throbber
UTILITY
`PATENT APPLICATION
`TRANSMITTAL
`rovisiomzl aplications under 37 CFR 1.53(b))
`APPLICATION ELEMENTS
`
`I.
`
`PTO/SB/05 (O8-00)
`Approved for use through 10/31/2002 OMB D65}-0032
`U S. Patent and Trademark Office; US. DEPARTMENT OF COMMERCE
`
`0756-2237
`
`C
`E-I
`Attorney Docket No.
`Yoslliharu HIRAKATA etfig.
`First Inventor
`.1“
`CONTACT STRUCTURE
`Title
`In:
`
`Exress Mail Label No.
`
`ADDRESS TO:
`
`Assistant Commissioner forW
`Box Patent Application
`w
`T'-
`Washington, DC 20231
`7. El CD—ROM or CD«R in duplicate, large table or
`Computer Program (Appendix)
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`(zfapplicable, all necessary)
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`1. Cl CD—ROM or CD-R (2 copies; or
`ii. L—.l paper
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`ACCOMPANYING APPLICATION PARTS
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`II]aslZll'_‘lno
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`Assignment Papers (cover sheet & document(s))
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`Attorney
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`See MPEI’ chapter 600 concerningulility patent application contents.
`1.
`Fee Transmittal Form (c.g., PTO/SB/l7)
`{Submit an original and a duplicciteforfec processing)
`2. D Applicant claims small entity status.
`See 37 CFR L27
`3.
`[Total Pages 36]
`Specification
`(prefened airaiigement set fozth below)
`Descriptive title of the invention
`Cross Reference to Related Applications
`Statement Regarding Fed sponsored R & D
`Reference to sequence listing, a table,
`or a computer program listing appendix
`Background of the Invention
`Brief Summaiy of the Invention
`Brief Description of the Drawings (zffiled)
`Detailed Description
`Claim(s)
`Abstract of the Disclosure
`Diawingts) (35 U.S.C J13) Figs. 1-14 [Total Sheets 13]
`4.
`5. Oath or Declaration
`[ Total Sheets 3 ]
`a
`El Newly executed (original or copy}
`b.
`Copy from a prior application (37 CFR I.63(d))
`for continu:ztz'on/divisional with Box 1 7 completed)
`B DELETION OF INVENTOR(S)
`Signed statement attached deleting inventor(s)
`named in the prior application, see 37 CFR
`l.63(d)(2) and l.33(h)
`6. El Application Data Sheet. See 37 CFR 1.76
`17.
`If a CONTINUING APPLICATION, check appropriate box, and supply the requisite information below and in :1 prelzmmaify amendment,
`or in an Application Data Sheet under 37 CFR 1.76:
`ofprior application No.: 09/36l ,2l8 filed Jug 27, I999 which
`D Continuation
`l;El Divisional
`El C01lllIll.la1lOl’lvll'lvpB1'l(ClP)
`itselfis a Divisional of Serial No. 09/046 685 filed March 24. 1998 HOW U.S. Patent 5 932 471.
`
`Prior application information
`2871
`Group I An Unit:
`I). Nguyen
`Examiner
`For CONTINUATION OR DIVISIONAL APPS only: The entire disclosure of the prior application, from which an oath or declaration is supplied under
`Box 5b, is considered £1 part of the disclosure nfthe accompanying continuation or divisional application and is hereby incorporated by reference. The
`incorporation can onlv be relied upon when a portion has been inadvertently omitted from the submitted application parts.
`18. CORRESPONDENCE ADDRESS
`22204
`(Insert Customer Na. oratztach bar code label here)
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`D Customer Number or Bzzr Coda Label
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`Name
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`Address
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`Eric J. Robinson
`NIXON PEABODY LLP
`8180 Greensboro Drive, Suite 800
`McLean
`United States
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`or
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`Cl Correspondence address below
`
`State
`home
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`I VA
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`[zip Code
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`Eric J. Robinson
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`this form is estimated to take 02 hours to complete. Time Will vary depending upon the needs of the individual case.
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`38,285
`
`l
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`NVAl6l)091.l
`
`Exhibit 1002, page 1
`
`

