USOO7923311B2
`
`(12) United States Patent
`(10) Patent No.:
`US 7,923,311 B2
`
`Zhang et al.
`(45) Date of Patent:
`*Apr. 12, 2011
`
`(54) ELECTRO-OPTICAL DEVICE AND THIN
`FILM TRANSISTOR AND METHOD FOR
`FORMING THE SAME
`
`(75)
`
`Inventors: Hongyong Zhang;Yamato (JP); Naoto
`Kusumoto; Atsugi (JP)
`
`(73) Assignee: Semiconductor Energy Laboratory
`Co., Ltd.; Atsugi-shi; Kanagawa-ken
`(JP)
`
`( * ) Notice:
`
`Subject to any disclaimer; the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 541 days.
`
`This patent is subject to a terminal dis-
`claimer.
`
`(21) Appl.No.: 11/898,833
`
`(22)
`
`Filed:
`
`Sep. 17, 2007
`
`(65)
`
`Prior Publication Data
`
`US 2008/0044962 A1
`
`Feb. 21; 2008
`
`Related US. Application Data
`
`(60) Division of application No. 10/925,984, filed on Aug.
`26; 2004; now Pat. No. 7,507,991; which is a division
`of application No. 10/140,176, filed on May 8; 2002;
`now Pat. No. 6,847,064; which is a division of
`application No. 10/011,708, filed on Dec. 11; 2001;
`now Pat. No. 6,797,548; which is a division of
`application No. 09/291,279; filed on Apr. 14; 1999;
`now Pat. No. 6,335,213; which is a division of
`application No. 09/045,696; filed on Mar. 23; 1998;
`now Pat. No. 6,124,155; which is a division of
`application No. 08/455,067; filed on May 31; 1995;
`now Pat. No. 5,811,328; which is a division of
`application No. 08/260,751; filed on Jun. 15; 1994;
`now Pat. No. 5,648,662; which is a continuation of
`application No. 07/895,029; filed on Jun. 8; 1992; now
`abandoned.
`
`(30)
`
`Foreign Application Priority Data
`
`(51)
`
`Int. Cl.
`(2006.01)
`H01L 21/02
`(52) US. Cl.
`........ 438/151; 438/152; 438/156; 438/166;
`257/E21.133; 257/E21.413; 257/E21.414;
`257/E29.151; 257/E29.294
`(58) Field of Classification Search .......... 438/1507166;
`257/E21.133; 413; 414; E27.111; E29.151;
`257/278; 294
`See application file for complete search history.
`
`(56)
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`
`3,484,662 A
`
`12/1969 Hagon
`(Continued)
`
`EP
`
`FOREIGN PATENT DOCUMENTS
`0 341003
`11/1989
`
`(Continued)
`OTHER PUBLICATIONS
`
`Semiconductor Energy Laboratory Co, Ltd’s Motion for Summary
`Judgment on its Claim of Infringement 0f the ‘480 Patent and on
`Defendants’ Inequitable Conduct, Laches, License, and Patent Mis-
`use Affirmative Defenses dated Mar. 19, 2007.
`
`(Continued)
`
`Primary Examiner 7 Michael S Lebentritt
`(74) Attorney, Agent, or Firm 7 Eric J. Robinson; Robinson
`Intellectual Property Law Ofiice; PC.
`
`ABSTRACT
`(57)
`A semiconductor device having a pair of impurity doped
`second semiconductor layers; formed on a first semiconduc-
`tor layer having a channel formation region therein; an outer
`edge of the first semiconductor film being at least partly
`coextensive with an outer edge of the impurity doped second
`semiconductor layers. The semiconductor device further
`includes source and drain electrodes formed on the pair of
`impurity doped second semiconductor layers; wherein the
`pair of impurity doped second semiconductor layers extend
`beyond inner sides edges ofthe source and drain electrodes so
`that a stepped portion is formed from an upper surface of the
`source and drain electrodes to a surface of the first semicon-
`ductor film.
`
`Jun. 19; 1991
`
`(JP) ....................................... 3-174541
`
`54 Claims, 8 Drawing Sheets
`
`
`
`Exhibit 1001, page 1
`
`Exhibit 1001, page 1
`
`

`

`US 7,923,311 B2
`
`Page2
`
`U.S. PATENT DOCUMENTS
`4,368,523 A
`149% Kawate
`4,376,672 A
`“983 Wang “A
`4,472,240 A
`9/1984 Kameyama
`4,514,253 A
`“985 Mmezakl
`2522:1232 A
`13813:; fiflderetfl
`4,601,097 A
`7/1986 813$;ng
`4,619,034 A
`10/1986 Janning
`4,624,737 A
`11/1986 Shimbo
`4,651,408 A
`3/1987 MacElwee et 31.
`4,654,295 A
`3/1987 Yangetal.
`4,663,494 A
`5/1987 Kishietal.
`4,693,960 A
`9/1987 Babichetal.
`4,746,628 A
`5/1988 Takafujietal.
`4,778,773 A
`10/1988 Sukegawa
`4788157 A
`11/1988 Nakamura
`4,797,108 A
`“1989 mether
`4803536 A
`2/1989 Tuan
`4,838,654 A
`6/1989 Hamaguchietal.
`4,851,363 A
`7/1989 Troxe“ et 31'
`4,857,907 A
`8/1989 Koden
`4,862,234 A
`8/1989 KOden
`4,864,376 A
`9/1989 Aoki etal.
`4,902,638 A
`“990 Mum
`4,930,874 A
`6/1990 Mitsumune et al.
