SEL-CM00064398
`
`.
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`F r
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`H01L
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`29/78
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`311 A
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`(19)
`(12)
`(11)
`(43)
`
`.
`‘
`Japan Patent Office (JP)
`Laid-open Patent Application Publication (A)
`Unexamined Patent Application Publication i-l 5-243333
`Publication Date: 912111993
`
`(51) int cr.‘
`H01L
`21I60
`GOZF
`1 I1 36
`H01L
`27/12
`291784
`
`Identification Code
`311
`T
`600
`
`A
`
`-
`Technology Disclosure Location
`
`Examination not yet requested
`Number of Claims: 1_ (Totai of 6 pages)
`
`File No.
`6918-4M
`9018-2K
`87284M
`
`9056-4M
`
`(21)
`(22)
`
`(71).
`
`Application No.: H 4-39840
`Application Date: 2/26/1992
`
`Applicant
`-
`
`000004237
`uec Corp.
`5-7-1 Shiba. Minato-ltu. Tokyo
`
`(72)
`
`inventor:
`
`(‘Hiroaki' OR 'Komei'] Moriyama
`NEC Corp.
`5.7-1 Shiba. Minato-ku. Tokyo
`
`(74)
`
`(54)
`
`Representative: [‘Gikou,’ 'lhen' OR 'Yoshiyouki’] lwasa
`
`{Name of invention] Thin-film Electric Field-effect Transistor Substrate
`
`(57)
`[Object]
`
`[Abstract]
`To reduce mask costs by making thin-film transistor substrate connection
`terminal part patterns identical regardless of the manufacturing process.
`
`[Composition] Contact holes 2 are fabricated in an insulating layer 5 on top of an underlying
`metal layer 1. The contact holes 2 are fabricated on only a portion of the top part
`of the underlying metal layer 1. An overlay metal layer 3 completely covers the
`contact holes 2, and the surface area thereof is less than half the surface area of
`a transparent metal layer 4 of the terminal part top layer contact surface.
`Regardless of the sequence in which the overlay metal layer 3 and the
`transparent metal layer 4 are fabricated. more than half of the terminal part
`surface area is the transparent metal layer 4.
`
`[INSERT FIGURES]
`
`[Patent Claim]
`[Claim 1]
`
`A thin-film electric field-effect transistor substrate. wherein. in a contact terminal
`part comprising. at least. an underlying metal layer. an insulating layer. contact
`holes. an overlay metal layer. and a transparent metal layer. at the periphery part
`of a thin-film electric field-effect transistor substrate fabricated with multiple scan
`lines laid out in parallel and multiple signal lines laid out in parallel so as to
`intersect each other. with thin-film electric field-effect transistors fabricated at
`each intersection between said scan lines and said signal lines. said contact
`holes are fabricated on only a portion of the area on top of said underlying metal
`
`\M-m-tmhn
`
`A~368423
`
`SEL-CMO 0064398
`
`Exhibit 1004, page 1
`
`Exhibit 1004, page 1
`
`