`
`PTO/SB/17 (09-00)
`Approved for use through 10/31/2002. OMB 0651-0032
`US. Patent and Trademark Office; U.S. DEPARTMENT OF COMMERCE
`Under the Pa erwork Reduction Act of 1995, no ersons are reuired to res nd to a collection of information unless it disla s a valid OMB control number.
`Co£i2lete_z_'LKnawn
`Not Yet Assigned
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`’
`TYoshiharu I-IIRAKATA et 211
`
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`D‘ Nguye“
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`Group Art Unit
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`($) 1400.00
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`130
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`65
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`Fee Description
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`Um” 37 CFR 1-16 and 1'17
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`D Applicant chums Small enmy Status’
`See 37 CFR 1.27
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`227
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`139
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`25
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`Surcharge — late provisional filing fee or cover
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`Fee
`Fec
`Code
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`Code
`(S)
`101
`710
`201
`355
`106
`320
`206
`160
`107
`490
`207
`245
`710
`208
`355
`150
`214
`75
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`Fee Description
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`Divisional Fling fee
`Design filing fee
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`SUBTOTAL (1)
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`Extra Claims
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`X
`
`30
`
`2,
`
`Total Claims
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`Fee from
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`13.00
`
`Independent
`Claims
`Multiple Dependent
`
`6
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`—3** —
`
`3
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`X 80.00
`
`Large Entity
`Fee
`Fee
`Code
`103
`
`18
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`Small Entity
`Fee
`Fee
`(S) Code
`203
`9
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`Fee Description
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`Claims in excess Ono
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`Fee Paid
`$180.00
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`$240 00
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`$270 00
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`202
`204
`209
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`40
`13 5
`40
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`102
`104
`109
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`80
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`80
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`Independent claims in excess of 3
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`
`215
`216
`
`217
`218
`228
`219
`220
`221
`138
`
`240
`24]
`242
`243
`
`244
`122
`123
`
`5 S1
`
`146
`
`149
`
`179
`169
`
`40
`
`710
`
`710
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`710
`900
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`required to complete this form should be sent to the Chief lnforrnzition Officer. U.S. Patent and Trademark Office, Washington, DC 20231. DO NOT SEND FEES OR COMPLETED FORMS
`TO THIS ADDRESS. SEND TO: Assistant Commissioner for Patents, Washington, DC 20231.
`NVA139273.1
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`Exhibit 1002, page 2
`
`

`
`Docket No.: 0756-2237
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`In re DIVISIONAL Application of
`
`Yoshiharu HIRAKATA et al
`
`Based On Serial No. 09/361,218
`
`Art Unit:
`
`2871
`
`Which was filed:
`
`July 27, 1999
`
`Examiner: D. Nguyen
`
`For:
`
`CONTACT STRUCTURE
`
`PRELIMINARY AMENDMENT
`
`Honorable Assistant Commissioner for Patents
`
`Washington, D.C. 20231
`
`Sir:
`
`Please amend the subject application as follows:
`
`IN THE SPECIFICATION:
`
`Before the first sentence of the specification, insert --This application is a
`
`Divisional of Application Serial No. 09/361,218 filed July 27, 1999; which itself is a
`
`Divisional of Serial No. 09/046,685 filed March 24,
`
`l998 now U.S Patent
`
`5,982,471.--
`
`REMARKS
`
`This application has been amended to include the continuing application data
`
`thereof.
`
`Exhibit 1002, page 3
`
`

`
`Docket N0.: O756~2237
`
`Examination on the merits is requested.
`
`Respectfully submitted,
`
`Eric J. Robinson
`
`Registration No. 38,285
`
`NIXON PEABODY LLP
`
`8180 Greensboro Drive, Suite 800
`McLean, Virginia 22102
`(703) 790-9110
`
`Exhibit 1002, page 4
`
`

