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IPR2017-01844, No. 1305-4 Exhibit - US Patent No 5,472,890 to Oda Oda (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1305-4 Exhibit - US Patent No 5,472,890 to Oda Oda (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1326-25 Exhibit - Kastenmeier et al, Remote plasma etching of silicon nitride and silicon dioxide using NF3O2 gas mixtures, J Vac Sci Technol A 164, JulAug 1998 Kastenme...
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IPR2017-01844, No. 1326-25 Exhibit - Kastenmeier et al, Remote plasma etching of silicon nitride and silicon dioxide using NF3O2 gas mixtures, J Vac Sci Technol A 164, JulAug 1998 Kastenmeier (P.T.A.B
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IPR2017-01844, No. 1323-22 Exhibit - D Baglee et al, Reduced Hot Electron Effects in MOSFETs with an Optimized LDD Structure, IEEE Electron Device Letters, Vol EDL 5, No 10, at 389 391 Oc...
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IPR2017-01844, No. 1323-22 Exhibit - D Baglee et al, Reduced Hot Electron Effects in MOSFETs with an Optimized LDD Structure, IEEE Electron Device Letters, Vol EDL 5, No 10, at 389 391 Oct 1984 (P.T.A
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IPR2017-01844, No. 1304-3 Exhibit - US Patent No 5,960,270 to Misra et al Misra (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1322-21 Exhibit - J Moon et al, A New LDD Structure Total Overlap with Polysilicon Spacer TOPS, IEEE Electron Device Letters, Vol 11, No 5, at 221 223 May 1990 (P.T.A.B....
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IPR2017-01844, No. 1322-21 Exhibit - J Moon et al, A New LDD Structure Total Overlap with Polysilicon Spacer TOPS, IEEE Electron Device Letters, Vol 11, No 5, at 221 223 May 1990 (P.T.A.B. Jul. 26, 20
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IPR2017-01844, No. 1302-33 Exhibit - Shanfield Declaration (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1321-20 Exhibit - US Patent No 6,806,584 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1321-20 Exhibit - US Patent No 6,806,584 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1310-9 Exhibit - K Maex et al, Simply irresistible silicides, Physics World, at 35 39 Nov 1995 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1310-9 Exhibit - K Maex et al, Simply irresistible silicides, Physics World, at 35 39 Nov 1995 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1329-28 Exhibit - US Patent No 5,286,344 to Blalock et al Blalock (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1329-28 Exhibit - US Patent No 5,286,344 to Blalock et al Blalock (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1318-17 Exhibit - US Patent No 6,509,234 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1318-17 Exhibit - US Patent No 6,509,234 (P.T.A.B. Jul. 26, 2017)
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IPR2017-01843, No. 1223-22 Exhibit - Interaction of Transition Metals with Silicon 100 The Ni Si, Co Si and AuSi100 Systems, by Steven Naftel, Graduate Program in Chemistry, The University of...
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IPR2017-01843, No. 1223-22 Exhibit - Interaction of Transition Metals with Silicon 100 The Ni Si, Co Si and AuSi100 Systems, by Steven Naftel, Graduate Program in Chemistry, The University of Western
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IPR2017-01844, No. 2303-36 Exhibit - US Patent No 6,870,230 Matsuda (P.T.A.B. Nov. 8, 2017)
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IPR2017-01844, No. 2303-36 Exhibit - US Patent No 6,870,230 Matsuda (P.T.A.B. Nov. 8, 2017)
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IPR2017-01844, No. 2306-39 Exhibit - McGraw Hill Dictionary of Scientific and Technical Terms 2003 (P.T.A.B. Nov. 8, 2017)
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IPR2017-01844, No. 2305-38 Exhibit - US Patent No 3,390,022 (P.T.A.B. Nov. 8, 2017)
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IPR2017-01844, No. 2305-38 Exhibit - US Patent No 3,390,022 (P.T.A.B. Nov. 8, 2017)
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IPR2017-01844, No. 1332-31 Exhibit - US Patent No 6,326,301 to Venkatesan et al Venkatesan (P.T.A.B. Jul. 26, 2017)
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IPR2017-01844, No. 1332-31 Exhibit - US Patent No 6,326,301 to Venkatesan et al Venkatesan (P.T.A.B. Jul. 26, 2017)
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