produces an electric field
`between the cathode assembly and the anode, the power supply
`being configured to generate the Voltage pulse with an amplitude
`and a rise time that increases an excitation rate of ground state
`atoms that are present in the weakly-ionized plasma to create a
`multi-step ionization process that generates a strongly-ionized
`plasma, which comprises ions that sputter target material, fiom the
`weakly-ionized plasma, the multi-step ionization process
`comprising exciting the ground state atoms to generate excited
`atoms, and then ionizing the excited atoms within the weakly-
`ionized plasma without forming an arc discharge.
`
`‘759 Patent, claim 33 (“wherein the peak plasma density
`strongly-ionized plasma is greater than about 1012 cm'3”)
`
`of the
`
`Mozgrin at Fig. 1
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`Mozgrin at Fig. 2
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`generating a Voltage
`pulse that produces an
`electric field between the
`
`cathode assembly and the
`anode, the power supply
`being configured to
`generate the Voltage
`pulse with an amplitude
`and a rise time that
`
`increases an excitation
`
`rate of ground state
`atoms that are present in
`the weakly-ionized
`plasma to create a multi-
`step ionization process
`that generates a strongly-
`ionized plasma, which
`comprises ions that
`sputter target material,
`from the weakly-ionized
`plasma, the multi-step
`ionization process
`comprising exciting the
`ground state atoms to
`generate excited atoms,
`and then ionizing the
`excited atoms within the
`
`weakly-ionized plasma
`without forming an arc
`discharge.
`
`ActiVeUS l22249422V.l
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`

`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`High-vollag
`supply unit
`
`C
`
`supply unit
`
`Fig. 2. Discharge supply unit.
`
`Mozgrin at Fig. 3
`
`(a)
`
`1
`
`2a 2b
`
`3
`
`Fig. 3. Oscillograms of (a) current and (b) voltage of the
`quasi-stalionary discharge (50 ps pcr div.. 180 A per div.,
`180 V per div.).
`
`Mozgrin at 402, right col, 1] 2 (“Part 1 in the Voltage oscillogram
`represents the Voltage of the stationary discharge (pre-ionization
`Stage)-”)
`
`Mozgrin at 401, right col, 1] 1 (“Thus, the supply unit was made
`providing square Voltage and current pulses with [rise] times
`(leading edge) of 5 — 60 us. . .”).
`
`Mozgrin 403, right col, 1]4 (“Regime 2 was characterized by
`intense cathode sputtering. . .”) (emphasis added).
`
`Mozgrin at 409, left col, 1]5 (“The high-current diffuse discharge
`(regime 3) is useful for producing large-Volume uniform dense
`plasmas n,-2 1.5x1015cm'3. . .”)
`
`Mozgrin at 401, 1] sparming left and right columns (“Designing the
`[pulsed supply] unit, we took into account the dependences which
`had been obtained in [Ku avtsev] of ionization relaxation on
`
`ActiVeUS l22249422V.l
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`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`pre-ionization parameters, pressure, and pulse voltage
`amplitude.”)
`
`Mozgrin at 400, left col, 1] 3 (“Some experiments on magnetron
`systems of various geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high currents.”)
`
`Mozgrin at 400, right col, 1] 1 (“A fiirther increase in the discharge
`currents caused the discharges to transit to the arc regimes. . .”).
`
`Mozgrin at 401, right col, 112 (“For pre-ionization
`plasma density in the 109 — 10” cm'3 range.”)
`
`the initial
`
`Mozgrin at 404, left col, 1] 3 (“The parameters of the shaped-
`electrode discharge. . .transit to arc regime 4, could be well
`determined... The point of the planar-magnetron discharge transit
`to the arc regime was determined by discharge voltage and
`structure changes...”).
`
`Mozgrin at 404, left col, 1] 4 (“If the current was raised above 1.8
`kA or the pulse duration was increase to 2 — 10 ms, an instability
`development and discharge contraction was observed.”).
`
`Mozgrin at 409, left col, 1] 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering
`plasma
`density (exceeding 2x1013 cm'3).”).
`
`Mozgrin at Fig. 4
`
`U, V
`500
`
`400
`
`300
`
`200
`
`100
`
`0
`
`0.1
`
`10
`
`LA
`
`100
`
`1000
`
`Fig. 4. Current-voltage characteristic of the quasi-stationary
`discharge with shaped electrodes in argon, p = 0.1 ton; B =
`0.4 kG.