`
`Docket No.: 0756-2237
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`In re Divisional Application of
`
`Yoshihani HIRAKA et al
`
`Based On Serial No.: 09/361,218
`
`Art Unit: 2871
`
`Which was filed:
`
`July 27, 1999
`
`Examiner: D. Nguyen
`
`For:
`
`CONTACT STRUCTURE
`
`INFORMATION DISCLOSURE STATEMENT
`
`Honorable Assistant Commissioner for Patents
`
`Washington, D.C. 20231
`
`Sir:
`
`In accordance with the provisions of 37 C.F.R. 1.56 and 37 C.F.R. 1.97-1.99,
`
`it is requested that the reference listed on the attached Form PTO-1449 be made of
`
`record in the aboVe—identified application.
`
`The references listed on the attached Form PTO-1449 were cited in parent
`
`application Serial Nos. 09/361,218, 09/046,685.
`
`Respectfully Submittetd,
`n
`
`Eric J. Robinson
`
`Registration No. 38,285
`
`Nixon Peabody LLP
`8180 Greensboro Drive, Suite 800
`McLean, Virginia 22102
`(703) 790-9110
`
`NVA1S7l6l l
`
`Exhibit 1002, page 5
`
`

`
`CONTACT
`
`STRUCTURE
`
`BACKGROUND OF THE INVENTION
`
`Field of the Invention
`
`The present
`
`invention relates to a contact structure
`
`for electrically connecting together conducting lines formed
`
`on two opposite substrates,
`
`respectively, via conducting
`
`spacers and, more particularly,
`
`to a contact structure used
`
`in common contacts of an electrooptical device such as a
`
`liquid crystal display.
`
`Description of the Related Art
`
`In recent years,
`
`liquid crystal displays have been
`
`extensively used in the display portions of mobile
`
`intelligent terminals such as mobile computers and portable
`
`telephones
`
`including PHS
`
`(personal handyphone
`
`system).
`
`Also, active—matrix liquid crystal displays using TFTS as
`
`switching elements are well known.
`
`A liquid crystal display comprises two substrates and a
`
`liquid crystal material sealed between them. Electrodes are
`
`formed on these two substrates to set up electric fields.
`
`A
`
`desired image or pattern is displayed by controlling the
`
`magnitudes of these electric fields.
`
`In the active—matrix
`
`liquid crystal display, TFTS
`
`(thin—film transistors) are
`
`formed on one substrate to control
`
`the supply of Voltage to
`
`each pixel electrode. Therefore,
`
`this substrate is referred
`
`to as
`
`the TFT substrate.
`
`A counter electrode placed
`
`—opposite to the pixel electrodes is formed on the other
`substrate and so it is referred to as the counter substrate.
`
`In the active matrix display,
`
`an electric field is
`
`produced between each pixel electrode on the TFT substrate
`
`and the counter electrode on the counter substrate,
`
`thus
`
`Exhibit 1002, page 6
`
`

`
`providing a display.
`
`The potential at each pixel electrode
`
`on the TFT substrate is controlled by the TFT and thus is
`
`varied.
`
`On the other hand,
`
`the counter electrode on the
`
`counter substrate is clamped at a common potential.
`
`For
`
`this purpose,
`
`the counter electrode is connected with an
`
`extractor terminal via a common Contact
`
`formed on the TFT
`
`substrate.
`
`This extractor terminal
`
`is connected with an
`
`external power supply. This connection structure clamps the
`
`counter electrode at the common potential.
`
`The structure of
`
`the common contact of
`
`the prior art
`
`active—matrix liquid crystal display is next described
`
`briefly by referring to Figs. 12 — 14.
`
`Fig. 12 is a top plan view of a TFT substrate 10. This
`
`TFT substrate comprises a substrate 11 having a pixel region
`
`12,
`
`a scanning line driver circuit 13,
`
`and a signal
`
`line
`
`driver circuit 14.
`
`In the pixel region 12, pixel electrodes
`
`and TFTS connected with the pixel electrodes are arranged in
`
`rows and columns.
`
`The scanning line driver circuit
`
`13
`
`controls the timing at which each TFT is turned on and off.
`
`The signal line driver circuit 14 supplies image data to the
`
`pixel electrodes.
`
`Furthermore,
`
`there are extractor
`
`terminals 15 to supply electric power and control signals
`from the outside.
`The substrate 11 makes connection with
`
`the counter electrode at common contact portions 16a — 16d.
`
`Fig.
`
`13
`
`is a cross—sectional view of the pixel region
`
`12 and a common contact portion 16 representing the common
`
`contact portions 16a — 16d.
`
`A TFT 17 and many other TFTs
`
`(not
`
`shown) are fabricated in the pixel region 12 on the
`
`substrate 11.
`
`An interlayer dielectric film 18 is deposited
`
`on the TFT 17.
`
`A pixel electrode 19 connected with the
`
`drain electrode of the TFT 17 is formed on the interlayer
`dielectric film 18.
`
`Exhibit 1002, page 7
`
`