`

`SEL-CM00064399
`
`layer, said overlay metal layer completely covers said contact holes. and at least
`a part of said transparent metal layer is fabricated as the top layer.
`
`0002
`
`{PriorlArtl
`
`[Detailed Explanation of the invention]
`[0001]
`[Area of Use in industry]
`The present invention relates to thin-film field transistor-drive liquid crystal display
`devices. and in particular. relates to thin-film field-effect transistor substrates.
`'
`Liquid crystal displays have been developed asflat panel display for portable
`computers and pocket television sets. and of these [liquid crystal displays]. active
`manor-type displays. wherein thin-film field-effect transistors are labricated in an
`array on a glass substrate and are used as switches for each pixel. have been
`actively developed and commercialized by a variety of organizations as space-
`saving and power-saving displays because they are capable of producing full-
`color displays on par with those of cathode ray tubes. It is imperative to decrease
`their cost and increase their reliability it these active matrix liquid crystal displays
`are to be accepted broadly.
`
`[0003]
`
`[0004]
`
`(0005]
`
`In thin-film field-effect transistor-driven liquid crystal display devices. the thin-film
`field-effect transistors are used as switching elements. Figure 6 shows a planar
`view at a conventional thin field-effect transistor substrate terminal part and a
`display element array part thin-film field-effect transistor that use amorphous
`silicon hydride [sic?] thin-film field-effect transistors as the switching elements.
`Figure 7 (a) shows a cross-sectional diagram along the sections BE and F-F’ in
`the terminal part In Figure 6. Furthermore. Figure 7 (b) shows a cross-sectional
`drawing along the section G-G' in the thin-film field-effect transistor of Figure 6.
`Figure 8 shows a planar view of a thin~film field-effect transistor substrate
`terminal part and a display element any part thin-film field-effect transistor with
`another conventional structure. Figure 9 (a) is a cross-sectional drawing along
`the sections H~H‘ and I-l' in the terminal part in Figure a. Figure 9 (b) is a cross~
`sectional drawing along the section J-J' in the thin-film field-effect transistor in
`Figure 8.
`
`in Figures 6 and 9. 1 is a terminal part underlying metal layer. 5 is an insulating
`layer. 2 is a contact hole that in the insulating layer 5. 3 is an overlay metal layer.
`4 is a transparent metal layer. 6 is a scan line. 7 is a gate electrode. 8 is
`amorphous silicon. 9 is amorphous silicon doped with phosphorous. 10 is a
`signal line, 11 is a source electrode. 12 is a drain electrode, 13 is a pixel
`electrode. and 14 is a glass substrate. Furthermore. the part shown by the dotted
`line in Figure 7 (a) is a part or an extemai circuit. where 20 is a base tile [SIC -
`'film?']. 21 is a copper plate interconnect pattern. 22 is a thermally curable resin.
`and 16 is a metal particle (solder).
`
`in actual thin-film field-effect transistor substrates. the scan lines 6 and Signal
`lines 10 in Figures 6 and 8 are laid out in the form or a matrix. where thin-film
`field-effect transistors are fabricated in the vicinity of the intersections between
`the scan lines 6 and the signal lines 10. The terminal part underlying metal layer
`
`w-sm-rssmsn
`
`A36842‘
`
`SEL-CMO 0064399
`
`Exhibit 1004, page 2
`
`Exhibit 1004, page 2
`
`

