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Displaying 279-293 of 516 results

1324 Exhibit: US Patent No 6,383,906 to Wieczorek et al Wieczorek

Document IPR2017-01844, No. 1324-23 Exhibit - US Patent No 6,383,906 to Wieczorek et al Wieczorek (P.T.A.B. Jul. 26, 2017)

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1330 Exhibit: Interaction of Transition Metals with Silicon 100 The Ni Si, Co Si and A...

Document IPR2017-01844, No. 1330-29 Exhibit - Interaction of Transition Metals with Silicon 100 The Ni Si, Co Si and AuSi100 Systems, by Steven Naftel, Graduate Program in Chemistry, The University of...

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1320 Exhibit: US Patent No 6,512,266

Document IPR2017-01844, No. 1320-19 Exhibit - US Patent No 6,512,266 (P.T.A.B. Jul. 26, 2017)

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1307 Exhibit: US Patent Publication No 20020145156 to Igarashi et al Igarashi

Document IPR2017-01844, No. 1307-6 Exhibit - US Patent Publication No 20020145156 to Igarashi et al Igarashi (P.T.A.B. Jul. 26, 2017)

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1306 Exhibit: US Patent Publication No 20020000611 to Hokazono et al Hokazono

Document IPR2017-01844, No. 1306-5 Exhibit - US Patent Publication No 20020000611 to Hokazono et al Hokazono (P.T.A.B. Jul. 26, 2017)

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1333 Exhibit: M Green et al, Ultrathin 4 nm SiO2 and Si O N gate dielectric layers fo...

Document IPR2017-01844, No. 1333-32 Exhibit - M Green et al, Ultrathin 4 nm SiO2 and Si O N gate dielectric layers for silicon microelectronics Understanding the processing, structure, and physical and e...

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1334 Exhibit: December 19, 2017 Conference Call Transcript

Document IPR2017-01844, No. 1334-40 Exhibit - December 19, 2017 Conference Call Transcript (P.T.A.B. Jan. 9, 2018)

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1303 Exhibit: Applicants Amendment and Response dated August 6, 2010

Document IPR2017-01844, No. 1303-2 Exhibit - Applicants Amendment and Response dated August 6, 2010 (P.T.A.B. Jul. 26, 2017)

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1314 Exhibit: US Patent No 6,110,827 to Chien et al Chien

Document IPR2017-01844, No. 1314-13 Exhibit - US Patent No 6,110,827 to Chien et al Chien (P.T.A.B. Jul. 26, 2017)

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1316 Exhibit: Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Diel...

Document IPR2017-01844, No. 1316-15 Exhibit - Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Dielectric Using Radical Oxynitridation for Sub 01 um CMOS, 2000 Symposium on VLSI Te...

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1313 Exhibit: US Patent No 4,951,100 Parrillo

Document IPR2017-01844, No. 1313-12 Exhibit - US Patent No 4,951,100 Parrillo (P.T.A.B. Jul. 26, 2017)

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1312 Exhibit: US Patent Application No 20030011043 Roberts

Document IPR2017-01844, No. 1312-11 Exhibit - US Patent Application No 20030011043 Roberts (P.T.A.B. Jul. 26, 2017)

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1309 Exhibit: J Plummer et al, Silicon VLSI Technology Fundamentals, Practice, an...

Document IPR2017-01844, No. 1309-8 Exhibit - J Plummer et al, Silicon VLSI Technology Fundamentals, Practice, and Modeling, 1st ed 2000 (P.T.A.B. Jul. 26, 2017)

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1308 Exhibit: US Patent No 6,072,237 to Jang et al Jang

Document IPR2017-01844, No. 1308-7 Exhibit - US Patent No 6,072,237 to Jang et al Jang (P.T.A.B. Jul. 26, 2017)

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1331 Exhibit: Notice of Allowance dated October 15, 2010

Document IPR2017-01844, No. 1331-30 Exhibit - Notice of Allowance dated October 15, 2010 (P.T.A.B. Jul. 26, 2017)

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