`
`A precursor for the source and drain electrodes of the
`
`TFT 17 is patterned into internal conducting lines 21 at the
`
`common Contact portion 16.
`
`The interlayer dielectric film
`
`18 is provided with a rectangular opening.
`
`A conducting pad
`
`22 is formed in this opening and connected with the internal
`
`conducting lines 21.
`
`The pixel electrode 19
`
`and the
`
`conducting pad 22 are patterned from the same starting film.
`
`Fig. 14 is a top plan View of the known common contact
`
`portion 16.
`
`A region located inside the conducting pad 22
`
`and indicated by the broken line corresponds to the opening
`
`formed in the interlayer dielectric film 18.
`
`As shown in Fig. 13, a counter electrode 24 consisting
`
`of a transparent conducting film is formed on the surface of
`a counter substrate 23.
`This counter electrode 24
`is
`
`opposite to the pixel electrodes 19 in the pixel region 12
`
`and to the conducting pad 22 at
`16.
`
`the common Contact portion
`
`Spherical
`
`insulating spacers 25 are located in the
`
`pixel
`
`region 12
`
`to maintain the spacing between the
`
`substrates 11 and 23.
`
`A spherical conducting spacer 26 is
`
`positioned at the common contact portion 16 and electrically
`
`connects the counter electrode 24 with the conducting pad
`
`22.
`
`The pad 22 is electrically connected with the internal
`
`in turn are electrically
`21, which.
`conducting lines
`connected with an extractor terminal 15.
`This connection
`
`structure connects the counter electrode 24 on the counter
`
`substrate 23 with the extractor terminal 15 on the substrate
`
`11.
`
`In the prior art liquid crystal display,
`
`the interlayer
`
`dielectric film 18
`
`is provided with the opening at
`
`the
`
`common contact portion 16, as shown in Fig. 13. Therefore,
`
`the cell gap Gc in the common Contact portion is almost equal
`
`Exhibit 1002, page 8
`
`

`
`to the sum of the cell gap G;
`
`in the pixel region + the film
`
`thickness t of the interlayer dielectric film 18.
`The cell gap Gp
`(also known as the cell spacing)
`
`in the
`
`pixel region 12 is determined by the insulating spacers 25.
`It
`is common practice to use standardized spacers as
`the
`
`25 have a
`insulating spacers 25 and so if the spacers
`uniform diameter,
`the cell gap Gp in the pixel region 12 is
`
`substantially uniform among liquid—crystal cells. However,
`it is difficult to avoid nonuniformity of the cell gap Ge in
`
`the common contact portion among liquid—crystal cells.
`
`The cell gap Gc
`
`in.
`
`the common contact portion is
`
`constant since the cell gap Gp is constant because of
`
`the
`
`relation described above. Therefore,
`
`the cell gap G: in the
`
`common contact portion depends only on the film thickness t
`
`to make
`of the interlayer dielectric film 18. Consequently,
`the cell gap GC uniform among liquid—crystal cells,
`it is
`
`this interlayer
`the film thickness t of
`necessary that
`dielectric film 18 be uniform among cells. However,
`this is
`
`impossible to circumvent.
`Normally,
`the common contact portions of
`
`the liquid
`
`The film thickness t
`crystal display are 2 to 4 in number.
`of
`the interlayer dielectric film 18 may differ
`from
`
`location to location on the same substrate.
`
`In this case,
`
`the film thickness t may differ among different
`
`common
`
`contacts even on the same substrate.
`
`Because of
`
`the aforementioned nonuniformity of
`
`the
`
`thickness t of.the interlayer dielectric film 18,
`
`the cell
`
`gap G: in the common contact portion differs among different
`
`cells or different
`
`common contacts.
`
`Furthermore,
`
`the
`
`nonuniformity of the cell gap Gc results in the cell gap Gp
`
`in the pixel region to be nonuniform.
`
`Exhibit 1002, page 9
`
`