`4,933,296 A
`6/1990 Parksetal.
`4,938,565 A
`7/1990 IChikawa
`4,948,231 A
`8/1990 Aoki etal.
`2’323’%5§ A
`31338 8211:2353“ 31'
`4,960,719 A
`10/1990 Tanaka etal.
`/1990 Aoki
`1333123:
`12/1991 Bate et 31
`5003356 A
`3/1991 WakZi et a1
`,
`,
`.
`~
`28%;? A
`$331 P13313133
`5,032,883 A
`7/1991 Wakaietal.
`5040 875 A
`8/1991 Noguchi
`5,041,888 A
`8/1991 Possin etal
`5,051,800 A
`9,1991 Shojietal.
`5,055,899 A
`10/1991 Walmi et a1.
`5,062,690 A
`“/1991 Whefien
`5,063,378 A
`11/1991 Roach
`5,070,379 A
`12/1991 Nomoto et al.
`5,071,779 A
`12/1991 Tanakaetal.
`5,091,337 A
`2/1992 Watanabe etal.
`5,124,769 A
`6/1992 Tanakaetal.
`5,132,820 A
`7/1992 Someyaetal.
`5,141,885 A
`8/1992 Yoshidaetal.
`5,147,826 A
`9/1992 Liu etal.
`5,153,702 A
`10/1992 Aoyama etal.
`5,153,754 A
`10/1992 Whetten
`5,157,470 A
`10/1992 Matsuzaki etal.
`5,165,075 A
`11/1992 Hirokietal.
`5,166,085 A
`11/1992 Wakaietal.
`5,166,757 A
`11/1992 Kitamura etal.
`5,170,244 A
`12/1992 Dohjo etal.
`5,173,753 A
`12/1992 Wu
`5,191,451 A
`3/1993 Katayamaetal.
`5,198,379 A
`3/1993 Adan
`5,198,694 A
`3/1993 Kwasnick etal.
`5,200,846 A
`4/1993 Hirokietal.
`5,200,847 A
`4/1993 Mawatarietal.
`5,208,476 A
`5/1993 Inoue
`5,229,644 A
`7/1993 Wakaietal.
`5,270,567 A
`12/1993 Morietal.
`5,275,851 A
`1/1994 Fonash etal.
`5,294,811 A
`3/1994 Aoyama
`5,306,651 A
`4/1994 Masumo
`5,311,041 A
`5/1994 Tominagaetal.
`5,313,077 A
`5/1994 Yamazaki
`5,315,132 A
`5/1994 Yamazaki
`5,327,001 A
`7/1994 Wakaietal.
`5,359,206 A
`10/1994 Yamamoto etal.
`5,366,912 A
`11/1994 Kobayashi
`5,366,926 A
`11/1994 Mei et 31.
`5,403,762 A
`4/1995 Takemura
`5,403,772 A
`4/1995 Zhang etal.
`
`,1
`
`5,420,048 A
`2’3§§’?2§§
`5,474,945 A
`5,485,019 A
`5,493,129 A
`5,501,989 A
`5,530,265 A
`5,532,850 A
`3328838 A
`5,572,046 A
`5’595’923 A
`5’610’737 A
`5’648’662 A
`5’656’511 A
`5’705’829 A
`’
`’
`5,712,495 A
`5,767,930 A
`3’311333 A
`5:821:565 A
`5,834,071 A
`5 834 345 A
`5’849’611 A
`5,859,443 A
`5888839 A
`5’889’290 A
`5,943,593 A
`6’020’223 A
`6,077,731 A *
`8188888 A
`’
`’
`6,226,060 B1*
`6’335’213 B1
`6,346,730 131*
`6,509,217 131*
`333833,; E:
`’
`’
`6’847’064 BZ
`6,979,840 B1
`2002/0042171 A1
`2002/0127785 A1
`
`'
`
`5/ 1995 KOHdO
`13/1332 VKVEWA 6111
`12/1995 Yamazaki etal.
`1/1996 Yamazaki etal.
`2/1996 Matsuzaki etal.
`3/1996 Takayamaetal.
`6/1996 Takemura
`7/1996 Someyagtal.
`188888 3311;221:131
`11/1996 Takemura '
`1/1997 Zhan 6131
`3,1997 Akiyinaef 31
`7,1997 Zhanget 31
`8,1997 Shindo
`'
`1/1998 M-
`131
`
`'
`Wang“
`1/1998 Suzawa.._. ..................... 257/49
`6/1998 Kobayashletal.
`88883 38:28:23;
`10/1998 Matsuzaki ettal.
`11,1998 Lin
`11/1998 Shimizu
`1
`12,1998 Y
`316 t
`1/1999 Yflzaki 2121
`3/1999 Ino et a1
`'
`'
`3,1999 Kim
`chi etal
`8/1999 N0
`'
`2,2000 Mefital
`6/2000 Yamazaki etal.
`138888 éfiflg 6:3
`- ge
`'
`................ 349/43
`5/2001 On1sawaetal.
`“2002 21mg etal.
`2/2002 K1takad0 etal. .............. 257/350
`1/2003 Reddy ........................... 438/153
`8888: xmefi'
`“’3 et
`'
`“2005 Zhang etal.
`12/2005 Yamazak1etal.
`4/2002 Zhang etal.
`9/2002 Zhang etal.
