Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 1 of 399 PageID #: 1854
`
`
`
`IN THE UNITED STATES DISTRICT COURT
`FOR THE DISTRICT OF DELAWARE
`
`
`GODO KAISHA IP BRIDGE 1,
`
`
`Plaintiff,
`
`
`v.
`
`OMNIVISION TECHNOLOGIES, INC.
`
`
`Defendant.
`
`)
`)
`)
`)
`) C.A. No. 16-290 (MN)
`)
`)
`)
`)
`
`
`
`
`
`APPENDIX IN SUPPORT OF THE JOINT CLAIM CONSTRUCTION BRIEF
`
`Plaintiff Godo Kaisha IP Bridge 1 and Defendant OmniVision Technologies, Inc. submit this
`
`appendix in support of the Joint Claim Construction Brief as follows:
`
`Description
`
`US Patent No. 8,084,796 B2 to Mori, et al.
`
`April 6, 2011 Amendment in ’796 patent file history
`
`App.
`
`App. 0001-0021
`
`App. 0022-0029
`
`September 11, 2011 Notice of Allowability in ’796 patent file history
`
`App. 0030-0032
`
`US Patent No. 8,106,431 B2 to Mori, et al.
`
`App. 0033-0053
`
`December 15, 2010 Amendment in ’431 patent file history
`
`App. 0054-0063
`
`May 12, 2010 Amendment in ’431 patent file history
`
`App. 0064-0073
`
`September 30, 2011 Notice of Allowability in ’431 patent file history
`
`App. 0074-0076
`
`US Patent No. 8,378,401 B2 to Mori, et al.
`
`App. 0077-0099
`
`August 27, 2012 Amendment in ’401 patent file history
`
`App. 0100-0112
`
`November 14, 2012 Notice of Allowability in ’401 patent file history
`
`App. 0113-0115
`
`US Patent No. 7,436,010 B2 to Mori, et al.
`
`May 8, 2006 Amendment in ’010 patent file history
`
`App. 0116-0137
`
`App. 0138-0156
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`1
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`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 2 of 399 PageID #: 1855
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`October 24, 2006 Amendment in ’010 patent file history
`
`App. 0157-0174
`
`March 29, 2007 Amendment in ’010 patent file history
`
`App. 0175-0187
`
`September 24, 2007 Amendment in ’010 patent file history
`
`App. 0188-0201
`
`March 21, 2008 Amendment in ’010 patent file history
`
`App. 0202-0212
`
`US Patent No. 6,160,281 to Guidash
`
`US Patent No. 6,310,366 B1 to Rhodes, et al.
`
`US Patent No. 6,794,677 to Tamaki, et al.
`
`App. 0213-0227
`
`App. 0228-0243
`
`App. 0244-0264
`
`January 22, 2004 Amendment in ’677 patent file history
`
`App. 0265-0269
`
`US Patent No. 6,709,950 B2 to Segawa, et al.
`
`App. 0270-0308
`
`January 15, 2003 Amendment in ’950 patent file history
`
`App. 0309-0326
`
`October 24, 2003 Amendment in ’950 patent file history
`
`App. 0327-0338
`
`November 6, 2003 Notice of Allowability in ’950 patent file history
`
`App. 0339-0340
`
`US Patent No. 6,538,324 B1 to Tagami, et al.
`
`App. 0341-0371
`
`January 28, 2002 Amendment in ’324 patent file history
`
`App. 0372-0378
`
`June 11, 2002 Response/Remarks in ’324 patent file history
`
`App. 0379-0382
`
`August 9, 2002 Amendment in ’324 patent file history
`
`App. 0383-0390
`
`September 10, 2002 Notice of Allowability in ’324 patent file history
`
`App. 0391-0393
`
`IEEE Standard Dictionary of Electrical and Electronics Terms, 1988
`
`App. 0394-0409
`
`McGraw-Hill Dictionary of Electrical and Computer Engineering, 2004
`
`App. 0410-0423
`
`Declaration of Samuel E. Joyner
`
`IEEE 1984 Solid State Sensor Conference 34
`
`Webster’s Desk Dictionary, 2nd Edition, 2001
`
`Oxford English Reference Dictionary, 2nd Edition
`
`US Patent No. 5,942,774 to Isogai, et al.
`
`2
`
`App. 0424-0427
`
`App. 0428-0435
`
`App. 0436-0438
`
`App. 0439-0441
`
`App. 0442-0473
`
`

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`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 3 of 399 PageID #: 1856
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`Exhibit 4 – ‘950 Patent – OV8858 – Slide 7
`
`Exhibit 5 – ‘677 Patent – OV5650 – Slide 7
`
`App. 0474
`
`App. 0475
`
`09/26/18 Declaration of Jack Lee, Ph.D. in Support of OmniVision’s
`Answering Claim Construction Brief
`
`App. 0476-0492
`
`Curriculum Vitae of Jack C. Lee, Ph.D.