`
`The cell gap Gp in the pixel region is affected more by
`
`the nonuniformity of
`
`the cell gap G:
`
`in the common contact
`
`portion as the area of
`
`the pixel region 12 becomes narrower
`
`than the area of the common contact portion. Especially,
`
`in
`
`the case of a projection display as used in a projector,
`
`the
`
`problem of above—described nonuniformity of the cell gap Gp
`
`in the pixel
`
`region becomes conspicuous, because it is a
`
`quite accurate small—sized display of about 1 to 2 inches.
`
`A standardized spacer is also used as the conducting
`
`spacer 26.
`
`The diameter of
`
`this conducting spacer 26 is
`
`determined by the diameter of the insulating spacers 25 in
`
`the pixel
`
`region 12 and by the design thickness of
`
`the
`
`interlayer dielectric film 18. Where the thickness of the
`
`interlayer dielectric film 18
`
`is much larger
`
`than the
`
`designed value,
`
`the cell gap Go in the common contact portion
`
`becomes very large. This makes it impossible to connect
`
`the
`
`counter electrode with the conducting pad well by the
`
`conducting spacer 26.
`
`In consequence,
`
`the counter electrode
`
`cannot be clamped at
`
`the common potential.
`
`As a result, a
`
`display cannot be provided.
`
`S
`
`O
`
`E INVENTION
`
`It is an object of the present
`
`invention to provide a
`
`contact structure which is free of the foregoing problems,
`
`provides less nonuniform cell gap among different cells if
`
`the
`
`thickness of
`
`the interlayer dielectric film is
`
`nonuniform across the cell or among different cells,
`
`and
`
`reduces poor electrical contacts which would normally be
`caused by conducting spacers.
`
`This object
`
`is
`
`achieved in accordance with the
`
`teachings of
`
`the invention by a _contact structure for
`
`connecting a conducting film formed on a first substrate
`
`Exhibit 1002, page 10
`
`

`
`with a conducting film formed on a second substrate opposite
`
`to the first substrate,
`
`the contact structure comprising: a
`
`Cell gap defined between the first and second substrates; a
`
`first conducting film formed on the first substrate;
`
`a
`
`dielectric film covering the first conducting film; openings
`
`formed in the dielectric film to expose parts of the first
`
`conducting film by selectively leaving the dielectric film;
`
`a second conducting film covering the dielectric film left
`
`and the openings;
`
`a third conducting film formed on the
`
`second substrate; and conducting spacers held between the
`
`first and second substrates and connecting the second and
`
`third conducting films.
`
`The
`
`second conducting film is
`
`connected with the first conducting film through the
`
`openings.
`
`The
`
`second conducting film,
`
`the conducting
`
`spacers, and the third conducting film are connected in turn
`
`on the dielectric film left.
`
`The conducting spacers
`
`maintain the cell
`substrates.
`
`gap between the
`
`first
`
`and
`
`second
`
`the invention resides in a Contact
`One embodiment of
`structure for connecting a conducting film formed on a first
`
`substrate with a conducting film formed on a
`
`second
`
`substrate opposite to the first substrate,
`
`the contact
`
`structure comprising: a cell gap defined between the first
`
`and second substrates; a first conducting film formed on the
`
`first substrate;
`
`a dielectric film covering the first
`
`conducting film; openings formed in the dielectric film to
`
`expose parts of
`
`the first conducting film;
`
`an insulator
`
`deposited on only portions of
`exposed through the openings;
`
`the first conducting film
`a second conducting film
`
`covering the openings; a third conducting film formed on the
`
`second substrate; and conducting spacers held between the
`
`first and second substrates and connecting the second and
`
`Exhibit 1002, page 11
`
`

