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DOPING OF IIB-VIA SEMICONDUCTORS DURING MOLECULAR BEAM EPITAXY USING NEUTRAL FREE RADICALS

07/573,428 | U.S. Patent Application

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Location FILE REPOSITORY (FRANCONIA)
Filed Aug. 24, 1990
Examiner BYRON S EVERHART
Class 999
Art Group 1104
Patent No. 5,248,631
Case Type Utility - 999/105000
Status Patented Case
Child 08/95,872 Patented
Last Updated: 5 years, 1 month ago
Date # Transaction