`
`App. 0493-0553
`
`08/23/18 IP Bridge’s Supplemental Markman Proposals
`
`App. 0554-0556
`
`08/30/18 OmniVision’s Supplemental Claim Construction
`
`App. 0557-0562
`
`09/28/18 Declaration of Woodward Yang, Ph.D. in Support of OmniVision’s
`Answering Claim Construction Brief
`
`App. 0563-0586
`
`Curriculum Vitae of Woodward Yang, Ph.D.
`
`09/28/18 Declaration of Jose Villarreal in Support of OmniVision’s
`Answering Claim Construction Brief
`
`App. 0587-0593
`
`App. 0594-0597
`
`10/05/18 Declaration of Albert Theuwissen in Support of IP Bridge’s Reply
`Claim Construction Brief
`
`App. 0598-0659
`
`10/11/18 Declaration of Jack Lee, Ph.D. in Support of OmniVision’s Sur-
`Reply Claim Construction Brief
`
`App. 0660-0791
`
`10/12/18Declaration of Erik Carlson in Support of OmniVision’s Sur-Reply
`Claim Construction Brief
`
`App. 0792-0793
`
`3
`
`

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`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 4 of 399 PageID #: 1857
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`Respectfully Submitted,
`
`/s/ Stamatios Stamoulis
`Stamatios Stamoulis (#4606)
`Richard C. Weinblatt (#5080)
`STAMOULIS & WEINBLATT LLC
`Two Fox Point Centre
`6 Denny Road, Suite 307
`Wilmington, DE 19809
`Tel: (302) 999-1540
`stamoulis@swdelaw.com
`weinblatt@swdelaw.com
`
`Attorneys for Plaintiff Godo Kaisha
`IP Bridge 1
`
`
`
`
`
`
`
`
` ** Reflects admission pro hac vice
`
`
`
` SHORE CHAN DEPUMPO LLP
`Michael W. Shore** (mshore@shorechan.com)
`Alfonso Garcia Chan** (achan@shorechan.com)
`Joseph F. DePumpo** (jdepumpo@shorechan.com)
`Christopher L. Evans** (cevans@shorechan.com)
`Andrew M. Howard** (ahoward@shorechan.com)
`Ari B. Rafilson** (arafilson@shorechan.com)
`William D. Ellerman** (wellerman@shorechan.com)
`Samuel E. Joyner** (sjoyner@shorechan.com)
`Chijioke E. Offor** (coffor@shorechan.com)
`901 Main Street, Suite 3300
`Dallas, TX 75202
`Tel: (214) 593-9110
`
`OHASHI & HORN LLP
`Hiromasa Ohashi** (ohashi@ohashiandhorn.com)
`Jeff J. Horn, Jr.** (horn@ohashiandhorn.com)
`Cody A. Kachel** (ckachel@ohashiandhorn.com)
`1120 Avenue of the Americas, 4th Floor
`New York, NY 10036
`Tel: (214) 743-4170
`
`Attorneys for Plaintiff Godo Kaisha IP Bridge 1
`
`
`
`4
`
`

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`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 5 of 399 PageID #: 1858
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`Of Counsel:
`
`
`Edward G. Poplawski
`Erik J. Carlson
`WILSON SONSINI GOODRICH &
`ROSATI
`
`633 West Fifth Street, Suite 1550
`Los Angeles, California 90071
`Telephone:
`(323) 210-2901
`Facsimile:
`(866) 974-7329
`E-Mail:
`epoplawski@wsgr.com
`
`
`ecarlson@wsgr.com
`
`James C. Yoon
`WILSON SONSINI GOODRICH &
`ROSATI
`Professional Corporation
`650 Page Mill Road
`Palo Alto, California 94304
`Telephone:
`(650) 493-9300
`Facsimile:
`(650) 493-6811
`Email:
`jyoon@wsgr.com
`
`Jose C. Villarreal
`Henry Pan
`WILSON SONSINI GOODRICH &
`ROSATI
`900 S. Capital of Texas Highway
`Las Cimas IV, 5th Floor
`Austin, TX 78746
`Telephone:
`(512) 338-5400
`Facsimile:
`(512) 338-5499
`Email:
`jvillarreal@wsgr.com
`
`
`hpan@wsgr.com
`
`
`
`
`
`
`
`
`
`/s/ Bindu A. Palapura
`
`
`David E. Moore (#3983)
`Bindu A. Palapura (#5370)
`Stephanie O’Byrne (#4446)
`POTTER ANDERSON & CORROON LLP
`Hercules Plaza
`1313 North Market Street, 6th Floor
`Wilmington, Delaware 19801
`Telephone: (302) 984-6000
`Facsimile: (302) 658-1192
`E-Mail: dmoore@potteranderson.com
` bpalapura@potteranderson.com
` sobyrne@potteranderson.com
`
`Attorneys for Defendant
`OMNIVISION TECHNOLOGIES, INC.