`
`............ 438/150
`
`EP
`EP
`EP
`EP
`GB
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`
`FOREIGN PATENT DOCUMENTS
`0347178
`12/1989
`0416 798 A2
`3/1991
`0419160
`3/1991
`0456199
`11/1991
`2185622
`7/1987
`58-002073
`1/1983
`58-222533
`12/1983
`59-163871
`9/1984
`60-224270
`11/1985
`60-245124
`12/1985
`60245172
`12/1985
`61-093488
`5/1986
`61-139069
`6/1986
`61263273
`11/1986
`62-030379
`2/1987
`62-104171
`5/1987
`62-148928
`7/1987
`62-171160
`7/1987
`62-299081
`12/1987
`63-000164
`1/1988
`63-046776
`2/1988
`61-232483
`4/1988
`63-086573
`4/1988
`63168052
`7/1988
`63-224258
`9/1988
`63-237577
`10/1988
`63-289965
`11/1988
`64045162
`2/1989
`64-068726
`3/1989
`64-068967
`3/1989
`01-091467
`4/1989
`64-091120
`4/1989
`01-114080
`5/1989
`01-117067
`5/1989
`
`Exhlblt 1001, page 2
`
`.............. 257/66
`
`Exhibit 1001, page 2
`
`

`

`US 7,923,311 B2
`
`Page 3
`
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`
`01-144682
`01-157520
`01-180523
`01-155025
`02-001824
`02-001947
`02-008369
`02-027320
`02-033934
`02-152251
`02-157824
`02-177443
`02-203567
`02-208635
`02-210420
`02-222545
`02-223912
`02-224221
`02-234124
`02-234125
`02-250037
`02-260460
`02-268468
`02-272774
`02-281238
`02-310932
`03-091932
`03-116778
`03-138980
`03-201538
`04-360580
`06-267978
`06-267979
`06-267988
`06-275806
`06-275807
`
`6/1989
`6/1989
`7/1989
`10/1989
`1/1990
`1/1990
`1/1990
`1/1990
`2/1990
`6/1990
`6/1990
`7/1990
`8/1990
`8/1990
`8/1990
`9/1990
`9/1990
`9/1990
`9/1990
`9/1990
`10/1990
`10/1990
`11/1990
`11/1990
`11/1990
`12/1990
`4/1991
`5/1991
`6/1991
`9/1991
`12/1992
`9/1994
`9/1994
`9/1994
`9/1994
`9/1994
`
`OTHER PUBLICATIONS
`
`Declaration of Stanley A. Schlitter in Support of Semiconductor
`Energy Laboratory Co., Ltd’s Motion for Summary Judgment
`(Exhibit 1, 5-21) dated Mar. 19, 2007.
`Defendants’ Motion for Summary Judgment of (A) Non-Infringe-
`ment and Invalidity of the ’258 Patent; (B) Non-Infringement and
`Invalidity of the ’995 Patent; and (C) No Liability for Foreign Sales
`and/or Sales to Authorized Licensees dated Mar. 19, 2007.
`Declaration of Robert W. Unikel in Support of Defendants’ Motion
`for Summary Judgment of (A) Non-Infringement and Invalidity of
`the ’258 Patent; (B) Non-Infringement and Invalidity of the ’995
`Patent; and (C) No Liability for Foreign Sales and/or Sales to Autho-
`rized Licensees (Exhibit 2-17) dated Mar. 19, 2007.
`Semiconductor Energy Laboratory Co. Ltd’s Memorandum of
`Points andAuthorities in Opposition to Defendants’ Motion for Sum-
`mary Judgment dated Apr. 16, 2007.
`Declaration of Stanley A. Schlitter in Support of Semiconductor
`Energy Laboratory Co., Ltd’s Opposition to Defendants’ Motion for
`Summary Judgment (Exhibit 2, 3, 6, 9, 10, 13, 77) dated Apr. 16,
`2007.
`Defendants’ Opposition to Semiconductor Energy Laboratory Co.,
`Ltd’s Motion for Summary Judgment on its Claim of Infringement
`of the ’480 Patent and on Defendants’ Inequitable Conduct, Laches,
`License, and Patent Misuse Affirmative Defenses dated Apr. 16,
`2007.
`Declaration of Robert W. Unikel in Support of Defendants’ Opposi-
`tion to Semiconductor Energy Laboratory Co., Ltd’s Motion for
`Summary Judgment on its Claim of Infringement of the ’480 Patent
`and on Defendants’ Inequitable Conduct, Laches, License, and
`Patent Misuse Affirmative Defenses (Exhibit 2, 8-14) dated Apr. 16,
`2007.
`Semiconductor Energy Laboratory Co., Ltd. ’s Reply in Support of its
`Motion for Summary Judgement on its Claim of Infringement of the
`’480 Patent and on Defendants’
`Inequitable Conduct, Laches,
`License, and Patent Misuse Affirmative Defenses dated Apr. 30,
`2007.
`Declaration of Stanley A. Schlitter in Support of Semiconductor
`Energy Laboratory Co., Ltd’s Reply in Support of its Motion for
`Summary Judgment (Exhibit 1-3) dated Apr. 30, 2007.
`
`Defendants’ Reply Memorandum in Support of its Motion for Sum-
`mary Judgment of (A) Non-Infringement and Invalidity of the ’258
`Patent; (B) Non-Infringement and Invalidity of the ’995 Patent; and
`(C) No Liability for Foreign Sales and/or Sales to Authorized Lic-
`ensees dated Apr. 30, 2007.
`Declaration of Ryan E. Lindsey in Support of Defendants’ Reply
`Memorandum in Support ofits Motion for Summary Judgment of(A)
`Non-Infringement and Invalidity of the ’258 Patent; (B) Non-In-
`fringement and Invalidity ofthe ’995 Patent; and (C) No Liability for
`Foreign Sales and/or Sales to Authorized Licensees (Exhibit A-G)
`dated Apr. 30, 2007.
