Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 1 of 13 PageID #: 20965
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`Exhibit 21
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`Exhibit 21
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`4/8/2016
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 2 of 13 PageID #: 20966
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 50 of 66 PageID #:
` 3355
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`Press Resources > Press Release
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`Samsung Begins Mass Producing World’s Fastest
`DRAM – Based on Newest High Bandwidth Memory
`(HBM) Interface
`
`Korea on January 19, 2016
`
`SHARE
`
`Samsung Electronics announced that it has begun mass producing the industry’s rst
`4-gigabyte (GB) DRAM package based on the second-generation High Bandwidth
`Memory (HBM2) interface, for use in high performance computing (HPC), advanced
`
`graphics and network systems, as well as enterprise servers. Samsung’s new HBMgraphi
`solution will offer unprecedented DRAM performance – more than seven times faster
`than the current DRAM performance limit, allowing faster responsiveness for high-end
`
`computing tasks including parallel computing, graphics rendering and machinegraphi
`learning.
`
`“By mass producing next-generation HBM2 DRAM, we can contribute much more to
`the rapid adoption of next-generation HPC systems by global IT companies,” said
`Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics. “Also, in
`using our 3D memory technology here, we can more proactively cope with the
`multifaceted needs of global IT, while at the same time strengthening the foundation
`for future growth of the DRAM market.”
`
`The newly introduced 4GB HBM2 DRAM, which uses Samsung’s most efficient 20-
`nanometer process technology and advanced HBM chip design, satises the need for
`high performance, energy efficiency, reliability and small dimensions making it well
`
`suited for next-generation HPC systems and graphics cards.graphi
`
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`https://news.samsung.com/global/samsung-begins-mass-producing-worlds-fastest-dram-based-on-newest-high-bandwidth-memory-hbm-interface
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`1/12
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 3 of 13 PageID #: 20967
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 51 of 66 PageID #:
`4/8/2016
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`Following Samsung’s introduction of a 128GB 3D TSV DDR4 registered dual inline
`memory module (RDIMM) last October, the new HBM2 DRAM marks the latest
`milestone in TSV (Through Silicon Via) DRAM technology.
`
`
`
`The 4GB HBM2 package is created by stacking a buffer die at the bottom and four 8-
`gigabit (Gb) core dies on top. These are then vertically interconnected by TSV holes
`and microbumps. A single 8Gb HBM2 die contains over 5,000 TSV holes, which is more
`than 36 times that of a 8Gb TSV DDR4 die, offering a dramatic improvement in data
`transmission performance compared to typical wire-bonding based packages.
`
`Samsung’s new DRAM package features 256GBps of bandwidth, which is double that
`of a HBM1 DRAM package. This is equivalent to a more than seven-fold increase over
`the 36GBps bandwidth of a 4Gb GDDR5 DRAM chip, which has the fastest data speed
`per pin (9Gbps) among currently manufactured DRAM chips. Samsung’s 4GB HBM2
`also enables enhanced power efficiency by doubling the bandwidth per watt over a
`
`https://news.samsung.com/global/samsung-begins-mass-producing-worlds-fastest-dram-based-on-newest-high-bandwidth-memory-hbm-interface
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`2/12
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 4 of 13 PageID #: 20968
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 52 of 66 PageID #:
`4/8/2016
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`4Gb-GDDR5-based solution, and embeds ECC (error-correcting code) functionality to
`offer high reliability.
`
`In addition, Samsung plans to produce an 8GB HBM2 DRAM package within this year.
`
`By specifying 8GB HBM2 DRAM in graphics cards, designers will be able to enjoy agraphi
`space savings of more than 95 percent, compared to using GDDR5 DRAM, offering
`
`more optimal solutions for compact devices that require high-level graphicsgraphi
`computing capabilities.
`
`The company will steadily increase production volume of its HBM2 DRAM over the
`remainder of the year to meet anticipated growth in market demand for network
`systems and servers. Samsung will also expand its line-up of HBM2 DRAM solutions to
`stay ahead in the high-performance computing market and extend its lead in premium
`memory production.
`
`TAGS Chip, DDR4, DRAM, Memory Solutions, TSV
`
`SHARE
`
`File download
`
`Samsung-Begins-Mass-Producing-World’s-Fastest-DRAM-–-Based-on-Newest-High-Bandwidth-M
`emory-HBM-Interface.pdf
`
`PHOTO-4GB-HBM2-DRAM-Structure-Image.jpg
`
`PHOTO-Cross-Sectional-Images-of-HBM2-DRAM1.jpg
`
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`https://news.samsung.com/global/samsung-begins-mass-producing-worlds-fastest-dram-based-on-newest-high-bandwidth-memory-hbm-interface
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`4/8/2016
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 5 of 13 PageID #: 20969
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 53 of 66 PageID #:
` 3358
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 6 of 13 PageID #: 20970
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 54 of 66 PageID #:
` 3359
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 7 of 13 PageID #: 20971
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 55 of 66 PageID #:
` 3360
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 8 of 13 PageID #: 20972
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 56 of 66 PageID #:
` 3361
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 9 of 13 PageID #: 20973
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 57 of 66 PageID #:
` 3362
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 10 of 13 PageID #: 20974
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 58 of 66 PageID #:
`4/8/2016
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 11 of 13 PageID #: 20975
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 59 of 66 PageID #:
`4/8/2016
` 3364
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 12 of 13 PageID #: 20976
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 60 of 66 PageID #:
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`Samsung Begins Mass Producing World’s Fastest DRAM – Based on Newest High Bandwidth Memory (HBM) Interface | Samsung Newsroom
`Case 1:14-cv-01430-LPS Document 308-21 Filed 06/22/20 Page 13 of 13 PageID #: 20977
`Case 1:14-cv-01430-LPS-CJB Document 109-4 Filed 04/20/16 Page 61 of 66 PageID #:
`4/8/2016
` 3366
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