- All Courts
- Federal Courts
- Bankruptcies
- PTAB
- ITC
Filters
Like full text docket searches?
Get docket alerts, perform legal research, get updates of major decisions and orders, use our advanced analytics, and more. Request a Demo or create your account.
Date Filed
Dollars
Find cases based on dollar amount with searches like:
$100k-$10M.
Read the details here.
Displaying 414-428 of
516 results
1125 Exhibit: US Patent No 6,806,584
Document
IPR2017-01842, No. 1125 Exhibit - US Patent No 6,806,584 (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1126 Exhibit: Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Diel...
Document
IPR2017-01842, No. 1126 Exhibit - Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Dielectric Using Radical Oxynitridation for Sub 01 um CMOS, 2000 Symposium on VLSI Tech...
|
|
Cite Document
1127 Exhibit: Mizuno, T et al, Hot Carrier Injection Suppression Due to the Nitride O...
Document
IPR2017-01842, No. 1127 Exhibit - Mizuno, T et al, Hot Carrier Injection Suppression Due to the Nitride Oxide LDD Spacer Structure, IEEE Trans Electron Dev, Vol 38, No 3, March, 1991 Mizuno ...
|
|
Cite Document
1116 Exhibit: J Moon et al, A New LDD Structure Total Overlap with Polysilicon Spa...
Document
IPR2017-01842, No. 1116 Exhibit - J Moon et al, A New LDD Structure Total Overlap with Polysilicon Spacer TOPS, IEEE Electron Device Letters, Vol 11, No 5, at 221 223 May 1990 (P.T.A.B. Ju...
|
|
Cite Document
1110 Exhibit: J Rabaey et al, Digital Integrated Circuits, at 40 44 2d ed 2003
Document
IPR2017-01842, No. 1110 Exhibit - J Rabaey et al, Digital Integrated Circuits, at 40 44 2d ed 2003 (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1119 Exhibit: M Green et al, Ultrathin 4 nm SiO2 and Si O N gate dielectric layers fo...
Document
IPR2017-01842, No. 1119 Exhibit - M Green et al, Ultrathin 4 nm SiO2 and Si O N gate dielectric layers for silicon microelectronics Understanding the processing, structure, and physical and elec...
|
|
Cite Document
1304 Exhibit: US Patent No 5,960,270 to Misra et al Misra
Document
IPR2017-01844, No. 1304 Exhibit - US Patent No 5,960,270 to Misra et al Misra (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1324 Exhibit: US Patent No 6,383,906 to Wieczorek et al Wieczorek
Document
IPR2017-01844, No. 1324 Exhibit - US Patent No 6,383,906 to Wieczorek et al Wieczorek (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1331 Exhibit: Notice of Allowance dated October 15, 2010
Document
IPR2017-01844, No. 1331 Exhibit - Notice of Allowance dated October 15, 2010 (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1321 Exhibit: US Patent No 6,806,584
Document
IPR2017-01844, No. 1321 Exhibit - US Patent No 6,806,584 (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1310 Exhibit: K Maex et al, Simply irresistible silicides, Physics World, at 35 39 Nov...
Document
IPR2017-01844, No. 1310 Exhibit - K Maex et al, Simply irresistible silicides, Physics World, at 35 39 Nov 1995 (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1318 Exhibit: US Patent No 6,509,234
Document
IPR2017-01844, No. 1318 Exhibit - US Patent No 6,509,234 (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
2303 Exhibit: US Patent No 6,870,230 Matsuda
Document
IPR2017-01844, No. 2303 Exhibit - US Patent No 6,870,230 Matsuda (P.T.A.B. Nov. 8, 2017)
|
|
Cite Document
1313 Exhibit: US Patent No 4,951,100 Parrillo
Document
IPR2017-01844, No. 1313 Exhibit - US Patent No 4,951,100 Parrillo (P.T.A.B. Jul. 26, 2017)
|
|
Cite Document
1325 Exhibit: KB Sundaram et al, Fabrication of Metal Field Effect Transistors Using...
Document
IPR2017-01844, No. 1325 Exhibit - KB Sundaram et al, Fabrication of Metal Field Effect Transistors Using Silicon Nitride and Silicon Oxynitride as Gate Insulators, Electrochemical Proceedings, ...
|
|
Cite Document