`Joint Motion Requesting Court to Vacate Order on Summary Judg-
`ment of (I) Invalidity ofU.S. Patent No. 6,756,258 as to Obviousness
`and (II) Infringement of US. Patetnt No. 6,404,480 dated Jul. 5,
`2007.
`Rule 41 Stipulation of Dismissal dated Jul. 6, 2007.
`Order Granting Joint Motion Requesting Court to Vacate Order on
`Summary Judgment of(I) Invalidity ofU.S. Patent No. 6,756,258 as
`to Obviousness and (II) Infringement of US. Patent No. 6,404,480
`dated Jul. 6, 2007.
`Defendant Chi Mei Optoelectronics Corp.’s Notice of Motion and
`Motion for Clarification of the Court’s Claim Construction Order
`Regarding US. Patent Nos. 6,404,480 and 6,756,258; Memorandum
`of Points and Authorities in Support Thereof dated Jun. 9, 2006,
`Semiconductor Energy Laboratory Co., Ltd.
`v. Chi Mei
`Optoelectronics Corp., et al., No. C 04-04675 MHP, 9 pages.
`Plaintiff Semiconductor Energy Laboratory Co. Ltd.’ s Memorandum
`of Points and Authorities in Support of Its Opposition to CMO’s
`Motion for Clarification of the Court’s Claim Construction Order
`dated Jun. 26, 2006, Semiconductor Energy Laboratory Co., Ltd. v.
`Chi Mei Optoelectronics Corp., et al.
`, No. C 04-04675 MHP, 10
`pages.
`Defendant Chi Mei Optoelectronics Corp.’s Reply Memorandum in
`Support of Its Motion for Clarification dated Jun. 29, 2006, Semicon—
`ductor Energy Laboratory Co., Ltd v. Chi Mei Optoelectronics
`Corp., et al., No. C 04-04675 MHP, 8 pages.
`Memorandum & Order Re: Motion for Clarification dated Jul. 28,
`2006, Semiconductor Energy Laboratory Co., Ltd. v. Chi Mei
`Optoelectronics Corp., et al., No. C 04-04675 MHP, 3 pages.
`Memorandum & Order, Claim Construction, Mar. 24, 2006, US.
`District Court, Northern District of California, Semiconductor
`Energy Laboratory Co., Ltd v. Chi Mei Optoelectronics Corp., et al.,
`No. C 04-04675 MHP.
`Stipulation of Dismissal of SEL’s Claims Against Proview and
`Proview’s Claims Against SEL dated Feb. 2, 2007.
`Order (Proview Dismissal) dated Feb. 7, 2007.
`Stipulation ofDismissal of SEL’ s Claims Against all Defendents, and
`Defendants’ Claims Against SEL dated Apr. 27, 2007.
`[Proposed] Order (All Defendants Dismissal) dated Apr. 27, 2007.
`Order (All Defendants Dismissal) dated Apr. 30, 2007.
`Plaintiff’ s Original Complaint, Filed May 5, 2006, US. District
`Court, Eastern District of Texas, Marshall Division, Semiconductor
`Energy Laboratory Co., Ltd, v. HannStar Display Corp. et al., Case
`No. 2-06CV—190.
`Defendant’s Final Invalidity Contentions and Accompanying Docu-
`ment Production dated Aug. 28, 2006.
`Miyata et al., “Two-Mask Step-Inverted Staggered ot-Si TFT-Ad-
`dressed LCD’s,” SID International Symposium Digest of Technical
`Papers, pp. 155-158, May 1989.
`Yo shida et al ., “A 9-in. Multicolor LCD Addressed by ot-Si TFTs with
`High-Field-Effect Mobilities,” SID International Symposium Digest
`of Technical Papers, pp. 242-246, May 1988.
`Castleberry et al., “A 1 Mega-Pixel Color ot-Si TFT Liquid-Crystal
`Display,” SID International Symposium Digest of Technical Papers,
`pp. 232-234, May 1988.
`Peter Van Zant, “Microchip Fabrication: A Practical Guide to Semi-
`conductor Processing” (McGraW-Hill, 2"d ed. 1990).
`Kern & Decked, “Thin Film Processes” (Academic Press 1978).
`Brian Chapman, “Glow Discharge Processes,” (John Wiley & Sons
`1980), p. 299.
`Maissel & Glang, “Handbook of Thin Film Technology,” pp. 7-44
`(McGraW-Hill 1983).
`
`Exhibit 1001, page 3
`
`Exhibit 1001, page 3
`
`

`

`US 7,923,311 B2
`
`Page 4
`
`C. Adams and A. Capio, “Edge Profiles in the Plasma Etching of
`Polycrystalline Silicon,” J. Electrochem. Soc.: Solid-State Science
`and Tech., Feb. 1981, pp. 366-370.
`Y. Asai et al., “A 6.7-in. Square High-Resolution Full-Color TFT-
`LCD,” Japan Display 1989, pp. 514-517.
`A. Bell and D. Hess, “Fundamentals and Applications of Plasma
`Chemistry for IC Fabrication,” The Electrochemical Society, May 12,
`1985.
`D. Castleberry et al., “a-Si Addressed Liquid Crystal Aircraft Dis-
`play,” American Inst. ofAeronautics and Astronautics, Inc., 1984, pp.
`296-300.
`T. Chikamura et al., “The Characteristics ofAmorphous Silicon TFT
`and Its Application in Liquid Crystal Display,” Mat. Res. Coc. Symp.