`
`
`
`
`
`
`5
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 6 of 399 PageID #: 1859
`
`I 1111111111111111 11111 1111111111 1111111111 111111111111111 111111111111111111
`US008084 796B2
`
`c12) United States Patent
`Mori et al.
`
`(IO) Patent No.:
`(45) Date of Patent:
`
`US 8,084,796 B2
`Dec. 27, 2011
`
`(54) SOLID STATE IMAGING APPARATUS,
`METHOD FOR DRIVING THE SAME AND
`CAMERA USING THE SAME
`
`(75)
`
`Inventors: Mitsuyoshi Mori, Kyoto (JP); Takumi
`Yamaguchi, Kyoto (JP); Takahiko
`Murata, Osaka (JP)
`
`(73) Assignee: Panasonic Corporation, Osaka (JP)
`
`( *) Notice:
`
`Subject to any disclaimer, the term ofthis
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 465 days.
`
`(21) Appl. No.: 12/202,804
`
`(22) Filed:
`
`Sep.2,2008
`
`(65)
`
`Prior Publication Data
`
`US 2009/0002538 Al
`
`Jan. 1, 2009
`
`Related U.S. Application Data
`
`(63) Continuation of application No. 10/706,918, filed on
`Nov. 14, 2003, now Pat. No. 7,436,010.
`
`(30)
`
`Foreign Application Priority Data
`
`Feb. 13, 2003
`
`(JP) ................................. 2003-034692
`
`(51)
`
`Int. Cl.
`(2006.01)
`HOJL 31/062
`(52) U.S. Cl. .. 257/292; 257/223; 257/445; 257/E27.139
`(58) Field of Classification Search .................. 257/223,
`257/258,291,292,443-445
`See application file for complete search history.
`
`(56)
`
`References Cited
`
`U.S. PATENT DOCUMENTS
`5,708,263 A
`1/1998 Wong
`5,955,753 A *
`9/ 1999 Takahashi ..................... 257 /292
`6,091,449 A
`7/2000 Matsunaga et al.
`
`6,160,281 A * 12/2000 Guidash ........................ 257/292
`6,310,366 Bl
`10/2001 Rhodes et al.
`6,352,869 Bl
`3/2002 Guidash
`6,541,794 Bl
`4/2003 Patterson et al.
`(Continued)
`
`EP
`
`FOREIGN PATENT DOCUMENTS
`0 845 900 Al
`6/1998
`(Continued)
`
`OTHER PUBLICATIONS
`
`Japanese Decision of Rejection, with partial English translation,
`issued in Japanese Patent Application No. 2006-343810, mailed Mar.
`9, 2010.
`
`(Continued)
`
`Primary Examiner - Wael Fahmy
`John C Ingham
`Assistant Examiner -
`(74) Attorney, Agent, or Firm -McDermott Will & Emery
`LLP
`
`(57)
`
`ABSTRACT
`A solid state imaging apparatus includes: a plurality of pho(cid:173)
`toelectric conversion cells each including a plurality of pho(cid:173)
`toelectric sections arranged in an array of at least two rows
`and two columns; a plurality of floating diffusion sections
`each being connected to each of ones of the photoelectric
`sections which are included in the same row of each said
`photoelectric conversion cell via each of a plurality of transfer
`transistors, and being shared by said ones of the photoelectric
`sections; a plurality of read-out lines each being selectively
`connected to at least two of the transfer transistors; and a
`plurality of pixel amplifier transistors each detecting and
`outputting the potential of each said the floating diffusion
`section. Charges of the photoelectric conversion sections
`each being connected to one of the read-out lines and being
`read out by the transfer transistors are read out by different
`floating diffusion sections.