`
`third conducting films.
`
`The
`
`second conducting film is
`
`connected with the
`
`first conducting film through the
`
`openings extending through the insulator.
`
`The
`
`second
`
`conducting film,
`
`the conducting spacers,
`
`and the third
`
`conducting film are connected in turn through the openings
`
`extending through the insulator.
`
`The conducting spacers
`
`maintain the cell
`substrates.
`
`gap between the
`
`first
`
`and second
`
`Another
`
`embodiment of
`
`the invention resides
`
`in a
`
`Contact structure for connecting a conducting film formed on
`
`a first substrate of an electrooptical device with a counter
`
`electrode formed on a second substrate opposite to the first
`
`substrate, which has pixel electrodes formed thereover,
`
`the
`
`Contact structure comprising: a cell gap defined between the
`
`first and second substrates; a first conducting film formed
`
`on the first substrate and under the pixel electrodes; an
`
`interlayer dielectric film covering the first conducting
`
`film; openings formed in the interlayer dielectric film to
`
`expose parts of
`
`the first conducting film by selectively
`
`leaving the interlayer dielectric film;a second conducting
`
`film defining the counter electrode formed on the second
`
`substrate; a third conducting film covering the interlayer
`
`dielectric film left
`
`and the openings;
`
`and conducting
`
`spacers held between the first and second substrates and
`
`connecting the second and third conducting films.
`
`The
`
`second conducting film is
`
`connected with the
`
`first
`
`conducting film through the openings.
`
`The third conducting
`
`film and the pixel electrodes are formed from a common
`
`starting film.
`
`The second conducting film,
`
`the conducting
`
`spacers, and the third conducting film are connected in turn
`
`on the dielectric film left.
`
`The conducting spacers
`
`maintain the
`
`spacing between
`
`the
`
`first
`
`and
`
`second
`
`Exhibit 1002, page 12
`
`

`
`substrates.
`
`A further embodiment of
`
`the invention resides in a
`
`Contact structure for connecting a first conducting film
`
`formed over a first substrate of an electrooptical device
`
`with.
`
`a counter electrode formed on a
`
`second substrate
`
`opposite to the first substrate, which has pixel electrodes
`
`formed thereon,
`
`the contact structure comprising: a cell gap
`
`defined between the first and second substrates;
`
`a first
`
`conducting film formed on the first substrate and under the
`
`pixel electrodes; an interlayer dielectric film covering the
`
`first conducting film; openings
`
`formed in the interlayer
`
`dielectric film to expose parts of
`
`the first conducting
`
`film;
`
`an insulator
`
`formed on selected, portions of
`
`the
`
`surface of the first conducting film extending through the
`
`openings; a second conducting film covering the openings; a
`
`third conducting film defining the counter electrode formed
`
`on the second substrate; conducting spacers held between the
`
`first and second substrates and connecting the second and
`
`third conducting films.
`
`The pixel electrodes and the second
`
`conducting film are formed from a common starting film. The
`
`second conducting film is
`
`connected with the
`
`first
`
`conducting film through the openings extending through the
`
`insulator.
`
`The
`
`second conducting film,
`
`the conducting
`
`spacers, and the third conducting film are connected in turn
`
`on the insulator formed in the openings.
`
`The conducting
`
`spacers maintain the cell gap between the first and second
`substrates.
`
`A still other embodiment of the invention resides in a
`
`contact structure for connecting a conducting film formed on
`
`a first substrate with a conducting film formed on a second
`
`substrate opposite to the first substrate,
`
`the contact
`
`structure comprising: a cell gap defined between the first
`
`Exhibit 1002, page 13
`
`

`
`and second substrates; a first conducting film formed on the
`
`first
`
`substrate;
`
`a dielectric film covering the first
`
`conducting film; openings formed in the dielectric film and
`
`exposing parts of
`
`the first conducting film;
`
`a
`
`second
`
`conducting film covering the openings;a third conducting
`
`the second substrate;a fourth conducting
`film formed over
`film formed between the second substrate and the third
`
`conducting film and in contact with the third conducting
`
`film;
`
`and conducting spacers held between the first and
`
`second substrates.
`
`The first conducting film,
`
`the second
`
`conducting film,
`
`the
`
`conducting spacers,
`
`the
`
`third
`
`conducting film,
`
`and the fourth conducting films are
`
`connected in turn through the openings.
`
`The
`
`spacers
`
`maintain the cell
`substrates.
`
`gap between the
`
`first
`
`and second
`
`Other objects and features of the invention will appear
`
`in the course of the description thereof, which follows.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`Fig.
`
`l
`
`is a
`
`fragmentary cross—sectional view’ of
`
`a
`
`common contact portion in accordance with the present
`
`invention;
`
`Figs.
`
`2A and 2B are top plan views of
`
`the common
`
`contact portion shown in Fig. 1;
`
`Fig.
`
`3
`
`is a top plan View of
`
`the TFT substrate of a
`
`liquid crystal display in accordance with Example 1 of the
`
`invention;
`
`Fig.
`
`4 is a top plan view of the counter substrate of
`
`the liquid crystal display in accordance with Example 1;
`
`Figs.
`
`5A - 5G are cross—sectional views illustrating a
`
`process sequence for fabricating the TFT substrate shown in
`
`Fig. 3:
`
`Exhibit 1002, page 14
`
`

