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`SEL EXHIBIT NO. 2006
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`CHI MEI INNOLUX CORP. v. PATENT OF SEMICONDUCTOR ENERGY
`LABORATORY CO., LTD.
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`IPR2013-00064
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`Order Granting Joint Motion Requesting Court to Vacate Order on Summary Judgment
`of (I) Invalidity of U.S. Patent No. 6,756,258 as to Obviousness and (II) Infringement of
`U.S. Patent No. 6,404,480 dated July 6, 2007 (*As titled, but in fact the Motion is
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`publisher. city and/or countw where published,
`C. Zarowin and R. Horwath, “Control of Plasma Etch Profiles with Plasma Sheath
`Electric Field and RF Power Density,” J. Electrochem. Soc: Solid-State Science and
`Tech., November 1982, pp. 2541-2547.
`
`T2
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`Considered
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`Notice of References Cited
`
`Application/Control No.
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`Applicant(s)/Patent Under
`Reexamination
`
`ZHANG ET AL.
`11/893,333
`Examiner
`Art Unit
`
`MICHAEL S. LEBENTRITT
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`2829
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`Page 1 of1
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`U.S. PATENT DOCUMENTS
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`.
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`Date
`Document Number
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`Country Code-Number-Kind Code
`MM.YYYY
`CIaSSIflcatlon
`*
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`257/66
`257/49
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`438/150
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`349/43
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`257/350
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`438/153
`
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`FOREIGN PATENT DOCUMENTS
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`Notice of References Cited
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`Part of Paper No. 20091104
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`SEL EXHIBIT 2006
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`PAGE 3
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`Reddy, Damoder *
`
`05-1994
`01-1998
`
`06-2000
`
`05-2001
`
`02-2002
`
`01-2003
`
`Tominaga et al.
`
`Suzawa, Hideomi
`Yamazaki et al.
`
`Onisawa et al.
`
`Kitakado et al.
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`INFORMATION DISCLOSURE
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`STATEMENT BY APPLICANT
`Hon on ZHANG etal.
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`(ute armanysheetsasneceisaqy)
`M“
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`Include name of the author (in CAPITAL LETTERS), title ofthe article (when appropriate), title-ofthe
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`
`Semiconductor Energy Laboratory Co., Ltd’s Motion for Summary Judgment on its
`Claim of Infringement of the ‘480 Patent and on Defendants’ Inequitable Conduct,
`Laches, License, and Patent Misuse Affirmative Defenses dated March 19,2007
`
`Declaration of Stanley A. Schlitter in Support of Semiconductor Energy Laboratory Co.,
`Ltd.’s Motion for Summary Judgment (Exhibit 1, 5-21) dated March 19, 2007
`
`Defendants’ Motion for Summary Judgment of (A) Non-Infringement and Invalidity of
`the ‘258 Patent; (B) Non—Infringement and Invalidity ofthe ‘995 Patent; and (C) No
`Liability for Foreign Sales and/or Sales to Authorized Licensees dated March 19, 2007
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`Declaration of Robert W. Unikel in Support of Defendants’ Motion for Summary
`Judgment of (A) Non-Infringement and Invalidity of the ‘258 Patent; (B) Non-
`Infringement and Invalidity of the ‘995 Patent; and (C) No Liability for Foreign Sales
`and/or Sales to Authorized Licensees (Exhibit 2-17) dated March 19, 2007
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`Semiconductor Energy Laboratory Co. Ltd’s Memorandum of Points and Authorities in
`Opposition to Defendants’ Motion for Summary Judgment dated April 16, 2007
`
`Declaration of Stanley A. Schlitter in Support of Semiconductor Energy Laboratory Co.,
`Ltd.’s Opposition to Defendants’ Motion for Summary Judgment (Exhibit 2, 3, 6, 9, 10,
`13, 77) dated April 16, 2007
`
`Defendants’ Opposition to Semiconductor Energy Laboratory Co., Ltd’s Motion for
`Summary Judgment on its Claim ofInfringement of the ‘480 Patent and on Defendants’
`Inequitable Conduct, Laches, License, and Patent Misuse Affirmative Defenses dated
`April 16, 2007
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`
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`
`
`'
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`
`
`Declaration of Robert W. Unikel in Support of Defendants’ Opposition to Semiconductor
`Energy Laboratory Co., Ltd.’s Motion for Summary Judgment on its Claim of
`Infringement of the ‘480 Patent and on Defendants’ Inequitable Conduct, Laches, License,
`and Patent Misuse Affirmative Defenses (Exhibit 2, 8-14) dated April 16, 2007
`
`Semiconductor Energy Laboratory Co., Ltd.’s Reply in Support ofits Motion for
`Summary Judgement on its Claim of Infringement of the ‘480 Patent and on Defendants’
`Inequitable Conduct, Laches, License, and Patent Misuse Affirmative Defenses dated
`April 30, 2007
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` Examiner
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`
`Si_nature
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`Date
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`Declaration of Stanley A. Schlitter in Support of Semiconductor Energy Laboratory Co,
`Ltd.’ 5 Reply1n Support ofits Motion for Summary Judgment (Exhibit 1-3) dated April
`
`30, 2007
`.