`

`SEL-CM00064400
`
`[0006]
`
`[0007]
`
`[0008]
`
`[0009]
`
`One conventional thin-film field-effect transistor substrate structure win be
`explained by showing the manufacturing process using Figures 6 and 7. First a
`terminal part underlying metal layer 1. scan lines 6, and gate electrodes 7, made
`from a 2000 angstrom-thick chrome layer. are fabricated on a glass substrate 14.
`Next, a gate insulator layer 5. made from a 3000 angstrom-thick silicon nitride
`layer. a 3000 angstrom-thick amorphous silicon 8. and a 500 angstrom-thick
`phosphorous-doped amorphous silicon 9 are fabricated sequentially. after which
`islands, made from the amorphous silicon 8 and the phosphorousdoped silicon
`9. are formed on the gate electrodes 7. Next contact holes 2. which make contact
`with the underlying metal layer 1 in the terminal part. are fabricated in the
`insulation layer 5 in the terminal part. Chrome is then used to fabricate the
`terminal part underlying metal layer 3. the signal lines 10. the source electrodes
`11. and the drain electrodes 12 to a thickness of 2000 angstroms. After this. the
`transparent metal layer 4 and the pixel electrodes 13 are fabricated from indium
`tin oxide (ITO). to a thickness of 500 angstroms. Following these processes. the
`phosphorous-doped amorphous sllicon 9 is removed from between the source
`electrodes 11 and the drain electrodes 12. producing the thin-film field-effect
`transistors.
`
`The connections to the external circuits are made by placing a base film 20. on
`which a copper plating pattern 21 Is fabricated. on a specific location with a
`thermal curable resin 22. which contains metal particles 16. interposed between
`[said copper plating pattern 21 and] the transparent metal layer 4. The copper
`plating pattern 21 and the transparent metal layer 4 are connected to each other
`through the metal particles 16. The benefit of this structure is that excellent
`connections can be made because. in the terminal part of Figure 7 (a). the step
`height part of the contact hole 2 is covered by the terminal part overlay metal
`layer 3; however. the drawback is that the pixel electrodes 13 become
`discontinuous at the step height part of the drain electrode 12 terminal in the thin-
`film field-effect transistor part shown in Figure 7 (b). making the connections
`unreliable.
`
`The difference in the other conventional thin-film field-effect transistor substrate
`structure shown in Figures 3 and 9 is that the terminal part overlay metal layer 3.
`the signal lines 10. and source electrodes 11. and the drain electrodes 12 are
`fabricated after fabricating the terminal part transparent metal layer 4 and pixel
`electrodes 13. The benefit of this structure is that excellent connections are made
`in the drain electrode 12 terminals in the thin-film field-effect transistors in Figure
`9 (b). because the step height part with the pixel electrodes 13 is covered by the
`top-layer drain electrodes 12; however, the drawback is that the step height parts
`of the contact holes 2 in the terminal part in Figure 9 (a) are covered only by the
`transparent metal layer.
`
`In Figure 7 (a) and Figure 9 (a). the topmost layer in the terminal part is made out
`of the transparent metal layer 4. The reason for this is that the surface becomes
`oxidized and thus becomes highly resistant with metals such as chrome,
`aluminum. or the like. thus degrading the connections with external circuitry and
`leading to a loss of reliability. so ITO. which is resistant to oxidation because it
`already contains oxygen. is used as the contact surface with external circuitry, to
`make low-resistance reliable electrical connections.
`
`[0010]
`[Problem Solved by the Present Invention]
`Thin-film filed effect transistor substrates of either of the two conventional
`structures are selected based on requirements such as manufacturing process
`conditions and the size of the liquid crystal display device. For example, when
`
`“IA-MGM"
`
`A-368425
`
`SEL-CMO 0064400
`
`Exhibit 1004, page 3
`
`Exhibit 1004, page 3
`
`

