Silicon Nanocrystals Synthesized by Electron-beam Co-evaporation Method and Their Application for Nonvolatile Memory C. Chen, R. Jia, M. Liu, W. Li, C. X. Zhu, H. F. Li, P. W. Zhang, C. Q. Xie, Q. Wang and T. C. Ye (Institute of Microelectronics, Chinese Academy of Sciences)
Halo Implantation Optimization for 65nm Low Power PMOS Device Inverse Narrow Width Effect Improvement H. Ye, J. Ju, X. Shi, B. Liu, J. Ning and I. C. Chen (Semiconductor Manufacturing International Corporation)
Influence of Polymeric Gas on Sidewall Profile and Defect Performance of Aluminum Metal Etch X. Wang, H. Zhang, M. Shen, W. Sun and S. Chang (Semiconductor Manufacturing International Corporation) Ex. 1016, Page 19
The introduction of trench isolation reduced the latch-up concern so that the main application field of epitaxial material then became related to the improvement of the Gate-Oxide-Integrity (GOI) and the DRAM refresh properties (see e.g. [3] and references therein), although cost considerations remained important.
There are a large variety of technological parameters (Si etch depth, degree of recess, epitaxial thickness, layer composition, pre-epitaxial cleaning and bake, growth conditions, anneal technique, junction geometry, use of pre- or post-epi implants, etc) that will have an impact on the final stress level and the associated defect generation [12-17].