`
`Mozgrin at Fig. 7
`
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`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Claims 1-3, 5-10, 13-16,
`
`Mozgrin in view of Kudryavtsev
`
`18-20, 22-34, 37, 40-43
`
`U, V
`500- 1000
`
`and 45-46, 48, 50
`
`15 - 225
`
`1000 -1800 1,?
`
`Fig. 7. Generalized ampere-voltaic characteristic CVC of
`quasi-stationary discharge.
`
`Kudryavtsev at 34, right col, 1] 4 (“Since the effects studied in this
`work are characteristic of ionization whenever a field is suddenly
`applied to a weakly ionized gas, they must be allowed for when
`studying emission mechanisms in pulsed gas lasers, gas
`breakdown, laser sparks, etc.”)
`
`Kudryavtsev at Fig. 1
`
`CI):
`vr,
`
`FIG. 1. Dlngrmn showing the rclatlvc sizes nf I:
`fluxes In terms of the atomic energy level: for
`and fast 0:) stages. The width of the armwl ind
`magnitude nfthu clcclmu flux. T11: lmrlmntal
`the diffusion fluxes nf electrons and excited arc
`the walls of the discharge tube.
`
`
`
`Kudryavtsev at Fig. 6
`
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`10
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`.9
`
`75
`
`27
`
`27
`
`.13’
`
`.79
`
`1/5
`
`E/n, , Td
`1) neg/111 =
`FIG. 6. The behavior of us in the bulk of an argon discharge.
`10'”: 2) 10‘1. Stepwise ionization predominates in region 1, direct ioniza-
`tion processes predominate in region I1, and nc does not increase in region
`11!.
`
`Kudryavtsev at 31, right col, 1] 7 (“The behavior of the increase in
`n, with time thus enables us to arbitrarily divide the ionization
`process into two stages, which we will call the slow and fast
`growth stages. Fig. 1 illustrates the relationships between the
`main electron currents in terms of the atomic energy levels during
`the slow and fast stages.”).
`
`Kudryavtsev at 31, right col, 1] 6 (“For nearly stationary n2 [excited
`atom density] values
`there is an explosive increase in ne
`[plasma density]. The subsequent increase in ne then reaches its
`maximum value, equal to the rate of excitation [equation omitted],
`which is several orders of magnitude greater than the ionization
`rate during the initial stage.”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma
`at moderate pressures... [i]t is shown that the electron density
`increases explosively in time due to accumulation of atoms in the
`lowest excited states.”)
`
`One of ordinary skill would have been motivated to use
`Kudryavtsev’s fast stage of ionization in Mozgrin so as to increase
`plasma density and thereby increase the sputtering rate. Further,
`use of Kudryavtsev’s fast stage in Mozgrin would have been a
`combination of old elements that in which each element performed
`as expected to yield predictable results of increasing plasma
`density and multi-step ionization.
`
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`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`2. The sputtering source
`of claim 1 wherein the
`power supply generates a
`constant power.
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`The combination of Mozgrin with Kudryavtsev discloses the
`power supply generates a constant power.
`
`See evidence cited in claim 1.
`
`‘759 Patent at Fig. 5
`
`’759 Patent, 11:48-50 (“Between time t1 and time t2, the Voltage
`326, the current 328, and the power 326 remain constant. . .”).
`
`Mozgrin Fig. 3 shows constant power in region 3
`
`Fig. 3. Oscillogmmu of (21) cunenl and (h) voltage of the
`quasi-sumonnry discharge (50 '1.» per diva IR!) A per dI‘v,.
`l8U V per dIV J,
`
`3. The sputtering source
`of claim 1 wherein the
`power supply generates a
`constant Voltage.
`
`The combination of Mozgrin with Kudryavtsev discloses the
`power supply generates a constant Voltage.
`
`See evidence cited in claim 1.
`
`Mozgrin at Fig. 3
`
`__ L._l___4: mm.
`1
`2:: 2h
`3
`
`Fig. 3. Oscillugmms of (a) current and (h) voltage of Ill:
`quasi-smlionnry dischnrgc (50 w; pcr div/., I80 A pct dim.
`I80 V per dw.),
`
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`
`

`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`5. The sputtering source
`of claim 1 wherein the
`electric field comprises a
`.
`pulsed electnc field‘
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`The combination of Mozgrin with Kudryavtsev discloses the
`electric field comprises a pulsed electric field.