`

`SEL-CM00064401
`
`'
`
`*'
`
`fabricating ultra fine thin-film field-effect transistors. a manufacbrring process is
`used wherein the drain electrodes are made last. in consideration of the quality of
`the contacts with the drain electrodes and the pixel electrodes. while a
`manufacturing process is used wherein it is the pixel electrodes that are
`fabricated hst when fabricating thin—film field-effect transistors that are not so
`fine. When the planar views in Figure 6 and Figure 8 are examined. the planar
`views of the thintilm field-effect transistors are identical. but the planar views of
`the terminal parts are different. This is because when the drain electrode is made
`first when using a mask pattern for manufacturing with the drain electrode
`fabricated last. the underlying metal layer is also removed when fabricating the
`top metal layer. and when the drain elecme is made last using a mask pattern
`for manufacturing with the drain electrode made first. the surface for connecting
`with the external circuitry will be the top metal layer instead of the transparent
`metal layer. In other words. the conventional [approach] required a larger number
`of masks because. even when thin—film field-effect transistors of identical sizes
`were fabricated. it was necessary to provide different mask patterns for the
`photolithography for fabricating the terminal parts.
`
`[0011)
`
`The object of the present invention is to provide a thin-film field-effect transistor
`substrate wherein the same mask pattern can be used regardless of the
`‘ manufacturing process selected.
`
`[0012]
`[Means By Which the Problem is Solved]
`The thin-film field-effect transistor substrate according to the present invention. is
`a thin-film field-effect transistor wherein. in a contact terminal part comprising. at
`least. an underiying metal layer. an insulating layer. contact holes. an overlay
`metal layer. and a transparent metal layer. at the periphery part of a thin-film
`electric field-effect transistor substrate fabricated with multiple scan lines laid out
`in parallel and multiple signal lines laid out in parallel so as to intersect each
`other. with thin-film electric field-eflect transistors fabricated at each intersection
`between said scan lines and said signal lines. said contact holes are fabricated
`on only a portion of the area on top of said underlying metal layer. said overlay
`metal layer completely covers said contact holes. and at least a part of said
`transparent metal layer is fabricated as the top layer.
`
`[0013]
`[Example Embodiments]
`Figure 1 is a planar view of one example embodiment of a thin-film field-effect
`transistor substrate according to the present invention. Figures 2 (a) and (b) are
`cross-sectional drawings of the terminal part. Figure 2 (a) is a cross-sectional
`drawing along the section A-A‘ and along the section B-B' in the terminal part in
`Figure 1 in the case wherein the substrate part top metal layer is fabricated first
`and the transparent metal layer is fabricated on the surface attemards. The
`cross-sectional drawing along the section C-C' in the field-effect transistor part is
`the same as in the conventional Figure 7 (b). Figure 2 (b) is a cross-sectional
`drawing along the section A~A' and section B-B‘ in the terminal part in Figure 1 in
`the case wherein the transparent metal layer is fabricated first and the top metal
`layer in the terminal part is fabricated afterward. In this case. the cross-sectional
`drawing along the section C-C' in thin-film field-effect transistor part is the same
`as in the conventional Figure 9 (b).
`
`(0014]
`
`in Figure 1 and Figure 2. 1 is a the terminal part underlying metal layer, Sis an
`insulating layer. 2 is a contact hole in the insulating layer 5. 3 is an overlay metal
`layer. 4 is a transparent metal layer. 6 is a scan line. 7 is a gate electrode. 8 is
`amorphous silicon, 9 is phosphorous-doped amorphous silicon. 10 is a signal
`
`m-msaoom- 155mm
`
`A-358426
`
`SEL-CMO 0064401
`
`Exhibit 1004, page 4
`
`Exhibit 1004, page 4
`
`