`Proc., vol. 95, 1987, pp. 421-430.
`J. Coburn and H. Winters, “Plasma etchingiA Discussion of
`Mechanisms,” J. Vac. Sci. Tech., 16(2), Mar/Apr. 1979, pp. 391-403.
`M. Dohjo et al., “Low Resistance Mo-Ta Gate-Line Material for
`Large-Area a-Si TFT-LCDs,” Proceedings of the SID, vol. 29/4,
`1988, pp. 330-332.
`I. Haller et al., “Selective Wet and Dry Etching of Hydrogenated
`Amorphous Silicon and Related Materials,” J. Electrochem. Soc.:
`Solid-State Science and Tech., Aug. 1988, pp. 2042-2045.
`H. Hayama and M. Matsumura, “Amorphous-Silicon Thin-Film
`Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett. 36(9),
`May 1, 1980, pp. 754-755.
`W. Howard, “Active-Matrix Techniques for Displays,” Proceedings
`ofthe SID, vol. 27/4, 1986, pp. 313-326.
`N. Ibaraki, “Active Matrix Crystal Manufacturing Process,” Nikkei
`Business Publications, Inc., pp. 146-155.
`K. Ichiawa, “14.3-in-Diagonal 16-Color TFT-LCD Panel Using
`(x-SizH TFTs,” SID Digest 1989, pp. 226-229.
`M. Ikeda et al., “Low Resistance Copper Address Line for TFT
`LCD,” Japan Display, 1989, pp. 498-501.
`Y. Kaneko et al., “Analysis and Design of ot-Si TFT/LCD Panels with
`a Pixel Model,” IEEE Transactions on Electron Devices, vol. 36, No.
`12, Dec. 1989, pp. 2953-2958.
`Y. Lee, “Reactive Ion Etching,” Mar. 10, 1983.
`H. Lehmann & R. Widmer, “Dry Etching for Pattern Transfer,” J. Vac.
`Sci. Tech., 17(5), Sep./Oct. 1980, pp. 1177-1183.
`J.
`R. Light,
`“Reactive
`Ion Etching of Aluminum/Silicon,”
`Electrochem. Soc.: Solid-State Science and Tech., Nov. 1983, pp.
`2225-2230.
`M. Matsumura, Amorphous Silicon Transistors and Integrated Cir-
`cuits,: Proceedings of the 14th Conference on Solid State Devices,
`Tokyo, 1982, pp. 487-491.
`H. Mattausch et al., “Reactive Ion Etching ofTa-Silicide/Polysilicon
`Double Layers for the Fabrication of Integrated Circuits,” J. Vac. Sci.
`Tech, B1(1), Jan-Mar. 1983, pp. 15-22.
`M. Mieth andA. Barker, “Anisotropic Plasma Etching of Polysilicon
`Using SF6 and CFC13,” J. Vac. Sci. Tech., A1(2), Apr.-Jun. 1983, pp.
`629-635.
`H. Moriyama et al., “A 12-in. Full-Color Ot-SIZH TFT-LCD With
`Pixel Electrode Buried in Gate Insulator,” Proceedings of the SID,
`vol. 31/1, 1990, pp. 13-17.
`Y. Nara and M. Matsumura, “Experimental Study of Amorphous
`Silicon Integrated Circuit,” Proceedings of the 13th Conference on
`Solid State Devices, Tokyo, 1982, pp. 257-261.
`T. Nomoto et al., “A 9-in. Diagonal Full Color LCD Using T2-Gate
`Electrode ot-Si TFT,” Japan Display 1989, pp. 502-505.
`Y Oana et al. “A 9.5-inch Diagonal Multicolor Amorphous Silicon
`TFT-LCD Panel,” 1985 Int’l Display Research Conference.
`Y Oana, “Technical Developments and Trends in ot-Si TFT-LCDs, ”
`Journal ofNon-Crystalline Solids 115, 1989, pp. 27-32.
`P. Parrens, “Anisotropic and Selective Reactive Ion Etching of
`Polysilicon Using SF6,” J.Vac. Sci. Tech., 19(4), Nov/Dec. 1981, pp.
`1403-1407.
`M. Powell and J. Orton, “Characteristics ofAmorphous Silicon Stag-
`gered-Electrode Thin-Film Transistors,” Appl. Phys. Lett. 45(2), Jul.
`15, 1984, pp. 171-173.
`J. Pankove, “Semiconductors and Semimetals,” Academic Press
`1984, vol. 21, Part D, pp. 89-114.
`
`A. Snell et al., “Application ofAmorphous Silicon Field Effect Tran-
`sistors in Addressable Liquid Crystal Display Panels,” App. Phys. 24,
`1981, pp. 357-362.
`V. Dorfman, “The Use of Selective-Etching and Masking Principles
`in Integrated-Circuit Manufacture,” Soviet Microelectronics, vol. 5,
`No. 2, Mar/Apr. 1976, pp. 81-101.
`E. Takeda, “An Amorphous Si TFT Array with Tan/SiNx Double
`Layered Insulator for Liquid Crystal Displays,” 1988 Int’l Display
`Research Conf., pp. 155-158.
`M. Takeda, “12.5-in. LCD Addressed by ot-Si TFTs Employing
`Redundancy Technology,” Japan Display 1986, pp. 204-207.
`M. Thompson, “A Comparison of Amorphous and Poly Crystalline
`TFTs for LC Displays,” Journal of Non-Crystalline Solids 137 and
`138, 1991, pp. 1209-1214.