`
`Fig.
`
`6
`
`is a fragmentary cross—sectional view of a
`
`pixel
`
`region and a common contact portion of
`
`the liquid
`
`crystal display in accordance with Example 1;
`
`Fig.
`
`7 is a cross—sectional View similar to Fig. 6, but
`
`illustrating Example 2 of the invention;
`
`Fig.
`
`8 is a cross—sectional view similar to Fig. 6, but
`
`illustrating Example 3 of the invention;
`
`Fig.
`
`9
`
`is an enlarged cross—sectional view of
`
`the
`
`common Contact portion shown in Fig. 7;
`
`Fig.
`
`10
`
`is an enlarged cross—sectional view of
`
`the
`
`common contact portion shown in Fig. 8;
`
`Fig.
`
`11
`
`is a
`
`top plan view of
`
`the common contact
`
`portion shown in Fig. 8;
`
`Fig. 12 is a top plan View of the TFT substrate of the
`
`prior art liquid crystal display;
`
`Fig. 13 is a cross—sectional View of a pixel region and
`
`a common contact portion on the TFT substrate shown in Fig.
`
`l2; and
`
`Fig.
`
`14
`
`is a top plan View of
`
`the common. contact
`
`portion shown in Fig. 13.
`
`DETAILED DESCRIPTLQN OF THE INVENTION
`
`EMBODIMENT 1
`
`The present embodiment of this invention is described
`
`by referring to Figs. 1, 2A and 2B.
`
`Fig.
`
`l is a fragmentary
`
`cross—sectional view of a comon contact portion of a liquid
`
`crystal display in accordance with the present embodiment.
`
`the TFT substrate of
`2A and 2B are top plan views of
`Figs.
`the liquid crystal display.
`The structure of a region 120
`
`shown in Fig.
`
`2A is depicted in the enlarged cross section
`
`of Fig. 1.
`
`As
`
`shown in Fig. 13,
`
`in the prior art structure,
`
`the
`
`Exhibit 1002, page 15
`
`

`
`spacers
`
`in the pixel
`
`region 12 are located over
`
`the
`
`interlayer insulating film 18 via the pixel electrode 19.
`
`However,
`
`the interlayer dielectric film 18 does not exist
`
`under
`
`the conducting pad 22 at
`
`the common contact portion
`
`16.
`
`Hence,
`
`the cell gap G:
`
`in the common contact portion
`
`depends on the thickness of
`18.
`
`the interlayer dielectric film
`
`Accordingly,
`
`in the present embodiment, an insulator,
`
`or a dielectric,
`
`is inserted under the conducting pad in the
`
`common contact portion.
`
`Conducting spacers are placed on
`
`top of the dielectric, so that the cell gap Ge in the Contact
`
`portion does not depend on the thickness of
`
`the interlayer
`
`dielectric film 18.
`
`In the present embodiment, openings are
`
`formed, selectively leaving the interlayer dielectric film
`18.
`
`In the present embodiment, as shown in Fig. 1, a first
`
`conducting film 103 is formed on a first substrate 101.
`
`A
`
`dielectric film 104 is deposited on the first conducting
`
`film 103.
`
`The dielectric film 104 is selectively left to
`
`form openings 111 that expose parts of the first conducting
`
`film 103.
`
`A second conducting film 105 is formed so as to
`
`cover the left parts of the dielectric film, 104a, and the
`
`openings 111.
`
`A third conducting film 106 is formed on the second
`
`substrate 102.
`
`Conducting spacers
`
`107 are sandwiched
`
`between the first substrate 101 and the second substrate
`
`102.
`
`In the prior art opening 110 shown in Fig.
`
`2A,
`
`the
`
`dielectric film 104 has been fully removed.
`
`In the present
`
`embodiment,
`
`the dielectric film 104 is selectively left to
`
`form the dielectric film portions 104a and the openings 111.
`
`The openings 111 expose parts of the first conducting film
`
`Exhibit 1002, page 16
`
`