`

`SEL-CM00064402
`
`-'
`
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`
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`--—\
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`—...-.
`
`[001 5]
`
`[0016]
`
`[0017]
`
`[0018]
`
`[0019]
`
`line. 11 is a source electrode. 12 is a drain electrode. 13 is a pixel electrode. and
`14 is a glass substrate.
`
`Amorphous silicon hydride field-effect transistors are used as switching
`elements. In actual thin-film field-effect transistor substrates, the scan lines 6 and
`the signal lines 10 in Figure 1 are hid out in a matrix pattern. where connection
`terminals are fabricated at the ends of the scan lines 6 and the ends of the signal
`lines 10, and thin-film field-effect transistors are fabricated in the vicinity of the
`intersections between these scan lines 6 and the signal lines 10. The terminal
`part underlying metal layer 1. the scan lines a. and the gate electrodes 7 are all
`made from the same metal layer. The terminal part overlay metal layer 3, the
`signal lines 10, the source electrodes 11. and the drain electrodes 12 are each
`made from the same metal as each other. and the terminal part transparent
`metal layer 4 and pixel electrodes 13 are each made of the same metal as each
`other.
`
`The thin-film field oxide transistor part (the cross-section along section 06' in
`Figure 1) according to the present invention has the same structure as in the
`conventional Figure 7 (b) and Figure 9 (b). Furthermore. the connections with the“
`external circuits are the same as in Figure 7 (a). The terminal part in this example
`embodiment will be explained. In Figure 1 and Figure 2. the contact holes are
`fabricated in only a part over the terminal part underlying layer 1. and the overlay
`metal layer 3 is of the minimum size required to completely cover contact holes
`2.
`
`in Figure 2 (a) the overlay metal layer 3 is fabricated first. and the transparent
`metal layer 4 is fabricated aftemards. Because in the contact holes 2 the overlay
`metal layer 3 covers the step-height part. the electrical contact between the
`underlying metal layer 1 and the top-most layer. the transparent metal layer 4. is
`assured. in addition, because the entire surface of the terminal part is the
`transparent metal layer 4. connections with the outside circuitry can also be
`made with low resistance.
`
`On the other hand, in Figure 2 (b) the transparent metal layer4 is fabricated first.
`and the overlay metal layer 3 is fabricated afterwards. In the contact hole 2 the
`overlay metal layer 3 is covered by the transparent metal layer 4 from above at
`the step height. making a more reliable electrical connection between the
`underlying metal layer 1 and the transparent metal layer 4. in addition. because
`most of the surface of the terminal part is the transparent metal layer 4. the
`electrical connections with the external circuitry are similarly low resistance. The
`external circuitry can be connected through the surface of the low-resistance
`transparent metal layer 4 by disposing the transparent metal layer 4 as the top
`most layer on the terminal part by making the surface area of the overlay metal
`layer 3 smaller than they of the transparent metal layer 4 on the surface of the
`terminal part
`
`Figure 3 shows a planar view of another example of a terminal part of a thin-film
`field-effect transistor substrate according to the present invention. in the actual
`terminal part the length is several millimeters (in the horizontal direction in Figure
`3). and the width is several dozen to several hundred microns (in the vertical
`direction in Figure 3). The transparent metal layer 4 is highly resistive as a bulk
`material (as opposed to a surface oxide) when compared to the overlay metal
`layer 3, and thus. in order to reduce the resistance. the contact holes 2 and
`overlay metal layer 3 are fabricated in the center of the terminal part as well. in
`addition, by increasing the number of contact holes, it has been possible to
`reduce the resistance and increase the reliability of the electrical contacts
`
`\m-mmas-issczevt
`
`A-363427
`
`SEL-CMO 0064402
`
`Exhibit 1004, page 5
`
`Exhibit 1004, page 5
`
`

`

`SEL-CM00064403
`
`.
`
`'
`
`-
`
`-- ~
`
`..-.
`
`[0020]
`
`[0021]
`
`[0022]
`
`between the underlying metal leyert and the transparent metal layer-1 on the
`surface. Even in this use. the surtace area of the overlay metal layer 3 has been
`set to be smaller than the surface area of the transparent metal layer 4. so that at
`least a portion of the topmost layer is the transparent metal layer 4. thereby
`making secure contact with the external circuitry.
`
`Figure 4 shows a planar view of an example embodiment corresponding to the
`contact part with the substrate that faces the terrnlnal part of the thin-film field-
`effect transistor substrate according to the present invention. Figure 5 shows a
`cross-sectional drawing along the section D-D' in the contact terminal part with
`the opposing substrate in Figure 4. In Figures 4 and 5. 15 is an interconnect line
`(connecting) the external circuit connection terminal part [at the top of Figure 4)
`and the opposing substrate contact terminal part (at the bottom of Figure 4). 16 is
`a metal particle (sihrer), 17 is an opposing electrode made from a transparent
`metal. 18 is a liquid crystal, and 19 is a seal material tor plugging the liquid
`crystal.
`
`The structure of the extemel circuitry connection terminal part in this example
`embodiment is the same as in the example embodiment described above. In the
`opposing substrate connection terminal part. contact holes 2 are formed over a
`part of the underlying electrode [SIC] 1 in this use as well (in this example
`embodiment. at the four comers). in a structure comprising an overlay metal
`layer 3 that covers the contact holes. and a transparent metal layer that covers
`the entire opposing substrate connection terminal part As is shown in the cross-
`sectional diagram in Figure 5. the transparent metal layer 01 the terminal part is
`connected to the opposing electrodes 17. with low electrical resistance. through
`metal particles 16. made of silver.
`
`Although in the example embodiments described above. the transparent metal
`layer was iTO (indium tin oxide), an NESA (tin oxide) layer could be used
`instead. Furthermore. in addition to chrome. other metals such as aluminum,
`molybdenum. tungsten. nickel. tantalum. etc. could be used as the metal layers.
`Moreover, although in this example embodiment an amorphous silicon thin-film
`field-effect transistor was used as a switching element. other transistors. such as
`polysilicon thin-film field-effect transistors could be used as well.
`
`[0023]
`[Efiects of the Invention]
`As described above. the thin-film field-effect transistor substrate with the terminal
`part according to the present invention is effective in practical use because it
`controls the cost of masks because it makes it possible to use the same mask
`patterns in different manufacturing processes.
`
`[Simple Explanation of Drawings]
`[Figure 1) A planar view of a thin-film field-effect transistor substrate.
`[Figure 2] A cross-sectional diagram oi the thin-film field-effect transistor substrate in
`Figure 1.
`[Figure 3] A planar view of the terminal part of a thin-film field-effect transistor substrate.
`[Figure 4] A planar view of a thin-film fieldefiect transistor substrate.
`[Figure 5] A cross-sectional drawing of the thin-film lield~ettect transistor substrate in
`Figure 4.
`[Figure 6] A planar view of a conventional thin-film field-effect transistor substrate.
`[Figure 7] A cross-sectional drawing of the conventional thin-film field-effect transistor
`substrate in Figure 6.
`[Figure 81A planar view of a conventional thin-film field-effect transistor substrate.
`
`W-m- lessens
`
`A-368428
`
`SEL-CMO 0064403
`
`Exhibit 1004, page 6
`
`Exhibit 1004, page 6
`
`

