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Displaying 249-263 of 516 results

1206 Exhibit: US Patent No 6,110,827 to Chien et al Chien

Document IPR2017-01843, No. 1206-5 Exhibit - US Patent No 6,110,827 to Chien et al Chien (P.T.A.B. Jul. 26, 2017)

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1126 Exhibit: Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Diel...

Document IPR2017-01842, No. 1126-25 Exhibit - Togo, M et al Low Leakage and High Reliability 15 nm SiON Gate Dielectric Using Radical Oxynitridation for Sub 01 um CMOS, 2000 Symposium on VLSI Te...

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1219 Exhibit: US Patent No 5,726,479

Document IPR2017-01843, No. 1219-18 Exhibit - US Patent No 5,726,479 (P.T.A.B. Jul. 26, 2017)

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1122 Exhibit: US Patent No 6,509,234

Document IPR2017-01842, No. 1122-21 Exhibit - US Patent No 6,509,234 (P.T.A.B. Jul. 26, 2017)

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1225 Exhibit: WO Publication No 2002043151 with certified English translation Shim...

Document IPR2017-01843, No. 1225-24 Exhibit - WO Publication No 2002043151 with certified English translation Shimizu (P.T.A.B. Jul. 26, 2017)

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1119 Exhibit: M Green et al, Ultrathin 4 nm SiO2 and Si O N gate dielectric layers fo...

Document IPR2017-01842, No. 1119-18 Exhibit - M Green et al, Ultrathin 4 nm SiO2 and Si O N gate dielectric layers for silicon microelectronics Understanding the processing, structure, and physical and e...

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1203 Exhibit: Applicants Amendment and Response dated August 6, 2010

Document IPR2017-01843, No. 1203-2 Exhibit - Applicants Amendment and Response dated August 6, 2010 (P.T.A.B. Jul. 26, 2017)

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1123 Exhibit: US Patent No 5,726,479

Document IPR2017-01842, No. 1123-22 Exhibit - US Patent No 5,726,479 (P.T.A.B. Jul. 26, 2017)

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2302 Exhibit: US Patent No 6,437,404 Xiang

Document IPR2017-01844, No. 2302-35 Exhibit - US Patent No 6,437,404 Xiang (P.T.A.B. Nov. 8, 2017)

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2301 Exhibit: Request for Continued Examination dated March 29, 2010

Document IPR2017-01844, No. 2301-34 Exhibit - Request for Continued Examination dated March 29, 2010 (P.T.A.B. Nov. 8, 2017)

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1327 Exhibit: High k dielectrics Current status and Materials Properties Considerat...

Document IPR2017-01844, No. 1327-26 Exhibit - High k dielectrics Current status and Materials Properties Considerations, Wilk, GD, et al, J App Phy Vol 89, No 10, May 15, 2001 (P.T.A.B. Jul. 26, 2017)

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1311 Exhibit: J Rabaey et al, Digital Integrated Circuits, at 40 44 2d ed 2003 Rabae...

Document IPR2017-01844, No. 1311-10 Exhibit - J Rabaey et al, Digital Integrated Circuits, at 40 44 2d ed 2003 Rabaey (P.T.A.B. Jul. 26, 2017)

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1315 Exhibit: US Patent No 6,444,566 to Tsai et al Tsai

Document IPR2017-01844, No. 1315-14 Exhibit - US Patent No 6,444,566 to Tsai et al Tsai (P.T.A.B. Jul. 26, 2017)

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1328 Exhibit: WO Publication No 2002043151 with certified English translation Shim...

Document IPR2017-01844, No. 1328-27 Exhibit - WO Publication No 2002043151 with certified English translation Shimizu (P.T.A.B. Jul. 26, 2017)

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2304 Exhibit: Office Action dated March 29, 2010

Document IPR2017-01844, No. 2304-37 Exhibit - Office Action dated March 29, 2010 (P.T.A.B. Nov. 8, 2017)

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