`
`4 Claims, 10 Drawing Sheets
`
`41
`
`SCLL - - - - - - ' - - - - - - - - - , - - - - - ,
`LGCELL -~ - - - - - - - - - t t - - - t t -
`
`READ ------'-----'--t--'~1-----''-'-i-f---+--+
`READ -~--i--t----;,.,-----t----;-,c-i--+--+
`
`91
`READ -----'----'--+----''-'-t--'"-H--+--+
`READ -~--i--t-----c~t-----co,;+-+--+
`39
`38
`
`31
`
`App. 0001
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 7 of 399 PageID #: 1860
`
`US 8,084,796 B2
`Page 2
`
`U.S. PATENT DOCUMENTS
`6,552,323 B2
`4/2003 Gui dash et al.
`6,657,665 Bl
`12/2003 Guidash
`6,977,684 Bl* 12/2005 Hashimoto et al .
`2001/0052941 Al
`12/2001 Matsunaga et al.
`2002/0018131 Al
`2/2002 Kochi
`2002/0024068 Al
`2/2002 Shinohara
`2002/0145582 Al
`10/2002 Y arnazaki et al.
`2006/0001751 Al
`1/2006 Abe et al.
`
`........... 348/294
`
`EP
`EP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`
`FOREIGN PATENT DOCUMENTS
`6/1999
`0 926 738 A2
`11/1999
`0 954 032 A2
`2/1997
`09-046596
`4/1999
`11-097662
`7 /1999
`11-195776
`11/1999
`11-312800
`2000-12821 A
`1/2000
`2/2000
`2000-059697
`2000-78475 A
`3/2000
`5/2000
`2000-152086
`8/2000
`2000-224482
`2000-224482 A
`8/2000
`10/2001
`2001-298177 A
`2001-326856 A
`11/2001
`3/2002
`2002-077731
`
`JP
`KR
`WO
`
`2004-172950
`2000-0052598
`WO 97/07630
`
`6/2004
`8/2000
`2/1997
`
`OTHER PUBLICATIONS
`
`Japanese Decision to Dismiss the Amendment, with partial English
`translation, issued in Japanese Patent Application No. 2006-343810,
`mailed Mar. 9, 2010.
`English translation of Japanese Office Action issued in Japanese
`Patent Application No. 2006-343810, mailed Oct. 13, 2009.
`United States Office Action issued in U.S. Appl. No. 12/178,250
`dated Feb. 14, 2011.
`United States Office Action issued in U.S. Appl. No. 12/178,250
`dated Sep. 17, 2010.
`White et al., "Characterization of Surface Channel CCD Image
`Arrays at Low Light Levels", IEEE Journal of Solid State Circuits,
`vol. sc-9, No. 1, Feb. 1974, pp. 1-13.
`Japanese Office Action issued in corresponding Japanese Patent
`Application No. JP 2004-034818, dated Oct. 24, 2006.
`Chinese Office Action Issued in corresponding Chinese Patent Appli(cid:173)
`cation No. CN 200380100976.6, dated Feb. 2, 2007.
`United States Notice of Allowance issued in U.S. Appl. No.
`12/178,250 dated Sep. 30, 2011.
`
`* cited by examiner
`
`App. 0002
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 8 of 399 PageID #: 1861
`
`U.S. Patent
`
`Dec. 27, 2011
`
`Sheet 1 of 10
`
`US 8,084,796 B2
`
`41
`SCLL - - - - ' - - - - - - - - - - - - -~ - - - , (cid:173)
`LGCELL---.--------------++-++--
`r .. - .. --· - ··-· --· --- ·-· -----
`11
`
`FIG. 1
`
`40
`
`25 26
`
`FOURTH ROW
`
`35
`READ - - -~ - - -+ - - - -+ - - . . . - t - - - -+ - - - - - t (cid:173)
`READ - - - . - - - - - - - - . - - - - -+ - - - , - - -+ - - -+ - - - -+ -
`- 92
`
`34
`
`THIRD ROW
`
`37
`RSCELL--____,l(.___==-_
`
`SECOND ROW
`
`r··-··-··-··-··
`
`-------·-----
`
`1
`
`I
`
`I
`
`FIRST ROW
`
`1
`
`33
`READ - - - - ' - - - - - - -+ - - - - - - - - - . . - - . - t - - -+ - - - -+(cid:173)
`READ ----,---l.....---..-.----+--........+---+---+-
`32 ~
`
`· 91
`
`39
`38
`
`RSCELL--___L----
`
`ROW DIRECTION
`
`I
`
`~ COLUMN DIRECTION
`
`VO
`
`VO
`
`VDDCELL
`
`App. 0003
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 9 of 399 PageID #: 1862
`
`FIG.2
`
`1H
`
`2H
`
`LGCELL - - - - - - - - - - - - - - 1 - - - - - - - - - - - - - - (CONSTANT VALUE)
`
`SCELL - - - - - - - - - - - - - - -+ - - - - - - - - - - - - - (GND)
`VDDCELL - -~
`
`RSCELL - - - - - - '
`lst.READ32 - - - - -~
`2nd.READ33 - - - - - - - - - - - - - - - - - -~
`1st. VO38
`
`2nd. VO39
`
`RESET LEVEL
`
`SIGNAL STORAGE LEVEL
`
`~
`00 .