`S. Uchikoga et al., Soda Lime Glass as a Substrate for TFT-LCDs,
`Japan Display, 1989.
`J. Vossen et al., “Processes for Multilevel Metallization,” J. Vac. Sci.
`Tech., vol. 11, No. 1, Jan/Feb. 1974, pp. 60-70.
`M. Yamano and H. Takesada, Full Color Liquid Crystal Television
`Addressed by Amorphous Silicon TFTs, Journal of Non-Crystalline
`Solids 77 and 78, 1985, pp. 1383-1388.
`M. Yuki et al., A Full Color LCD Addressed by Poly Si TFTs Fabri-
`cated at Low Temperature Below 450° C, 1988 Int’l Display
`Research Conference, pp. 220-221.
`C. Zarowin and R. Horwath, “Control of Plasma Etch Profiles with
`Plasma Sheath Electric Field and RF Power Density,” J. Electrochem.
`Soc.: Solid-State Science and Tech., Nov. 1982, pp. 2241-2247.
`M. Zhang et al., “Reactive Ion Etching for Submicron Structures of
`Refractory Metal Silicides and Polysilicides,” J. Vac. Sci. Tech.,
`B1(4), Oct-Dec. 1983, pp. 1037-1042.
`Complaint for Patent Infringement, and Demand for Jury Trial, Semi-
`conductor Energy Laboratory Co., Ltd., Plaintiff vs. Chi Mei
`Optoelectronics Corp., International Display Technology Co., Ltd.,
`International Display Technology USA, Inc., Westinghouse Digital
`Electronics, LLC and CTX Technology Corp., Defendants dated
`Nov. 3, 2004.
`Defendant Chi Mei Optoelectronics Corp.’ s Answer to Compliant for
`Patent Infringement, Demand for Jury Trial, and Counterclaim dated
`Feb. 28, 2005.
`Defendant Westinghouse Digital Electronics, LLC’s Answer to
`Complaint for Patent Infringement dated Feb. 28, 2005.
`Defendant International Display Technology Co., Ltd’s Answer to
`Complaint for Patent Infringement dated Feb. 28, 2005.
`Defendant International Display Technology USA, Inc.’s Answer to
`Complaint for Patent Infringement dated Feb. 28, 2005.
`Defendant Chi Mei Optoelectronics Corp.’s Responses to Plaintiff
`Semiconductor Energy Laboratory Co., Ltd’s First Set of Interroga-
`tories dated Apr. 4, 2005.
`Expert Report of Dr. Jerzy Kanicki and accompanying documents
`dated Oct. 15, 2006.
`Expert Report of the Honorable Gerald J. Mossinghoff and accom-
`panying documents dated Oct. 16, 2006.
`Expert Report of Professor Martin Adelman and accompanying
`documents dated Nov. 14, 2006.
`Rebuttal Expert Witness Report of Michael Thomas, Ph. D. and
`accompanying documents dated Nov. 14, 2006.
`Defendant Chi Mei Optoelectronics Corp.’s Notice of Motion and
`Motion for Summary Judgment of Non-Infringement and Invalidity
`ofClaims 3-6, 10-13 and 18-21 ofU.S. Patent No. 6,756,258 dated
`Nov. 14, 2006.
`Defendant Chi Mei Optoelectronics Corp.’s First Amended Answer
`to Complaint for Patent Infringement, Demand for Jury Trial, Coun-
`terclaim, and Certification of Interested Parties dated Nov. 9, 2006.
`Semiconductor Energy Laboratory Co. Ltd’s Opposition to CMO’s
`Motion for Summary Judgment of Non-Infringement and Invalidity
`ofClaims 3-6, 10-13, 18-21 ofU.S. Patent No. 6,756,258 dated Jan.
`9, 2007.
`Declaration of Stanley A. Schlitter in Support of Semiconductor
`Energy Laboratory Co. Ltd’s Opposition to CMO’s Motion for
`Summary Judgment of Non-Infringement and Invalidity of Claims
`3-6, 10-13, 18-21 ofU.S. Patent No. 6,756,258 dated Jan. 9, 2007.
`Declaration of Michael Thomas, Ph. D. in support of Semiconductor
`Energy Laboratory Co. Ltd’s Opposition to CMO’s Motion for
`
`Exhibit 1001, page 4
`
`Exhibit 1001, page 4
`
`

`

`US 7,923,311 B2
`
`Page 5
`
`Summary Judgment of Non-Infringement and Invalidity of Claims
`3-6, 10-13, 18-21 ofU.S. Patent No. 6,756,258 dated Jan. 9, 2007.
`Chi Mei Optoelectronics Corp.’s Reply in Support of its Motion for
`Summary Judgment of Non-Infringement and Invalidity of Claims
`3-6, 10-13 and 18-21 of US. Patent No. 6,756,258 dated Jan. 18,
`2007.
`Declaration of Frank P. Cote in Support of CMO’s Reply in Support
`ofits Motion for Summary Judgment of US. Patent No. 6,756,258
`dated Jan. 18, 2007.
`Memorandum & Order Re: Defendants’ Motion for Summary Judg-
`ment dated Apr. 17, 2007.
`Memorandum & Order Re: Motions for Summary Judgment dated
`Jun. 19, 2007.
`Inoue et al., “Low Temperature CMOS Self-Aligning Poly-Si TFTs
`and Circuit Scheme Utilizing New Ion Doping and Masking Tech-
`nique,” Seiko Epson Corporation, TFT Research Laboratory, Aug.
`12, 1991, pp. 555-558.