`
`'
`'
`'
`1
`'
`See evidence cited in c a1m
`Mozgrin at Fig. l
`
`1.
`
`(a)
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped—clectrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`Mozgrin, at 403 -404, right col, last paragraph of 403, left col, first
`paragraph of 404 (“. . .The current pulse
`repetition frequency
`was 10 Hz...”).
`
`Mozgrin at Fig. 3
`
`_l_4j_tj4m_m—.
`2:: 2b
`3
`
`I
`
`Fig. 3. Oscillugrums of (a) current and (b) voltage of the
`quasi-stationary discharge (50 use per div., 180 A per div..
`I80 V pct div.],
`
`6. The sputtering source
`of claim 1 wherein the
`rise time of the Voltage
`
`The combination of Mozgrin with Kudryavtsev discloses the rise
`time of the Voltage pulse is chosen to increase the ionization rate
`of the excited atoms in the weakly-ionized plasma.
`
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`13
`
`

`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`pulse is chosen to
`increase the ionization
`
`rate of the excited atoms
`
`in the weakly-ionized
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`See evidence cited in claim 1.
`
`Mozgrin at 401, right col, 1] l (“[t]he power supply was able to
`deliver square voltage and current pulses with [rise] times (leading
`edge) of5 — 60 us ....”).
`
`Kudryavtsev at Fig. 1
`
`plasma.
`
`n
`
`]]n.
`
`]:> ‘I
`
`V”
`
`I’?-I-‘h““
`
`2-
`
`r
`
`K4
`,7
`— —;\
`rff)
`vc
`
`1r
`\
`v];
`r
`/ \
`I‘?!
`\~..
`/
`
`EC>
`
`]
`
`]7t:1[jr.1nI shuwlng lhc rclatlvs: sizes: of
`I“l(?. 1.
`(I! n-rm: of the atomic unurgy lcwl: In
`l1m<r~.:
`and fan (hi stages. The width of the arrow: (1
`rnngnlnurle of the uluctron flux.
`‘l'I1u lmrlmm
`[hr dlffustnn fluxus of ulucxrons and uxcltud n
`the walls nf (hr dlsclmrgc nibc.
`
`rm
`
`of claim 1 wherein the
`
`weakly-ionized plasma
`reduces the probability of
`developing an electrical
`breakdown condition
`
`between the anode and
`
`the cathode assembly.
`
`8. The sputtering source
`of claim 1 wherein the
`
`ions in the strongly-
`ionized plasma impact
`the surface of the
`
`sputtering target in a
`manner that causes
`
`substantially uniform
`erosion of the sputtering
`target.
`
` 7. The sputtering source
`
`The combination of Mozgrin with Kudryavtsev discloses the
`weakly-ionized plasma reduces the probability of developing an
`electrical breakdown condition between the anode and the cathode
`
`assembly.
`
`See evidence cited in claim 1.
`
`Mozgrin at 406, right col, 1]3 (“pre-ionization was not necessary;
`however, in this case, the probability of discharge transferring to
`arc mode increased.”)
`
`The combination of Mozgrin with Kudryavtsev discloses the ions
`in the strongly-ionized plasma impact the surface of the sputtering
`target in a manner that causes substantially uniform erosion of the
`sputtering target.
`
`See evidence cited in claim 1.
`
`Mozgrin at Fig. l
`
`Mozgrin, at 403, left col, last 1] (“. . .being transferred to the high-
`current regime, the discharge expands over a considerably larger
`area of the cathode surface than it occupied in the stationary pre-
`ionization regime.”).
`
`Mozgrin at 404, left col, 1] 4 (“. . .the discharge plasma and current
`area were seen to expand and cover the whole cathode surface
`(Fig 6)-”)
`
`One of ordinary skill would understand that expanding the plasma
`increases its uniformity. One of ordinary skill in the art would
`understand that the n lasma dischar e coverin; a lar er area of the
`
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`
`14
`
`

`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`9. The sputtering source
`of claim 1 wherein the
`
`strongly-ionized plasma
`is substantially uniform
`proximate to the
`sputtering target.
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`cathode surface during sputtering would impact the surface of the
`sputtering target in a substantially uniform manner and lead to a
`substantially more uniform erosion of the sputtering target
`
`Mozgrin at Fig. l
`
`Mozgrin, at 403, left col, last 1] (“. . .being transferred to the high-
`current regime, the discharge expands over a considerably larger
`area of the cathode surface than it occupied in the stationary pre-
`ionization regime.”).
