Application No. 17/870,268
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`Docket No. SKYW00056-1C US
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`AMENDMENTSTO THE CLAIMS
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`This listing of claims will replace all prior versions andlistings of claims in the
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`application:
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`1-20. (Canceled)
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`21. (Currently amended) A solar cell comprising:
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`a silicon substrate having a textured front surface and a back surface opposite the front
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`surface, the front surface facing the sun to collect solar radiation during normal operation;
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`an antireflective layer over the textured front surface ofthe silicon substrate;
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`a doped diffusion region in the silicon substrate, the doped diffusion region proximate to
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`the textured front surface of the silicon substrate, wherein the antireflective layer is formed over
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`at least_a portion of the doped diffusion region;
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`a tunnel oxide layer formed on the back surface ofthe silicon substrate, the tunnel oxide
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`layer having a thickness of about 10 to 50 Angstroms;
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`a doped polysilicon em#ter region layer formed on the tunnel oxide layer, the doped
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`polysilicon em#ter region layer and the doped diffusion region having opposite conductivity
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`types;
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`a front metal contact disposed on andin electrical contact with a portion of the doped
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`diffusion regionthe-frent-surface-ofthe-sticen-substrate; and
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`a rear metal contact disposed on and in contact with the doped polysilicon emitter region
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`layer.
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`22. (Previously presented)
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`The solar cell of claim 21, wherein the antireflective layer
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`comprises silicon nitride.
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`23. (Previously presented)
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`The solarcell of claim 21 comprising an oxide layer formed on the
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`textured front surface of the silicon substrate.
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`24. (Previously presented)
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`The solarcell of claim 23, wherein the oxide layer comprises
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`silicon dioxide.
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`Application No. 17/870,268
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`Docket No. SKYW00056-1C US
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`25. (Previously presented)
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`The solar cell of claim 24, wherein the silicon dioxide is thermally
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`grownto a thickness of about 10 to 250 Angstroms.
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`26. (Previously presented)
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`The solarcell of claim 21, wherein the tunnel oxide layer
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`comprises silicon dioxide.
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`27. (Previously presented)
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`The solarcell of claim 26, wherein the tunnel oxide layeris
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`thermally grown.
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`28. (Currently amended)
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`The solar cell of claim 21 comprising a dielectric layer formed on
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`the doped polysilicon emitter region layer.
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`29. (Currently amended)
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`Thesolar cell of claim 28 wherein the dielectric layer comprises
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`contact holes through which rear metal contact makes an electrical connection with the doped
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`polysilicon em#ter region layer.
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`30. (Previously presented)
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`Thesolar cell of claim 21, wherein rear metal contact comprises
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`silver.
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`31-33. (Canceled)
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`34. (Previously presented)
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`Thesolar cell of claim 21, wherein the silicon substrate is a N-type
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`silicon substrate.
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`35. (New)
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`The solar cell of claim 21, comprising a trench formed on the back surface of the
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`solar cell, wherein the trench is formed through the doped polysilicon region layer and the tunnel
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`oxide layer.
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`36. (New)
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`Thesolar cell of claim 35, wherein the trench is formed through a portion of the
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`silicon substrate.
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`Application No. 17/870,268
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`Docket No. SKYW00056-1C US
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`37. (New)
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`The solar cell of claim 35, wherein the trench separates portions of the doped
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`polysilicon emitter region on the back surface of the solar cell.
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`38. (New)
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`Thesolar cell of claim 35, wherein the trench is formed near an edge of the
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`silicon substrate on the back surface.
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`39. (New)
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`The solar cell of claim 21, wherein:
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`the doped diffusion region in the silicon substrate includesa first doped diffusion
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`region and a second doped diffusion region,
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`the first doped diffusion region is located under and in contact with the front
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`metal contact, and
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`the first doped diffusion region has a lower sheet resistance than the second doped
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`diffusion region.
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`40. (New)
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`Thesolar cell of claim 39, wherein the first doped diffusion region is formed from
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`a different dopant source than the second dopeddiffusion region.
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`41. (New)
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`The solar cell of claim 39, wherein the front metal contact is narrower than the
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`first doped diffusion region.
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`42. (New)
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`The solar cell of claim 41, wherein the antireflective layer is formed over the
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`second dopeddiffusion region and a portion ofthe first doped diffusion region, whereby the
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`antireflective layer has contact holes through which the front metal contact contacts the first
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`doped diffusion region.
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`43. (New)
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`Thesolar cell of claim 39, wherein the first doped diffusion region has a circular
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`shape from a plan view ofthe front surface.
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