Application No. 17/870,268
`
`Docket No. SKYW00056-1C US
`
`AMENDMENTSTO THE CLAIMS
`
`This listing of claims will replace all prior versions andlistings of claims in the
`
`application:
`
`1-20. (Canceled)
`
`21. (Currently amended) A solar cell comprising:
`
`a silicon substrate having a textured front surface and a back surface opposite the front
`
`surface, the front surface facing the sun to collect solar radiation during normal operation;
`
`an antireflective layer over the textured front surface ofthe silicon substrate;
`
`a doped diffusion region in the silicon substrate, the doped diffusion region proximate to
`
`the textured front surface of the silicon substrate, wherein the antireflective layer is formed over
`
`at least_a portion of the doped diffusion region;
`
`a tunnel oxide layer formed on the back surface ofthe silicon substrate, the tunnel oxide
`
`layer having a thickness of about 10 to 50 Angstroms;
`
`a doped polysilicon em#ter region layer formed on the tunnel oxide layer, the doped
`
`polysilicon em#ter region layer and the doped diffusion region having opposite conductivity
`
`types;
`
`a front metal contact disposed on andin electrical contact with a portion of the doped
`
`diffusion regionthe-frent-surface-ofthe-sticen-substrate; and
`
`a rear metal contact disposed on and in contact with the doped polysilicon emitter region
`
`layer.
`
`22. (Previously presented)
`
`The solar cell of claim 21, wherein the antireflective layer
`
`comprises silicon nitride.
`
`23. (Previously presented)
`
`The solarcell of claim 21 comprising an oxide layer formed on the
`
`textured front surface of the silicon substrate.
`
`24. (Previously presented)
`
`The solarcell of claim 23, wherein the oxide layer comprises
`
`silicon dioxide.
`
`
`
`Docket No. SKYW00056-1C US
`
`AMENDMENTSTO THE CLAIMS
`
`This listing of claims will replace all prior versions andlistings of claims in the
`
`application:
`
`1-20. (Canceled)
`
`21. (Currently amended) A solar cell comprising:
`
`a silicon substrate having a textured front surface and a back surface opposite the front
`
`surface, the front surface facing the sun to collect solar radiation during normal operation;
`
`an antireflective layer over the textured front surface ofthe silicon substrate;
`
`a doped diffusion region in the silicon substrate, the doped diffusion region proximate to
`
`the textured front surface of the silicon substrate, wherein the antireflective layer is formed over
`
`at least_a portion of the doped diffusion region;
`
`a tunnel oxide layer formed on the back surface ofthe silicon substrate, the tunnel oxide
`
`layer having a thickness of about 10 to 50 Angstroms;
`
`a doped polysilicon em#ter region layer formed on the tunnel oxide layer, the doped
`
`polysilicon em#ter region layer and the doped diffusion region having opposite conductivity
`
`types;
`
`a front metal contact disposed on andin electrical contact with a portion of the doped
`
`diffusion regionthe-frent-surface-ofthe-sticen-substrate; and
`
`a rear metal contact disposed on and in contact with the doped polysilicon emitter region
`
`layer.
`
`22. (Previously presented)
`
`The solar cell of claim 21, wherein the antireflective layer
`
`comprises silicon nitride.
`
`23. (Previously presented)
`
`The solarcell of claim 21 comprising an oxide layer formed on the
`
`textured front surface of the silicon substrate.
`
`24. (Previously presented)
`
`The solarcell of claim 23, wherein the oxide layer comprises
`
`silicon dioxide.
`
`
`
`Application No. 17/870,268
`
`Docket No. SKYW00056-1C US
`
`25. (Previously presented)
`
`The solar cell of claim 24, wherein the silicon dioxide is thermally
`
`grownto a thickness of about 10 to 250 Angstroms.
`
`26. (Previously presented)
`
`The solarcell of claim 21, wherein the tunnel oxide layer
`
`comprises silicon dioxide.
`
`27. (Previously presented)
`
`The solarcell of claim 26, wherein the tunnel oxide layeris
`
`thermally grown.
`
`28. (Currently amended)
`
`The solar cell of claim 21 comprising a dielectric layer formed on
`
`the doped polysilicon emitter region layer.
`
`29. (Currently amended)
`
`Thesolar cell of claim 28 wherein the dielectric layer comprises
`
`contact holes through which rear metal contact makes an electrical connection with the doped
`
`polysilicon em#ter region layer.
`
`30. (Previously presented)
`
`Thesolar cell of claim 21, wherein rear metal contact comprises
`
`silver.
`
`31-33. (Canceled)
`
`34. (Previously presented)
`
`Thesolar cell of claim 21, wherein the silicon substrate is a N-type
`
`silicon substrate.
`
`35. (New)
`
`The solar cell of claim 21, comprising a trench formed on the back surface of the
`
`solar cell, wherein the trench is formed through the doped polysilicon region layer and the tunnel
`
`oxide layer.
`
`36. (New)
`
`Thesolar cell of claim 35, wherein the trench is formed through a portion of the
`
`silicon substrate.
`
`
`
`Application No. 17/870,268
`
`Docket No. SKYW00056-1C US
`
`37. (New)
`
`The solar cell of claim 35, wherein the trench separates portions of the doped
`
`polysilicon emitter region on the back surface of the solar cell.
`
`38. (New)
`
`Thesolar cell of claim 35, wherein the trench is formed near an edge of the
`
`silicon substrate on the back surface.
`
`39. (New)
`
`The solar cell of claim 21, wherein:
`
`the doped diffusion region in the silicon substrate includesa first doped diffusion
`
`region and a second doped diffusion region,
`
`the first doped diffusion region is located under and in contact with the front
`
`metal contact, and
`
`the first doped diffusion region has a lower sheet resistance than the second doped
`
`diffusion region.
`
`40. (New)
`
`Thesolar cell of claim 39, wherein the first doped diffusion region is formed from
`
`a different dopant source than the second dopeddiffusion region.
`
`41. (New)
`
`The solar cell of claim 39, wherein the front metal contact is narrower than the
`
`first doped diffusion region.
`
`42. (New)
`
`The solar cell of claim 41, wherein the antireflective layer is formed over the
`
`second dopeddiffusion region and a portion ofthe first doped diffusion region, whereby the
`
`antireflective layer has contact holes through which the front metal contact contacts the first
`
`doped diffusion region.
`
`43. (New)
`
`Thesolar cell of claim 39, wherein the first doped diffusion region has a circular
`
`shape from a plan view ofthe front surface.
`
`
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