`
`~
`~
`~
`
`~ = ~
`
`c ('D
`
`~
`N
`~-....J
`N
`
`0 ....
`....
`
`('D
`('D
`
`rJJ =(cid:173)
`.....
`N
`0 ....
`....
`
`0
`
`d r.,;_
`00 = 00
`
`~
`~
`\0
`
`0--, = N
`
`App. 0004
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 10 of 399 PageID #: 1863
`
`U.S. Patent
`
`Dec. 27, 2011
`
`Sheet 3 of 10
`
`US 8,084,796 B2
`
`FIG.3
`
`41
`SCLL _ __ ,__ __________ ,.__
`LGCELL---------------++---1--1--
`
`40
`
`25 26
`
`FOURTH ROW
`
`35
`READ ---l..........;.----.......----1---.;.......i..._-+---1-
`READ - - - r - - , - - - - -+ - - - - -+ - - - -+ - -+ - - - -+ -
`- 92
`
`34 ~
`I
`
`THIRD ROW
`
`37
`RSCELL--__,(_-------===-------1
`
`r··------------
`
`-------------
`1
`
`SECOND ROW
`
`----· · 91
`READ-----'----,-----+----+----.--+---(cid:173)
`READ ----,----,--------+----+----
`
`39
`38
`
`VO
`
`VO
`
`VDDCELL
`
`RSCELL--~-------1
`
`ROW DIRECTION
`
`I
`
`--"7" COLUMN DIRECTION
`
`App. 0005
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 11 of 399 PageID #: 1864
`
`U.S. Patent
`
`Dec. 27, 2011
`
`Sheet 4 of 10
`
`US 8,084,796 B2
`
`FIG.4
`
`41
`SCLL ---------''--------------------,..---,,-(cid:173)
`LGCELL--~------------++--1-1--
`
`40
`FOURTH ROW
`35
`READ ----'...........;...-----+-------+-----i-+-----1----+(cid:173)
`READ - - - - - . - - - - -+ - - - - -+ - - -1
`-+---+----+(cid:173)
`---=-9
`~ --··- .. __ --·- ·92
`I
`
`25 26
`
`THIRD ROW
`
`37
`RSCELL--_____,_<----==--___,
`
`r··-··-··-··-··
`
`I
`
`I
`
`53
`
`SECOND ROW
`51
`··-. -··- ·91
`READ ---+---'------+-----+-----i-t---+---+---t-(cid:173)
`SO
`READ - -~ - -+ - - -+ - - - - -+ - -~ t - - - - -+ - - - t - -
`32 l
`l
`36 ~---··-··-··-··-··-··-··-··- f------L-+31
`
`FIRST ROW
`
`38
`
`RSCELL--____,_--------i
`
`39
`
`50
`
`so
`
`ROW DIRECTION
`
`i --3'> COLUMN DIRECTION
`
`VDDCELL
`
`VO
`
`VO
`
`App. 0006
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 12 of 399 PageID #: 1865
`
`FIG.5
`
`1H
`
`2H
`
`~
`00 .
`
`~
`~
`~
`
`~ = ~
`
`c ('D
`
`~
`N
`~-....J
`N
`
`0 ....
`....
`
`(CONSTANT VALUE)
`
`(GND)
`(CONSTANT VALUE)
`
`11
`
`-
`
`11
`
`SIGNAL STORAGE LEVEL
`'
`
`11
`
`-
`
`I
`SIGNAL STORAGE LEVEL
`'
`
`RESET LEVEL
`
`RESET LEVEL
`
`('D
`
`rJJ =-('D
`.....
`Ul
`0 ....
`....
