Thus, according to Jastrzebski, Kamins, Applicant, and PO, Payne’s profile generates a (first) “built-in” static unidirectional electric drift field (illustrated by the yellow arrow labelled “E1” below left) that aids the movement of minority carriers from the surface layer to the substrate.6 Ex.1003, ¶¶102-103.
Payne’s Figure 11 shows that the dopant concentration is downward- sloping with increasing depth over the entire well region, and thus, according to PO (and also in light of Applicant’s representations to the Patent Office, discussed in §X.A.1.f), generates a static unidirectional electric drift field that aids the movement of minority carriers downward from the surface layer to the substrate.
Thus, according to §X.A.1.f, including Applicant’s repeated representations to the Patent Office and the Jastrzebski and Kamins cited art relied on by Applicant, such a downward-sloping graded-dopant concentration generates a “built-in” unidirectional electric drift field (illustrated “E1” below) to aid the movement of minority carriers from the surface layer to the substrate.
It was also known to fabricate semiconductor flash memory devices to achieve the benefits of “high density [], small-die size, lower cost, and hot-electron writability of EPROMs, together with the easy erasability, on-board reprogrammability, and electron- tunneling erasure features of EEPROMs,” and to do so using CMOS technology for “lower power-dissipation.” Ex.1008B, 632-634; Ex.1008A, 808-810; Ex.1003, ¶199.
In Petition for Inter Partes Review of U.S. Patent No. 9,190,502 fact, the prosecution history record is clear that the Examiner erroneously considered Hong (Ex.1027)—which is not prior art because it was filed on August 31, 2005, long after the claimed priority date of the ’502 Patent—to be “the closest reference.” Id.