`

`SEL-CM00064404
`
`[Figure 9] A cross-sectional drawing of the conventional thin-film field-effect transistor
`substrate in Figure B.
`
`[Explanation of Codes]
`1:
`Underlying metal hyer
`2:
`Contact hole
`3:
`Overlay metal layer
`4:
`Transparent metal layer
`5:
`Insulating layer
`6:
`Sun line
`7:
`Gale electrode
`8:
`Amorphous silicon
`9:
`Phosphorous-doped amorphous silicon
`10:
`Signal line
`11:
`Source electrode
`12:
`Drain electrode
`1 3:
`Pixel electrode
`14:
`Glass substrate
`15:
`Interconnect line ,
`16:
`Metal particle
`17:
`Opposing electrode
`18:
`Liquid crystal
`19:
`Seal material
`20:
`Base film
`21:
`Copper plating pattern
`22:
`Thermally curable resin
`
`[Figure 1]
`
`[Figure 2]
`
`[Figure 3]
`
`[Figure 4]
`
`[Figure 5]
`
`[Figure 6]
`
`[Figure 7)
`
`[Figure 8]
`
`[Figure 9]
`
`“U-Im-Imfl
`
`A-368429
`
`SEL-CMO 0064404
`
`Exhibit 1004, page 7
`
`Exhibit 1004, page 7
`
`

`

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`A-368417
`
`SEL-CMO 0064392
`
`Exhibit 1004, page 8
`
`Exhibit 1004, page 8
`
`

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`A-368418
`
`SEL-CMO 0064393
`
`Exhibit 1004, page 9
`
`Exhibit 1004, page 9
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`

`

`SEL-CM00064394
`
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`A-36841 9
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`SEL-CMO 0064394
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`Exhibit 1004, page 10
`
`Exhibit 1004, page 10
`
`

`

`SEL-CM00064395
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`SEL-CMO 0064395
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`Exhibit 1004, page 11
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`Exhibit 1004, page 11
`
`

`

`SEL-CM00064396
`
`" "
`
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`A-368421
`
`SEL-CMO 0064396
`
`Exhibit 1004, page 12
`
`Exhibit 1004, page 12
`
`

`

`SEL-CM00064397
`
`(6)
`
`aunts-243333
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`
`[EB]
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`A-368422
`
`SEL-CMO 0064397
`
`Exhibit 1004, page 13
`
`Exhibit 1004, page 13
`
`