Attorney Docket No. SKYW00056-1C US
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`CLAIMS
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`Whatis claimed is:
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`1.
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`A solar cell, comprising:
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`a substrate;
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`a first tunnel dielectric disposed over the substrate;
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`an emitter disposed over the first tunnel dielectric;
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`a front electrode disposed overa front surface of the substrate; and
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`a back electrode disposed over a back surface of the substrate.
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`The solar cell of claim 1, wherein the emitter is a polysilicon emitter.
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`The solar cell of claim 1, wherein the substrate is a monocrystalline silicon
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`10
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`2.
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`3.
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`substrate.
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`15
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`4.
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`The solar cell of claim 1, wherein the first tunnel dielectric is a tunnel oxide.
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`5.
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`The solar cell of claim 1, wherein the emitter is disposed over the back surface of
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`the substrate.
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`20
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`6.
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`The solar cell of claim 1, further comprising a second tunnel dielectric disposed
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`on an opposite side of the substrate than the first tunnel dielectric.
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`7.
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`8.
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`The solar cell of claim 1, wherein the back electrode includessilver.
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`The solar cell of claim 1, further comprising an antireflective layer disposed over
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`the front surface of the substrate.
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`9.
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`A solar cell, comprising:
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`a substrate;
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`an emitter over a back surface of the substrate:
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`Attorney Docket No. SKYW00056-1C US
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`a first dielectric between the emitter and back surface;
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`a front electrode disposed on a front surface of the solar cell; and
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`a back electrode disposed on a back surface of the solar cell.
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`10.|The solar cell of claim 9, wherein the emitter is a polysilicon emitter.
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`11.
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`The solar cell of claim 9, wherein the substrate is a monocrystalline silicon
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`substrate.
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`10
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`12.
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`The solar cell of claim 9, wherein thefirst dielectric is an oxide.
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`13.|The solar cell of claim 9, further comprising a second dielectric disposed on an
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`opposite side of the substrate than the first dielectric.
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`15
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`14.
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`The solar cell of claim 9, wherein the back electrode includessilver.
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`15.|Amethod of fabricating a solar cell, the method comprising:
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`forming a first tunnel dielectric on a front surface of a substrate;
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`forming a second tunnel dielectric on a back surface of the substrate;
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`forming an emitter overthe first or second tunnel dielectric;
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`forming a front side electrode on a front surface of the solar cell; and
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`forming a back side electrode on a back surfaceof the solar cell.
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`16.|The method of claim 15, wherein said forming the emitter comprises forming a
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`polysilicon emitter.
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`17.|The method of claim 15, wherein said forming the emitter comprises forming a
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`first silicon layer on the second tunnel dielectric.
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`30
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`18.
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`|The method of claim 17, further comprising forming a second silicon layer on the
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`first tunnel dielectric.
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`Attorney Docket No. SKYW00056-1C US
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`19.
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`|The method of claim 18, wherein forming the first and second silicon layers
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`comprises forming first and second polysilicon layers, respectively.
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`20.
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`The method of claim 15, wherein said forming the second tunnel dielectric
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`comprises forming an oxide.
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