`
`Mozgrin at 404, left col, 1] 4 (“. . .the discharge plasma and current
`area were seen to expand and cover the whole cathode surface
`(Fig 6)-”)
`
`One of ordinary skill would understand that expanding the plasma
`increases its uniformity. One of ordinary skill in the art would
`understand that the plasma discharge covering a larger area of the
`cathode surface during sputtering would impact the surface of the
`sputtering target in a substantially uniform manner and lead to a
`substantially more uniform erosion of the sputtering target
`
`10. The sputtering source
`of claim 1 further
`
`The combination of Mozgrin with Kudryavtsev discloses a
`substrate support that is positioned in a path of the sputtering flux.
`
`comprising a substrate
`support that is positioned
`in a path of the sputtering
`flux.
`
`13. The sputtering source
`of claim 1 wherein a
`
`volume between the
`
`anode and the cathode
`
`assembly is chosen to
`increase the ionization
`
`See evidence cited in claim 1.
`
`‘759 Patent at 3: 10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100. . .”)
`
`‘759 Patent at 3:44-46 (“substrate 134 is positioned in the vacuum
`chamber 104 on a substrate support 135 to receive the sputtered
`target material 1 16.”)
`
`Mozgrin, at 403, right col, 1] 4 (“To study sputtering, we used a
`probecollector placed 120 mm fiom the cathode. The pulsed
`deposition rate of cathode material (copper was used) turned out to
`be about 80 um/min. . .”).
`
`The combination of Mozgrin with Kudryavtsev discloses a volume
`between the anode and the cathode assembly is chosen to increase
`the ionization rate of the excited atoms in the weakly-ionized
`plasma.
`
`See evidence cited in claim 1.
`
`rate of the excited atoms
`
`See evidence cited in claim 6.
`
`in the weakly-ionized
`
`Moz rin’s exeriments were conducted in actual ma netrons with
`
`ActiVeUS l22249422V.l
`
`15
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`an actual volume between the anode and the cathode. Mozgrin’s
`ionization rate of excited atoms increased within that volume.
`
`Moreover, if one of ordinary skill building a system according to
`Mozgrin did not experience Kudryavtsev’s “explosive increase” in
`plasma density, it would have been obvious to incorporate
`Kudryavtsev’s fast stage into Mozgrin so as to increase plasma
`density and thereby increase the sputtering rate. Further, use of
`Kudryavtsev’s fast stage in Mozgrin would have been a
`combination of old elements that yielded predictable results to
`increase plasma density and multi-step ionization.
`
`14. The sputtering source
`of claim 1 wherein the
`
`The combination of Mozgrin with Kudryavtsev discloses the
`ionization source comprises an electrode.
`
`ionization source
`
`comprises an electrode.
`
`See evidence cited in claim 1.
`
`Mozgrin at Fig. l
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`15. The sputtering source
`of claim 1 wherein the
`
`ionization source
`
`comrises a DC
`
`The combination of Mozgrin with Kudryavtsev discloses the
`ionization source comprises a DC power supply that generates an
`electric field proximate to the anode and the cathode assembly.
`
`ActiveUS l22249422v.l
`
`16
`
`

`
`Claims 1_3, 5_10, 13_16,
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`supply that generates an
`electric field proximate
`to the anode and the
`
`cathode assembly.
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`See evidence cited in claim 1.
`
`Mozgrin at Fig. 2
`
`High-vollag
`supply unit
`
`C
`
`-3‘
`
`'3
`
`ary
`supply mm
`
`Fig. 2. Discharge supply unit.
`
`Mozgrin at 401, left col, 1] 5 (“. . .The pre-ionization system
`provided direct current up to O.3A and Voltage up to 3 kV.”)
`
`Mozgrin at Fig. l
`
`s\"
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(h)
`shaped-electrode configuration.
`(I) Cathode;
`(2) anode; (3) magnetic system.
`
`Mozgrin at Fig. 3
`
`ActiveUS l22249422v.l
`
`17
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Claims 1-3, 5-10, 13-16,
`
`Mozgrin in view of Kudryavtsev
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
` __mm__
`I
`241
`2!:
`3
`
`Fig. 3. Oscillograms of (a) current and (b) voltage of the
`quasi-stationary discharge (50 us per div., 180 A per div.,
`
`I80 V pcr div.].
`
`
`
`
`
`16. The sputtering source The combination of Mozgrin with Kudryavtsev discloses the
`of claim 1 wherein the
`ionization source comprises an AC power supply that generates an
`
`ionization source
`electric field proximate to the anode and the cathode assembly.