`Defendants’ Reply Memorandum1n Support of its Motion for Summary Judgment of (A)
`Non-Infringement and Invalidity of the ‘258 Patent; (B) Non-Infringement and Invalidity
`of the ‘995 Patent; and (C) No Liability for Foreign Sales and/or Sales to Authorized
`Licensees dated A-ril 30, 2007
`Declaration of Ryan E. Lindsey in Support of Defendants’ Reply Memorandum in
`Support of its Motion for Summary Judgment of (A) Non-Infringement and Invalidity of
`the ‘258 Patent; (B) Non-Infringement and Invalidity ofthe ‘995 Patent; and (C) No
`Liability for Foreign Sales and/or Sales to Authorized Licensees (Exhibit A-G) dated
`
`April 30, 2007
`Joint Motion Requesting Court to Vacate Order on Summary Judgment of (I) Invalidity of
`US. Patent No. 6,756,258 as to Obviousness and (II) Infringement ofU.S. Patent No.
`
`6,404,480 dated Jul 5, 2007
`Rule 41 Stipulation ofDismissal dated July 6, 2007
`
`
`
`
`
`Order Granting Joint Motion Requesting Court to Vacate Order on Summary Judgment of
`(I) Invalidity ofU.S. Patent No. 6,756,258 as to Obviousness and (II) Infringement of
`US. Patent No. 6,404,480 dated Jul 6,2007
`Defendant Chi Mei Optoelectronics Corp.’s Notice of Motion and Motion for
`Clarification of the Court’s Claim Construction Order Regarding US. Patent Nos.
`6,404,480 and 6,756,258; Memorandum of Points and Authorities in Support Thereof
`dated June 9, 2006, Semiconductor Energy Laboratory Co., Ltd. v. Chi Mei
`Ootoelectronics Cor-., et al., No. C 04-04675 MHP, 9 a es.
`Plaintiff Semiconductor Energy Laboratory Co. Ltd’s Memorandum of Points and
`Authorities in Support of Its Opposition to CMO’s Motion for Clarification ofthe Court’s
`Claim Construction Order dated June 26, 2006, Semiconductor EnergyLaboratory Co.,
`Ltd. v. Chi Mei Outoelectronics Cor-., et al., No. C 04-04675 MHP, 10 1a es.
`Defendant Chi Mei Optoelectronics Corp.’s Reply Memorandum in Support of Its Motion
`for Clarification dated June 29, 2006, Semiconductor Energy Laboratory Co., Ltd. v, Chi
`'
`ntoelectronics Cor-., et al., No. C 04-04675 MHP, 8
`.
`Memorandum & Order Re: Motion for Clarification dated July 28, 2006, Semiconductor
`Energy Laboratory Co., Ltd. v. Chi Mei Optoelectronics Corp., et al., No. C 04-04675
`
`Memorandum & Order, Claim Construction, March 24, 2006, US. District Court,
`Northern District ofCalifornia, Semiconductor Energy Laboratory Co., Ltd. v. Chi Mei
`Otoelectronics Cor-., et al., No. C 04-04675 MHP.
`
`Date
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`Examiner
`.
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`1
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`SEL EXHIBIT 2006
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`SEL EXHIBIT 2006
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`Application Number
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`INFORMATION DISCLOSURE
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`STATEMENT BY APPLICANT
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`Document
`Passage: or Rclewnt Figures Appear
`
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`
`initials
`
`MM-DD-YYYY
`Document
`
`
` Number Kind Code2
`
`(if/mow")
`
`II
`I I
`5,003,356
`Wakai et al.
`03/26/1991
`
`
`II
`I I
`5,032,883
`Wakai et al.
`07/16/1991
`
`
`II=I Wakai et al. III 5,166,085 Wakai et al. I—
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`
`
`I I
`II
`5,229,644
`Wakai et a1.
`07/20/1993
`
`I I
`II
`Wakai et al.
`07/05/1994
`5,327,001
`
`Zhang et al.