`Kawachi et al., “Large-Area Doping Process for Fabrication of Poly-
`Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer
`Laser Annealing,” Japanese Journal of Applied Physics, vol. 29, No.
`12, Dec. 1990, pp. L2370-2372.
`Hayzelden et al., “In Situ Transmission Electron Microscopy Studies
`of Silicide-Mediated Crystallization of Amorphous Silicon,” Appl.
`Phys. Lett., vol. 60, No. 2, Jan. 13, 1992, pp. 225-227.
`Hempel et al., “Needle-Like Crystallization ofNi DopedAmorphous
`Silicon Thin Films,” Solid State Communications, vol. 85, No. 11,
`Mar. 1993, pp. 921-924.
`Dvurechenskii et al., “Transport Phenomena in Amorphous Silicon
`Doped by Ion Implantation of 3d Metals,” Phys. Stat. Sol. (a), vol. 95,
`(1986), pp. 635-640.
`Wolf et al., “Silicon Processing for the VLSI Era vol. 1: Process
`Technology,” © 1986, pp. 179.
`Wolf et al., “Silicon Processing for the VLSI Era vol. 2: Process
`Integration,” © 1990, pp. 260-273.
`Defendant’ s Preliminary Proposed Claim Constructions and Prelimi-
`nary Identification of Extrinsic Evidence Pursuant to Patent L.R. 4-2
`dated Jul. 22, 2005, including Exhibits A-L attached thereto.
`Semiconductor Energy Laboratory Co., Ltd’s Proposed Preliminary
`Claim Construction and Extrinsic Evidence dated Jul. 22, 2005.
`Semiconductor Energy Laboratory Co. Ltd’s Patent L.R. 4-2(b)
`Disclosure dated Jul. 22, 2005 including documents bates numbered
`as SEL-CMO 89041-89049.
`Joint Claim Construction and Prehearing Statement dated Aug. 5,
`2005.
`Semiconductor Energy Laboratory Co., Ltd’s Opening Brief on
`Claim Construction and Supporting Evidence dated Sep. 20, 2005.
`Declaration of Donald R. Harris in Support of Semiconductor Energy
`Laboratory Co., Ltd’s Opening Brief on Claim Construction dated
`Sep. 20, 2005 including Exhibits 1-12.
`Defendants’ Claim Construction Response Brief dated Oct. 4, 2005.
`Declaration of Scott R. Mosko in Support of Defendants’ Claim
`Construction Response Brief dated Oct. 4, 2005 including Exhibits
`A-X.
`Semiconductor Energy Laboratory Co., Ltd’s Reply Brief on Claim
`Construction and Supporting Evidence dated Oct. 11, 2005.
`
`Declaration ofDonald R. Harris in Support of Semiconductor Energy
`Laboratory Co., Ltd. ’s Reply Brief on Claim Construction dated Oct.
`11, 2005 including Exhibits 14-18.
`Inter Partes Reexamination Communication dated Aug. 13, 2007 in
`Control No. 95/000,246 filed Mar. 22,2007 (Patent in Reexamination
`of 6,756,258).
`Defendant’ s Preliminary Invalidity Contentions and Accompanying
`Document Production dated Jun. 6, 2005.
`Revised Exhibits D-2, D-3, D-4, D-9 and D-15 to Defendant’s Pre-
`liminary Invalidity Contentions dated Jun. 14, 2005.
`Miyata et al., “Two-Mask Step-Inverted Staggered a-Si TFT-Ad-
`dressed LCDs,” SID International Symposium Digest of Technical
`Papers, pp. 155-158, May 1989.
`Yoshida et al., “A 9-in. Multicolor LCD Addressed by a-Si TFTs with
`High-Field-Effect Mobilities,” SID International Symposium Digest
`of Technical Papers, pp. 242-246, May 1988.
`Castleberry et al., “A 1 Mega-Pixel Color a-Si TFT Liquid-Crystal
`Display,” SID International Symposium Digest of Technical Papers,
`pp. 232-234, May 1988.
`A. Bell and D. Hess, “Fundamentals and Applications of Plasma
`Chemistry for IC Fabrication,” Journal of the Electrochemical Soci-
`ety, May 12, 1985.
`Inoue et al., “Low Temperature CMOS Self-Aligning Poly-Si TFTs
`and Circuit Scheme Utilizing New Ion Doping and Masking Tech-
`nique,” Seiko Epson Corporation, TFT Research Laboratory, Dec. 8,
`1991, pp. 555-558.
`Transcript of Michael Thomas, Ph.D., Dec. 14, 2006, Semiconductor
`Energy Laboratory Co., Ltd, v. Chi Mei Optoelectronics Corp. et al.,
`Case No. C 04 4675 MHP (N.D.CAL.), at 122:20-123:23.
`Appendix B to Rebuttal Expert Witness Report of Michael Thomas,
`Ph.D. (“Thomas Report”), Semiconductor Energy Laboratory Co.,
`Ltd v. Chi Mei Optoelectronics Corp. et al., Case No. C 04 4675
`MHP (N.D.Cal), Nov. 14, 2006.
`Transcript of Deposition of Shumpei Yamazaki, Aug. 24-26; 2006,
`Semiconductor Energy Laboratory Co., Ltd.
`v. Chi Mei
`Optoelectronics Corp. et al., Case No. C 04 4675 MHP (N.D.CAL.),
`at 404: 10-406:7.
`SEL’s Patent L.R. 4-2(b) Disclosure, Including Excerpt of Silicon
`VLSI Technology, Fundamentals, Practice and Modeling, James D.