`
`comprises an AC power
`
`See evidence cited in claim 1.
`supply that generates an
`electric field ptexjmate
`to the anede and the
`eathede assembly
`
`
`
`
`
`
`Mozgrin at 401, left col, 1] 4 (“The pre-ionization could be
`provided by RF discharge. . .”).
`
`Mozgrin at Fig. l
`
`
`‘759 Patent at 4:52-54 (“In one embodiment, the bias Voltage
`source 214 is an alternating current (AC) power source, such as a
`radio frequency (RF) power source.”)
`
`
`
`
`
`
`
`
`ActiveUS l22249422v.l
`
`1 8
`
`
`
`VIIIIIIIIIIIIIIIIIIIIIIIIIIZ
`
`
`
`
`
`
`
`
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(I) Cathode;
`(2) anode; (3) magnetic system.
`
`18. The sputtering source
`of claim 1 wherein the
`
`The combination of Mozgrin with Kudryavtsev discloses the
`magnet comprises an electro-magnet.
`
`magnet comprises an
`electro-magnet.
`
`See evidence cited in claim 1.
`
`Mozgrin at 401, left col, 1] 2 (“The system with shaped electrodes
`involved two axisymmetrical electrodes 120 mm in diameter
`separated by about 10 mm, and immersed in a cusp-shaped
`magnetic field produced by oppositely directed multilayer coils.
`The values of Bmax were controlled by coil current variation to
`range from 0 to 1000 G.”).
`
`Mozgrin at Fig. l
`
`ActiveUS l22249422v.l
`
`19
`
`

`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`19. The sputtering source
`of claim 1 wherein the
`
`sputtering target is
`formed of a material
`
`chosen from the group
`comprising a metallic
`material, a polymer
`material, a
`superconductive material,
`a magnetic material, a
`non-magnetic material, a
`conductive material, a
`non-conductive material,
`a composite material, a
`reactive material, and a
`refractory material.
`
`[20pre.] A method of
`generating sputtering
`flux, the method
`comprising:
`
`[20a.] ionizing a feed gas
`to generate a weakly-
`ionized plasma proximate
`to a sputtering target;
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(b)
`shaped-electrode configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`The combination of Mozgrin with Kudryavtsev discloses the
`sputtering target is formed of a material chosen from the group
`comprising a metallic material, a polymer material, a
`superconductive material, a magnetic material, a non-magnetic
`material, a conductive material, a non-conductive material, a
`composite material, a reactive material, and a refractory material.
`
`See evidence cited in claim 1.
`
`Mozgrin at 401, left col, 1] 1, (“The cathodes we used were made
`of Cu, Mo, Ti, Al, or stainless steel.”).
`
`The combination of Mozgrin with Kudryavtsev discloses a method
`of generating sputtering flux.
`
`See evidence cited in limitation [1 pre] of claim 1.
`
`Mozgrin at 403, right col, 1] 4 (“Regime 2 was characterized by
`intense cathode sputtering. . .”).
`
`The combination of Mozgrin with Kudryavtsev discloses ionizing
`a feed gas to generate a weakly-ionized plasma proximate to a
`sputtering target.
`
`See evidence cited in limitation [lc] of claim 1.
`
`‘759 Patent at 6:30-32 (“The weakly-ionized plasma is also
`referred to as a pre-ionized plasma.”)
`
`‘759 Patent at claim 32 (“wherein the peak plasma density of the
`weakly-ionized plasma is less than about 1012 cm‘3”)
`
`Mozgrin at Fig. 2
`
`ActiveUS l22249422v.l
`
`20
`
`

`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`current oscillograms.. .. Part I in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”)
`
`Mozgrin at 401, right col, 112 (“[t]or pre-ionization, we used a
`stationary magnetron discharge; ... provided the initial plasma
`density in the 109 — 10“ cm‘3 range.”)
`
`Mozgrin at 400, right col, 1] 3 (“We investigated the discharge
`regimes in various gas mixtures at 10'3 — 10 torr. . .”)
`
`Mozgrin at 402, 1] sparming left and right cols (“We studied the
`high-current discharge in wide ranges of discharge current. . .and
`operating pressure. . .using various gases (Ar, N2, SF6, and H2) or
`their mixtures of various composition. . .”)
