`Case 1:16-cv-00290-MN Document 1-19 Filed 04/22/16 Page 1 of 6 PageID #: 354
`
`
`
`EXHIBIT 8
`
`
`
`
`
`Case 1:16-cv-00290-MN Document 1-19 Filed 04/22/16 Page 2 of 6 PageID #: 355
`EXHIBIT S - USP 7,709,900 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`1. A semiconductor device, comprising:
`(A) an element isolation region formed on a semiconductor substrate;
`(B1) a first active region which comprises the semiconductor substrate surrounded by the element isolation region;
`(C1) a first gate conductor film which is formed across the first active region and the element isolation region, and has (X1) a
`substantially constant dimension in a gate length direction;
`(D) an interlayer insulating film formed on the first gate conductor film; and
`(E1) a first gate contact which passes through the interlayer insulating film, and is connected to the first gate conductor film ,
`wherein
`(E1) the first gate contact has a dimension in the gate length direction larger than (C1) the first gate conductor film,
`(E1) the first gate contact is connected to a part located on (C1) the first gate conductor film and on (A) the element isolation
`region, and
`(E1) the first gate contact is not connected to a part located on (C1) the first gate conductor film and on (B1) the first active
`region.
`
`
`
`
`SUBJECT TO CHANGE
`
`1
`
`
`
`Case 1:16-cv-00290-MN Document 1-19 Filed 04/22/16 Page 3 of 6 PageID #: 356
`EXHIBIT S - USP 7,709,900 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`Claim 1
`
`A semiconductor device, comprising: (A) an element isolation region formed on a semiconductor substrate;
`(B1) a first active region which comprises the semiconductor substrate surrounded by the element isolation region;
`
`
`
`(Cross section : gate length direction )
`
`(Plane : diffusion level)
`
`(B)
`
`(A)
`
`(A)
`
`(B)
`
`(A)
`a semiconductor substrate
`
`SUBJECT TO CHANGE
`
`2
`
`
`
`Case 1:16-cv-00290-MN Document 1-19 Filed 04/22/16 Page 4 of 6 PageID #: 357
`EXHIBIT S - USP 7,709,900 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`Claim 1
`
`(C1) a first gate conductor film which is formed across the first active region and the element isolation region, and has (X1) a
`substantially constant dimension in a gate length direction;
`
`(Plane : gate level)
`
`(C1)
`
`(X1)
`
`a gate length direction
`
`
`
`(A)
`
`(A)
`
`(A) an element
`isolation region
`
`(B1) a first active region
`
`SUBJECT TO CHANGE
`
`3
`
`
`
`Case 1:16-cv-00290-MN Document 1-19 Filed 04/22/16 Page 5 of 6 PageID #: 358
`EXHIBIT S - USP 7,709,900 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`Claim 1
`
`(D) an interlayer insulating film formed on the first gate conductor film; and (E1) a first gate contact which passes through the
`interlayer insulating film, and is connected to the first gate conductor film , wherein (E1) the first gate contact has a dimension in the
`gate length direction larger than (C1) the first gate conductor film,
`
`
`(Plane : gate level)
`
`(Cross section : gate length direction )
`
`(C1) (E1)
`
`(C1)
`
`(D)
`
`a gate length direction
`
`(C1)
`
`(E1)
`
`(B1) a first active region
`
`SUBJECT TO CHANGE
`
`4
`
`
`
`Case 1:16-cv-00290-MN Document 1-19 Filed 04/22/16 Page 6 of 6 PageID #: 359
`EXHIBIT S - USP 7,709,900 - OmniVision Technologies, Inc. OV8858 (PureCel)
`
`Claim 1
`
`(E1) the first gate contact is connected to a part located on (C1) the first gate conductor film and on (A) the element isolation
`region, and (E1) the first gate contact is not connected to a part located on (C1) the first gate conductor film and on (B1) the first
`active region.
`
`
`(Plane : gate level)
`
`(C1)
`
`(E1)
`
`a gate length direction
`
`(B1)
`(A)
`
`(A)
`
`(A)
`
`SUBJECT TO CHANGE
`
`5
`
`
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