`Plummer et al., p. 614, Prentice Hall, 2000, and Excerpt of Semicon-
`ductor Manufacturing Technology, Michael Quirk et al., p. 400,
`Prentice Hall, 2001.
`Peter Van Zant, “Microchip Fabrication: A Practical Guide to Semi-
`conductor Processing” (McGraw-Hill, 2nd ed. 1990), pp. 26-27.
`Peter Van Zant, “Microchip Fabrication: A Practical Guide to Semi-
`conductor Processing” (McGraw-Hill, 2nd ed. 1990), pp. 221-257.
`Order Granting Joint Motion Requesting Court to Vacate Order on
`Summary Judgment of(I) Invalidity ofU.S. Patent No. 6,756,258 as
`to Obviousness and (II) Infringement of US. Patent No. 6,404,480
`dated Jul. 6, 2007 (As titled, but in fact the Motion is Denied).
`C. Zarowin and R. Horwath, “Control of Plasma Etch Profiles with
`Plasma Sheath Electric Field and RF Power Density,” J. Electrochem.
`Soc.: Solid-State Science and Tech., Nov. 1982, pp. 2541-2547.
`
`* cited by examiner
`
`Exhibit 1001, page 5
`
`Exhibit 1001, page 5
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 1 of8
`
`US 7,923,311 B2
`
`FIG.I(0)
`
`LASER RADIATION
`
`12
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`
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`
`
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`
`hw/J/l—I—fil__h
`
`
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`
`5
`
`FIG.I(b)
`
`LASER RADIATION
`
`
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`
`
`
`
`MMé/I==
`
`
`
`Exhibit 1001, page 6
`
`Exhibit 1001, page 6
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 2 of8
`
`US 7,923,311 B2
`
`FIG . 1(0)
`
`1.
`
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`Exhibit 1001, page 7
`
`Exhibit 1001, page 7
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 3 of8
`
`US 7,923,311 B2
`
`FIG.2
`
`a gA E
`
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`xhibit 1001, page 8
`
`Exhibit 1001, page 8
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 4 of8
`
`US 7,923,311 B2
`
`3 2 1
`
`FIG.3(A)
`
`FIG.3(B)
`
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`
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`Exhibit 1001, page 9
`
`Exhibit 1001, page 9
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 5 of8
`
`US 7,923,311 B2
`
`FIG.3(F)
`
`
`
`FIG.3(G)
`
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`7/;
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`
`Exhibit 1001, page 10
`
`Exhibit 1001, page 10
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 6 of8
`
`US 7,923,311 B2
`
`FIG.4
`
`POINT B
`
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`l.7/////////////////////////////////////////////////////////////////////////////////,’////////l/A
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`Exhibit 1001, page 11
`
`Exhibit 1001, page 11
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 7 of8
`
`US 7,923,311 B2
`
`FIG.5
`
`[29\
`23 a II
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`
`Exhibit 1001, page 12
`
`Exhibit 1001, page 12
`
`

`

`US. Patent
`
`Apr. 12, 2011
`
`Sheet 8 of8
`
`US 7,923,311 B2
`
`LDI'H-
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`Exhibit 1001, page 13
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`
`Exhibit 1001, page 13
`
`

`

`US 7,923,311 B2
`
`1
`ELECTRO-OPTICAL DEVICE AND THIN
`FILM TRANSISTOR AND METHOD FOR
`FORMING THE SAME
`
`FIELD OF THE INVENTION
`
`The present invention relates to an electro-optical device
`and a thin film transistor and a method for forming the same,
`in particular, to a method of fabricating polycrystalline, or
`microcrystalline, silicon thin film transistors.
`
`BACKGROUND OF THE INVENTION
`
`One method of obtaining a polycrystalline, or microcrys-
`talline, silicon film is to irradiate a completed amorphous
`silicon film with laser radiation, for crystallizing the amor-
`phous silicon. This method is generally well known. Laser-
`crystallized thin-film transistors fabricated by making use of
`this technique are superior to amorphous silicon thin-film
`transistors in electrical characteristics including field effect
`mobility and,
`therefore,
`these laser-crystallized thin-film
`transistors are used inperipheral circuit-activating circuits for
`active liquid-crystal displays, image sensors, and so forth.
`The typical method of fabricating a laser-crystallized thin-
`film transistor is initiated by preparing an amorphous silicon
`film as a starting film. This starting film is irradiated with laser
`radiation to crystallize it. Subsequently, the film undergoes a
`series of manufacturing steps to process the device structure.
`The most striking feature of the conventional manufacturing
`process is to carry out the crystallization step as the initial or
`an intermediate step of the series of manufacturing steps
`described above.
`
`Where thin-film transistors are fabricated by this manufac-
`turing method, the following problems take place:
`(1) Since the laser crystallization operation is performed as
`one step of the manufacturing process, the electrical charac-
`teristics of the thin-film transistor (TFT) cannot be evaluated
`until the device is completed. Also, it is difficult to control the
`characteristics.
`
`(2) Since the laser crystallization operation is effected at
`the beginning of, or during, the fabrication of the TFT, it is
`impossible to modify various electrical characteristics after
`the device structure is completed. Hence, the production yield
`of the whole circuit system is low.
`
`SUMMARY OF THE INVENTION
`
`It is an object of the present invention to provide a novel
`method of fabricating polycrystalline, or microcrystalline,
`thin film transistors without incurring the foregoing prob-
`lems.
`
`In accordance with the present invention, in order to make
`it possible to crystallize a channel formation region and to
`activate the Ohmic contact region of the source and drain by
`la