`
`0
`
`d r.,;_
`00 = 00
`
`~
`~
`\0
`
`0--, = N
`
`LGCELL
`
`SCELL
`VDDCELL
`
`RSCELL
`
`lst.READ32
`
`2nd.READ33
`
`VO38,39
`
`S050,51
`
`App. 0007
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 13 of 399 PageID #: 1866
`
`SCLL
`LGCELL
`
`FOURTH ROW
`
`READ
`RSCELL
`READ
`
`THIRD
`ROW
`
`SECOND ROW
`
`READ
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`
`FIRST ROW
`
`FIG.6
`
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`
`ROW DIRECTION
`
`r
`
`~ COLUMN DIRECTION
`
`App. 0008
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 14 of 399 PageID #: 1867
`
`U.S. Patent
`
`Dec. 27, 2011
`
`Sheet 7 of 10
`
`US 8,084,796 B2
`
`,\
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`
`App. 0009
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 15 of 399 PageID #: 1868
`
`U.S. Patent
`
`Dec. 27, 2011
`
`Sheet 8 of 10
`
`US 8,084,796 B2
`
`FIG.8
`
`- -+ - - - - - - -+ - -
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`5
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`
`App. 0010
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 16 of 399 PageID #: 1869
`
`FIG.9
`
`FD SECTION
`
`PIXEL AMPLIFIER
`
`RESET GATE
`
`APERTURE RATIO
`
`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
`
`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
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`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
`
`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
`
`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
`
`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
`
`A REGION, B REGION, C REGION
`
`D REGION, B REGION, E REGION
`
`10%
`
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`
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`00 = 00
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`~
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`
`0--, = N
`
`App. 0011
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 17 of 399 PageID #: 1870
`
`U.S. Patent
`
`Dec. 27, 2011
`
`Sheet 10 of 10
`
`US 8,084,796 B2
`
`FIG. 10
`PRIOR ART
`
`141
`
`140
`
`134
`
`RESET--~)----
`137
`
`123
`
`125
`
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`150
`152
`
`131
`
`138
`
`VDD
`
`VO
`
`App. 0012
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 18 of 399 PageID #: 1871
`
`US 8,084,796 B2
`
`1
`SOLID STATE IMAGING APPARATUS,
`METHOD FOR DRIVING THE SAME AND
`CAMERA USING THE SAME
`
`2
`to ensure a sufficiently large area of opening of the PD section
`101 and also to reduce the size of the photoelectric conversion
`cell.
`
`RELATED APPLICATIONS
`
`SUMMARY OF THE INVENTION
`
`This application is a Continuation of U.S. application Ser.
`No.10/706,918, filedNov.14, 2003 now U.S. Pat. No. 7,436,
`010, claiming priority of Japanese Application No. 2003-
`034692, filed Feb. 13, 2003, the entire contents of each of
`which are hereby incorporated by reference.
`
`BACKGROUND OF THE INVENTION
`
`10
`
`It is an object of the present invention to solve the above(cid:173)
`described problems and, to reduce, in a FDA (floating diffu(cid:173)
`sion amplifier) system, the size of a photoelectric conversion
`cell while increasing an aperture area of a photoelectric con-
`version section.
`To achieve the above-described object, the present inven(cid:173)
`tion has been deviced, so that a configuration in which a
`transistor and an interconnect can be shared by a plurality of
`photoelectric conversion (PD) sections is used in a solid state
`imaging apparatus.
`Specifically, a first solid sate imaging apparatus includes: a
`plurality of photoelectric conversion cells each including a
`20 plurality of photoelectric sections arranged in an array of at
`least two rows and two colunms; a plurality of floating diffu(cid:173)
`sion sections each being connected to each of ones of the
`photoelectric sections which are included in the same row of
`each said photoelectric conversion cell via each of a plurality
`25 of transfer transistors, and being shared by said ones of the
`photoelectric sections which are included in the same row; a
`plurality of read-out lines each being selectively connected to
`at least two of the transfer transistors; and a plurality of pixel
`amplifier transistors each detecting and outputting the poten-
`30 tial of each said the floating diffusion section. In the appara(cid:173)
`tus, respective charges of the photoelectric conversion sec(cid:173)
`tions each being connected to one of the read-out lines and
`being read out by the transfer transistors are read out by
`different floating diffusion sections.
`In the first solid imaging apparatus, each said floating
`diffusion section is shared by ones of the photoelectric con(cid:173)
`version sections included in the same row, and furthermore,
`respective charges of the photoelectric conversion sections
`each being connected to one of the read-out lines and being
`40 read out by the transfer transistors are read out by different
`floating diffusion sections. Thus, the numberofread-out lines
`per photoelectric conversion cell becomes 0.5. As a result, the
`aperture ratio of the photoelectric conversion sections to the
`photoelectric conversion cell can be increased and also the
`45 size of the photoelectric cell can be reduced.
`In the first solid state imaging apparatus, it is preferable
`that each said read-out line is connected to a transfer transistor
`connected to ones of the photoelectric conversion sections
`which are included in the same colunm. Thus, charges of at
`least two of said ones of the photoelectric conversion sections
`which are included in the same column can be output through
`a floating diffusion section, a pixel amplifier transistor and a
`signal line.