`I I
`II
`01/25/2005
`6,847,064
`
`
`FOREIGN PATENT DOCUMENTS
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`Examiner
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`Applicant ofCited Document
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`Document
`MM-DD-YYYY
`
`Pages, Columns, Lines, Where
`Relevant Passages or Relevant
`Figures Appear
`
`
`
`02-268468
`
`11/02/1990
`10/05/1990
`
`II
`III
`III
`III-—
`EP
`0 347178
`2/20/1989
`II 1
`09/06/1990
`02-22422]
`II
`I —
`II
`OTHER PRIOR ART — NON PATENT LITERATURE DOCUMENTS
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`lnitials‘
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`Include name ofthe author (in CAPITAL LETTERS), title ofthe article (when appropriate), title ofthe
`item (book, magazine, journal, serial, symposium, catalog, etc.)., date, pagc(s), volume-issue number(s),
`publisher, city and/or country where published.
`
`Stipulation of Dismissal of SEL’s Claims Against Proview and Proview’s Claims Against
`SEL dated February 2, 2007
`Order (Proview Dismissal) dated February 7, 2007
`
`Stipulation of Dismissal ofSEL’s Claims Against all Defendents, and Defendants’ Claims
`Against SEL dated April 27, 2007
`[Proposed] Order (All Defendants Dismissal) dated April 27, 2007
`
`Order (All Defendants Dismissal) dated April 30, 2007
`
`Plaintiff‘s Original Complaint, Filed 05/05/2006, US. District Court, Eastern District of
`Texas, Marshall Division, Semiconductor Energy Laboratory Co., Ltd, v. HannStar
`
`
`Disla Cora, et al., Case No. 2-06CV-190.
`Date
`,.
`,,.
` /lvlichael Lebentritv’
`
`Considered
`1 “04/2009
`
`Examiner
`Si nature
`
`Initial ifrefercncc considered, whether or not citation is in conformance with MPEP 609. Draw line through citation ifnot in
`"EXAMINER:
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`Complete ifKnown ~~~~~~
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`Hon on- ZHANG et a1.
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`U.S. PATENT DOCUMENTS
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`
`
`Passages or Relevant Figures Appear
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`Name of Patentee or Applicant of Cited
`MM-DD-YYYY
`
`Document
`
`
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`
`03/30/1993
`
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`2/14/1993
`9/24/1991
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`7/21/1992
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`t1898833 ~ EN): 2829
`PTO/SB/08A (08—00)
`Approved for use through 10/31/2002. OMB 0651-0031
`U.S. Patent and Trademark Office: U.S. DEPARTMENT OF COMMERCE
`Under the Pa-erwork Reduction Act of 1995, no Iersons are re uired to res-0nd to a collection of information unless it contains a valid OMB control number.
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`Substitute for form 1449A/PTO
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`INFORMATION DISCLOSURE
`STATEMENT BY APPLICANT
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`(use as many sheets as necessary)
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`Kind Code2
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`FOREIGN PATENT DOCUMENTS
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`IVIM-DD-YYYY
`
`
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`Relevant Figures Appear
`Applicant of Cited Doeumenr
`Kind Code
`
`
`(ifknown)
`
`
`06/06/1989
`
`1 1
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`1 0
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`1-091467
`341 003
`C15
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`OTHER PRIOR ART — NON PATENT LITERATURE DOCUMENTS
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`Include name ofthe author (in CAPITAL LETTERS), title ofthe article (when appropriate), title ofthe
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`publisher, city and/or country where published.
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` Defendant’s Final Invalidity Contentions and Accompanying Document Production dated
`August 28, 2006
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`
`Yoshida et 31., “A 9-in. Multicolor LCD Addressed by a-Si TFTs with High—Field-Effect
`.I
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`
`
`.-
`
`
`ull
`ull
`
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`
`
`
`
`
`
`
`Miyata et al., “Two-Mask Step-Inverted Staggered o-Si TFT-Addressed LCD’s,” SID
`International Symposium Digest of Technical Papers, pp.155-158, May, 1989
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`7
`
`Castleberry et al., “A 1 Mega-Pixel Color a-Si TFT Liquid-Crystal Display,” SID
`International Symposium Digest ofTechnical Papers, pp. 232-234, May 1988
`
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`3,484,662
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`Koden
`Yamamoto et a1.
`Possin et at.
`
`Kwasnicketal.
`
`08/15/1989
`10/25/1994
`
`
`11/29/1988
`03/30/1993
`
`Kishi et a1.
`Babichetal.
`Yan- et at.
`Ha_on
`Wan ; et a1.
