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IPR2017-01842, No. 1125 Exhibit - US Patent No 6,806,584 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01842, No. 1126 Exhibit - Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Dielectric Using Radical Oxynitridation for Sub 01 um CMOS, 2000 Symposium on VLSI Tech...
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IPR2017-01842, No. 1127 Exhibit - Mizuno, T et al, Hot Carrier Injection Suppression Due to the Nitride Oxide LDD Spacer Structure, IEEE Trans Electron Dev, Vol 38, No 3, March, 1991 Mizuno ...
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IPR2017-01842, No. 1127 Exhibit - Mizuno, T et al, Hot Carrier Injection Suppression Due to the Nitride Oxide LDD Spacer Structure, IEEE Trans Electron Dev, Vol 38, No 3, March, 1991 Mizuno (P.T.A.B.
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IPR2017-01842, No. 1116 Exhibit - J Moon et al, A New LDD Structure Total Overlap with Polysilicon Spacer TOPS, IEEE Electron Device Letters, Vol 11, No 5, at 221 223 May 1990 (P.T.A.B. Ju...
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IPR2017-01842, No. 1116 Exhibit - J Moon et al, A New LDD Structure Total Overlap with Polysilicon Spacer TOPS, IEEE Electron Device Letters, Vol 11, No 5, at 221 223 May 1990 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1324 Exhibit - US Patent No 6,383,906 to Wieczorek et al Wieczorek (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1321 Exhibit - US Patent No 6,806,584 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1310 Exhibit - K Maex et al, Simply irresistible silicides, Physics World, at 35 39 Nov 1995 (P.T.A.B. Jul. 26, 2017)
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