`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 1 of 10 PageID #: 360
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`EXHIBIT T
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 2 of 10 PageID #: 361
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`11. A MOS (metal-oxide-semiconductor) image pick-up device comprising:
`(A) a semiconductor substrate,
`(B) an imaging region formed on the semiconductor substrate by arraying (C) plural unit pixels, and
`(D) a peripheral circuit region comprising (E) a driving circuit for operating the imaging region formed on the semiconductor
`substrate;
`where each of (C) the unit pixels comprises: (F) a photodiode, (G) MOS transistors, and (H) a first device-isolation potion, and
`(D) the peripheral circuit region comprises (I) a second device-isolation portion for isolating devices in (E) the driving circuit,
` wherein the following are satisfied:
` I. (H) the first device-isolation portion has a structure comprising:
` A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50
`nm, or
` B. (J) an impurity diffusion region formed within (A) the substrate directly under the substrate surface, and
` II. (H) the first device-isolation portion and (I) the second device-isolation portion have respective structures selected separately
`so as to be different from each other.
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`SUBJECT TO CHANGE
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`1
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 3 of 10 PageID #: 362
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`Claim 11
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`A MOS (metal-oxide-semiconductor) image pick-up device comprising:
`(A) a semiconductor substrate,
`(B) an imaging region formed on the semiconductor substrate by arraying (C) plural unit pixels, and
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`(C)
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`(A)
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`SUBJECT TO CHANGE
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`2
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 4 of 10 PageID #: 363
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`Claim 11
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`A MOS (metal-oxide-semiconductor) image pick-up device comprising:
`(A) a semiconductor substrate,
`(B) an imaging region formed on the semiconductor substrate by arraying (C) plural unit pixels, and
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` (B)
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`SUBJECT TO CHANGE
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`3
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 5 of 10 PageID #: 364
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`Claim 11
`
`A MOS (metal-oxide-semiconductor) image pick-up device comprising:
`(A) a semiconductor substrate,
`(B) an imaging region formed on the semiconductor substrate by arraying (C) plural unit pixels, and
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`(C)
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`SUBJECT TO CHANGE
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`4
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 6 of 10 PageID #: 365
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`Claim 11
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`(D) a peripheral circuit region comprising (E) a driving circuit for operating the imaging region formed on the semiconductor
`substrate;
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`(D)
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`(E)
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`SUBJECT TO CHANGE
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`5
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 7 of 10 PageID #: 366
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`Claim 11
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`where each of (C) the unit pixels comprises: (F) a photodiode, (G) MOS transistors, and (H) a first device-isolation potion, and
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`(Plane: gate level)
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`(C)
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`(G)
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`(F)
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`(H)
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`(Cross section: b-b’)
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`(C)
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`(H)
`(G)
`(F)
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`(H)
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`b
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`b’
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`(G)
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`(F)
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`(C)
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`(H)
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`SUBJECT TO CHANGE
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`6
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 8 of 10 PageID #: 367
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`Claim 11
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`(D) the peripheral circuit region comprises (I) a second device-isolation portion for isolating devices in (E) the driving circuit,
`wherein the following are satisfied:
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`
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` (I)
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`(D)
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`SUBJECT TO CHANGE
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`7
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 9 of 10 PageID #: 368
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`Claim 11
`
` I. (H) the first device-isolation portion has a structure comprising:
` A. an electrically insulating film formed on a surface of the substrate so as to erode the substrate to a depth in a range of 1 nm to 50 nm, or
` B. (J) an impurity diffusion region formed within (A) the substrate directly under the substrate surface, and
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`(Plane: gate level)
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`(Cross section: b-b’)
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`(C) the unit pixels
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`(H)
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`(J)
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`(H)
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`(H)
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`b
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`b’
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`(A)
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`(H)
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`(A)
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`(C)
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`(J)
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`SUBJECT TO CHANGE
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`8
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`Case 1:16-cv-00290-MN Document 1-20 Filed 04/22/16 Page 10 of 10 PageID #: 369
`EXHIBIT T - USPRE41867 - OmniVision Technologies, Inc. OV8858 (PureCel)
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`Claim 11
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` II. (H) the first device-isolation portion and (I) the second device-isolation portion have respective structures selected separately
`so as to be different from each other.
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`(Cross section: b-b’)
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`(H)
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`(H)
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`b
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`b’
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` (I)
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`(H)
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`SUBJECT TO CHANGE
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`9
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