`
`Mozgrin at 403, right col, 1] 4 (“Regime 2 was characterized by
`intense cathode sputtering. . .”).
`
`The combination of Mozgrin with Kudryavtsev discloses
`generating a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping electrons in the
`weakly-ionized plasma proximate to the sputtering target.
`
`‘759 Patent at 3: 10-12 (“Fig. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100. . .”)
`
`‘759 Patent at 4:4-10 (“The electrons, which cause ionization, are
`generally confined by the magnetic fields produced by the magnet
`126. The magnetic confinement is strongest in a confinement
`region 142...”)
`
`Mozgrin at 401, left col, 1] 1 (“The electrodes were immersed in a
`magnetic field of annular permanent magnets.”)
`
`Mozgrin at 401, right col, 112 (“We found out that only the regimes
`with magnetic field strength not lower than 400 G provided the
`initial plasma density in the 109-10“ cm'3 range.”)
`
`Mozgrin at 407, left col, 1] 3 (“The action of the magnetic field
`serves only to limit the electron thermal conductivity and to
`provide collisions sufficient for efficient energy transfer fiom
`electrons to heavy particles.”)
`
`[20b.] generating a
`magnetic field proximate
`to the weakly-ionized
`plasma, the magnetic
`field substantially
`trapping electrons in the
`weakly-ionized plasma
`proximate to the
`sputtering target; and
`
`[20c.] applying a voltage
`pulse to the weakly-
`ionized plasma, an
`am litude and a rise time
`
`The combination of Mozgrin with Kudryavtsev discloses applying
`a voltage pulse to the weakly-ionized plasma, an amplitude and a
`rise time of the voltage pulse being chosen to increase an
`excitation rate of round state atoms that are resent in the
`
`ActiVeUS l22249422V.l
`
`21
`
`

`
`Claims 1-3, 5-10, 13-16,
`
`18-20, 22-34, 37, 40-43
`
`and 45-46, 48, 50
`
`of the Voltage pulse being
`chosen to increase an
`
`excitation rate of ground
`state atoms that are
`
`present in the weakly-
`ionized plasma to create
`a multi-step ionization
`process that generates a
`strongly-ionized plasma,
`which comprises ions
`that sputter target
`material, from the
`weakly-ionized plasma,
`the multi-step ionization
`process comprising
`exciting the ground state
`atoms to generate excited
`atoms, and then ionizing
`the excited atoms within
`
`the weakly-ionized
`plasma without forming
`an arc discharge.
`
`EXHIBIT A.01
`
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev
`
`weakly-ionized plasma to create a multi-step ionization process
`that generates a strongly-ionized plasma, which comprises ions
`that sputter target material, from the weakly-ionized plasma, the
`multi-step ionization process comprising exciting the ground state
`atoms to generate excited atoms, and then ionizing the excited
`atoms within the weakly-ionized plasma without forming an arc
`discharge.
`
`‘759 Patent, claim 33 (“wherein the peak plasma density of the
`strongly-ionized plasma is greater than about 1012 cm'3”)
`
`Mozgrin at Figs. 1, 2, 3
`
`Mozgrin at 402, right col, 1] 2 (“Part 1 in the Voltage oscillogram
`represents the Voltage of the stationary discharge (pre-ionization
`stage).”)
`
`Mozgrin at 401, right col, 1] 1 (‘‘Thus, the supply unit was made
`providing square Voltage and current pulses with [rise] times
`(leading edge) of 5 — 60 us. . .”)
`
`Mozgrin at 401, right col, 1]2 (“For pre-ionization
`plasma density in the 109 — 10“ cm'3 range.”)
`
`the initial
`
`Mozgrin at 409, left col, 1] 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering
`plasma
`density (exceeding 2xl013 cm‘3).”)
`
`Mozgrin at 403, right col, 1]4 (“Regime 2 was characterized by
`intense cathode sputtering. . .”)
`
`Mozgrin at 401, 1] sparming left and right columns (“Designing the
`[pulsed supply] unit, we took into account the dependences which
`had been obtained in [Kudryavtsev] of ionization relaxation on
`pre-ionization parameters, pressure, and pulse Voltage
`amplitude.”)
`
`Mozgrin at 400, left col, 1] 3 (“Some experiments on magnetron
`systems of Various geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high currents.”)
`
`Mozgrin at 404, left col, 1] 3 (“The parameters of the shaped-
`electrode discharge. . .transit to arc regime 4, could be well
`determined... The point of the planar-magnetron discharge transit