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Inventors

KATSUHIDE MANABE HISAKI KATO ISAMU AKASAKI KAZUMASA HIRAMATSU HIROSHI AMANO

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TOYODA GOSEI CO., LTD.NAGOYA UNIVERSITY RESEARCH DEVELOPMENT CORPORATION OF JAPAN

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SUBSTRATE FOR GROWING GALLIUM NITRIDE COMPOUND-SEMICONDUCTOR DEVICE AND LIGHT EMITTING DIODE

07/484,213 | U.S. Patent Application

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Location FILE REPOSITORY (FRANCONIA)

Filed Feb. 26, 1990

Examiner SARA W CRANE

Class 999

Art Group 2503

Patent No. 5,122,845

Case Type Utility - 999/017000

Status Patented Case

Child 50458/1989

Last Updated: 5 years, 1 month ago

Date	#	Transaction
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SUBSTRATE FOR GROWING GALLIUM NITRIDE COMPOUND-SEMICONDUCTOR DEVICE AND LIGHT EMITTING DIODE

07/484,213 | U.S. Patent Application

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