`Client Ref: S0123US4
`
`AMENDMENTSTO THE CLAIMS
`
`This listing of claims will replace all prior versions andlistings of claims in the
`
`application:
`
`21. (New) A solar cell comprising:
`
`a silicon substrate having a textured front surface and a back surface opposite the front
`
`surface, the front surface facing the sun to collect solar radiation during normal operation;
`
`an antireflective layer over the textured front surface ofthe silicon substrate;
`
`a doped diffusion region in the silicon substrate, the doped diffusion region proximate
`
`to the textured front surface of the silicon substrate;
`
`a tunnel oxide layer formed on the back surface ofthe silicon substrate, the tunnel
`
`oxide layer having a thickness of about 10 to 50 Angstroms;
`
`a doped polysilicon emitter layer formed on the tunnel oxide layer, the doped
`
`polysilicon emitter layer and the doped diffusion region having opposite conductivity types;
`
`a front metal contact disposed on and in contact with the front surface of the silicon
`
`substrate; and
`
`a rear metal contact disposed on and in contact with the doped polysilicon emitter
`
`layer.
`
`1-20. (Canceled)
`
` Application No. 17/870,268
`
`22. (New)
`
`Thesolar cell of claim 21, wherein the antireflective layer comprisessilicon
`
`nitride.
`
`23. (New)
`
`Thesolar cell of claim 21 comprising an oxide layer formed on the textured
`
`front surface of the silicon substrate.
`
`24. (New)
`
`The solar cell of claim 23, wherein the oxide layer comprises silicon dioxide.
`
`25. (New)
`
`Thesolar cell of claim 24, wherein the silicon dioxide is thermally grown to a
`
`thickness of about 10 to 250 Angstroms.
`
`26. (New)
`
`Thesolar cell of claim 21, wherein the tunnel oxide layer comprises silicon
`
`dioxide.
`
`27. (New)
`
`Thesolar cell of claim 26, wherein the tunnel oxide layer is thermally grown.
`
`-2-
`
`
`
`Docket No: SKYW00056-1C US
`Client Ref: S0123US4
`
`28. (New)
`
`The solar cell of claim 21 comprising a dielectric layer formed on the doped
`
`29. (New)
`
`Thesolar cell of claim 28 wherein the dielectric layer comprises contact holes
`
`through which rear metal contact makes an electrical connection with the doped polysilicon
`
`emitter layer.
`
`polysilicon emitter layer.
`
` Application No. 17/870,268
`
`30. (New)
`
`Thesolar cell of claim 21, wherein rear metal contact comprises silver.
`
`31. (New)
`
`Thesolar cell of claim 21 comprising a front bus bar attached to a front side of
`
`the solar cell, the front bus bar in electrical contact with the front metal contact.
`
`32. (New)
`
`The solar cell of claim 21 comprising a rear bus bar attached toa rear side of
`
`the solar cell, the rear bus barin electrical contact with the rear metal contact.
`
`33. (New)
`
`Thesolar cell of claim 21, wherein the silicon substrate has a thickness
`
`measured from the back surface to a tip of the textured front surface of about 100 to 250 um.
`
`34. (New)
`
`Thesolar cell of claim 21, wherein the silicon substrate is a N-type silicon
`
`substrate.
`
`-3-
`
`
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