`
`103.
`
`The first conducting film 103 is connected with the
`
`second conducting film 105 at these openings 111.
`
`On the first substrate 101,
`
`the left dielectric film
`
`104a is closest to the second substrate 102;
`
`therefore, on
`
`the left dielectric film 104a,
`
`the second conducting film
`
`105 formed on the first substrate electrically connects with
`
`the
`
`third conducting film 106
`
`formed on
`
`the
`
`second
`
`conducting film 102 through the conducting spacer 107, as
`
`shown in Fig. 1.
`
`In region 110,
`
`the left dielectric film 104a is closest
`
`to the second substrate;
`
`therefore,
`
`the conducting spacers
`
`107 electrically connecting the second conducting film 105
`
`with.
`
`the third conducting filnx 106 maintain the gap G
`
`between the substrates.
`
`Consequently,
`
`this gap G
`
`is
`
`the conducting spacers 107.
`dependent only on the size of
`Therefore, where the conducting spacers 107 are uniform
`
`among liquid—crystal cells,
`
`the gap G can be made uniform
`
`among cells, even if the thickness t of the dielectric film
`104 differs among cells.
`
`In the present embodiment,
`
`it is desired that the area
`
`of each opening 111 be sufficiently larger than the area
`
`occupied by each conducting spacer and offer space so that
`
`the conducting spacers can move freely, because the spacers
`
`107 existing in the openings 111 do not contribute toward
`
`maintaining the gap. Otherwise, plural conducting spacers
`
`107 would. be stacked on top of each other, making it
`
`impossible to maintain the cell gap G uniform across the
`cell.
`
`Also in the present embodiment,
`
`it is desirable that
`
`the area of the surface of each left dielectric film portion
`
`104a be sufficiently larger than the area occupied by each
`
`conducting spacer
`
`107,
`
`assuring arrangement
`
`of
`
`the
`
`Exhibit 1002, page 17
`
`

`
`conducting spacers
`
`107.
`
`If
`
`the spacers
`
`107 are not
`
`positioned over the dielectric film 104a with certainty, it
`
`will not be possible to make electrical connections between
`
`the first and second substrates.
`
`Furthermore,
`
`the gap will
`
`not be maintained.
`
`The openings 111 are formed as shown in Fig.
`
`2A in the
`
`present
`
`embodiment.
`
`The
`
`relation between
`
`the
`
`left
`
`dielectric film 104a and each opening 111 may be reversed as
`
`shown in Fig. 2B.
`
`It is that noted Fig.
`
`1
`
`is an enlarged
`
`View of the region 120 indicated by the broken line in Fig.
`28.
`
`EMBODIMENT 2
`
`The present embodiment
`
`is described by referring to
`
`Figs.
`
`1 and 2A.
`
`Fig.
`
`1
`
`is a cross—sectional View of a
`
`common contact portion of
`
`the liquid crystal display in
`
`accordance with the present embodiment.
`
`Fig.
`
`2A is a top
`
`plan View of
`
`the TFT substrate of
`
`the liquid crystal
`
`display.
`
`Fig.
`
`1 is an enlarged cross-sectional View of the
`
`region 120 indicated by the broken line in Fig. 2A.
`
`A dielectric is inserted under a conducting pad in the
`
`common contact portion,
`
`in the same manner as in Embodiment
`
`1.
`
`Conducting spacers are positioned on the dielectric.
`
`Thus,
`
`the cell gap G: in the common contact portion does not
`
`depend on the thickness of
`
`the interlayer dielectric film
`
`18.
`
`The present embodiment
`
`is characterized in that
`
`the
`
`dielectric film 18 is selectively left to form openings.
`
`In particular,
`
`in the present
`
`embodiment,
`
`the
`
`dielectric layer is form

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