`
`05/05/1987
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`Full
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`04/10/1989
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`06/13/1991
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`Full
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`00
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`J J
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`11/08/1985
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`Full
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`C21
`C22
`C23
`C24
`C25
`C26
`C29
`C30
`C31
`C33
`C37
`
`
`
`
`
`JP
`2-210420
`JP
`1-114080
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`4-091120
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`2-272774
`P
`3-138980
`P
`2-234125
`JP
`60-224270
`JP
`63-224258
`09/19/1988 _—
`JP
`61-093488
`05/12/1986
`Full
`JP
`06/26/1986
`Full
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`publisher, cily and/or country where published.
`
`
`
`Peter Van Zant, “Microchip Fabrication: A Practical Guide to Semiconductor Processing”
`
`
`(McGraw-Hill, 2nd ed. 1990)
`
`
`Brian Chapman, “Glow Discharge Processes,” (John Wiley & Sons 1980), p. 299
`
`Kern & Deckert, “Thin Film Processes” (Academic Press 1978)
`
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`09/18/1984 —
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`
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`1 0
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`6/12/1990
`
`s '
`
`__
`
`Koba ashi
`
`.—
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`0
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`—
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`Number‘
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`4/23/1991 _
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`FOREIGN PATENT DOCUMENTS
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`(.y‘lamm.)
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`
`
`
`
`
`
`
`
`
`
`Examiner
`.
`.
`.
`Initials
`
`ull
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`=a5aI._.——1
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`n
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`C52
`C53
`C54
`C55
`C56
`C57
`Ou: so
`OLII NO
`ONO
`'0
`OTHER PRIOR ART — NON PATENT LITERATURE DOCUMENTS
`Include name ofthe author (in CAPITAL LETTERS), title of the article (when appropriate), title of the
`
`
`item (book, magazine. journal. serial, symposium, catalog, etc.)., date, page(s), volume-issue numbeds),
`publisher, city and/or country where published.
`
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`C. Adams and A. Capio, “Edge Profiles in the Plasma Etching of Polycrystalline Silicon,”
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`J. Electrochem. Soc: Solid—State Science and Tech, February 1981, pp. 366-370
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`1/08/1990
`1/08/l990
`1/02/1990
`5/17/1991
`2/24/1983
`2/26/1987
`3/15/1989
`7/22/1987
`
`1-1 17067
`2-001824
`2-001947
`02-268468
`03-1 16778
`58-222533
`62-299081
`64—068967
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`2,185,622
`
`P P
`
`‘—4
`H
`
`
`
`‘-1L4e—i'—1
`
`P
`
`I—i
`0
`
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`D. Castleberry et al., “a-Si Addressed Liquid Crystal Aircraft Display,” American Inst. Of
`Aeronautics and Astronautics, Inc., 1984, pp. 296-300.
`
`
`
`Examiner
`Date
`1. wet/2009
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`,r’Michaoi Lobentriit/
`Si_nature
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`
`Substitute for form I449A/PTO
`Complete ifKnown
`
`
`
`
`
`Auust 26, 2004
`
`
`
`Hon- unlit/mama].
`
`
`""""~.«
`~~
`‘
`.. ......
`
`
`
`
`
`: itt
`
`
`
`Examiner
`Initials'
`
`Cite
`No.l
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`OTHER PRIOR ART — NON PATENT LITERATURE DOCUMENTS
`
`Include name of the author (in CAPITAL LETTERS), title ofthe article (when appropriate), title cfthe
`item (book, magazine. journal, serial, symposium, catalog, etc.)., date, page(s), volume-issue number(s),
`publisher, city and/or country where published.
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`Related Materials,” J. Electrochem. Soc.: Solid-State Science and Tech, August 1988, pp.
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`R. Light, “Reactive Ion Etching of Aluminum/Silicon,” J. Electrochem. Soc.: Solid-State
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`
`Examiner
`gimme
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`INFORMATION DISCLOSURE
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`Initials
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`C82
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`C on 3
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`OTHER PRIOR ART — NON PATENT LITERATURE DOCUMENTS
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`Cite
`Include name of the author (in CAPITAL LETTERS), title of the article (when appropriate), title of the
`No.'
`item (book. magazine, journal serial symposium, catalog, etc.) date page(s) volume-issue number(s),
`publisher, city and/or country where published
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`4954218 _ 09/04/1990 —
`_ €100
`
`_c101 5,166,757 - KItamura et a1
`11/24/1992 _
`
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`OTHER PRIOR ART — NON PATENT LITERATURE DOCUMENTS
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`No'
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`C90
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`Include name of the author (in CAPITAL LETTERS), title ofthe article (when appropriate), title ofthe
`item (book, magazine,joumal, serial, symposium, catalog, etc.)., date, page(s), volume-issue number(s),
`publisher, city and/or country where published.
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