`Moreover, in the first solid state imaging apparatus, it is
`preferable that wherein each said read-out line is connected to
`a transfer transistor connected to ones of the photoelectric
`conversion sections which are included in two adjacent col(cid:173)
`unms, respectively. Thus, charges of at least two of said ones
`of the photoelectric conversion sections which are included in
`two adjacent colunms, respectively, can be output through a
`floating diffusion section, a pixel amplifier transistor and a
`signal line.
`In the first solid state imaging apparatus, it is preferable
`that each said floating diffusion section and each said pixel
`amplifier transistor are shared by a row which is read out by a
`transfer transistor connected to one of the read-out line and
`another row which is adjacent to the read-out row.
`
`15
`
`The present invention relates to a solid state imaging appa(cid:173)
`ratus in which a plurality of photoelectric conversion sections
`are arranged in an array, a method for driving the solid state
`imaging apparatus and a camera using the solid state imaging
`apparatus.
`FIG. 10 is a diagram illustrating a general circuit configu(cid:173)
`ration for a MOS type image sensor, i.e., a known solid
`imaging apparatus (e.g., see M. H. White, D.R. Lange, F. C.
`Blaha and I. A. Mach, "Characterization of Surface Channel
`CCD Image Arrays at Low Light Levels", IEEE J. Solid-State
`Circuits, SC-9, pp. 1-13 (1974)).
`As shown in FIG. 10, a photoelectric conversion cell
`includes a photodiode (PD) section 101, a transfer transistor
`113, a reset transistor 122, a pixel amplifier transistor 123, a
`select transistor 152, a floating diffusion (FD) section 109, a
`power supply line 131 and an output signal line 138.
`The PD section 101 of which the anode is grounded is
`connected to the drain of the transfer transistor 113 at the
`cathode. The source of the transfer transistor 113 is connected
`to the respective sources of the FD section 109, the gate of the 35
`pixel amplifier transistor 123 and the source of the reset
`transistor 122. The gate of the transfer transistor 113 is con(cid:173)
`nected to a read-out line 134. The reset transistor 122 which
`receives a reset signal 137 at the gate includes a drain con(cid:173)
`nected to the drain of the pixel amplifier transistor 123 and the
`power supply line 131. The source of the pixel amplifier
`transistor 123 is connected to the drain of the select transistor
`152. The select transistor 152 receives a selection signal SEL
`at the gate and includes a source connected to the output
`signal line 138.
`The output signal line 138 is connected to the source of a
`load gate 125. The gate of the load gate 125 is connected to a
`load gate line 140 thereof and the drain is connected to a
`source power supply line 141.
`In this configuration, a predetermined voltage is applied to 50
`the load gate line 140 so that the load gate 125 becomes a
`constant current source, and then the transfer transistor 113 is
`temporarily turned ON to transfer charge photoelectric-con(cid:173)
`verted in the PD section 101 to the FD section 109. Then, the
`potential of the PD section 101 is detected by the pixel ampli- 55
`fier transistor 123. In this case, by turning the select transistor
`152 ON, signal charge can be detected through the output
`signal line 138.
`However, in the known solid state apparatus, four transis(cid:173)
`tors 113, 122, 123 and 152 and five lines 131, 134, 137, 138 60
`and 150 are required for total in each photoelectric conversion
`cell. Accordingly, the areas of transistor and line sections in a
`cell are increased. For example, if a photoelectric conversion
`cell is designed, assuming that the area of a photoelectric
`conversioncellis4.1 µmx4.1 µm, withthedesignruleof0.35 65
`µm, the aperture ratio of the PD section 101 to the photoelec(cid:173)
`tric conversion cell is only about 5%. Therefore, it is difficult
`
`App. 0013
`
`

`

`Case 1:16-cv-00290-MN Document 103-1 Filed 10/17/18 Page 19 of 399 PageID #: 1872
`
`US 8,084,796 B2
`
`3
`It is preferable that the first solid state imaging apparatus
`further includes: a signal line for outputting a signal from
`each said pixel amplifier transistor to the outside; and a select
`transistor which is provided between the pixel amplifier tran(cid:173)
`sistor and the signal line to selectively conduct between the
`pixel amplifier transistor and the signal line. Thus, charges
`from one of the photoelectric conversion sections which are
`included in adjacent rows, respectively, can be detected
`through a shared signal line.
`In the first solid state imaging apparatus, it is preferable 10
`that each said floating diffusion section and each said pixel
`amplifier transistor are shared by photoelectric conversion
`sections which are adjacent to each other in the row direction
`or in the colunm direction. Thus, the aperture ratio of the
`photoelectric conversion sections to the photoelectric conver(cid:173)
`sion cell can be increased and also the size of the photoelectric
`cell can be reduced.
`In the first solid state imaging apparatus, it is preferable
`that in each said floating diffusion section, a reset section for
`resetting charge stored in the floating diffusion section is
`provided. Thus, it is possible to stop, after charge read out
`from a photoelectric conversion section has been detected by
`an amplifier, detection of charge by the pixel amplifier tran(cid:173)
`sistor.
`In the first solid state imaging apparatus, it is preferable
`that the photoelectric conversion sections are arranged so as
`to be spaced apart from one another by a certain distance in
`the row direction or in the column direction. Thus, a high
`quality image can be obtained from signals read out from the
`photoelectric conversion sections.
`It is preferable that the first solid state imaging apparatus
`further includes a signal processing circuit for processing an
`output signal from each said pixel amplifier transistor. Thus,
`a high quality image can be obtained.
`In the first solid state imaging apparatus, it is preferable 35
`that the photoelectric conversion cells are separated from one
`another by a power supply line which also functions as a
`light-shielding film. Thus, a power supply line can be formed
`in a different interconnect layer from an interconnect layer in
`which an output signal line connected to a pixel amplifier 40
`transistor is formed. Therefore, the size of a photoelectric
`conversion cell can be further reduced and also the aperture
`area can be increased.
`A method for driving a solid state imaging apparatus
`according to the present invention is directed to a method for 45
`driving the first solid state imaging apparatus of the present
`invention and includes: a first step of transferring, in each said
`photoelectric conversion cell, by a first read-out line of the
`read-out lines, signal charges from ones of the photoelectric
`conversion sections which are not included in the same row 50
`but included in two colunms adjacent to each other, respec(cid:173)
`tively, to one of the floating diffusion sections connected to
`said ones of the photoelectric conversion sections; and a
`second step of transferring, by a second read-out line of the
`read-out lines, signal charges from ones of the photoelectric 55
`conversion sections which have not been read out in the first
`step to the same floating diffusion section connected to said
`ones of the photoelectric conversion sections as that in the
`first step.
`A second solid state imaging apparatus according to the 60
`present invention includes: a plurality of photoelectric con(cid:173)
`version cells each including a plurality of photoelectric sec(cid:173)
`tions arranged in an array of at least two rows; a plurality of
`floating diffusion sections each being connected, via each of
`a plurality of transfer transistors, to each of ones of the pho- 65
`toelectric conversion sections which are included in adjacent
`rows, respectively, and which are included in the same col-
`
`4
`unm in each said photoelectric conversion cell, and each
`being shared by said ones of the photoelectric conversion
`sections; a plurality of read-out lines each being connected to
`one of the transfer transistors and independently reading out
`charge from each of said ones of the photoelectric conversion
`sections to each said floating diffusion section shared by said
`ones of the photoelectric conversion sections; and a plurality
`of pixel amplifier transistors each detecting and outputting
`the potential of the floating diffusion section.
`In the second solid state apparatus, each said floating dif-
`fusion section is connected to some of the plurality of transfer
`transistors, is shared by ones of the photoelectric conversion
`sections which are included in adjacent rows, respectively,
`and which are included in the same. Furthermore, some of the
`15 plurality of read-out lines each independently reading out
`charge from each of said ones of the photoelectric conversion
`sections are connected to each said transfer transistor. Thus, a
`row-select transistor which is usually provided is not needed.
`As a result, the number of interconnects per photoelectric
`20 conversion section is reduced from 5 to 3.5. Therefore, the
`area of the photoelectric conversion cell itself can be reduced
`while increasing the area of the photoelectric sections.
`It is preferable that the second solid state imaging appara(cid:173)
`tus further includes a reset transistor for resetting charge
`25 stored in each said floating diffusion section and the drain of
`the reset transistor is connected to the drain of the pixel
`amplifier transistor so that a drain is shared by the reset
`transistor and the pixel amplifier transistor. Thus, an intercon(cid:173)
`nect connecting between the drain of the reset transistor and
`30 the drain of the pixel amplifier transistor can be shared.
`Accordingly, the number of interconnects per the photoelec(cid:173)
`tric conversion cell can be further reduced.
`In the second solid state imaging apparatus, it is preferable
`that each said floating diffusion section is arranged between
`ones of the photoelectric conversion sections which are adja(cid:173)
`cent to each other in the row direction in each said photoelec-
`tric conversion cell. Thus, the area of floating diffusion sec(cid:173)
`tions per photoelectric conversion cell can be reduced.
`In the second solid state imaging a